型号 | Most Relevant | Technical | Compliance | Operating Conditions | Physical | Other | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
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数据手册 |
单价/库存
|
风险等级 |
是否无铅
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是否Rohs认证
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生命周期
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最大输出电流
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最大正向电压 (VF) |
最大反向恢复时间
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最大二极管电容 | 最大工作频率 |
最大反向电流
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最大功率耗散
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二极管元件材料 | 最小击穿电压 | 二极管类型 | 配置 |
表面贴装
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最大重复峰值反向电压
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元件数量 | 技术 | 其他特性 | 应用 | 频带 | 最大非重复峰值正向电流 | 相数 |
脉冲输入最大功率
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反向测试电压
|
最小正切信号灵敏度
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肖特基势垒类型
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认证状态
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JESD-30 代码 | JESD-609代码 |
参考标准
|
JEDEC-95代码 | 湿度敏感等级 |
最高工作温度
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最低工作温度
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峰值回流温度(摄氏度)
|
处于峰值回流温度下的最长时间
|
外壳连接 | 端子数量 |
封装主体材料
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封装形状
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封装形式
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端子面层
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端子形式
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端子位置
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mfrid
|
包装说明
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针数
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制造商包装代码
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是否符合REACH标准
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ECCN代码
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HTS代码
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Date Of Intro
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YTEOL
|
Source Content uid
|
零件包装代码
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Country Of Origin
|
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MA4E2054B1-287T
MACOM
|
查询价格和库存 |
|
Yes | Yes | Active | 0.3 pF | SILICON | MIXER DIODE | SERIES CONNECTED, CENTER TAP, 2 ELEMENTS | YES | 2 | SCHOTTKY | LOW NOISE | 75 mW | LOW BARRIER | Not Qualified | R-PDSO-G3 | e3 | 3 | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | MATTE TIN | GULL WING | DUAL | 2149 | R-PDSO-G3 | 3 | CASE 287 | compliant | EAR99 | 8541.10.00.60 | 1998-01-01 | 4 | |||||||||||||||||||||||||||
BAT1502ELE6327XTMA1
Infineon Technologies AG
|
查询价格和库存 |
|
Yes | Active | 110 mA | 410 mV | 0.24 pF | 5 µA | 100 mW | SILICON | 4 V | MIXER DIODE | SINGLE | YES | 1 | SCHOTTKY | X BAND | 1 V | LOW BARRIER | R-PBCC-N2 | e4 | 1 | 150 °C | -55 °C | NOT SPECIFIED | NOT SPECIFIED | 2 | PLASTIC/EPOXY | RECTANGULAR | CHIP CARRIER | Gold (Au) | NO LEAD | BOTTOM | 2065 | compliant | EAR99 | 8541.10.00.60 | 4 | |||||||||||||||||||||||
1SS351-TB-E
onsemi
|
查询价格和库存 |
|
Yes | Active | 30 mA | 230 mV | 25 µA | SILICON | RECTIFIER DIODE | SERIES CONNECTED, CENTER TAP, 2 ELEMENTS | YES | 5 V | 2 | SCHOTTKY | GENERAL PURPOSE | 1 | 500 mV | R-PDSO-G3 | e6 | TO-236AB | 1 | 125 °C | 260 | 30 | 3 | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | TIN BISMUTH | GULL WING | DUAL | 2260 | SC-59, SOT-23, 3 PIN | 3 | 318BJ | compliant | EAR99 | 8541.10.00.70 | 6.05 | 1SS351-TB-E | SC-59 / CP | Mainland China | |||||||||||||||||||
