型号 | Most Relevant | Technical | Compliance | Operating Conditions | Physical | Dimensions | Other | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
数据手册 |
单价/库存
|
风险等级 | 是否无铅 |
是否Rohs认证
|
生命周期 | 内存密度 | 内存宽度 | 组织 |
标称供电电压 (Vsup)
|
最长访问时间 | 最大时钟频率 (fCLK) |
刷新周期
|
访问模式 | 内存集成电路类型 | 其他特性 | I/O 类型 | 交错的突发长度 | 功能数量 | 端口数量 | 字数代码 | 字数 | 工作模式 | 输出特性 |
自我刷新
|
连续突发长度
|
最大待机电流
|
最大压摆率
|
最大供电电压 (Vsup)
|
最小供电电压 (Vsup)
|
技术 |
温度等级
|
JESD-30 代码 |
认证状态
|
JESD-609代码 | 湿度敏感等级 | 最高工作温度 | 最低工作温度 | 峰值回流温度(摄氏度) |
筛选级别
|
处于峰值回流温度下的最长时间
|
端子数量 | 封装主体材料 | 封装代码 | 封装等效代码 | 封装形状 | 封装形式 |
表面贴装
|
端子面层
|
端子形式
|
端子节距
|
端子位置
|
座面最大高度
|
长度 |
宽度
|
mfrid
|
包装说明
|
是否符合REACH标准
|
Country Of Origin
|
ECCN代码
|
HTS代码
|
YTEOL
|
零件包装代码
|
针数
|
Date Of Intro
|
||
IS42S16320F-7TL-TR
Integrated Silicon Solution Inc
|
查询价格和库存 |
|
Yes | Yes | Active | 536.8709 Mbit | 16 | 32MX16 | 3.3 V | 5.4 ns | FOUR BANK PAGE BURST | SYNCHRONOUS DRAM | AUTO/SELF REFRESH | 1 | 1 | 32000000 | 33.5544 M | SYNCHRONOUS | YES | 3.6 V | 3 V | CMOS | COMMERCIAL | R-PDSO-G54 | 70 °C | NOT SPECIFIED | NOT SPECIFIED | 54 | PLASTIC/EPOXY | TSOP2 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE | YES | GULL WING | 800 µm | DUAL | 1.2 mm | 22.22 mm | 10.16 mm | 2070 | TSOP2, | compliant | Mainland China, Taiwan | EAR99 | 8542.32.00.28 | 4 | ||||||||||||||||||||
AS4C4M32S-7BCN
Alliance Memory Inc
|
查询价格和库存 |
|
Yes | Yes | Active | 134.2177 Mbit | 32 | 4MX32 | 3.3 V | 5.4 ns | FOUR BANK PAGE BURST | SYNCHRONOUS DRAM | AUTO/SELF REFRESH | 1 | 1 | 4000000 | 4.1943 M | SYNCHRONOUS | YES | 3.6 V | 3 V | CMOS | COMMERCIAL | R-PBGA-B90 | 3 | 70 °C | 90 | PLASTIC/EPOXY | TFBGA | RECTANGULAR | GRID ARRAY, THIN PROFILE, FINE PITCH | YES | BALL | 800 µm | BOTTOM | 1.2 mm | 13 mm | 8 mm | 1689 | 8 X 13 MM, 1.20 MM HEIGHT, HALOGEN FREE AND ROHS COMPLIANT, TFBGA-90 | compliant | Taiwan | EAR99 | 8542.32.00.02 | 4 | BGA | 90 | |||||||||||||||||||
W949D2CBJX5E
Winbond Electronics Corp
|
查询价格和库存 |
|
Yes | Active | 536.8709 Mbit | 32 | 16MX32 | 1.8 V | 5 ns | 200 MHz | 8192 | FOUR BANK PAGE BURST | LPDDR1 DRAM | AUTO/SELF REFRESH | COMMON | 2,4,8,16 | 1 | 1 | 16000000 | 16.7772 M | SYNCHRONOUS | 3-STATE | YES | 2,4,8,16 | 10 µA | 75 µA | 1.95 V | 1.7 V | CMOS | OTHER | R-PBGA-B90 | Not Qualified | 85 °C | -25 °C | NOT SPECIFIED | NOT SPECIFIED | 90 | PLASTIC/EPOXY | TFBGA | BGA90,9X15,32 | RECTANGULAR | GRID ARRAY, THIN PROFILE, FINE PITCH | YES | BALL | 800 µm | BOTTOM | 1.025 mm | 13 mm | 8 mm | 2558 | 8 X 13 MM, 0.80 MM PITCH, HALOGEN FREE AND LEAD FREE, VFBGA-90 | compliant | EAR99 | 8542.32.00.28 | 4.65 | BGA | 90 | |||||||||
MT48LC4M16A2P-6A:J
