Most Relevant | Technical | Compliance | Operating Conditions | Physical | Other | ||||||||||||||||||||||||||||||||||||||||||||||||
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制造商型号 | 制造商 | 数据手册 |
价格/库存
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风险等级 | 是否无铅 | 生命周期 | 极性/信道类型 |
表面贴装
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配置 | 端子数量 | 最小漏源击穿电压 | 元件数量 | 最大漏极电流 (Abs) (ID) | 最大漏极电流 (ID) | 最大漏源导通电阻 | 其他特性 | 雪崩能效等级(Eas) | 最大反馈电容 (Crss) | FET 技术 | 工作模式 | 最大功率耗散 (Abs) | 最大脉冲漏极电流 (IDM) |
晶体管应用
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晶体管元件材料
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JEDEC-95代码 | JESD-30 代码 | JESD-609代码 | 认证状态 |
参考标准
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湿度敏感等级 | 最高工作温度 | 最低工作温度 | 峰值回流温度(摄氏度) |
处于峰值回流温度下的最长时间
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外壳连接 | 封装主体材料 | 封装形状 | 封装形式 |
端子面层
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端子形式
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端子位置
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零件包装代码
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包装说明
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针数
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是否符合REACH标准
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ECCN代码
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YTEOL
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Source Content uid
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制造商包装代码
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Country Of Origin
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交付时间
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Date Of Intro
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HTS代码
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IRLR120TRPBF
|
Vishay Siliconix
|
查询价格和库存 |
|
Yes | Active | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 2 | 100 V | 1 | 7.7 A | 7.7 A | 270 mΩ | AVALANCHE RATED | 210 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 42 W | 31 A | SWITCHING | SILICON | TO-252 | R-PSSO-G2 | Not Qualified | 150 °C | 260 | 40 | DRAIN | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | GULL WING | SINGLE | TO-252 | SMALL OUTLINE, R-PSSO-G2 | 3 | unknown | EAR99 | 5.62 | |||||||||||||
IRLR120TRLPBF
|
Vishay Siliconix
|
查询价格和库存 |
|
Yes | Active | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 2 | 100 V | 1 | 7.7 A | 7.7 A | 270 mΩ | AVALANCHE RATED | 210 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 42 W | 31 A | SWITCHING | SILICON | TO-252 | R-PSSO-G2 | Not Qualified | 150 °C | 260 | 40 | DRAIN | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | GULL WING | SINGLE | TO-252 | SMALL OUTLINE, R-PSSO-G2 | 3 | unknown | EAR99 | 5.62 | |||||||||||||
NVMFS5C404NLAFT1G
|
onsemi
|
查询价格和库存 |
|
Yes | Active | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 5 | 40 V | 1 | 370 A | 370 A | 1 mΩ | 907 mJ | 79.8 pF | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 200 W | 900 A | SILICON | R-PDSO-F5 | e3 | AEC-Q101 | 1 | 175 °C | -55 °C | 260 | 30 | DRAIN | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | MATTE TIN | FLAT | DUAL | SMALL OUTLINE, R-PDSO-F5 | not_compliant | EAR99 | 5.62 | NVMFS5C404NLAFT1G | 506EZ | Malaysia | [object Object] | 2017-02-24 | ||||||||
NVMFS5C404NLWFAFT1G
|
onsemi
|
查询价格和库存 |
|
Yes | Active | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 5 | 40 V | 1 | 370 A | 370 A | 1 mΩ | 907 mJ | 79.8 pF | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 200 W | 900 A | SILICON | R-PDSO-F5 | e3 | AEC-Q101 | 1 | 175 °C | -55 °C | 260 | 30 | DRAIN | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | MATTE TIN | FLAT | DUAL | SMALL OUTLINE, R-PDSO-F5 | not_compliant | EAR99 | 5.62 | NVMFS5C404NLWFAFT1G | 507BE | Malaysia | [object Object] | 2017-02-24 | ||||||||
BSP250,115
|
Nexperia
|
查询价格和库存 |
|
Active | P-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 4 | 30 V | 1 | 3 A | 400 mΩ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 12 A | SWITCHING | SILICON | R-PDSO-G4 | e3 | 1 | 260 | 30 | DRAIN | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | TIN | GULL WING | DUAL | SC-73 | SMALL OUTLINE, R-PDSO-G4 | 4 | compliant | EAR99 | 3 | BSP250,115 | SOT223 | Mainland China | 2017-02-01 | ||||||||||||||
STD20NF06LAG
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STMicroelectronics
|
查询价格和库存 |
|
Active | NOT SPECIFIED | NOT SPECIFIED | not_compliant | EAR99 | STD20NF06LAG | [object Object] | |||||||||||||||||||||||||||||||||||||||||||
NVMFS5C426NLT1G
|
onsemi
|
查询价格和库存 |
|
Yes | Active | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 5 | 40 V | 1 | 237 A | 237 A | 1.8 mΩ | 453 mJ | 70 pF | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 128 W | 1.48 kA | SILICON | R-PDSO-F5 | e3 | AEC-Q101 | 1 | 175 °C | -55 °C | 260 | 30 | DRAIN | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | Matte Tin (Sn) - annealed | FLAT | DUAL | SMALL OUTLINE, R-PDSO-F5 | not_compliant | EAR99 | 5.62 | NVMFS5C426NLT1G | 488AA | Malaysia | [object Object] | |||||||||
