型号 | Most Relevant | Technical | Compliance | Operating Conditions | Physical | Other | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
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数据手册 |
单价/库存
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风险等级 | 是否无铅 | 生命周期 | 集电极-发射极最大电压 | 最大集电极电流 (IC) | 极性/信道类型 |
表面贴装
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配置 | 端子数量 | 最小漏源击穿电压 | 最高频带 | 元件数量 | 最小直流电流增益 (hFE) | 最大漏极电流 (ID) | 最大漏源导通电阻 |
标称过渡频率 (fT)
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其他特性 | 雪崩能效等级(Eas) | 基于收集器的最大容量 | 最大反馈电容 (Crss) | FET 技术 | 工作模式 | 最大功率耗散 (Abs) | 最大脉冲漏极电流 (IDM) |
晶体管应用
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晶体管元件材料
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最大关闭时间(toff)
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最大开启时间(吨)
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JEDEC-95代码 | JESD-30 代码 | JESD-609代码 | 认证状态 |
参考标准
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湿度敏感等级 | 最高工作温度 | 最低工作温度 | 峰值回流温度(摄氏度) |
处于峰值回流温度下的最长时间
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外壳连接 | 封装主体材料 | 封装形状 | 封装形式 |
端子面层
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端子形式
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端子位置
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Source Content uid
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mfrid
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零件包装代码
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包装说明
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针数
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制造商包装代码
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是否符合REACH标准
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Country Of Origin
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ECCN代码
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YTEOL
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HTS代码
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Date Of Intro
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MC1413BDR2G
onsemi
|
查询价格和库存 |
|
Yes | Active | 50 V | 500 mA | NPN | YES | COMPLEX | 16 | 7 | 1000 | LOGIC LEVEL COMPATIBLE | SWITCHING | SILICON | R-PDSO-G16 | e3 | Not Qualified | 1 | 150 °C | 260 | 30 | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | MATTE TIN | GULL WING | DUAL | MC1413BDR2G | 2260 | SOIC 16 LEAD | SOIC-16 | 16 | 751B-05 | compliant | Mainland China | EAR99 | 4 | ||||||||||||||||||||||
2N7002LT3G
onsemi
|
查询价格和库存 |
|
Yes | Active | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 3 | 60 V | 1 | 115 mA | 7.5 Ω | 5 pF | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 300 mW | SWITCHING | SILICON | TO-236 | R-PDSO-G3 | e3 | Not Qualified | 1 | 150 °C | -55 °C | 260 | 30 | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | Matte Tin (Sn) - annealed | GULL WING | DUAL | 2N7002LT3G | 2260 | SOT-23 (TO-236) 3 LEAD | 3 | 318-08 | compliant | Mainland China | EAR99 | 6.5 | ||||||||||||||||||
2N7002LT1G
onsemi
|
查询价格和库存 |
|
Yes | Active | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 3 | 60 V | 1 | 115 mA | 7.5 Ω | 5 pF | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 300 mW | SWITCHING | SILICON | TO-236 | R-PDSO-G3 | e3 | Not Qualified | 1 | 150 °C | -55 °C | 260 | 30 | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | Matte Tin (Sn) - annealed | GULL WING | DUAL | 2N7002LT1G | 2260 | SOT-23 (TO-236) 3 LEAD | 3 | 318-08 | compliant | Mainland China | EAR99 | 6.5 | 8541.21.00.95 | |||||||||||||||||
BSS138LT3G
onsemi
|
查询价格和库存 |
|
Yes | Active | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 3 | 50 V | 1 | 200 mA | 3.5 Ω | 5 pF | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 225 mW | SWITCHING | SILICON | TO-236 | R-PDSO-G3 | e3 | Not Qualified | 1 | 150 °C | -55 °C | 260 | 30 | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | Matte Tin (Sn) - annealed | GULL WING | DUAL | BSS138LT3G | 2260 | SOT-23 (TO-236) 3 LEAD | ROHS COMPLIANT, CASE 318-08, 3 PIN | 3 | 318-08 | compliant | Mainland China | EAR99 | 6.5 | |||||||||||||||||
