功率场效应晶体管封装型号_功率场效应晶体管厂家价格-bom2buy

型号

型号						Most Relevant								Technical											Compliance				Operating Conditions					Physical							Other
型号	数据手册	单价/库存	风险等级	是否无铅	是否Rohs认证	生命周期	极性/信道类型	表面贴装	配置	端子数量	最小漏源击穿电压	元件数量	最大漏极电流 (ID)	最大漏源导通电阻	其他特性	雪崩能效等级（Eas）	最大反馈电容 (Crss)	FET 技术	工作模式	最大功率耗散 (Abs)	最大脉冲漏极电流 (IDM)	晶体管应用	晶体管元件材料	最大关闭时间（toff）	最大开启时间（吨）	JEDEC-95代码	JESD-30 代码	JESD-609代码	认证状态	湿度敏感等级	最高工作温度	最低工作温度	峰值回流温度（摄氏度）	处于峰值回流温度下的最长时间	外壳连接	封装主体材料	封装形状	封装形式	端子面层	端子形式	端子位置	Source Content uid	mfrid	制造商包装代码	是否符合REACH标准	Country Of Origin	ECCN代码	YTEOL	包装说明	零件包装代码	针数
FQT7N10LTF onsemi		查询价格和库存		Yes		Active	N-CHANNEL	YES	SINGLE WITH BUILT-IN DIODE	4	100 V	1	1.7 A	380 mΩ		50 mJ		METAL-OXIDE SEMICONDUCTOR	ENHANCEMENT MODE	2 W	6.8 A	SWITCHING	SILICON				R-PDSO-G4	e3	Not Qualified	1	150 °C		260	30	DRAIN	PLASTIC/EPOXY	RECTANGULAR	SMALL OUTLINE	MATTE TIN	GULL WING	DUAL	FQT7N10LTF	2260	318H-01	not_compliant	South Korea	EAR99	5.6
FDD8880 onsemi		查询价格和库存		Yes		Active	N-CHANNEL	YES	SINGLE WITH BUILT-IN DIODE	2	30 V	1	35 A	12 mΩ		53 mJ	150 pF	METAL-OXIDE SEMICONDUCTOR	ENHANCEMENT MODE	55 W		SWITCHING	SILICON	108 ns	147 ns	TO-252AA	R-PSSO-G2	e3	Not Qualified	1	175 °C	-55 °C	260	30	DRAIN	PLASTIC/EPOXY	RECTANGULAR	SMALL OUTLINE	MATTE TIN	GULL WING	SINGLE	FDD8880	2260	369AS	not_compliant	Mainland China	EAR99	5.4	DPAK-3
IRF9530NSTRLPBF Infineon Technologies AG		查询价格和库存			Yes	Active	P-CHANNEL	YES	SINGLE WITH BUILT-IN DIODE	2	100 V	1	14 A	200 mΩ	AVALANCHE RATED, HIGH RELIABILITY	250 mJ		METAL-OXIDE SEMICONDUCTOR	ENHANCEMENT MODE	79 W	56 A	SWITCHING	SILICON				R-PSSO-G2	e3	Not Qualified	1	175 °C		260	30	DRAIN	PLASTIC/EPOXY	RECTANGULAR	SMALL OUTLINE	Matte Tin (Sn) - with Nickel (Ni) barrier	GULL WING	SINGLE	IRF9530NSTRLPBF	2065		not_compliant		EAR99	5.6	SMALL OUTLINE, R-PSSO-G2
IRFR5505TRPBF Infineon Technologies AG		查询价格和库存			Yes	Active	P-CHANNEL	YES	SINGLE WITH BUILT-IN DIODE	2	55 V	1	18 A	110 mΩ	AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE	150 mJ		METAL-OXIDE SEMICONDUCTOR	ENHANCEMENT MODE	57 W	64 A	SWITCHING	SILICON			TO-252AA	R-PSSO-G2	e3	Not Qualified	1	150 °C	-55 °C	260	30	DRAIN	PLASTIC/EPOXY	RECTANGULAR	SMALL OUTLINE	Matte Tin (Sn) - with Nickel (Ni) barrier	GULL WING	SINGLE	IRFR5505TRPBF	2065		not_compliant		EAR99	5.4
