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射频小信号场效应晶体管: 9,489 个筛选结果
配置 (12)
最小漏源击穿电压 (41)
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最大漏极电流 (Abs) (ID) (50)
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最大漏极电流 (ID) (50)
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最高频带 (9)
制造商 (50)
元件数量 (3)
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端子数量 (17)
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极性/信道类型 (2)
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最小功率增益 (Gp) (50)
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表面贴装 (2)
Most Relevant Technical Compliance Operating Conditions Physical Dimensions Other
制造商型号 Composite Price
风险等级 是否无铅 是否Rohs认证 生命周期 极性/信道类型 表面贴装 配置 端子数量 最小漏源击穿电压 最高频带 元件数量 最大漏极电流 (Abs) (ID) 最小功率增益 (Gp) 最大漏极电流 (ID) 其他特性 最大反馈电容 (Crss) FET 技术 工作模式 功耗环境最大值 最大功率耗散 (Abs) 晶体管应用 晶体管元件材料 JEDEC-95代码 JESD-30 代码 JESD-609代码 认证状态 湿度敏感等级 最高工作温度 最低工作温度 峰值回流温度(摄氏度) 处于峰值回流温度下的最长时间 外壳连接 封装主体材料 封装形状 封装形式 端子面层 端子形式 端子位置 IHS 制造商
包装说明
针数
制造商包装代码
是否符合REACH标准
ECCN代码
交付时间
Samacsys Description
零件包装代码
HTS代码
MMBFJ310LT3G
ON Semiconductor
查询价格
Yes Active N-CHANNEL YES SINGLE 3 25 V ULTRA HIGH FREQUENCY BAND 1 2.5 pF JUNCTION DEPLETION MODE 225 mW AMPLIFIER SILICON TO-236AB R-PDSO-G3 e3 Not Qualified 1 150 °C 260 40 PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE Tin (Sn) GULL WING DUAL ON SEMICONDUCTOR SMALL OUTLINE, R-PDSO-G3 3 318-08 compliant EAR99 40 weeks JFET - VHF/UHF Amplifier N-Ch 25V SOT23 ... more
MMBFJ310LT1G
ON Semiconductor
查询价格
Yes Active N-CHANNEL YES SINGLE 3 25 V ULTRA HIGH FREQUENCY BAND 1 2.5 pF JUNCTION DEPLETION MODE 225 mW AMPLIFIER SILICON TO-236 R-PDSO-G3 e3 Not Qualified 1 150 °C 260 40 PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE Tin (Sn) GULL WING DUAL ON SEMICONDUCTOR SMALL OUTLINE, R-PDSO-G3 3 318-08 compliant EAR99 8 weeks Transistor JFET N-Channel 25V SOT23 ON S... more SOT-23
J211-D74Z
ON Semiconductor
查询价格
Yes Active N-CHANNEL NO SINGLE 3 VERY HIGH FREQUENCY BAND 1 JUNCTION DEPLETION MODE 350 mW AMPLIFIER SILICON TO-92 O-PBCY-T3 e3 Not Qualified 150 °C PLASTIC/EPOXY ROUND CYLINDRICAL Matte Tin (Sn) - annealed THROUGH-HOLE BOTTOM ON SEMICONDUCTOR CYLINDRICAL, O-PBCY-T3 135AR compliant
MMBFJ309LT1G
ON Semiconductor
查询价格
Yes Active N-CHANNEL YES SINGLE 3 25 V ULTRA HIGH FREQUENCY BAND 1 2.5 pF JUNCTION DEPLETION MODE 225 mW AMPLIFIER SILICON TO-236 R-PDSO-G3 e3 Not Qualified 1 150 °C 260 40 PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE Tin (Sn) GULL WING DUAL ON SEMICONDUCTOR SMALL OUTLINE, R-PDSO-G3 3 318-08 compliant EAR99 1 week ON SEMICONDUCTOR - MMBFJ309LT1G - TRANSISTOR, JFET, N, 25V, SOT-23 SOT-23
