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SRAM:

539,038 个筛选结果
静态随机存取存储器(Static Random-Access Memory,SRAM)是随机存取存储器的一种。所谓的“静态”,是指这种存储器只要保持通电,里面储存的数据就可以恒常保持。相对之下,动态随机存取存储器(DRAM)里面所储存的数据就需要周期性地更新。然而,当电力供应停止时,SRAM储存的数据还是会消失(被称为volatile memory),这与在断电后还能储存资料的ROM或闪存是不同的。
SRAM (539,038)
闪存 (312,420)
DRAM (266,030)
EEPROM (146,547)
FIFO (71,234)
OTP ROM (37,472)
EPROM (21,819)
MASK ROM (10,038)
PROM (70)
型号
最长访问时间 (50)
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最大时钟频率 (fCLK) (50)
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制造商 (50)
内存密度 (50)
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内存宽度 (36)
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组织 (50)
型号
型号 Most Relevant Technical Compliance Operating Conditions Physical Dimensions Other
数据手册 单价/库存
风险等级 是否无铅 是否Rohs认证
生命周期 内存密度 内存宽度 组织 标称供电电压 (Vsup)
最长访问时间 最大时钟频率 (fCLK) 内存集成电路类型 其他特性 I/O 类型 功能数量 端口数量 字数代码 字数 工作模式 输出特性 可输出 并行/串行 最大待机电流
最小待机电流
最大压摆率
最大供电电压 (Vsup)
最小供电电压 (Vsup)
技术 温度等级
JESD-30 代码 认证状态
JESD-609代码 湿度敏感等级 最高工作温度 最低工作温度 峰值回流温度(摄氏度) 处于峰值回流温度下的最长时间
端子数量 封装主体材料 封装代码 封装等效代码 封装形状 封装形式 表面贴装
端子面层
端子形式
端子节距
端子位置
座面最大高度
长度 宽度
mfrid
零件包装代码
包装说明
针数
是否符合REACH标准
Country Of Origin
ECCN代码
HTS代码
YTEOL
Source Content uid
制造商包装代码
GS880Z36CGT-200
GSI Technology
查询价格和库存
Yes Yes Active 9.4372 Mbit 36 256KX36 2.5 V 6.5 ns ZBT SRAM FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES AT 2.5V SUPPLY 1 256000 262.144 k SYNCHRONOUS PARALLEL 2.7 V 2.3 V CMOS COMMERCIAL R-PQFP-G100 Not Qualified e3 3 70 °C 260 100 PLASTIC/EPOXY LQFP RECTANGULAR FLATPACK, LOW PROFILE YES MATTE TIN GULL WING 650 µm QUAD 1.6 mm 20 mm 14 mm 2017 QFP LQFP, 100 compliant Taiwan 3A991.B.2.B 8542.32.00.41 5.2
R1LP0408DSP-5SI#S1
Renesas Electronics Corporation
查询价格和库存
Yes Yes Active 4.1943 Mbit 8 512KX8 5 V 55 ns STANDARD SRAM 1 512000 524.288 k ASYNCHRONOUS PARALLEL 5.5 V 4.5 V CMOS INDUSTRIAL R-PDSO-G32 3 85 °C -40 °C 32 PLASTIC/EPOXY SOP RECTANGULAR SMALL OUTLINE YES GULL WING DUAL 2354 SOP(32) SOP, 32 compliant 3A991.B.2.A 8542.32.00.41 8 R1LP0408DSP-5SI#S1 PRSP0032DF
GS8322Z36AGB-200I
GSI Technology
查询价格和库存
