型号 | Most Relevant | Technical | Compliance | Operating Conditions | Physical | Dimensions | Other | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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数据手册 |
单价/库存
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风险等级 | 是否无铅 |
是否Rohs认证
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生命周期 | 内存密度 | 内存宽度 | 组织 |
标称供电电压 (Vsup)
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最长访问时间 | 最大时钟频率 (fCLK) | 内存集成电路类型 | 其他特性 | I/O 类型 | 功能数量 | 端口数量 | 字数代码 | 字数 | 工作模式 | 输出特性 | 可输出 | 并行/串行 |
最大待机电流
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最小待机电流
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最大压摆率
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最大供电电压 (Vsup)
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最小供电电压 (Vsup)
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技术 |
温度等级
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JESD-30 代码 |
认证状态
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JESD-609代码 | 湿度敏感等级 | 最高工作温度 | 最低工作温度 | 峰值回流温度(摄氏度) |
处于峰值回流温度下的最长时间
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端子数量 | 封装主体材料 | 封装代码 | 封装等效代码 | 封装形状 | 封装形式 |
表面贴装
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端子面层
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端子形式
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端子节距
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端子位置
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座面最大高度
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长度 |
宽度
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mfrid
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零件包装代码
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包装说明
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针数
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是否符合REACH标准
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Country Of Origin
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ECCN代码
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HTS代码
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YTEOL
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Source Content uid
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制造商包装代码
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GS880Z36CGT-200
GSI Technology
|
查询价格和库存 |
|
Yes | Yes | Active | 9.4372 Mbit | 36 | 256KX36 | 2.5 V | 6.5 ns | ZBT SRAM | FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES AT 2.5V SUPPLY | 1 | 256000 | 262.144 k | SYNCHRONOUS | PARALLEL | 2.7 V | 2.3 V | CMOS | COMMERCIAL | R-PQFP-G100 | Not Qualified | e3 | 3 | 70 °C | 260 | 100 | PLASTIC/EPOXY | LQFP | RECTANGULAR | FLATPACK, LOW PROFILE | YES | MATTE TIN | GULL WING | 650 µm | QUAD | 1.6 mm | 20 mm | 14 mm | 2017 | QFP | LQFP, | 100 | compliant | Taiwan | 3A991.B.2.B | 8542.32.00.41 | 5.2 | |||||||||||||||
