型号 | Most Relevant | Technical | Compliance | Operating Conditions | Physical | Other | ||||||||||||||||||||||||||||||||||||||||||||||||
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数据手册 |
单价/库存
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风险等级 |
是否无铅
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是否Rohs认证
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生命周期
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最大二极管电容 | 标称二极管电容 |
最大功率耗散
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最大二极管正向电阻 | 二极管元件材料 | 最小击穿电压 | 二极管类型 | 配置 |
表面贴装
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元件数量 | 技术 | 其他特性 | 应用 | 二极管电阻测试电流 | 二极管电阻测试频率 | 频带 | 少数载流子标称寿命 |
反向测试电压
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认证状态
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JESD-30 代码 | JESD-609代码 |
参考标准
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湿度敏感等级 |
最高工作温度
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最低工作温度
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峰值回流温度(摄氏度)
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处于峰值回流温度下的最长时间
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外壳连接 | 端子数量 |
封装主体材料
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封装形状
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封装形式
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端子面层
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端子形式
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端子位置
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Source Content uid
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mfrid
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包装说明
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针数
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是否符合REACH标准
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Country Of Origin
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ECCN代码
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HTS代码
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YTEOL
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Date Of Intro
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零件包装代码
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制造商包装代码
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BAR6305E6327HTSA1
Infineon Technologies AG
|
查询价格和库存 |
|
Yes | Yes | Not Recommended | 0.3 pF | 250 mW | 2 Ω | SILICON | 50 V | PIN DIODE | COMMON CATHODE, 2 ELEMENTS | YES | 2 | POSITIVE-INTRINSIC-NEGATIVE | SWITCHING | S BAND | 75 ns | R-PDSO-G3 | e3 | AEC-Q101 | 1 | 125 °C | -55 °C | 3 | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | Tin (Sn) | GULL WING | DUAL | BAR6305E6327HTSA1 | 2065 | R-PDSO-G3 | 3 | compliant | Mainland China | EAR99 | 8541.10.00.80 | 7.4 | ||||||||||||||
RN142SMT2R
ROHM Semiconductor
|
查询价格和库存 |
|
Yes | Active | 0.45 pF | 2 Ω | SILICON | 60 V | PIN DIODE | SINGLE | YES | 1 | POSITIVE-INTRINSIC-NEGATIVE | HIGH RELIABILITY | SWITCHING | 10 mA | 100 MHz | VERY HIGH FREQUENCY | 1 V | R-PDSO-F2 | e3 | 150 °C | 2 | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | Tin (Sn) | FLAT | DUAL | 2363 | SC-79, SOD-523, 2 PIN | compliant | EAR99 | 8541.10.00.80 | 7.4 | 2018-08-09 | ||||||||||||||||||
RN731VTE-17
ROHM Semiconductor
|
查询价格和库存 |
|
Yes | Yes | Active | 0.4 pF | 0.4 pF | 100 mW | 7 Ω | SILICON | 50 V | PIN DIODE | SINGLE | YES | 1 | POSITIVE-INTRINSIC-NEGATIVE | HIGH RELIABILITY | ATTENUATOR | 10 mA | 100 MHz | VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY | 35 V | Not Qualified | R-PDSO-F2 | e1 | 125 °C | 2 | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | Tin/Silver/Copper (Sn/Ag/Cu) | FLAT | DUAL | 2363 | compliant | EAR99 | 8541.10.00.80 | 7.4 | ||||||||||||||||
