存储,EPROM_电子元器件选型

						Most Relevant							Technical																							Compliance			Operating Conditions						Physical											Dimensions			Other
制造商型号	Composite Price	风险等级	是否无铅	是否Rohs认证	生命周期	内存密度	内存宽度	组织	标称供电电压 (Vsup)	电源	最长访问时间	最大时钟频率 (fCLK)	内存集成电路类型	其他特性	备用内存宽度	数据保留时间-最小值	耐久性	I/O 类型	I2C控制字节	功能数量	字数代码	字数	工作模式	输出特性	并行/串行	编程电压	串行总线类型	最大待机电流	最大压摆率	最大供电电压 (Vsup)	最小供电电压 (Vsup)	技术	温度等级	最长写入周期时间 (tWC)	写保护	JESD-30 代码	认证状态	JESD-609代码	湿度敏感等级	最高工作温度	最低工作温度	峰值回流温度（摄氏度）	筛选级别	处于峰值回流温度下的最长时间	端子数量	封装主体材料	封装代码	封装等效代码	封装形状	封装形式	表面贴装	端子面层	端子形式	端子节距	端子位置	座面最大高度	长度	宽度	IHS 制造商	零件包装代码	包装说明	针数	是否符合REACH标准	ECCN代码	HTS代码	交付时间	Samacsys Description	制造商包装代码
5962-8606305YA e2v technologies	查询价格				Active	262.144 kbit	8	32KX8	5 V	5 V	150 ns		UVPROM					COMMON		1	32000	32.768 k	ASYNCHRONOUS	3-STATE	PARALLEL	12.5 V		300 µA	50 µA	5.5 V	4.5 V	CMOS	MILITARY			R-CQCC-N32	Qualified	e0		125 °C	-55 °C		38535Q/M;38534H;883B		32	CERAMIC, METAL-SEALED COFIRED	QCCN	LCC32,.45X.55	RECTANGULAR	CHIP CARRIER	YES	TIN LEAD	NO LEAD	1.27 mm	QUAD				TELEDYNE E2V (UK) LTD	QFJ	CERAMIC, LCC-32	32	compliant	EAR99	8542.32.00.61
AT93C46DY6-YH-E Microchip Technology Inc	查询价格			Yes	Active	1.024 kbit	16	64X16	5 V			2 MHz	EEPROM	ALSO OPERATES AT 1MHZ AT 2.7MIN	8	100	1000000 Write/Erase Cycles	SEPARATE		1	64	64 words	SYNCHRONOUS		SERIAL	5 V	MICROWIRE	15 µA	2 µA	5.5 V	4.5 V	CMOS	INDUSTRIAL	5 ms	SOFTWARE	R-PDSO-G8				85 °C	-40 °C				8	PLASTIC/EPOXY	HVSON	SOLCC8,.11,20	RECTANGULAR	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE, SHRINK PITCH	YES		NO LEAD	500 µm	DUAL	600 µm	3 mm	2 mm	MICROCHIP TECHNOLOGY INC		UDFN-8		compliant	EAR99	8542.32.00.51	8 weeks	EEPROM 1.8-5.5V, 2MHz, Ind Tmp, 8-UDFN
AT93C46DY6-YH-T Microchip Technology Inc	查询价格		Yes	Yes	Active	1.024 kbit	16	64X16	5 V	2/5 V		2 MHz	EEPROM	ALSO OPERATES AT 1MHZ AT 2.7MIN	8	100	1000000 Write/Erase Cycles	SEPARATE		1	64	64 words	SYNCHRONOUS		SERIAL	5 V	MICROWIRE	15 µA	2 µA	5.5 V	4.5 V	CMOS	INDUSTRIAL	5 ms	SOFTWARE	R-PDSO-G8	Not Qualified	e4	1	85 °C	-40 °C	260		40	8	PLASTIC/EPOXY	HVSON	SOLCC8,.11,20	RECTANGULAR	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE, SHRINK PITCH	YES	Nickel/Palladium/Gold (Ni/Pd/Au)	NO LEAD	500 µm	DUAL	600 µm	3 mm	2 mm	MICROCHIP TECHNOLOGY INC		UDFN-8		compliant			8 weeks
