型号 | Most Relevant | Technical | Compliance | Operating Conditions | Physical | Other | ||||||||||||||||||||||||||||||||||||||||||||
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数据手册 |
单价/库存
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风险等级 | 是否无铅 |
是否Rohs认证
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生命周期 | 极性/信道类型 |
表面贴装
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配置 | 端子数量 | 最小漏源击穿电压 | 元件数量 | 最大漏极电流 (ID) | 最大漏源导通电阻 | 其他特性 | 最大反馈电容 (Crss) | FET 技术 | 工作模式 | 功耗环境最大值 | 最大功率耗散 (Abs) |
晶体管应用
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晶体管元件材料
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JEDEC-95代码 | JESD-30 代码 | JESD-609代码 | 认证状态 |
参考标准
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湿度敏感等级 | 最高工作温度 | 最低工作温度 | 峰值回流温度(摄氏度) |
处于峰值回流温度下的最长时间
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封装主体材料 | 封装形状 | 封装形式 |
端子面层
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端子形式
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端子位置
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Source Content uid
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mfrid
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是否符合REACH标准
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Country Of Origin
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ECCN代码
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HTS代码
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YTEOL
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包装说明
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零件包装代码
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针数
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制造商包装代码
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VN0300L-G
Microchip Technology Inc
|
查询价格和库存 |
|
Yes | Active | N-CHANNEL | NO | SINGLE WITH BUILT-IN DIODE | 3 | 30 V | 1 | 640 mA | 1.2 Ω | LOW THRESHOLD | 50 pF | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 1 W | SWITCHING | SILICON | TO-92 | O-PBCY-T3 | e3 | Not Qualified | 150 °C | -55 °C | PLASTIC/EPOXY | ROUND | CYLINDRICAL | MATTE TIN | THROUGH-HOLE | BOTTOM | VN0300L-G | 2188 | compliant | Thailand | EAR99 | 8541.29.00.95 | 24.61 | ||||||||||||
2N7002AQ-13
Diodes Incorporated
|
查询价格和库存 |
|
Yes | Active | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 3 | 60 V | 1 | 180 mA | 6 Ω | 1.4 pF | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 540 mW | SWITCHING | SILICON | R-PDSO-G3 | e3 | AEC-Q101 | 1 | 150 °C | -55 °C | 260 | 30 | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | Matte Tin (Sn) | GULL WING | DUAL | 1926 | compliant | EAR99 | 6.5 | SMALL OUTLINE, R-PDSO-G3 | |||||||||||||
VN3205N3-G
Microchip Technology Inc
|
查询价格和库存 |
|
Yes | Active | N-CHANNEL | NO | SINGLE WITH BUILT-IN DIODE | 3 | 50 V | 1 | 1.2 A | 300 mΩ | HIGH INPUT IMPEDANCE | 30 pF | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 1 W | 1 W | SWITCHING | SILICON | TO-92 | O-PBCY-T3 | e3 | Not Qualified | 150 °C | -55 °C | PLASTIC/EPOXY | ROUND | CYLINDRICAL | MATTE TIN | THROUGH-HOLE | BOTTOM | VN3205N3-G | 2188 | compliant | Thailand | EAR99 | 8541.29.00.95 | 24.61 | TO-92, 3 PIN | ||||||||||
DMN63D8LDW-7
Diodes Incorporated
|
查询价格和库存 |
|
Yes | Yes | Active | N-CHANNEL | YES | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | 6 | 30 V | 2 | 220 mA | 4.5 Ω | HIGH RELIABILITY | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | SWITCHING | SILICON | R-PDSO-G6 | e3 | AEC-Q101 | 1 | 260 | 30 | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | MATTE TIN | GULL WING | DUAL | 1926 | compliant | Mainland China | EAR99 | 6.5 | |||||||||||||||
MMBFJ177LT1G
onsemi
|
查询价格和库存 |
|
