型号 | Most Relevant | Technical | Compliance | Operating Conditions | Physical | Dimensions | Other | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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数据手册 |
单价/库存
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风险等级 | 是否无铅 |
是否Rohs认证
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生命周期 | 内存密度 | 内存宽度 |
部门规模
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组织 |
标称供电电压 (Vsup)
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最长访问时间 | 最大时钟频率 (fCLK) | 内存集成电路类型 | 其他特性 | 备用内存宽度 | 启动块 | 命令用户界面 | 通用闪存接口 | 数据轮询 | 数据保留时间-最小值 | 耐久性 | 功能数量 | 端口数量 | 部门数/规模 | 字数代码 | 字数 | 工作模式 | 输出特性 | 页面大小 | 并行/串行 |
编程电压
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就绪/忙碌
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串行总线类型
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最大待机电流
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最大压摆率
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最大供电电压 (Vsup)
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最小供电电压 (Vsup)
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技术 |
温度等级
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切换位
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类型
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写保护
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JESD-30 代码 |
认证状态
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JESD-609代码 | 湿度敏感等级 | 最高工作温度 | 最低工作温度 | 峰值回流温度(摄氏度) |
筛选级别
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处于峰值回流温度下的最长时间
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端子数量 | 封装主体材料 | 封装代码 | 封装等效代码 | 封装形状 | 封装形式 |
表面贴装
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端子面层
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端子形式
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端子节距
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端子位置
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座面最大高度
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长度 |
宽度
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mfrid
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是否符合REACH标准
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Country Of Origin
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YTEOL
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包装说明
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Source Content uid
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零件包装代码
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针数
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ECCN代码
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HTS代码
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Date Of Intro
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S25FL064LABMFI013
Infineon Technologies AG
|
查询价格和库存 |
|
Yes | Active | 67.1089 Mbit | 8 | 8MX8 | 3 V | 108 MHz | FLASH | 2 | 100000 Write/Erase Cycles | 1 | 8000000 | 8.3886 M | SYNCHRONOUS | 3-STATE | SERIAL | 3 V | SPI | 20 µA | 30 µA | 3.6 V | 2.7 V | CMOS | INDUSTRIAL | NOR TYPE | R-PDSO-G8 | e3 | 3 | 85 °C | -40 °C | 260 | NOT SPECIFIED | 8 | PLASTIC/EPOXY | SOP | SOP8,.3 | SQUARE | SMALL OUTLINE | YES | Matte Tin (Sn) | GULL WING | 1.27 mm | DUAL | 2.16 mm | 5.28 mm | 5.28 mm | 2065 | compliant | Mainland China, Taiwan | 6.8 | ||||||||||||||||||||||||||