SMMSD301T1G
onsemi
|
查询价格和库存 |
|
Yes | Active | 200 mA | 450 mV | SILICON | MIXER DIODE | SINGLE | YES | 30 V | 1 | SCHOTTKY | e3 | 1 | 125 °C | 260 | 30 | Matte Tin (Sn) - annealed | 2260 | 2 | 425-04 | compliant | EAR99 | 8541.10.00.60 | 4 | SMMSD301T1G | SOD-123 2 LEAD | Mainland China | ||||||||||||||||||||||||||||||||
BAS70-06FILM
STMicroelectronics
|
查询价格和库存 |
|
Yes | Active | 70 mA | 410 mV | 2 pF | 200 mW | SILICON | MIXER DIODE | COMMON ANODE, 2 ELEMENTS | YES | 70 V | 2 | SCHOTTKY | ULTRA HIGH FREQUENCY | 1 A | Not Qualified | R-PDSO-G3 | e3 | 1 | 150 °C | -55 °C | 235 | 30 | 3 | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | Matte Tin (Sn) | GULL WING | DUAL | 2443 | compliant | EAR99 | 8541.10.00.60 | 4 | BAS70-06FILM | Mainland China | ||||||||||||||||||||||
MBD770DWT1G
onsemi
|
查询价格和库存 |
|
Yes | Active | 100 mA | 1 V | 1 pF | 200 nA | 380 mW | SILICON | 70 V | MIXER DIODE | SEPARATE, 2 ELEMENTS | YES | 70 V | 2 | SCHOTTKY | FAST RECOVERY | ULTRA HIGH FREQUENCY | 1 A | 1 | 35 V | Not Qualified | R-PDSO-G6 | e3 | AEC-Q101 | 1 | 150 °C | -55 °C | 260 | 40 | 6 | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | Matte Tin (Sn) - annealed | GULL WING | DUAL | 2260 | HALOGEN FREE AND ROHS COMPLIANT, MINIATURE, CASE 419B-02, SC-70, SC-88, 6 PIN | 6 | 419B-02 | compliant | EAR99 | 8541.10.00.60 | 6.15 | MBD770DWT1G | SC-88/SC70-6/SOT-363 6 LEAD | Mainland China | ||||||||||||
CDB7620-000
Skyworks Solutions Inc
|
查询价格和库存 |
|
Yes | Yes | Active | 350 mV | 0.15 pF | SILICON | 2 V | MIXER DIODE | SINGLE | YES | 1 | SCHOTTKY | LOW NOISE | KU BAND | -40 dBm | LOW BARRIER | Not Qualified | S-XUUC-N1 | 1 | 260 | 40 | 2 | UNSPECIFIED | SQUARE | UNCASED CHIP | NO LEAD | UPPER | 2408 | DIE-2 | 2 | compliant | EAR99 | 8541.10.00.60 | 1997-01-01 | 4 | DIE | |||||||||||||||||||||||
JDH2S02SL,L3F
Toshiba America Electronic Components
|
查询价格和库存 |
|
Active | MIXER DIODE | NOT SPECIFIED | NOT SPECIFIED | 2484 | unknown | EAR99 | 8541.10.00.60 | 4 | ||||||||||||||||||||||||||||||||||||||||||||||||||
MA4E2502L-1246
MACOM
|
查询价格和库存 |
|
No | Yes | Active | 0.12 pF | 18 GHz | SILICON | MIXER DIODE | SINGLE | YES | 1 | SCHOTTKY | KU BAND | 100 mW | LOW BARRIER | Not Qualified | R-XBCC-N2 | 125 °C | -40 °C | NOT SPECIFIED | NOT SPECIFIED | 2 | UNSPECIFIED | RECTANGULAR | CHIP CARRIER | NO LEAD | BOTTOM | 2149 | R-XBCC-N2 | 2 | CASE 1246 | compliant | EAR99 | 8541.10.00.60 | 4 | |||||||||||||||||||||||||
DAN222M3T5G
onsemi
|
查询价格和库存 |
|
Yes | Active | 100 mA | 1.2 V | 4 ns | 3.5 pF | 260 mW | SILICON | MIXER DIODE | COMMON CATHODE, 2 ELEMENTS | YES | 80 V | 2 | Not Qualified | R-PDSO-F3 | e3 | 1 | 150 °C | 260 | 30 | 3 | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | MATTE TIN | FLAT | DUAL | 2260 | CASE 631AA-01, 3 PIN | 3 | 631AA | compliant | EAR99 | 8541.10.00.60 | 4 | DAN222M3T5G | SOT-723 3 LEAD | Mainland China | |||||||||||||||||||||
CDB7619-000
Skyworks Solutions Inc
|
查询价格和库存 |
|
Yes | Yes | Active | 375 mV | 0.1 pF | SILICON | 3 V | MIXER DIODE | SINGLE | YES | 1 | SCHOTTKY | LOW NOISE | K BAND | -50 dBm | LOW BARRIER | Not Qualified | S-XUUC-N1 | NOT SPECIFIED | NOT SPECIFIED | 2 | UNSPECIFIED | SQUARE | UNCASED CHIP | NO LEAD | UPPER | 2408 | DIE-2 | 2 | compliant | EAR99 | 8541.10.00.60 | 1997-01-01 | 4 | DIE | ||||||||||||||||||||||||
MBD330DWT1G
onsemi
|
查询价格和库存 |
|
