型号 | Most Relevant | Technical | Compliance | Operating Conditions | Physical | Other | ||||||||||||||||||||||||||||||||||||||||||||
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数据手册 |
单价/库存
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风险等级 | 是否无铅 |
是否Rohs认证
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生命周期 | 极性/信道类型 |
表面贴装
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配置 | 端子数量 | 最小漏源击穿电压 | 元件数量 | 最大漏极电流 (ID) | 最大漏源导通电阻 | 其他特性 | 最大反馈电容 (Crss) | FET 技术 | 工作模式 | 功耗环境最大值 | 最大功率耗散 (Abs) |
晶体管应用
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晶体管元件材料
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JEDEC-95代码 | JESD-30 代码 | JESD-609代码 | 认证状态 |
参考标准
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湿度敏感等级 | 最高工作温度 | 最低工作温度 | 峰值回流温度(摄氏度) |
处于峰值回流温度下的最长时间
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封装主体材料 | 封装形状 | 封装形式 |
端子面层
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端子形式
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端子位置
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mfrid
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包装说明
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是否符合REACH标准
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ECCN代码
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YTEOL
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针数
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Country Of Origin
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零件包装代码
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Source Content uid
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制造商包装代码
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HTS代码
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SSM3K7002KFU,LF(T
Toshiba America Electronic Components
|
查询价格和库存 |
|
Active | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE AND RESISTOR | 3 | 60 V | 1 | 400 mA | 1.75 Ω | 1.3 pF | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 700 mW | SWITCHING | SILICON | R-PDSO-G3 | 150 °C | NOT SPECIFIED | NOT SPECIFIED | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | GULL WING | DUAL | 2484 | , | unknown | EAR99 | 6.5 | |||||||||||||||||||
2N7002TQ-7-F
Diodes Incorporated
|
查询价格和库存 |
|
Yes | Yes | Active | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 3 | 60 V | 1 | 115 mA | 7.5 mΩ | 5 pF | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 150 mW | SWITCHING | SILICON | R-PDSO-G3 | e3 | AEC-Q101; IATF 16949 | 1 | 150 °C | -55 °C | 260 | 30 | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | MATTE TIN | GULL WING | DUAL | 1926 | SOT-523, 3 PIN | compliant | EAR99 | 7.2 | ||||||||||||
2N7002K-7
Diodes Incorporated
|
查询价格和库存 |
|
Yes | Yes | Active | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 3 | 60 V | 1 | 300 mA | 2 Ω | HIGH RELIABILITY | 5 pF | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 350 mW | SWITCHING | SILICON | R-PDSO-G3 | e3 | Not Qualified | 1 | 150 °C | 260 | 30 | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | MATTE TIN | GULL WING | DUAL | 1926 | compliant | EAR99 | 6.5 | 3 | Mainland China | |||||||||||
BSS138Q-7-F
Diodes Incorporated
|
查询价格和库存 |
|
Yes | Yes | Active | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 3 | 50 V | 1 | 200 mA | 3.5 Ω | 8 pF | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 300 mW | SWITCHING | SILICON | R-PDSO-G3 | e3 | AEC-Q101; IATF 16949 | 1 | 150 °C | -55 °C | 260 | 30 | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | MATTE TIN | GULL WING | DUAL | 1926 | GREEN, PLASTIC PACKAGE-3 | compliant | EAR99 | 6.5 | ||||||||||||
BSS138TA
Diodes Incorporated
|
查询价格和库存 |
|
