型号 | Most Relevant | Technical | Compliance | Operating Conditions | Physical | Other | ||||||||||||||||||||||||||||||||||||||||||||||||
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数据手册 |
单价/库存
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风险等级 | 是否无铅 |
是否Rohs认证
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生命周期 | 集电极-发射极最大电压 | 最大集电极电流 (IC) | 极性/信道类型 |
表面贴装
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配置 | 端子数量 | 最高频带 | 元件数量 | 最小直流电流增益 (hFE) | 最小功率增益 (Gp) |
标称过渡频率 (fT)
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其他特性 | 基于收集器的最大容量 | 功耗环境最大值 | 最大功率耗散 (Abs) |
晶体管应用
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晶体管元件材料
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VCEsat-Max
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JEDEC-95代码 | JESD-30 代码 | JESD-609代码 | 认证状态 |
参考标准
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湿度敏感等级 | 最高工作温度 | 最低工作温度 | 峰值回流温度(摄氏度) |
处于峰值回流温度下的最长时间
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外壳连接 | 封装主体材料 | 封装形状 | 封装形式 |
端子面层
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端子形式
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端子位置
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Source Content uid
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mfrid
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制造商包装代码
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是否符合REACH标准
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Country Of Origin
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ECCN代码
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HTS代码
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YTEOL
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零件包装代码
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包装说明
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针数
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Date Of Intro
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MMBT5179
onsemi
|
查询价格和库存 |
|
Yes | Active | 12 V | 50 mA | NPN | YES | SINGLE | 3 | ULTRA HIGH FREQUENCY BAND | 1 | 25 | 15 dB | 900 MHz | LOW NOISE | 1 pF | 225 mW | AMPLIFIER | SILICON | 400 mV | R-PDSO-G3 | e3 | Not Qualified | 1 | 150 °C | 260 | 30 | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | MATTE TIN | GULL WING | DUAL | MMBT5179 | 2260 | 318-08 | compliant | Philippines | EAR99 | 8541.21.00.75 | 4 | ||||||||||||
BF824,235
Nexperia
|
查询价格和库存 |
|
Active | 30 V | 25 mA | PNP | YES | SINGLE | 3 | 1 | 450 MHz | 0.3 pF | SILICON | TO-236AB | R-PDSO-G3 | e3 | Not Qualified | AEC-Q101 | 1 | 150 °C | 260 | 30 | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | TIN | GULL WING | DUAL | BF824,235 | 229119436 | SOT23 | compliant | Mainland China, Malaysia | EAR99 | 4 | TO-236 | SMALL OUTLINE, R-PDSO-G3 | 3 | 1993-03-01 | |||||||||||||||
BFY90
Central Semiconductor Corp
|
查询价格和库存 |
|
No | No | Active | 15 V | 25 mA | NPN | NO | SINGLE | 4 | ULTRA HIGH FREQUENCY BAND | 1 | 20 | 1.3 GHz | 1.5 pF | 200 mW | AMPLIFIER | SILICON | TO-72 | O-MBCY-W4 | e0 | Not Qualified | 200 °C | NOT SPECIFIED | NOT SPECIFIED | METAL | ROUND | CYLINDRICAL | Tin/Lead (Sn/Pb) | WIRE | BOTTOM | 1838 | not_compliant | EAR99 | 3 | TO-72 | TO-72, 4 PIN | 4 | |||||||||||||||
BF771E6327HTSA1
Infineon Technologies AG
|
查询价格和库存 |
|
