型号 | Most Relevant | Technical | Compliance | Operating Conditions | Physical | Dimensions | Other | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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数据手册 |
单价/库存
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风险等级 | 是否无铅 |
是否Rohs认证
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生命周期 | 内存密度 | 内存宽度 | 组织 |
标称供电电压 (Vsup)
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最长访问时间 | 最大时钟频率 (fCLK) |
刷新周期
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访问模式 | 内存集成电路类型 | 其他特性 | I/O 类型 | 交错的突发长度 | 功能数量 | 端口数量 | 字数代码 | 字数 | 工作模式 | 输出特性 |
反向引出线
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自我刷新
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连续突发长度
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最大待机电流
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最小待机电流
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最大压摆率
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最大供电电压 (Vsup)
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最小供电电压 (Vsup)
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技术 |
温度等级
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JESD-30 代码 |
认证状态
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JESD-609代码 | 湿度敏感等级 | 最高工作温度 | 最低工作温度 | 峰值回流温度(摄氏度) |
处于峰值回流温度下的最长时间
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端子数量 | 封装主体材料 | 封装代码 | 封装等效代码 | 封装形状 | 封装形式 |
表面贴装
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端子面层
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端子形式
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端子节距
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端子位置
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座面最大高度
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长度 |
宽度
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mfrid
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包装说明
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是否符合REACH标准
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Country Of Origin
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ECCN代码
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HTS代码
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YTEOL
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零件包装代码
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针数
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IS42S32800J-7BLI
Integrated Silicon Solution Inc
|
查询价格和库存 |
|
Yes | Active | 268.4355 Mbit | 32 | 8MX32 | 3.3 V | 5.4 ns | 143 MHz | 4096 | FOUR BANK PAGE BURST | SYNCHRONOUS DRAM | AUTO/SELF REFRESH | COMMON | 1,2,4,8 | 1 | 1 | 8000000 | 8.3886 M | SYNCHRONOUS | 3-STATE | YES | 1,2,4,8,FP | 4 mA | 170 µA | 3.6 V | 3 V | CMOS | INDUSTRIAL | R-PBGA-B90 | e1 | 3 | 85 °C | -40 °C | 260 | 10 | 90 | PLASTIC/EPOXY | TFBGA | BGA90,9X15,32 | RECTANGULAR | GRID ARRAY, THIN PROFILE, FINE PITCH | YES | Tin/Silver/Copper (Sn/Ag/Cu) | BALL | 800 µm | BOTTOM | 1.2 mm | 13 mm | 8 mm | 2070 | TFBGA, | compliant | Mainland China, Taiwan | EAR99 | 8542.32.00.24 | 4 | ||||||||