5962-8606306XA e2v technologies	查询价格				Active	262.144 kbit	8	32KX8	5 V	5 V	120 ns		UVPROM					COMMON		1	32000	32.768 k	ASYNCHRONOUS	3-STATE	PARALLEL	12.5 V		300 µA	65 µA	5.5 V	4.5 V	CMOS	MILITARY			R-GDIP-T28	Qualified	e0		125 °C	-55 °C		38535Q/M;38534H;883B		28	CERAMIC, GLASS-SEALED	DIP	DIP28,.6	RECTANGULAR	IN-LINE	NO	TIN LEAD	THROUGH-HOLE	2.54 mm	DUAL	5.72 mm	37.215 mm	15.24 mm	TELEDYNE E2V (UK) LTD		DIP, DIP28,.6		compliant	EAR99	8542.32.00.61
CAT24C128YI-GT3 ON Semiconductor	查询价格		Yes		Active					2/5 V						100	1000000 Write/Erase Cycles		1010DDDR								I2C								HARDWARE		Not Qualified	e4	1			260		40								Nickel/Palladium/Gold (Ni/Pd/Au)							ON SEMICONDUCTOR	TSSOP	,	8	compliant	EAR99	8542.32.00.51	8 weeks		948AL
CAT24C128HU4IGT3 ON Semiconductor	查询价格		Yes		Active					2/5 V						100	1000000 Write/Erase Cycles		1010DDDR								I2C								HARDWARE		Not Qualified	e4	1			NOT SPECIFIED		NOT SPECIFIED								Nickel/Palladium/Gold (Ni/Pd/Au)							ON SEMICONDUCTOR		,	8	compliant			4 weeks	128-Kb I2C Serial CMOS EEPROM Memory	517AZ
CAT24C128WI-GT3 ON Semiconductor	查询价格		Yes		Active					2/5 V						100	1000000 Write/Erase Cycles		1010DDDR								I2C								HARDWARE		Not Qualified	e4	1			260		40								Nickel/Palladium/Gold (Ni/Pd/Au)							ON SEMICONDUCTOR	SOIC	,	8	compliant	EAR99	8542.32.00.51		EEPROM Serial-I2C 128K 16Kx8 1.8-5V SO8 ... more	751BD
AT93C46E-PU Microchip Technology Inc	查询价格		Yes	Yes	Active	1.024 kbit	16	64X16	5 V	2/5 V		2 MHz	EEPROM	ALSO OPERATES AT 1MHZ AT 2.7MIN		100	1000000 Write/Erase Cycles	SEPARATE		1	64	64 words	SYNCHRONOUS		SERIAL	5 V	3-WIRE	15 µA	2 µA	5.5 V	4.5 V	CMOS	INDUSTRIAL	5 ms	SOFTWARE	R-PDIP-T8	Not Qualified	e3		85 °C	-40 °C	NOT APPLICABLE		NOT APPLICABLE	8	PLASTIC/EPOXY	DIP	DIP8,.3	RECTANGULAR	IN-LINE	NO	Matte Tin (Sn) - annealed	THROUGH-HOLE	2.54 mm	DUAL	5.334 mm	9.271 mm	7.62 mm	MICROCHIP TECHNOLOGY INC		DIP-8		compliant			5 weeks
AT93C46DN-SH-B Microchip Technology Inc	查询价格		Yes	Yes	Active	1.024 kbit	16	64X16	5 V	2/5 V		2 MHz	EEPROM	ALSO OPERATES AT 1MHZ AT 2.7MIN	8	100	1000000 Write/Erase Cycles	SEPARATE		1	64	64 words	SYNCHRONOUS		SERIAL	5 V	MICROWIRE	15 µA	2 µA	5.5 V	4.5 V	CMOS	INDUSTRIAL	5 ms	SOFTWARE	R-PDSO-G8	Not Qualified	e4	1	85 °C	-40 °C	260		40	8	PLASTIC/EPOXY	SOP	SOP8,.25	RECTANGULAR	SMALL OUTLINE	YES	Nickel/Palladium/Gold (Ni/Pd/Au)	GULL WING	1.27 mm	DUAL	1.75 mm	4.9 mm	3.9 mm	MICROCHIP TECHNOLOGY INC		SOIC-8		compliant			6 weeks	AT93C46DN-SH-B, Serial EEPROM Memory 1kbit, Serial-3 Wire, 1.8V, 8-Pin SOIC
