Most Relevant | Technical | Compliance | Operating Conditions | Physical | Dimensions | Other | ||||||||||||||||||||||||||||||||||||||||||||||
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制造商型号 |
Composite Price
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风险等级 |
是否无铅
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是否Rohs认证
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生命周期
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最大二极管电容 | 标称二极管电容 |
最大功率耗散
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最大二极管正向电阻 | 二极管元件材料 | 最小击穿电压 | 二极管类型 | 配置 |
表面贴装
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元件数量 | 技术 | 其他特性 | 应用 | 二极管电阻测试电流 | 二极管电阻测试频率 | 频带 | 少数载流子标称寿命 |
反向测试电压
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认证状态
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JESD-30 代码 | JESD-609代码 |
参考标准
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JEDEC-95代码 | 湿度敏感等级 |
最高工作温度
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最低工作温度
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峰值回流温度(摄氏度)
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处于峰值回流温度下的最长时间
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外壳连接 | 端子数量 |
封装主体材料
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封装形状
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封装形式
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端子面层
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端子形式
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端子位置
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IHS 制造商
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零件包装代码
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包装说明
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针数
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制造商包装代码
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是否符合REACH标准
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HTS代码
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ECCN代码
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交付时间
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Samacsys Description
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BAP64-06,215
NXP Semiconductors
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查询价格 |
|
Yes | Active | 0.35 pF | 0.52 pF | 250 mW | 1.35 Ω | SILICON | 175 V | PIN DIODE | COMMON ANODE, 2 ELEMENTS | YES | 2 | POSITIVE-INTRINSIC-NEGATIVE | HIGH VOLTAGE | ATTENUATOR; SWITCHING | 500 µA | 100 MHz | S BAND | 1.55 µs | Not Qualified | R-PDSO-G3 | e3 | TO-236AB | 1 | 150 °C | -65 °C | 260 | NOT SPECIFIED | 3 | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | Tin (Sn) | GULL WING | DUAL | NXP SEMICONDUCTORS | TO-236 | R-PDSO-G3 | 3 | SOT23 | compliant | 8541.10.00.70 | ||||||||
1SV263-TL-E
ON Semiconductor
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查询价格 |
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Yes | Active | PIN DIODE | e6 | 1 | Tin/Bismuth (Sn/Bi) | ON SEMICONDUCTOR | 3 | 419AJ | compliant | EAR99 | 2 weeks | ||||||||||||||||||||||||||||||||||||||