MT41K512M8DA-107:P
Micron Technology Inc
|
查询价格和库存 |
|
Yes | Active | 4.295 Gbit | 8 | 512MX8 | 1.35 V | 20 ns | 933 MHz | 8192 | MULTI BANK PAGE BURST | DDR3L DRAM | AUTO/SELF REFRESH; ALSO OPERATES AT 1.5V NOMINAL SUPPLY | COMMON | 8 | 1 | 1 | 512000000 | 536.8709 M | SYNCHRONOUS | 3-STATE | YES | 8 | 15.3 µA | 219 µA | 1.45 V | 1.283 V | CMOS | OTHER | R-PBGA-B78 | 85 °C | NOT SPECIFIED | NOT SPECIFIED | 78 | PLASTIC/EPOXY | TFBGA | BGA78,9X13,32 | RECTANGULAR | GRID ARRAY, THIN PROFILE, FINE PITCH | YES | BALL | 800 µm | BOTTOM | 1.2 mm | 10.5 mm | 8 mm | 2190 | FBGA-78 | compliant | EAR99 | 8542.32.00.36 | 5.1 | |||||||||||||
IS42S16160J-7TLI
Integrated Silicon Solution Inc
|
查询价格和库存 |
|
Yes | Active | 268.4355 Mbit | 16 | 16MX16 | 3.3 V | 5.4 ns | FOUR BANK PAGE BURST | SYNCHRONOUS DRAM | PROGRAMMABLE CAS LATENCY; AUTO/SELF REFRESH | 1 | 1 | 16000000 | 16.7772 M | SYNCHRONOUS | YES | 3.6 V | 3 V | CMOS | INDUSTRIAL | R-PDSO-G54 | e3 | 3 | 85 °C | -40 °C | 260 | 10 | 54 | PLASTIC/EPOXY | TSOP2 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE | YES | Matte Tin (Sn) | GULL WING | 800 µm | DUAL | 1.2 mm | 22.22 mm | 10.16 mm | 2070 | TSOP2, | compliant | Mainland China, Taiwan | EAR99 | 8542.32.00.24 | 4 | |||||||||||||||||
MT47H128M8SH-25E:M
Micron Technology Inc
|
查询价格和库存 |
|
Yes | Yes | Active | 1.0737 Gbit | 8 | 128MX8 | 1.8 V | 400 ps | 400 MHz | 8192 | MULTI BANK PAGE BURST | DDR2 DRAM | AUTO/SELF REFRESH | COMMON | 4,8 | 1 | 1 | 128000000 | 134.2177 M | SYNCHRONOUS | 3-STATE | YES | 4,8 | 1.9 V | 1.7 V | CMOS | OTHER | R-PBGA-B60 | Not Qualified | e1 | 85 °C | 260 | 30 | 60 | PLASTIC/EPOXY | TFBGA | BGA60,9X11,32 | RECTANGULAR | GRID ARRAY, THIN PROFILE, FINE PITCH | YES | TIN SILVER COPPER | BALL | 800 µm | BOTTOM | 1.2 mm | 10 mm | 8 mm | 2190 | TFBGA, BGA60,9X11,32 | compliant | EAR99 | 8542.32.00.32 | 4.75 | BGA | 60 | |||||||||
IS42S16160J-7TL
Integrated Silicon Solution Inc
|
查询价格和库存 |
|
Yes | Active | 268.4355 Mbit | 16 | 16MX16 | 3.3 V | 5.4 ns | FOUR BANK PAGE BURST | SYNCHRONOUS DRAM | PROGRAMMABLE CAS LATENCY; AUTO/SELF REFRESH | 1 | 1 | 16000000 | 16.7772 M | SYNCHRONOUS | YES | 3.6 V | 3 V | CMOS | COMMERCIAL | R-PDSO-G54 | 70 °C | NOT SPECIFIED | NOT SPECIFIED | 54 | PLASTIC/EPOXY | TSOP2 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE | YES | GULL WING | 800 µm | DUAL | 1.2 mm | 22.22 mm | 10.16 mm | 2070 | TSOP2, | compliant | Mainland China, Taiwan | EAR99 | 8542.32.00.24 | 4 | |||||||||||||||||||||
MT40A1G8SA-062E:R
Micron Technology Inc
|
查询价格和库存 |
|
Active | 8.5899 Gbit | 8 | 1GX8 | 1.2 V | 8192 | MULTI BANK PAGE BURST | DDR4 DRAM | AUTO/SELF REFRESH | COMMON | 8 | 1 | 1 | 1000000000 | 1.0737 G | SYNCHRONOUS | NO | YES | 1.26 V | 1.14 V | CMOS | R-PBGA-B78 | 95 °C | NOT SPECIFIED | NOT SPECIFIED | 78 | PLASTIC/EPOXY | TFBGA | BGA78,6X13,32 | RECTANGULAR | GRID ARRAY, THIN PROFILE, FINE PITCH | YES | BALL | 800 µm | BOTTOM | 1.2 mm | 11 mm | 7.5 mm | 2190 | compliant | 5.1 | |||||||||||||||||||||||