MMBF4416
ON Semiconductor
查询价格
Yes Active N-CHANNEL YES SINGLE 3 VERY HIGH FREQUENCY BAND 1 18 dB 0.9 pF JUNCTION DEPLETION MODE 225 mW AMPLIFIER SILICON R-PDSO-G3 e3 Not Qualified 1 150 °C NOT SPECIFIED NOT SPECIFIED PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE Tin (Sn) GULL WING DUAL ON SEMICONDUCTOR SMALL OUTLINE, R-PDSO-G3 318-08 compliant EAR99 43 weeks 1 day Transistor, Fairchild, MMBF4416 Fairchil... more 8541.21.00.95
MMBFU310LT1G
ON Semiconductor
查询价格
Yes Active N-CHANNEL YES SINGLE 3 25 V ULTRA HIGH FREQUENCY BAND 1 2.5 pF JUNCTION DEPLETION MODE 225 mW AMPLIFIER SILICON TO-236AB R-PDSO-G3 e3 Not Qualified 1 150 °C 260 40 PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE Tin (Sn) GULL WING DUAL ON SEMICONDUCTOR SMALL OUTLINE, R-PDSO-G3 3 318-08 compliant EAR99 1 week SOT-23
MMBF5484
ON Semiconductor
查询价格
Yes Active N-CHANNEL YES SINGLE 3 1 1 pF JUNCTION DEPLETION MODE 225 mW 225 mW AMPLIFIER SILICON TO-236AB R-PDSO-G3 e3 Not Qualified 1 150 °C -55 °C NOT SPECIFIED NOT SPECIFIED PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE Tin (Sn) GULL WING DUAL ON SEMICONDUCTOR SMALL OUTLINE, R-PDSO-G3 318-08 compliant EAR99 1 week FAIRCHILD SEMICONDUCTOR - MMBF5484. - JFET, N CH, 25V, 0.01A, SOT23 8541.21.00.95
MMBF5485
ON Semiconductor
查询价格
Yes Active N-CHANNEL YES SINGLE 3 ULTRA HIGH FREQUENCY BAND 1 1 pF METAL-OXIDE SEMICONDUCTOR DEPLETION MODE 350 mW AMPLIFIER SILICON R-PDSO-G3 e3 Not Qualified 1 150 °C NOT SPECIFIED NOT SPECIFIED PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE Tin (Sn) GULL WING DUAL ON SEMICONDUCTOR SMALL OUTLINE, R-PDSO-G3 318-08 compliant EAR99 43 weeks 1 day 8541.21.00.95
CPH6904-TL-E
ON Semiconductor
查询价格
Yes Active N-CHANNEL YES JUNCTION 700 mW e6 1 150 °C Tin/Bismuth (Sn/Bi) ON SEMICONDUCTOR 6 318BD compliant EAR99 7 weeks NULL
MMBF5486
ON Semiconductor
查询价格
Yes Active N-CHANNEL YES SINGLE 3 ULTRA HIGH FREQUENCY BAND 1 1 pF METAL-OXIDE SEMICONDUCTOR DEPLETION MODE 225 mW AMPLIFIER SILICON R-PDSO-G3 e3 Not Qualified 1 150 °C NOT SPECIFIED NOT SPECIFIED PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE Tin (Sn) GULL WING DUAL ON SEMICONDUCTOR SMALL OUTLINE, R-PDSO-G3 318-08 compliant EAR99 43 weeks 1 day ON Semiconductor MMBF5486 N-Channel JFET, 15 V, Idss 8 → 20mA, 3-Pin SOT-23 8541.21.00.95
MMBFJ211
ON Semiconductor
查询价格
Yes Active N-CHANNEL YES SINGLE 3 VERY HIGH FREQUENCY BAND 1 JUNCTION DEPLETION MODE 225 mW AMPLIFIER SILICON R-PDSO-G3 e3 Not Qualified 1 150 °C NOT SPECIFIED NOT SPECIFIED PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE Tin (Sn) GULL WING DUAL ON SEMICONDUCTOR SMALL OUTLINE, R-PDSO-G3 318-08 compliant EAR99 43 weeks 1 day 8541.21.00.95