IRFR4105TRPBF Infineon Technologies AG		查询价格和库存			Yes	Active	N-CHANNEL	YES	SINGLE WITH BUILT-IN DIODE	2	55 V	1	20 A	45 mΩ	AVALANCHE RATED, ULTRA-LOW RESISTANCE	65 mJ		METAL-OXIDE SEMICONDUCTOR	ENHANCEMENT MODE	68 W	100 A	SWITCHING	SILICON			TO-252AA	R-PSSO-G2	e3	Not Qualified	1	175 °C		260	30	DRAIN	PLASTIC/EPOXY	RECTANGULAR	SMALL OUTLINE	Matte Tin (Sn) - with Nickel (Ni) barrier	GULL WING	SINGLE	IRFR4105TRPBF	2065		not_compliant		EAR99	5.55	SMALL OUTLINE, R-PSSO-G2
FDD4141 onsemi		查询价格和库存		Yes		Active	P-CHANNEL	YES	SINGLE WITH BUILT-IN DIODE	2	40 V	1	50 A	12.3 mΩ		337 mJ	310 pF	METAL-OXIDE SEMICONDUCTOR	ENHANCEMENT MODE	69 W	100 A	SWITCHING	SILICON	87 ns	32 ns	TO-252AA	R-PSSO-G2	e3	Not Qualified	1	150 °C	-55 °C	260	30	DRAIN	PLASTIC/EPOXY	RECTANGULAR	SMALL OUTLINE	Matte Tin (Sn) - annealed	GULL WING	SINGLE	FDD4141	2260	369AS	not_compliant	Mainland China	EAR99	5.55	TO-252, DPAK-3/2
NTR4501NT1G onsemi		查询价格和库存		Yes		Active	N-CHANNEL	YES	SINGLE WITH BUILT-IN DIODE	3	20 V	1	3.2 A	80 mΩ			50 pF	METAL-OXIDE SEMICONDUCTOR	ENHANCEMENT MODE	1.25 W	10 A	SWITCHING	SILICON	30 ns	37 ns	TO-236	R-PDSO-G3	e3	Not Qualified	1	150 °C	-55 °C	260	30		PLASTIC/EPOXY	RECTANGULAR	SMALL OUTLINE	Matte Tin (Sn) - annealed	GULL WING	DUAL	NTR4501NT1G	2260	318-08	compliant	Mainland China	EAR99	5.32	SOT-23, 3 PIN	SOT-23 (TO-236) 3 LEAD	3
IRF9510STRLPBF Vishay Intertechnologies		查询价格和库存		Yes	Yes	Active	P-CHANNEL	YES	SINGLE	2	100 V	1	4 A	1.2 Ω		200 mJ		METAL-OXIDE SEMICONDUCTOR	ENHANCEMENT MODE	43 W	16 A	SWITCHING	SILICON			TO-263AB	R-PSSO-G2	e3	Not Qualified	1	175 °C		260	30	DRAIN	PLASTIC/EPOXY	RECTANGULAR	SMALL OUTLINE	MATTE TIN	GULL WING	SINGLE		2516		compliant		EAR99	5.1	SMALL OUTLINE, R-PSSO-G2	D2PAK	4
IRFR210PBF Vishay Intertechnologies		查询价格和库存		Yes	Yes	Active	N-CHANNEL	YES	SINGLE WITH BUILT-IN DIODE	2	200 V	1	2.6 A	1.5 Ω	AVALANCHE RATED	130 mJ	15 pF	METAL-OXIDE SEMICONDUCTOR	ENHANCEMENT MODE	25 W	10 A	SWITCHING	SILICON			TO-252AA	R-PSSO-G2	e3	Not Qualified		150 °C	-55 °C			DRAIN	PLASTIC/EPOXY	RECTANGULAR	SMALL OUTLINE	TIN	GULL WING	SINGLE		2516		not_compliant	Mainland China	EAR99	5.95	SMALL OUTLINE, R-PSSO-G2	TO-252AA	3
NTHD3100CT1G onsemi		查询价格和库存		Yes		Active	N-CHANNEL AND P-CHANNEL	YES	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	8	20 V	2	2.9 A	80 mΩ				METAL-OXIDE SEMICONDUCTOR	ENHANCEMENT MODE	1.1 W	12 A	SWITCHING	SILICON				R-XDSO-C8	e3	Not Qualified	1	150 °C		260	30		UNSPECIFIED	RECTANGULAR	SMALL OUTLINE	MATTE TIN	C BEND	DUAL	NTHD3100CT1G	2260	1206A-03	compliant	Malaysia	EAR99	5.32	CHIPFET-8	ChipFET	8