Yes | Active | 200 mA | 450 mV | 1.5 pF | 200 nA | 120 mW | SILICON | 30 V | MIXER DIODE | SERIES CONNECTED, CENTER TAP, 2 ELEMENTS | YES | 30 V | 2 | SCHOTTKY | EFFICIENCY | ULTRA HIGH FREQUENCY | 1 | 25 V | Not Qualified | R-PDSO-G6 | e3 | 1 | 125 °C | -55 °C | 260 | 30 | 6 | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | Matte Tin (Sn) - annealed | GULL WING | DUAL | 2260 | HALOGEN FREE AND ROHS COMPLIANT, CASE 419B-02, SC-70, SC-88, 6 PIN | 6 | 419B-02 | compliant | EAR99 | 8541.10.00.60 | 6.05 | MBD330DWT1G | SC-88/SC70-6/SOT-363 6 LEAD | Mainland China | ||||||||||||||
NSVMMBD353LT1G
onsemi
|
查询价格和库存 |
|
Yes | Active | SILICON | MIXER DIODE | YES | e3 | 1 | 150 °C | 260 | 30 | MATTE TIN | 2260 | 3 | 318-08 | compliant | EAR99 | 8541.10.00.60 | 4 | NSVMMBD353LT1G | SOT-23 (TO-236) 3 LEAD | Mainland China | ||||||||||||||||||||||||||||||||||||||
BAT17E6327HTSA1
Infineon Technologies AG
|
查询价格和库存 |
|
Yes | Yes | Active | 0.75 pF | 150 mW | SILICON | MIXER DIODE | SINGLE | YES | 1 | SCHOTTKY | VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY | Not Qualified | R-PDSO-G3 | e3 | 1 | 150 °C | NOT SPECIFIED | NOT SPECIFIED | 3 | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | Matte Tin (Sn) | GULL WING | DUAL | 2065 | R-PDSO-G3 | 3 | compliant | EAR99 | 8541.10.00.60 | 4 | BAT17E6327HTSA1 | SOT-23 | ||||||||||||||||||||||||
DAP222M3T5G
onsemi
|
查询价格和库存 |
|
Yes | Active | 3.5 pF | 260 mW | SILICON | MIXER DIODE | COMMON ANODE, 2 ELEMENTS | YES | 2 | Not Qualified | R-PDSO-F3 | e3 | 1 | 150 °C | 260 | 30 | 3 | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | MATTE TIN | FLAT | DUAL | 2260 | CASE 631AA-01, 3 PIN | 3 | 631AA | compliant | EAR99 | 8541.10.00.60 | 4 | DAP222M3T5G | SOT-723 3 LEAD | Mainland China | |||||||||||||||||||||||||
MMBD101LT1G
onsemi
|
查询价格和库存 |
|
Yes | Active | RECTIFIER DIODE | Not Qualified | e3 | 1 | 260 | 30 | Matte Tin (Sn) - annealed | 2260 | TO-236, 3 PIN | 3 | 318-08 | compliant | EAR99 | 4 | MMBD101LT1G | SOT-23 (TO-236) 3 LEAD | Mainland China | ||||||||||||||||||||||||||||||||||||||||
MMBD301M3T5G
onsemi
|
查询价格和库存 |
|
Yes | Active | 450 mV | 1.5 pF | 200 mW | SILICON | MIXER DIODE | SINGLE | YES | 30 V | 1 | SCHOTTKY | ULTRA HIGH FREQUENCY | Not Qualified | R-PDSO-F3 | e3 | 1 | 125 °C | -55 °C | 260 | 30 | 3 | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | MATTE TIN | FLAT | DUAL | 2260 | HALOGEN AND LEAD FREE, CASE 631AA-01, 3 PIN | 3 | 631AA | compliant | EAR99 | 8541.10.00.60 | 4 | MMBD301M3T5G | SOT-723 3 LEAD | Mainland China | ||||||||||||||||||||
NSR201MXT5G
onsemi
|
查询价格和库存 |
|
Yes | Active | 50 mA | 320 mV | 0.2 pF | 10 µA | SILICON | MIXER DIODE | SINGLE | YES | 1 | SCHOTTKY | C BAND TO KU BAND | 2 V | R-PBCC-N2 | e4 | 1 | 150 °C | -55 °C | 260 | 30 | 2 | PLASTIC/EPOXY | RECTANGULAR | CHIP CARRIER | Nickel/Palladium/Gold (Ni/Pd/Au) | NO LEAD | BOTTOM | 2260 | X2DFN2, 2 PIN | 714AB | compliant | EAR99 | 8541.10.00.60 | 4 | NSR201MXT5G | Mainland China | ||||||||||||||||||||||
BAT62E6327HTSA1
Infineon Technologies AG
|
查询价格和库存 |
|
Yes | Yes | Active | 20 mA | 1 V | 0.6 pF | 6 GHz | 10 µA | 100 mW | SILICON | 40 V | RECTIFIER DIODE | ANTI-PARALLEL CONNECTED, 2 ELEMENTS | YES | 2 | SCHOTTKY | C BAND | 40 V | LOW BARRIER | Not Qualified | R-PDSO-G4 | e3 | 1 | 125 °C | -55 °C | NOT SPECIFIED | NOT SPECIFIED | ANODE | 4 | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | Tin (Sn) | GULL WING | DUAL | 2065 | R-PDSO-G4 | compliant | EAR99 | 8541.10.00.60 | 4 | BAT62E6327HTSA1 | |||||||||||||||||
1SS356VMFHTE-17
ROHM Semiconductor
|
查询价格和库存 |
|
Yes | Active | 100 mA | 1 V | 1.2 pF | 10 nA | SILICON | MIXER DIODE | SINGLE | YES | 1 | HIGH RELIABILITY | HIGH FREQUENCY | 6 V | R-PDSO-F2 | AEC-Q101 | 150 °C | 2 | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | FLAT | DUAL | 2363 | SC-90A, SOD-323FL, 2 PIN | compliant | 4 |