Yes | Yes | Active | N-CHANNEL | YES | SINGLE | 3 | 50 V | 1 | 200 mA | 3.5 Ω | 8 pF | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 360 mW | SWITCHING | SILICON | R-PDSO-G3 | e3 | Not Qualified | 1 | 150 °C | 260 | 30 | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | MATTE TIN | GULL WING | DUAL | 1926 | SOT-23, 3 PIN | compliant | EAR99 | 6.5 | 3 | Mainland China | SOT-23 | ||||||||||
J112-D74Z
onsemi
|
查询价格和库存 |
|
Yes | Active | N-CHANNEL | NO | SINGLE | 3 | 1 | 50 Ω | 5 pF | JUNCTION | DEPLETION MODE | 400 mW | SWITCHING | SILICON | TO-92 | O-PBCY-T3 | e3 | Not Qualified | 150 °C | PLASTIC/EPOXY | ROUND | CYLINDRICAL | MATTE TIN | THROUGH-HOLE | BOTTOM | 2260 | compliant | EAR99 | 6.05 | Mainland China | J112-D74Z | 135AR | ||||||||||||||||
BSS138-13-F
Diodes Incorporated
|
查询价格和库存 |
|
Yes | Active | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 3 | 50 V | 1 | 200 mA | 3.5 Ω | 8 pF | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 300 mW | SWITCHING | SILICON | R-PDSO-G3 | e3 | 1 | 150 °C | -55 °C | 260 | 30 | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | MATTE TIN | GULL WING | DUAL | 1926 | compliant | EAR99 | 6.5 | |||||||||||||||
2N7002DW-7-F
Diodes Incorporated
|
查询价格和库存 |
|
Yes | Yes | Active | N-CHANNEL | YES | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | 6 | 60 V | 2 | 115 mA | 7.5 Ω | HIGH RELIABILITY | 5 pF | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 200 mW | SWITCHING | SILICON | R-PDSO-G6 | e3 | Not Qualified | 1 | 150 °C | 260 | 30 | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | MATTE TIN | GULL WING | DUAL | 1926 | compliant | EAR99 | 6.5 | 6 | Mainland China | |||||||||||
2N7002-7-F
Diodes Incorporated
|
查询价格和库存 |
|
Yes | Yes | Active | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 3 | 60 V | 1 | 115 mA | 13.5 Ω | HIGH RELIABILITY, LOW THRESHOLD | 5 pF | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 300 mW | SWITCHING | SILICON | R-PDSO-G3 | e3 | Not Qualified | 1 | 150 °C | 260 | 30 | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | MATTE TIN | GULL WING | DUAL | 1926 | compliant | EAR99 | 6.5 | 3 | Mainland China | |||||||||||
2N7002L
onsemi
|
查询价格和库存 |
|
Yes | Active | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 3 | 60 V | 1 | 115 mA | 7.5 Ω | 5 pF | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | SWITCHING | SILICON | TO-236AB | R-PDSO-G3 | e3 | 1 | 150 °C | -55 °C | 260 | 30 | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | Matte Tin (Sn) - annealed | GULL WING | DUAL | 2260 | SOT-23, 3 PIN | compliant | EAR99 | 6.5 | Mainland China | 2N7002L | 318-08 | |||||||||||
2N7002E-7-F
Diodes Incorporated
|
查询价格和库存 |
|
Yes | Yes | Active | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 3 | 60 V | 1 | 250 mA | 3 Ω | 5 pF | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 540 mW | SWITCHING | SILICON | R-PDSO-G3 | e3 | Not Qualified | 1 | 150 °C | -55 °C | 260 | 30 | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | MATTE TIN | GULL WING | DUAL | 1926 | SOT-23, 3 PIN | compliant | EAR99 | 6.5 | 3 | Mainland China | ||||||||||
2N7002W-7-F
Diodes Incorporated
|
查询价格和库存 |
|
Yes | Yes | Active | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 3 | 60 V | 1 | 115 mA | 7.5 Ω | 5 pF | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 200 mW | SWITCHING | SILICON | R-PDSO-G3 | e3 | Not Qualified | 1 | 150 °C | -55 °C | 260 | 30 | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | MATTE TIN | GULL WING | DUAL | 1926 | compliant | EAR99 | 6.5 | 3 | Mainland China | |||||||||||
J112
onsemi
|
查询价格和库存 |
|