IRFR024PBF Vishay Intertechnologies		查询价格和库存		Yes	Yes	Active	N-CHANNEL	YES	SINGLE WITH BUILT-IN DIODE	2	60 V	1	14 A	100 mΩ		91 mJ		METAL-OXIDE SEMICONDUCTOR	ENHANCEMENT MODE	42 W	56 A	SWITCHING	SILICON			TO-252AA	R-PSSO-G2		Not Qualified	1	150 °C		260	30	DRAIN	PLASTIC/EPOXY	RECTANGULAR	SMALL OUTLINE	Pure Matte Tin (Sn) - annealed	GULL WING	SINGLE		2516		not_compliant		EAR99	5.4		TO-252AA	3
IRF640SPBF Vishay Intertechnologies		查询价格和库存			Yes	Active	N-CHANNEL	YES	SINGLE WITH BUILT-IN DIODE	2	200 V	1	18 A	180 mΩ	AVALANCHE RATED	580 mJ		METAL-OXIDE SEMICONDUCTOR	ENHANCEMENT MODE	130 W	72 A	SWITCHING	SILICON				R-PSSO-G2	e3	Not Qualified		175 °C	-55 °C	260	40	DRAIN	PLASTIC/EPOXY	RECTANGULAR	SMALL OUTLINE	Matte Tin (Sn)	GULL WING	SINGLE		2516		not_compliant			5.97	LEAD FREE, PLASTIC, D2PAK-3
IRF5305STRLPBF Infineon Technologies AG		查询价格和库存			Yes	Active	P-CHANNEL	YES	SINGLE WITH BUILT-IN DIODE	2	55 V	1	31 A	60 mΩ	LOGIC LEVEL COMPATIBLE, AVALANCHE RATED, HIGH RELIABILITY	280 mJ		METAL-OXIDE SEMICONDUCTOR	ENHANCEMENT MODE	110 W	110 A	SWITCHING	SILICON			TO-252	R-PSSO-G2	e3	Not Qualified	1	175 °C		260	30	DRAIN	PLASTIC/EPOXY	RECTANGULAR	SMALL OUTLINE	Matte Tin (Sn) - with Nickel (Ni) barrier	GULL WING	SINGLE	IRF5305STRLPBF	2065		not_compliant	Mainland China	EAR99	5.4	LEAD FREE, PLASTIC, D2PAK-3
IRFR5410TRPBF Infineon Technologies AG		查询价格和库存			Yes	Active	P-CHANNEL	YES	SINGLE WITH BUILT-IN DIODE	2	100 V	1	13 A	205 mΩ	HIGH RELIABILITY, AVALANCHE RATED, ULTRA-LOW RESISTANCE	194 mJ		METAL-OXIDE SEMICONDUCTOR	ENHANCEMENT MODE	66 W	52 A	SWITCHING	SILICON			TO-252AA	R-PSSO-G2	e3	Not Qualified	1	150 °C	-55 °C	260	30	DRAIN	PLASTIC/EPOXY	RECTANGULAR	SMALL OUTLINE	Matte Tin (Sn) - with Nickel (Ni) barrier	GULL WING	SINGLE	IRFR5410TRPBF	2065		not_compliant	Mainland China, USA	EAR99	5.6
IRLR3410TRPBF Infineon Technologies AG		查询价格和库存			Yes	Active	N-CHANNEL	YES	SINGLE WITH BUILT-IN DIODE	2	100 V	1	17 A	125 mΩ	AVALANCHE RATED, ULTRA-LOW RESISTANCE	150 mJ	90 pF	METAL-OXIDE SEMICONDUCTOR	ENHANCEMENT MODE	79 W	60 A	SWITCHING	SILICON			TO-252AA	R-PSSO-G2	e3	Not Qualified	1	175 °C	-55 °C	260	30	DRAIN	PLASTIC/EPOXY	RECTANGULAR	SMALL OUTLINE	Matte Tin (Sn) - with Nickel (Ni) barrier	GULL WING	SINGLE	IRLR3410TRPBF	2065		not_compliant		EAR99	5.6