Micron Technology Inc
|
查询价格和库存 |
|
Yes | Active | 67.1089 Mbit | 16 | 4MX16 | 3.3 V | 5.4 ns | 167 MHz | 4096 | FOUR BANK PAGE BURST | SYNCHRONOUS DRAM | AUTO/SELF REFRESH | COMMON | 1,2,4,8 | 1 | 1 | 4000000 | 4.1943 M | SYNCHRONOUS | 3-STATE | YES | 1,2,4,8,FP | 2.5 mA | 150 µA | 3.6 V | 3 V | CMOS | COMMERCIAL | R-PDSO-G54 | Not Qualified | e3 | 70 °C | 260 | 30 | 54 | PLASTIC/EPOXY | TSOP2 | TSOP54,.46,32 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE | YES | MATTE TIN | GULL WING | 800 µm | DUAL | 1.2 mm | 22.22 mm | 10.16 mm | 2190 | 0.400 INCH, LEAD FREE, PLASTIC, TSOP2-54 | compliant | 4 | ||||||||||||
AS4C4M16SA-7TCNTR
Alliance Memory Inc
|
查询价格和库存 |
|
Yes | Active | 67.1089 Mbit | 16 | 4MX16 | 3.3 V | 5.4 ns | FOUR BANK PAGE BURST | SYNCHRONOUS DRAM | AUTO/SELF REFRESH | 1 | 1 | 4000000 | 4.1943 M | SYNCHRONOUS | YES | 3.6 V | 3 V | CMOS | COMMERCIAL | R-PDSO-G54 | e3 | 3 | 70 °C | 54 | PLASTIC/EPOXY | TSOP2 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE | YES | Tin (Sn) | GULL WING | 800 µm | DUAL | 1.2 mm | 22.22 mm | 10.16 mm | 1689 | TSOP2-54 | compliant | Taiwan | EAR99 | 8542.32.00.02 | 4 | 2018-10-04 | |||||||||||||||||||
IS43DR16640C-25DBLI
Integrated Silicon Solution Inc
|
查询价格和库存 |
|
Yes | Active | 1.0737 Gbit | 16 | 64MX16 | 1.8 V | 400 ps | 400 MHz | 8192 | MULTI BANK PAGE BURST | DDR2 DRAM | AUTO/SELF REFRESH | COMMON | 4,8 | 1 | 1 | 64000000 | 67.1089 M | SYNCHRONOUS | 3-STATE | YES | 4,8 | 25 mA | 280 µA | 1.9 V | 1.7 V | CMOS | INDUSTRIAL | R-PBGA-B84 | Not Qualified | e1 | 3 | 85 °C | -40 °C | 84 | PLASTIC/EPOXY | TFBGA | BGA84,9X15,32 | RECTANGULAR | GRID ARRAY, THIN PROFILE, FINE PITCH | YES | Tin/Silver/Copper (Sn/Ag/Cu) | BALL | 800 µm | BOTTOM | 1.2 mm | 12.5 mm | 8 mm | 2070 | TFBGA, BGA84,9X15,32 | compliant | Mainland China, Taiwan | EAR99 | 8542.32.00.32 | 4.75 | |||||||||
MT41J128M16JT-125:K
Micron Technology Inc
|
查询价格和库存 |
|
Yes | Yes | Active | 2.1475 Gbit | 16 | 128MX16 | 1.5 V | 225 ps | 800 MHz | 8192 | MULTI BANK PAGE BURST | DDR3 DRAM | AUTO/SELF REFRESH | COMMON | 8 | 1 | 1 | 128000000 | 134.2177 M | SYNCHRONOUS | 3-STATE | YES | 8 | 12 mA | 202 µA | 1.575 V | 1.425 V | CMOS | OTHER | R-PBGA-B96 | Not Qualified | e1 | 3 | 85 °C | 260 | 30 | 96 | PLASTIC/EPOXY | TFBGA | BGA96,9X16,32 | RECTANGULAR | GRID ARRAY, THIN PROFILE, FINE PITCH | YES | Tin/Silver/Copper (Sn/Ag/Cu) | BALL | 800 µm | BOTTOM | 1.2 mm | 14 mm | 8 mm | 2190 | TFBGA, BGA96,9X16,32 | compliant | EAR99 | 8542.32.00.36 | 5 | BGA | 96 | ||||||
AS4C16M16SA-6TAN
Alliance Memory Inc
|
查询价格和库存 |
|