AS4C4M16SA-7BCN
Alliance Memory Inc
|
查询价格和库存 |
|
Yes | Active | 67.1089 Mbit | 16 | 4MX16 | 3.3 V | 5.4 ns | FOUR BANK PAGE BURST | SYNCHRONOUS DRAM | AUTO/SELF REFRESH | 1 | 1 | 4000000 | 4.1943 M | SYNCHRONOUS | YES | 3.6 V | 3 V | CMOS | COMMERCIAL | S-PBGA-B54 | e1 | 3 | 70 °C | 54 | PLASTIC/EPOXY | TFBGA | SQUARE | GRID ARRAY, THIN PROFILE, FINE PITCH | YES | TIN SILVER COPPER | BALL | 800 µm | BOTTOM | 1.2 mm | 8 mm | 8 mm | 1689 | TFBGA-54 | compliant | Taiwan | EAR99 | 8542.32.00.02 | 4 | ||||||||||||||||||||
IS43R16320E-5TL-TR
Integrated Silicon Solution Inc
|
查询价格和库存 |
|
Yes | Active | 536.8709 Mbit | 16 | 32MX16 | 2.5 V | 700 ps | FOUR BANK PAGE BURST | DDR1 DRAM | AUTO/SELF REFRESH | 1 | 1 | 32000000 | 33.5544 M | SYNCHRONOUS | YES | 2.7 V | 2.3 V | CMOS | COMMERCIAL | R-PDSO-G66 | 70 °C | NOT SPECIFIED | NOT SPECIFIED | 66 | PLASTIC/EPOXY | TSOP2 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE | YES | GULL WING | 650 µm | DUAL | 1.2 mm | 22.22 mm | 10.16 mm | 2070 | TSOP2, | compliant | Mainland China, Taiwan | EAR99 | 8542.32.00.28 | 4.25 | |||||||||||||||||||||
AS4C32M16SB-7TIN
Alliance Memory Inc
|
查询价格和库存 |
|
Yes | Yes | Active | 536.8709 Mbit | 16 | 32MX16 | 3.3 V | 5.4 ns | FOUR BANK PAGE BURST | SYNCHRONOUS DRAM | AUTO/SELF REFRESH | 1 | 1 | 32000000 | 33.5544 M | SYNCHRONOUS | YES | 3.6 V | 3 V | CMOS | INDUSTRIAL | R-PDSO-G54 | e3 | 3 | 85 °C | -40 °C | 54 | PLASTIC/EPOXY | TSOP2 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE | YES | TIN | GULL WING | 800 µm | DUAL | 1.2 mm | 22.22 mm | 10.16 mm | 1689 | compliant | Taiwan | EAR99 | 8542.32.00.28 | 4 | |||||||||||||||||||
MT47H32M16NF-25E:H
Micron Technology Inc
|
查询价格和库存 |
|
Yes | Yes | Active | 536.8709 Mbit | 16 | 32MX16 | 1.8 V | 400 ps | 400 MHz | 8192 | FOUR BANK PAGE BURST | DDR2 DRAM | AUTO/SELF REFRESH | COMMON | 4,8 | 1 | 1 | 32000000 | 33.5544 M | SYNCHRONOUS | 3-STATE | YES | 4,8 | 10 mA | 215 µA | 1.9 V | 1.7 V | CMOS | OTHER | R-PBGA-B84 | Not Qualified | e1 | 85 °C | 260 | 30 | 84 | PLASTIC/EPOXY | TFBGA | BGA84,9X15,32 | RECTANGULAR | GRID ARRAY, THIN PROFILE, FINE PITCH | YES | Tin/Silver/Copper (Sn96.5Ag3.0Cu0.5) | BALL | 800 µm | BOTTOM | 1.2 mm | 12.5 mm | 8 mm | 2190 | FBGA-84 | not_compliant | EAR99 | 8542.32.00.28 | 4.75 | BGA | 84 | |||||||
AS4C32M16SB-7TCN
Alliance Memory Inc
|
查询价格和库存 |
|
Yes | Yes | Active | 536.8709 Mbit | 16 | 32MX16 | 3.3 V | 5.4 ns | FOUR BANK PAGE BURST | SYNCHRONOUS DRAM | AUTO/SELF REFRESH | 1 | 1 | 32000000 | 33.5544 M | SYNCHRONOUS | YES | 3.6 V | 3 V | CMOS | COMMERCIAL | R-PDSO-G54 | e3 | 3 | 70 °C | 54 | PLASTIC/EPOXY | TSOP2 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE | YES | TIN | GULL WING | 800 µm | DUAL | 1.2 mm | 22.22 mm | 10.16 mm | 1689 | compliant | Taiwan | EAR99 | 8542.32.00.28 | 4 | ||||||||||||||||||||