RFD16N05SM9A onsemi		查询价格和库存		Yes		Active	N-CHANNEL	YES	SINGLE WITH BUILT-IN DIODE	2	50 V	1	16 A	47 mΩ				METAL-OXIDE SEMICONDUCTOR	ENHANCEMENT MODE	72 W		SWITCHING	SILICON			TO-252AA	R-PSSO-G2	e3	Not Qualified	1	175 °C		260	30	DRAIN	PLASTIC/EPOXY	RECTANGULAR	SMALL OUTLINE	Matte Tin (Sn) - annealed	GULL WING	SINGLE	RFD16N05SM9A	2260	369AS	not_compliant	Mainland China	EAR99	5.55	TO-252AA VARIANT, 3 PIN
IRFZ34NPBF Infineon Technologies AG		查询价格和库存			Yes	Active	N-CHANNEL	NO	SINGLE WITH BUILT-IN DIODE	3	55 V	1	29 A	40 mΩ		65 mJ		METAL-OXIDE SEMICONDUCTOR	ENHANCEMENT MODE	68 W	100 A	SWITCHING	SILICON			TO-220AB	R-PSFM-T3		Not Qualified		175 °C		NOT SPECIFIED	NOT SPECIFIED	DRAIN	PLASTIC/EPOXY	RECTANGULAR	FLANGE MOUNT		THROUGH-HOLE	SINGLE	IRFZ34NPBF	2065		compliant		EAR99	5.15
BSC014N04LSIATMA1 Infineon Technologies AG		查询价格和库存		No	Yes	Active	N-CHANNEL	YES	SINGLE WITH BUILT-IN DIODE	8	40 V	1	166 A	2 mΩ		90 mJ	180 pF	METAL-OXIDE SEMICONDUCTOR	ENHANCEMENT MODE	96 W	780 A		SILICON				R-PDSO-F8	e3		1	150 °C	-55 °C	NOT SPECIFIED	NOT SPECIFIED	DRAIN	PLASTIC/EPOXY	RECTANGULAR	SMALL OUTLINE	Tin (Sn)	FLAT	DUAL	BSC014N04LSIATMA1	2065		not_compliant		EAR99	5.6	SMALL OUTLINE, R-PDSO-F3		8
IRF9540NSTRLPBF Infineon Technologies AG		查询价格和库存			Yes	Active	P-CHANNEL	YES	SINGLE WITH BUILT-IN DIODE	2	100 V	1	23 A	117 mΩ	AVALANCHE RATED, HIGH RELIABILITY	84 mJ		METAL-OXIDE SEMICONDUCTOR	ENHANCEMENT MODE	140 W	92 A	SWITCHING	SILICON			TO-263AB	R-PSSO-G2	e3	Not Qualified	1	175 °C	-55 °C	260	30	DRAIN	PLASTIC/EPOXY	RECTANGULAR	SMALL OUTLINE	Matte Tin (Sn) - with Nickel (Ni) barrier	GULL WING	SINGLE	IRF9540NSTRLPBF	2065		not_compliant		EAR99	5.6	SMALL OUTLINE, R-PSSO-G2
IRLR2905TRPBF Infineon Technologies AG		查询价格和库存			Yes	Active	N-CHANNEL	YES	SINGLE WITH BUILT-IN DIODE	2	55 V	1	20 A	30 mΩ	AVALANCHE RATED	210 mJ		METAL-OXIDE SEMICONDUCTOR	ENHANCEMENT MODE	110 W	160 A	SWITCHING	SILICON			TO-252AA	R-PSSO-G2	e3	Not Qualified	1	175 °C		260	30	DRAIN	PLASTIC/EPOXY	RECTANGULAR	SMALL OUTLINE	Matte Tin (Sn) - with Nickel (Ni) barrier	GULL WING	SINGLE	IRLR2905TRPBF	2065		not_compliant	Mainland China	EAR99	5.55	SMALL OUTLINE, R-PSSO-G2