Yes | Active | P-CHANNEL | YES | SINGLE | 3 | 1 | 300 Ω | 5.5 pF | JUNCTION | DEPLETION MODE | CHOPPER | SILICON | TO-236AB | R-PDSO-G3 | e3 | Not Qualified | 1 | 150 °C | 260 | 40 | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | Matte Tin (Sn) - annealed | GULL WING | DUAL | MMBFJ177LT1G | 2260 | compliant | Mainland China | EAR99 | 6.5 | HALOGEN FREE AND ROHS COMPLIANT, CASE 318-08, 3 PIN | SOT-23 (TO-236) 3 LEAD | 3 | 318-08 | |||||||||||
2N7002-G
Microchip Technology Inc
|
查询价格和库存 |
|
Yes | Active | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 3 | 60 V | 1 | 115 mA | 7.5 Ω | HIGH INPUT IMPEDANCE | 5 pF | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 360 mW | SWITCHING | SILICON | TO-236AB | R-PDSO-G3 | e3 | Not Qualified | TS 16949 | 1 | 150 °C | -55 °C | 260 | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | MATTE TIN | GULL WING | DUAL | 2N7002-G | 2188 | compliant | Thailand | EAR99 | 8542.39.00.01 | 24.61 | GREEN PACKAGE-3 | ||||||||
2N7000_D26Z
onsemi
|
查询价格和库存 |
|
Yes | Active | N-CHANNEL | NO | SINGLE WITH BUILT-IN DIODE | 3 | 60 V | 1 | 200 mA | 5 Ω | 5 pF | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 400 mW | SWITCHING | SILICON | TO-92 | O-PBCY-T3 | e3 | Not Qualified | 150 °C | -55 °C | PLASTIC/EPOXY | ROUND | CYLINDRICAL | MATTE TIN | THROUGH-HOLE | BOTTOM | 2N7000_D26Z | 2260 | compliant | Mainland China | EAR99 | 6.05 | CYLINDRICAL, O-PBCY-T3 | |||||||||||||
TN0620N3-G
Microchip Technology Inc
|
查询价格和库存 |
|
Yes | Active | N-CHANNEL | NO | SINGLE WITH BUILT-IN DIODE | 3 | 200 V | 1 | 250 mA | 6 Ω | LOW THRESHOLD | 35 pF | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 1 W | 1 W | SWITCHING | SILICON | TO-92 | O-PBCY-T3 | e3 | Not Qualified | 150 °C | -55 °C | PLASTIC/EPOXY | ROUND | CYLINDRICAL | MATTE TIN | THROUGH-HOLE | BOTTOM | TN0620N3-G | 2188 | compliant | Thailand | EAR99 | 8541.29.00.95 | 24.61 | TO-92, 3 PIN | ||||||||||
DN2535N3-G
Microchip Technology Inc
|
查询价格和库存 |
|
Yes | Active | N-CHANNEL | NO | SINGLE WITH BUILT-IN DIODE | 3 | 350 V | 1 | 120 mA | 25 Ω | HIGH INPUT IMPEDANCE | 5 pF | METAL-OXIDE SEMICONDUCTOR | DEPLETION MODE | 1 W | SWITCHING | SILICON | TO-92 | O-PBCY-T3 | e3 | Not Qualified | 150 °C | -55 °C | PLASTIC/EPOXY | ROUND | CYLINDRICAL | MATTE TIN | THROUGH-HOLE | BOTTOM | DN2535N3-G | 2188 | compliant | Thailand | EAR99 | 8541.29.00.95 | 24.61 | ||||||||||||
TP2104N3-G
Microchip Technology Inc
|
查询价格和库存 |
|
Yes | Active | P-CHANNEL | NO | SINGLE WITH BUILT-IN DIODE | 3 | 40 V | 1 | 175 mA | 6 Ω | LOW THRESHOLD | 10 pF | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 740 mW | 740 mW | SWITCHING | SILICON | TO-92 | O-PBCY-T3 | e3 | Not Qualified | 150 °C | -55 °C | PLASTIC/EPOXY | ROUND | CYLINDRICAL | MATTE TIN | THROUGH-HOLE | BOTTOM | TP2104N3-G | 2188 | compliant | Thailand | EAR99 | 8541.29.00.95 | 24.61 | GREEN PACKAGE-3 | ||||||||||
VN0104N3-G
Microchip Technology Inc
|
查询价格和库存 |
|
Yes | Active | N-CHANNEL | NO | SINGLE WITH BUILT-IN DIODE | 3 | 40 V | 1 | 350 mA | 3 Ω | 8 pF | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 1 W | SWITCHING | SILICON | TO-92 | O-PBCY-T3 | e3 | Not Qualified | 150 °C | -55 °C | PLASTIC/EPOXY | ROUND | CYLINDRICAL | MATTE TIN | THROUGH-HOLE | BOTTOM | VN0104N3-G | 2188 | compliant | Thailand | EAR99 | 8541.29.00.95 | 24.61 | TO-92, 3 PIN | ||||||||||||
MMBF4393LT3G
onsemi
|
查询价格和库存 |
|
Yes | Active | N-CHANNEL | YES | SINGLE | 3 | 30 V | 1 | 100 Ω | 3.5 pF | JUNCTION | DEPLETION MODE | 225 mW | SWITCHING | SILICON | TO-236AB | R-PDSO-G3 | e3 | Not Qualified | 1 | 150 °C | 260 | 30 | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | MATTE TIN | GULL WING | DUAL | MMBF4393LT3G | 2260 | compliant | Mainland China | EAR99 | 6.5 | CASE 318-08, 3 PIN | SOT-23 (TO-236) 3 LEAD | 3 | 318-08 | |||||||||
TP2540N3-G
Microchip Technology Inc
|
查询价格和库存 |
|