Yes Yes Active 37.7487 Mbit 36 1MX36 2.5 V 6.5 ns 200 MHz ZBT SRAM ALSO OPERATES AT 3.3V SUPPLY, PIPELINED ARCHITECTURE, FLOW THROUGH COMMON 1 1000000 1.0486 M SYNCHRONOUS 3-STATE PARALLEL 40 mA 2.3 V 235 µA 2.7 V 2.3 V CMOS INDUSTRIAL R-PBGA-B119 Not Qualified e1 3 85 °C -40 °C 119 PLASTIC/EPOXY BGA BGA119,7X17,50 RECTANGULAR GRID ARRAY YES TIN SILVER COPPER BALL 1.27 mm BOTTOM 1.99 mm 22 mm 14 mm 2017 BGA BGA, BGA119,7X17,50 119 compliant Taiwan 3A991.B.2.B 8542.32.00.41 6.2
GS832132AGD-150I
GSI Technology
查询价格和库存
Yes Active 33.5544 Mbit 32 1MX32 2.5 V 7.5 ns 150 MHz CACHE SRAM PIPELINE OR FLOW THROUGH ARCHITECTUREL; ALSO OPERATES AT 3.3 V SUPPLY COMMON 1 1000000 1.0486 M SYNCHRONOUS 3-STATE PARALLEL 40 mA 2.3 V 195 µA 2.7 V 2.3 V CMOS INDUSTRIAL R-PBGA-B165 Not Qualified 85 °C -40 °C NOT SPECIFIED NOT SPECIFIED 165 PLASTIC/EPOXY LBGA BGA165,11X15,40 RECTANGULAR GRID ARRAY, LOW PROFILE YES BALL 1 mm BOTTOM 1.4 mm 15 mm 13 mm 2017 BGA LBGA, BGA165,11X15,40 165 compliant Taiwan 3A991.B.2.B 8542.32.00.41 6.15
GS8321Z36AGD-150I
GSI Technology
查询价格和库存
Yes Yes Active 37.7487 Mbit 36 1MX36 2.5 V 7.5 ns ZBT SRAM IT ALSO OPERATES AT 3 V TO 3.6 V SUPPLY VOLTAGE 1 1000000 1.0486 M SYNCHRONOUS PARALLEL 2.7 V 2.3 V CMOS R-PBGA-B165 Not Qualified e1 3 100 °C -40 °C 260 165 PLASTIC/EPOXY LBGA RECTANGULAR GRID ARRAY, LOW PROFILE YES TIN SILVER COPPER BALL 1 mm BOTTOM 1.4 mm 15 mm 13 mm 2017 BGA LBGA, 165 compliant Taiwan 3A991.B.2.B 8542.32.00.41 6.4
GS8662QT19BGD-333I
GSI Technology
查询价格和库存
Yes Yes Active 75.4975 Mbit 18 4MX18 1.8 V 450 ps QDR SRAM PIPELINED ARCHITECTURE 1 4000000 4.1943 M SYNCHRONOUS PARALLEL 1.9 V 1.7 V CMOS INDUSTRIAL R-PBGA-B165 Not Qualified e1 3 85 °C -40 °C 260 165 PLASTIC/EPOXY LBGA RECTANGULAR GRID ARRAY, LOW PROFILE YES TIN SILVER COPPER BALL 1 mm BOTTOM 1.4 mm 15 mm 13 mm 2017 BGA LBGA, 165 compliant Taiwan 3A991.B.2.B 8542.32.00.41 6.8
GS8128436GB-167
GSI Technology
查询价格和库存
Yes Yes Active 150.9949 Mbit 36 4MX36 2.5 V 8 ns CACHE SRAM PIPELINE AND FLOW THROUGH ARCHITECTURE, IT ALSO OPERATES WITH 3V TO 3.6V SUPPLY 1 4000000 4.1943 M SYNCHRONOUS PARALLEL 2.7 V 2.3 V CMOS COMMERCIAL R-PBGA-B119 Not Qualified e1 3 70 °C 260 119 PLASTIC/EPOXY BGA RECTANGULAR GRID ARRAY YES TIN SILVER COPPER BALL 1.27 mm BOTTOM 1.99 mm 22 mm 14 mm 2017 BGA BGA, 119 compliant Taiwan 3A991.B.2.B 8542.32.00.41 6.8