型号						Most Relevant								Technical											Compliance				Operating Conditions					Physical							Other
型号	数据手册	单价/库存	风险等级	是否无铅	是否Rohs认证	生命周期	极性/信道类型	表面贴装	配置	端子数量	最小漏源击穿电压	元件数量	最大漏极电流 (ID)	最大漏源导通电阻	其他特性	雪崩能效等级（Eas）	最大反馈电容 (Crss)	FET 技术	工作模式	最大功率耗散 (Abs)	最大脉冲漏极电流 (IDM)	晶体管应用	晶体管元件材料	最大关闭时间（toff）	最大开启时间（吨）	JEDEC-95代码	JESD-30 代码	JESD-609代码	认证状态	湿度敏感等级	最高工作温度	最低工作温度	峰值回流温度（摄氏度）	处于峰值回流温度下的最长时间	外壳连接	封装主体材料	封装形状	封装形式	端子面层	端子形式	端子位置	Source Content uid	mfrid	制造商包装代码	是否符合REACH标准	Country Of Origin	ECCN代码	YTEOL	包装说明	零件包装代码	针数
FQT7N10LTF onsemi		查询价格和库存		Yes		Active	N-CHANNEL	YES	SINGLE WITH BUILT-IN DIODE	4	100 V	1	1.7 A	380 mΩ		50 mJ		METAL-OXIDE SEMICONDUCTOR	ENHANCEMENT MODE	2 W	6.8 A	SWITCHING	SILICON				R-PDSO-G4	e3	Not Qualified	1	150 °C		260	30	DRAIN	PLASTIC/EPOXY	RECTANGULAR	SMALL OUTLINE	MATTE TIN	GULL WING	DUAL	FQT7N10LTF	2260	318H-01	not_compliant	South Korea	EAR99	5.6
FDD8880 onsemi		查询价格和库存		Yes		Active	N-CHANNEL	YES	SINGLE WITH BUILT-IN DIODE	2	30 V	1	35 A	12 mΩ		53 mJ	150 pF	METAL-OXIDE SEMICONDUCTOR	ENHANCEMENT MODE	55 W		SWITCHING	SILICON	108 ns	147 ns	TO-252AA	R-PSSO-G2	e3	Not Qualified	1	175 °C	-55 °C	260	30	DRAIN	PLASTIC/EPOXY	RECTANGULAR	SMALL OUTLINE	MATTE TIN	GULL WING	SINGLE	FDD8880	2260	369AS	not_compliant	Mainland China	EAR99	5.4	DPAK-3
IRF9530NSTRLPBF Infineon Technologies AG		查询价格和库存			Yes	Active	P-CHANNEL	YES	SINGLE WITH BUILT-IN DIODE	2	100 V	1	14 A	200 mΩ	AVALANCHE RATED, HIGH RELIABILITY	250 mJ		METAL-OXIDE SEMICONDUCTOR	ENHANCEMENT MODE	79 W	56 A	SWITCHING	SILICON				R-PSSO-G2	e3	Not Qualified	1	175 °C		260	30	DRAIN	PLASTIC/EPOXY	RECTANGULAR	SMALL OUTLINE	Matte Tin (Sn) - with Nickel (Ni) barrier	GULL WING	SINGLE	IRF9530NSTRLPBF	2065		not_compliant		EAR99	5.6	SMALL OUTLINE, R-PSSO-G2
IRFR5505TRPBF Infineon Technologies AG		查询价格和库存			Yes	Active	P-CHANNEL	YES	SINGLE WITH BUILT-IN DIODE	2	55 V	1	18 A	110 mΩ	AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE	150 mJ		METAL-OXIDE SEMICONDUCTOR	ENHANCEMENT MODE	57 W	64 A	SWITCHING	SILICON			TO-252AA	R-PSSO-G2	e3	Not Qualified	1	150 °C	-55 °C	260	30	DRAIN	PLASTIC/EPOXY	RECTANGULAR	SMALL OUTLINE	Matte Tin (Sn) - with Nickel (Ni) barrier	GULL WING	SINGLE	IRFR5505TRPBF	2065		not_compliant		EAR99	5.4
