Most Relevant | Technical | Compliance | Operating Conditions | Physical | Dimensions | Other | ||||||||||||||||||||||||||||||||||||||||||
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制造商型号 |
Composite Price
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风险等级 | 是否无铅 | 生命周期 | 极性/信道类型 |
表面贴装
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配置 | 端子数量 | 最小漏源击穿电压 | 元件数量 | 最大漏极电流 (Abs) (ID) | 最大漏极电流 (ID) | 最大漏源导通电阻 | 其他特性 | 最大反馈电容 (Crss) | FET 技术 | 工作模式 | 功耗环境最大值 | 最大功率耗散 (Abs) |
晶体管应用
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晶体管元件材料
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JEDEC-95代码 | JESD-30 代码 | JESD-609代码 | 认证状态 |
参考标准
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湿度敏感等级 | 最高工作温度 | 最低工作温度 | 峰值回流温度(摄氏度) |
处于峰值回流温度下的最长时间
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封装主体材料 | 封装形状 | 封装形式 |
端子面层
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端子形式
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端子位置
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IHS 制造商
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零件包装代码
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包装说明
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针数
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制造商包装代码
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是否符合REACH标准
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ECCN代码
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HTS代码
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交付时间
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Samacsys Description
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2N7002LT1G
ON Semiconductor
|
查询价格 |
|
Yes | Active | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 3 | 60 V | 1 | 115 mA | 115 mA | 7.5 Ω | 5 pF | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 300 mW | SWITCHING | SILICON | TO-236 | R-PDSO-G3 | e3 | Not Qualified | 1 | 150 °C | -55 °C | NOT SPECIFIED | NOT SPECIFIED | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | Tin (Sn) | GULL WING | DUAL | ON SEMICONDUCTOR | SOT-23 | HALOGEN FREE AND ROHS COMPLIANT, CASE 318-08, 3 PIN | 3 | 318-08 | compliant | EAR99 | 8541.21.00.95 | 1 week | 2N7002LT1G, N-channel MOSFET Transistor 0.115 A 60 V, 3-Pin SOT-23 | ||||
BS170
ON Semiconductor
|
查询价格 |
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Yes | Active | N-CHANNEL | NO | SINGLE WITH BUILT-IN DIODE | 3 | 60 V | 1 | 500 mA | 500 mA | 5 Ω | LOGIC LEVEL COMPATIBLE | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 830 mW | SWITCHING | SILICON | TO-226AA | O-PBCY-T3 | e3 | Not Qualified | 150 °C | 240 | 30 | PLASTIC/EPOXY | ROUND | CYLINDRICAL | Matte Tin (Sn) - annealed | THROUGH-HOLE | BOTTOM | ON SEMICONDUCTOR | TO-92 | TO-92, 3 PIN | 3 | 135AN | compliant | EAR99 | 8541.21.00.95 | 1 week | N-channel JFET,BF245A 2mA 30V,BP | ||||||
BSS123
ON Semiconductor
|
查询价格 |
|
Yes | Active | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 3 | 100 V | 1 | 170 mA | 12 Ω | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 360 mW | 360 mW | SWITCHING | SILICON | R-PDSO-G3 | e3 | Not Qualified | 1 | 150 °C | -55 °C | NOT SPECIFIED | NOT SPECIFIED | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | Tin (Sn) | GULL WING | DUAL | ON SEMICONDUCTOR | SOT-23, 3 PIN | 318-08 | compliant | EAR99 | 8541.21.00.95 | 1 week | BSS123 N-Channel MOSFET, 170 mA, 100 V P... more | ||||||||
