Most Relevant | Technical | Compliance | Operating Conditions | Physical | Dimensions | Other | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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制造商型号 | 制造商 | 数据手册 |
价格/库存
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风险等级 | 是否无铅 |
是否Rohs认证
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生命周期 | 内存密度 | 内存宽度 | 组织 |
标称供电电压 (Vsup)
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电源
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最长访问时间 | 最大时钟频率 (fCLK) | 内存集成电路类型 | I/O 类型 | 功能数量 | 端口数量 | 字数代码 | 字数 | 工作模式 | 输出特性 | 可输出 | 并行/串行 |
最大待机电流
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最小待机电流
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最大压摆率
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最大供电电压 (Vsup)
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最小供电电压 (Vsup)
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技术 |
温度等级
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JESD-30 代码 |
认证状态
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JESD-609代码 | 湿度敏感等级 | 最高工作温度 | 最低工作温度 | 峰值回流温度(摄氏度) |
筛选级别
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处于峰值回流温度下的最长时间
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端子数量 | 封装主体材料 | 封装代码 | 封装等效代码 | 封装形状 | 封装形式 |
表面贴装
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端子面层
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端子形式
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端子节距
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端子位置
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座面最大高度
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长度 |
宽度
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零件包装代码
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包装说明
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针数
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是否符合REACH标准
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Country Of Origin
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ECCN代码
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HTS代码
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交付时间
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YTEOL
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Source Content uid
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制造商包装代码
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IS61LV5128AL-10TLI
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Integrated Silicon Solution Inc
|
查询价格和库存 |
|
Yes | Yes | Active | 4.1943 Mbit | 8 | 512KX8 | 3.3 V | 3.3 V | 10 ns | STANDARD SRAM | COMMON | 1 | 512000 | 524.288 k | ASYNCHRONOUS | 3-STATE | PARALLEL | 20 mA | 3.14 V | 95 µA | 3.63 V | 3.135 V | CMOS | INDUSTRIAL | R-PDSO-G44 | Not Qualified | e3 | 3 | 85 °C | -40 °C | 260 | 10 | 44 | PLASTIC/EPOXY | TSOP2 | TSOP44,.46,32 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE | YES | MATTE TIN | GULL WING | 800 µm | DUAL | 1.2 mm | 18.415 mm | 10.16 mm | TSOP2 | LEAD FREE, PLASTIC, TSOP2-44 | 44 | compliant | Mainland China, Taiwan | 3A991.B.2.A | 8542.32.00.41 | [object Object] | 5 | |||||||
