无法从文档中提取型号,请重试

功率场效应晶体管:

180,231 个筛选结果
功率场效应晶体管(VF)又称VMOS场效应管。在实际应用中,它有着比晶体管和MOS场效应管更好的特性。
IGBT (26,758)
型号
-
-
-
-
配置 (50)
-
最小漏源击穿电压 (50)
-
-
最大漏极电流 (ID) (50)
-
最大漏源导通电阻 (50)
-
-
-
-
制造商 (50)
元件数量 (9)
-
端子数量 (40)
-
-
极性/信道类型 (5)
-
-
-
-
型号
型号 Most Relevant Technical Compliance Operating Conditions Physical Other
数据手册 单价/库存
风险等级 是否无铅 是否Rohs认证
生命周期 极性/信道类型 表面贴装
配置 端子数量 最小漏源击穿电压 元件数量 最大漏极电流 (ID) 最大漏源导通电阻 其他特性 雪崩能效等级(Eas) 最大反馈电容 (Crss) FET 技术 工作模式 功耗环境最大值 最大功率耗散 (Abs) 最大脉冲漏极电流 (IDM) 晶体管应用
晶体管元件材料
最大关闭时间(toff)
最大开启时间(吨)
JEDEC-95代码 JESD-30 代码 JESD-609代码 认证状态 参考标准
湿度敏感等级 最高工作温度 最低工作温度 峰值回流温度(摄氏度) 处于峰值回流温度下的最长时间
外壳连接 封装主体材料 封装形状 封装形式 端子面层
端子形式
端子位置
Source Content uid
mfrid
是否符合REACH标准
ECCN代码
YTEOL
包装说明
零件包装代码
针数
制造商包装代码
Country Of Origin
HTS代码
IRF1404STRLPBF
Infineon Technologies AG
查询价格和库存
Yes Active N-CHANNEL YES SINGLE WITH BUILT-IN DIODE 2 40 V 1 75 A 4 mΩ AVALANCHE RATED, HIGH RELIABILITY, ULTRA LOW RESISTANCE 519 mJ METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 650 A SWITCHING SILICON R-PSSO-G2 e3 Not Qualified 1 260 30 DRAIN PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE Matte Tin (Sn) - with Nickel (Ni) barrier GULL WING SINGLE IRF1404STRLPBF 2065 not_compliant EAR99 5.6
IRL540NSTRLPBF
Infineon Technologies AG
查询价格和库存
Yes Active N-CHANNEL YES SINGLE WITH BUILT-IN DIODE 2 100 V 1 36 A 53 mΩ AVALANCHE RATED, HIGH RELIABILITY 310 mJ METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 120 A SWITCHING SILICON R-PSSO-G2 e3 Not Qualified 1 260 30 DRAIN PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE Matte Tin (Sn) - with Nickel (Ni) barrier GULL WING SINGLE IRL540NSTRLPBF 2065 not_compliant EAR99 5.75 SMALL OUTLINE, R-PSSO-G2
NTD20N06T4G
onsemi
查询价格和库存
Yes Active N-CHANNEL YES SINGLE WITH BUILT-IN DIODE 2 60 V 1 20 A 46 mΩ 170 mJ 120 pF METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 60 W 60 W 60 A SWITCHING SILICON 140 ns 140 ns R-PSSO-G2 e3 Not Qualified 1 175 °C -55 °C 260 30 DRAIN PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE Matte Tin (Sn) - annealed GULL WING SINGLE NTD20N06T4G 2260 not_compliant EAR99 5.55 DPAK-3 DPAK (SINGLE GAUGE) TO-252 3 369C Mainland China, Malaysia, Vietnam 8541.29.00.95
IRL640SPBF
Vishay Intertechnologies
查询价格和库存
Yes Yes Active N-CHANNEL YES SINGLE WITH BUILT-IN DIODE 2 200 V 1 17 A 180 mΩ LOGIC LEVEL COMPATIBLE 580 mJ METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 125 W 68 A SWITCHING SILICON TO-263AB R-PSSO-G2 Not Qualified 3 150 °C DRAIN PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE GULL WING SINGLE 2516 compliant EAR99 5.97 SMALL OUTLINE, R-PSSO-G2 D2PAK 3
IRFR9024NTRLPBF
Infineon Technologies AG
查询价格和库存
Yes Active P-CHANNEL YES SINGLE WITH BUILT-IN DIODE 2 55 V 1 11 A 175 mΩ AVALANCHE RATED, HIGH RELIABILITY 62 mJ METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 38 W 44 A SWITCHING SILICON TO-252AA R-PSSO-G2 e3 Not Qualified 1 150 °C 260 30 DRAIN PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE Matte Tin (Sn) - with Nickel (Ni) barrier GULL WING SINGLE IRFR9024NTRLPBF 2065 not_compliant EAR99 5.4
IRFR5305TRLPBF
Infineon Technologies AG
查询价格和库存