IRFR4105TRPBF Infineon Technologies AG		查询价格和库存			Yes	Active	N-CHANNEL	YES	SINGLE WITH BUILT-IN DIODE	2	55 V	1	20 A	45 mΩ	AVALANCHE RATED, ULTRA-LOW RESISTANCE	65 mJ		METAL-OXIDE SEMICONDUCTOR	ENHANCEMENT MODE	68 W	100 A	SWITCHING	SILICON			TO-252AA	R-PSSO-G2	e3	Not Qualified	1	175 °C		260	30	DRAIN	PLASTIC/EPOXY	RECTANGULAR	SMALL OUTLINE	Matte Tin (Sn) - with Nickel (Ni) barrier	GULL WING	SINGLE	IRFR4105TRPBF	2065		not_compliant		EAR99	5.55	SMALL OUTLINE, R-PSSO-G2
FDD4141 onsemi		查询价格和库存		Yes		Active	P-CHANNEL	YES	SINGLE WITH BUILT-IN DIODE	2	40 V	1	50 A	12.3 mΩ		337 mJ	310 pF	METAL-OXIDE SEMICONDUCTOR	ENHANCEMENT MODE	69 W	100 A	SWITCHING	SILICON	87 ns	32 ns	TO-252AA	R-PSSO-G2	e3	Not Qualified	1	150 °C	-55 °C	260	30	DRAIN	PLASTIC/EPOXY	RECTANGULAR	SMALL OUTLINE	Matte Tin (Sn) - annealed	GULL WING	SINGLE	FDD4141	2260	369AS	not_compliant	Mainland China	EAR99	5.55	TO-252, DPAK-3/2
NTR4501NT1G onsemi		查询价格和库存		Yes		Active	N-CHANNEL	YES	SINGLE WITH BUILT-IN DIODE	3	20 V	1	3.2 A	80 mΩ			50 pF	METAL-OXIDE SEMICONDUCTOR	ENHANCEMENT MODE	1.25 W	10 A	SWITCHING	SILICON	30 ns	37 ns	TO-236	R-PDSO-G3	e3	Not Qualified	1	150 °C	-55 °C	260	30		PLASTIC/EPOXY	RECTANGULAR	SMALL OUTLINE	Matte Tin (Sn) - annealed	GULL WING	DUAL	NTR4501NT1G	2260	318-08	compliant	Mainland China	EAR99	5.32	SOT-23, 3 PIN	SOT-23 (TO-236) 3 LEAD	3
IRF9510STRLPBF Vishay Intertechnologies		查询价格和库存		Yes	Yes	Active	P-CHANNEL	YES	SINGLE	2	100 V	1	4 A	1.2 Ω		200 mJ		METAL-OXIDE SEMICONDUCTOR	ENHANCEMENT MODE	43 W	16 A	SWITCHING	SILICON			TO-263AB	R-PSSO-G2	e3	Not Qualified	1	175 °C		260	30	DRAIN	PLASTIC/EPOXY	RECTANGULAR	SMALL OUTLINE	MATTE TIN	GULL WING	SINGLE		2516		compliant		EAR99	5.1	SMALL OUTLINE, R-PSSO-G2	D2PAK	4
IRFR210PBF Vishay Intertechnologies		查询价格和库存		Yes	Yes	Active	N-CHANNEL	YES	SINGLE WITH BUILT-IN DIODE	2	200 V	1	2.6 A	1.5 Ω	AVALANCHE RATED	130 mJ	15 pF	METAL-OXIDE SEMICONDUCTOR	ENHANCEMENT MODE	25 W	10 A	SWITCHING	SILICON			TO-252AA	R-PSSO-G2	e3	Not Qualified		150 °C	-55 °C			DRAIN	PLASTIC/EPOXY	RECTANGULAR	SMALL OUTLINE	TIN	GULL WING	SINGLE		2516		not_compliant	Mainland China	EAR99	5.95	SMALL OUTLINE, R-PSSO-G2	TO-252AA	3
NTHD3100CT1G onsemi		查询价格和库存		Yes		Active	N-CHANNEL AND P-CHANNEL	YES	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	8	20 V	2	2.9 A	80 mΩ				METAL-OXIDE SEMICONDUCTOR	ENHANCEMENT MODE	1.1 W	12 A	SWITCHING	SILICON				R-XDSO-C8	e3	Not Qualified	1	150 °C		260	30		UNSPECIFIED	RECTANGULAR	SMALL OUTLINE	MATTE TIN	C BEND	DUAL	NTHD3100CT1G	2260	1206A-03	compliant	Malaysia	EAR99	5.32	CHIPFET-8	ChipFET	8