Yes | Yes | Active | 268.4355 Mbit | 16 | 16MX16 | 3.3 V | 5 ns | FOUR BANK PAGE BURST | SYNCHRONOUS DRAM | AUTO/SELF REFRESH | 1 | 1 | 16000000 | 16.7772 M | SYNCHRONOUS | YES | 3.6 V | 3 V | CMOS | INDUSTRIAL | R-PDSO-G54 | 3 | 105 °C | -40 °C | AEC-Q100 | 54 | PLASTIC/EPOXY | TSOP2 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE | YES | GULL WING | 800 µm | DUAL | 1.2 mm | 22.22 mm | 10.16 mm | 1689 | TSOP2-54 | compliant | Taiwan | EAR99 | 8542.32.00.24 | 4 | |||||||||||||||||||
IS42S16800F-6BLI
Integrated Silicon Solution Inc
|
查询价格和库存 |
|
Yes | End Of Life | 134.2177 Mbit | 16 | 8MX16 | 3.3 V | 5.4 ns | 166 MHz | 4096 | FOUR BANK PAGE BURST | SYNCHRONOUS DRAM | AUTO/SELF REFRESH | COMMON | 1,2,4,8 | 1 | 1 | 8000000 | 8.3886 M | SYNCHRONOUS | 3-STATE | YES | 1,2,4,8,FP | 2 mA | 120 µA | 3.6 V | 3 V | CMOS | INDUSTRIAL | S-PBGA-B54 | Not Qualified | 85 °C | -40 °C | 54 | PLASTIC/EPOXY | TFBGA | BGA54,9X9,32 | SQUARE | GRID ARRAY, THIN PROFILE, FINE PITCH | YES | BALL | 800 µm | BOTTOM | 1.2 mm | 8 mm | 8 mm | 2070 | TFBGA-54 | compliant | Mainland China, Taiwan | EAR99 | 8542.32.00.02 | 0.89 | BGA | 54 | ||||||||||
IS45S16160J-6BLA1-TR
Integrated Silicon Solution Inc
|
查询价格和库存 |
|
Yes | Yes | Active | 268.4355 Mbit | 16 | 16MX16 | 3.3 V | 5.4 ns | 166 MHz | FOUR BANK PAGE BURST | SYNCHRONOUS DRAM | PROGRAMMABLE CAS LATENCY; AUTO/SELF REFRESH | 1 | 1 | 16000000 | 16.7772 M | SYNCHRONOUS | YES | 100 µA | 3.6 V | 3 V | CMOS | INDUSTRIAL | S-PBGA-B54 | 85 °C | -40 °C | NOT SPECIFIED | NOT SPECIFIED | 54 | PLASTIC/EPOXY | TFBGA | SQUARE | GRID ARRAY, THIN PROFILE, FINE PITCH | YES | BALL | 800 µm | BOTTOM | 1.2 mm | 8 mm | 8 mm | 2070 | TFBGA, | compliant | Mainland China, Taiwan | EAR99 | 8542.32.00.24 | 4 | |||||||||||||||||
IS43TR16256BL-107MBLI
Integrated Silicon Solution Inc
|
查询价格和库存 |
|
Active | 4.295 Gbit | 16 | 256MX16 | 1.35 V | MULTI BANK PAGE BURST | DDR3 DRAM | AUTO/SELF REFRESH | 1 | 1 | 256000000 | 268.4355 M | SYNCHRONOUS | YES | 1.45 V | 1.283 V | CMOS | INDUSTRIAL | R-PBGA-B96 | e1 | 3 | 95 °C | -40 °C | 260 | 30 | 96 | PLASTIC/EPOXY | TFBGA | RECTANGULAR | GRID ARRAY, THIN PROFILE, FINE PITCH | YES | TIN SILVER COPPER | BALL | 800 µm | BOTTOM | 1.2 mm | 13 mm | 9 mm | 2070 | TFBGA, | unknown | Mainland China, Taiwan | EAR99 | 8542.32.00.36 | 5 | |||||||||||||||||||
IS43R86400F-5TL
Integrated Silicon Solution Inc
|
查询价格和库存 |
|
Yes | Active | 536.8709 Mbit | 8 | 64MX8 | 2.5 V | 700 ps | FOUR BANK PAGE BURST | DDR1 DRAM | PROGRAMMABLE CAS LATENCY; AUTO/SELF REFRESH | 1 | 1 | 64000000 | 67.1089 M | SYNCHRONOUS | YES | 2.7 V | 2.3 V | CMOS | COMMERCIAL | R-PDSO-G66 | 70 °C | NOT SPECIFIED | NOT SPECIFIED | 66 | PLASTIC/EPOXY | TSOP2 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE | YES | GULL WING | 650 µm | DUAL | 1.2 mm | 22.22 mm | 10.16 mm | 2070 | TSOP2, | compliant | Mainland China, Taiwan | EAR99 | 8542.32.00.28 | 4.25 | |||||||||||||||||||||
