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DRAM: 266,743 个筛选结果
访问模式 (18)
最长访问时间 (50)
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最大时钟频率 (fCLK) (50)
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制造商 (50)
内存密度 (50)
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内存宽度 (26)
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组织 (50)
电源 (49)
刷新周期 (15)
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标称供电电压 (Vsup) (28)
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Most Relevant Technical Compliance Operating Conditions Physical Dimensions Other
制造商型号 Composite Price
风险等级 是否无铅 是否Rohs认证 生命周期 内存密度 内存宽度 组织 标称供电电压 (Vsup) 电源 最长访问时间 最大时钟频率 (fCLK) 刷新周期 访问模式 内存集成电路类型 其他特性 I/O 类型 交错的突发长度 功能数量 端口数量 字数代码 字数 工作模式 输出特性 反向引出线 自我刷新 连续突发长度 最大待机电流 最大压摆率 最大供电电压 (Vsup) 最小供电电压 (Vsup) 技术 温度等级 JESD-30 代码 认证状态 JESD-609代码 湿度敏感等级 最高工作温度 最低工作温度 峰值回流温度(摄氏度) 处于峰值回流温度下的最长时间 端子数量 封装主体材料 封装代码 封装等效代码 封装形状 封装形式 表面贴装 端子面层 端子形式 端子节距 端子位置 座面最大高度 长度 宽度 IHS 制造商
零件包装代码
包装说明
针数
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ECCN代码
HTS代码
交付时间
Samacsys Description
MT41K128M16JT-125:K
Micron Technology Inc
查询价格
Yes Yes Active 2.1475 Gbit 16 128MX16 1.35 V 1.35 V 225 ps 800 MHz 8192 MULTI BANK PAGE BURST DDR DRAM AUTO/SELF REFRESH COMMON 8 1 1 128000000 134.2177 M SYNCHRONOUS 3-STATE YES 8 12 mA 195 µA 1.45 V 1.283 V CMOS OTHER R-PBGA-B96 Not Qualified e1 95 °C 260 30 96 PLASTIC/EPOXY TFBGA BGA96,9X16,32 RECTANGULAR GRID ARRAY, THIN PROFILE, FINE PITCH YES Tin/Silver/Copper (Sn96.5Ag3.0Cu0.5) BALL 800 µm BOTTOM 1.2 mm 14 mm 8 mm MICRON TECHNOLOGY INC BGA TFBGA, BGA96,9X16,32 96 compliant EAR99 8542.32.00.36 16 weeks SDRAM - DDR3L Memory IC 2Gb (128M x 16) Parallel 800MHz 13.75ns 96-FBGA (8x14)
MT47H64M16NF-25E:M
Micron Technology Inc
查询价格
Yes Yes Active 1.0737 Gbit 16 64MX16 1.8 V 1.8 V 400 ps 400 MHz 8192 MULTI BANK PAGE BURST DDR DRAM SELF REFRESH COMMON 4,8 1 1 64000000 67.1089 M SYNCHRONOUS 3-STATE YES 4,8 1.9 V 1.7 V CMOS OTHER R-PBGA-B84 Not Qualified e1 85 °C 260 30 84 PLASTIC/EPOXY TFBGA BGA84,9X15,32 RECTANGULAR GRID ARRAY, THIN PROFILE, FINE PITCH YES Tin/Silver/Copper (Sn96.5Ag3.0Cu0.5) BALL 800 µm BOTTOM 1.2 mm 12.5 mm 8 mm MICRON TECHNOLOGY INC BGA TFBGA, BGA84,9X15,32 84 not_compliant EAR99 8542.32.00.32 3 weeks
IS42S32200L-7TL
Integrated Silicon Solution Inc
查询价格
Yes Active 67.1089 Mbit 32 2MX32 3.3 V 3.3 V 5.4 ns 143 MHz 4096 FOUR BANK PAGE BURST SYNCHRONOUS DRAM AUTO/SELF REFRESH COMMON 1,2,4,8 1 1 2000000 2.0972 M SYNCHRONOUS 3-STATE YES 1,2,4,8,FP 2 mA 90 µA 3.6 V 3 V CMOS COMMERCIAL R-PDSO-G86 Not Qualified 70 °C 86 PLASTIC/EPOXY TSOP2 TSSOP86,.46,20 RECTANGULAR SMALL OUTLINE, THIN PROFILE YES GULL WING 500 µm DUAL 1.2 mm 22.22 mm 10.16 mm INTEGRATED SILICON SOLUTION INC TSOP2 TSOP2, TSSOP86,.46,20 86 compliant EAR99 8542.32.00.02 6 weeks