IS61LV25616AL-10TL
|
Integrated Silicon Solution Inc
|
查询价格和库存 |
|
Yes | Yes | Active | 4.1943 Mbit | 16 | 256KX16 | 3.3 V | 3.3 V | 10 ns | STANDARD SRAM | COMMON | 1 | 256000 | 262.144 k | ASYNCHRONOUS | 3-STATE | PARALLEL | 10 mA | 2 V | 100 µA | 3.63 V | 3.135 V | CMOS | COMMERCIAL | R-PDSO-G44 | Not Qualified | e3 | 3 | 70 °C | 260 | 30 | 44 | PLASTIC/EPOXY | TSOP2 | TSOP44,.46,32 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE | YES | MATTE TIN | GULL WING | 800 µm | DUAL | 1.2 mm | 18.415 mm | 10.16 mm | TSOP2 | TSOP2, TSOP44,.46,32 | 44 | compliant | Mainland China, Taiwan | 3A991.B.2.A | 8542.32.00.41 | [object Object] | 5 | ||||||||
IS61LV25616AL-10TLI
|
Integrated Silicon Solution Inc
|
查询价格和库存 |
|
Yes | Yes | Active | 4.1943 Mbit | 16 | 256KX16 | 3.3 V | 3.3 V | 10 ns | STANDARD SRAM | COMMON | 1 | 256000 | 262.144 k | ASYNCHRONOUS | 3-STATE | PARALLEL | 15 mA | 2 V | 110 µA | 3.63 V | 3.135 V | CMOS | INDUSTRIAL | R-PDSO-G44 | Not Qualified | e3 | 3 | 85 °C | -40 °C | 260 | 30 | 44 | PLASTIC/EPOXY | TSOP2 | TSOP44,.46,32 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE | YES | MATTE TIN | GULL WING | 800 µm | DUAL | 1.2 mm | 18.415 mm | 10.16 mm | TSOP2 | TSOP2, TSOP44,.46,32 | 44 | compliant | Mainland China, Taiwan | 3A991.B.2.A | 8542.32.00.41 | [object Object] | 5 | |||||||
AS7C34098A-10TCN
|
Alliance Memory Inc
|
查询价格和库存 |
|
Yes | Yes | Active | 4.1943 Mbit | 16 | 256KX16 | 3.3 V | 3.3 V | 10 ns | STANDARD SRAM | COMMON | 1 | 256000 | 262.144 k | ASYNCHRONOUS | 3-STATE | PARALLEL | 8 mA | 3 V | 170 µA | 3.6 V | 3 V | CMOS | COMMERCIAL | R-PDSO-G44 | Not Qualified | e3 | 3 | 70 °C | 44 | PLASTIC/EPOXY | TSOP2 | TSOP44,.46,32 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE | YES | TIN | GULL WING | 800 µm | DUAL | 1.2 mm | 18.415 mm | 10.16 mm | TSOP2 | TSOP2, TSOP44,.46,32 | 44 | compliant | Mainland China | 3A991.B.2.A | 8542.32.00.41 | [object Object] | 5 | ||||||||||
AS7C34098A-10TIN
|
Alliance Memory Inc
|
查询价格和库存 |
|
Yes | Yes | Active | 4.1943 Mbit | 16 | 256KX16 | 3.3 V | 3.3 V | 10 ns | STANDARD SRAM | COMMON | 1 | 256000 | 262.144 k | ASYNCHRONOUS | 3-STATE | PARALLEL | 8 mA | 3 V | 180 µA | 3.6 V | 3 V | CMOS | INDUSTRIAL | R-PDSO-G44 | Not Qualified | e3/e6 | 3 | 85 °C | -40 °C | 44 | PLASTIC/EPOXY | TSOP2 | TSOP44,.46,32 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE | YES | GULL WING | 800 µm | DUAL | 1.2 mm | 18.415 mm | 10.16 mm | TSOP2 | TSOP2, TSOP44,.46,32 | 44 | compliant | Mainland China | 3A991.B.2.A | 8542.32.00.41 | [object Object] | 5 | ||||||||||
IS61LV25616AL-10TLI-TR
|
Integrated Silicon Solution Inc
|
查询价格和库存 |
|