S25FL512SAGMFI011
Infineon Technologies AG
|
查询价格和库存 |
|
Yes | Active | 512.7537 Mbit | 8 | 64MX8 | 3 V | 133 MHz | FLASH | 4 | 20 | 100000 Write/Erase Cycles | 1 | 64000000 | 64.0942 M | SYNCHRONOUS | 3-STATE | SERIAL | 3 V | SPI | 300 µA | 100 µA | 3.6 V | 2.7 V | CMOS | INDUSTRIAL | NOR TYPE | HARDWARE/SOFTWARE | R-PDSO-G16 | Not Qualified | e3 | 3 | 85 °C | -40 °C | 260 | 30 | 16 | PLASTIC/EPOXY | SOP | SOP16,.4 | RECTANGULAR | SMALL OUTLINE | YES | Matte Tin (Sn) | GULL WING | 1.27 mm | DUAL | 2.65 mm | 10.3 mm | 7.5 mm | 2065 | compliant | Mainland China, Taiwan | 9.8 | SOIC-16 | ||||||||||||||||||||||
S25FL064LABMFI011
Infineon Technologies AG
|
查询价格和库存 |
|
Yes | Active | 67.1089 Mbit | 8 | 8MX8 | 3 V | 108 MHz | FLASH | IT ALSO HAVE X1 MEMORY WIDTH | 2 | 1 | 8000000 | 8.3886 M | SYNCHRONOUS | 3-STATE | SERIAL | 3 V | 3.6 V | 2.7 V | CMOS | INDUSTRIAL | S-PDSO-G8 | e3 | 3 | 85 °C | -40 °C | NOT SPECIFIED | NOT SPECIFIED | 8 | PLASTIC/EPOXY | SOP | SQUARE | SMALL OUTLINE | YES | Matte Tin (Sn) | GULL WING | 1.27 mm | DUAL | 2.16 mm | 5.28 mm | 5.28 mm | 2065 | compliant | 6.8 | ||||||||||||||||||||||||||||||||
S29AL016J70BFI010
Infineon Technologies AG
|
查询价格和库存 |
|
Yes | Active | 16.7772 Mbit | 16 | 16K,8K,32K,64K | 1MX16 | 3 V | 70 ns | FLASH | TOP BOOT BLOCK | 8 | TOP | YES | YES | YES | 1 | 1,2,1,31 | 1000000 | 1.0486 M | ASYNCHRONOUS | PARALLEL | 3 V | YES | 5 µA | 30 µA | 3.6 V | 2.7 V | CMOS | INDUSTRIAL | YES | NOR TYPE | R-PBGA-B48 | Not Qualified | e1 | 3 | 85 °C | -40 °C | 260 | 40 | 48 | PLASTIC/EPOXY | VFBGA | BGA48,6X8,32 | RECTANGULAR | GRID ARRAY, VERY THIN PROFILE, FINE PITCH | YES | Tin/Silver/Copper (Sn96.5Ag3.0Cu0.5) | BALL | 800 µm | BOTTOM | 1 mm | 8.15 mm | 6.15 mm | 2065 | compliant | Mainland China, Taiwan, Thailand | 4.3 | |||||||||||||||||||
S25FL064LABMFA013
Infineon Technologies AG
|
查询价格和库存 |
|
Yes | Active | 67.1089 Mbit | 8 | 8MX8 | 3 V | 108 MHz | FLASH | IT ALSO HAVE X1 MEMORY WIDTH | 2 | 1 | 8000000 | 8.3886 M | SYNCHRONOUS | 3-STATE | SERIAL | 3 V | 3.6 V | 2.7 V | CMOS | INDUSTRIAL | S-PDSO-G8 | e3 | 3 | 85 °C | -40 °C | NOT SPECIFIED | AEC-Q100 | NOT SPECIFIED | 8 | PLASTIC/EPOXY | SOP | SQUARE | SMALL OUTLINE | YES | Matte Tin (Sn) | GULL WING | 1.27 mm | DUAL | 2.16 mm | 5.28 mm | 5.28 mm | 2065 | compliant | 6.8 | |||||||||||||||||||||||||||||||
S25FS128SAGMFI100
Infineon Technologies AG
|
查询价格和库存 |
|
Yes | Active | 134.2177 Mbit | 8 | 16MX8 | 1.8 V | 133 MHz | FLASH | 2 | 100000 Write/Erase Cycles | 1 | 16000000 | 16.7772 M | SYNCHRONOUS | 3-STATE | SERIAL | 1.8 V | QSPI | 300 µA | 100 µA | 2 V | 1.7 V | CMOS | INDUSTRIAL | NOR TYPE | HARDWARE/SOFTWARE | S-PDSO-G8 | e3 | 3 | 85 °C | -40 °C | NOT SPECIFIED | NOT SPECIFIED | 8 | PLASTIC/EPOXY | SOP | SOP8,.3 | SQUARE | SMALL OUTLINE | YES | Matte Tin (Sn) | GULL WING | 1.27 mm | DUAL | 2.16 mm | 5.28 mm | 5.28 mm | 2065 | compliant | 9.8 | SOIC-8 | |||||||||||||||||||||||||
