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功率场效应晶体管:

180,412 个筛选结果
功率场效应晶体管(VF)又称VMOS场效应管。在实际应用中,它有着比晶体管和MOS场效应管更好的特性。
IGBT (25,833)
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配置 (50)
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最小漏源击穿电压 (50)
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最大漏极电流 (Abs) (ID) (50)
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最大漏极电流 (ID) (50)
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最大漏源导通电阻 (50)
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制造商 (50)
元件数量 (9)
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端子数量 (38)
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极性/信道类型 (5)
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Most Relevant Technical Compliance Operating Conditions Physical Other
制造商型号 制造商 数据手册 价格/库存
风险等级 是否无铅 生命周期 极性/信道类型 表面贴装
配置 端子数量 最小漏源击穿电压 元件数量 最大漏极电流 (Abs) (ID) 最大漏极电流 (ID) 最大漏源导通电阻 其他特性 雪崩能效等级(Eas) 最大反馈电容 (Crss) FET 技术 工作模式 最大功率耗散 (Abs) 最大脉冲漏极电流 (IDM) 晶体管应用
晶体管元件材料
JEDEC-95代码 JESD-30 代码 JESD-609代码 认证状态 参考标准
湿度敏感等级 最高工作温度 最低工作温度 峰值回流温度(摄氏度) 处于峰值回流温度下的最长时间
外壳连接 封装主体材料 封装形状 封装形式 端子面层
端子形式
端子位置
零件包装代码
包装说明
针数
是否符合REACH标准
ECCN代码
YTEOL
Source Content uid
制造商包装代码
Country Of Origin
交付时间
Date Of Intro
HTS代码
IRLR120TRPBF
Vishay Siliconix
查询价格和库存
Yes Active N-CHANNEL YES SINGLE WITH BUILT-IN DIODE 2 100 V 1 7.7 A 7.7 A 270 mΩ AVALANCHE RATED 210 mJ METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 42 W 31 A SWITCHING SILICON TO-252 R-PSSO-G2 Not Qualified 150 °C 260 40 DRAIN PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE GULL WING SINGLE TO-252 SMALL OUTLINE, R-PSSO-G2 3 unknown EAR99 5.67
IRLR120TRLPBF
Vishay Siliconix
查询价格和库存
Yes Active N-CHANNEL YES SINGLE WITH BUILT-IN DIODE 2 100 V 1 7.7 A 7.7 A 270 mΩ AVALANCHE RATED 210 mJ METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 42 W 31 A SWITCHING SILICON TO-252 R-PSSO-G2 Not Qualified 150 °C 260 40 DRAIN PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE GULL WING SINGLE TO-252 SMALL OUTLINE, R-PSSO-G2 3 unknown EAR99 5.67
NVMFS5C404NLAFT1G
onsemi
查询价格和库存
Yes Active N-CHANNEL YES SINGLE WITH BUILT-IN DIODE 5 40 V 1 370 A 370 A 1 mΩ 907 mJ 79.8 pF METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 200 W 900 A SILICON R-PDSO-F5 e3 AEC-Q101 1 175 °C -55 °C 260 30 DRAIN PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE MATTE TIN FLAT DUAL SMALL OUTLINE, R-PDSO-F5 not_compliant EAR99 5.67 NVMFS5C404NLAFT1G 506EZ Malaysia [object Object] 2017-02-24
NVMFS5C404NLWFAFT1G
onsemi
查询价格和库存
Yes Active N-CHANNEL YES SINGLE WITH BUILT-IN DIODE 5 40 V 1 370 A 370 A 1 mΩ 907 mJ 79.8 pF METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 200 W 900 A SILICON R-PDSO-F5 e3 AEC-Q101 1 175 °C -55 °C 260 30 DRAIN PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE MATTE TIN FLAT DUAL SMALL OUTLINE, R-PDSO-F5 not_compliant EAR99 5.67 NVMFS5C404NLWFAFT1G 507BE Malaysia [object Object] 2017-02-24
BSP250,115
Nexperia
查询价格和库存