BAP50-03,115
NXP Semiconductors
|
查询价格 |
|
Yes | Active | 0.55 pF | 0.55 pF | 500 mW | 5 Ω | SILICON | 50 V | PIN DIODE | SINGLE | YES | 1 | POSITIVE-INTRINSIC-NEGATIVE | 500 µA | 100 MHz | 1 V | Not Qualified | R-PDSO-G2 | e3 | 1 | 150 °C | -65 °C | 260 | NOT SPECIFIED | 2 | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | Tin (Sn) | GULL WING | DUAL | NXP SEMICONDUCTORS | SOD | R-PDSO-G2 | 2 | SOD323 | compliant | 8541.10.00.70 | ||||||||||||
BAP50-03-TP
Micro Commercial Components
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查询价格 |
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Yes | Active | 1.11 pF | 200 mW | 5 Ω | SILICON | PIN DIODE | SINGLE | YES | 1 | POSITIVE-INTRINSIC-NEGATIVE | Not Qualified | R-PDSO-G2 | 150 °C | -65 °C | NOT SPECIFIED | NOT SPECIFIED | 2 | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | GULL WING | DUAL | MICRO COMMERCIAL COMPONENTS CORP | ROHS COMPLIANT, PLASTIC PACKAGE-2 | 2 | compliant | 8541.10.00.80 | EAR99 | |||||||||||||||||||||
BAP64-03,115
NXP Semiconductors
|
查询价格 |
|
Yes | Active | 0.35 pF | 0.52 pF | 500 mW | 1.35 Ω | SILICON | 175 V | PIN DIODE | SINGLE | YES | 1 | POSITIVE-INTRINSIC-NEGATIVE | HIGH VOLTAGE | ATTENUATOR; SWITCHING | 500 µA | 100 MHz | S BAND | 1.55 µs | Not Qualified | R-PDSO-G2 | e3 | 1 | 150 °C | -65 °C | 260 | NOT SPECIFIED | 2 | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | Tin (Sn) | GULL WING | DUAL | NXP SEMICONDUCTORS | SOD | R-PDSO-G2 | 2 | SOD323 | compliant | 8541.10.00.70 | |||||||||
BAP65-02,115
NXP Semiconductors
|
查询价格 |
|
Yes | Active | 0.9 pF | 0.65 pF | 715 mW | 900 mΩ | SILICON | 30 V | PIN DIODE | SINGLE | YES | 1 | POSITIVE-INTRINSIC-NEGATIVE | HIGH VOLTAGE | ATTENUATOR; SWITCHING | 5 mA | 100 MHz | 170 ns | Not Qualified | R-PDSO-F2 | e3 | 1 | 150 °C | -65 °C | 260 | NOT SPECIFIED | 2 | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | Tin (Sn) | FLAT | DUAL | NXP SEMICONDUCTORS | SOD | R-PDSO-F2 | 2 | SOD523 | compliant | 8541.10.00.70 | NXP BAP65-02,115 PIN Diode, 100mA, 30V, 2-Pin I-IGIA | |||||||||
BAP64-04W,115
NXP Semiconductors
|
查询价格 |
|
Yes | Active | 0.35 pF | 0.52 pF | 240 mW | 1.35 Ω | SILICON | 100 V | PIN DIODE | SERIES CONNECTED, CENTER TAP, 2 ELEMENTS | YES | 2 | POSITIVE-INTRINSIC-NEGATIVE | ATTENUATOR; SWITCHING | 500 µA | 100 MHz | S BAND | 1.55 µs | Not Qualified | R-PDSO-G3 | e3 | 1 | 150 °C | -65 °C | 260 | NOT SPECIFIED | 3 | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | Tin (Sn) | GULL WING | DUAL | NXP SEMICONDUCTORS | SC-70 | R-PDSO-G3 | 3 | SOT323 | compliant | 8541.10.00.70 | ||||||||||
BAP50-04W,115
NXP Semiconductors
|
查询价格 |
|
Yes | Active | 0.6 pF | 0.45 pF | 5 Ω | SILICON | 50 V | PIN DIODE | SERIES CONNECTED, CENTER TAP, 2 ELEMENTS | YES | 2 | POSITIVE-INTRINSIC-NEGATIVE | 500 µA | 100 MHz | 1.05 µs | Not Qualified | R-PDSO-G3 | e3 | 1 | 150 °C | -65 °C | 260 | NOT SPECIFIED | 3 | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | Tin (Sn) | GULL WING | DUAL | NXP SEMICONDUCTORS | SC-70 | R-PDSO-G3 | 3 | SOT323 | compliant | 8541.10.00.70 | |||||||||||||