R1LP0408DSP-5SI#S1
Renesas Electronics Corporation
|
查询价格和库存 |
|
Yes | Yes | Active | 4.1943 Mbit | 8 | 512KX8 | 5 V | 55 ns | STANDARD SRAM | 1 | 512000 | 524.288 k | ASYNCHRONOUS | PARALLEL | 5.5 V | 4.5 V | CMOS | INDUSTRIAL | R-PDSO-G32 | 3 | 85 °C | -40 °C | 32 | PLASTIC/EPOXY | SOP | RECTANGULAR | SMALL OUTLINE | YES | GULL WING | DUAL | 2354 | SOP(32) | SOP, | 32 | compliant | 3A991.B.2.A | 8542.32.00.41 | 8 | R1LP0408DSP-5SI#S1 | PRSP0032DF | ||||||||||||||||||||||
GS8322Z36AGB-200I
GSI Technology
|
查询价格和库存 |
|
Yes | Yes | Active | 37.7487 Mbit | 36 | 1MX36 | 2.5 V | 6.5 ns | 200 MHz | ZBT SRAM | ALSO OPERATES AT 3.3V SUPPLY, PIPELINED ARCHITECTURE, FLOW THROUGH | COMMON | 1 | 1000000 | 1.0486 M | SYNCHRONOUS | 3-STATE | PARALLEL | 40 mA | 2.3 V | 235 µA | 2.7 V | 2.3 V | CMOS | INDUSTRIAL | R-PBGA-B119 | Not Qualified | e1 | 3 | 85 °C | -40 °C | 119 | PLASTIC/EPOXY | BGA | BGA119,7X17,50 | RECTANGULAR | GRID ARRAY | YES | TIN SILVER COPPER | BALL | 1.27 mm | BOTTOM | 1.99 mm | 22 mm | 14 mm | 2017 | BGA | BGA, BGA119,7X17,50 | 119 | compliant | Taiwan | 3A991.B.2.B | 8542.32.00.41 | 6.2 | ||||||||
GS832132AGD-150I
GSI Technology
|
查询价格和库存 |
|
Yes | Active | 33.5544 Mbit | 32 | 1MX32 | 2.5 V | 7.5 ns | 150 MHz | CACHE SRAM | PIPELINE OR FLOW THROUGH ARCHITECTUREL; ALSO OPERATES AT 3.3 V SUPPLY | COMMON | 1 | 1000000 | 1.0486 M | SYNCHRONOUS | 3-STATE | PARALLEL | 40 mA | 2.3 V | 195 µA | 2.7 V | 2.3 V | CMOS | INDUSTRIAL | R-PBGA-B165 | Not Qualified | 85 °C | -40 °C | NOT SPECIFIED | NOT SPECIFIED | 165 | PLASTIC/EPOXY | LBGA | BGA165,11X15,40 | RECTANGULAR | GRID ARRAY, LOW PROFILE | YES | BALL | 1 mm | BOTTOM | 1.4 mm | 15 mm | 13 mm | 2017 | BGA | LBGA, BGA165,11X15,40 | 165 | compliant | Taiwan | 3A991.B.2.B | 8542.32.00.41 | 6.15 | ||||||||||
GS8321Z36AGD-150I
GSI Technology
|
查询价格和库存 |
|
Yes | Yes | Active | 37.7487 Mbit | 36 | 1MX36 | 2.5 V | 7.5 ns | ZBT SRAM | IT ALSO OPERATES AT 3 V TO 3.6 V SUPPLY VOLTAGE | 1 | 1000000 | 1.0486 M | SYNCHRONOUS | PARALLEL | 2.7 V | 2.3 V | CMOS | R-PBGA-B165 | Not Qualified | e1 | 3 | 100 °C | -40 °C | 260 | 165 | PLASTIC/EPOXY | LBGA | RECTANGULAR | GRID ARRAY, LOW PROFILE | YES | TIN SILVER COPPER | BALL | 1 mm | BOTTOM | 1.4 mm | 15 mm | 13 mm | 2017 | BGA | LBGA, | 165 | compliant | Taiwan | 3A991.B.2.B | 8542.32.00.41 | 6.4 | |||||||||||||||
GS8662QT19BGD-333I
GSI Technology
|
查询价格和库存 |
|
Yes | Yes | Active | 75.4975 Mbit | 18 | 4MX18 | 1.8 V | 450 ps | QDR SRAM | PIPELINED ARCHITECTURE | 1 | 4000000 | 4.1943 M | SYNCHRONOUS | PARALLEL | 1.9 V | 1.7 V | CMOS | INDUSTRIAL | R-PBGA-B165 | Not Qualified | e1 | 3 | 85 °C | -40 °C | 260 | 165 | PLASTIC/EPOXY | LBGA | RECTANGULAR | GRID ARRAY, LOW PROFILE | YES | TIN SILVER COPPER | BALL | 1 mm | BOTTOM | 1.4 mm | 15 mm | 13 mm | 2017 | BGA | LBGA, | 165 | compliant | Taiwan | 3A991.B.2.B | 8542.32.00.41 | 6.8 | ||||||||||||||