AT93C46D-TH-T Microchip Technology Inc	查询价格		Yes	Yes	Active	1.024 kbit	16	64X16	5 V	2/5 V		2 MHz	EEPROM	ALSO OPERATES AT 1MHZ AT 2.7MIN	8	100	1000000 Write/Erase Cycles	SEPARATE		1	64	64 words	SYNCHRONOUS		SERIAL	5 V	MICROWIRE	15 µA	2 µA	5.5 V	4.5 V	CMOS	INDUSTRIAL	5 ms	SOFTWARE	R-PDSO-G8	Not Qualified	e4	1	85 °C	-40 °C	260		40	8	PLASTIC/EPOXY	TSOP1	TSSOP8,.25	RECTANGULAR	SMALL OUTLINE, THIN PROFILE	YES	Nickel/Palladium/Gold (Ni/Pd/Au)	GULL WING	650 µm	DUAL	1.2 mm	4.4 mm	3 mm	MICROCHIP TECHNOLOGY INC		TSSOP-8		compliant			6 weeks	EEPROM 8 PDIP 1.8V- 1.8V
AT93C46EN-SH-T Microchip Technology Inc	查询价格		Yes	Yes	Active	1.024 kbit	16	64X16	5 V	2/5 V		2 MHz	EEPROM	ALSO OPERATES AT 1MHZ AT 2.7MIN		100	1000000 Write/Erase Cycles	SEPARATE		1	64	64 words	SYNCHRONOUS		SERIAL	5 V	MICROWIRE	15 µA	2 µA	5.5 V	4.5 V	CMOS	INDUSTRIAL	5 ms	SOFTWARE	R-PDSO-G8	Not Qualified	e4	3	85 °C	-40 °C	260		40	8	PLASTIC/EPOXY	SOP	SOP8,.25	RECTANGULAR	SMALL OUTLINE	YES	Nickel/Palladium/Gold (Ni/Pd/Au)	GULL WING	1.27 mm	DUAL	1.75 mm	4.9 mm	3.9 mm	MICROCHIP TECHNOLOGY INC		SOIC-8		compliant			6 weeks	EEPROM 8 1.8V - 8 1.8V
AT93C46E-TH-B Microchip Technology Inc	查询价格		Yes	Yes	Active	1.024 kbit	16	64X16	5 V	2/5 V		2 MHz	EEPROM	ALSO OPERATES AT 1MHZ AT 2.7MIN		100	1000000 Write/Erase Cycles	SEPARATE		1	64	64 words	SYNCHRONOUS		SERIAL	5 V	MICROWIRE	15 µA	2 µA	5.5 V	4.5 V	CMOS	INDUSTRIAL	5 ms	SOFTWARE	R-PDSO-G8	Not Qualified	e4	1	85 °C	-40 °C	260		40	8	PLASTIC/EPOXY	TSOP1	TSSOP8,.25	RECTANGULAR	SMALL OUTLINE, THIN PROFILE	YES	Nickel/Palladium/Gold (Ni/Pd/Au)	GULL WING	650 µm	DUAL	1.2 mm	4.4 mm	3 mm	MICROCHIP TECHNOLOGY INC		TSSOP-8		compliant			7 weeks	Atmel AT93C46E-TH-B EEPROM Memory, 1kbit, 1.8 → 5.5 V 8-Pin TSSOP
MX25L25645GZNI-08G Macronix International Co Ltd	查询价格			Yes	Active																																					NOT SPECIFIED		NOT SPECIFIED															MACRONIX INTERNATIONAL CO LTD		WSON-8		unknown			16 weeks
MX25L25645GXDI-08G Macronix International Co Ltd	查询价格			Yes	Active																																	e1				NOT SPECIFIED		NOT SPECIFIED								Tin/Silver/Copper (Sn/Ag/Cu)							MACRONIX INTERNATIONAL CO LTD		BGA-24		unknown			16 weeks