AS4C32M16SB-7TINTR
Alliance Memory Inc
|
查询价格和库存 |
|
Yes | Yes | Active | 536.8709 Mbit | 16 | 32MX16 | 3.3 V | 5.4 ns | 143 MHz | 8192 | FOUR BANK PAGE BURST | SYNCHRONOUS DRAM | AUTO/SELF REFRESH | COMMON | 1,2,4,8 | 1 | 1 | 32000000 | 33.5544 M | SYNCHRONOUS | 3-STATE | YES | 1,2,4,8,FP | 60 mA | 150 µA | 3.6 V | 3 V | CMOS | R-PDSO-G54 | e3 | 3 | 85 °C | -40 °C | 54 | PLASTIC/EPOXY | TSOP2 | TSSOP54,.46,32 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE | YES | TIN | GULL WING | 800 µm | DUAL | 1.2 mm | 22.22 mm | 10.16 mm | 1689 | compliant | Taiwan | EAR99 | 8542.32.00.28 | 4 | |||||||||||
MT47H256M8EB-25E:C
Micron Technology Inc
|
查询价格和库存 |
|
Yes | Yes | Active | 2.1475 Gbit | 8 | 256MX8 | 1.8 V | 400 ps | 400 MHz | 8192 | MULTI BANK PAGE BURST | DDR2 DRAM | AUTO/SELF REFRESH | COMMON | 4,8 | 1 | 1 | 256000000 | 268.4355 M | SYNCHRONOUS | 3-STATE | YES | 4,8 | 12 mA | 250 µA | 1.9 V | 1.7 V | CMOS | OTHER | R-PBGA-B60 | Not Qualified | e1 | 85 °C | 260 | 30 | 60 | PLASTIC/EPOXY | TFBGA | BGA60,9X11,32 | RECTANGULAR | GRID ARRAY, THIN PROFILE, FINE PITCH | YES | TIN SILVER COPPER | BALL | 800 µm | BOTTOM | 1.2 mm | 11.5 mm | 9 mm | 2190 | TFBGA, BGA60,9X11,32 | compliant | EAR99 | 8542.32.00.36 | 4.75 | BGA | 60 | |||||||
IS42S16160J-6BLI
Integrated Silicon Solution Inc
|
查询价格和库存 |
|
Yes | Active | 268.4355 Mbit | 16 | 16MX16 | 3.3 V | 5.4 ns | FOUR BANK PAGE BURST | SYNCHRONOUS DRAM | PROGRAMMABLE CAS LATENCY; AUTO/SELF REFRESH | 1 | 1 | 16000000 | 16.7772 M | SYNCHRONOUS | YES | 3.6 V | 3 V | CMOS | INDUSTRIAL | S-PBGA-B54 | e1 | 85 °C | -40 °C | 260 | 54 | PLASTIC/EPOXY | TFBGA | SQUARE | GRID ARRAY, THIN PROFILE, FINE PITCH | YES | TIN SILVER COPPER | BALL | 800 µm | BOTTOM | 1.2 mm | 8 mm | 8 mm | 2070 | TFBGA, | compliant | Mainland China, Taiwan | EAR99 | 8542.32.00.24 | 4 | |||||||||||||||||||
IS42S16400J-7TLI
Integrated Silicon Solution Inc
|
查询价格和库存 |
|
Yes | Active | 67.1089 Mbit | 16 | 4MX16 | 3.3 V | 5.4 ns | 143 MHz | 4096 | FOUR BANK PAGE BURST | SYNCHRONOUS DRAM | AUTO/SELF REFRESH | COMMON | 1,2,4,8 | 1 | 1 | 4000000 | 4.1943 M | SYNCHRONOUS | 3-STATE | NO | YES | 1,2,4,8,FP | 70 µA | 3.6 V | 3 V | CMOS | INDUSTRIAL | R-PDSO-G54 | Not Qualified | e3 | 85 °C | -40 °C | 260 | 30 | 54 | PLASTIC/EPOXY | TSOP2 | TSOP54,.46,32 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE | YES | MATTE TIN | GULL WING | 800 µm | DUAL | 1.2 mm | 22.22 mm | 10.16 mm | 2070 | TSOP2, TSOP54,.46,32 | compliant | Mainland China, Taiwan | EAR99 | 8542.32.00.02 | 4 | TSOP2 | 54 | ||||||
IS42S32800J-7TLI
Integrated Silicon Solution Inc
|
查询价格和库存 |
|
