存储,EPROM_电子元器件选型

						Most Relevant							Technical																							Compliance			Operating Conditions						Physical											Dimensions			Other
制造商型号	Composite Price	风险等级	是否无铅	是否Rohs认证	生命周期	内存密度	内存宽度	组织	标称供电电压 (Vsup)	电源	最长访问时间	最大时钟频率 (fCLK)	内存集成电路类型	其他特性	备用内存宽度	数据保留时间-最小值	耐久性	I/O 类型	I2C控制字节	功能数量	字数代码	字数	工作模式	输出特性	并行/串行	编程电压	串行总线类型	最大待机电流	最大压摆率	最大供电电压 (Vsup)	最小供电电压 (Vsup)	技术	温度等级	最长写入周期时间 (tWC)	写保护	JESD-30 代码	认证状态	JESD-609代码	湿度敏感等级	最高工作温度	最低工作温度	峰值回流温度（摄氏度）	筛选级别	处于峰值回流温度下的最长时间	端子数量	封装主体材料	封装代码	封装等效代码	封装形状	封装形式	表面贴装	端子面层	端子形式	端子节距	端子位置	座面最大高度	长度	宽度	IHS 制造商	零件包装代码	包装说明	针数	是否符合REACH标准	ECCN代码	HTS代码	Source Content uid	交付时间	制造商包装代码	Samacsys Manufacturer
5962-8606305YA e2v technologies	查询价格				Active	262.144 kbit	8	32KX8	5 V	5 V	150 ns		UVPROM					COMMON		1	32000	32.768 k	ASYNCHRONOUS	3-STATE	PARALLEL	12.5 V		300 µA	50 µA	5.5 V	4.5 V	CMOS	MILITARY			R-CQCC-N32	Qualified	e0		125 °C	-55 °C		38535Q/M;38534H;883B		32	CERAMIC, METAL-SEALED COFIRED	QCCN	LCC32,.45X.55	RECTANGULAR	CHIP CARRIER	YES	TIN LEAD	NO LEAD	1.27 mm	QUAD				TELEDYNE E2V (UK) LTD	QFJ	CERAMIC, LCC-32	32	compliant	EAR99	8542.32.00.61
5962-8606304XA e2v technologies	查询价格				Active	262.144 kbit	8	32KX8	5 V	5 V	170 ns		UVPROM					COMMON		1	32000	32.768 k	ASYNCHRONOUS	3-STATE	PARALLEL	12.5 V		300 µA	50 µA	5.5 V	4.5 V	CMOS	MILITARY			R-GDIP-T28	Qualified	e0		125 °C	-55 °C		38535Q/M;38534H;883B		28	CERAMIC, GLASS-SEALED	DIP	DIP28,.6	RECTANGULAR	IN-LINE	NO	TIN LEAD	THROUGH-HOLE	2.54 mm	DUAL				TELEDYNE E2V (UK) LTD	DIP	CERAMIC, DIP-28	28	compliant	EAR99	8542.32.00.61
QP7C271-45WC e2v technologies	查询价格				Active	262.144 kbit	8	32KX8	5 V		45 ns		UVPROM							1	32000	32.768 k	ASYNCHRONOUS		PARALLEL					5.5 V	4.5 V	CMOS	COMMERCIAL			R-GDIP-T28				70 °C					28	CERAMIC, GLASS-SEALED	DIP		RECTANGULAR	IN-LINE	NO		THROUGH-HOLE		DUAL				TELEDYNE E2V (UK) LTD	DIP	0.300 INCH, CERAMIC, WINDOWED, DIP-28	28	compliant	EAR99	8542.32.00.61
AT93C46DY6-YH-E Microchip Technology Inc	查询价格			Yes	Active	1.024 kbit	16	64X16	5 V			2 MHz	EEPROM	ALSO OPERATES AT 1MHZ AT 2.7MIN	8	100	1000000 Write/Erase Cycles	SEPARATE		1	64	64 words	SYNCHRONOUS		SERIAL	5 V	MICROWIRE	15 µA	2 µA	5.5 V	4.5 V	CMOS	INDUSTRIAL	5 ms	SOFTWARE	R-PDSO-G8				85 °C	-40 °C				8	PLASTIC/EPOXY	HVSON	SOLCC8,.11,20	RECTANGULAR	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE, SHRINK PITCH	YES		NO LEAD	500 µm	DUAL	600 µm	3 mm	2 mm	MICROCHIP TECHNOLOGY INC		UDFN-8		compliant	EAR99	8542.32.00.51	AT93C46DY6-YH-E	8 weeks
