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存储:

1,461,566 个筛选结果
SRAM (539,038)
闪存 (312,420)
DRAM (266,030)
EEPROM (146,547)
FIFO (71,234)
OTP ROM (37,472)
EPROM (21,819)
MASK ROM (10,038)
PROM (70)
型号
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最大时钟频率 (fCLK) (50)
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制造商 (50)
内存密度 (50)
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内存宽度 (45)
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组织 (50)
型号
型号 Most Relevant Technical Compliance Operating Conditions Physical Dimensions Other
数据手册 单价/库存
风险等级 是否无铅 是否Rohs认证
生命周期 内存密度 内存宽度 组织 标称供电电压 (Vsup)
最大时钟频率 (fCLK) 内存集成电路类型 其他特性 备用内存宽度 数据保留时间-最小值 耐久性 I2C控制字节 功能数量 端口数量 字数代码 字数 工作模式 输出特性 并行/串行 编程电压
就绪/忙碌
反向引出线
串行总线类型
最大待机电流
最大压摆率
最大供电电压 (Vsup)
最小供电电压 (Vsup)
技术 温度等级
切换位
最长写入周期时间 (tWC)
写保护
JESD-30 代码 认证状态
JESD-609代码 湿度敏感等级 最高工作温度 最低工作温度 峰值回流温度(摄氏度) 筛选级别
处于峰值回流温度下的最长时间
端子数量 封装主体材料 封装代码 封装等效代码 封装形状 封装形式 表面贴装
端子面层
端子形式
端子节距
端子位置
座面最大高度
长度 宽度
Source Content uid
mfrid
零件包装代码
包装说明
针数
制造商包装代码
是否符合REACH标准
Country Of Origin
ECCN代码
HTS代码
YTEOL
CAT93C66VI-GT3
onsemi
查询价格和库存
Yes Active 4.096 kbit 16 256X16 5 V 2 MHz EEPROM 100 YEAR DATA RETENTION 8 100 1000000 Write/Erase Cycles 1 256 256 words SYNCHRONOUS SERIAL MICROWIRE 10 µA 3 µA 5.5 V 1.8 V CMOS INDUSTRIAL SOFTWARE R-PDSO-G8 Not Qualified e4 1 85 °C -40 °C 260 30 8 PLASTIC/EPOXY SOP SOP8,.25 RECTANGULAR SMALL OUTLINE YES Nickel/Palladium/Gold (Ni/Pd/Au) GULL WING 1.27 mm DUAL 1.75 mm 4.9 mm 3.9 mm CAT93C66VI-GT3 2260 SOIC 8, 150 mils 0.150 INCH, HALOGEN FREE AND ROHS COMPLIANT, MS-012, SOIC-8 8 751BD compliant Philippines EAR99 8542.32.00.51 5.9
CAT25020VI-GT3
onsemi
查询价格和库存
Yes Active 2.048 kbit 8 256X8 5 V 20 MHz EEPROM 100 1000000 Write/Erase Cycles 1 256 256 words SYNCHRONOUS SERIAL SPI 2 µA 2 µA 5.5 V 1.8 V CMOS INDUSTRIAL 5 ms HARDWARE/SOFTWARE R-PDSO-G8 Not Qualified e4 1 85 °C -40 °C 260 30 8 PLASTIC/EPOXY SOP SOP8,.25 RECTANGULAR SMALL OUTLINE YES Nickel/Palladium/Gold (Ni/Pd/Au) GULL WING 1.27 mm DUAL 1.75 mm 4.9 mm 3.9 mm CAT25020VI-GT3 2260 SOIC 8, 150 mils MS-012, SOIC-8 8 751BD compliant Philippines EAR99 8542.32.00.51 5.9
CAT25010VI-GT3
onsemi
查询价格和库存
Yes Active 1.024 kbit 8 128X8 5 V 20 MHz EEPROM 100 1000000 Write/Erase Cycles 1 128 128 words SYNCHRONOUS SERIAL SPI 2 µA 2 µA 5.5 V 1.8 V CMOS INDUSTRIAL 5 ms HARDWARE/SOFTWARE R-PDSO-G8 Not Qualified e4 1 85 °C -40 °C 260 30 8 PLASTIC/EPOXY SOP SOP8,.25 RECTANGULAR SMALL OUTLINE YES Nickel/Palladium/Gold (Ni/Pd/Au) GULL WING 1.27 mm DUAL 1.75 mm 4.9 mm 3.9 mm CAT25010VI-GT3 2260 SOIC 8, 150 mils MS-012, SOIC-8 8 751BD compliant Philippines EAR99 8542.32.00.51 5.9
CAT25010YI-GT3
onsemi
查询价格和库存