Yes Active P-CHANNEL YES SINGLE WITH BUILT-IN DIODE 2 55 V 1 31 A 65 mΩ AVALANCHE RATED, HIGH RELIABILITY 280 mJ METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 110 W 110 A SWITCHING SILICON TO-252AA R-PSSO-G2 e3 Not Qualified 1 175 °C 260 30 DRAIN PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE Matte Tin (Sn) - with Nickel (Ni) barrier GULL WING SINGLE IRFR5305TRLPBF 2065 not_compliant EAR99 5.4
BUK9608-55B,118
Nexperia
查询价格和库存
Active N-CHANNEL YES SINGLE WITH BUILT-IN DIODE 2 55 V 1 75 A 9.3 mΩ LOGIC LEVEL COMPATIBLE 352 mJ METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 439 A SWITCHING SILICON R-PSSO-G2 e3 Not Qualified AEC-Q101 1 175 °C 245 30 DRAIN PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE TIN GULL WING SINGLE BUK9608-55B,118 229119436 not_compliant EAR99 5.6 SMALL OUTLINE, R-PSSO-G2 D2PAK 3 SOT404 Philippines
RFD14N05LSM
onsemi
查询价格和库存
Yes Active N-CHANNEL YES SINGLE WITH BUILT-IN DIODE 2 50 V 1 14 A 100 mΩ METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 48 W SWITCHING SILICON TO-252AA R-PSSO-G2 e3 Not Qualified 1 175 °C 260 30 DRAIN PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE MATTE TIN GULL WING SINGLE RFD14N05LSM 2260 not_compliant EAR99 5.4 TO-252, 3 PIN 369AS Mainland China
IRFZ48NSTRLPBF
Infineon Technologies AG
查询价格和库存
Yes Active N-CHANNEL YES SINGLE WITH BUILT-IN DIODE 2 55 V 1 64 A 14 mΩ AVALANCHE RATED, HIGH RELIABILITY 190 mJ METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 210 A SWITCHING SILICON R-PSSO-G2 e3 Not Qualified 1 260 30 DRAIN PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE Matte Tin (Sn) - with Nickel (Ni) barrier GULL WING SINGLE IRFZ48NSTRLPBF 2065 not_compliant EAR99 5.55 SMALL OUTLINE, R-PSSO-G2 Mainland China
IRFR5305TRPBF
Infineon Technologies AG
查询价格和库存
Yes Active P-CHANNEL YES SINGLE WITH BUILT-IN DIODE 2 55 V 1 31 A 65 mΩ AVALANCHE RATED, HIGH RELIABILITY 280 mJ METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 110 W 110 A SWITCHING SILICON TO-252AA R-PSSO-G2 e3 Not Qualified 1 175 °C -55 °C 260 30 DRAIN PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE Matte Tin (Sn) - with Nickel (Ni) barrier GULL WING SINGLE IRFR5305TRPBF 2065 not_compliant EAR99 5.4 Mainland China
FDD4685
onsemi
查询价格和库存
Yes Active P-CHANNEL YES SINGLE WITH BUILT-IN DIODE 2 40 V 1 8.4 A 42 mΩ 121 mJ 205 pF METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 69 W 100 A SILICON 81 ns 43 ns TO-252AA R-PSSO-G2 e3 Not Qualified 1 150 °C -55 °C 260 30 DRAIN PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE Matte Tin (Sn) - annealed GULL WING SINGLE FDD4685 2260 not_compliant EAR99 5.55 DPAK, TO-252, 2 PIN 369AS Mainland China
IRFR110TRPBF
Vishay Intertechnologies
查询价格和库存
Yes Yes Active N-CHANNEL YES SINGLE WITH BUILT-IN DIODE 2 100 V 1 4.3 A 540 mΩ AVALANCHE RATED 100 mJ METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 25 W 17 A SWITCHING SILICON TO-252AA R-PSSO-G2 e3 Not Qualified 1 150 °C 260 30 DRAIN PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE Matte Tin (Sn) GULL WING SINGLE 2516 compliant EAR99 5.4 TO-252AA 3
RFD14N05LSM9A
onsemi
查询价格和库存
Yes Active N-CHANNEL YES SINGLE WITH BUILT-IN DIODE 2 50 V 1 14 A 100 mΩ METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 48 W SWITCHING SILICON TO-252AA R-PSSO-G2 e3 Not Qualified 1 175 °C 260 30 DRAIN PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE MATTE TIN GULL WING SINGLE RFD14N05LSM9A 2260 not_compliant EAR99 5.4 TO-252, 3 PIN 369AS Mainland China