IS42S32200L-6TLI
Integrated Silicon Solution Inc
查询价格
Yes Active 67.1089 Mbit 32 2MX32 3.3 V 3.3 V 5.4 ns 166 MHz 4096 FOUR BANK PAGE BURST SYNCHRONOUS DRAM AUTO/SELF REFRESH COMMON 1,2,4,8 1 1 2000000 2.0972 M SYNCHRONOUS 3-STATE YES 1,2,4,8,FP 2 mA 100 µA 3.6 V 3 V CMOS INDUSTRIAL R-PDSO-G86 Not Qualified e3 85 °C -40 °C 86 PLASTIC/EPOXY TSOP2 TSSOP86,.46,20 RECTANGULAR SMALL OUTLINE, THIN PROFILE YES Matte Tin (Sn) - annealed GULL WING 500 µm DUAL 1.2 mm 22.22 mm 10.16 mm INTEGRATED SILICON SOLUTION INC TSOP2 TSOP2, TSSOP86,.46,20 86 compliant EAR99 8542.32.00.02 6 weeks
MT41K256M8DA-125:K
Micron Technology Inc
查询价格
Yes Active 2.1475 Gbit 8 256MX8 1.35 V 1.35 V 225 ps 800 MHz 8192 MULTI BANK PAGE BURST DDR DRAM AUTO/SELF REFRESH COMMON 8 1 1 256000000 268.4355 M SYNCHRONOUS 3-STATE YES 8 12 mA 156 µA 1.45 V 1.283 V CMOS OTHER R-PBGA-B78 Not Qualified e1 3 95 °C 260 30 78 PLASTIC/EPOXY TFBGA BGA78,9X13,32 RECTANGULAR GRID ARRAY, THIN PROFILE, FINE PITCH YES Tin/Silver/Copper (Sn96.5Ag3.0Cu0.5) BALL 800 µm BOTTOM 1.2 mm 10.5 mm 8 mm MICRON TECHNOLOGY INC BGA TFBGA, BGA78,9X13,32 78 not_compliant EAR99 8542.32.00.36 16 weeks DDR3 Memory
IS43DR16640C-25DBL
Integrated Silicon Solution Inc
查询价格
Yes Active 1.0737 Gbit 16 64MX16 1.8 V 1.8 V 400 ps 400 MHz 8192 MULTI BANK PAGE BURST DDR DRAM AUTO/SELF REFRESH COMMON 4,8 1 1 64000000 67.1089 M SYNCHRONOUS 3-STATE YES 4,8 25 mA 280 µA 1.9 V 1.7 V CMOS OTHER R-PBGA-B84 Not Qualified e1 3 85 °C 260 10 84 PLASTIC/EPOXY TFBGA BGA84,9X15,32 RECTANGULAR GRID ARRAY, THIN PROFILE, FINE PITCH YES Tin/Silver/Copper (Sn/Ag/Cu) BALL 800 µm BOTTOM 1.2 mm 12.5 mm 8 mm INTEGRATED SILICON SOLUTION INC TFBGA, BGA84,9X15,32 compliant EAR99 6 weeks
W971GG6KB-25
Winbond Electronics Corp
查询价格
Yes Active 1.0737 Gbit 16 64MX16 1.8 V 1.8 V 400 ps 400 MHz 8192 MULTI BANK PAGE BURST DDR DRAM AUTO/SELF REFRESH COMMON 4,8 1 1 64000000 67.1089 M SYNCHRONOUS 3-STATE YES 4,8 8 mA 185 µA 1.9 V 1.7 V CMOS OTHER R-PBGA-B84 Not Qualified 85 °C NOT SPECIFIED NOT SPECIFIED 84 PLASTIC/EPOXY TFBGA BGA84,9X15,32 RECTANGULAR GRID ARRAY, THIN PROFILE, FINE PITCH YES BALL 800 µm BOTTOM 1.2 mm 12.5 mm 8 mm WINBOND ELECTRONICS CORP 8 X 12.50 MM, ROHS COMPLIANT, WBGA-84 compliant
MT41K256M16TW-107:P
Micron Technology Inc
查询价格
Yes Active 4.295 Gbit 16 256MX16 1.35 V MULTI BANK PAGE BURST DDR DRAM AUTO/SELF REFRESH 1 1 256000000 268.4355 M SYNCHRONOUS YES 1.45 V 1.283 V CMOS OTHER R-PBGA-B96 e1 95 °C 260 30 96 PLASTIC/EPOXY TFBGA RECTANGULAR GRID ARRAY, THIN PROFILE, FINE PITCH YES Tin/Silver/Copper (Sn/Ag/Cu) BALL 800 µm BOTTOM 1.2 mm 14 mm 8 mm MICRON TECHNOLOGY INC TFBGA, compliant EAR99 8542.32.00.36 16 weeks MICRON - MT41K256M16TW-107:P - SDRAM, 256M X 16BIT, 0 TO 95DEG C