Yes | Active | 268.4355 Mbit | 32 | 8MX32 | 3.3 V | 5.4 ns | 143 MHz | 4096 | FOUR BANK PAGE BURST | SYNCHRONOUS DRAM | AUTO/SELF REFRESH | COMMON | 1,2,4,8 | 1 | 1 | 8000000 | 8.3886 M | SYNCHRONOUS | 3-STATE | YES | 1,2,4,8,FP | 4 mA | 170 µA | 3.6 V | 3 V | CMOS | INDUSTRIAL | R-PDSO-G86 | e3 | 3 | 85 °C | -40 °C | 260 | 10 | 86 | PLASTIC/EPOXY | TSOP2 | TSSOP86,.46,20 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE | YES | Tin (Sn) | GULL WING | 500 µm | DUAL | 1.2 mm | 22.22 mm | 10.16 mm | 2070 | TSOP2, | compliant | Mainland China, Taiwan | EAR99 | 8542.32.00.24 | 4 | ||||||||
IS43TR16128DL-107MBLI
Integrated Silicon Solution Inc
|
查询价格和库存 |
|
Yes | Active | 2.1475 Gbit | 16 | 128MX16 | 1.35 V | 20 ns | 934.58 MHz | 8192 | MULTI BANK PAGE BURST | DDR3L DRAM | AUTO/SELF REFRESH | COMMON | 4,8 | 1 | 1 | 128000000 | 134.2177 M | SYNCHRONOUS | 3-STATE | NO | YES | 4,8 | 16 mA | 1.283 V | 216 µA | 1.45 V | 1.283 V | CMOS | INDUSTRIAL | R-PBGA-B96 | e1 | 3 | 95 °C | -40 °C | 260 | 10 | 96 | PLASTIC/EPOXY | TFBGA | BGA96,9X16,32 | RECTANGULAR | GRID ARRAY, THIN PROFILE, FINE PITCH | YES | Tin/Silver/Copper (Sn/Ag/Cu) | BALL | 800 µm | BOTTOM | 1.2 mm | 13 mm | 9 mm | 2070 | TFBGA, | compliant | Mainland China, Taiwan | EAR99 | 8542.32.00.36 | 5.1 | ||||||
MT48LC16M16A2B4-6A:G
Micron Technology Inc
|
查询价格和库存 |
|
Yes | Active | 268.4355 Mbit | 16 | 16MX16 | 3.3 V | 5.4 ns | 167 MHz | 8192 | FOUR BANK PAGE BURST | SYNCHRONOUS DRAM | AUTO/SELF REFRESH | COMMON | 1,2,4,8 | 1 | 1 | 16000000 | 16.7772 M | SYNCHRONOUS | 3-STATE | YES | 1,2,4,8,FP | 2.5 mA | 150 µA | 3.6 V | 3 V | CMOS | COMMERCIAL | S-PBGA-B54 | Not Qualified | e1 | 70 °C | 260 | 30 | 54 | PLASTIC/EPOXY | VFBGA | BGA54,9X9,32 | SQUARE | GRID ARRAY, VERY THIN PROFILE, FINE PITCH | YES | TIN SILVER COPPER | BALL | 800 µm | BOTTOM | 1 mm | 8 mm | 8 mm | 2190 | VFBGA, BGA54,9X9,32 | compliant | EAR99 | 8542.32.00.24 | 4 | ||||||||||
IS42S16400J-7TL
Integrated Silicon Solution Inc
|
查询价格和库存 |
|
Yes | Active | 67.1089 Mbit | 16 | 4MX16 | 3.3 V | 5.4 ns | 143 MHz | 4096 | FOUR BANK PAGE BURST | SYNCHRONOUS DRAM | AUTO/SELF REFRESH | COMMON | 1,2,4,8 | 1 | 1 | 4000000 | 4.1943 M | SYNCHRONOUS | 3-STATE | NO | YES | 1,2,4,8,FP | 70 µA | 3.6 V | 3 V | CMOS | COMMERCIAL | R-PDSO-G54 | Not Qualified | e3 | 70 °C | 260 | 30 | 54 | PLASTIC/EPOXY | TSOP2 | TSOP54,.46,32 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE | YES | MATTE TIN | GULL WING | 800 µm | DUAL | 1.2 mm | 22.22 mm | 10.16 mm | 2070 | TSOP2, TSOP54,.46,32 | compliant | Mainland China, Taiwan | EAR99 | 8542.32.00.02 | 4 | TSOP2 | 54 | |||||||
AS4C16M16SA-6BIN
Alliance Memory Inc
|
查询价格和库存 |
|
Yes | Active | 268.4355 Mbit | 16 | 16MX16 | 3.3 V | 5 ns | 166 MHz | 8192 | FOUR BANK PAGE BURST | SYNCHRONOUS DRAM | AUTO/SELF REFRESH | COMMON | 1,2,4,8 | 1 | 1 | 16000000 | 16.7772 M | SYNCHRONOUS | YES | 1,2,4,8,FP | 25 mA | 60 µA | 3.6 V | 3 V | CMOS | INDUSTRIAL | S-PBGA-B54 | 3 | 85 °C | -40 °C | 54 | PLASTIC/EPOXY | TFBGA | BGA54,9X9,32 | SQUARE | GRID ARRAY, THIN PROFILE, FINE PITCH | YES | BALL | 800 µm | BOTTOM | 1.2 mm | 8 mm | 8 mm | 1689 | TFBGA-54 | compliant | Taiwan | EAR99 | 8542.32.00.24 | 4 |