IRF9520SPBF
Vishay Intertechnologies
查询价格和库存
Yes Yes Active P-CHANNEL YES SINGLE WITH BUILT-IN DIODE 2 100 V 1 6.8 A 600 mΩ AVALANCHE RATED 300 mJ METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 60 W 27 A SWITCHING SILICON TO-263AB R-PSSO-G2 e3 Not Qualified 3 175 °C 260 30 DRAIN PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE Matte Tin (Sn) GULL WING SINGLE 2516 not_compliant EAR99 5.4 SMALL OUTLINE, R-PSSO-G2 D2PAK 3
IRFR320TRPBF
Vishay Intertechnologies
查询价格和库存
Yes Yes Active N-CHANNEL YES SINGLE WITH BUILT-IN DIODE 2 400 V 1 3.1 A 1.8 Ω AVALANCHE RATED 160 mJ METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 42 W 12 A SWITCHING SILICON TO-252AA R-PSSO-G2 e3 Not Qualified 1 150 °C 260 30 DRAIN PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE Matte Tin (Sn) - annealed GULL WING SINGLE 2516 compliant EAR99 6.3 SMALL OUTLINE, R-PSSO-G2 TO-252AA 3
STB85NF55LT4
STMicroelectronics
查询价格和库存
Active N-CHANNEL YES SINGLE WITH BUILT-IN DIODE 2 55 V 1 80 A 10 mΩ LOGIC LEVEL COMPATIBLE 980 mJ METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 300 W 320 A SWITCHING SILICON TO-263AB R-PSSO-G2 e3 Not Qualified 1 175 °C NOT SPECIFIED NOT SPECIFIED DRAIN PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE Matte Tin (Sn) GULL WING SINGLE STB85NF55LT4 2443 not_compliant EAR99 5.6 SMALL OUTLINE, R-PSSO-G2 D2PAK 4 Mainland China
IRF9640STRLPBF
Vishay Intertechnologies
查询价格和库存
Yes Yes Active P-CHANNEL YES SINGLE 2 200 V 1 11 A 500 mΩ 700 mJ METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 125 W 44 A SWITCHING SILICON TO-263AB R-PSSO-G2 e3 Not Qualified 1 150 °C 260 10 DRAIN PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE MATTE TIN GULL WING SINGLE 2516 not_compliant EAR99 5.97 D2PAK 4 Mainland China
IRFR3910TRPBF
Infineon Technologies AG
查询价格和库存
Yes Active N-CHANNEL YES SINGLE WITH BUILT-IN DIODE 2 100 V 1 16 A 115 mΩ AVALANCHE RATED 150 mJ METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 79 W 60 A SWITCHING SILICON TO-252AA R-PSSO-G2 e3 Not Qualified 1 175 °C -55 °C 260 30 DRAIN PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE Matte Tin (Sn) - with Nickel (Ni) barrier GULL WING SINGLE IRFR3910TRPBF 2065 not_compliant EAR99 5.6
IRLR024NTRPBF
Infineon Technologies AG
查询价格和库存
Yes Active N-CHANNEL YES SINGLE WITH BUILT-IN DIODE 2 55 V 1 17 A 80 mΩ LOGIC LEVEL COMPATIBLE, AVALANCHE RATED 68 mJ METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 45 W 72 A SWITCHING SILICON TO-252AA R-PSSO-G2 e3 Not Qualified 1 175 °C 260 30 DRAIN PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE Matte Tin (Sn) - with Nickel (Ni) barrier GULL WING SINGLE IRLR024NTRPBF 2065 not_compliant EAR99 5.4 Mainland China, Taiwan, USA
IRFR1N60ATRPBF
Vishay Intertechnologies
查询价格和库存
Yes Yes Active N-CHANNEL YES SINGLE WITH BUILT-IN DIODE 2 600 V 1 1.4 A 7 Ω 93 mJ METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 36 W 5.6 A SWITCHING SILICON TO-252AA R-PSSO-G2 e3 Not Qualified 1 150 °C 260 30 DRAIN PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE Matte Tin (Sn) GULL WING SINGLE 2516 not_compliant EAR99 6.3 SMALL OUTLINE, R-PSSO-G2 TO-252AA 3