BSS84LT1G
ON Semiconductor
|
查询价格 |
|
Yes | Active | P-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 3 | 50 V | 1 | 130 mA | 130 mA | 10 Ω | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 225 mW | SWITCHING | SILICON | TO-236 | R-PDSO-G3 | e3 | Not Qualified | 1 | 150 °C | -55 °C | 260 | 10 | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | Tin (Sn) | GULL WING | DUAL | ON SEMICONDUCTOR | SOT-23 | ROHS COMPLIANT, MINIATURE, CASE 318-08, 3 PIN | 3 | 318-08 | compliant | EAR99 | 8541.21.00.95 | 10 weeks | MOSFET 50V 130mA P-Channel | |||||
BSS84,215
Nexperia
|
查询价格 |
|
Active | P-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 3 | 1 | LOGIC LEVEL COMPATIBLE | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | SWITCHING | SILICON | TO-236AB | R-PDSO-G3 | e3 | 1 | 150 °C | -65 °C | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | Tin (Sn) | GULL WING | DUAL | NEXPERIA | TO-236 | SMALL OUTLINE, R-PDSO-G3 | 3 | SOT23 | compliant | EAR99 | 8541.21.00.95 | 4 weeks | MOSFET P-Channel 50V 0.13A TO236AB NXP B... more | |||||||||||||
BST82,215
Nexperia
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查询价格 |
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Active | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 3 | 80 V | 1 | 175 mA | 10 Ω | 6 pF | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | SWITCHING | SILICON | R-PDSO-G3 | e3 | 1 | 150 °C | -65 °C | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | Tin (Sn) | GULL WING | DUAL | NEXPERIA | TO-236 | SMALL OUTLINE, R-PDSO-G3 | 3 | SOT23 | compliant | EAR99 | 8541.21.00.95 | 4 weeks | BST82,215 N-Channel MOSFET, 190 mA, 100 V, 3-Pin SOT-23 Nexperia | |||||||||||
BSS138LT3G
ON Semiconductor
|
查询价格 |
|
Yes | Active | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 3 | 50 V | 1 | 200 mA | 200 mA | 3.5 Ω | 5 pF | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 225 mW | SWITCHING | SILICON | TO-236 | R-PDSO-G3 | e3 | Not Qualified | 1 | 150 °C | -55 °C | 260 | 40 | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | Tin (Sn) | GULL WING | DUAL | ON SEMICONDUCTOR | SOT-23 | ROHS COMPLIANT, CASE 318-08, 3 PIN | 3 | 318-08 | compliant | EAR99 | 8541.21.00.95 | 7 weeks | MOSFET N-Channel 50V 0.2A SOT23 ON Semic... more | ||||
2N7002LT3G
ON Semiconductor
|
查询价格 |
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Yes | Active | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 3 | 60 V | 1 | 115 mA | 115 mA | 7.5 Ω | 5 pF | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 300 mW | SWITCHING | SILICON | TO-236 | R-PDSO-G3 | e3 | Not Qualified | 1 | 150 °C | -55 °C | NOT SPECIFIED | NOT SPECIFIED | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | Tin (Sn) | GULL WING | DUAL | ON SEMICONDUCTOR | SOT-23 | HALOGEN FREE AND ROHS COMPLIANT, CASE 318-08, 3 PIN | 3 | 318-08 | compliant | EAR99 | 8 weeks | NULL | |||||
2N7002
ON Semiconductor
|
查询价格 |
|