AT93C46DY6-YH-T Microchip Technology Inc	查询价格		Yes	Yes	Active	1.024 kbit	16	64X16	5 V	2/5 V		2 MHz	EEPROM	ALSO OPERATES AT 1MHZ AT 2.7MIN	8	100	1000000 Write/Erase Cycles	SEPARATE		1	64	64 words	SYNCHRONOUS		SERIAL	5 V	MICROWIRE	15 µA	2 µA	5.5 V	4.5 V	CMOS	INDUSTRIAL	5 ms	SOFTWARE	R-PDSO-G8	Not Qualified	e4	1	85 °C	-40 °C	260		40	8	PLASTIC/EPOXY	HVSON	SOLCC8,.11,20	RECTANGULAR	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE, SHRINK PITCH	YES	Nickel/Palladium/Gold (Ni/Pd/Au)	NO LEAD	500 µm	DUAL	600 µm	3 mm	2 mm	MICROCHIP TECHNOLOGY INC		UDFN-8		compliant	3A991.A.2	8542.31.00.01	AT93C46DY6-YH-T	8 weeks
5962-87515053A e2v technologies	查询价格				Active	65.536 kbit	8	8KX8	5 V	5 V	45 ns		UVPROM	POWER SWITCHED PROM				COMMON		1	8000	8.192 k	ASYNCHRONOUS	3-STATE	PARALLEL			40 mA	120 µA	5.5 V	4.5 V	CMOS	MILITARY			S-CQCC-N28	Qualified	e0		125 °C	-55 °C		38535Q/M;38534H;883B		28	CERAMIC, METAL-SEALED COFIRED	WQCCN	LCC28,.45SQ	SQUARE	CHIP CARRIER, WINDOW	YES	TIN LEAD	NO LEAD	1.27 mm	QUAD	2.8956 mm	11.43 mm	11.43 mm	TELEDYNE E2V (UK) LTD				compliant	EAR99	8542.32.00.61
AT93C46E-PU Microchip Technology Inc	查询价格		Yes	Yes	Active	1.024 kbit	16	64X16	5 V	2/5 V		2 MHz	EEPROM	ALSO OPERATES AT 1MHZ AT 2.7MIN		100	1000000 Write/Erase Cycles	SEPARATE		1	64	64 words	SYNCHRONOUS		SERIAL	5 V	3-WIRE	15 µA	2 µA	5.5 V	4.5 V	CMOS	INDUSTRIAL	5 ms	SOFTWARE	R-PDIP-T8	Not Qualified	e3		85 °C	-40 °C	NOT APPLICABLE		NOT APPLICABLE	8	PLASTIC/EPOXY	DIP	DIP8,.3	RECTANGULAR	IN-LINE	NO	Matte Tin (Sn) - annealed	THROUGH-HOLE	2.54 mm	DUAL	5.334 mm	9.271 mm	7.62 mm	MICROCHIP TECHNOLOGY INC		DIP-8		compliant	3A991.A.2	8542.31.00.01	AT93C46E-PU	5 weeks
CAT24C128HU4IGT3 ON Semiconductor	查询价格		Yes		Active					2/5 V						100	1000000 Write/Erase Cycles		1010DDDR								I2C								HARDWARE		Not Qualified	e4	1			NOT SPECIFIED		NOT SPECIFIED								Nickel/Palladium/Gold (Ni/Pd/Au)							ON SEMICONDUCTOR		,	8	compliant			CAT24C128HU4IGT3	4 weeks	517AZ	ON Semiconductor
CAT24C128WI-GT3 ON Semiconductor	查询价格		Yes		Active					2/5 V						100	1000000 Write/Erase Cycles		1010DDDR								I2C								HARDWARE		Not Qualified	e4	1			260		40								Nickel/Palladium/Gold (Ni/Pd/Au)							ON SEMICONDUCTOR	SOIC	,	8	compliant	EAR99	8542.32.00.51	CAT24C128WI-GT3		751BD	ON Semiconductor
CAT24C128YI-GT3 ON Semiconductor	查询价格		Yes		Active					2/5 V						100	1000000 Write/Erase Cycles		1010DDDR								I2C								HARDWARE		Not Qualified	e4	1			260		40								Nickel/Palladium/Gold (Ni/Pd/Au)							ON SEMICONDUCTOR	TSSOP	,	8	compliant	EAR99	8542.32.00.51	CAT24C128YI-GT3	8 weeks	948AL