IS43R86400F-5TLI
Integrated Silicon Solution Inc
|
查询价格和库存 |
|
Yes | Active | 536.8709 Mbit | 8 | 64MX8 | 2.5 V | 700 ps | FOUR BANK PAGE BURST | DDR1 DRAM | PROGRAMMABLE CAS LATENCY; AUTO/SELF REFRESH | 1 | 1 | 64000000 | 67.1089 M | SYNCHRONOUS | YES | 2.7 V | 2.3 V | CMOS | INDUSTRIAL | R-PDSO-G66 | 85 °C | -40 °C | NOT SPECIFIED | NOT SPECIFIED | 66 | PLASTIC/EPOXY | TSOP2 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE | YES | GULL WING | 650 µm | DUAL | 1.2 mm | 22.22 mm | 10.16 mm | 2070 | TSOP2, | compliant | Mainland China, Taiwan | EAR99 | 8542.32.00.28 | 4.25 | ||||||||||||||||||||
MT46V32M16P-5B:J
Micron Technology Inc
|
查询价格和库存 |
|
Yes | Yes | Active | 536.8709 Mbit | 16 | 32MX16 | 2.6 V | 700 ps | 200 MHz | 8192 | FOUR BANK PAGE BURST | DDR1 DRAM | AUTO/SELF REFRESH | COMMON | 2,4,8 | 1 | 1 | 32000000 | 33.5544 M | SYNCHRONOUS | 3-STATE | YES | 2,4,8 | 5 mA | 230 µA | 2.7 V | 2.5 V | CMOS | COMMERCIAL | R-PDSO-G66 | Not Qualified | e3 | 3 | 70 °C | 260 | 30 | 66 | PLASTIC/EPOXY | TSSOP | TSSOP66,.46 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE, SHRINK PITCH | YES | Matte Tin (Sn) | GULL WING | 650 µm | DUAL | 1.2 mm | 22.22 mm | 10.16 mm | 2190 | TSSOP, TSSOP66,.46 | compliant | EAR99 | 8542.32.00.28 | 4.25 | TSOP | 66 | ||||||
IS43DR16640C-25DBL
Integrated Silicon Solution Inc
|
查询价格和库存 |
|
Yes | Active | 1.0737 Gbit | 16 | 64MX16 | 1.8 V | 400 ps | 400 MHz | 8192 | MULTI BANK PAGE BURST | DDR2 DRAM | AUTO/SELF REFRESH | COMMON | 4,8 | 1 | 1 | 64000000 | 67.1089 M | SYNCHRONOUS | 3-STATE | YES | 4,8 | 25 mA | 280 µA | 1.9 V | 1.7 V | CMOS | OTHER | R-PBGA-B84 | Not Qualified | e1 | 3 | 85 °C | 84 | PLASTIC/EPOXY | TFBGA | BGA84,9X15,32 | RECTANGULAR | GRID ARRAY, THIN PROFILE, FINE PITCH | YES | Tin/Silver/Copper (Sn/Ag/Cu) | BALL | 800 µm | BOTTOM | 1.2 mm | 12.5 mm | 8 mm | 2070 | TFBGA, BGA84,9X15,32 | compliant | Mainland China, Taiwan | EAR99 | 8542.32.00.32 | 4.75 | ||||||||||
IS42S16800F-6BL
Integrated Silicon Solution Inc
|
查询价格和库存 |
|
Yes | End Of Life | 134.2177 Mbit | 16 | 8MX16 | 3.3 V | 5.4 ns | 166 MHz | 4096 | FOUR BANK PAGE BURST | SYNCHRONOUS DRAM | AUTO/SELF REFRESH | COMMON | 1,2,4,8 | 1 | 1 | 8000000 | 8.3886 M | SYNCHRONOUS | 3-STATE | YES | 1,2,4,8,FP | 2 mA | 120 µA | 3.6 V | 3 V | CMOS | COMMERCIAL | S-PBGA-B54 | Not Qualified | 70 °C | 54 | PLASTIC/EPOXY | TFBGA | BGA54,9X9,32 | SQUARE | GRID ARRAY, THIN PROFILE, FINE PITCH | YES | BALL | 800 µm | BOTTOM | 1.2 mm | 8 mm | 8 mm | 2070 | TFBGA, BGA54,9X9,32 | compliant | Mainland China, Taiwan | EAR99 | 8542.32.00.02 | 0.89 | BGA | 54 | |||||||||||
