service@bom2buy.com (0512) 62988549

无法从文档中提取型号,请重试

射频小信号场效应晶体管: 9,029 个筛选结果
配置 (12)
最小漏源击穿电压 (39)
-
最大漏极电流 (Abs) (ID) (50)
-
最大漏极电流 (ID) (50)
-
-
最高频带 (9)
制造商 (50)
元件数量 (3)
-
端子数量 (17)
-
-
极性/信道类型 (2)
-
-
最小功率增益 (Gp) (50)
-
表面贴装 (2)
Most Relevant Technical Compliance Operating Conditions Physical Other
制造商型号 Composite Price
风险等级 是否无铅 是否Rohs认证 生命周期 极性/信道类型 表面贴装 配置 端子数量 最小漏源击穿电压 最高频带 元件数量 最大漏极电流 (Abs) (ID) 最小功率增益 (Gp) 最大漏极电流 (ID) 其他特性 最大反馈电容 (Crss) FET 技术 工作模式 最大功率耗散 (Abs) 晶体管应用 晶体管元件材料 JEDEC-95代码 JESD-30 代码 JESD-609代码 认证状态 湿度敏感等级 最高工作温度 峰值回流温度(摄氏度) 处于峰值回流温度下的最长时间 外壳连接 封装主体材料 封装形状 封装形式 端子面层 端子形式 端子位置 包装说明
针数
制造商包装代码
零件包装代码
MMBFJ310LT3G
ON Semiconductor
$0.2324
Yes Active N-CHANNEL YES SINGLE 3 25 V ULTRA HIGH FREQUENCY BAND 1 2.5 pF JUNCTION DEPLETION MODE 0.225 W AMPLIFIER SILICON TO-236AB R-PDSO-G3 e3 Not Qualified 1 150 °C 260 40 PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE Tin (Sn) GULL WING DUAL SMALL OUTLINE, R-PDSO-G3 3 318-08
MMBFJ310LT1G
ON Semiconductor
$0.2486
Yes Active N-CHANNEL YES SINGLE 3 25 V ULTRA HIGH FREQUENCY BAND 1 2.5 pF JUNCTION DEPLETION MODE 0.225 W AMPLIFIER SILICON TO-236 R-PDSO-G3 e3 Not Qualified 1 150 °C 260 40 PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE Tin (Sn) GULL WING DUAL SMALL OUTLINE, R-PDSO-G3 3 318-08 SOT-23
MMBFU310LT1G
ON Semiconductor
$0.2141
Yes Active N-CHANNEL YES SINGLE 3 25 V ULTRA HIGH FREQUENCY BAND 1 2.5 pF JUNCTION DEPLETION MODE 0.225 W AMPLIFIER SILICON TO-236AB R-PDSO-G3 e3 Not Qualified 1 150 °C 260 40 PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE Tin (Sn) GULL WING DUAL SMALL OUTLINE, R-PDSO-G3 3 318-08 SOT-23
MMBFJ309LT1G
ON Semiconductor
$0.2449
Yes Active N-CHANNEL YES SINGLE 3 25 V ULTRA HIGH FREQUENCY BAND 1 2.5 pF JUNCTION DEPLETION MODE 0.225 W AMPLIFIER SILICON TO-236 R-PDSO-G3 e3 Not Qualified 1 150 °C 260 40 PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE Tin (Sn) GULL WING DUAL SMALL OUTLINE, R-PDSO-G3 3 318-08 SOT-23
MMBF4416
ON Semiconductor
$0.1818
Yes Yes Active N-CHANNEL YES SINGLE 3 VERY HIGH FREQUENCY BAND 1 18 dB 0.9 pF JUNCTION DEPLETION MODE 0.225 W AMPLIFIER SILICON R-PDSO-G3 e3 Not Qualified 1 150 °C NOT SPECIFIED NOT SPECIFIED PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE Tin (Sn) GULL WING DUAL SOT-23, 3 PIN 318-08
2N5486
Central Semiconductor Corp
Check for Price
No No Active e0 Tin/Lead (Sn/Pb) , 3 TO-92
MMBF5485
ON Semiconductor
$0.1736
Yes Active N-CHANNEL YES SINGLE 3 ULTRA HIGH FREQUENCY BAND 1 1 pF METAL-OXIDE SEMICONDUCTOR DEPLETION MODE 0.35 W AMPLIFIER SILICON R-PDSO-G3 e3 Not Qualified 1 150 °C NOT SPECIFIED NOT SPECIFIED PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE Tin (Sn) GULL WING DUAL SOT-23, 3 PIN 318-08
MMBF5484
ON Semiconductor
$0.1632
