Most Relevant | Technical | Compliance | Operating Conditions | Physical | Dimensions | Other | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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制造商型号 |
Composite Price
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风险等级 | 是否无铅 |
是否Rohs认证
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生命周期 | 内存密度 | 内存宽度 | 组织 |
标称供电电压 (Vsup)
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电源
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最长访问时间 | 最大时钟频率 (fCLK) | 内存集成电路类型 | 其他特性 | 备用内存宽度 | 数据保留时间-最小值 | 耐久性 | I/O 类型 | I2C控制字节 | 功能数量 | 字数代码 | 字数 | 工作模式 | 输出特性 | 并行/串行 |
编程电压
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串行总线类型
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最大待机电流
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最大压摆率
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最大供电电压 (Vsup)
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最小供电电压 (Vsup)
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技术 |
温度等级
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最长写入周期时间 (tWC)
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写保护
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JESD-30 代码 |
认证状态
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JESD-609代码 | 湿度敏感等级 | 最高工作温度 | 最低工作温度 | 峰值回流温度(摄氏度) |
筛选级别
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处于峰值回流温度下的最长时间
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端子数量 | 封装主体材料 | 封装代码 | 封装等效代码 | 封装形状 | 封装形式 |
表面贴装
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端子面层
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端子形式
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端子节距
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端子位置
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座面最大高度
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长度 |
宽度
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IHS 制造商
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零件包装代码
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包装说明
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针数
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是否符合REACH标准
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ECCN代码
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HTS代码
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交付时间
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Samacsys Description
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制造商包装代码
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5962-8606305YA
e2v technologies
|
查询价格 |
|
Active | 262.144 kbit | 8 | 32KX8 | 5 V | 5 V | 150 ns | UVPROM | COMMON | 1 | 32000 | 32.768 k | ASYNCHRONOUS | 3-STATE | PARALLEL | 12.5 V | 300 µA | 50 µA | 5.5 V | 4.5 V | CMOS | MILITARY | R-CQCC-N32 | Qualified | e0 | 125 °C | -55 °C | 38535Q/M;38534H;883B | 32 | CERAMIC, METAL-SEALED COFIRED | QCCN | LCC32,.45X.55 | RECTANGULAR | CHIP CARRIER | YES | TIN LEAD | NO LEAD | 1.27 mm | QUAD | TELEDYNE E2V (UK) LTD | QFJ | CERAMIC, LCC-32 | 32 | compliant | EAR99 | 8542.32.00.61 | |||||||||||||||||||||
AT93C46DY6-YH-E
Microchip Technology Inc
|
查询价格 |
|