型号 Most Relevant Technical Compliance Operating Conditions Physical Other
数据手册 单价/库存
风险等级 是否无铅 是否Rohs认证
生命周期 极性/信道类型 表面贴装
配置 端子数量 最小漏源击穿电压 元件数量 最大漏极电流 (ID) 最大漏源导通电阻 其他特性 雪崩能效等级(Eas) 最大反馈电容 (Crss) FET 技术 工作模式 功耗环境最大值 最大功率耗散 (Abs) 最大脉冲漏极电流 (IDM) 晶体管应用
晶体管元件材料
最大关闭时间(toff)
最大开启时间(吨)
JEDEC-95代码 JESD-30 代码 JESD-609代码 认证状态 参考标准
湿度敏感等级 最高工作温度 最低工作温度 峰值回流温度(摄氏度) 处于峰值回流温度下的最长时间
外壳连接 封装主体材料 封装形状 封装形式 端子面层
端子形式
端子位置
Source Content uid
mfrid
是否符合REACH标准
ECCN代码
YTEOL
包装说明
零件包装代码
针数
制造商包装代码
Country Of Origin
HTS代码
IRF1404STRLPBF
Infineon Technologies AG
查询价格和库存
Yes Active N-CHANNEL YES SINGLE WITH BUILT-IN DIODE 2 40 V 1 75 A 4 mΩ AVALANCHE RATED, HIGH RELIABILITY, ULTRA LOW RESISTANCE 519 mJ METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 650 A SWITCHING SILICON R-PSSO-G2 e3 Not Qualified 1 260 30 DRAIN PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE Matte Tin (Sn) - with Nickel (Ni) barrier GULL WING SINGLE IRF1404STRLPBF 2065 not_compliant EAR99 5.6
IRL540NSTRLPBF
Infineon Technologies AG
查询价格和库存
Yes Active N-CHANNEL YES SINGLE WITH BUILT-IN DIODE 2 100 V 1 36 A 53 mΩ AVALANCHE RATED, HIGH RELIABILITY 310 mJ METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 120 A SWITCHING SILICON R-PSSO-G2 e3 Not Qualified 1 260 30 DRAIN PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE Matte Tin (Sn) - with Nickel (Ni) barrier GULL WING SINGLE IRL540NSTRLPBF 2065 not_compliant EAR99 5.75 SMALL OUTLINE, R-PSSO-G2
NTD20N06T4G
onsemi
查询价格和库存
Yes Active N-CHANNEL YES SINGLE WITH BUILT-IN DIODE 2 60 V 1 20 A 46 mΩ 170 mJ 120 pF METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 60 W 60 W 60 A SWITCHING SILICON 140 ns 140 ns R-PSSO-G2 e3 Not Qualified 1 175 °C -55 °C 260 30 DRAIN PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE Matte Tin (Sn) - annealed GULL WING SINGLE NTD20N06T4G 2260 not_compliant EAR99 5.55 DPAK-3 DPAK (SINGLE GAUGE) TO-252 3 369C Mainland China, Malaysia, Vietnam 8541.29.00.95
IRL640SPBF
Vishay Intertechnologies
查询价格和库存
Yes Yes Active N-CHANNEL YES SINGLE WITH BUILT-IN DIODE 2 200 V 1 17 A 180 mΩ LOGIC LEVEL COMPATIBLE 580 mJ METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 125 W 68 A SWITCHING SILICON TO-263AB R-PSSO-G2 Not Qualified 3 150 °C DRAIN PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE GULL WING SINGLE 2516 compliant EAR99 5.97 SMALL OUTLINE, R-PSSO-G2 D2PAK 3
IRFR9024NTRLPBF
Infineon Technologies AG
查询价格和库存
Yes Active P-CHANNEL YES SINGLE WITH BUILT-IN DIODE 2 55 V 1 11 A 175 mΩ AVALANCHE RATED, HIGH RELIABILITY 62 mJ METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 38 W 44 A SWITCHING SILICON TO-252AA R-PSSO-G2 e3 Not Qualified 1 150 °C 260 30 DRAIN PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE Matte Tin (Sn) - with Nickel (Ni) barrier GULL WING SINGLE IRFR9024NTRLPBF 2065 not_compliant EAR99 5.4
IRFR5305TRLPBF
Infineon Technologies AG
查询价格和库存
Yes Active P-CHANNEL YES SINGLE WITH BUILT-IN DIODE 2 55 V 1 31 A 65 mΩ AVALANCHE RATED, HIGH RELIABILITY 280 mJ METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 110 W 110 A SWITCHING SILICON TO-252AA R-PSSO-G2 e3 Not Qualified 1 175 °C 260 30 DRAIN PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE Matte Tin (Sn) - with Nickel (Ni) barrier GULL WING SINGLE IRFR5305TRLPBF 2065 not_compliant EAR99 5.4