M48Z02-150PC1
STMicroelectronics
查询价格和库存
Yes Active 16.384 kbit 8 2KX8 5 V STANDARD SRAM COMMON 1 1 2000 2.048 k ASYNCHRONOUS 3-STATE YES PARALLEL 3 mA 4.75 V 80 µA 5.5 V 4.75 V CMOS COMMERCIAL R-PDIP-T24 Not Qualified e3 70 °C NOT SPECIFIED NOT SPECIFIED 24 PLASTIC/EPOXY DIP DIP24,.6 RECTANGULAR IN-LINE NO Matte Tin (Sn) THROUGH-HOLE 2.54 mm DUAL 9.65 mm 34.545 mm 15.24 mm 2443 DIP DIP-24 24 compliant Malaysia EAR99 8542.32.00.41 4 M48Z02-150PC1
GS8644Z36E-250I
GSI Technology
查询价格和库存
No No Active 75.4975 Mbit 36 2MX36 2.5 V 6.5 ns 250 MHz ZBT SRAM ALSO OPERATES AT 3.3V SUPPLY; PIPELINED OR FLOW-THROUGH ARCHITECTURE COMMON 1 2000000 2.0972 M SYNCHRONOUS 3-STATE PARALLEL 160 mA 2.3 V 435 µA 2.7 V 2.3 V CMOS INDUSTRIAL R-PBGA-B165 Not Qualified e0 3 85 °C -40 °C 235 165 PLASTIC/EPOXY BGA BGA165,11X15,40 RECTANGULAR GRID ARRAY YES Tin/Lead (Sn/Pb) BALL 1 mm BOTTOM 1.5 mm 17 mm 15 mm 2017 BGA BGA, BGA165,11X15,40 165 compliant Taiwan 3A991.B.2.B 8542.32.00.41 4.8
GS8161Z36DGT-250I
GSI Technology
查询价格和库存
Yes Active 18.8744 Mbit 36 512KX36 2.5 V 5.5 ns ZBT SRAM ALSO OPERATES AT 3.3V 1 512000 524.288 k SYNCHRONOUS PARALLEL 2.7 V 2.3 V CMOS INDUSTRIAL R-PQFP-G100 e3 3 85 °C -40 °C NOT SPECIFIED NOT SPECIFIED 100 PLASTIC/EPOXY LQFP RECTANGULAR FLATPACK, LOW PROFILE YES Matte Tin (Sn) GULL WING 650 µm QUAD 1.6 mm 20 mm 14 mm 2017 QFP LQFP, 100 compliant Taiwan 3A991.B.2.B 8542.32.00.41 5.45
GS88136CD-250I
GSI Technology
查询价格和库存
No Active 9.4372 Mbit 36 256KX36 3.3 V 5.5 ns CACHE SRAM ALSO OPERATES WITH 2.3V TO 2.7V SUPPLY, FLOW THROUGH OR PIPELINED ARCHITECTURE 1 256000 262.144 k SYNCHRONOUS SERIAL 3.6 V 3 V CMOS INDUSTRIAL R-PBGA-B165 Not Qualified 85 °C -40 °C NOT SPECIFIED NOT SPECIFIED 165 PLASTIC/EPOXY LBGA RECTANGULAR GRID ARRAY, LOW PROFILE YES BALL 1 mm BOTTOM 1.4 mm 15 mm 13 mm 2017 BGA LBGA, 165 compliant Taiwan 3A991.B.2.B 8542.32.00.41 5.15
GS8642Z36B-200IV
GSI Technology
查询价格和库存