Yes | Active | 1.024 kbit | 16 | 64X16 | 5 V | 2 MHz | EEPROM | ALSO OPERATES AT 1MHZ AT 2.7MIN | 8 | 100 | 1000000 Write/Erase Cycles | SEPARATE | 1 | 64 | 64 words | SYNCHRONOUS | SERIAL | 5 V | MICROWIRE | 15 µA | 2 µA | 5.5 V | 4.5 V | CMOS | INDUSTRIAL | 5 ms | SOFTWARE | R-PDSO-G8 | 85 °C | -40 °C | 8 | PLASTIC/EPOXY | HVSON | SOLCC8,.11,20 | RECTANGULAR | SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE, SHRINK PITCH | YES | NO LEAD | 500 µm | DUAL | 600 µm | 3 mm | 2 mm | MICROCHIP TECHNOLOGY INC | UDFN-8 | compliant | EAR99 | 8542.32.00.51 | 8 weeks | EEPROM 1.8-5.5V, 2MHz, Ind Tmp, 8-UDFN | ||||||||||||||||
AT93C46DY6-YH-T
Microchip Technology Inc
|
查询价格 |
|
Yes | Yes | Active | 1.024 kbit | 16 | 64X16 | 5 V | 2/5 V | 2 MHz | EEPROM | ALSO OPERATES AT 1MHZ AT 2.7MIN | 8 | 100 | 1000000 Write/Erase Cycles | SEPARATE | 1 | 64 | 64 words | SYNCHRONOUS | SERIAL | 5 V | MICROWIRE | 15 µA | 2 µA | 5.5 V | 4.5 V | CMOS | INDUSTRIAL | 5 ms | SOFTWARE | R-PDSO-G8 | Not Qualified | e4 | 1 | 85 °C | -40 °C | 260 | 40 | 8 | PLASTIC/EPOXY | HVSON | SOLCC8,.11,20 | RECTANGULAR | SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE, SHRINK PITCH | YES | Nickel/Palladium/Gold (Ni/Pd/Au) | NO LEAD | 500 µm | DUAL | 600 µm | 3 mm | 2 mm | MICROCHIP TECHNOLOGY INC | UDFN-8 | compliant | 8 weeks | |||||||||||
5962-8606306XA
e2v technologies
|
查询价格 |
|
Active | 262.144 kbit | 8 | 32KX8 | 5 V | 5 V | 120 ns | UVPROM | COMMON | 1 | 32000 | 32.768 k | ASYNCHRONOUS | 3-STATE | PARALLEL | 12.5 V | 300 µA | 65 µA | 5.5 V | 4.5 V | CMOS | MILITARY | R-GDIP-T28 | Qualified | e0 | 125 °C | -55 °C | 38535Q/M;38534H;883B | 28 | CERAMIC, GLASS-SEALED | DIP | DIP28,.6 | RECTANGULAR | IN-LINE | NO | TIN LEAD | THROUGH-HOLE | 2.54 mm | DUAL | 5.72 mm | 37.215 mm | 15.24 mm | TELEDYNE E2V (UK) LTD | DIP, DIP28,.6 | compliant | EAR99 | 8542.32.00.61 | ||||||||||||||||||||
CAT24C128YI-GT3
ON Semiconductor
|
查询价格 |
|
Yes | Active | 2/5 V | 100 | 1000000 Write/Erase Cycles | 1010DDDR | I2C | HARDWARE | Not Qualified | e4 | 1 | 260 | 40 | Nickel/Palladium/Gold (Ni/Pd/Au) | ON SEMICONDUCTOR | TSSOP | , | 8 | compliant | EAR99 | 8542.32.00.51 | 8 weeks | 948AL | ||||||||||||||||||||||||||||||||||||||||||||
CAT24C128HU4IGT3
ON Semiconductor
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查询价格 |
|
Yes | Active | 2/5 V | 100 | 1000000 Write/Erase Cycles | 1010DDDR | I2C | HARDWARE | Not Qualified | e4 | 1 | NOT SPECIFIED | NOT SPECIFIED | Nickel/Palladium/Gold (Ni/Pd/Au) | ON SEMICONDUCTOR | , | 8 | compliant | 4 weeks | 128-Kb I2C Serial CMOS EEPROM Memory | 517AZ | ||||||||||||||||||||||||||||||||||||||||||||||
CAT24C128WI-GT3
ON Semiconductor
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查询价格 |
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Yes | Active | 2/5 V | 100 | 1000000 Write/Erase Cycles | 1010DDDR | I2C | HARDWARE | Not Qualified | e4 | 1 | 260 | 40 | Nickel/Palladium/Gold (Ni/Pd/Au) | ON SEMICONDUCTOR | SOIC | , | 8 | compliant | EAR99 | 8542.32.00.51 | EEPROM Serial-I2C 128K 16Kx8 1.8-5V SO8 ... more | 751BD | ||||||||||||||||||||||||||||||||||||||||||||
AT93C46E-PU
Microchip Technology Inc
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查询价格 |
|
Yes | Yes | Active | 1.024 kbit | 16 | 64X16 | 5 V | 2/5 V | 2 MHz | EEPROM | ALSO OPERATES AT 1MHZ AT 2.7MIN | 100 | 1000000 Write/Erase Cycles | SEPARATE | 1 | 64 | 64 words | SYNCHRONOUS | SERIAL | 5 V | 3-WIRE | 15 µA | 2 µA | 5.5 V | 4.5 V | CMOS | INDUSTRIAL | 5 ms | SOFTWARE | R-PDIP-T8 | Not Qualified | e3 | 85 °C | -40 °C | NOT APPLICABLE | NOT APPLICABLE | 8 | PLASTIC/EPOXY | DIP | DIP8,.3 | RECTANGULAR | IN-LINE | NO | Matte Tin (Sn) - annealed | THROUGH-HOLE | 2.54 mm | DUAL | 5.334 mm | 9.271 mm | 7.62 mm | MICROCHIP TECHNOLOGY INC | DIP-8 | compliant | 5 weeks | |||||||||||||
