Most Relevant | Technical | Compliance | Operating Conditions | Physical | Other | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
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制造商型号 | 制造商 | 数据手册 |
价格/库存
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风险等级 | 是否无铅 | 生命周期 | 集电极-发射极最大电压 | 最大集电极电流 (IC) | 极性/信道类型 |
表面贴装
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配置 | 端子数量 | 最小漏源击穿电压 | 元件数量 | 最大漏极电流 (Abs) (ID) | 最小直流电流增益 (hFE) | 最大漏极电流 (ID) | 最大漏源导通电阻 |
标称过渡频率 (fT)
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其他特性 | 基于收集器的最大容量 | 最大反馈电容 (Crss) | FET 技术 | 工作模式 | 功耗环境最大值 | 最大功率耗散 (Abs) |
晶体管应用
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晶体管元件材料
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最大关闭时间(toff)
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最大开启时间(吨)
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VCEsat-Max
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JEDEC-95代码 | JESD-30 代码 | JESD-609代码 | 认证状态 |
参考标准
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湿度敏感等级 | 最高工作温度 | 最低工作温度 | 峰值回流温度(摄氏度) |
处于峰值回流温度下的最长时间
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封装主体材料 | 封装形状 | 封装形式 |
端子面层
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端子形式
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端子位置
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Source Content uid
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零件包装代码
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包装说明
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针数
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制造商包装代码
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是否符合REACH标准
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Country Of Origin
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ECCN代码
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交付时间
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YTEOL
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HTS代码
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Date Of Intro
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2V7002LT1G
|
onsemi
|
查询价格和库存 |
|
Yes | Active | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 3 | 60 V | 1 | 115 mA | 115 mA | 7.5 Ω | 5 pF | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 300 mW | SWITCHING | SILICON | TO-236 | R-PDSO-G3 | e3 | AEC-Q101 | 1 | 150 °C | -55 °C | 260 | 30 | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | MATTE TIN | GULL WING | DUAL | 2V7002LT1G | SOT-23 | HALOGEN FREE AND ROHS COMPLIANT, CASE 318-08, 3 PIN | 3 | 318-08 | compliant | Mainland China | EAR99 | [object Object] | 6.52 | ||||||||||||||
2N7002LT1G
|
onsemi
|
查询价格和库存 |
|
Yes | Active | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 3 | 60 V | 1 | 115 mA | 115 mA | 7.5 Ω | 5 pF | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 300 mW | SWITCHING | SILICON | TO-236 | R-PDSO-G3 | e3 | Not Qualified | 1 | 150 °C | -55 °C | 260 | 30 | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | MATTE TIN | GULL WING | DUAL | 2N7002LT1G | SOT-23 | HALOGEN FREE AND ROHS COMPLIANT, CASE 318-08, 3 PIN | 3 | 318-08 | compliant | Mainland China | EAR99 | [object Object] | 6.52 | 8541.21.00.95 | |||||||||||||
PMBT2222A,215
|
Nexperia
|
查询价格和库存 |
|
Active | 40 V | 600 mA | NPN | YES | SINGLE | 3 | 1 | 40 | 300 MHz | HIGH CURRENT DRIVER | 8 pF | SWITCHING | SILICON | 250 ns | 35 ns | 1 V | TO-236AB | R-PDSO-G3 | e3 | Not Qualified | 1 | 150 °C | 260 | 30 | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | TIN | GULL WING | DUAL | PMBT2222A,215 | TO-236 | SMALL OUTLINE, R-PDSO-G3 | 3 | SOT23 | compliant | Mainland China | EAR99 | 7.5 | 1997-09-01 | |||||||||||||||
2N7002,215
|
Nexperia
|
查询价格和库存 |
|
Active | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 3 | 60 V | 1 | 300 mA | 5 Ω | 10 pF | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | SWITCHING | SILICON | TO-236AB | R-PDSO-G3 | e3 | IEC-60134 | 1 | 150 °C | -65 °C | 260 | 30 | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | TIN | GULL WING | DUAL | 2N7002,215 | TO-236 | 3 | SOT23 | compliant | Mainland China | EAR99 | 6.52 | 8541.21.00.95 | 1995-04-01 | |||||||||||||||||
2N7002L
|
onsemi
|
查询价格和库存 |
|
Yes | Active | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 3 | 60 V | 1 | 115 mA | 7.5 Ω | 5 pF | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | SWITCHING | SILICON | TO-236AB | R-PDSO-G3 | e3 | 1 | 150 °C | -55 °C | 260 | 30 | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | Matte Tin (Sn) - annealed | GULL WING | DUAL | 2N7002L | SOT-23, 3 PIN | 318-08 | compliant | Mainland China | EAR99 | [object Object] | 6.52 | |||||||||||||||||||