Yes | Yes | Active | 4.1943 Mbit | 16 | 256KX16 | 3.3 V | 3.3 V | 10 ns | STANDARD SRAM | COMMON | 1 | 256000 | 262.144 k | ASYNCHRONOUS | 3-STATE | PARALLEL | 15 mA | 2 V | 100 µA | 3.63 V | 3.135 V | CMOS | INDUSTRIAL | R-PDSO-G44 | Not Qualified | e3 | 3 | 85 °C | -40 °C | 260 | 40 | 44 | PLASTIC/EPOXY | TSOP2 | TSOP44,.46,32 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE | YES | MATTE TIN | GULL WING | 800 µm | DUAL | 1.2 mm | 18.415 mm | 10.16 mm | TSOP2 | TSOP2, TSOP44,.46,32 | 44 | compliant | Mainland China, Taiwan | 3A991.B.2.A | 8542.32.00.41 | [object Object] | 5 | |||||||
IS61C256AL-12JLI-TR
|
Integrated Silicon Solution Inc
|
查询价格和库存 |
|
Yes | Yes | Active | 262.144 kbit | 8 | 32KX8 | 5 V | 12 ns | STANDARD SRAM | 1 | 32000 | 32.768 k | ASYNCHRONOUS | PARALLEL | 5.5 V | 4.5 V | CMOS | INDUSTRIAL | R-PDSO-J28 | Not Qualified | e3 | 3 | 85 °C | -40 °C | 260 | 40 | 28 | PLASTIC/EPOXY | SOJ | RECTANGULAR | SMALL OUTLINE | YES | Matte Tin (Sn) | J BEND | 1.27 mm | DUAL | 3.56 mm | 18.415 mm | 7.62 mm | SOJ | SOJ, | 28 | compliant | Mainland China, Taiwan | EAR99 | 8542.32.00.41 | [object Object] | 4 | ||||||||||||||
IS61C256AL-12JLI
|
Integrated Silicon Solution Inc
|
查询价格和库存 |
|
Yes | Yes | Active | 262.144 kbit | 8 | 32KX8 | 5 V | 5 V | 12 ns | STANDARD SRAM | COMMON | 1 | 32000 | 32.768 k | ASYNCHRONOUS | 3-STATE | PARALLEL | 100 µA | 2 V | 25 µA | 5.5 V | 4.5 V | CMOS | INDUSTRIAL | R-PDSO-J28 | Not Qualified | e3 | 3 | 85 °C | -40 °C | 260 | 40 | 28 | PLASTIC/EPOXY | SOJ | SOJ28,.34 | RECTANGULAR | SMALL OUTLINE | YES | MATTE TIN | J BEND | 1.27 mm | DUAL | 3.56 mm | 18.415 mm | 7.62 mm | SOJ | SOJ, SOJ28,.34 | 28 | compliant | Mainland China, Taiwan | EAR99 | 8542.32.00.41 | [object Object] | 4 | |||||||
M48Z02-150PC1
|
STMicroelectronics
|
查询价格和库存 |
|
Active | 16.384 kbit | 8 | 2KX8 | 5 V | 5 V | STANDARD SRAM | COMMON | 1 | 1 | 2000 | 2.048 k | ASYNCHRONOUS | 3-STATE | YES | PARALLEL | 3 mA | 4.75 V | 80 µA | 5.5 V | 4.75 V | CMOS | COMMERCIAL | R-PDIP-T24 | Not Qualified | e3 | 70 °C | 24 | PLASTIC/EPOXY | DIP | DIP24,.6 | RECTANGULAR | IN-LINE | NO | MATTE TIN | THROUGH-HOLE | 2.54 mm | DUAL | 9.65 mm | 34.545 mm | 15.24 mm | DIP | DIP, DIP24,.6 | 24 | compliant | Malaysia | EAR99 | 8542.32.00.41 | [object Object] | 4 | M48Z02-150PC1 | |||||||||||
IS61LV12816L-10TL
|
Integrated Silicon Solution Inc
|
查询价格和库存 |
|
Yes | Yes | Active | 2.0972 Mbit | 16 | 128KX16 | 3.3 V | 3.3 V | 10 ns | STANDARD SRAM | COMMON | 1 | 128000 | 131.072 k | ASYNCHRONOUS | 3-STATE | PARALLEL | 3 mA | 2 V | 60 µA | 3.63 V | 2.97 V | CMOS | COMMERCIAL | R-PDSO-G44 | Not Qualified | e3 | 70 °C | 260 | 10 | 44 | PLASTIC/EPOXY | TSOP2 | TSOP44,.46,32 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE | YES | MATTE TIN | GULL WING | 800 µm | DUAL | 1.2 mm | 18.415 mm | 10.16 mm | TSOP2 | TSOP2, TSOP44,.46,32 | 44 | compliant | Mainland China, Taiwan | 3A991.B.2.A | 8542.32.00.41 | [object Object] | 5 | |||||||||
IS61C256AL-12TLI
|
Integrated Silicon Solution Inc
|
查询价格和库存 |
|