AT93C46DN-SH-B
Microchip Technology Inc
|
查询价格 |
|
Yes | Yes | Active | 1.024 kbit | 16 | 64X16 | 5 V | 2/5 V | 2 MHz | EEPROM | ALSO OPERATES AT 1MHZ AT 2.7MIN | 8 | 100 | 1000000 Write/Erase Cycles | SEPARATE | 1 | 64 | 64 words | SYNCHRONOUS | SERIAL | 5 V | MICROWIRE | 15 µA | 2 µA | 5.5 V | 4.5 V | CMOS | INDUSTRIAL | 5 ms | SOFTWARE | R-PDSO-G8 | Not Qualified | e4 | 1 | 85 °C | -40 °C | 260 | 40 | 8 | PLASTIC/EPOXY | SOP | SOP8,.25 | RECTANGULAR | SMALL OUTLINE | YES | Nickel/Palladium/Gold (Ni/Pd/Au) | GULL WING | 1.27 mm | DUAL | 1.75 mm | 4.9 mm | 3.9 mm | MICROCHIP TECHNOLOGY INC | SOIC-8 | compliant | 6 weeks | AT93C46DN-SH-B, Serial EEPROM Memory 1kbit, Serial-3 Wire, 1.8V, 8-Pin SOIC | ||||||||||
AT93C46D-TH-T
Microchip Technology Inc
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查询价格 |
|
Yes | Yes | Active | 1.024 kbit | 16 | 64X16 | 5 V | 2/5 V | 2 MHz | EEPROM | ALSO OPERATES AT 1MHZ AT 2.7MIN | 8 | 100 | 1000000 Write/Erase Cycles | SEPARATE | 1 | 64 | 64 words | SYNCHRONOUS | SERIAL | 5 V | MICROWIRE | 15 µA | 2 µA | 5.5 V | 4.5 V | CMOS | INDUSTRIAL | 5 ms | SOFTWARE | R-PDSO-G8 | Not Qualified | e4 | 1 | 85 °C | -40 °C | 260 | 40 | 8 | PLASTIC/EPOXY | TSOP1 | TSSOP8,.25 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE | YES | Nickel/Palladium/Gold (Ni/Pd/Au) | GULL WING | 650 µm | DUAL | 1.2 mm | 4.4 mm | 3 mm | MICROCHIP TECHNOLOGY INC | TSSOP-8 | compliant | 6 weeks | EEPROM 8 PDIP 1.8V- 1.8V | ||||||||||
AT93C46EN-SH-T
Microchip Technology Inc
|
查询价格 |
|
Yes | Yes | Active | 1.024 kbit | 16 | 64X16 | 5 V | 2/5 V | 2 MHz | EEPROM | ALSO OPERATES AT 1MHZ AT 2.7MIN | 100 | 1000000 Write/Erase Cycles | SEPARATE | 1 | 64 | 64 words | SYNCHRONOUS | SERIAL | 5 V | MICROWIRE | 15 µA | 2 µA | 5.5 V | 4.5 V | CMOS | INDUSTRIAL | 5 ms | SOFTWARE | R-PDSO-G8 | Not Qualified | e4 | 3 | 85 °C | -40 °C | 260 | 40 | 8 | PLASTIC/EPOXY | SOP | SOP8,.25 | RECTANGULAR | SMALL OUTLINE | YES | Nickel/Palladium/Gold (Ni/Pd/Au) | GULL WING | 1.27 mm | DUAL | 1.75 mm | 4.9 mm | 3.9 mm | MICROCHIP TECHNOLOGY INC | SOIC-8 | compliant | 6 weeks | EEPROM 8 1.8V - 8 1.8V | |||||||||||
AT93C46E-TH-B
Microchip Technology Inc
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查询价格 |
|
Yes | Yes | Active | 1.024 kbit | 16 | 64X16 | 5 V | 2/5 V | 2 MHz | EEPROM | ALSO OPERATES AT 1MHZ AT 2.7MIN | 100 | 1000000 Write/Erase Cycles | SEPARATE | 1 | 64 | 64 words | SYNCHRONOUS | SERIAL | 5 V | MICROWIRE | 15 µA | 2 µA | 5.5 V | 4.5 V | CMOS | INDUSTRIAL | 5 ms | SOFTWARE | R-PDSO-G8 | Not Qualified | e4 | 1 | 85 °C | -40 °C | 260 | 40 | 8 | PLASTIC/EPOXY | TSOP1 | TSSOP8,.25 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE | YES | Nickel/Palladium/Gold (Ni/Pd/Au) | GULL WING | 650 µm | DUAL | 1.2 mm | 4.4 mm | 3 mm | MICROCHIP TECHNOLOGY INC | TSSOP-8 | compliant | 7 weeks | Atmel AT93C46E-TH-B EEPROM Memory, 1kbit, 1.8 → 5.5 V 8-Pin TSSOP | |||||||||||
MX25L25645GZNI-08G
Macronix International Co Ltd
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查询价格 |
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Yes | Active | NOT SPECIFIED | NOT SPECIFIED | MACRONIX INTERNATIONAL CO LTD | WSON-8 | unknown | 16 weeks | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
