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SRAM: 538,147 个筛选结果
最长访问时间 (50)
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最大时钟频率 (fCLK) (50)
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制造商 (50)
内存密度 (50)
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内存宽度 (36)
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组织 (50)
电源 (50)
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标称供电电压 (Vsup) (21)
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Most Relevant Technical Compliance Operating Conditions Physical Dimensions Other
制造商型号 Composite Price
风险等级 是否无铅 是否Rohs认证 生命周期 内存密度 内存宽度 组织 标称供电电压 (Vsup) 电源 最长访问时间 最大时钟频率 (fCLK) 内存集成电路类型 其他特性 I/O 类型 功能数量 字数代码 字数 工作模式 输出特性 并行/串行 最大待机电流 最小待机电流 最大压摆率 最大供电电压 (Vsup) 最小供电电压 (Vsup) 技术 温度等级 JESD-30 代码 认证状态 JESD-609代码 湿度敏感等级 最高工作温度 最低工作温度 峰值回流温度(摄氏度) 筛选级别 处于峰值回流温度下的最长时间 端子数量 封装主体材料 封装代码 封装等效代码 封装形状 封装形式 表面贴装 端子面层 端子形式 端子节距 端子位置 座面最大高度 长度 宽度 零件包装代码
包装说明
针数
制造商包装代码
是否符合REACH标准
ECCN代码
HTS代码
交付时间
71256L20YG
Integrated Device Technology Inc
查询价格
Yes Yes Active 262.144 kbit 8 32KX8 5 V 5 V 20 ns STANDARD SRAM COMMON 1 32000 32.768 k ASYNCHRONOUS 3-STATE PARALLEL 120 µA 2 V 135 µA 5.5 V 4.5 V CMOS COMMERCIAL R-PDSO-J28 Not Qualified e3 3 70 °C 260 NOT SPECIFIED 28 PLASTIC/EPOXY SOJ SOJ28,.34 RECTANGULAR SMALL OUTLINE YES Matte Tin (Sn) - annealed J BEND 1.27 mm DUAL 3.556 mm 17.9324 mm 7.5184 mm SOJ SOJ, SOJ28,.34 28 PJG28 compliant 3A991.B.2.B 8542.32.00.41
7164S20YG8
Integrated Device Technology Inc
查询价格
Yes Yes Active 65.536 kbit 8 8KX8 5 V 5 V 19 ns STANDARD SRAM COMMON 1 8000 8.192 k ASYNCHRONOUS 3-STATE PARALLEL 15 mA 4.5 V 170 µA 5.5 V 4.5 V CMOS COMMERCIAL R-PDSO-J28 Not Qualified e3 3 70 °C 260 NOT SPECIFIED 28 PLASTIC/EPOXY SOJ SOJ28,.34 RECTANGULAR SMALL OUTLINE YES Matte Tin (Sn) - annealed J BEND 1.27 mm DUAL 3.556 mm 17.9324 mm 7.5184 mm SOJ SOJ, SOJ28,.34 28 PJG28 compliant EAR99 8542.32.00.41
71V016SA10PHG
Integrated Device Technology Inc
查询价格
Yes Yes Active 1.0486 Mbit 16 64KX16 3.3 V 3.3 V 10 ns STANDARD SRAM ALSO OPERATES WITH 3V TO 3.6 V SUPPLY COMMON 1 64000 65.536 k ASYNCHRONOUS 3-STATE PARALLEL 10 mA 3.15 V 160 µA 3.6 V 3.15 V CMOS COMMERCIAL R-PDSO-G44 Not Qualified e3 3 70 °C 260 30 44 PLASTIC/EPOXY SOP TSOP44,.46,32 RECTANGULAR SMALL OUTLINE YES Matte Tin (Sn) - annealed GULL WING 800 µm DUAL 1.2 mm 18.41 mm 10.16 mm TSOP SOP, TSOP44,.46,32 44 PHG44 compliant 3A991.B.2.A 8542.32.00.41