BUK9608-55B,118
Nexperia
查询价格和库存
Active N-CHANNEL YES SINGLE WITH BUILT-IN DIODE 2 55 V 1 75 A 9.3 mΩ LOGIC LEVEL COMPATIBLE 352 mJ METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 439 A SWITCHING SILICON R-PSSO-G2 e3 Not Qualified AEC-Q101 1 175 °C 245 30 DRAIN PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE TIN GULL WING SINGLE BUK9608-55B,118 229119436 not_compliant EAR99 5.6 SMALL OUTLINE, R-PSSO-G2 D2PAK 3 SOT404 Philippines
RFD14N05LSM
onsemi
查询价格和库存
Yes Active N-CHANNEL YES SINGLE WITH BUILT-IN DIODE 2 50 V 1 14 A 100 mΩ METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 48 W SWITCHING SILICON TO-252AA R-PSSO-G2 e3 Not Qualified 1 175 °C 260 30 DRAIN PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE MATTE TIN GULL WING SINGLE RFD14N05LSM 2260 not_compliant EAR99 5.4 TO-252, 3 PIN 369AS Mainland China
IRFZ48NSTRLPBF
Infineon Technologies AG
查询价格和库存
Yes Active N-CHANNEL YES SINGLE WITH BUILT-IN DIODE 2 55 V 1 64 A 14 mΩ AVALANCHE RATED, HIGH RELIABILITY 190 mJ METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 210 A SWITCHING SILICON R-PSSO-G2 e3 Not Qualified 1 260 30 DRAIN PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE Matte Tin (Sn) - with Nickel (Ni) barrier GULL WING SINGLE IRFZ48NSTRLPBF 2065 not_compliant EAR99 5.55 SMALL OUTLINE, R-PSSO-G2 Mainland China
IRFR5305TRPBF
Infineon Technologies AG
查询价格和库存
Yes Active P-CHANNEL YES SINGLE WITH BUILT-IN DIODE 2 55 V 1 31 A 65 mΩ AVALANCHE RATED, HIGH RELIABILITY 280 mJ METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 110 W 110 A SWITCHING SILICON TO-252AA R-PSSO-G2 e3 Not Qualified 1 175 °C -55 °C 260 30 DRAIN PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE Matte Tin (Sn) - with Nickel (Ni) barrier GULL WING SINGLE IRFR5305TRPBF 2065 not_compliant EAR99 5.4 Mainland China
FDD4685
onsemi
查询价格和库存
Yes Active P-CHANNEL YES SINGLE WITH BUILT-IN DIODE 2 40 V 1 8.4 A 42 mΩ 121 mJ 205 pF METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 69 W 100 A SILICON 81 ns 43 ns TO-252AA R-PSSO-G2 e3 Not Qualified 1 150 °C -55 °C 260 30 DRAIN PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE Matte Tin (Sn) - annealed GULL WING SINGLE FDD4685 2260 not_compliant EAR99 5.55 DPAK, TO-252, 2 PIN 369AS Mainland China
IRFR110TRPBF
Vishay Intertechnologies
查询价格和库存
Yes Yes Active N-CHANNEL YES SINGLE WITH BUILT-IN DIODE 2 100 V 1 4.3 A 540 mΩ AVALANCHE RATED 100 mJ METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 25 W 17 A SWITCHING SILICON TO-252AA R-PSSO-G2 e3 Not Qualified 1 150 °C 260 30 DRAIN PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE Matte Tin (Sn) GULL WING SINGLE 2516 compliant EAR99 5.4 TO-252AA 3
RFD14N05LSM9A
onsemi
查询价格和库存
Yes Active N-CHANNEL YES SINGLE WITH BUILT-IN DIODE 2 50 V 1 14 A 100 mΩ METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 48 W SWITCHING SILICON TO-252AA R-PSSO-G2 e3 Not Qualified 1 175 °C 260 30 DRAIN PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE MATTE TIN GULL WING SINGLE RFD14N05LSM9A 2260 not_compliant EAR99 5.4 TO-252, 3 PIN 369AS Mainland China