2N3055
SPC Multicomp
|
查询价格和库存 |
|
Active | 60 V | 15 A | NPN | NO | SINGLE | 2 | 1 | 5 | 2.5 MHz | SWITCHING | SILICON | TO-3 | O-MBFM-P2 | 150 °C | -65 °C | COLLECTOR | METAL | ROUND | FLANGE MOUNT | PIN/PEG | BOTTOM | 4165152 | unknown | EAR99 | 4 | ||||||||||||||||||||||||||||||||
NVMFS5C430NLAFT1G
onsemi
|
查询价格和库存 |
|
Yes | Active | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 5 | 40 V | 1 | 2.2 mΩ | 493 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 900 A | SILICON | R-PDSO-F5 | e3 | AEC-Q101 | 1 | 175 °C | -55 °C | 260 | 30 | DRAIN | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | Matte Tin (Sn) - annealed | FLAT | DUAL | NVMFS5C430NLAFT1G | 2260 | SOP-8 | 488AA | not_compliant | Malaysia | EAR99 | 5.6 | 2017-02-24 | ||||||||||||||||||||
NVMFS5C404NLAFT1G
onsemi
|
查询价格和库存 |
|
Yes | Active | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 5 | 40 V | 1 | 370 A | 1 mΩ | 907 mJ | 79.8 pF | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 200 W | 900 A | SILICON | R-PDSO-F5 | e3 | AEC-Q101 | 1 | 175 °C | -55 °C | 260 | 30 | DRAIN | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | Matte Tin (Sn) - annealed | FLAT | DUAL | NVMFS5C404NLAFT1G | 2260 | SO-8FL, DFN5, 6 PIN | 506EZ | not_compliant | Malaysia | EAR99 | 5.6 | 2017-02-24 | |||||||||||||||||
BCP56-16T3G
onsemi
|
查询价格和库存 |
|
Yes | Active | 80 V | 1 A | NPN | YES | SINGLE | 4 | 1 | 100 | 130 MHz | 1.5 W | AMPLIFIER | SILICON | TO-261AA | R-PDSO-G4 | e3 | Not Qualified | 1 | 150 °C | -55 °C | 260 | 30 | COLLECTOR | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | Matte Tin (Sn) - annealed | GULL WING | DUAL | BCP56-16T3G | 2260 | SOT-223 (TO-261) 4 LEAD | HALOGEN FREE AND ROHS COMPLIANT, CASE 318E-04, TO-261, 4 PIN | 4 | 0.0318 | compliant | Malaysia | EAR99 | 4 | ||||||||||||||||||
NVMFS5C404NLWFAFT1G
onsemi
|
查询价格和库存 |
|
Yes | Active | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 5 | 40 V | 1 | 370 A | 1 mΩ | 907 mJ | 79.8 pF | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 200 W | 900 A | SILICON | R-PDSO-F5 | e3 | AEC-Q101 | 1 | 175 °C | -55 °C | 260 | 30 | DRAIN | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | Matte Tin (Sn) - annealed | FLAT | DUAL | NVMFS5C404NLWFAFT1G | 2260 | SO-8FL, DFN5, 6 PIN | 507BE | not_compliant | Malaysia | EAR99 | 5.6 | 2017-02-24 | |||||||||||||||||
BSS138LT1G
onsemi
|
查询价格和库存 |
|
Yes | Active | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 3 | 50 V | 1 | 200 mA | 3.5 Ω | 5 pF | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 225 mW | SWITCHING | SILICON | TO-236 | R-PDSO-G3 | e3 | Not Qualified | 1 | 150 °C | -55 °C | 260 | 30 | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | Matte Tin (Sn) - annealed | GULL WING | DUAL | BSS138LT1G | 2260 | SOT-23 (TO-236) 3 LEAD | ROHS COMPLIANT, CASE 318-08, 3 PIN | 3 | 318-08 | compliant | Mainland China | EAR99 | 6.5 | |||||||||||||||||
2N7002ET1G
onsemi
|
查询价格和库存 |
|
Yes | Active | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 3 | 60 V | 1 | 260 mA | 2.5 Ω | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 300 mW | SWITCHING | SILICON | TO-236 | R-PDSO-G3 | e3 | Not Qualified | 1 | 150 °C | -55 °C | 260 | 30 | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | Matte Tin (Sn) - annealed | GULL WING | DUAL | 2N7002ET1G | 2260 | SOT-23 (TO-236) 3 LEAD | HALOGEN FREE AND ROHS COMPLIANT, CASE 318-08, 3 PIN | 3 | 318-08 | compliant | Mainland China | EAR99 | 6.5 | ||||||||||||||||||
2N3904
SPC Multicomp
|
查询价格和库存 |
|