71256SA20YG8
Integrated Device Technology Inc
查询价格
Yes Yes Active 262.144 kbit 8 32KX8 5 V 5 V 20 ns STANDARD SRAM COMMON 1 32000 32.768 k ASYNCHRONOUS 3-STATE PARALLEL 15 mA 4.5 V 145 µA 5.5 V 4.5 V CMOS COMMERCIAL R-PDSO-J28 Not Qualified e3 3 70 °C 260 NOT SPECIFIED 28 PLASTIC/EPOXY SOJ SOJ28,.34 RECTANGULAR SMALL OUTLINE YES Matte Tin (Sn) - annealed J BEND 1.27 mm DUAL 3.556 mm 17.9324 mm 7.5184 mm SOJ SOJ, SOJ28,.34 28 PJG28 compliant EAR99 8542.32.00.41
AS7C34098A-10TIN
Alliance Memory Inc
查询价格
Yes Yes Active 4.1943 Mbit 16 256KX16 3.3 V 3.3 V 10 ns STANDARD SRAM COMMON 1 256000 262.144 k ASYNCHRONOUS 3-STATE PARALLEL 8 mA 3 V 180 µA 3.6 V 3 V CMOS INDUSTRIAL R-PDSO-G44 Not Qualified e3/e6 3 85 °C -40 °C 260 40 44 PLASTIC/EPOXY TSOP2 TSOP44,.46,32 RECTANGULAR SMALL OUTLINE, THIN PROFILE YES MATTE TIN/TIN BISMUTH GULL WING 800 µm DUAL 1.2 mm 18.415 mm 10.16 mm TSOP2 TSOP2, TSOP44,.46,32 44 compliant 3A991.B.2.A 8542.32.00.41 10 weeks
AS7C34098A-10TCN
Alliance Memory Inc
查询价格
Yes Yes Active 4.1943 Mbit 16 256KX16 3.3 V 3.3 V 10 ns STANDARD SRAM COMMON 1 256000 262.144 k ASYNCHRONOUS 3-STATE PARALLEL 8 mA 3 V 170 µA 3.6 V 3 V CMOS COMMERCIAL R-PDSO-G44 Not Qualified e3 3 70 °C 260 30 44 PLASTIC/EPOXY TSOP2 TSOP44,.46,32 RECTANGULAR SMALL OUTLINE, THIN PROFILE YES Tin (Sn) GULL WING 800 µm DUAL 1.2 mm 18.415 mm 10.16 mm TSOP2 TSOP2, TSOP44,.46,32 44 compliant 3A991.B.2.A 8542.32.00.41 10 weeks
71V424S10YG8
Integrated Device Technology Inc
查询价格
Yes Yes Active 4.1943 Mbit 8 512KX8 3.3 V 3.3 V 10 ns STANDARD SRAM COMMON 1 512000 524.288 k ASYNCHRONOUS 3-STATE PARALLEL 20 mA 3 V 180 µA 3.6 V 3 V CMOS COMMERCIAL R-PDSO-J36 Not Qualified e3 3 70 °C 260 NOT SPECIFIED 36 PLASTIC/EPOXY SOJ SOJ36,.44 RECTANGULAR SMALL OUTLINE YES Matte Tin (Sn) - annealed J BEND 1.27 mm DUAL 3.683 mm 23.495 mm 10.16 mm SOJ SOJ, SOJ36,.44 36 PBG36 compliant 3A991.B.2.A 8542.32.00.41
CY7C1021CV33-10ZSXA
Cypress Semiconductor
查询价格
Yes Active 1.0486 Mbit 16 64KX16 3.3 V 3.3 V 10 ns STANDARD SRAM COMMON 1 64000 65.536 k ASYNCHRONOUS 3-STATE PARALLEL 5 mA 3 V 90 µA 3.63 V 2.97 V CMOS INDUSTRIAL R-PDSO-G44 Not Qualified e4 3 85 °C -40 °C 260 AEC-Q100 30 44 PLASTIC/EPOXY TSOP2 TSOP44,.46,32 RECTANGULAR SMALL OUTLINE, THIN PROFILE YES Nickel/Palladium/Gold (Ni/Pd/Au) GULL WING 800 µm DUAL 1.194 mm 18.415 mm 10.16 mm TSOP2 TSOP2, TSOP44,.46,32 44 compliant 3A991.B.2.B 8542.32.00.41