Yes Yes Active N-CHANNEL YES SINGLE 3 ULTRA HIGH FREQUENCY BAND 1 1 pF METAL-OXIDE SEMICONDUCTOR DEPLETION MODE 0.225 W AMPLIFIER SILICON TO-236 R-PDSO-G3 e3 Not Qualified 1 150 °C NOT SPECIFIED NOT SPECIFIED PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE Tin (Sn) GULL WING DUAL SOT-23, 3 PIN 318-08
MMBF5486
ON Semiconductor
$0.1536
Yes Yes Active N-CHANNEL YES SINGLE 3 ULTRA HIGH FREQUENCY BAND 1 1 pF METAL-OXIDE SEMICONDUCTOR DEPLETION MODE 0.225 W AMPLIFIER SILICON R-PDSO-G3 e3 Not Qualified 1 150 °C NOT SPECIFIED NOT SPECIFIED PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE Tin (Sn) GULL WING DUAL SOT-23, 3 PIN 318-08
CPH6904-TL-E
ON Semiconductor
$0.4512
Yes Active N-CHANNEL YES JUNCTION 0.7 W e6 1 150 °C Tin/Bismuth (Sn/Bi) 6 318BD
MMBF4416A
ON Semiconductor
$0.1285
Yes Active N-CHANNEL YES SINGLE 3 ULTRA HIGH FREQUENCY BAND 1 0.8 pF JUNCTION DEPLETION MODE 0.225 W AMPLIFIER SILICON R-PDSO-G3 e3 Not Qualified 1 150 °C NOT SPECIFIED NOT SPECIFIED PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE Tin (Sn) GULL WING DUAL SOT-23, 3 PIN 318BM
BF256B
ON Semiconductor
$0.1180
Yes Active N-CHANNEL NO SINGLE 3 ULTRA HIGH FREQUENCY BAND 1 JUNCTION DEPLETION MODE 0.35 W AMPLIFIER SILICON TO-92 O-PBCY-T3 e3 150 °C NOT SPECIFIED NOT SPECIFIED PLASTIC/EPOXY ROUND CYLINDRICAL Tin (Sn) THROUGH-HOLE BOTTOM 135AN
SMMBFJ310LT1G
ON Semiconductor
$0.1458
Yes Active N-CHANNEL YES JUNCTION 0.225 W e3 1 150 °C Tin (Sn) , 3 318-08
SMMBFJ310LT3G
ON Semiconductor
$0.1724
Yes Active N-CHANNEL YES JUNCTION 0.225 W e3 1 150 °C NOT SPECIFIED NOT SPECIFIED Tin (Sn) , 3 318-08
BF999E6327
Infineon Technologies AG
$0.1612
Yes Yes Active N-CHANNEL YES SINGLE 3 20 V VERY HIGH FREQUENCY BAND 1 0.03 A METAL-OXIDE SEMICONDUCTOR DEPLETION MODE SILICON R-PDSO-G3 e3 Not Qualified 1 260 40 PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE MATTE TIN GULL WING DUAL SMALL OUTLINE, R-PDSO-G3
SMMBFJ309LT1G
ON Semiconductor
Check for Price
Yes Active 3 318-08
2SK3078A(TE12L,F)
Toshiba America Electronic Components
Check for Price
Active
BF998E6327
Infineon Technologies AG
$0.1225
Yes Yes Active N-CHANNEL YES SINGLE 4 12 V ULTRA HIGH FREQUENCY BAND 1 0.03 A 0.03 A LOW NOISE METAL-OXIDE SEMICONDUCTOR DUAL GATE, DEPLETION MODE 0.2 W SILICON R-PDSO-G4 e3 Not Qualified 1 150 °C 260 40 SOURCE PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE Matte Tin (Sn) GULL WING DUAL SMALL OUTLINE, R-PDSO-G4 4 SOT-143
NTE312
NTE Electronics Inc
$1.4947
Active N-CHANNEL NO SINGLE 3 VERY HIGH FREQUENCY BAND 1 10 dB 1 pF JUNCTION DEPLETION MODE 0.36 W AMPLIFIER SILICON TO-92 O-PBCY-W3 Not Qualified PLASTIC/EPOXY ROUND CYLINDRICAL WIRE BOTTOM CYLINDRICAL, O-PBCY-W3
NTE451
NTE Electronics Inc
$1.6408
Active N-CHANNEL NO SINGLE 3 ULTRA HIGH FREQUENCY BAND 1 10 dB 0.03 A 1 pF JUNCTION DEPLETION MODE 0.31 W AMPLIFIER SILICON TO-92 O-PBCY-W3 Not Qualified PLASTIC/EPOXY ROUND CYLINDRICAL WIRE BOTTOM CYLINDRICAL, O-PBCY-W3
12345Next
Add to list:
注册 or 登录