MX25L25645GXDI-08G
Macronix International Co Ltd
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查询价格 |
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Yes | Active | e1 | NOT SPECIFIED | NOT SPECIFIED | Tin/Silver/Copper (Sn/Ag/Cu) | MACRONIX INTERNATIONAL CO LTD | BGA-24 | unknown | 16 weeks | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
5962-87515073A
e2v technologies
|
查询价格 |
|
Active | 65.536 kbit | 8 | 8KX8 | 5 V | 5 V | 35 ns | UVPROM | COMMON | 1 | 8000 | 8.192 k | ASYNCHRONOUS | 3-STATE | PARALLEL | 30 mA | 120 µA | 5.5 V | 4.5 V | CMOS | MILITARY | S-CQCC-N28 | Qualified | e0 | 125 °C | -55 °C | 38535Q/M;38534H;883B | 28 | CERAMIC, METAL-SEALED COFIRED | QCCN | LCC28,.45SQ | SQUARE | CHIP CARRIER | YES | TIN LEAD | NO LEAD | 1.27 mm | QUAD | TELEDYNE E2V (UK) LTD | QLCC | CERAMIC, LCC-28 | 28 | compliant | EAR99 | 8542.32.00.61 | ||||||||||||||||||||||
TMM27128AD-20
Toshiba America Electronic Components
|
查询价格 |
|
No | Active | 131.072 kbit | 8 | 16KX8 | 5 V | 5 V | 200 ns | COMMON | 16000 | 16.384 k | 3-STATE | 12.5 V | MOS | COMMERCIAL | R-XDIP-T28 | Not Qualified | e0 | 70 °C | 28 | CERAMIC | DIP | DIP28,.6 | RECTANGULAR | IN-LINE | NO | Tin/Lead (Sn/Pb) | THROUGH-HOLE | 2.54 mm | DUAL | TOSHIBA CORP | DIP, DIP28,.6 | unknown | ||||||||||||||||||||||||||||||||||
NTE2732A
NTE Electronics Inc
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查询价格 |
|
No | No | Active | 32.768 kbit | 8 | 4KX8 | 5 V | 5 V | 200 ns | UVPROM | COMMON | 1 | 4000 | 4.096 k | ASYNCHRONOUS | 3-STATE | PARALLEL | 21 V | 125 µA | 5.25 V | 4.75 V | NMOS | COMMERCIAL | R-XDIP-T24 | Not Qualified | e0 | 70 °C | NOT SPECIFIED | NOT SPECIFIED | 24 | UNSPECIFIED | DIP | DIP24,.6 | RECTANGULAR | IN-LINE | NO | Tin/Lead (Sn/Pb) | THROUGH-HOLE | 2.54 mm | DUAL | NTE ELECTRONICS INC | compliant | EAR99 | 8542.32.00.61 | |||||||||||||||||||||||
NTE27C64-15D
NTE Electronics Inc
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查询价格 |
|
Active | 65.536 kbit | 8 | 8KX8 | 5 V | 150 ns | UVPROM | LG-MAX; IT ALSO OPERATES AT 6 V NOMINAL SUPPLY VOLTAGE PROGRAMMING MODE | 1 | 8000 | 8.192 k | ASYNCHRONOUS | PARALLEL | 5.5 V | 4.5 V | CMOS | COMMERCIAL | R-PDIP-T28 | 70 °C | 28 | PLASTIC/EPOXY | DIP | RECTANGULAR | IN-LINE | NO | THROUGH-HOLE | 2.54 mm | DUAL | 5.72 mm | 37.34 mm | 15.24 mm | NTE ELECTRONICS INC | DIP-28 | unknown | |||||||||||||||||||||||||||||||||
NTE27C1001-10D
NTE Electronics Inc
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查询价格 |
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Active | 1.0486 Mbit | 8 | 128KX8 | 5 V | 100 ns | UVPROM | LG-MAX | 1 | 128000 | 131.072 k | ASYNCHRONOUS | PARALLEL | 5.5 V | 4.5 V | CMOS | COMMERCIAL | R-PDIP-T32 | 70 °C | 32 | PLASTIC/EPOXY | DIP | RECTANGULAR | IN-LINE | NO | THROUGH-HOLE | 2.54 mm | DUAL | 5.72 mm | 42.04 mm | 15.24 mm | NTE ELECTRONICS INC | DIP-32 | unknown | |||||||||||||||||||||||||||||||||
MD27C256-25/B
Rochester Electronics LLC
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查询价格 |
|
Active | 262.144 kbit | 8 | 32KX8 | 5 V | 250 ns | UVPROM | 1 | 32000 | 32.768 k | ASYNCHRONOUS | PARALLEL | 5.5 V | 4.5 V | CMOS | MILITARY | R-CQCC-J32 | 125 °C | -55 °C | 32 | CERAMIC, METAL-SEALED COFIRED | QCCJ | RECTANGULAR | CHIP CARRIER | YES | J BEND | 1.27 mm | QUAD | 4.2418 mm | 15.04 mm | 11.557 mm | ROCHESTER ELECTRONICS LLC | CERAMIC, JLCC-32 | unknown |