IS61LV25616AL-10TLI
Integrated Silicon Solution Inc
查询价格
Yes Yes Active 4.1943 Mbit 16 256KX16 3.3 V 3.3 V 10 ns STANDARD SRAM COMMON 1 256000 262.144 k ASYNCHRONOUS 3-STATE PARALLEL 15 mA 2 V 110 µA 3.63 V 3.135 V CMOS INDUSTRIAL R-PDSO-G44 Not Qualified e3 3 85 °C -40 °C 260 40 44 PLASTIC/EPOXY TSOP2 TSOP44,.46,32 RECTANGULAR SMALL OUTLINE, THIN PROFILE YES Matte Tin (Sn) - annealed GULL WING 800 µm DUAL 1.2 mm 18.415 mm 10.16 mm TSOP2 TSOP2, TSOP44,.46,32 44 compliant 3A991.B.2.A 8542.32.00.41 8 weeks
GS8322Z18AGD-150IV
GSI Technology
查询价格
Yes Active 37.7487 Mbit 18 2MX18 1.8 V 1.8/2.5 V 7.5 ns 150 MHz ZBT SRAM ALSO OPERATED WITH 2.5V SUPPLY; PIPELINE/FLOW THROUGH ARCHITECTURE COMMON 1 2000000 2.0972 M SYNCHRONOUS 3-STATE PARALLEL 40 mA 1.7 V 150 µA 2 V 1.7 V CMOS INDUSTRIAL R-PBGA-B165 Not Qualified 3 85 °C -40 °C NOT SPECIFIED NOT SPECIFIED 165 PLASTIC/EPOXY LBGA BGA165,11X15,40 RECTANGULAR GRID ARRAY, LOW PROFILE YES BALL 1 mm BOTTOM 1.4 mm 15 mm 13 mm BGA LBGA, BGA165,11X15,40 165 compliant 3A991.B.2.B 8542.32.00.41 10 weeks
IS61LV25616AL-10TL
Integrated Silicon Solution Inc
查询价格
Yes Yes Active 4.1943 Mbit 16 256KX16 3.3 V 3.3 V 10 ns STANDARD SRAM COMMON 1 256000 262.144 k ASYNCHRONOUS 3-STATE PARALLEL 10 mA 2 V 100 µA 3.63 V 3.135 V CMOS COMMERCIAL R-PDSO-G44 Not Qualified e3 3 70 °C 260 40 44 PLASTIC/EPOXY TSOP2 TSOP44,.46,32 RECTANGULAR SMALL OUTLINE, THIN PROFILE YES Matte Tin (Sn) - annealed GULL WING 800 µm DUAL 1.2 mm 18.415 mm 10.16 mm TSOP2 TSOP2, TSOP44,.46,32 44 compliant 3A991.B.2.A 8542.32.00.41 8 weeks
71V424L15YGI8
Integrated Device Technology Inc
查询价格
Yes Yes Active 4.1943 Mbit 8 512KX8 3.3 V 3.3 V 15 ns STANDARD SRAM COMMON 1 512000 524.288 k ASYNCHRONOUS 3-STATE PARALLEL 10 mA 3 V 145 µA 3.6 V 3 V CMOS INDUSTRIAL R-PDSO-J36 Not Qualified e3 3 85 °C -40 °C 260 NOT SPECIFIED 36 PLASTIC/EPOXY SOJ SOJ36,.44 RECTANGULAR SMALL OUTLINE YES Matte Tin (Sn) - annealed J BEND 1.27 mm DUAL 3.683 mm 23.495 mm 10.16 mm SOJ SOJ, SOJ36,.44 36 PBG36 compliant 3A991.B.2.A 8542.32.00.41
IS61LV25616AL-10TLI-TR
Integrated Silicon Solution Inc
查询价格
Yes Yes Active 4.1943 Mbit 16 256KX16 3.3 V 3.3 V 10 ns STANDARD SRAM COMMON 1 256000 262.144 k ASYNCHRONOUS 3-STATE PARALLEL 15 mA 2 V 100 µA 3.63 V 3.135 V CMOS INDUSTRIAL R-PDSO-G44 Not Qualified e3 3 85 °C -40 °C 260 40 44 PLASTIC/EPOXY TSOP2 TSOP44,.46,32 RECTANGULAR