SST49LF008A-33-4C-NHE
Microchip Technology Inc
|
查询价格和库存 |
|
Yes | Yes | Active | 8.3886 Mbit | 8 | 4K | 1MX8 | 3.3 V | 120 ns | 33 MHz | FLASH | TOP | YES | YES | 100 | 100000 Write/Erase Cycles | 1 | 1 | 256 | 1000000 | 1.0486 M | SYNCHRONOUS | 3-STATE | PARALLEL | 3.3 V | 100 µA | 24 µA | 3.6 V | 3 V | CMOS | OTHER | YES | NOR TYPE | R-PQCC-J32 | Not Qualified | e3 | 3 | 85 °C | 245 | 40 | 32 | PLASTIC/EPOXY | QCCJ | LDCC32,.5X.6 | RECTANGULAR | CHIP CARRIER | YES | MATTE TIN | J BEND | 1.27 mm | QUAD | 3.556 mm | 13.97 mm | 11.43 mm | 2188 | compliant | Thailand | 24.48 | ROHS COMPLIANT, PLASTIC, MS-016AE, LCC-32 | SST49LF008A-33-4C-NHE | QFJ | 32 | 3A991.B.1.A | 8542.32.00.51 | ||||||||||||
MT29F2G08ABAGAH4-IT:G
Micron Technology Inc
|
查询价格和库存 |
|
Active | FLASH | 3.3 V | SLC NAND TYPE | e1 | NOT SPECIFIED | NOT SPECIFIED | Tin/Silver/Copper (Sn/Ag/Cu) | 2190 | compliant | 5.8 | EAR99 | 8542.32.00.51 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
SST49LF080A-33-4C-NHE-T
Microchip Technology Inc
|
查询价格和库存 |
|
Yes | Active | 8.3886 Mbit | 8 | 4K | 1MX8 | 3.3 V | 120 ns | 33 MHz | FLASH | TOP | YES | YES | 100 | 100000 Write/Erase Cycles | 1 | 1 | 256 | 1000000 | 1.0486 M | SYNCHRONOUS | 3-STATE | PARALLEL | 3.3 V | 100 µA | 24 µA | 3.6 V | 3 V | CMOS | OTHER | YES | NOR TYPE | R-PQCC-J32 | Not Qualified | e3 | 3 | 85 °C | 32 | PLASTIC/EPOXY | QCCJ | LDCC32,.5X.6 | RECTANGULAR | CHIP CARRIER | YES | MATTE TIN | J BEND | 1.27 mm | QUAD | 3.556 mm | 13.97 mm | 11.43 mm | 2188 | compliant | Thailand | 24.48 | SST49LF080A-33-4C-NHE-T | 3A991.B.1.A | 8542.32.00.51 | ||||||||||||||||||
MX29GL256FHXFI-90Q
Macronix International Co Ltd
|
查询价格和库存 |
|
Yes | Active | 268.4355 Mbit | 16 | 128K | 16MX16 | 3 V | 100 ns | FLASH | 8 | YES | YES | YES | 1 | 256 | 16000000 | 16.7772 M | ASYNCHRONOUS | 8/16 words | PARALLEL | 3 V | YES | 10 µA | 30 µA | 3.6 V | 2.7 V | CMOS | INDUSTRIAL | YES | NOR TYPE | R-PBGA-B64 | Not Qualified | 85 °C | -40 °C | NOT SPECIFIED | NOT SPECIFIED | 64 | PLASTIC/EPOXY | LBGA | BGA64,8X8,40 | RECTANGULAR | GRID ARRAY, LOW PROFILE | YES | BALL | 1 mm | BOTTOM | 1.4 mm | 13 mm | 11 mm | 4307504 | unknown | Taiwan | 5.66 | LBGA, BGA64,8X8,40 | BGA | 64 | EAR99 | 8542.32.00.51 | ||||||||||||||||||
W25Q64JVSSIQ
Winbond Electronics Corp
|
查询价格和库存 |
|
Yes | Active | 67.1089 Mbit | 8 | 8MX8 | 3 V | 133 MHz | FLASH | 2.7V TO 3V @ 104MHZ | 1 | 20 | 100000 Write/Erase Cycles | 1 | 8000000 | 8.3886 M | SYNCHRONOUS | 3-STATE | SERIAL | 3 V | SPI | 50 µA | 18 µA | 3.6 V | 3 V | CMOS | INDUSTRIAL | NOR TYPE | HARDWARE/SOFTWARE | S-PDSO-G8 | e3 | 3 | 85 °C | -40 °C | 260 | 30 | 8 | PLASTIC/EPOXY | SOP | SOP8,.3 | SQUARE | SMALL OUTLINE | YES | MATTE TIN | GULL WING | 1.27 mm | DUAL | 2.16 mm | 5.28 mm | 5.28 mm | 2558 | compliant | 5.6 | SOIC-8 | EAR99 | 8542.32.00.51 | |||||||||||||||||||||
SST39WF1601-70-4I-B3KE
Microchip Technology Inc
|
查询价格和库存 |