5962-87515073A e2v technologies	查询价格				Active	65.536 kbit	8	8KX8	5 V	5 V	35 ns		UVPROM					COMMON		1	8000	8.192 k	ASYNCHRONOUS	3-STATE	PARALLEL			30 mA	120 µA	5.5 V	4.5 V	CMOS	MILITARY			S-CQCC-N28	Qualified	e0		125 °C	-55 °C		38535Q/M;38534H;883B		28	CERAMIC, METAL-SEALED COFIRED	QCCN	LCC28,.45SQ	SQUARE	CHIP CARRIER	YES	TIN LEAD	NO LEAD	1.27 mm	QUAD				TELEDYNE E2V (UK) LTD	QLCC	CERAMIC, LCC-28	28	compliant	EAR99	8542.32.00.61
TMM27128AD-20 Toshiba America Electronic Components	查询价格			No	Active	131.072 kbit	8	16KX8	5 V	5 V	200 ns							COMMON			16000	16.384 k		3-STATE		12.5 V						MOS	COMMERCIAL			R-XDIP-T28	Not Qualified	e0		70 °C					28	CERAMIC	DIP	DIP28,.6	RECTANGULAR	IN-LINE	NO	Tin/Lead (Sn/Pb)	THROUGH-HOLE	2.54 mm	DUAL				TOSHIBA CORP		DIP, DIP28,.6		unknown
NTE2732A NTE Electronics Inc	查询价格		No	No	Active	32.768 kbit	8	4KX8	5 V	5 V	200 ns		UVPROM					COMMON		1	4000	4.096 k	ASYNCHRONOUS	3-STATE	PARALLEL	21 V			125 µA	5.25 V	4.75 V	NMOS	COMMERCIAL			R-XDIP-T24	Not Qualified	e0		70 °C		NOT SPECIFIED		NOT SPECIFIED	24	UNSPECIFIED	DIP	DIP24,.6	RECTANGULAR	IN-LINE	NO	Tin/Lead (Sn/Pb)	THROUGH-HOLE	2.54 mm	DUAL				NTE ELECTRONICS INC				compliant	EAR99	8542.32.00.61
NTE27C64-15D NTE Electronics Inc	查询价格				Active	65.536 kbit	8	8KX8	5 V		150 ns		UVPROM	LG-MAX; IT ALSO OPERATES AT 6 V NOMINAL SUPPLY VOLTAGE PROGRAMMING MODE						1	8000	8.192 k	ASYNCHRONOUS		PARALLEL					5.5 V	4.5 V	CMOS	COMMERCIAL			R-PDIP-T28				70 °C					28	PLASTIC/EPOXY	DIP		RECTANGULAR	IN-LINE	NO		THROUGH-HOLE	2.54 mm	DUAL	5.72 mm	37.34 mm	15.24 mm	NTE ELECTRONICS INC		DIP-28		unknown
NTE27C1001-10D NTE Electronics Inc	查询价格				Active	1.0486 Mbit	8	128KX8	5 V		100 ns		UVPROM	LG-MAX						1	128000	131.072 k	ASYNCHRONOUS		PARALLEL					5.5 V	4.5 V	CMOS	COMMERCIAL			R-PDIP-T32				70 °C					32	PLASTIC/EPOXY	DIP		RECTANGULAR	IN-LINE	NO		THROUGH-HOLE	2.54 mm	DUAL	5.72 mm	42.04 mm	15.24 mm	NTE ELECTRONICS INC		DIP-32		unknown
MD27C256-25/B Rochester Electronics LLC	查询价格				Active	262.144 kbit	8	32KX8	5 V		250 ns		UVPROM							1	32000	32.768 k	ASYNCHRONOUS		PARALLEL					5.5 V	4.5 V	CMOS	MILITARY			R-CQCC-J32				125 °C	-55 °C				32	CERAMIC, METAL-SEALED COFIRED	QCCJ		RECTANGULAR	CHIP CARRIER	YES		J BEND	1.27 mm	QUAD	4.2418 mm	15.04 mm	11.557 mm	ROCHESTER ELECTRONICS LLC		CERAMIC, JLCC-32		unknown

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