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IGBT: 25,716 个筛选结果
最大集电极电流 (IC) (50)
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集电极-发射极最大电压 (50)
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配置 (50)
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门极发射器阈值电压最大值 (50)
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制造商 (50)
元件数量 (10)
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端子数量 (50)
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极性/信道类型 (2)
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表面贴装 (2)
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Most Relevant Technical Compliance Operating Conditions Physical Dimensions Other
制造商型号 Composite Price
风险等级 是否无铅 生命周期 集电极-发射极最大电压 门极发射器阈值电压最大值 最大集电极电流 (IC) 极性/信道类型 表面贴装 配置 端子数量 元件数量 其他特性 最大降落时间(tf) 门极-发射极最大电压 最大功率耗散 (Abs) 最大上升时间(tr) 晶体管应用 晶体管元件材料 最大关闭时间(toff) 标称断开时间 (toff) 最大开启时间(吨) 标称接通时间 (ton) VCEsat-Max JEDEC-95代码 JESD-30 代码 JESD-609代码 认证状态 参考标准 湿度敏感等级 最高工作温度 最低工作温度 峰值回流温度(摄氏度) 处于峰值回流温度下的最长时间 外壳连接 封装主体材料 封装形状 封装形式 端子面层 端子形式 端子位置 IHS 制造商
包装说明
制造商包装代码
是否符合REACH标准
交付时间
Samacsys Description
ECCN代码
HTS代码
零件包装代码
针数
FGB40T65SPD-F085
ON Semiconductor
查询价格
Yes Active 650 V 80 A N-CHANNEL YES SINGLE WITH BUILT-IN DIODE 2 1 POWER CONTROL SILICON 51 ns 49 ns TO-263AB R-PSSO-G2 e3 AEC-Q101 1 -55 °C 260 30 COLLECTOR PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE Tin (Sn) GULL WING SINGLE ON SEMICONDUCTOR SMALL OUTLINE, R-PSSO-G2 418AJ not_compliant 4 weeks IGBT Transistors Trench IGBT
HGT1S10N120BNST
ON Semiconductor
查询价格
Yes Active 1.2 kV 35 A N-CHANNEL YES SINGLE 2 1 LOW CONDUCTION LOSS 200 ns 20 V 298 W 15 ns MOTOR CONTROL SILICON 450 ns 330 ns 40 ns 32 ns 4.2 V TO-263AB R-PSSO-G2 e3 Not Qualified 1 150 °C -55 °C NOT SPECIFIED NOT SPECIFIED COLLECTOR PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE Tin (Sn) GULL WING SINGLE ON SEMICONDUCTOR SMALL OUTLINE, R-PSSO-G2 418AJ not_compliant 20 weeks 1200V, NPT IGBT EAR99 8541.29.00.95
FGD3040G2-F085
ON Semiconductor
查询价格
Yes Active 390 V 2.2 V 23.2 A N-CHANNEL YES SINGLE WITH BUILT-IN DIODE AND RESISTOR 2 1 15 µs 14 V 150 W 7 µs AUTOMOTIVE IGNITION SILICON TO-252 R-PSSO-G2 e3 1 175 °C NOT SPECIFIED NOT SPECIFIED COLLECTOR PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE Tin (Sn) GULL WING SINGLE ON SEMICONDUCTOR SMALL OUTLINE, R-PSSO-G2 369AS not_compliant
FGH40N60SMDF
ON Semiconductor
查询价格
Yes Active 600 V 6 V 80 A N-CHANNEL NO SINGLE WITH BUILT-IN DIODE 3 1 17 ns 20 V 349 W 28 ns POWER CONTROL SILICON 132 ns 37 ns TO-247AB R-PSFM-T3 e3 Not Qualified 175 °C NOT SPECIFIED NOT SPECIFIED COLLECTOR PLASTIC/EPOXY RECTANGULAR FLANGE MOUNT Tin (Sn) THROUGH-HOLE SINGLE ON SEMICONDUCTOR FLANGE MOUNT, R-PSFM-T3 340CK not_compliant 1 week Transistor, IGBT N Channel 600V TO247 EAR99 8541.29.00.95