No No Active 75.4975 Mbit 36 2MX36 1.8 V 7.5 ns ZBT SRAM FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES AT 2.5V SUPPLY 1 2000000 2.0972 M SYNCHRONOUS PARALLEL 2 V 1.7 V CMOS INDUSTRIAL R-PBGA-B119 Not Qualified e0 85 °C -40 °C 119 PLASTIC/EPOXY BGA RECTANGULAR GRID ARRAY YES TIN LEAD BALL 1.27 mm BOTTOM 1.99 mm 22 mm 14 mm 2017 BGA BGA, 119 compliant Taiwan 3A991.B.2.B 8542.32.00.41 5.33
GS88237CB-200I
GSI Technology
查询价格和库存
No No Active 9.4372 Mbit 36 256KX36 2.5 V 2.7 ns CACHE SRAM PIPELINED ARCHITECTURE; ALSO OPERATES AT 3.3V SUPPLY 1 256000 262.144 k SYNCHRONOUS PARALLEL 2.7 V 2.3 V CMOS INDUSTRIAL R-PBGA-B119 Not Qualified e0 85 °C -40 °C 119 PLASTIC/EPOXY BGA RECTANGULAR GRID ARRAY YES TIN LEAD BALL 1.27 mm BOTTOM 1.77 mm 22 mm 14 mm 2017 BGA BGA, 119 compliant Taiwan 3A991.B.2.B 8542.32.00.41 4.16
GS8642Z72C-200I
GSI Technology
查询价格和库存
No No Active 75.4975 Mbit 72 1MX72 2.5 V 7.5 ns 200 MHz ZBT SRAM FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES AT 3.3V SUPPLY COMMON 1 1000000 1.0486 M SYNCHRONOUS 3-STATE PARALLEL 120 mA 2.3 V 405 µA 2.7 V 2.3 V CMOS INDUSTRIAL R-PBGA-B209 Not Qualified e0 3 85 °C -40 °C 220 209 PLASTIC/EPOXY LBGA BGA209,11X19,40 RECTANGULAR GRID ARRAY, LOW PROFILE YES Tin/Lead (Sn/Pb) BALL 1 mm BOTTOM 1.7 mm 22 mm 14 mm 2017 BGA LBGA, BGA209,11X19,40 209 compliant Taiwan 3A991.B.2.B 8542.32.00.41 4.95
GS81284Z36B-250I
GSI Technology
查询价格和库存
No No Active 150.9949 Mbit 36 4MX36 2.5 V 6.5 ns ZBT SRAM FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES WITH 3.3V 1 4000000 4.1943 M SYNCHRONOUS PARALLEL 2.7 V 2.3 V CMOS INDUSTRIAL R-PBGA-B119 Not Qualified e0 85 °C -40 °C 119 PLASTIC/EPOXY BGA RECTANGULAR GRID ARRAY YES TIN LEAD BALL 1.27 mm BOTTOM 1.99 mm 22 mm 14 mm 2017 BGA BGA, 119 compliant Taiwan 3A991.B.2.B 8542.32.00.41 4.99
GS8128436B-167I
GSI Technology
查询价格和库存
No No Active 150.9949 Mbit 36 4MX36 2.5 V 8 ns CACHE SRAM PIPELINE AND FLOW THROUGH ARCHITECTURE, IT ALSO OPERATES WITH 3V TO 3.6V SUPPLY 1 4000000 4.1943 M SYNCHRONOUS PARALLEL 2.7 V 2.3 V CMOS INDUSTRIAL R-PBGA-B119 Not Qualified e0 85 °C -40 °C 119 PLASTIC/EPOXY BGA RECTANGULAR GRID ARRAY YES TIN LEAD BALL 1.27 mm BOTTOM 1.99 mm 22 mm 14 mm 2017 BGA BGA, 119 compliant Taiwan 3A991.B.2.B 8542.32.00.41 5.1
GS84036CGT-166I
GSI Technology
查询价格和库存