Yes | Active | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 3 | 60 V | 1 | 115 mA | 115 mA | 7.5 Ω | 5 pF | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 200 mW | SWITCHING | SILICON | TO-236AB | R-PDSO-G3 | e3 | Not Qualified | 1 | 150 °C | -55 °C | NOT SPECIFIED | NOT SPECIFIED | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | Tin (Sn) | GULL WING | DUAL | ON SEMICONDUCTOR | SOT-23, 3 PIN | 318-08 | compliant | EAR99 | 8541.21.00.95 | 1 week | N-channel MOSFET,2N7002 0.115A 60V | ||||||
2N7002ET1G
ON Semiconductor
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查询价格 |
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Yes | Active | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 3 | 60 V | 1 | 260 mA | 260 mA | 2.5 Ω | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 300 mW | SWITCHING | SILICON | TO-236 | R-PDSO-G3 | e3 | Not Qualified | 1 | 150 °C | -55 °C | 260 | 40 | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | Tin (Sn) | GULL WING | DUAL | ON SEMICONDUCTOR | SOT-23 | HALOGEN FREE AND ROHS COMPLIANT, CASE 318-08, 3 PIN | 3 | 318-08 | compliant | EAR99 | 11 weeks 4 days | MOSFET N-Channel 60V 0.26A SOT23 ON Semi... more | ||||||
2N7002,215
Nexperia
|
查询价格 |
|
Active | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 3 | 60 V | 1 | 300 mA | 5 Ω | 10 pF | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | SWITCHING | SILICON | TO-236AB | R-PDSO-G3 | e3 | IEC-60134 | 1 | 150 °C | -65 °C | 260 | 30 | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | Tin (Sn) | GULL WING | DUAL | NEXPERIA | TO-236 | 3 | SOT23 | compliant | EAR99 | 8541.21.00.95 | 4 weeks | MOSFET N-Channel 60V 0.3A TO236AB NXP 2N... more | ||||||||
2N7002K
ON Semiconductor
|
查询价格 |
|
Yes | Active | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 3 | 60 V | 1 | 300 mA | 115 mA | 2 Ω | 6 pF | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 350 W | SWITCHING | SILICON | TO-236AB | R-PDSO-G3 | e3 | Not Qualified | 1 | 150 °C | NOT SPECIFIED | NOT SPECIFIED | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | Tin (Sn) | GULL WING | DUAL | ON SEMICONDUCTOR | ROHS COMPLIANT, ULTRA SMALL PACKAGE-3 | 318-08 | compliant | EAR99 | 8541.21.00.95 | 8 weeks | MOSFET, Fairchild, 2N7002K Fairchild 2N7... more | |||||||
J112
ON Semiconductor
|
查询价格 |
|
Yes | Active | N-CHANNEL | NO | SINGLE | 3 | 1 | 50 Ω | 5 pF | JUNCTION | DEPLETION MODE | 400 mW | CHOPPER | SILICON | TO-92 | O-PBCY-T3 | e3 | Not Qualified | 150 °C | 240 | 30 | PLASTIC/EPOXY | ROUND | CYLINDRICAL | Matte Tin (Sn) - annealed | THROUGH-HOLE | BOTTOM | ON SEMICONDUCTOR | TO-92 | TO-226, 3 PIN | 3 | 135AN | compliant | 8541.21.00.95 | 1 week | |||||||||||
BSS138LT1G
ON Semiconductor
|
查询价格 |
|
Yes | Active | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 3 | 50 V | 1 | 200 mA | 200 mA | 3.5 Ω | 5 pF | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 225 mW | SWITCHING | SILICON | TO-236 | R-PDSO-G3 | e3 | Not Qualified | 1 | 150 °C | -55 °C | 260 | 40 | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | Tin (Sn) | GULL WING | DUAL | ON SEMICONDUCTOR | SOT-23 | ROHS COMPLIANT, CASE 318-08, 3 PIN | 3 | 318-08 | compliant | EAR99 | 8541.21.00.95 | 1 week | MOSFET N-Channel 50V 0.2A SOT23 ON Semic... more | ||||
BSS84
ON Semiconductor
|
查询价格 |
