型号 | Most Relevant | Technical | Compliance | Operating Conditions | Physical | Other | |||||||||||||||||||||||||||||||||||||||||||||
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数据手册 |
单价/库存
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风险等级 | 是否无铅 |
是否Rohs认证
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生命周期 | 极性/信道类型 |
表面贴装
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配置 | 端子数量 | 最小漏源击穿电压 | 元件数量 | 最大漏极电流 (ID) | 最大漏源导通电阻 | 其他特性 | 雪崩能效等级(Eas) | 最大反馈电容 (Crss) | FET 技术 | 工作模式 | 最大功率耗散 (Abs) | 最大脉冲漏极电流 (IDM) |
晶体管应用
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晶体管元件材料
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JEDEC-95代码 | JESD-30 代码 | JESD-609代码 | 认证状态 |
参考标准
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湿度敏感等级 | 最高工作温度 | 最低工作温度 | 峰值回流温度(摄氏度) |
处于峰值回流温度下的最长时间
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外壳连接 | 封装主体材料 | 封装形状 | 封装形式 |
端子面层
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端子形式
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端子位置
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Source Content uid
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mfrid
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包装说明
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是否符合REACH标准
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Country Of Origin
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ECCN代码
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YTEOL
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零件包装代码
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针数
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制造商包装代码
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IRF5210STRLPBF
Infineon Technologies AG
|
查询价格和库存 |
|
Yes | Active | P-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 2 | 100 V | 1 | 38 A | 60 mΩ | HIGH RELIABILITY, AVALANCHE RATED, ULTRA-LOW RESISTANCE | 120 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 170 W | 140 A | SWITCHING | SILICON | TO-263AB | R-PSSO-G2 | e3 | Not Qualified | 1 | 150 °C | -55 °C | 260 | 30 | DRAIN | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | Matte Tin (Sn) - with Nickel (Ni) barrier | GULL WING | SINGLE | IRF5210STRLPBF | 2065 | SMALL OUTLINE, R-PSSO-G2 | not_compliant | Mainland China | EAR99 | 5.75 | ||||||||
NVTFS5116PLTWG
onsemi
|
查询价格和库存 |
|
Yes | Active | P-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 5 | 60 V | 1 | 6 A | 72 mΩ | 45 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 3.2 W | 126 A | SILICON | S-PDSO-F5 | e3 | Not Qualified | 1 | 175 °C | 260 | 30 | DRAIN | PLASTIC/EPOXY | SQUARE | SMALL OUTLINE | Matte Tin (Sn) - annealed | FLAT | DUAL | NVTFS5116PLTWG | 2260 | WDFN-8 | not_compliant | Malaysia | EAR99 | 5.4 | WDFN8 3.3x3.3, 0.65P | 8 | 511AB | |||||||||
BUK9Y43-60E,115
Nexperia
|
查询价格和库存 |
|
Active | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 4 | 60 V | 1 | 22 A | 43 mΩ | AVALANCHE RATED | 12.4 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 86 A | SWITCHING | SILICON | MO-235 | R-PSSO-G4 | e3 | AEC-Q101; IEC-60134 | 1 | 260 | 30 | DRAIN | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | TIN | GULL WING | SINGLE | BUK9Y43-60E,115 | 229119436 | SMALL OUTLINE, R-PSSO-G4 | not_compliant | Philippines | 5.55 | SOIC | 4 | SOT669 | ||||||||||
TPH1400ANH,L1Q(M
Toshiba America Electronic Components
|
查询价格和库存 |
|
Active | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 8 | 100 V | 1 | 42 A | 13.6 mΩ | 46 mJ | 50 pF | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 48 W | 91 A | SWITCHING | SILICON | S-PDSO-F8 | 150 °C | DRAIN | PLASTIC/EPOXY | SQUARE | SMALL OUTLINE | FLAT | DUAL | TPH1400ANH,L1Q(M | 2484 | SMALL OUTLINE, S-PDSO-F5 | unknown | EAR99 | 5.85 | ||||||||||||||||||
FQD13N06LTM
onsemi
|
查询价格和库存 |
|
Yes | Active | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 2 | 60 V | 1 | 11 A | 145 mΩ | 90 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 28 W | 44 A | SWITCHING | SILICON | TO-252 | R-PSSO-G2 | e3 | Not Qualified | 1 | 150 °C | 260 | 30 | DRAIN | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | Matte Tin (Sn) - annealed | GULL WING | SINGLE | FQD13N06LTM | 2260 | DPAK-3 | not_compliant | Mainland China | EAR99 | 5.4 | 369AS | |||||||||