Yes Active 4.7186 Mbit 36 128KX36 3.3 V 7 ns CACHE SRAM FLOW-THROUGH OR PIPELINED ARCHITECTURE 1 128000 131.072 k SYNCHRONOUS PARALLEL 3.6 V 3 V CMOS INDUSTRIAL R-PQFP-G100 3 85 °C -40 °C 100 PLASTIC/EPOXY LQFP RECTANGULAR FLATPACK, LOW PROFILE YES PURE MATTE TIN GULL WING 650 µm QUAD 1.6 mm 20 mm 14 mm 2017 TQFP-100 compliant Taiwan 3A991.B.2.B 8542.32.00.41 4.75
GS8320Z18AGT-250V
GSI Technology
查询价格和库存
Yes Active 37.7487 Mbit 18 2MX18 1.8 V 5.5 ns 250 MHz ZBT SRAM ALSO OPERATES AT 2.5 COMMON 1 2000000 2.0972 M SYNCHRONOUS 3-STATE PARALLEL 30 mA 1.7 V 210 µA 2 V 1.7 V CMOS OTHER R-PQFP-G100 Not Qualified e3 3 85 °C NOT SPECIFIED NOT SPECIFIED 100 PLASTIC/EPOXY LQFP QFP100,.63X.87 RECTANGULAR FLATPACK, LOW PROFILE YES Matte Tin (Sn) GULL WING 650 µm QUAD 1.6 mm 20 mm 14 mm 2017 QFP LQFP, QFP100,.63X.87 100 compliant Taiwan 3A991.B.2.B 8542.32.00.41 7.02
GS8160Z18DGT-200I
GSI Technology
查询价格和库存
Yes Active 18.8744 Mbit 18 1MX18 2.5 V ZBT SRAM IT ALSO OPERATES AT 3 V TO 3.6 V SUPPLY VOLTAGE 1 1000000 1.0486 M SYNCHRONOUS PARALLEL 2.7 V 2.3 V CMOS R-PQFP-G100 e3 3 NOT SPECIFIED NOT SPECIFIED 100 PLASTIC/EPOXY LQFP RECTANGULAR FLATPACK, LOW PROFILE YES Matte Tin (Sn) GULL WING 650 µm QUAD 1.6 mm 20 mm 14 mm 2017 LQFP, compliant Taiwan 3A991.B.2.B 8542.32.00.41 5.45
IS61WV25616BLL-10TLI
Integrated Silicon Solution Inc
查询价格和库存
Yes Yes Active 4.1943 Mbit 16 256KX16 3 V 10 ns STANDARD SRAM COMMON 1 256000 262.144 k ASYNCHRONOUS 3-STATE PARALLEL 9 mA 2 V 45 µA 3.6 V 2.4 V CMOS INDUSTRIAL R-PDSO-G44 Not Qualified e3 3 85 °C -40 °C 260 30 44 PLASTIC/EPOXY TSOP2 TSOP44,.46,32 RECTANGULAR SMALL OUTLINE, THIN PROFILE YES MATTE TIN GULL WING 800 µm DUAL 1.2 mm 18.415 mm 10.16 mm 2070 TSOP2 TSOP2-44 44 compliant Mainland China, Taiwan 3A991.B.2.A 8542.32.00.41 4.9
型号 Most Relevant Technical Compliance Operating Conditions Physical Dimensions Other
数据手册 单价/库存
风险等级 是否无铅 是否Rohs认证
生命周期 内存密度 内存宽度 组织 标称供电电压 (Vsup)
最长访问时间 最大时钟频率 (fCLK) 内存集成电路类型 其他特性 I/O 类型 功能数量 端口数量 字数代码 字数 工作模式 输出特性 可输出 并行/串行 最大待机电流
最小待机电流
最大压摆率
最大供电电压 (Vsup)
最小供电电压 (Vsup)
技术 温度等级
JESD-30 代码 认证状态
JESD-609代码 湿度敏感等级 最高工作温度 最低工作温度 峰值回流温度(摄氏度) 处于峰值回流温度下的最长时间
端子数量 封装主体材料 封装代码 封装等效代码 封装形状 封装形式 表面贴装
端子面层
端子形式