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Yes | Active | P-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 3 | 50 V | 1 | 130 mA | 130 mA | 10 Ω | 12 pF | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 250 mW | SWITCHING | SILICON | TO-236AB | R-PDSO-G3 | e3 | Not Qualified | 1 | 150 °C | -55 °C | NOT SPECIFIED | NOT SPECIFIED | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | Tin (Sn) | GULL WING | DUAL | ON SEMICONDUCTOR | SOT-23, 3 PIN | 318-08 | compliant | EAR99 | 8541.21.00.95 | 1 week | P-Channel Enhancement Mode Field Effect Transistor | ||||||
2N7002P,215
Nexperia
|
查询价格 |
|
Active | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 3 | 60 V | 1 | 360 mA | 1.6 Ω | LOGIC LEVEL COMPATIBLE | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | SWITCHING | SILICON | TO-236AB | R-PDSO-G3 | e3 | AEC-Q101; IEC-60134 | 1 | 150 °C | -55 °C | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | Tin (Sn) | GULL WING | DUAL | NEXPERIA | TO-236 | SMALL OUTLINE, R-PDSO-G3 | 3 | SOT23 | compliant | EAR99 | 8541.21.00.75 | 4 weeks | NEXPERIA - 2N7002P,215 - MOSFET,N CH,60V,0.36A,SOT23 | |||||||||
BSS123LT1G
ON Semiconductor
|
查询价格 |
|
Yes | Active | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 3 | 100 V | 1 | 170 mA | 170 mA | 6 Ω | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 225 mW | SWITCHING | SILICON | TO-236 | R-PDSO-G3 | e3 | Not Qualified | 1 | 150 °C | -55 °C | 260 | 40 | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | Tin (Sn) | GULL WING | DUAL | ON SEMICONDUCTOR | SOT-23 | ROHS COMPLIANT, CASE 318-08, 3 PIN | 3 | 318-08 | compliant | EAR99 | 8541.29.00.95 | 1 week | MOSFET N-Channel 100V 0.17A SOT23 ON Sem... more | |||||
2V7002LT1G
ON Semiconductor
|
查询价格 |
|
Yes | Active | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 3 | 60 V | 1 | 115 mA | 115 mA | 7.5 Ω | 5 pF | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 300 mW | SWITCHING | SILICON | TO-236 | R-PDSO-G3 | e3 | AEC-Q101 | 1 | 150 °C | -55 °C | NOT SPECIFIED | NOT SPECIFIED | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | Tin (Sn) | GULL WING | DUAL | ON SEMICONDUCTOR | SOT-23 | HALOGEN FREE AND ROHS COMPLIANT, CASE 318-08, 3 PIN | 3 | 318-08 | compliant | EAR99 | 6 weeks | 2V7002LT1G, NFET SOT23 60V 115MA 7.5O ON... more | |||||
2N7000
ON Semiconductor
|
查询价格 |
|
Yes | Active | N-CHANNEL | NO | SINGLE WITH BUILT-IN DIODE | 3 | 60 V | 1 | 200 mA | 200 mA | 5 Ω | LOGIC LEVEL COMPATIBLE | 5 pF | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 400 mW | SWITCHING | SILICON | TO-92 | O-PBCY-T3 | e3 | Not Qualified | 150 °C | -55 °C | 240 | 30 | PLASTIC/EPOXY | ROUND | CYLINDRICAL | Matte Tin (Sn) - annealed | THROUGH-HOLE | BOTTOM | ON SEMICONDUCTOR | TO-92 | TO-226, 3 PIN | 3 | 135AN | compliant | EAR99 | 8541.21.00.95 | 1 week | N-channel MOSFET,2N7000 0.2A 60V | ||||
2N7000-D26Z
ON Semiconductor
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查询价格 |
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Yes | Active | N-CHANNEL | NO | SINGLE WITH BUILT-IN DIODE | 3 | 60 V | 1 | 200 mA | 200 mA | 5 Ω | 5 pF | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 400 mW | SWITCHING | SILICON | TO-92 | O-PBCY-T3 | e3 | Not Qualified | 150 °C | NOT SPECIFIED | NOT SPECIFIED | PLASTIC/EPOXY | ROUND | CYLINDRICAL | Matte Tin (Sn) - annealed | THROUGH-HOLE | BOTTOM | ON SEMICONDUCTOR | TO-92, 3 PIN | 135AR | compliant |