Yes Active 1.024 kbit 8 128X8 5 V 20 MHz EEPROM 100 1000000 Write/Erase Cycles 1 128 128 words SYNCHRONOUS SERIAL SPI 2 µA 2 µA 5.5 V 1.8 V CMOS INDUSTRIAL 5 ms HARDWARE/SOFTWARE R-PDSO-G8 Not Qualified e4 1 85 °C -40 °C 260 30 8 PLASTIC/EPOXY TSSOP TSSOP8,.25 RECTANGULAR SMALL OUTLINE, THIN PROFILE, SHRINK PITCH YES Nickel/Palladium/Gold (Ni/Pd/Au) GULL WING 650 µm DUAL 1.2 mm 4.4 mm 3 mm CAT25010YI-GT3 2260 TSSOP8, 4.4x3 MO-153, TSSOP-8 8 948AL compliant Thailand EAR99 8542.32.00.51 5.9
93LC46B-I/SN
Microchip Technology Inc
查询价格和库存
Yes Yes Active 1.024 kbit 16 64X16 3 V 2 MHz EEPROM 1000000 ERASE/WRITE CYCLES MIN; DATA RETENTION > 200 YEARS 200 1000000 Write/Erase Cycles 1 1 64 64 words SYNCHRONOUS TOTEM POLE SERIAL YES NO MICROWIRE 1 µA 2 µA 5.5 V 2.5 V CMOS INDUSTRIAL 6 ms SOFTWARE R-PDSO-G8 Not Qualified e3 1 85 °C -40 °C 260 TS 16949 30 8 PLASTIC/EPOXY SOP SOP8,.25 RECTANGULAR SMALL OUTLINE YES MATTE TIN GULL WING 1.27 mm DUAL 1.75 mm 4.9 mm 3.9 mm 93LC46B-I/SN 2188 SOIC 3.90 MM, ROHS COMPLIANT, PLASTIC, SOIC-8 8 compliant Thailand EAR99 8542.32.00.51 10
93LC46B/SN
Microchip Technology Inc
查询价格和库存
Yes Yes Active 1.024 kbit 16 64X16 4.5 V 2 MHz EEPROM 200 1000000 Write/Erase Cycles 1 1 64 64 words SYNCHRONOUS SERIAL 4.5 V MICROWIRE 1 µA 1.5 µA 6 V 2.5 V CMOS COMMERCIAL 6 ms HARDWARE/SOFTWARE R-PDSO-G8 Not Qualified e3 1 70 °C 260 30 8 PLASTIC/EPOXY SOP SOP8,.23 RECTANGULAR SMALL OUTLINE YES MATTE TIN GULL WING 1.27 mm DUAL 1.75 mm 4.9 mm 3.9 mm 93LC46B/SN 2188 SOIC 0.150 INCH, PLASTIC, SOIC-8 8 compliant Thailand EAR99 8542.32.00.51 5.9
93LC46BT-I/SN
Microchip Technology Inc
查询价格和库存
Yes Yes Active 1.024 kbit 16 64X16 3 V 2 MHz EEPROM 1000000 ERASE/WRITE CYCLES MIN; DATA RETENTION > 200 YEARS 200 1000000 Write/Erase Cycles 1 1 64 64 words SYNCHRONOUS TOTEM POLE SERIAL YES NO MICROWIRE 1 µA 2 µA 5.5 V 2.5 V CMOS INDUSTRIAL 6 ms SOFTWARE R-PDSO-G8 Not Qualified e3 1 85 °C -40 °C 260 TS 16949 30 8 PLASTIC/EPOXY SOP SOP8,.25 RECTANGULAR SMALL OUTLINE YES MATTE TIN GULL WING 1.27 mm DUAL 1.75 mm 4.9 mm 3.9 mm 93LC46BT-I/SN 2188 SOIC 3.90 MM, ROHS COMPLIANT, PLASTIC, SOIC-8 8 compliant Thailand EAR99 8542.32.00.51 10
93LC46BT/SN
Microchip Technology Inc
查询价格和库存
Yes Yes Active 1.024 kbit 16 64X16 4.5 V 2 MHz EEPROM 200 1000000 Write/Erase Cycles 1 1 64 64 words SYNCHRONOUS SERIAL 4.5 V MICROWIRE 1 µA 1.5 µA 6 V 2.5 V CMOS COMMERCIAL 6 ms HARDWARE/SOFTWARE R-PDSO-G8 Not Qualified e3 1 70 °C 260 30 8 PLASTIC/EPOXY SOP SOP8,.23 RECTANGULAR SMALL OUTLINE YES MATTE TIN GULL WING 1.27 mm DUAL 1.75 mm 4.9 mm 3.9 mm 93LC46BT/SN 2188 SOIC 0.150 INCH, PLASTIC, SOIC-8 8 compliant Thailand EAR99 8542.32.00.51 5.9
24LC16B/SN
Microchip Technology Inc
查询价格和库存