BF256B
ON Semiconductor
查询价格
Yes Active N-CHANNEL NO SINGLE 3 ULTRA HIGH FREQUENCY BAND 1 JUNCTION DEPLETION MODE 350 mW AMPLIFIER SILICON TO-92 O-PBCY-T3 e3 150 °C NOT SPECIFIED NOT SPECIFIED PLASTIC/EPOXY ROUND CYLINDRICAL Matte Tin (Sn) - annealed THROUGH-HOLE BOTTOM ON SEMICONDUCTOR 135AN compliant EAR99 1 week 8541.21.00.95
MMBF4416A
ON Semiconductor
查询价格
Yes Active N-CHANNEL YES SINGLE 3 ULTRA HIGH FREQUENCY BAND 1 0.8 pF JUNCTION DEPLETION MODE 225 mW AMPLIFIER SILICON R-PDSO-G3 e3 Not Qualified 1 150 °C NOT SPECIFIED NOT SPECIFIED PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE Tin (Sn) GULL WING DUAL ON SEMICONDUCTOR SMALL OUTLINE, R-PDSO-G3 318BM compliant EAR99 16 weeks 8541.21.00.95
3SK199
Toshiba America Electronic Components
查询价格
No No Active N-CHANNEL YES SINGLE 4 13.5 V ULTRA HIGH FREQUENCY BAND 1 30 mA 18 dB 30 mA LOW NOISE 0.03 pF METAL-OXIDE SEMICONDUCTOR DUAL GATE, DEPLETION MODE AMPLIFIER SILICON R-PDSO-G4 e0 Not Qualified 125 °C 240 NOT SPECIFIED SOURCE PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE TIN LEAD GULL WING DUAL TOSHIBA CORP SMALL OUTLINE, R-PDSO-G4 4 unknown
SMMBFJ310LT3G
ON Semiconductor
查询价格
Yes Active N-CHANNEL YES JUNCTION 225 mW e3 1 150 °C NOT SPECIFIED NOT SPECIFIED Tin (Sn) ON SEMICONDUCTOR , 3 318-08 compliant EAR99 8 weeks
SMMBFJ310LT1G
ON Semiconductor
查询价格
Yes Active N-CHANNEL YES JUNCTION 225 mW e3 1 150 °C Tin (Sn) ON SEMICONDUCTOR , 3 318-08 compliant EAR99 8 weeks
BF999E6327
Infineon Technologies AG
查询价格
Yes Yes Active N-CHANNEL YES SINGLE 3 20 V VERY HIGH FREQUENCY BAND 1 30 mA METAL-OXIDE SEMICONDUCTOR DEPLETION MODE SILICON R-PDSO-G3 e3 Not Qualified 1 260 40 PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE MATTE TIN GULL WING DUAL INFINEON TECHNOLOGIES AG SMALL OUTLINE, R-PDSO-G3 compliant EAR99 8541.21.00.95
BF998E6327
Infineon Technologies AG
查询价格
Yes Yes Active N-CHANNEL YES SINGLE 4 12 V ULTRA HIGH FREQUENCY BAND 1 30 mA 30 mA LOW NOISE METAL-OXIDE SEMICONDUCTOR DUAL GATE, DEPLETION MODE 200 mW SILICON R-PDSO-G4 e3 Not Qualified 1 150 °C 260 40 SOURCE PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE Matte Tin (Sn) GULL WING DUAL INFINEON TECHNOLOGIES AG SMALL OUTLINE, R-PDSO-G4 4 compliant EAR99 SOT-143
2SK3078A(TE12L,F)
Toshiba America Electronic Components
查询价格
Active TOSHIBA CORP unknown EAR99
SMMBFJ309LT1G
ON Semiconductor
查询价格
Yes Active ON SEMICONDUCTOR 3 318-08 compliant 8 weeks
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