RN141CMT2R
ROHM Semiconductor
|
查询价格和库存 |
|
Yes | Active | 0.8 pF | 2 Ω | SILICON | 50 V | PIN DIODE | SINGLE | YES | 1 | POSITIVE-INTRINSIC-NEGATIVE | HIGH RELIABILITY | SWITCHING | 3 mA | 100 MHz | VERY HIGH FREQUENCY | 1 V | R-PDSO-F2 | e3 | 150 °C | 2 | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | Tin (Sn) | FLAT | DUAL | 2363 | compliant | EAR99 | 8541.10.00.80 | 7.4 | 2018-08-09 | |||||||||||||||||||
BAR81WH6327XTSA1
Infineon Technologies AG
|
查询价格和库存 |
|
Yes | Not Recommended | 1 pF | 100 mW | 1 Ω | SILICON | 30 V | PIN DIODE | SINGLE | YES | 1 | POSITIVE-INTRINSIC-NEGATIVE | SWITCHING | 80 ns | R-PDSO-G4 | e3 | 1 | 150 °C | CATHODE | 4 | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | Tin (Sn) | GULL WING | DUAL | BAR81WH6327XTSA1 | 2065 | R-PDSO-G4 | compliant | EAR99 | 8541.10.00.80 | 7.4 | |||||||||||||||||||
1SV264-TL-E
onsemi
|
查询价格和库存 |
|
Yes | Active | 0.4 pF | 4.5 Ω | SILICON | 50 V | PIN DIODE | SERIES CONNECTED, CENTER TAP, 2 ELEMENTS | 2 | POSITIVE-INTRINSIC-NEGATIVE | e6 | 1 | 260 | 30 | TIN BISMUTH | 1SV264-TL-E | 2260 | 3 | compliant | EAR99 | SC-70 / MCP3 | 419AJ | ||||||||||||||||||||||||||||||
BAR6303WE6327HTSA1
Infineon Technologies AG
|
查询价格和库存 |
|
Yes | Not Recommended | 0.3 pF | 250 mW | 2 Ω | SILICON | 50 V | PIN DIODE | SINGLE | YES | 1 | POSITIVE-INTRINSIC-NEGATIVE | SWITCHING | S BAND | 75 ns | R-PDSO-G2 | e3 | 1 | 150 °C | 2 | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | Tin (Sn) | GULL WING | DUAL | BAR6303WE6327HTSA1 | 2065 | R-PDSO-G2 | compliant | EAR99 | 8541.10.00.80 | 7.4 | |||||||||||||||||||
BAR6304WH6327XTSA1
Infineon Technologies AG
|
查询价格和库存 |
|
Yes | Active | 0.3 pF | 250 mW | 2 Ω | SILICON | 50 V | PIN DIODE | SERIES CONNECTED, CENTER TAP, 2 ELEMENTS | YES | 2 | POSITIVE-INTRINSIC-NEGATIVE | SWITCHING | S BAND | 75 ns | R-PDSO-G3 | e3 | 1 | 150 °C | 3 | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | Tin (Sn) | GULL WING | DUAL | BAR6304WH6327XTSA1 | 2065 | R-PDSO-G3 | compliant | EAR99 | 8541.10.00.80 | 7.4 | |||||||||||||||||||
BAR6305WH6327XTSA1
Infineon Technologies AG
|
查询价格和库存 |
|
Yes | Not Recommended | 0.3 pF | 250 mW | 2 Ω | SILICON | 50 V | PIN DIODE | COMMON CATHODE, 2 ELEMENTS | YES | 2 | POSITIVE-INTRINSIC-NEGATIVE | SWITCHING | S BAND | 75 ns | R-PDSO-G3 | e3 | 1 | 150 °C | 3 | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | Tin (Sn) | GULL WING | DUAL | BAR6305WH6327XTSA1 | 2065 | R-PDSO-G3 | compliant | Mainland China | EAR99 | 8541.10.00.80 | 7.4 | ||||||||||||||||||
BAR6404WH6327XTSA1
Infineon Technologies AG
|
查询价格和库存 |
|
Yes | Not Recommended | 0.35 pF | 1.35 Ω | SILICON | 150 V | PIN DIODE | SERIES CONNECTED, CENTER TAP, 2 ELEMENTS | 2 | POSITIVE-INTRINSIC-NEGATIVE | 1.55 µs | e3 | 1 | Tin (Sn) | BAR6404WH6327XTSA1 | 2065 | compliant | EAR99 | ||||||||||||||||||||||||||||||||||
BAR6405WH6327XTSA1
Infineon Technologies AG
|
查询价格和库存 |
|
Yes | Active | 0.35 pF | 1.35 Ω | SILICON | 150 V | PIN DIODE | COMMON CATHODE, 2 ELEMENTS | 2 | POSITIVE-INTRINSIC-NEGATIVE | 1.55 µs | e3 | 1 | Tin (Sn) | BAR6405WH6327XTSA1 | 2065 | compliant | EAR99 | ||||||||||||||||||||||||||||||||||
BAR6302VH6327XTSA1
Infineon Technologies AG
|
查询价格和库存 |
|
Yes | Yes | Active | 0.3 pF | 250 mW | 2 Ω | SILICON | 50 V | PIN DIODE | SINGLE | YES | 1 | POSITIVE-INTRINSIC-NEGATIVE | SWITCHING | S BAND | 75 ns | R-PDSO-F2 | e3 | AEC-Q101 | 1 | 125 °C | -55 °C | 2 | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | Tin (Sn) | FLAT | DUAL | BAR6302VH6327XTSA1 | 2065 | R-PDSO-F2 | 2 | compliant | EAR99 | 8541.10.00.80 | 7.4 | SC-79 | ||||||||||||||