Yes Yes Active 16.384 kbit 8 2KX8 5 V 400 kHz EEPROM 200 1000000 Write/Erase Cycles 1010MMMR 1 1 2000 2.048 k SYNCHRONOUS OPEN-DRAIN SERIAL 5 V I2C 100 µA 3 µA 5.5 V 4.5 V CMOS COMMERCIAL 10 ms HARDWARE R-PDSO-G8 Not Qualified e3 1 70 °C 260 30 8 PLASTIC/EPOXY SOP SOP8,.23 RECTANGULAR SMALL OUTLINE YES MATTE TIN GULL WING 1.27 mm DUAL 1.75 mm 4.9 mm 3.9 mm 24LC16B/SN 2188 SOIC 0.150 INCH, PLASTIC, SOIC-8 8 compliant Thailand EAR99 8542.32.00.51 6.2
24LC16B-E/SN
Microchip Technology Inc
查询价格和库存
Yes Yes Active 16.384 kbit 8 2KX8 3 V 400 kHz EEPROM 200 1000000 Write/Erase Cycles 1010MMMR 1 1 2000 2.048 k SYNCHRONOUS OPEN-DRAIN SERIAL 3 V I2C 5 µA 3 µA 5.5 V 2.5 V CMOS AUTOMOTIVE 5 ms HARDWARE R-PDSO-G8 Not Qualified e3 1 125 °C -40 °C 260 30 8 PLASTIC/EPOXY SOP SOP8,.25 RECTANGULAR SMALL OUTLINE YES Matte Tin (Sn) GULL WING 1.27 mm DUAL 1.75 mm 4.9 mm 3.9 mm 24LC16B-E/SN 2188 SOIC SOP, SOP8,.25 8 compliant Thailand EAR99 8542.32.00.51 10
24LC16BT-E/SN
Microchip Technology Inc
查询价格和库存
Yes Yes Active 16.384 kbit 8 2KX8 3 V 400 kHz EEPROM 200 1000000 Write/Erase Cycles 1010MMMR 1 1 2000 2.048 k SYNCHRONOUS OPEN-DRAIN SERIAL 3 V I2C 5 µA 3 µA 5.5 V 2.5 V CMOS AUTOMOTIVE 5 ms HARDWARE R-PDSO-G8 Not Qualified e3 1 125 °C -40 °C 260 30 8 PLASTIC/EPOXY SOP SOP8,.25 RECTANGULAR SMALL OUTLINE YES MATTE TIN GULL WING 1.27 mm DUAL 1.75 mm 4.9 mm 3.9 mm 24LC16BT-E/SN 2188 SOIC 8 compliant Thailand EAR99 8542.32.00.51 10
93LC66B/SN
Microchip Technology Inc
查询价格和库存
Yes Yes Active 4.096 kbit 16 256X16 3 V 2 MHz EEPROM 200 1000000 Write/Erase Cycles 1 1 256 256 words SYNCHRONOUS SERIAL 3 V MICROWIRE 1 µA 1.5 µA 6 V 2.5 V CMOS COMMERCIAL 6 ms HARDWARE/SOFTWARE R-PDSO-G8 Not Qualified e3 1 70 °C 260 AEC-Q100 30 8 PLASTIC/EPOXY SOP SOP8,.23 RECTANGULAR SMALL OUTLINE YES MATTE TIN GULL WING 1.27 mm DUAL 1.75 mm 4.9 mm 3.9 mm 93LC66B/SN 2188 SOIC SOP, SOP8,.25 8 compliant Thailand EAR99 8542.32.00.51 10
93LC66B-I/SN
Microchip Technology Inc
查询价格和库存
Yes Yes Active 4.096 kbit 16 256X16 2.5 V 1 MHz EEPROM 1000000 ERASE/WRITE CYCLES MIN; DATA RETENTION > 200 YEARS 200 1000000 Write/Erase Cycles 1 1 256 256 words SYNCHRONOUS TOTEM POLE SERIAL YES NO MICROWIRE 1 µA 2 µA 5.5 V 1.8 V CMOS INDUSTRIAL YES 6 ms SOFTWARE R-PDSO-G8 Not Qualified e3 1 85 °C -40 °C 260 TS 16949 30 8 PLASTIC/EPOXY SOP SOP8,.25 RECTANGULAR SMALL OUTLINE YES MATTE TIN GULL WING 1.27 mm DUAL 1.75 mm 4.9 mm 3.9 mm 93LC66B-I/SN 2188 SOIC 8 compliant Thailand EAR99 8542.32.00.51 10
93LC46A/SN
Microchip Technology Inc
查询价格和库存
Yes Yes Active 1.024 kbit 8 128X8 4.5 V 2 MHz EEPROM 200 1000000 Write/Erase Cycles 1 1 128 128 words SYNCHRONOUS SERIAL 4.5 V MICROWIRE 1 µA 1.5 µA 6 V 2.5 V CMOS COMMERCIAL 6 ms HARDWARE/SOFTWARE R-PDSO-G8 Not Qualified e3 1 70 °C 260 30 8 PLASTIC/EPOXY