MT47H128M16RT-25E:C
Micron Technology Inc
查询价格
Yes Yes Active 2.1475 Gbit 16 128MX16 1.8 V 1.8 V 400 ps 400 MHz 8192 MULTI BANK PAGE BURST DDR DRAM AUTO/SELF REFRESH COMMON 4,8 1 1 128000000 134.2177 M SYNCHRONOUS 3-STATE YES 4,8 12 mA 330 µA 1.9 V 1.7 V CMOS OTHER R-PBGA-B84 Not Qualified e1 85 °C 260 30 84 PLASTIC/EPOXY TFBGA BGA84,9X15,32 RECTANGULAR GRID ARRAY, THIN PROFILE, FINE PITCH YES Tin/Silver/Copper (Sn96.5Ag3.0Cu0.5) BALL 800 µm BOTTOM 1.2 mm 12.5 mm 9 mm MICRON TECHNOLOGY INC BGA TFBGA, BGA84,9X15,32 84 compliant EAR99 8542.32.00.36 16 weeks MICRON - MT47H128M16RT-25E:C - SDRAM, DDR2. 2GBIT, 84FBGA
MT48LC8M16A2P-6A:L
Micron Technology Inc
查询价格
Yes Active 134.2177 Mbit 16 8MX16 3.3 V 3.3 V 5.4 ns 167 MHz 4096 FOUR BANK PAGE BURST SYNCHRONOUS DRAM AUTO/SELF REFRESH COMMON 1,2,4,8 1 1 8000000 8.3886 M SYNCHRONOUS 3-STATE YES 1,2,4,8,FP 2.5 mA 100 µA 3.6 V 3 V CMOS COMMERCIAL R-PDSO-G54 Not Qualified e3 70 °C 260 30 54 PLASTIC/EPOXY TSOP2 TSOP54,.46,32 RECTANGULAR SMALL OUTLINE, THIN PROFILE YES Matte Tin (Sn) GULL WING 800 µm DUAL 1.2 mm 22.22 mm 10.16 mm MICRON TECHNOLOGY INC TSOP2 TSOP2, TSOP54,.46,32 54 compliant EAR99 8542.32.00.02 7 weeks
MT41K256M16TW-107IT:P
Micron Technology Inc
查询价格
Yes Active 4.295 Gbit 16 256MX16 1.35 V 20 ns MULTI BANK PAGE BURST DDR DRAM AUTO/SELF REFRESH; ALSO OPERATES AT 1.5V NOMINAL SUPPLY 1 1 256000000 268.4355 M SYNCHRONOUS YES 1.45 V 1.283 V CMOS R-PBGA-B96 260 30 96 PLASTIC/EPOXY TFBGA RECTANGULAR GRID ARRAY, THIN PROFILE, FINE PITCH YES Tin/Silver/Copper (Sn96.8Ag3.0Cu0.2) BALL 800 µm BOTTOM 1.2 mm 14 mm 8 mm MICRON TECHNOLOGY INC TFBGA, compliant EAR99 8542.32.00.36 256M X 16 DDR DRAM, 20NS, PBGA96
MT41K64M16TW-107:J
Micron Technology Inc
查询价格
Yes Active 1.0737 Gbit 16 64MX16 1.35 V 1.35 V 195 ps 933 MHz 8192 MULTI BANK PAGE BURST DDR DRAM AUTO/SELF REFRESH COMMON 8 1 1 64000000 67.1089 M SYNCHRONOUS 3-STATE YES 8 12 mA 219 µA 1.45 V 1.283 V CMOS R-PBGA-B96 Not Qualified 260 30 96 PLASTIC/EPOXY TFBGA BGA96,9X16,32 RECTANGULAR GRID ARRAY, THIN PROFILE, FINE PITCH YES BALL 800 µm BOTTOM 1.2 mm 14 mm 8 mm MICRON TECHNOLOGY INC TFBGA, BGA96,9X16,32 compliant 3 weeks SDRAM - DDR3L Memory IC 1Gb (64M x 16) Parallel 933MHz 20ns 96-FBGA (8x14)
IS42S16800F-6BLI
Integrated Silicon Solution Inc
查询价格
Yes Active 134.2177 Mbit 16 8MX16 3.3 V 3.3 V 5.4 ns 166 MHz 4096 FOUR BANK PAGE BURST SYNCHRONOUS DRAM AUTO/SELF REFRESH COMMON 1,2,4,8 1 1 8000000 8.3886 M SYNCHRONOUS 3-STATE YES 1,2,4,8,FP 2 mA 120 µA 3.6 V 3 V CMOS INDUSTRIAL S-PBGA-B54 Not Qualified