Active P-CHANNEL YES SINGLE WITH BUILT-IN DIODE 4 30 V 1 3 A 400 mΩ METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 12 A SWITCHING SILICON R-PDSO-G4 e3 1 260 30 DRAIN PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE TIN GULL WING DUAL SC-73 SMALL OUTLINE, R-PDSO-G4 4 compliant EAR99 3 BSP250,115 SOT223 Mainland China 2017-02-01
STD20NF06LAG
STMicroelectronics
查询价格和库存
Active NOT SPECIFIED NOT SPECIFIED not_compliant EAR99 STD20NF06LAG [object Object]
NVMFS5C426NLT1G
onsemi
查询价格和库存
Yes Active N-CHANNEL YES SINGLE WITH BUILT-IN DIODE 5 40 V 1 237 A 237 A 1.8 mΩ 453 mJ 70 pF METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 128 W 1.48 kA SILICON R-PDSO-F5 e3 AEC-Q101 1 175 °C -55 °C 260 30 DRAIN PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE MATTE TIN FLAT DUAL SMALL OUTLINE, R-PDSO-F5 not_compliant EAR99 5.67 NVMFS5C426NLT1G 488AA Malaysia [object Object]
FQD13N06LTM
onsemi
查询价格和库存
Yes Active N-CHANNEL YES SINGLE WITH BUILT-IN DIODE 2 60 V 1 11 A 11 A 145 mΩ 90 mJ METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 28 W 44 A SWITCHING SILICON TO-252 R-PSSO-G2 e3 Not Qualified 1 150 °C 260 30 DRAIN PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE MATTE TIN GULL WING SINGLE SMALL OUTLINE, R-PSSO-G2 not_compliant EAR99 5.52 FQD13N06LTM 369AS Mainland China [object Object]
FDB52N20TM
onsemi
查询价格和库存
Yes Active N-CHANNEL YES SINGLE WITH BUILT-IN DIODE 2 200 V 1 52 A 52 A 49 mΩ 2520 mJ METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 357 W 208 A SWITCHING SILICON TO-263 R-PSSO-G2 e3 Not Qualified 1 150 °C -55 °C 245 30 DRAIN PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE MATTE TIN GULL WING SINGLE SMALL OUTLINE, R-PSSO-G2 not_compliant EAR99 6.2 FDB52N20TM 418AJ Mainland China [object Object]
SIHFR1N60A-GE3
Vishay Siliconix
查询价格和库存
Active N-CHANNEL YES SINGLE 1 1.4 A 1.4 A METAL-OXIDE SEMICONDUCTOR 36 W 150 °C , unknown EAR99
HUF75339P3
onsemi
查询价格和库存
Yes Active N-CHANNEL NO SINGLE WITH BUILT-IN DIODE 3 55 V 1 75 A 75 A 12 mΩ METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 200 W SWITCHING SILICON TO-220AB R-PSFM-T3 e3 Not Qualified 175 °C DRAIN PLASTIC/EPOXY RECTANGULAR FLANGE MOUNT MATTE TIN THROUGH-HOLE SINGLE FLANGE MOUNT, R-PSFM-T3 compliant EAR99 5.3 HUF75339P3 340AT Mainland China [object Object]
NVTFS5C673NLTAG
onsemi
查询价格和库存
Yes Active N-CHANNEL YES SINGLE WITH BUILT-IN DIODE 5 60 V 1 13 A 15 mΩ 88 mJ METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 290 A SILICON S-PDSO-F5 e3 AEC-Q101 1 175 °C -55 °C 260 30 DRAIN PLASTIC/EPOXY SQUARE SMALL OUTLINE MATTE TIN FLAT DUAL SMALL OUTLINE, S-PDSO-F5 not_compliant EAR99 5.62 NVTFS5C673NLTAG 511AB Malaysia [object Object]
FQD12N20LTM
onsemi
查询价格和库存
Yes Active N-CHANNEL YES SINGLE WITH BUILT-IN DIODE 2 200 V 1 9 A 9 A 320 mΩ 210 mJ METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 55 W 36 A SWITCHING SILICON TO-252 R-PSSO-G2 e3 Not Qualified 1 150 °C -55 °C 260 30 DRAIN PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE MATTE TIN GULL WING SINGLE SMALL OUTLINE, R-PSSO-G2 not_compliant EAR99 6.12 FQD12N20LTM 369AS Mainland China [object Object]