GS8128436GB-167
GSI Technology
|
查询价格和库存 |
|
Yes | Yes | Active | 150.9949 Mbit | 36 | 4MX36 | 2.5 V | 8 ns | CACHE SRAM | PIPELINE AND FLOW THROUGH ARCHITECTURE, IT ALSO OPERATES WITH 3V TO 3.6V SUPPLY | 1 | 4000000 | 4.1943 M | SYNCHRONOUS | PARALLEL | 2.7 V | 2.3 V | CMOS | COMMERCIAL | R-PBGA-B119 | Not Qualified | e1 | 3 | 70 °C | 260 | 119 | PLASTIC/EPOXY | BGA | RECTANGULAR | GRID ARRAY | YES | TIN SILVER COPPER | BALL | 1.27 mm | BOTTOM | 1.99 mm | 22 mm | 14 mm | 2017 | BGA | BGA, | 119 | compliant | Taiwan | 3A991.B.2.B | 8542.32.00.41 | 6.8 | |||||||||||||||
M48Z02-150PC1
STMicroelectronics
|
查询价格和库存 |
|
Yes | Active | 16.384 kbit | 8 | 2KX8 | 5 V | STANDARD SRAM | COMMON | 1 | 1 | 2000 | 2.048 k | ASYNCHRONOUS | 3-STATE | YES | PARALLEL | 3 mA | 4.75 V | 80 µA | 5.5 V | 4.75 V | CMOS | COMMERCIAL | R-PDIP-T24 | Not Qualified | e3 | 70 °C | NOT SPECIFIED | NOT SPECIFIED | 24 | PLASTIC/EPOXY | DIP | DIP24,.6 | RECTANGULAR | IN-LINE | NO | Matte Tin (Sn) | THROUGH-HOLE | 2.54 mm | DUAL | 9.65 mm | 34.545 mm | 15.24 mm | 2443 | DIP | DIP-24 | 24 | compliant | Malaysia | EAR99 | 8542.32.00.41 | 4 | M48Z02-150PC1 | |||||||||
GS8644Z36E-250I
GSI Technology
|
查询价格和库存 |
|
No | No | Active | 75.4975 Mbit | 36 | 2MX36 | 2.5 V | 6.5 ns | 250 MHz | ZBT SRAM | ALSO OPERATES AT 3.3V SUPPLY; PIPELINED OR FLOW-THROUGH ARCHITECTURE | COMMON | 1 | 2000000 | 2.0972 M | SYNCHRONOUS | 3-STATE | PARALLEL | 160 mA | 2.3 V | 435 µA | 2.7 V | 2.3 V | CMOS | INDUSTRIAL | R-PBGA-B165 | Not Qualified | e0 | 3 | 85 °C | -40 °C | 235 | 165 | PLASTIC/EPOXY | BGA | BGA165,11X15,40 | RECTANGULAR | GRID ARRAY | YES | Tin/Lead (Sn/Pb) | BALL | 1 mm | BOTTOM | 1.5 mm | 17 mm | 15 mm | 2017 | BGA | BGA, BGA165,11X15,40 | 165 | compliant | Taiwan | 3A991.B.2.B | 8542.32.00.41 | 4.8 | |||||||
GS8161Z36DGT-250I
GSI Technology
|
查询价格和库存 |
|
Yes | Active | 18.8744 Mbit | 36 | 512KX36 | 2.5 V | 5.5 ns | ZBT SRAM | ALSO OPERATES AT 3.3V | 1 | 512000 | 524.288 k | SYNCHRONOUS | PARALLEL | 2.7 V | 2.3 V | CMOS | INDUSTRIAL | R-PQFP-G100 | e3 | 3 | 85 °C | -40 °C | NOT SPECIFIED | NOT SPECIFIED | 100 | PLASTIC/EPOXY | LQFP | RECTANGULAR | FLATPACK, LOW PROFILE | YES | Matte Tin (Sn) | GULL WING | 650 µm | QUAD | 1.6 mm | 20 mm | 14 mm | 2017 | QFP | LQFP, | 100 | compliant | Taiwan | 3A991.B.2.B | 8542.32.00.41 | 5.45 | |||||||||||||||
GS88136CD-250I
GSI Technology
|
查询价格和库存 |
|