FGD3245G2-F085
ON Semiconductor
查询价格
Yes Active 440 V 2.2 V 23 A N-CHANNEL YES SINGLE WITH BUILT-IN DIODE AND RESISTOR 2 1 15 µs 12 V 150 W 7 µs AUTOMOTIVE IGNITION SILICON 30 µs 8.1 µs 11 µs 3.5 µs 1.25 V TO-252AA R-PSSO-G2 e3 AEC-Q101 1 175 °C -40 °C 260 NOT SPECIFIED COLLECTOR PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE Tin (Sn) GULL WING SINGLE ON SEMICONDUCTOR SMALL OUTLINE, R-PSSO-G2 369AS not_compliant IGBT Transistors EcoSPARK2-450V Ignition IGBT
ISL9V5036P3-F085
ON Semiconductor
查询价格
Yes Active 360 V 2.2 V 46 A N-CHANNEL NO SINGLE WITH BUILT-IN DIODE AND RESISTOR 3 1 LOGIC LEVEL COMPATIBLE 15 µs 12 V 250 W 7 µs POWER CONTROL SILICON 13.6 µs 2.8 µs TO-220AB R-PSFM-T3 e3 175 °C NOT SPECIFIED NOT SPECIFIED COLLECTOR PLASTIC/EPOXY RECTANGULAR FLANGE MOUNT Tin (Sn) THROUGH-HOLE SINGLE ON SEMICONDUCTOR FLANGE MOUNT, R-PSFM-T3 340AT compliant Motor / Motion / Ignition Controllers & Drivers N-Ch 360V 46A 0.8ohm
FGB3056-F085
ON Semiconductor
查询价格
Yes Active 560 V 2.2 V 29 A N-CHANNEL YES SINGLE WITH BUILT-IN DIODE 2 1 1.8 µs 200 W 2.4 µs AUTOMOTIVE IGNITION SILICON 10 µs 6.2 µs 3.7 µs 1.56 µs 1.55 V TO-263AB R-PSSO-G2 e3 1 175 °C -40 °C NOT SPECIFIED NOT SPECIFIED COLLECTOR PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE Tin (Sn) GULL WING SINGLE ON SEMICONDUCTOR SMALL OUTLINE, R-PSSO-G2 418AJ not_compliant
FGH40T65SH-F155
ON Semiconductor
查询价格
Yes Active 650 V 7.5 V 80 A N-CHANNEL NO SINGLE WITH BUILT-IN DIODE 3 1 LOW CONDUCTION LOSS 20 V 268 W POWER CONTROL SILICON 85.6 ns 51.2 ns 2.1 V TO-247 R-PSFM-T3 175 °C -55 °C NOT SPECIFIED NOT SPECIFIED PLASTIC/EPOXY RECTANGULAR FLANGE MOUNT THROUGH-HOLE SINGLE ON SEMICONDUCTOR FLANGE MOUNT, R-PSFM-T3 340CH compliant
STGB20NB41LZT4
STMicroelectronics
查询价格
Active 382 V 2.4 V 40 A N-CHANNEL YES SINGLE WITH BUILT-IN DIODE AND RESISTOR 2 1 200 W AUTOMOTIVE IGNITION SILICON 16.1 µs 1.22 µs TO-263AB R-PSSO-G2 e3 Not Qualified 1 175 °C 245 30 COLLECTOR PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE Matte Tin (Sn) - annealed GULL WING SINGLE STMICROELECTRONICS SMALL OUTLINE, R-PSSO-G2 not_compliant 8 weeks EAR99 D2PAK 3
FGB20N60SFD-F085
ON Semiconductor
查询价格
Yes Active 600 V 6.5 V 40 A N-CHANNEL YES SINGLE WITH BUILT-IN DIODE 2 1 43 ns 20 V 208 W 21 ns POWER CONTROL SILICON 123 ns 28 ns TO-263AB R-PSSO-G2 e3 AEC-Q101 1 150 °C NOT SPECIFIED NOT SPECIFIED COLLECTOR PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE Tin (Sn) GULL WING SINGLE ON SEMICONDUCTOR SMALL OUTLINE, R-PSSO-G2 418AJ not_compliant IGBT Transistors 600V 20A FSP IGBT
FGD3440G2-F085
ON Semiconductor
查询价格
Yes Active 450 V 2.2 V 26.9 A N-CHANNEL YES 15 µs 14 V 166 W 7 µs 1 175 °C NOT SPECIFIED NOT SPECIFIED ON SEMICONDUCTOR 369AS not_compliant IGBT, Fairchild, FGD3440G2_F085