Yes | Yes | Active | 262.144 kbit | 8 | 32KX8 | 5 V | 5 V | 12 ns | STANDARD SRAM | COMMON | 1 | 32000 | 32.768 k | ASYNCHRONOUS | 3-STATE | PARALLEL | 100 µA | 2 V | 25 µA | 5.5 V | 4.5 V | CMOS | INDUSTRIAL | R-PDSO-G28 | Not Qualified | e3 | 85 °C | -40 °C | 260 | 10 | 28 | PLASTIC/EPOXY | TSOP1 | TSSOP28,.53,22 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE | YES | MATTE TIN | GULL WING | 550 µm | DUAL | 1.2 mm | 11.8 mm | 8 mm | TSOP | TSOP1, TSSOP28,.53,22 | 28 | compliant | Mainland China, Taiwan | EAR99 | 8542.32.00.41 | [object Object] | 4 | ||||||||
SN74LS670N
|
Texas Instruments
|
查询价格和库存 |
|
Yes | Active | 16 bit | 4 | 4X4 | 5 V | 5 V | 45 ns | 35 MHz | STANDARD SRAM | 1 | 1 | 4 | 4 words | ASYNCHRONOUS | 3-STATE | NO | PARALLEL | 50 mA | 5.25 V | 4.75 V | TTL | COMMERCIAL | R-PDIP-T16 | Not Qualified | e4 | 1 | 70 °C | 16 | PLASTIC/EPOXY | DIP | DIP16,.3 | RECTANGULAR | IN-LINE | NO | NICKEL PALLADIUM GOLD | THROUGH-HOLE | 2.54 mm | DUAL | 5.08 mm | 19.3 mm | 6.35 mm | DIP | DIP, DIP16,.3 | 16 | compliant | Malaysia, Mexico | EAR99 | 8542.39.00.01 | 15 | SN74LS670N | |||||||||||
M48Z35Y-70PC1
|
STMicroelectronics
|
查询价格和库存 |
|
Active | 262.144 kbit | 8 | 32KX8 | 5 V | 5 V | 70 ns | SRAM STD | 1 | 1 | 32000 | 32.768 k | ASYNCHRONOUS | 3-STATE | YES | PARALLEL | 3 mA | 50 µA | 5.5 V | 4.5 V | CMOS | COMMERCIAL | R-PDIP-T28 | Not Qualified | e3 | 70 °C | 28 | PLASTIC/EPOXY | DIP | DIP28,.6 | RECTANGULAR | IN-LINE | NO | MATTE TIN | THROUGH-HOLE | 2.54 mm | DUAL | 9.65 mm | 39.625 mm | 15.24 mm | DIP | DIP, DIP28,.6 | 28 | compliant | Malaysia | EAR99 | 8542.32.00.41 | [object Object] | 4 | M48Z35Y-70PC1 | ||||||||||||
N25S830HAS22I
|
onsemi
|
查询价格和库存 |
|
Yes | Active | 262.144 kbit | 8 | 32KX8 | 3 V | 3/3.3 V | 20 MHz | STANDARD SRAM | SEPARATE | 1 | 1, (3 LINE) | 32000 | 32.768 k | SYNCHRONOUS | 3-STATE | SERIAL | 4 µA | 2.7 V | 10 µA | 3.6 V | 2.7 V | CMOS | INDUSTRIAL | R-PDSO-G8 | Not Qualified | e3 | 3 | 85 °C | -40 °C | 260 | 30 | 8 | PLASTIC/EPOXY | SOP | SOP8,.25 | RECTANGULAR | SMALL OUTLINE | YES | MATTE TIN | GULL WING | 1.27 mm | DUAL | 1.75 mm | 4.9 mm | 3.91 mm | SOIC | SOP, SOP8,.25 | 8 | compliant | Thailand | EAR99 | 8542.32.00.41 | [object Object] | 4 | N25S830HAS22I | 751AZ | |||||
IS61LV256AL-10TLI
|
Integrated Silicon Solution Inc
|
查询价格和库存 |
|
Yes | Yes | Active | 262.144 kbit | 8 | 32KX8 | 3.3 V | 3.3 V | 10 ns | STANDARD SRAM | COMMON | 1 | 32000 | 32.768 k | ASYNCHRONOUS | 3-STATE | PARALLEL | 50 µA | 2 V | 25 µA | 3.63 V | 3.135 V | CMOS | INDUSTRIAL | R-PDSO-G28 | Not Qualified | e3 | 85 °C | -40 °C | 260 | 10 | 28 | PLASTIC/EPOXY | TSOP1 | TSSOP28,.53,22 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE | YES | MATTE TIN | GULL WING | 550 µm | DUAL | 1.2 mm | 11.8 mm | 8 mm | TSOP1 | TSOP1, TSSOP28,.53,22 | 28 | compliant | Mainland China, Taiwan | EAR99 | 8542.32.00.41 | [object Object] | 4 | ||||||||
23LC1024T-I/SN
|
Microchip Technology Inc
|
查询价格和库存 |
|