AT93C46D-TH-T Microchip Technology Inc	查询价格		Yes	Yes	Active	1.024 kbit	16	64X16	5 V	2/5 V		2 MHz	EEPROM	ALSO OPERATES AT 1MHZ AT 2.7MIN	8	100	1000000 Write/Erase Cycles	SEPARATE		1	64	64 words	SYNCHRONOUS		SERIAL	5 V	MICROWIRE	15 µA	2 µA	5.5 V	4.5 V	CMOS	INDUSTRIAL	5 ms	SOFTWARE	R-PDSO-G8	Not Qualified	e4	1	85 °C	-40 °C	260		40	8	PLASTIC/EPOXY	TSOP1	TSSOP8,.25	RECTANGULAR	SMALL OUTLINE, THIN PROFILE	YES	Nickel/Palladium/Gold (Ni/Pd/Au)	GULL WING	650 µm	DUAL	1.2 mm	4.4 mm	3 mm	MICROCHIP TECHNOLOGY INC		TSSOP-8		compliant	3A991.A.2	8542.31.00.01	AT93C46D-TH-T	6 weeks
AT93C46EN-SH-T Microchip Technology Inc	查询价格		Yes	Yes	Active	1.024 kbit	16	64X16	5 V	2/5 V		2 MHz	EEPROM	ALSO OPERATES AT 1MHZ AT 2.7MIN		100	1000000 Write/Erase Cycles	SEPARATE		1	64	64 words	SYNCHRONOUS		SERIAL	5 V	MICROWIRE	15 µA	2 µA	5.5 V	4.5 V	CMOS	INDUSTRIAL	5 ms	SOFTWARE	R-PDSO-G8	Not Qualified	e4	3	85 °C	-40 °C	260		40	8	PLASTIC/EPOXY	SOP	SOP8,.25	RECTANGULAR	SMALL OUTLINE	YES	Nickel/Palladium/Gold (Ni/Pd/Au)	GULL WING	1.27 mm	DUAL	1.75 mm	4.9 mm	3.9 mm	MICROCHIP TECHNOLOGY INC		SOIC-8		compliant	3A991.A.2	8542.31.00.01	AT93C46EN-SH-T	6 weeks
AT93C46E-TH-B Microchip Technology Inc	查询价格		Yes	Yes	Active	1.024 kbit	16	64X16	5 V	2/5 V		2 MHz	EEPROM	ALSO OPERATES AT 1MHZ AT 2.7MIN		100	1000000 Write/Erase Cycles	SEPARATE		1	64	64 words	SYNCHRONOUS		SERIAL	5 V	MICROWIRE	15 µA	2 µA	5.5 V	4.5 V	CMOS	INDUSTRIAL	5 ms	SOFTWARE	R-PDSO-G8	Not Qualified	e4	1	85 °C	-40 °C	260		40	8	PLASTIC/EPOXY	TSOP1	TSSOP8,.25	RECTANGULAR	SMALL OUTLINE, THIN PROFILE	YES	Nickel/Palladium/Gold (Ni/Pd/Au)	GULL WING	650 µm	DUAL	1.2 mm	4.4 mm	3 mm	MICROCHIP TECHNOLOGY INC		TSSOP-8		compliant	3A991.A.2	8542.31.00.01	AT93C46E-TH-B	7 weeks
AT93C46DN-SH-B Microchip Technology Inc	查询价格		Yes	Yes	Active	1.024 kbit	16	64X16	5 V	2/5 V		2 MHz	EEPROM	ALSO OPERATES AT 1MHZ AT 2.7MIN	8	100	1000000 Write/Erase Cycles	SEPARATE		1	64	64 words	SYNCHRONOUS		SERIAL	5 V	MICROWIRE	15 µA	2 µA	5.5 V	4.5 V	CMOS	INDUSTRIAL	5 ms	SOFTWARE	R-PDSO-G8	Not Qualified	e4	1	85 °C	-40 °C	260		40	8	PLASTIC/EPOXY	SOP	SOP8,.25	RECTANGULAR	SMALL OUTLINE	YES	Nickel/Palladium/Gold (Ni/Pd/Au)	GULL WING	1.27 mm	DUAL	1.75 mm	4.9 mm	3.9 mm	MICROCHIP TECHNOLOGY INC		SOIC-8		compliant	3A991.A.2	8542.31.00.01	AT93C46DN-SH-B	6 weeks