FGB3245G2-F085
ON Semiconductor
查询价格
Yes Active 440 V 2.2 V 23 A N-CHANNEL YES SINGLE WITH BUILT-IN DIODE AND RESISTOR 2 1 15 µs 12 V 150 W 7 µs AUTOMOTIVE IGNITION SILICON 30 µs 8.1 µs 11 µs 3.5 µs 1.25 V TO-263AB R-PSSO-G2 e3 AEC-Q101 1 175 °C -40 °C NOT SPECIFIED NOT SPECIFIED COLLECTOR PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE Tin (Sn) GULL WING SINGLE ON SEMICONDUCTOR SMALL OUTLINE, R-PSSO-G2 418AJ not_compliant
FGB3440G2-F085
ON Semiconductor
查询价格
Yes Active 390 V 2.2 V 26.9 A N-CHANNEL YES 15 µs 12 V 166 W 7 µs 1 175 °C 260 NOT SPECIFIED ON SEMICONDUCTOR 418AJ not_compliant
FGD3325G2-F085
ON Semiconductor
查询价格
Yes Active 240 V 2.2 V 41 A N-CHANNEL YES SINGLE WITH BUILT-IN TVS DIODE AND RESISTOR 2 1 15 µs 10 V 150 W 7 µs AUTOMOTIVE IGNITION SILICON 30 µs 7.3 µs 11 µs 2 µs 1.25 V TO-252AA R-PSSO-G2 e3 AEC-Q101 1 175 °C -55 °C 260 NOT SPECIFIED COLLECTOR PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE Tin (Sn) GULL WING SINGLE ON SEMICONDUCTOR SMALL OUTLINE, R-PSSO-G2 369AS not_compliant
FGP3040G2-F085
ON Semiconductor
查询价格
Yes Active 390 V 2.2 V 41 A N-CHANNEL NO 15 µs 12 V 150 W 7 µs e3 175 °C NOT SPECIFIED NOT SPECIFIED Tin (Sn) ON SEMICONDUCTOR , 340AT compliant
ISL9V5045S3ST-F085
ON Semiconductor
查询价格
Yes Active 480 V 2.2 V 51 A N-CHANNEL YES SINGLE WITH BUILT-IN DIODE 2 1 LOGIC LEVEL COMPATIBLE 15 µs 12 V 300 W 7 µs AUTOMOTIVE IGNITION SILICON 13.6 µs 2.8 µs TO-263AB R-PSSO-G2 e3 AEC-Q101 1 175 °C NOT SPECIFIED NOT SPECIFIED COLLECTOR PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE Tin (Sn) GULL WING SINGLE ON SEMICONDUCTOR SMALL OUTLINE, R-PSSO-G2 418AJ not_compliant
STGB7NC60HDT4
STMicroelectronics
查询价格
Active 600 V 5.75 V 25 A N-CHANNEL YES SINGLE WITH BUILT-IN DIODE 2 1 20 V 80 W POWER CONTROL SILICON 221 ns 25.5 ns TO-263AB R-PSSO-G2 e3 Not Qualified 1 150 °C 245 30 PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE Matte Tin (Sn) - annealed GULL WING SINGLE STMICROELECTRONICS SMALL OUTLINE, R-PSSO-G2 not_compliant 8 weeks IGBT Transistors N-Ch 600 Volt 14 Amp EAR99 D2PAK 4
STGW20V60DF
STMicroelectronics
查询价格
Active 600 V 40 A N-CHANNEL NO 20 V 167 W 175 °C NOT SPECIFIED NOT SPECIFIED STMICROELECTRONICS compliant 20 weeks NULL EAR99
STGD7NC60HT4
STMicroelectronics
查询价格
Active 600 V 5.75 V 25 A N-CHANNEL YES SINGLE 2 1 20 V 70 W POWER CONTROL SILICON 221 ns 25.5 ns TO-252AA R-PSSO-G2 e3 Not Qualified 1 150 °C 260 30 PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE Matte Tin (Sn) - annealed GULL WING SINGLE STMICROELECTRONICS SMALL OUTLINE, R-PSSO-G2 not_compliant 8 weeks EAR99 TO-252AA 3
STGWT60H65FB
STMicroelectronics
查询价格
Active NOT SPECIFIED NOT SPECIFIED STMICROELECTRONICS compliant 32 weeks EAR99
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