NVTFS5C673NLTAG
onsemi
|
查询价格和库存 |
|
Yes | Active | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 5 | 60 V | 1 | 13 A | 15 mΩ | 88 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 290 A | SILICON | S-PDSO-F5 | e3 | AEC-Q101 | 1 | 175 °C | -55 °C | 260 | 30 | DRAIN | PLASTIC/EPOXY | SQUARE | SMALL OUTLINE | Matte Tin (Sn) - annealed | FLAT | DUAL | NVTFS5C673NLTAG | 2260 | WDFN-8, 5 PIN | not_compliant | Malaysia | EAR99 | 5.55 | 511AB | |||||||||||
IRF740STRLPBF
Vishay Intertechnologies
|
查询价格和库存 |
|
Yes | Yes | Active | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 2 | 400 V | 1 | 10 A | 550 mΩ | AVALANCHE RATED | 520 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 125 W | 40 A | SWITCHING | SILICON | R-PSSO-G2 | e3 | Not Qualified | 1 | 150 °C | 260 | 30 | DRAIN | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | Matte Tin (Sn) | GULL WING | SINGLE | 2516 | compliant | EAR99 | 6.25 | 3 | |||||||||||
IRFBF20SPBF
Vishay Intertechnologies
|
查询价格和库存 |
|
Yes | Yes | Active | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 2 | 900 V | 1 | 1.7 A | 8 Ω | AVALANCHE RATED | 180 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 54 W | 6.8 A | SWITCHING | SILICON | R-PSSO-G2 | e3 | Not Qualified | 1 | 150 °C | 260 | 30 | DRAIN | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | Matte Tin (Sn) | GULL WING | SINGLE | 2516 | LEAD FREE, D2PAK-3 | compliant | EAR99 | 6.52 | 3 | ||||||||||
IRF540NSTRLPBF
Infineon Technologies AG
|
查询价格和库存 |
|
Yes | Active | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 2 | 100 V | 1 | 33 A | 44 mΩ | AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE | 185 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 130 W | 110 A | SWITCHING | SILICON | TO-263 | R-PSSO-G2 | e3 | Not Qualified | 1 | 175 °C | 260 | 30 | DRAIN | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | Matte Tin (Sn) - with Nickel (Ni) barrier | GULL WING | SINGLE | IRF540NSTRLPBF | 2065 | SMALL OUTLINE, R-PSSO-G2 | not_compliant | Mainland China | EAR99 | 5.85 | |||||||||
IRF520NPBF
Infineon Technologies AG
|
查询价格和库存 |
|
Yes | Active | N-CHANNEL | NO | SINGLE WITH BUILT-IN DIODE | 3 | 100 V | 1 | 9.7 A | 200 mΩ | AVALANCHE RATED, HIGH RELIABILITY | 91 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 47 W | 38 A | SWITCHING | SILICON | TO-220AB | R-PSFM-T3 | e3 | Not Qualified | 175 °C | NOT SPECIFIED | NOT SPECIFIED | DRAIN | PLASTIC/EPOXY | RECTANGULAR | FLANGE MOUNT | Tin (Sn) | THROUGH-HOLE | SINGLE | IRF520NPBF | 2065 | FLANGE MOUNT, R-PSFM-T3 | compliant | Mainland China | EAR99 | 5.05 | ||||||||||
IRF3710ZSTRLPBF
Infineon Technologies AG
|
查询价格和库存 |
|
Yes | Active | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 2 | 100 V | 1 | 59 A | 18 mΩ | AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE | 200 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 160 W | 240 A | SWITCHING | SILICON | TO-263AB | R-PSSO-G2 | e3 | Not Qualified | 1 | 175 °C | 260 | 30 | DRAIN | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | Matte Tin (Sn) - with Nickel (Ni) barrier | GULL WING | SINGLE | IRF3710ZSTRLPBF | 2065 | not_compliant | Mainland China | EAR99 | 5.85 | ||||||||||
TK31V60X,LQ
Toshiba America Electronic Components
|
查询价格和库存 |
|
Active | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 4 | 600 V | 1 | 30.8 A | 98 mΩ | 338 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 123 A | SWITCHING | SILICON | S-PSSO-N4 | DRAIN | PLASTIC/EPOXY | SQUARE | SMALL OUTLINE | NO LEAD | SINGLE | TK31V60X,LQ | 2484 | SMALL OUTLINE, S-PSSO-N4 | unknown | EAR99 | 6.65 | |||||||||||||||||||||
IRF9530STRLPBF
Vishay Siliconix
|
查询价格和库存 |
|