Yes | Yes | Active | 12 V | 80 mA | NPN | YES | SINGLE | 3 | 1 | 8 GHz | 1 pF | AMPLIFIER | SILICON | R-PDSO-G3 | Not Qualified | 1 | 150 °C | NOT SPECIFIED | NOT SPECIFIED | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | GULL WING | DUAL | BF771E6327HTSA1 | 2065 | compliant | EAR99 | 4 | SMALL OUTLINE, R-PDSO-G3 | |||||||||||||||||||||
2SC3838KT146P
ROHM Semiconductor
|
查询价格和库存 |
|
Yes | Yes | Not Recommended | 11 V | 50 mA | NPN | YES | SINGLE | 3 | S BAND | 1 | 82 | 3.2 GHz | 1.5 pF | 200 mW | AMPLIFIER | SILICON | 500 mV | R-PDSO-G3 | e1 | Not Qualified | 1 | 150 °C | 260 | 10 | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | Tin/Silver/Copper (Sn/Ag/Cu) | GULL WING | DUAL | 2363 | compliant | EAR99 | 3 | SC-59 | SC-59, SMT3, 3 PIN | 3 | ||||||||||||||
MMBTH10Q-7-F
Diodes Incorporated
|
查询价格和库存 |
|
Active | 25 V | 50 mA | NPN | YES | SINGLE | 3 | ULTRA HIGH FREQUENCY BAND | 1 | 60 | 650 MHz | HIGH RELIABILITY | 0.7 pF | 350 mW | AMPLIFIER | SILICON | 500 mV | R-PDSO-G3 | e3 | AEC-Q101; MIL-STD-202 | 1 | 150 °C | -65 °C | 260 | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | Matte Tin (Sn) | GULL WING | DUAL | 1926 | unknown | EAR99 | 4 | ||||||||||||||||||
2N918
Central Semiconductor Corp
|
查询价格和库存 |
|
No | No | Active | 15 V | 50 mA | NPN | NO | SINGLE | 4 | 1 | 20 | 600 MHz | 3 pF | 200 mW | AMPLIFIER | SILICON | TO-72 | O-MBCY-W4 | e0 | Not Qualified | 200 °C | -65 °C | METAL | ROUND | CYLINDRICAL | TIN LEAD | WIRE | BOTTOM | 1838 | unknown | EAR99 | 4 | ||||||||||||||||||||
NSVMMBTH10LT1G
onsemi
|
查询价格和库存 |
|
Yes | Active | NPN | YES | SINGLE | 1 | 60 | 650 MHz | 300 mW | e3 | 1 | 150 °C | 260 | 30 | Matte Tin (Sn) - annealed | NSVMMBTH10LT1G | 2260 | 318-08 | compliant | Mainland China | EAR99 | 4 | SOT-23 (TO-236) 3 LEAD | 3 | ||||||||||||||||||||||||||||
MMBTH10
Fairchild Semiconductor Corporation
|
查询价格和库存 |
|
Yes | Yes | Transferred | 25 V | 50 mA | NPN | YES | SINGLE | 3 | ULTRA HIGH FREQUENCY BAND | 1 | 60 | 650 MHz | LOW NOISE | 0.7 pF | 225 mW | AMPLIFIER | SILICON | R-PDSO-G3 | e3 | Not Qualified | 1 | 150 °C | 260 | 30 | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | MATTE TIN | GULL WING | DUAL | MMBTH10 | 1978 | 3LD, SOT23, JEDEC TO-236, LOW PROFILE | compliant | EAR99 | 8541.21.00.95 | SOT-23 | 3 | |||||||||||||
BFS17NTA
Diodes Incorporated
|
查询价格和库存 |
|
Yes | Yes | Active | 11 V | 50 mA | NPN | YES | SINGLE | 3 | 1 | 56 | 3.2 GHz | 1.5 pF | 330 mW | SWITCHING | SILICON | R-PDSO-G3 | e3 | Not Qualified | 1 | 150 °C | 260 | 30 | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | MATTE TIN | GULL WING | DUAL | 1926 | compliant | EAR99 | 4 | GREEN, PLASTIC PACKAGE-3 | 3 | |||||||||||||||||
BFR93AWH6327XTSA1
Infineon Technologies AG
|
查询价格和库存 |
|
Yes | Active | 12 V | 90 mA | NPN | YES | SINGLE | 3 | L BAND | 1 | 6 GHz | 0.8 pF | AMPLIFIER | SILICON | R-PDSO-G3 | e3 | AEC-Q101 | 1 | NOT SPECIFIED | NOT SPECIFIED | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | Tin (Sn) | GULL WING | DUAL | BFR93AWH6327XTSA1 | 2065 | compliant | EAR99 | 4 | SMALL OUTLINE, R-PDSO-G3 | ||||||||||||||||||||
BFR93AE6327HTSA1
Infineon Technologies AG
|
查询价格和库存 |
|
Yes | Yes | Active | 12 V | 50 mA | NPN | YES | SINGLE | 3 | 1 | 70 | 6 GHz | 0.9 pF | 300 mW | AMPLIFIER | SILICON | R-PDSO-G3 | e3 | Not Qualified | 1 | 150 °C | NOT SPECIFIED | NOT SPECIFIED | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | Tin (Sn) | GULL WING | DUAL | BFR93AE6327HTSA1 | 2065 | compliant | Mainland China | EAR99 | 4 | SMALL OUTLINE, R-PDSO-G3 | ||||||||||||||||