NTE2716 NTE Electronics Inc	查询价格			Yes	Active	16.384 kbit	8	2KX8	5 V	5 V	350 ns		UVPROM					COMMON		1	2000	2.048 k	ASYNCHRONOUS	3-STATE	PARALLEL	25 V			160 µA	5.25 V	4.75 V	NMOS	COMMERCIAL			R-XDIP-T24	Not Qualified			70 °C		NOT SPECIFIED		NOT SPECIFIED	24	UNSPECIFIED	DIP	DIP24,.6	RECTANGULAR	IN-LINE	NO		THROUGH-HOLE	2.54 mm	DUAL				NTE ELECTRONICS INC	DIP	DIP, DIP24,.6	24	unknown	EAR99	8542.32.00.61
5962-8606310UA e2v technologies	查询价格				Active	262.144 kbit	8	32KX8	5 V	5 V	45 ns		UVPROM					COMMON		1	32000	32.768 k	ASYNCHRONOUS	3-STATE	PARALLEL	12.5 V		45 mA	130 µA	5.5 V	4.5 V	CMOS	MILITARY			R-GDIP-T28	Qualified	e0		125 °C	-55 °C		38535Q/M;38534H;883B		28	CERAMIC, GLASS-SEALED	DIP	DIP28,.3	RECTANGULAR	IN-LINE	NO	TIN LEAD	THROUGH-HOLE	2.54 mm	DUAL				TELEDYNE E2V (UK) LTD	DIP	CERAMIC, DIP-28	28	compliant	EAR99	8542.32.00.61
5962-8764801XA e2v technologies	查询价格				Active	524.288 kbit	8	64KX8	5 V	5 V	150 ns		UVPROM					COMMON		1	64000	65.536 k	ASYNCHRONOUS	3-STATE	PARALLEL			325 µA	60 µA	5.5 V	4.5 V	CMOS	MILITARY			R-GDIP-T28	Not Qualified	e0		125 °C	-55 °C		38535Q/M;38534H;883B		28	CERAMIC, GLASS-SEALED	DIP	DIP28,.6	RECTANGULAR	IN-LINE	NO	TIN LEAD	THROUGH-HOLE	2.54 mm	DUAL				TELEDYNE E2V (UK) LTD	DIP	DIP, DIP28,.6	28	compliant	EAR99	8542.32.00.61
5962-87515073A e2v technologies	查询价格				Active	65.536 kbit	8	8KX8	5 V	5 V	35 ns		UVPROM					COMMON		1	8000	8.192 k	ASYNCHRONOUS	3-STATE	PARALLEL			30 mA	120 µA	5.5 V	4.5 V	CMOS	MILITARY			S-CQCC-N28	Qualified	e0		125 °C	-55 °C		38535Q/M;38534H;883B		28	CERAMIC, METAL-SEALED COFIRED	QCCN	LCC28,.45SQ	SQUARE	CHIP CARRIER	YES	TIN LEAD	NO LEAD	1.27 mm	QUAD				TELEDYNE E2V (UK) LTD	QLCC	CERAMIC, LCC-28	28	compliant	EAR99	8542.32.00.61
5962-8680503QA e2v technologies	查询价格				Active	1.0486 Mbit	16	64KX16	5 V	5 V	90 ns		UVPROM					COMMON		1	64000	65.536 k	ASYNCHRONOUS	3-STATE	PARALLEL			120 µA	60 µA	5.5 V	4.5 V	CMOS	MILITARY			R-GDIP-T40	Qualified	e0		125 °C	-55 °C		38535Q/M;38534H;883B		40	CERAMIC, GLASS-SEALED	DIP	DIP40,.6	RECTANGULAR	IN-LINE	NO	TIN LEAD	THROUGH-HOLE	2.54 mm	DUAL				TELEDYNE E2V (UK) LTD	DIP	DIP, DIP40,.6	40	compliant	EAR99	8542.32.00.61
TMM27512AD-20 Toshiba America Electronic Components	查询价格		No	No	Active	524.288 kbit	8	64KX8	5 V	5 V	200 ns		UVPROM					COMMON		1	64000	65.536 k	ASYNCHRONOUS	3-STATE	PARALLEL				120 µA	5.25 V	4.75 V	NMOS	COMMERCIAL			R-GDIP-T28	Not Qualified	e0		70 °C		240		NOT SPECIFIED	28	CERAMIC, GLASS-SEALED	WDIP	DIP28,.6	RECTANGULAR	IN-LINE, WINDOW	NO	Tin/Lead (Sn/Pb)	THROUGH-HOLE	2.54 mm	DUAL	5.2 mm		15.24 mm	TOSHIBA CORP	DIP	WDIP, DIP28,.6	28	unknown	EAR99	8542.32.00.61	TMM27512AD-20

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