Active | 40 V | 200 mA | NPN | NO | SINGLE | 3 | 1 | 30 | 300 MHz | SWITCHING | SILICON | 250 ns | 70 ns | TO-92 | O-PBCY-W3 | 150 °C | -55 °C | PLASTIC/EPOXY | ROUND | CYLINDRICAL | WIRE | BOTTOM | 4165152 | unknown | EAR99 | 6.5 | |||||||||||||||||||||||||||||||
MMBTH10LT1G
onsemi
|
查询价格和库存 |
|
Yes | Active | 25 V | 25 mA | NPN | YES | SINGLE | 3 | ULTRA HIGH FREQUENCY BAND | 1 | 60 | 650 MHz | 0.7 pF | 300 mW | SILICON | TO-236 | R-PDSO-G3 | e3 | Not Qualified | 1 | 150 °C | 260 | 30 | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | Matte Tin (Sn) - annealed | GULL WING | DUAL | MMBTH10LT1G | 2260 | SOT-23 (TO-236) 3 LEAD | CASE 318-08, 3 PIN | 3 | 318-08 | compliant | Mainland China | EAR99 | 4 | 8541.21.00.95 | ||||||||||||||||||
MJD32CG
onsemi
|
查询价格和库存 |
|
Yes | Active | 100 V | 3 A | PNP | YES | SINGLE | 2 | 1 | 10 | 3 MHz | 15 W | AMPLIFIER | SILICON | R-PSSO-G2 | e3 | Not Qualified | 1 | 150 °C | -65 °C | 260 | 30 | COLLECTOR | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | Matte Tin (Sn) - annealed | GULL WING | SINGLE | MJD32CG | 2260 | DPAK (SINGLE GAUGE) TO-252 | DPAK-3 | 3 | 369C | not_compliant | Mainland China | EAR99 | 4 | 8541.29.00.95 | ||||||||||||||||||
NJVMJD44H11T4G
onsemi
|
查询价格和库存 |
|
Yes | Active | 80 V | 8 A | NPN | YES | SINGLE | 2 | 1 | 40 | 85 MHz | 20 W | SWITCHING | SILICON | R-PSSO-G2 | e3 | AEC-Q101 | 1 | 150 °C | -55 °C | 260 | 30 | COLLECTOR | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | Matte Tin (Sn) - annealed | GULL WING | SINGLE | NJVMJD44H11T4G | 2260 | DPAK (SINGLE GAUGE) TO-252 | DPAK-3/2 | 3 | 369C | not_compliant | Malaysia | EAR99 | 4 | |||||||||||||||||||
NVMFS5C460NLAFT1G
onsemi
|
查询价格和库存 |
|
Yes | Active | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 6 | 40 V | 1 | 78 A | 7.2 mΩ | 107 mJ | 25 pF | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 50 W | 396 A | SILICON | R-PDSO-F6 | e3 | AEC-Q101 | 1 | 175 °C | -55 °C | 260 | 30 | DRAIN | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | Matte Tin (Sn) - annealed | FLAT | DUAL | NVMFS5C460NLAFT1G | 2260 | SO-8FL, DFN5, 6 PIN | 488AA | not_compliant | Malaysia | EAR99 | 5.6 | 2017-02-24 | |||||||||||||||||
BS170-D75Z
onsemi
|
查询价格和库存 |
|
Yes | Active | N-CHANNEL | NO | SINGLE WITH BUILT-IN DIODE | 3 | 60 V | 1 | 500 mA | 5 Ω | 10 pF | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 830 mW | SWITCHING | SILICON | TO-92 | O-PBCY-T3 | e3 | Not Qualified | 150 °C | PLASTIC/EPOXY | ROUND | CYLINDRICAL | MATTE TIN | THROUGH-HOLE | BOTTOM | BS170-D75Z | 2260 | TO-92, 3 PIN | 135AR | compliant | Mainland China | EAR99 | 6.05 | |||||||||||||||||||||||
NJVMJD32CT4G
onsemi
|
查询价格和库存 |
|
Yes | Active | 100 V | 3 A | PNP | YES | SINGLE | 2 | 1 | 10 | 3 MHz | 15 W | SILICON | R-PSSO-G2 | e3 | AEC-Q101 | 1 | 150 °C | -65 °C | 260 | 30 | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | Matte Tin (Sn) - annealed | GULL WING | SINGLE | NJVMJD32CT4G | 2260 | DPAK (SINGLE GAUGE) TO-252 | DPAK-3/2 | 3 | 369C | not_compliant | Malaysia | EAR99 | 4 | |||||||||||||||||||||
MC1413DR2G
onsemi
|
查询价格和库存 |
|
Yes | Active | 50 V | 500 mA | NPN | YES | COMPLEX | 16 | 7 | 1000 | LOGIC LEVEL COMPATIBLE | SWITCHING | SILICON | R-PDSO-G16 | e3 | Not Qualified | 1 | 150 °C | 260 | 30 | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | MATTE TIN | GULL WING | DUAL | MC1413DR2G | 2260 | SOIC 16 LEAD | SOIC-16 | 16 | 751B-05 | compliant | Mainland China | EAR99 | 4 | ||||||||||||||||||||||
MJD44H11RLG
onsemi
|
查询价格和库存 |
|
Yes | Active | 80 V | 8 A | NPN | YES | SINGLE | 2 | 1 | 40 | 85 MHz | 20 W | SWITCHING | SILICON | R-PSSO-G2 | e3 | Not Qualified | 1 | 150 °C | 260 | 30 | COLLECTOR | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | Matte Tin (Sn) - annealed | GULL WING | SINGLE | MJD44H11RLG | 2260 | DPAK (SINGLE GAUGE) TO-252 | DPAK-3 | 3 | 369C | not_compliant | Mainland China | EAR99 | 4 |