IS42S16320F-7TL
Integrated Silicon Solution Inc
|
查询价格和库存 |
|
Yes | Active | 536.8709 Mbit | 16 | 32MX16 | 3.3 V | 5.4 ns | 143 MHz | 8192 | FOUR BANK PAGE BURST | SYNCHRONOUS DRAM | PROGRAMMABLE CAS LATENCY; AUTO/SELF REFRESH | COMMON | 1,2,4,8 | 1 | 1 | 32000000 | 33.5544 M | SYNCHRONOUS | 3-STATE | YES | 1,2,4,8,FP | 4 mA | 160 µA | 3.6 V | 3 V | CMOS | COMMERCIAL | R-PDSO-G54 | Not Qualified | 70 °C | 54 | PLASTIC/EPOXY | TSOP2 | TSOP54,.46,32 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE | YES | GULL WING | 800 µm | DUAL | 1.2 mm | 22.22 mm | 10.16 mm | 2070 | TSOP2, TSOP54,.46,32 | compliant | Mainland China, Taiwan | EAR99 | 8542.32.00.28 | 4 | |||||||||||||
MT48LC64M8A2P-75IT:C
Alliance Memory Inc
|
查询价格和库存 |
|
Active | 536.8709 Mbit | 8 | 64MX8 | 3.3 V | 5.4 ns | FOUR BANK PAGE BURST | SYNCHRONOUS DRAM | AUTO/SELF REFRESH | 1 | 1 | 64000000 | 67.1089 M | SYNCHRONOUS | YES | 3.6 V | 3 V | CMOS | INDUSTRIAL | R-PDSO-G54 | e3 | 85 °C | -40 °C | 54 | PLASTIC/EPOXY | TSOP2 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE | YES | MATTE TIN | GULL WING | 800 µm | DUAL | 1.2 mm | 22.22 mm | 10.16 mm | 1689 | TSOP2, | compliant | EAR99 | 8542.32.00.28 | 4 | ||||||||||||||||||||||
AS4C512M16D3LA-10BCN
Alliance Memory Inc
|
查询价格和库存 |
|
Yes | Active | 8.5899 Gbit | 16 | 512MX16 | 1.35 V | MULTI BANK PAGE BURST | DDR DRAM MODULE | AUTO/SELF REFRESH | 1 | 1 | 512000000 | 536.8709 M | SYNCHRONOUS | YES | 1.425 V | 1.275 V | CMOS | OTHER | R-PBGA-B96 | 3 | 95 °C | 96 | PLASTIC/EPOXY | TFBGA | RECTANGULAR | GRID ARRAY, THIN PROFILE, FINE PITCH | YES | BALL | 800 µm | BOTTOM | 1.2 mm | 13.5 mm | 9 mm | 1689 | FBGA-96 | compliant | Taiwan | EAR99 | 8542.32.00.36 | 5.15 | 2019-03-07 | ||||||||||||||||||||||
IS42S16800F-7BLI
Integrated Silicon Solution Inc
|
查询价格和库存 |
|
Yes | End Of Life | 134.2177 Mbit | 16 | 8MX16 | 3.3 V | 5.4 ns | 143 MHz | 4096 | FOUR BANK PAGE BURST | SYNCHRONOUS DRAM | AUTO/SELF REFRESH | COMMON | 1,2,4,8 | 1 | 1 | 8000000 | 8.3886 M | SYNCHRONOUS | 3-STATE | YES | 1,2,4,8,FP | 2 mA | 100 µA | 3.6 V | 3 V | CMOS | INDUSTRIAL | S-PBGA-B54 | Not Qualified | 85 °C | -40 °C | 54 | PLASTIC/EPOXY | TFBGA | BGA54,9X9,32 | SQUARE | GRID ARRAY, THIN PROFILE, FINE PITCH | YES | BALL | 800 µm | BOTTOM | 1.2 mm | 8 mm | 8 mm | 2070 | TFBGA, BGA54,9X9,32 | compliant | Mainland China, Taiwan | EAR99 | 8542.32.00.02 | 0.89 | BGA | 54 |