BAP50-02,115
NXP Semiconductors
|
查询价格 |
|
Yes | Active | 0.55 pF | 0.4 pF | 715 mW | 5 Ω | SILICON | 50 V | PIN DIODE | SINGLE | YES | 1 | POSITIVE-INTRINSIC-NEGATIVE | HIGH VOLTAGE | 500 µA | 100 MHz | 1.05 µs | Not Qualified | R-PDSO-F2 | e3 | 1 | 150 °C | -65 °C | 260 | NOT SPECIFIED | 2 | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | Tin (Sn) | FLAT | DUAL | NXP SEMICONDUCTORS | SOD | R-PDSO-F2 | 2 | SOD523 | compliant | 8541.10.00.70 | BAP50-02 PIN diode,50mA,50V | ||||||||||
BAP64-05,215
NXP Semiconductors
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查询价格 |
|
Yes | Active | 0.35 pF | 0.52 pF | 250 mW | 40 Ω | SILICON | 175 V | PIN DIODE | COMMON CATHODE, 2 ELEMENTS | YES | 2 | POSITIVE-INTRINSIC-NEGATIVE | HIGH VOLTAGE | ATTENUATOR; SWITCHING | 500 µA | 100 MHz | S BAND | 1.55 µs | Not Qualified | R-PDSO-G3 | e3 | 1 | 150 °C | -65 °C | 260 | NOT SPECIFIED | 3 | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | Tin (Sn) | GULL WING | DUAL | NXP SEMICONDUCTORS | TO-236 | R-PDSO-G3 | 3 | SOT23 | compliant | 8541.10.00.70 | |||||||||
BAP50-04,215
NXP Semiconductors
|
查询价格 |
|
Yes | Active | 0.6 pF | 0.45 pF | 250 mW | 5 Ω | SILICON | 50 V | PIN DIODE | SERIES CONNECTED, CENTER TAP, 2 ELEMENTS | YES | 2 | POSITIVE-INTRINSIC-NEGATIVE | 500 µA | 100 MHz | 1.05 µs | Not Qualified | R-PDSO-G3 | e3 | TO-236AB | 1 | 150 °C | -65 °C | 260 | 40 | 3 | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | Tin (Sn) | GULL WING | DUAL | NXP SEMICONDUCTORS | TO-236 | R-PDSO-G3 | 3 | SOT23 | compliant | 8541.10.00.70 | |||||||||||
BAP65-02,135
NXP Semiconductors
|
查询价格 |
|
Yes | Active | 0.65 pF | 950 mΩ | 30 V | PIN DIODE | YES | 5 mA | 100 MHz | 170 ns | e3 | 1 | 150 °C | 260 | NOT SPECIFIED | Tin (Sn) | NXP SEMICONDUCTORS | SOD | 2 | SOD523 | compliant | 8541.10.00.70 | ||||||||||||||||||||||||||||
BAP55LX,315
NXP Semiconductors
|
查询价格 |
|
Yes | Active | 0.28 pF | 0.28 pF | 135 mW | 4.5 Ω | SILICON | 50 V | PIN DIODE | SINGLE | YES | 1 | POSITIVE-INTRINSIC-NEGATIVE | ATTENUATOR; SWITCHING | 500 µA | 100 MHz | S BAND | 270 ns | 20 V | Not Qualified | R-PDSO-N2 | e3 | 1 | 150 °C | -65 °C | 260 | NOT SPECIFIED | 2 | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | Tin (Sn) | NO LEAD | DUAL | NXP SEMICONDUCTORS | DFN | R-PDSO-N2 | 2 | SOD882D | compliant | 8541.10.00.70 | |||||||||
BAP65-03,115
NXP Semiconductors
|
查询价格 |
|
Yes | Active | 0.9 pF | 0.65 pF | 500 mW | 900 mΩ | SILICON | 30 V | PIN DIODE | SINGLE | YES | 1 | POSITIVE-INTRINSIC-NEGATIVE | ATTENUATOR; SWITCHING | 5 mA | 100 MHz | 170 ns | Not Qualified | R-PDSO-G2 | e3 | 1 | 150 °C | -65 °C | 260 | NOT SPECIFIED | 2 | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | Tin (Sn) | GULL WING | DUAL | NXP SEMICONDUCTORS | SOD | R-PDSO-G2 | 2 | SOD323 | compliant | 8541.10.00.70 | NXP BAP65-03,115 PIN Diode, 100mA, 30V, 2-Pin UMD | ||||||||||
BAP64-04,215
NXP Semiconductors
|
查询价格 |
|