Yes | Active | P-CHANNEL | NO | SINGLE WITH BUILT-IN DIODE | 3 | 400 V | 1 | 86 mA | 30 Ω | LOW THRESHOLD | 25 pF | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 740 mW | 740 mW | SWITCHING | SILICON | TO-92 | O-PBCY-T3 | e3 | Not Qualified | 150 °C | -55 °C | PLASTIC/EPOXY | ROUND | CYLINDRICAL | MATTE TIN | THROUGH-HOLE | BOTTOM | TP2540N3-G | 2188 | compliant | Thailand | EAR99 | 8541.29.00.95 | 24.61 | GREEN PACKAGE-3 | ||||||||||
FDC602P
onsemi
|
查询价格和库存 |
|
Yes | Active | P-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 6 | 20 V | 1 | 5.5 A | 33 mΩ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 1.6 W | SWITCHING | SILICON | R-PDSO-G6 | e3 | Not Qualified | 1 | 150 °C | -55 °C | 260 | 30 | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | MATTE TIN | GULL WING | DUAL | FDC602P | 2260 | compliant | Philippines | EAR99 | 7.07 | SUPERSOT-6 | 419BL | |||||||||||
NTR4503NT1G
onsemi
|
查询价格和库存 |
|
Yes | Active | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 3 | 30 V | 1 | 1.5 A | 110 mΩ | 25 pF | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 730 mW | SWITCHING | SILICON | TO-236 | R-PDSO-G3 | e3 | Not Qualified | 1 | 150 °C | 260 | 30 | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | Matte Tin (Sn) - annealed | GULL WING | DUAL | NTR4503NT1G | 2260 | compliant | Mainland China | EAR99 | 6.9 | CASE 318-08, 3 PIN | SOT-23 (TO-236) 3 LEAD | 3 | 318-08 | ||||||||
TN0106N3-G
Microchip Technology Inc
|
查询价格和库存 |
|
Yes | Active | N-CHANNEL | NO | SINGLE WITH BUILT-IN DIODE | 3 | 60 V | 1 | 350 mA | 3 Ω | LOGIC LEVEL COMPATIBLE | 8 pF | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 1 W | 1 W | SWITCHING | SILICON | TO-92 | O-PBCY-T3 | e3 | Not Qualified | 150 °C | -55 °C | PLASTIC/EPOXY | ROUND | CYLINDRICAL | MATTE TIN | THROUGH-HOLE | BOTTOM | TN0106N3-G | 2188 | compliant | Thailand | EAR99 | 8541.29.00.95 | 24.61 | GREEN PACKAGE-3 | ||||||||||
VN0106N3-G
Microchip Technology Inc
|
查询价格和库存 |
|
Yes | Active | N-CHANNEL | NO | SINGLE WITH BUILT-IN DIODE | 3 | 60 V | 1 | 350 mA | 3 Ω | 8 pF | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 1 W | 1 W | SWITCHING | SILICON | TO-92 | O-PBCY-T3 | e3 | Not Qualified | 150 °C | -55 °C | PLASTIC/EPOXY | ROUND | CYLINDRICAL | MATTE TIN | THROUGH-HOLE | BOTTOM | VN0106N3-G | 2188 | compliant | Thailand | EAR99 | 8541.29.00.95 | 24.61 | TO-92, 3 PIN | |||||||||||
VP0808L-G
Microchip Technology Inc
|
查询价格和库存 |
|
Yes | Active | P-CHANNEL | NO | SINGLE WITH BUILT-IN DIODE | 3 | 80 V | 1 | 280 mA | 5 Ω | HIGH INPUT IMPEDANCE | 25 pF | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 1 W | SWITCHING | SILICON | TO-92 | O-PBCY-T3 | e3 | Not Qualified | 150 °C | -55 °C | PLASTIC/EPOXY | ROUND | CYLINDRICAL | MATTE TIN | THROUGH-HOLE | BOTTOM | VP0808L-G | 2188 | compliant | Thailand | EAR99 | 8541.29.00.95 | 24.61 | CYLINDRICAL, O-PBCY-T3 | |||||||||||
BSS159NH6327XTSA2
Infineon Technologies AG
|
查询价格和库存 |
|
Yes | Yes | Active | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 3 | 60 V | 1 | 230 mA | 3.5 Ω | 5.9 pF | METAL-OXIDE SEMICONDUCTOR | DEPLETION MODE | SILICON | R-PDSO-G3 | e3 | Not Qualified | 1 | NOT SPECIFIED | NOT SPECIFIED | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | Tin (Sn) | GULL WING | DUAL | BSS159NH6327XTSA2 | 2065 | compliant | EAR99 | 6.5 | SMALL OUTLINE, R-PDSO-G3 | 3 | ||||||||||||||
2N7002T
onsemi
|
查询价格和库存 |
|
Yes | Active | N-CHANNEL | YES | SINGLE | 3 | 60 V | 1 | 115 mA | 2 Ω | 7 pF | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 200 mW | SWITCHING | SILICON | R-PDSO-F3 | e3 | 1 | 150 °C | 260 | 30 | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | Matte Tin (Sn) - annealed | FLAT | DUAL | 2N7002T | 2260 | compliant | South Korea | EAR99 | 6.5 | SC-89, SOT-523F, 3 PIN | 419BG |