IRFR024PBF Vishay Intertechnologies		查询价格和库存		Yes	Yes	Active	N-CHANNEL	YES	SINGLE WITH BUILT-IN DIODE	2	60 V	1	14 A	100 mΩ		91 mJ		METAL-OXIDE SEMICONDUCTOR	ENHANCEMENT MODE	42 W	56 A	SWITCHING	SILICON			TO-252AA	R-PSSO-G2		Not Qualified	1	150 °C		260	30	DRAIN	PLASTIC/EPOXY	RECTANGULAR	SMALL OUTLINE	Pure Matte Tin (Sn) - annealed	GULL WING	SINGLE		2516		not_compliant		EAR99	5.4		TO-252AA	3
IRF640SPBF Vishay Intertechnologies		查询价格和库存			Yes	Active	N-CHANNEL	YES	SINGLE WITH BUILT-IN DIODE	2	200 V	1	18 A	180 mΩ	AVALANCHE RATED	580 mJ		METAL-OXIDE SEMICONDUCTOR	ENHANCEMENT MODE	130 W	72 A	SWITCHING	SILICON				R-PSSO-G2	e3	Not Qualified		175 °C	-55 °C	260	40	DRAIN	PLASTIC/EPOXY	RECTANGULAR	SMALL OUTLINE	Matte Tin (Sn)	GULL WING	SINGLE		2516		not_compliant			5.97	LEAD FREE, PLASTIC, D2PAK-3
IRF5305STRLPBF Infineon Technologies AG		查询价格和库存			Yes	Active	P-CHANNEL	YES	SINGLE WITH BUILT-IN DIODE	2	55 V	1	31 A	60 mΩ	LOGIC LEVEL COMPATIBLE, AVALANCHE RATED, HIGH RELIABILITY	280 mJ		METAL-OXIDE SEMICONDUCTOR	ENHANCEMENT MODE	110 W	110 A	SWITCHING	SILICON			TO-252	R-PSSO-G2	e3	Not Qualified	1	175 °C		260	30	DRAIN	PLASTIC/EPOXY	RECTANGULAR	SMALL OUTLINE	Matte Tin (Sn) - with Nickel (Ni) barrier	GULL WING	SINGLE	IRF5305STRLPBF	2065		not_compliant	Mainland China	EAR99	5.4	LEAD FREE, PLASTIC, D2PAK-3
IRFR5410TRPBF Infineon Technologies AG		查询价格和库存			Yes	Active	P-CHANNEL	YES	SINGLE WITH BUILT-IN DIODE	2	100 V	1	13 A	205 mΩ	HIGH RELIABILITY, AVALANCHE RATED, ULTRA-LOW RESISTANCE	194 mJ		METAL-OXIDE SEMICONDUCTOR	ENHANCEMENT MODE	66 W	52 A	SWITCHING	SILICON			TO-252AA	R-PSSO-G2	e3	Not Qualified	1	150 °C	-55 °C	260	30	DRAIN	PLASTIC/EPOXY	RECTANGULAR	SMALL OUTLINE	Matte Tin (Sn) - with Nickel (Ni) barrier	GULL WING	SINGLE	IRFR5410TRPBF	2065		not_compliant	Mainland China, USA	EAR99	5.6
IRLR3410TRPBF Infineon Technologies AG		查询价格和库存			Yes	Active	N-CHANNEL	YES	SINGLE WITH BUILT-IN DIODE	2	100 V	1	17 A	125 mΩ	AVALANCHE RATED, ULTRA-LOW RESISTANCE	150 mJ	90 pF	METAL-OXIDE SEMICONDUCTOR	ENHANCEMENT MODE	79 W	60 A	SWITCHING	SILICON			TO-252AA	R-PSSO-G2	e3	Not Qualified	1	175 °C	-55 °C	260	30	DRAIN	PLASTIC/EPOXY	RECTANGULAR	SMALL OUTLINE	Matte Tin (Sn) - with Nickel (Ni) barrier	GULL WING	SINGLE	IRLR3410TRPBF	2065		not_compliant		EAR99	5.6