No | Active | 9.4372 Mbit | 36 | 256KX36 | 3.3 V | 5.5 ns | CACHE SRAM | ALSO OPERATES WITH 2.3V TO 2.7V SUPPLY, FLOW THROUGH OR PIPELINED ARCHITECTURE | 1 | 256000 | 262.144 k | SYNCHRONOUS | SERIAL | 3.6 V | 3 V | CMOS | INDUSTRIAL | R-PBGA-B165 | Not Qualified | 85 °C | -40 °C | NOT SPECIFIED | NOT SPECIFIED | 165 | PLASTIC/EPOXY | LBGA | RECTANGULAR | GRID ARRAY, LOW PROFILE | YES | BALL | 1 mm | BOTTOM | 1.4 mm | 15 mm | 13 mm | 2017 | BGA | LBGA, | 165 | compliant | Taiwan | 3A991.B.2.B | 8542.32.00.41 | 5.15 | |||||||||||||||||
GS8642Z36B-200IV
GSI Technology
|
查询价格和库存 |
|
No | No | Active | 75.4975 Mbit | 36 | 2MX36 | 1.8 V | 7.5 ns | ZBT SRAM | FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES AT 2.5V SUPPLY | 1 | 2000000 | 2.0972 M | SYNCHRONOUS | PARALLEL | 2 V | 1.7 V | CMOS | INDUSTRIAL | R-PBGA-B119 | Not Qualified | e0 | 85 °C | -40 °C | 119 | PLASTIC/EPOXY | BGA | RECTANGULAR | GRID ARRAY | YES | TIN LEAD | BALL | 1.27 mm | BOTTOM | 1.99 mm | 22 mm | 14 mm | 2017 | BGA | BGA, | 119 | compliant | Taiwan | 3A991.B.2.B | 8542.32.00.41 | 5.33 | ||||||||||||||||
GS88237CB-200I
GSI Technology
|
查询价格和库存 |
|
No | No | Active | 9.4372 Mbit | 36 | 256KX36 | 2.5 V | 2.7 ns | CACHE SRAM | PIPELINED ARCHITECTURE; ALSO OPERATES AT 3.3V SUPPLY | 1 | 256000 | 262.144 k | SYNCHRONOUS | PARALLEL | 2.7 V | 2.3 V | CMOS | INDUSTRIAL | R-PBGA-B119 | Not Qualified | e0 | 85 °C | -40 °C | 119 | PLASTIC/EPOXY | BGA | RECTANGULAR | GRID ARRAY | YES | TIN LEAD | BALL | 1.27 mm | BOTTOM | 1.77 mm | 22 mm | 14 mm | 2017 | BGA | BGA, | 119 | compliant | Taiwan | 3A991.B.2.B | 8542.32.00.41 | 4.16 | ||||||||||||||||
GS8642Z72C-200I
GSI Technology
|
查询价格和库存 |
|
No | No | Active | 75.4975 Mbit | 72 | 1MX72 | 2.5 V | 7.5 ns | 200 MHz | ZBT SRAM | FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES AT 3.3V SUPPLY | COMMON | 1 | 1000000 | 1.0486 M | SYNCHRONOUS | 3-STATE | PARALLEL | 120 mA | 2.3 V | 405 µA | 2.7 V | 2.3 V | CMOS | INDUSTRIAL | R-PBGA-B209 | Not Qualified | e0 | 3 | 85 °C | -40 °C | 220 | 209 | PLASTIC/EPOXY | LBGA | BGA209,11X19,40 | RECTANGULAR | GRID ARRAY, LOW PROFILE | YES | Tin/Lead (Sn/Pb) | BALL | 1 mm | BOTTOM | 1.7 mm | 22 mm | 14 mm | 2017 | BGA | LBGA, BGA209,11X19,40 | 209 | compliant | Taiwan | 3A991.B.2.B | 8542.32.00.41 | 4.95 | |||||||
GS81284Z36B-250I
GSI Technology
|
查询价格和库存 |
|
No | No | Active | 150.9949 Mbit | 36 | 4MX36 | 2.5 V | 6.5 ns | ZBT SRAM | FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES WITH 3.3V | 1 | 4000000 | 4.1943 M | SYNCHRONOUS | PARALLEL | 2.7 V | 2.3 V | CMOS | INDUSTRIAL | R-PBGA-B119 | Not Qualified | e0 | 85 °C | -40 °C | 119 | PLASTIC/EPOXY | BGA | RECTANGULAR | GRID ARRAY | YES | TIN LEAD | BALL | 1.27 mm | BOTTOM | 1.99 mm | 22 mm | 14 mm | 2017 | BGA | BGA, | 119 | compliant | Taiwan | 3A991.B.2.B | 8542.32.00.41 | 4.99 | ||||||||||||||||
GS8128436B-167I
GSI Technology
|
查询价格和库存 |
|