BFR92PE6327HTSA1
Infineon Technologies AG
|
查询价格和库存 |
|
Yes | Yes | Active | 15 V | 30 mA | NPN | YES | SINGLE | 3 | L BAND | 1 | 70 | 5 GHz | 0.6 pF | 280 mW | SWITCHING | SILICON | R-PDSO-G3 | e3 | Not Qualified | 1 | 150 °C | NOT SPECIFIED | NOT SPECIFIED | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | Tin (Sn) | GULL WING | DUAL | BFR92PE6327HTSA1 | 2065 | compliant | EAR99 | 4 | SMALL OUTLINE, R-PDSO-G3 | ||||||||||||||||
NSVF6003SB6T1G
onsemi
|
查询价格和库存 |
|
Yes | Active | 12 V | 150 mA | NPN | YES | SINGLE | 6 | ULTRA HIGH FREQUENCY BAND | 1 | 100 | 7 GHz | 2 pF | 800 mW | AMPLIFIER | SILICON | R-PDSO-G6 | e6 | AEC-Q101 | 1 | 150 °C | -55 °C | 260 | 30 | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | Tin/Bismuth (Sn/Bi) | GULL WING | DUAL | NSVF6003SB6T1G | 2260 | 318BD | compliant | Mainland China | EAR99 | 4 | 2016-08-24 | ||||||||||||||
HFA3127BZ
Renesas Electronics Corporation
|
查询价格和库存 |
|
Yes | Active | 8 V | NPN | YES | SEPARATE, 5 ELEMENTS | 16 | ULTRA HIGH FREQUENCY BAND | 5 | 8 GHz | LOW NOISE | AMPLIFIER | SILICON | MS-012AC | R-PDSO-G16 | e3 | 3 | 260 | 30 | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | Matte Tin (Sn) - annealed | GULL WING | DUAL | HFA3127BZ | 2354 | M16.15 | compliant | EAR99 | 4 | SOICN | SMALL OUTLINE, R-PDSO-G16 | 16 | ||||||||||||||||||
HFA3127RZ
Renesas Electronics Corporation
|
查询价格和库存 |
|
Yes | Active | 8 V | NPN | YES | SEPARATE, 5 ELEMENTS | 16 | ULTRA HIGH FREQUENCY BAND | 5 | 8 GHz | LOW NOISE | AMPLIFIER | SILICON | S-PQCC-N16 | e3 | 2 | 260 | 30 | PLASTIC/EPOXY | SQUARE | CHIP CARRIER | Matte Tin (Sn) - annealed | NO LEAD | QUAD | HFA3127RZ | 2354 | L16.3X3 | compliant | EAR99 | 4 | QFN | CHIP CARRIER, S-PQCC-N16 | 16 | |||||||||||||||||||
HFA3102BZ96
Renesas Electronics Corporation
|
查询价格和库存 |
|
Yes | Active | 8 V | 30 mA | NPN | YES | COMPLEX | 14 | ULTRA HIGH FREQUENCY BAND | 6 | 40 | 10 GHz | 300 pF | AMPLIFIER | SILICON | MS-012AB | R-PDSO-G14 | e3 | 3 | 85 °C | -40 °C | 260 | 30 | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | Matte Tin (Sn) - annealed | GULL WING | DUAL | HFA3102BZ96 | 2354 | M14.15 | compliant | EAR99 | 4 | SOICN | , | 14 | ||||||||||||||
BFR193FH6327XTSA1
Infineon Technologies AG
|
查询价格和库存 |
|
Yes | Active | 12 V | 80 mA | NPN | YES | SINGLE | 3 | L BAND | 1 | 8 GHz | LOW NOISE | 1 pF | AMPLIFIER | SILICON | R-PDSO-F3 | e3 | AEC-Q101 | 1 | NOT SPECIFIED | NOT SPECIFIED | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | Tin (Sn) | FLAT | DUAL | BFR193FH6327XTSA1 | 2065 | compliant | EAR99 | 4 | SMALL OUTLINE, R-PDSO-F3 | |||||||||||||||||||
BFR193L3E6327XTMA1
Infineon Technologies AG
|
查询价格和库存 |
|
Yes | Active | 12 V | 80 mA | NPN | YES | SINGLE | 3 | L BAND | 1 | 70 | 8 GHz | LOW NOISE | 0.9 pF | 580 mW | AMPLIFIER | SILICON | R-XBCC-N3 | e4 | AEC-Q101 | 1 | 150 °C | NOT SPECIFIED | NOT SPECIFIED | COLLECTOR | UNSPECIFIED | RECTANGULAR | CHIP CARRIER | Gold (Au) | NO LEAD | BOTTOM | BFR193L3E6327XTMA1 | 2065 | compliant | EAR99 | 4 | ||||||||||||||||
BFR181E6327HTSA1
Infineon Technologies AG
|
查询价格和库存 |
|
Yes | Active | 12 V | 20 mA | NPN | YES | SINGLE | 3 | L BAND | 1 | 8 GHz | 0.45 pF | AMPLIFIER | SILICON | R-PDSO-G3 | e3 | AEC-Q101 | 1 | NOT SPECIFIED | NOT SPECIFIED | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | Tin (Sn) | GULL WING | DUAL | BFR181E6327HTSA1 | 2065 | compliant | EAR99 | 4 | SMALL OUTLINE, R-PDSO-G3 |