Yes | Active | N-CHANNEL | NO | SINGLE | 3 | 1 | 50 Ω | 5 pF | JUNCTION | DEPLETION MODE | 400 mW | CHOPPER | SILICON | TO-92 | O-PBCY-T3 | e3 | Not Qualified | 150 °C | 240 | 30 | PLASTIC/EPOXY | ROUND | CYLINDRICAL | Matte Tin (Sn) - annealed | THROUGH-HOLE | BOTTOM | 2260 | TO-226, 3 PIN | compliant | EAR99 | 6.05 | 3 | Mainland China | TO-92 | J112 | 135AN | |||||||||||
J112-D26Z
onsemi
|
查询价格和库存 |
|
Yes | Active | N-CHANNEL | NO | SINGLE | 3 | 1 | 50 Ω | 5 pF | JUNCTION | DEPLETION MODE | 400 mW | SWITCHING | SILICON | TO-92 | O-PBCY-T3 | e3 | Not Qualified | 150 °C | PLASTIC/EPOXY | ROUND | CYLINDRICAL | MATTE TIN | THROUGH-HOLE | BOTTOM | 2260 | compliant | EAR99 | 6.05 | Mainland China | J112-D26Z | 135AR | ||||||||||||||||
BSS84DW-7-F
Diodes Incorporated
|
查询价格和库存 |
|
Yes | Yes | Active | P-CHANNEL | YES | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | 6 | 50 V | 2 | 130 mA | 10 Ω | 12 pF | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 300 mW | SWITCHING | SILICON | R-PDSO-G6 | e3 | Not Qualified | 1 | 150 °C | 260 | 30 | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | MATTE TIN | GULL WING | DUAL | 1926 | compliant | EAR99 | 6.5 | 6 | Mainland China | 8541.21.00.95 | |||||||||||
2N7002K
onsemi
|
查询价格和库存 |
|
Yes | Active | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 3 | 60 V | 1 | 115 mA | 2 Ω | 6 pF | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 350 W | SWITCHING | SILICON | TO-236AB | R-PDSO-G3 | e3 | Not Qualified | 1 | 150 °C | 260 | 30 | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | Matte Tin (Sn) - annealed | GULL WING | DUAL | 2260 | ROHS COMPLIANT, ULTRA SMALL PACKAGE-3 | compliant | EAR99 | 6.5 | Mainland China | 2N7002K | 318-08 | ||||||||||
2N7002-TP
Micro Commercial Components
|
查询价格和库存 |
|
Yes | Yes | Active | N-CHANNEL | YES | SINGLE | 3 | 60 V | 1 | 340 mA | 7.5 Ω | CMOS COMPATIBLE | 5 pF | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | SWITCHING | SILICON | R-PDSO-G3 | e3 | Not Qualified | 1 | 150 °C | 260 | 10 | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | MATTE TIN | GULL WING | DUAL | 2185 | PLASTIC PACKAGE-3 | compliant | EAR99 | 6.5 | 3 | Mainland China | |||||||||||
BSS138-7-F
Diodes Incorporated
|
查询价格和库存 |
|
Yes | Yes | Active | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 3 | 50 V | 1 | 200 mA | 3.5 Ω | HIGH RELIABILITY, LOW THRESHOLD | 8 pF | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 300 mW | SWITCHING | SILICON | R-PDSO-G3 | e3 | Not Qualified | 1 | 150 °C | 260 | 30 | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | MATTE TIN | GULL WING | DUAL | 1926 | compliant | EAR99 | 6.5 | 3 | Mainland China | |||||||||||
NTR1P02LT3G
onsemi
|
查询价格和库存 |
|
Yes | Active | P-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 3 | 20 V | 1 | 1.3 A | 220 mΩ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 400 mW | SWITCHING | SILICON | TO-236 | R-PDSO-G3 | e3 | Not Qualified | 1 | 150 °C | -55 °C | 260 | 40 | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | Matte Tin (Sn) - annealed | GULL WING | DUAL | 2260 | HALOGEN FREE AND LEAD FREE, MINIATURE, CASE 318-08, 3 PIN | compliant | EAR99 | 6.9 | 3 | Mainland China | SOT-23 (TO-236) 3 LEAD | NTR1P02LT3G | 318-08 | ||||||||
2N7002K-T1-GE3
Vishay Intertechnologies
|
查询价格和库存 |
|
Yes | Active | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 3 | 60 V | 1 | 300 mA | 4 Ω | LOW THRESHOLD, ESD PROTECTION, FAST SWITCHING | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 350 mW | 350 mW | SWITCHING | SILICON | TO-236AB | R-PDSO-G3 | e3 | Not Qualified | 1 | 150 °C | -55 °C | 260 | 30 | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | MATTE TIN | GULL WING | DUAL | 2516 | SOT-23, 3 PIN | compliant | EAR99 | 6.5 | 8541.21.00.95 |