IRF9520SPBF
Vishay Intertechnologies
查询价格和库存
Yes Yes Active P-CHANNEL YES SINGLE WITH BUILT-IN DIODE 2 100 V 1 6.8 A 600 mΩ AVALANCHE RATED 300 mJ METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 60 W 27 A SWITCHING SILICON TO-263AB R-PSSO-G2 e3 Not Qualified 3 175 °C 260 30 DRAIN PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE Matte Tin (Sn) GULL WING SINGLE 2516 not_compliant EAR99 5.4 SMALL OUTLINE, R-PSSO-G2 D2PAK 3
IRFR320TRPBF
Vishay Intertechnologies
查询价格和库存
Yes Yes Active N-CHANNEL YES SINGLE WITH BUILT-IN DIODE 2 400 V 1 3.1 A 1.8 Ω AVALANCHE RATED 160 mJ METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 42 W 12 A SWITCHING SILICON TO-252AA R-PSSO-G2 e3 Not Qualified 1 150 °C 260 30 DRAIN PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE Matte Tin (Sn) - annealed GULL WING SINGLE 2516 compliant EAR99 6.3 SMALL OUTLINE, R-PSSO-G2 TO-252AA 3
STB85NF55LT4
STMicroelectronics
查询价格和库存
Active N-CHANNEL YES SINGLE WITH BUILT-IN DIODE 2 55 V 1 80 A 10 mΩ LOGIC LEVEL COMPATIBLE 980 mJ METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 300 W 320 A SWITCHING SILICON TO-263AB R-PSSO-G2 e3 Not Qualified 1 175 °C NOT SPECIFIED NOT SPECIFIED DRAIN PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE Matte Tin (Sn) GULL WING SINGLE STB85NF55LT4 2443 not_compliant EAR99 5.6 SMALL OUTLINE, R-PSSO-G2 D2PAK 4 Mainland China
IRF9640STRLPBF
Vishay Intertechnologies
查询价格和库存
Yes Yes Active P-CHANNEL YES SINGLE 2 200 V 1 11 A 500 mΩ 700 mJ METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 125 W 44 A SWITCHING SILICON TO-263AB R-PSSO-G2 e3 Not Qualified 1 150 °C 260 10 DRAIN PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE MATTE TIN GULL WING SINGLE 2516 not_compliant EAR99 5.97 D2PAK 4 Mainland China
IRFR3910TRPBF
Infineon Technologies AG
查询价格和库存
Yes Active N-CHANNEL YES SINGLE WITH BUILT-IN DIODE 2 100 V 1 16 A 115 mΩ AVALANCHE RATED 150 mJ METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 79 W 60 A SWITCHING SILICON TO-252AA R-PSSO-G2 e3 Not Qualified 1 175 °C -55 °C 260 30 DRAIN PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE Matte Tin (Sn) - with Nickel (Ni) barrier GULL WING SINGLE IRFR3910TRPBF 2065 not_compliant EAR99 5.6
IRLR024NTRPBF
Infineon Technologies AG
查询价格和库存
Yes Active N-CHANNEL YES SINGLE WITH BUILT-IN DIODE 2 55 V 1 17 A 80 mΩ LOGIC LEVEL COMPATIBLE, AVALANCHE RATED 68 mJ METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 45 W 72 A SWITCHING SILICON TO-252AA R-PSSO-G2 e3 Not Qualified 1 175 °C 260 30 DRAIN PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE Matte Tin (Sn) - with Nickel (Ni) barrier GULL WING SINGLE IRLR024NTRPBF 2065 not_compliant EAR99 5.4 Mainland China, Taiwan, USA
IRFR1N60ATRPBF
Vishay Intertechnologies
查询价格和库存
Yes Yes Active N-CHANNEL YES SINGLE WITH BUILT-IN DIODE 2 600 V 1 1.4 A 7 Ω 93 mJ METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 36 W 5.6 A SWITCHING SILICON TO-252AA R-PSSO-G2 e3 Not Qualified 1 150 °C 260 30 DRAIN PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE Matte Tin (Sn) GULL WING SINGLE 2516 not_compliant EAR99 6.3 SMALL OUTLINE, R-PSSO-G2 TO-252AA 3
前一页34567下一页
Add to list:
注册 or 登录