RFD16N05SM9A
onsemi
查询价格和库存
Yes Active N-CHANNEL YES SINGLE WITH BUILT-IN DIODE 2 50 V 1 16 A 16 A 47 mΩ METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 72 W SWITCHING SILICON TO-252AA R-PSSO-G2 e3 Not Qualified 1 175 °C 260 30 DRAIN PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE MATTE TIN GULL WING SINGLE SMALL OUTLINE, R-PSSO-G2 not_compliant EAR99 5.62 RFD16N05SM9A 369AS Mainland China [object Object]
NVMFS5C468NT1G
onsemi
查询价格和库存
Yes Active N-CHANNEL YES SINGLE WITH BUILT-IN DIODE 6 40 V 1 35 A 35 A 12 mΩ 75 mJ 11 pF METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 28 W 151 A SILICON R-PDSO-F6 e3 AEC-Q101 1 175 °C -55 °C 260 30 DRAIN PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE MATTE TIN FLAT DUAL SMALL OUTLINE, R-PDSO-F5 not_compliant EAR99 5.62 NVMFS5C468NT1G 488AA Malaysia [object Object]
BUK9608-55B,118
Nexperia
查询价格和库存
Active N-CHANNEL YES SINGLE WITH BUILT-IN DIODE 2 55 V 1 75 A 9.3 mΩ LOGIC LEVEL COMPATIBLE 352 mJ METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 439 A SWITCHING SILICON R-PSSO-G2 e3 Not Qualified 1 175 °C 245 30 DRAIN PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE TIN GULL WING SINGLE D2PAK SMALL OUTLINE, R-PSSO-G2 3 not_compliant EAR99 5.67 BUK9608-55B,118 SOT404 Philippines
HUF75344G3
onsemi
查询价格和库存
Yes Active N-CHANNEL NO SINGLE WITH BUILT-IN DIODE 3 55 V 1 75 A 75 A 8 mΩ METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 285 W SWITCHING SILICON TO-247 R-PSFM-T3 e3 Not Qualified 175 °C DRAIN PLASTIC/EPOXY RECTANGULAR FLANGE MOUNT MATTE TIN THROUGH-HOLE SINGLE TO-247, 3 PIN not_compliant EAR99 5.25 HUF75344G3 340CK Mainland China [object Object]
NVMFS5C404NWFAFT1G
onsemi
查询价格和库存
Yes Active N-CHANNEL YES SINGLE WITH BUILT-IN DIODE 5 40 V 1 378 A 378 A 0.7 mΩ 907 mJ 120 pF METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 200 W 900 A SILICON R-PDSO-F5 e3 AEC-Q101 1 175 °C -55 °C 260 30 DRAIN PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE MATTE TIN FLAT DUAL SMALL OUTLINE, R-PDSO-F5 not_compliant EAR99 5.67 NVMFS5C404NWFAFT1G 507BE Malaysia [object Object] 2017-02-23
NTHD3100CT1G
onsemi
查询价格和库存
Yes Active N-CHANNEL AND P-CHANNEL YES SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE 8 20 V 2 3.2 A 2.9 A 80 mΩ METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 1.1 W 12 A SWITCHING SILICON R-XDSO-C8 e3 Not Qualified 1 150 °C 260 30 UNSPECIFIED RECTANGULAR SMALL OUTLINE MATTE TIN C BEND DUAL CASE 1206A-03, CHIPFET-8 8 compliant EAR99 5.38 NTHD3100CT1G 1206A-03 Malaysia [object Object]
NTD2955T4G
onsemi
查询价格和库存
Yes Active P-CHANNEL YES SINGLE WITH BUILT-IN DIODE 2 60 V 1 12 A 12 A 180 mΩ 216 mJ METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 55 W 18 A SWITCHING SILICON R-PSSO-G2 e3 Not Qualified 1 175 °C 260 30 DRAIN PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE MATTE TIN GULL WING SINGLE DPAK-3 3 not_compliant EAR99 5.52 NTD2955T4G 369C Malaysia [object Object] 8541.29.00.75
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