Yes | Active | 0.35 pF | 0.52 pF | 250 mW | 40 Ω | SILICON | 175 V | PIN DIODE | SERIES CONNECTED, CENTER TAP, 2 ELEMENTS | YES | 2 | POSITIVE-INTRINSIC-NEGATIVE | HIGH VOLTAGE | ATTENUATOR; SWITCHING | 500 µA | 100 MHz | S BAND | 1.55 µs | Not Qualified | R-PDSO-G3 | e3 | 1 | 150 °C | -65 °C | 260 | NOT SPECIFIED | 3 | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | Tin (Sn) | GULL WING | DUAL | NXP SEMICONDUCTORS | TO-236 | R-PDSO-G3 | 3 | SOT23 | compliant | 8541.10.00.70 | |||||||||
BAR64-05
Infineon Technologies AG
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查询价格 |
|
Yes | Yes | Active | 0.35 pF | 0.35 pF | 250 mW | 1.35 Ω | SILICON | 150 V | PIN DIODE | COMMON CATHODE, 2 ELEMENTS | YES | 2 | POSITIVE-INTRINSIC-NEGATIVE | LOW DISTORTION | ATTENUATOR; SWITCHING | 10 mA | MEDIUM FREQUENCY TO C BAND | 1.55 µs | 20 V | Not Qualified | R-PDSO-G3 | AEC-Q101 | 1 | 125 °C | -55 °C | NOT SPECIFIED | NOT SPECIFIED | 3 | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | GULL WING | DUAL | INFINEON TECHNOLOGIES AG | ROHS COMPLIANT PACKAGE-3 | 3 | compliant | 8541.10.00.80 | EAR99 | ||||||||||
BAP51-04W,115
NXP Semiconductors
|
查询价格 |
|
Yes | Active | 0.55 pF | 240 mW | 2.5 Ω | SILICON | PIN DIODE | SERIES CONNECTED, CENTER TAP, 2 ELEMENTS | YES | 2 | POSITIVE-INTRINSIC-NEGATIVE | 550 ns | Not Qualified | R-PDSO-G3 | e3 | 1 | 150 °C | -65 °C | 260 | NOT SPECIFIED | 3 | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | TIN | GULL WING | DUAL | NXP SEMICONDUCTORS | SC-70 | R-PDSO-G3 | 3 | SOT323 | compliant | 8541.10.00.70 | ||||||||||||||||
BAR81WH6327XTSA1
Infineon Technologies AG
|
查询价格 |
|
Yes | Active | 1 pF | 100 mW | 1 Ω | SILICON | 30 V | PIN DIODE | SINGLE | YES | 1 | POSITIVE-INTRINSIC-NEGATIVE | SWITCHING | 80 ns | R-PDSO-G4 | e3 | 1 | 150 °C | NOT SPECIFIED | NOT SPECIFIED | CATHODE | 4 | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | Tin (Sn) | GULL WING | DUAL | INFINEON TECHNOLOGIES AG | R-PDSO-G4 | compliant | 8541.10.00.80 | EAR99 | 6 weeks | ||||||||||||||||
BAP51-03,115
NXP Semiconductors
|
查询价格 |
|
Yes | Active | 0.55 pF | 0.55 pF | 500 mW | 2.5 Ω | SILICON | 60 V | PIN DIODE | SINGLE | YES | 1 | POSITIVE-INTRINSIC-NEGATIVE | 500 µA | 100 MHz | 550 ns | 1 V | Not Qualified | R-PDSO-G2 | e3 | 1 | 150 °C | -65 °C | 260 | NOT SPECIFIED | 2 | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | Tin (Sn) | GULL WING | DUAL | NXP SEMICONDUCTORS | SOD | R-PDSO-G2 | 2 | SOD323 | compliant | 8541.10.00.70 | PIN Diodes PIN GP 50V 50MA Silicon PIN diode SOD323 | ||||||||||
BAP50-05,215
NXP Semiconductors
|
查询价格 |
|
Yes | Active | 0.6 pF | 0.6 pF | 250 mW | 40 Ω | SILICON | 50 V | PIN DIODE | COMMON CATHODE, 2 ELEMENTS | YES | 2 | POSITIVE-INTRINSIC-NEGATIVE | 500 µA | 100 MHz | 1 V | Not Qualified | R-PDSO-G3 | e3 | 1 | 150 °C | -65 °C | 260 | NOT SPECIFIED | 3 | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | Tin (Sn) | GULL WING | DUAL | NXP SEMICONDUCTORS | TO-236 | R-PDSO-G3 | 3 | SOT23 | compliant | 8541.10.00.70 |