No | No | Active | 150.9949 Mbit | 36 | 4MX36 | 2.5 V | 8 ns | CACHE SRAM | PIPELINE AND FLOW THROUGH ARCHITECTURE, IT ALSO OPERATES WITH 3V TO 3.6V SUPPLY | 1 | 4000000 | 4.1943 M | SYNCHRONOUS | PARALLEL | 2.7 V | 2.3 V | CMOS | INDUSTRIAL | R-PBGA-B119 | Not Qualified | e0 | 85 °C | -40 °C | 119 | PLASTIC/EPOXY | BGA | RECTANGULAR | GRID ARRAY | YES | TIN LEAD | BALL | 1.27 mm | BOTTOM | 1.99 mm | 22 mm | 14 mm | 2017 | BGA | BGA, | 119 | compliant | Taiwan | 3A991.B.2.B | 8542.32.00.41 | 5.1 | ||||||||||||||||
GS84036CGT-166I
GSI Technology
|
查询价格和库存 |
|
Yes | Active | 4.7186 Mbit | 36 | 128KX36 | 3.3 V | 7 ns | CACHE SRAM | FLOW-THROUGH OR PIPELINED ARCHITECTURE | 1 | 128000 | 131.072 k | SYNCHRONOUS | PARALLEL | 3.6 V | 3 V | CMOS | INDUSTRIAL | R-PQFP-G100 | 3 | 85 °C | -40 °C | 100 | PLASTIC/EPOXY | LQFP | RECTANGULAR | FLATPACK, LOW PROFILE | YES | PURE MATTE TIN | GULL WING | 650 µm | QUAD | 1.6 mm | 20 mm | 14 mm | 2017 | TQFP-100 | compliant | Taiwan | 3A991.B.2.B | 8542.32.00.41 | 4.75 | ||||||||||||||||||||
GS8320Z18AGT-250V
GSI Technology
|
查询价格和库存 |
|
Yes | Active | 37.7487 Mbit | 18 | 2MX18 | 1.8 V | 5.5 ns | 250 MHz | ZBT SRAM | ALSO OPERATES AT 2.5 | COMMON | 1 | 2000000 | 2.0972 M | SYNCHRONOUS | 3-STATE | PARALLEL | 30 mA | 1.7 V | 210 µA | 2 V | 1.7 V | CMOS | OTHER | R-PQFP-G100 | Not Qualified | e3 | 3 | 85 °C | NOT SPECIFIED | NOT SPECIFIED | 100 | PLASTIC/EPOXY | LQFP | QFP100,.63X.87 | RECTANGULAR | FLATPACK, LOW PROFILE | YES | Matte Tin (Sn) | GULL WING | 650 µm | QUAD | 1.6 mm | 20 mm | 14 mm | 2017 | QFP | LQFP, QFP100,.63X.87 | 100 | compliant | Taiwan | 3A991.B.2.B | 8542.32.00.41 | 7.02 | ||||||||
GS8160Z18DGT-200I
GSI Technology
|
查询价格和库存 |
|
Yes | Active | 18.8744 Mbit | 18 | 1MX18 | 2.5 V | ZBT SRAM | IT ALSO OPERATES AT 3 V TO 3.6 V SUPPLY VOLTAGE | 1 | 1000000 | 1.0486 M | SYNCHRONOUS | PARALLEL | 2.7 V | 2.3 V | CMOS | R-PQFP-G100 | e3 | 3 | NOT SPECIFIED | NOT SPECIFIED | 100 | PLASTIC/EPOXY | LQFP | RECTANGULAR | FLATPACK, LOW PROFILE | YES | Matte Tin (Sn) | GULL WING | 650 µm | QUAD | 1.6 mm | 20 mm | 14 mm | 2017 | LQFP, | compliant | Taiwan | 3A991.B.2.B | 8542.32.00.41 | 5.45 | |||||||||||||||||||||
IS61WV25616BLL-10TLI
Integrated Silicon Solution Inc
|
查询价格和库存 |
|
Yes | Yes | Active | 4.1943 Mbit | 16 | 256KX16 | 3 V | 10 ns | STANDARD SRAM | COMMON | 1 | 256000 | 262.144 k | ASYNCHRONOUS | 3-STATE | PARALLEL | 9 mA | 2 V | 45 µA | 3.6 V | 2.4 V | CMOS | INDUSTRIAL | R-PDSO-G44 | Not Qualified | e3 | 3 | 85 °C | -40 °C | 260 | 30 | 44 | PLASTIC/EPOXY | TSOP2 | TSOP44,.46,32 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE | YES | MATTE TIN | GULL WING | 800 µm | DUAL | 1.2 mm | 18.415 mm | 10.16 mm | 2070 | TSOP2 | TSOP2-44 | 44 | compliant | Mainland China, Taiwan | 3A991.B.2.A | 8542.32.00.41 | 4.9 |