BAR6406WH6327XTSA1
Infineon Technologies AG
|
查询价格和库存 |
|
Yes | Not Recommended | 0.35 pF | 1.35 Ω | SILICON | 150 V | PIN DIODE | COMMON ANODE, 2 ELEMENTS | 2 | POSITIVE-INTRINSIC-NEGATIVE | 1.55 µs | e3 | 1 | Tin (Sn) | BAR6406WH6327XTSA1 | 2065 | compliant | EAR99 | ||||||||||||||||||||||||||||||||||
NSDP301MX3T5G
onsemi
|
查询价格和库存 |
|
Yes | Active | 0.33 pF | SILICON | 80 V | PIN DIODE | SINGLE | YES | 1 | POSITIVE-INTRINSIC-NEGATIVE | ATTENUATOR; SWITCHING | HIGH FREQUENCY | R-PBCC-N2 | e4 | 1 | 150 °C | -55 °C | 260 | 30 | 2 | PLASTIC/EPOXY | RECTANGULAR | CHIP CARRIER | NICKEL PALLADIUM GOLD | NO LEAD | BOTTOM | NSDP301MX3T5G | 2260 | X3DFN-2 | compliant | 6.97 | X3DFN-2 | 152AF | |||||||||||||||||||
NSVP264SDSF3T1G
onsemi
|
查询价格和库存 |
|
Yes | Active | 0.4 pF | 0.23 pF | 100 mW | 4.5 Ω | SILICON | 50 V | PIN DIODE | SERIES CONNECTED, CENTER TAP, 2 ELEMENTS | YES | 2 | POSITIVE-INTRINSIC-NEGATIVE | 10 mA | 100 MHz | VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY | 50 V | R-PDSO-G3 | e6 | AEC-Q101 | 1 | 125 °C | -55 °C | NOT SPECIFIED | NOT SPECIFIED | 3 | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | Tin/Bismuth (Sn/Bi) | GULL WING | DUAL | NSVP264SDSF3T1G | 2260 | SC-70, 3 PIN | compliant | Mainland China | EAR99 | 8541.10.00.80 | 7.4 | SC-70 / MCP3 | 419AJ | ||||||||||
MA4P4002F-1091T
MACOM
|
查询价格和库存 |
|
Yes | Yes | Active | 2.2 pF | 2.2 pF | 7.5 W | 500 mΩ | SILICON | 200 V | PIN DIODE | SINGLE | YES | 1 | POSITIVE-INTRINSIC-NEGATIVE | LOW DISTORTION | ATTENUATOR; SWITCHING | 100 mA | 100 MHz | HIGH FREQUENCY TO ULTRA HIGH FREQUENCY | 6 µs | 100 V | Not Qualified | O-CELF-R2 | 175 °C | NOT SPECIFIED | NOT SPECIFIED | ISOLATED | 2 | CERAMIC, METAL-SEALED COFIRED | ROUND | LONG FORM | WRAP AROUND | END | 2149 | ROHS COMPLIANT, CERAMIC, CASE 1072, 2 PIN | 2 | compliant | EAR99 | 8541.10.00.80 | 5.45 | CASE 1072 | |||||||||||
BAR6502VH6327XTSA1
Infineon Technologies AG
|
查询价格和库存 |
|
Yes | Active | PIN DIODE | e3 | 1 | Matte Tin (Sn) | BAR6502VH6327XTSA1 | 2065 | compliant | EAR99 | ||||||||||||||||||||||||||||||||||||||||||
BA885E6327
Infineon Technologies AG
|
查询价格和库存 |
|
Yes | Yes | Active | 0.4 pF | 0.26 pF | 7 Ω | SILICON | 50 V | PIN DIODE | SINGLE | YES | 1 | POSITIVE-INTRINSIC-NEGATIVE | ATTENUATOR; SWITCHING | 1.5 mA | 100 MHz | MEDIUM FREQUENCY TO L BAND | 1.6 µs | Not Qualified | R-PDSO-G3 | e3 | 1 | 150 °C | 260 | 3 | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | MATTE TIN | GULL WING | DUAL | BA885E6327 | 2065 | SOT-23, 3 PIN | 3 | compliant | EAR99 | 8541.10.00.80 | 7.4 | SOT-23 | ||||||||||||
BAR6702VH6327XTSA1
Infineon Technologies AG
|
查询价格和库存 |
|
Yes | Active | 0.9 pF | 250 mW | 1.8 Ω | SILICON | 150 V | PIN DIODE | SINGLE | YES | 1 | POSITIVE-INTRINSIC-NEGATIVE | ATTENUATOR; SWITCHING | L BAND | 700 ns | R-PDSO-F2 | e3 | 1 | 150 °C | 2 | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | Tin (Sn) | FLAT | DUAL | BAR6702VH6327XTSA1 | 2065 | R-PDSO-F2 | compliant | EAR99 | 8541.10.00.80 | 7.4 | |||||||||||||||||||
BAR66E6327HTSA1
Infineon Technologies AG
|
查询价格和库存 |
|
Yes | Yes | Not Recommended | 0.6 pF | 250 mW | 1.8 Ω | SILICON | 150 V | PIN DIODE | SERIES CONNECTED, CENTER TAP, 2 ELEMENTS | YES | 2 | POSITIVE-INTRINSIC-NEGATIVE | 700 ns | Not Qualified | R-PDSO-G3 | 1 | 260 | 3 | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | GULL WING | DUAL | BAR66E6327HTSA1 | 2065 | R-PDSO-G3 | compliant | Mainland China | EAR99 | 8541.10.00.80 | 7.4 |