RFD16N05SM9A onsemi		查询价格和库存		Yes		Active	N-CHANNEL	YES	SINGLE WITH BUILT-IN DIODE	2	50 V	1	16 A	47 mΩ				METAL-OXIDE SEMICONDUCTOR	ENHANCEMENT MODE	72 W		SWITCHING	SILICON			TO-252AA	R-PSSO-G2	e3	Not Qualified	1	175 °C		260	30	DRAIN	PLASTIC/EPOXY	RECTANGULAR	SMALL OUTLINE	Matte Tin (Sn) - annealed	GULL WING	SINGLE	RFD16N05SM9A	2260	369AS	not_compliant	Mainland China	EAR99	5.55	TO-252AA VARIANT, 3 PIN
IRFZ34NPBF Infineon Technologies AG		查询价格和库存			Yes	Active	N-CHANNEL	NO	SINGLE WITH BUILT-IN DIODE	3	55 V	1	29 A	40 mΩ		65 mJ		METAL-OXIDE SEMICONDUCTOR	ENHANCEMENT MODE	68 W	100 A	SWITCHING	SILICON			TO-220AB	R-PSFM-T3		Not Qualified		175 °C		NOT SPECIFIED	NOT SPECIFIED	DRAIN	PLASTIC/EPOXY	RECTANGULAR	FLANGE MOUNT		THROUGH-HOLE	SINGLE	IRFZ34NPBF	2065		compliant		EAR99	5.15
BSC014N04LSIATMA1 Infineon Technologies AG		查询价格和库存		No	Yes	Active	N-CHANNEL	YES	SINGLE WITH BUILT-IN DIODE	8	40 V	1	166 A	2 mΩ		90 mJ	180 pF	METAL-OXIDE SEMICONDUCTOR	ENHANCEMENT MODE	96 W	780 A		SILICON				R-PDSO-F8	e3		1	150 °C	-55 °C	NOT SPECIFIED	NOT SPECIFIED	DRAIN	PLASTIC/EPOXY	RECTANGULAR	SMALL OUTLINE	Tin (Sn)	FLAT	DUAL	BSC014N04LSIATMA1	2065		not_compliant		EAR99	5.6	SMALL OUTLINE, R-PDSO-F3		8
IRF9540NSTRLPBF Infineon Technologies AG		查询价格和库存			Yes	Active	P-CHANNEL	YES	SINGLE WITH BUILT-IN DIODE	2	100 V	1	23 A	117 mΩ	AVALANCHE RATED, HIGH RELIABILITY	84 mJ		METAL-OXIDE SEMICONDUCTOR	ENHANCEMENT MODE	140 W	92 A	SWITCHING	SILICON			TO-263AB	R-PSSO-G2	e3	Not Qualified	1	175 °C	-55 °C	260	30	DRAIN	PLASTIC/EPOXY	RECTANGULAR	SMALL OUTLINE	Matte Tin (Sn) - with Nickel (Ni) barrier	GULL WING	SINGLE	IRF9540NSTRLPBF	2065		not_compliant		EAR99	5.6	SMALL OUTLINE, R-PSSO-G2
IRLR2905TRPBF Infineon Technologies AG		查询价格和库存			Yes	Active	N-CHANNEL	YES	SINGLE WITH BUILT-IN DIODE	2	55 V	1	20 A	30 mΩ	AVALANCHE RATED	210 mJ		METAL-OXIDE SEMICONDUCTOR	ENHANCEMENT MODE	110 W	160 A	SWITCHING	SILICON			TO-252AA	R-PSSO-G2	e3	Not Qualified	1	175 °C		260	30	DRAIN	PLASTIC/EPOXY	RECTANGULAR	SMALL OUTLINE	Matte Tin (Sn) - with Nickel (Ni) barrier	GULL WING	SINGLE	IRLR2905TRPBF	2065		not_compliant	Mainland China	EAR99	5.55	SMALL OUTLINE, R-PSSO-G2

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