2N7002LT3G
|
onsemi
|
查询价格和库存 |
|
Yes | Active | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 3 | 60 V | 1 | 115 mA | 115 mA | 7.5 Ω | 5 pF | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 300 mW | SWITCHING | SILICON | TO-236 | R-PDSO-G3 | e3 | Not Qualified | 1 | 150 °C | -55 °C | 260 | 30 | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | MATTE TIN | GULL WING | DUAL | 2N7002LT3G | SOT-23 | HALOGEN FREE AND ROHS COMPLIANT, CASE 318-08, 3 PIN | 3 | 318-08 | compliant | Mainland China | EAR99 | [object Object] | 6.52 | ||||||||||||||
MMBT2222ALT1G
|
onsemi
|
查询价格和库存 |
|
Yes | Active | 40 V | 600 mA | NPN | YES | SINGLE | 3 | 1 | 75 | 300 MHz | 300 mW | SWITCHING | SILICON | 285 ns | 35 ns | TO-236 | R-PDSO-G3 | e3 | Not Qualified | 1 | 150 °C | -55 °C | 260 | 30 | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | MATTE TIN | GULL WING | DUAL | MMBT2222ALT1G | SOT-23 | SMALL OUTLINE, R-PDSO-G3 | 3 | 318-08 | compliant | Mainland China | EAR99 | [object Object] | 7.5 | 8541.21.00.95 | ||||||||||||||
MMBT2222LT1G
|
onsemi
|
查询价格和库存 |
|
Yes | Active | 30 V | 600 mA | NPN | YES | SINGLE | 3 | 1 | 75 | 250 MHz | 225 mW | SWITCHING | SILICON | 285 ns | 35 ns | TO-236 | R-PDSO-G3 | e3 | Not Qualified | 1 | 150 °C | 260 | 30 | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | MATTE TIN | GULL WING | DUAL | MMBT2222LT1G | SOT-23 | SMALL OUTLINE, R-PDSO-G3 | 3 | 318-08 | compliant | Mainland China | EAR99 | [object Object] | 7.5 | ||||||||||||||||
BC850BLT1G
|
onsemi
|
查询价格和库存 |
|
Yes | Active | 45 V | 100 mA | NPN | YES | SINGLE | 3 | 1 | 200 | 100 MHz | 4.5 pF | 300 mW | SILICON | 600 mV | TO-236 | R-PDSO-G3 | e3 | Not Qualified | 1 | 150 °C | -55 °C | 260 | 30 | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | MATTE TIN | GULL WING | DUAL | BC850BLT1G | SOT-23 | SMALL OUTLINE, R-PDSO-G3 | 3 | 318-08 | compliant | Mainland China | EAR99 | [object Object] | 7.5 | ||||||||||||||||
MMBT2369ALT1G
|
onsemi
|
查询价格和库存 |
|
Yes | Active | 15 V | 200 mA | NPN | YES | SINGLE | 3 | 1 | 20 | 500 MHz | 225 mW | SWITCHING | SILICON | 18 ns | 12 ns | TO-236AB | R-PDSO-G3 | e3 | Not Qualified | 1 | 150 °C | -55 °C | 260 | 30 | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | MATTE TIN | GULL WING | DUAL | MMBT2369ALT1G | SOT-23 | SMALL OUTLINE, R-PDSO-G3 | 3 | 318-08 | compliant | Mainland China | EAR99 | [object Object] | 7.5 | 8541.21.00.95 | ||||||||||||||
2N7002LT7G
|
onsemi
|
查询价格和库存 |
|
Yes | Active | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 3 | 60 V | 1 | 115 mA | 7.5 Ω | 5 pF | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | SILICON | TO-236 | R-PDSO-G3 | e3 | 1 | 150 °C | -55 °C | 260 | 30 | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | MATTE TIN | GULL WING | DUAL | 2N7002LT7G | 318-08 | compliant | Mainland China | EAR99 | [object Object] | 6.52 | 2019-03-14 | ||||||||||||||||||||
MMBTA06LT1G
|
onsemi
|
查询价格和库存 |
|
Yes | Active | 80 V | 500 mA | NPN | YES | SINGLE | 3 | 1 | 100 | 100 MHz | 225 mW | AMPLIFIER | SILICON | TO-236 | R-PDSO-G3 | e3 | Not Qualified | 1 | 150 °C | -55 °C | 260 | 30 | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | MATTE TIN | GULL WING | DUAL | MMBTA06LT1G | SOT-23 | SMALL OUTLINE, R-PDSO-G3 | 3 | 318-08 | compliant | Mainland China | EAR99 | [object Object] | 7.5 | |||||||||||||||||
BC847,215
|
Nexperia
|
查询价格和库存 |
|
Active | 45 V | 100 mA | NPN | YES | SINGLE | 3 | 1 | 110 | 100 MHz | 1.5 pF | 250 mW | 250 mW | SWITCHING | SILICON | 400 mV | TO-236AB | R-PDSO-G3 | e3 | IEC-60134 | 1 | 150 °C | -65 °C | 260 | 30 | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | TIN | GULL WING | DUAL | BC847,215 | TO-236 | SMALL OUTLINE, R-PDSO-G3 | 3 | SOT23 | compliant | Mainland China, Malaysia | EAR99 | 7.5 | 8541.21.00.95 | 1997-09-01 | ||||||||||||||
PMBT2369,215
|
Nexperia
|
查询价格和库存 |
|
Active | 15 V | 200 mA | NPN | YES | SINGLE | 3 | 1 | 20 | 500 MHz | SWITCHING | SILICON | 20 ns | 10 ns | TO-236AB | R-PDSO-G3 | e3 | 1 | 260 | 30 | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | TIN | GULL WING | DUAL | PMBT2369,215 | TO-236 | SMALL OUTLINE, R-PDSO-G3 | 3 | SOT23 | compliant | Mainland China, Malaysia | EAR99 | 7.5 | 8541.21.00.75 | ||||||||||||||||||||
MMBT4403LT1G
|
onsemi
|
查询价格和库存 |
|
Yes | Active | 40 V | 600 mA | PNP | YES | SINGLE | 3 | 1 | 100 | 200 MHz | 8.5 pF | 225 mW | 225 mW | SWITCHING | SILICON | 255 ns | 35 ns | 750 mV | TO-236AB | R-PDSO-G3 | e3 | Not Qualified | 1 | 150 °C | -55 °C | 260 | 30 | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | MATTE TIN | GULL WING |