|
Yes | Yes | Active | 16.7772 Mbit | 16 | 2K | 1MX16 | 1.8 V | 70 ns | FLASH | BOTTOM BOOT-BLOCK | BOTTOM | YES | YES | YES | 100 | 100000 Write/Erase Cycles | 1 | 1 | 512 | 1000000 | 1.0486 M | ASYNCHRONOUS | 3-STATE | PARALLEL | 1.8 V | 40 µA | 25 µA | 1.95 V | 1.65 V | CMOS | INDUSTRIAL | YES | NOR TYPE | R-PBGA-B48 | Not Qualified | e1 | 3 | 85 °C | -40 °C | 260 | 40 | 48 | PLASTIC/EPOXY | TFBGA | BGA48,6X8,32 | RECTANGULAR | GRID ARRAY, THIN PROFILE, FINE PITCH | YES | Tin/Silver/Copper (Sn/Ag/Cu) | BALL | 800 µm | BOTTOM | 1.2 mm | 8 mm | 6 mm | 2188 | compliant | Philippines, Taiwan, Thailand | 24.48 | 6 X 8 MM, ROHS COMPLIANT, MO-210AB-1, TFBGA-48 | SST39WF1601-70-4I-B3KE | BGA | 48 | 3A991.B.1.A | 8542.32.00.51 | ||||||||||
SST39VF010-70-4I-WHE
Microchip Technology Inc
|
查询价格和库存 |
|
Yes | Yes | Active | 1.0486 Mbit | 8 | 4K | 128KX8 | 3 V | 70 ns | FLASH | YES | YES | 100 | 100000 Write/Erase Cycles | 1 | 1 | 32 | 128000 | 131.072 k | ASYNCHRONOUS | 3-STATE | PARALLEL | 3 V | 15 µA | 30 µA | 3.6 V | 2.7 V | CMOS | INDUSTRIAL | YES | NOR TYPE | R-PDSO-G32 | Not Qualified | e3 | 3 | 85 °C | -40 °C | 260 | 32 | PLASTIC/EPOXY | TSOP1 | TSSOP32,.56,20 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE | YES | MATTE TIN | GULL WING | 500 µm | DUAL | 1.2 mm | 12.4 mm | 8 mm | 2188 | compliant | Thailand | 24.48 | 8 X 14 MM, ROHS COMPLIANT, MO-142BA, TSOP1-32 | SST39VF010-70-4I-WHE | TSOP1 | 32 | 3A991.B.1.A | 8542.32.00.51 | ||||||||||||||
SST39WF1601-70-4C-B3KE
Microchip Technology Inc
|
查询价格和库存 |
|
Yes | Yes | Active | 16.7772 Mbit | 16 | 2K | 1MX16 | 1.8 V | 70 ns | FLASH | BOTTOM BOOT-BLOCK | BOTTOM | YES | YES | YES | 100 | 100000 Write/Erase Cycles | 1 | 1 | 512 | 1000000 | 1.0486 M | ASYNCHRONOUS | 3-STATE | PARALLEL | 1.8 V | 40 µA | 25 µA | 1.95 V | 1.65 V | CMOS | COMMERCIAL | YES | NOR TYPE | R-PBGA-B48 | Not Qualified | e1 | 3 | 70 °C | 260 | 40 | 48 | PLASTIC/EPOXY | TFBGA | BGA48,6X8,32 | RECTANGULAR | GRID ARRAY, THIN PROFILE, FINE PITCH | YES | Tin/Silver/Copper (Sn/Ag/Cu) | BALL | 800 µm | BOTTOM | 1.2 mm | 8 mm | 6 mm | 2188 | compliant | Philippines, Taiwan, Thailand | 24.48 | 6 X 8 MM, ROHS COMPLIANT, MO-210AB-1, TFBGA-48 | SST39WF1601-70-4C-B3KE | BGA | 48 | 3A991.B.1.A | 8542.32.00.51 | |||||||||||
MX29LV040CTI-70G
Macronix International Co Ltd
|
查询价格和库存 |
|
Yes | Yes | Active | 4.1943 Mbit | 8 | 64K | 512KX8 | 3 V | 70 ns | FLASH | YES | YES | YES | 1 | 8 | 512000 | 524.288 k | ASYNCHRONOUS | PARALLEL | 3 V | 5 µA | 30 µA | 3.6 V | 2.7 V | CMOS | INDUSTRIAL | YES | NOR TYPE | R-PDSO-G32 | Not Qualified | e6 | 3 | 85 °C | -40 °C | 32 | PLASTIC/EPOXY | TSOP1 | TSSOP32,.8,20 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE | YES | TIN BISMUTH | GULL WING | 500 µm | DUAL | 1.2 mm | 18.4 mm | 8 mm | 4307504 | unknown | Taiwan | 4.2 | TSOP1, TSSOP32,.8,20 | TSOP1 | 32 | 3A991.B.1.A | 8542.32.00.51 | |||||||||||||||||||
W25Q16JVSSIQ
Winbond Electronics Corp
|
查询价格和库存 |
|