Yes | Yes | Active | P-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 2 | 100 V | 1 | 12 A | 300 mΩ | AVALANCHE RATED | 400 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 88 W | 48 A | SWITCHING | SILICON | TO-263AB | R-PSSO-G2 | e3 | Not Qualified | 1 | 175 °C | 260 | 30 | DRAIN | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | MATTE TIN | GULL WING | SINGLE | 2526 | SMALL OUTLINE, R-PSSO-G2 | unknown | EAR99 | 5.6 | D2PAK | 4 | ||||||||
IRF4905STRLPBF
Infineon Technologies AG
|
查询价格和库存 |
|
Yes | Active | P-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 2 | 55 V | 1 | 42 A | 20 mΩ | HIGH RELIABILITY, AVALANCHE RATED | 140 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 170 W | 280 A | SWITCHING | SILICON | TO-263AB | R-PSSO-G2 | e3 | Not Qualified | 1 | 150 °C | -55 °C | 260 | 30 | DRAIN | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | Matte Tin (Sn) - with Nickel (Ni) barrier | GULL WING | SINGLE | IRF4905STRLPBF | 2065 | not_compliant | Mainland China | EAR99 | 5.55 | |||||||||
IRFR3607TRPBF
Infineon Technologies AG
|
查询价格和库存 |
|
Yes | Active | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 2 | 75 V | 1 | 56 A | 9 mΩ | 120 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 140 W | 310 A | SWITCHING | SILICON | TO-252AA | R-PSSO-G2 | e3 | Not Qualified | 1 | 175 °C | 260 | 30 | DRAIN | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | Matte Tin (Sn) - with Nickel (Ni) barrier | GULL WING | SINGLE | IRFR3607TRPBF | 2065 | not_compliant | EAR99 | 5.9 | ||||||||||||
IRF7316TRPBF
Infineon Technologies AG
|
查询价格和库存 |
|
Yes | Active | P-CHANNEL | YES | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | 8 | 30 V | 2 | 4.9 A | 58 mΩ | AVALANCHE RATED | 140 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 30 A | SWITCHING | SILICON | MS-012AA | R-PDSO-G8 | 1 | NOT SPECIFIED | NOT SPECIFIED | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | GULL WING | DUAL | IRF7316TRPBF | 2065 | SO-8 | compliant | EAR99 | 5.32 | ||||||||||||||||
IRLR3705ZTRPBF
Infineon Technologies AG
|
查询价格和库存 |
|
Yes | Active | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 2 | 55 V | 1 | 42 A | 8 mΩ | HIGH RELIABILITY | 110 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 130 W | 360 A | SWITCHING | SILICON | TO-252AA | R-PSSO-G2 | e3 | Not Qualified | 1 | 175 °C | NOT SPECIFIED | NOT SPECIFIED | DRAIN | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | Matte Tin (Sn) - with Nickel (Ni) barrier | GULL WING | SINGLE | IRLR3705ZTRPBF | 2065 | SMALL OUTLINE, R-PSSO-G2 | not_compliant | Mainland China | EAR99 | 5.6 | |||||||||
IRFR120ZTRPBF
Infineon Technologies AG
|
查询价格和库存 |
|
Yes | Active | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 2 | 100 V | 1 | 8.7 A | 190 mΩ | AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE | 18 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 35 W | 35 A | SWITCHING | SILICON | TO-252AA | R-PSSO-G2 | e3 | Not Qualified | 1 | 175 °C | -55 °C | 260 | 30 | DRAIN | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | Matte Tin (Sn) - with Nickel (Ni) barrier | GULL WING | SINGLE | IRFR120ZTRPBF | 2065 | SMALL OUTLINE, R-PSSO-G2 | not_compliant | EAR99 | 5.6 | |||||||||
IRLR3114ZTRPBF
Infineon Technologies AG
|
查询价格和库存 |
|
Yes | Active | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 2 | 40 V | 1 | 42 A | 6.5 mΩ | AVALANCHE RATED, HIGH RELIABILITY, LOGIC LEVEL COMPATIBLE, ULTRA-LOW RESISTANCE | 260 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 140 W | 500 A | SWITCHING | SILICON | TO-252AA | R-PSSO-G2 | e3 | Not Qualified | 1 | 175 °C | NOT SPECIFIED | NOT SPECIFIED | DRAIN | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | Matte Tin (Sn) - with Nickel (Ni) barrier | GULL WING | SINGLE | IRLR3114ZTRPBF | 2065 | SMALL OUTLINE, R-PSSO-G2 | not_compliant | EAR99 | 5.6 | ||||||||||
SSM6J505NU,LF
Toshiba America Electronic Components
|
查询价格和库存 |
|
Active | P-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 6 | 12 V | 1 | 12 A | 16 mΩ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 30 A | SWITCHING | SILICON | S-PDSO-N6 | NOT SPECIFIED | NOT SPECIFIED | DRAIN | PLASTIC/EPOXY | SQUARE | SMALL OUTLINE | NO LEAD | DUAL | SSM6J505NU,LF | 2484 | SMALL OUTLINE, S-PDSO-N6 | unknown | EAR99 | 5.4 |