Yes | Active | 1.0486 Mbit | 8 | 128KX8 | 5 V | 3/5 V | 20 MHz | STANDARD SRAM | COMMON/SEPARATE | 1 | 1 | 128000 | 131.072 k | SYNCHRONOUS | 3-STATE | NO | SERIAL | 10 µA | 2.5 V | 10 µA | 5.5 V | 2.5 V | CMOS | INDUSTRIAL | R-PDSO-G8 | Not Qualified | e3 | 1 | 85 °C | -40 °C | 260 | TS 16949 | 40 | 8 | PLASTIC/EPOXY | SOP | SOP8,.23 | RECTANGULAR | SMALL OUTLINE | YES | Matte Tin (Sn) - annealed | GULL WING | 1.27 mm | DUAL | 1.75 mm | 4.9 mm | 3.9 mm | SOIC-8 | compliant | Thailand | EAR99 | 8542.32.00.51 | [object Object] | 4 | 23LC1024T-I/SN | ||||||
23LC1024-I/SN
|
Microchip Technology Inc
|
查询价格和库存 |
|
Yes | Yes | Active | 1.0486 Mbit | 8 | 128KX8 | 5 V | 3/5 V | 20 MHz | STANDARD SRAM | COMMON/SEPARATE | 1 | 1 | 128000 | 131.072 k | SYNCHRONOUS | 3-STATE | NO | SERIAL | 10 µA | 2.5 V | 10 µA | 5.5 V | 2.5 V | CMOS | INDUSTRIAL | R-PDSO-G8 | Not Qualified | e3 | 1 | 85 °C | -40 °C | 260 | TS 16949 | 40 | 8 | PLASTIC/EPOXY | SOP | SOP8,.23 | RECTANGULAR | SMALL OUTLINE | YES | Matte Tin (Sn) - annealed | GULL WING | 1.27 mm | DUAL | 1.75 mm | 4.9 mm | 3.9 mm | SOIC | SOIC-8 | 8 | compliant | Thailand | EAR99 | 8542.32.00.51 | [object Object] | 4 | 23LC1024-I/SN | |||
23K256-E/ST
|
Microchip Technology Inc
|
查询价格和库存 |
|
Yes | Yes | Active | 262.144 kbit | 8 | 32KX8 | 3 V | 3/3.3 V | 16 MHz | STANDARD SRAM | SEPARATE | 1 | 1 | 32000 | 32.768 k | SYNCHRONOUS | 3-STATE | NO | SERIAL | 10 µA | 2.7 V | 10 µA | 3.6 V | 2.7 V | CMOS | AUTOMOTIVE | R-PDSO-G8 | Not Qualified | e3 | 1 | 125 °C | -40 °C | 260 | 40 | 8 | PLASTIC/EPOXY | TSSOP | TSSOP8,.25 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE, SHRINK PITCH | YES | Matte Tin (Sn) - annealed | GULL WING | 650 µm | DUAL | 1.2 mm | 4.4 mm | 3 mm | SOIC | 4.40 MM, PLASTIC, TSSOP-8 | 8 | compliant | Thailand | EAR99 | 8542.32.00.51 | [object Object] | 4 | 23K256-E/ST | ||||
23K256T-I/ST
|
Microchip Technology Inc
|
查询价格和库存 |
|
Yes | Yes | Active | 262.144 kbit | 8 | 32KX8 | 3 V | 3/3.3 V | 20 MHz | STANDARD SRAM | SEPARATE | 1 | 1 | 32000 | 32.768 k | SYNCHRONOUS | 3-STATE | NO | SERIAL | 4 µA | 2.7 V | 10 µA | 3.6 V | 2.7 V | CMOS | INDUSTRIAL | R-PDSO-G8 | Not Qualified | e3 | 1 | 85 °C | -40 °C | 260 | 40 | 8 | PLASTIC/EPOXY | TSSOP | TSSOP8,.25 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE, SHRINK PITCH | YES | Matte Tin (Sn) - annealed | GULL WING | 650 µm | DUAL | 1.2 mm | 4.4 mm | 3 mm | SOIC | 4.40 MM, PLASTIC, TSSOP-8 | 8 | compliant | Thailand | EAR99 | 8542.32.00.51 | [object Object] | 4 | 23K256T-I/ST | ||||
23K256-I/ST
|
Microchip Technology Inc
|
查询价格和库存 |
|
Yes | Yes | Active | 262.144 kbit | 8 | 32KX8 | 3 V | 3/3.3 V | 20 MHz | STANDARD SRAM | SEPARATE | 1 | 1 | 32000 | 32.768 k | SYNCHRONOUS | 3-STATE | NO | SERIAL | 4 µA | 2.7 V | 10 µA | 3.6 V | 2.7 V | CMOS | INDUSTRIAL | R-PDSO-G8 | Not Qualified | e3 | 1 | 85 °C | -40 °C | 260 | 40 | 8 | PLASTIC/EPOXY | TSSOP | TSSOP8,.25 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE, SHRINK PITCH | YES | Matte Tin (Sn) - annealed | GULL WING | 650 µm | DUAL | 1.2 mm | 4.4 mm | 3 mm | SOIC | 4.40 MM, PLASTIC, TSSOP-8 | 8 | compliant | Thailand | EAR99 | 8542.32.00.51 | [object Object] | 4 | 23K256-I/ST |