Yes | Active | 16.7772 Mbit | 8 | 2MX8 | 3 V | 133 MHz | FLASH | 1 | 2000000 | 2.0972 M | SYNCHRONOUS | 3-STATE | SERIAL | 3 V | 3.6 V | 2.7 V | CMOS | INDUSTRIAL | S-PDSO-G8 | 85 °C | -40 °C | NOT SPECIFIED | NOT SPECIFIED | 8 | PLASTIC/EPOXY | SOP | SQUARE | SMALL OUTLINE | YES | GULL WING | 1.27 mm | DUAL | 2.16 mm | 5.23 mm | 5.23 mm | 2558 | compliant | 5.3 | SOIC-8 | EAR99 | 8542.32.00.51 | 2016-10-04 | |||||||||||||||||||||||||||||||||
MT29F2G08ABAEAWP-IT:E
Micron Technology Inc
|
查询价格和库存 |
|
Yes | Yes | Active | 2.1475 Gbit | 8 | 128K | 256MX8 | 3.3 V | FLASH | YES | NO | 10 | 100000 Write/Erase Cycles | 1 | 2K | 256000000 | 268.4355 M | ASYNCHRONOUS | 2K words | PARALLEL | YES | 100 µA | 35 µA | 3.6 V | 2.7 V | CMOS | INDUSTRIAL | NO | SLC NAND TYPE | R-PDSO-G48 | Not Qualified | e3 | 85 °C | -40 °C | 260 | 30 | 48 | PLASTIC/EPOXY | TSOP1 | TSSOP48,.8,20 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE | YES | Matte Tin (Sn) | GULL WING | 500 µm | DUAL | 1.2 mm | 18.4 mm | 12 mm | 2190 | compliant | 5 | TSOP1-48 | ||||||||||||||||||||||
MT29F2G08ABAEAWP:E
Micron Technology Inc
|
查询价格和库存 |
|
Yes | Active | 2.1475 Gbit | 8 | 128K | 256MX8 | 3.3 V | 25 ns | FLASH | YES | NO | 1 | 2K | 256000000 | 268.4355 M | ASYNCHRONOUS | 2K words | PARALLEL | 3.3 V | YES | 100 µA | 35 µA | 3.6 V | 2.7 V | CMOS | COMMERCIAL | NO | SLC NAND TYPE | R-PDSO-G48 | Not Qualified | e3 | 70 °C | 260 | 30 | 48 | PLASTIC/EPOXY | TSOP1 | TSSOP48,.8,20 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE | YES | MATTE TIN | GULL WING | 500 µm | DUAL | 1.2 mm | 18.4 mm | 12 mm | 2190 | compliant | 5 | PLASTIC, TSOP1-48 | EAR99 | 8542.32.00.51 | ||||||||||||||||||||||
SST39VF040-70-4C-WHE
Microchip Technology Inc
|
查询价格和库存 |
|
Yes | Yes | Active | 4.1943 Mbit | 8 | 4K | 512KX8 | 3 V | 70 ns | FLASH | YES | YES | 100 | 100000 Write/Erase Cycles | 1 | 1 | 128 | 512000 | 524.288 k | ASYNCHRONOUS | 3-STATE | PARALLEL | 3 V | 15 µA | 30 µA | 3.6 V | 2.7 V | CMOS | COMMERCIAL | YES | NOR TYPE | R-PDSO-G32 | Not Qualified | e3 | 3 | 70 °C | 260 | 40 | 32 | PLASTIC/EPOXY | TSOP1 | TSSOP32,.56,20 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE | YES | Matte Tin (Sn) | GULL WING | 500 µm | DUAL | 1.2 mm | 12.4 mm | 8 mm | 2188 | compliant | Thailand | 24.48 | 8 X 14 MM, ROHS COMPLIANT, MO-142BA, TSOP1-32 | SST39VF040-70-4C-WHE | TSOP1 | 32 | 3A991.B.1.A | 8542.32.00.51 | ||||||||||||||
SST39VF040-70-4I-WHE
Microchip Technology Inc
|
查询价格和库存 |
|
Yes | Yes | Active | 4.1943 Mbit | 8 | 4K | 512KX8 | 3 V | 70 ns | FLASH | YES | YES | 100 | 100000 Write/Erase Cycles | 1 | 1 | 128 | 512000 | 524.288 k | ASYNCHRONOUS | 3-STATE | PARALLEL | 3 V | 15 µA | 30 µA | 3.6 V | 2.7 V | CMOS | INDUSTRIAL | YES | NOR TYPE | R-PDSO-G32 | Not Qualified | e3 | 3 | 85 °C | -40 °C | 260 | 32 | PLASTIC/EPOXY | TSOP1 | TSSOP32,.56,20 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE | YES | MATTE TIN | GULL WING | 500 µm | DUAL | 1.2 mm | 12.4 mm | 8 mm | 2188 | compliant | Thailand | 24.48 | 8 X 14 MM, ROHS COMPLIANT, MO-142BA, TSOP1-32 | SST39VF040-70-4I-WHE | TSOP1 | 32 | 3A991.B.1.A | 8542.32.00.51 |