FQD13N06LTM
|
onsemi
|
查询价格和库存 |
|
Yes | Active | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 2 | 60 V | 1 | 11 A | 11 A | 145 mΩ | 90 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 28 W | 44 A | SWITCHING | SILICON | TO-252 | R-PSSO-G2 | e3 | Not Qualified | 1 | 150 °C | 260 | 30 | DRAIN | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | Matte Tin (Sn) - annealed | GULL WING | SINGLE | SMALL OUTLINE, R-PSSO-G2 | not_compliant | EAR99 | 5.47 | FQD13N06LTM | 369AS | Mainland China | [object Object] | |||||||||
FDB52N20TM
|
onsemi
|
查询价格和库存 |
|
Yes | Active | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 2 | 200 V | 1 | 52 A | 52 A | 49 mΩ | 2520 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 357 W | 208 A | SWITCHING | SILICON | TO-263 | R-PSSO-G2 | e3 | Not Qualified | 1 | 150 °C | -55 °C | 245 | 30 | DRAIN | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | MATTE TIN | GULL WING | SINGLE | SMALL OUTLINE, R-PSSO-G2 | not_compliant | EAR99 | 6.15 | FDB52N20TM | 418AJ | Mainland China | [object Object] | ||||||||
SIHFR1N60A-GE3
|
Vishay Siliconix
|
查询价格和库存 |
|
Active | N-CHANNEL | YES | SINGLE | 1 | 1.4 A | 1.4 A | METAL-OXIDE SEMICONDUCTOR | 36 W | 150 °C | , | unknown | EAR99 | |||||||||||||||||||||||||||||||||||||
HUF75339P3
|
onsemi
|
查询价格和库存 |
|
Yes | Active | N-CHANNEL | NO | SINGLE WITH BUILT-IN DIODE | 3 | 55 V | 1 | 75 A | 75 A | 12 mΩ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 200 W | SWITCHING | SILICON | TO-220AB | R-PSFM-T3 | e3 | Not Qualified | 175 °C | NOT SPECIFIED | NOT SPECIFIED | DRAIN | PLASTIC/EPOXY | RECTANGULAR | FLANGE MOUNT | Matte Tin (Sn) - annealed | THROUGH-HOLE | SINGLE | FLANGE MOUNT, R-PSFM-T3 | compliant | EAR99 | 5.25 | HUF75339P3 | 340AT | Mainland China | [object Object] | ||||||||||||
NVTFS5C673NLTAG
|
onsemi
|
查询价格和库存 |
|
Yes | Active | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 5 | 60 V | 1 | 13 A | 15 mΩ | 88 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 290 A | SILICON | S-PDSO-F5 | e3 | AEC-Q101 | 1 | 175 °C | -55 °C | 260 | 30 | DRAIN | PLASTIC/EPOXY | SQUARE | SMALL OUTLINE | Matte Tin (Sn) - annealed | FLAT | DUAL | SMALL OUTLINE, S-PDSO-F5 | not_compliant | EAR99 | 5.57 | NVTFS5C673NLTAG | 511AB | Malaysia | [object Object] | ||||||||||||
FQD12N20LTM
|
onsemi
|
查询价格和库存 |
|
Yes | Active | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 2 | 200 V | 1 | 9 A | 9 A | 320 mΩ | 210 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 55 W | 36 A | SWITCHING | SILICON | TO-252 | R-PSSO-G2 | e3 | Not Qualified | 1 | 150 °C | -55 °C | 260 | 30 | DRAIN | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | MATTE TIN | GULL WING | SINGLE | SMALL OUTLINE, R-PSSO-G2 | not_compliant | EAR99 | 6.07 | FQD12N20LTM | 369AS | Mainland China | [object Object] | ||||||||
NVMFS5C468NT1G
|
onsemi
|
查询价格和库存 |
|
Yes | Active | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 6 | 40 V | 1 | 35 A | 35 A | 12 mΩ | 75 mJ | 11 pF | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 28 W | 151 A | SILICON | R-PDSO-F6 | e3 | AEC-Q101 | 1 | 175 °C | -55 °C | 260 | 30 | DRAIN | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | Matte Tin (Sn) - annealed | FLAT | DUAL | SMALL OUTLINE, R-PDSO-F5 | not_compliant | EAR99 | 5.57 | NVMFS5C468NT1G | 488AA | Malaysia | [object Object] | |||||||||
RFD16N05SM9A
|
onsemi
|
查询价格和库存 |
|
Yes | Active | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 2 | 50 V | 1 | 16 A | 16 A | 47 mΩ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 72 W | SWITCHING | SILICON | TO-252AA | R-PSSO-G2 | e3 | Not Qualified | 1 | 175 °C | 260 | 30 | DRAIN | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | Matte Tin (Sn) - annealed | GULL WING | SINGLE | SMALL OUTLINE, R-PSSO-G2 | not_compliant | EAR99 | 5.57 | RFD16N05SM9A | 369AS | Mainland China | [object Object] | |||||||||||
BUK9608-55B,118
|
Nexperia
|
查询价格和库存 |
|
Active | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 2 | 55 V | 1 | 75 A | 9.3 mΩ | LOGIC LEVEL COMPATIBLE | 352 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 439 A | SWITCHING | SILICON | R-PSSO-G2 | e3 | Not Qualified | AEC-Q101 | 1 | 175 °C | 245 | 30 | DRAIN | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | TIN | GULL WING | SINGLE | D2PAK | SMALL OUTLINE, R-PSSO-G2 | 3 | not_compliant | EAR99 | 5.62 | BUK9608-55B,118 | SOT404 | Philippines | ||||||||||
NVMFS5C404NWFAFT1G
|
onsemi
|
查询价格和库存 |
|
Yes | Active | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 5 | 40 V | 1 | 378 A | 378 A | 0.7 mΩ | 907 mJ | 120 pF | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 200 W | 900 A | SILICON | R-PDSO-F5 | e3 | AEC-Q101 | 1 | 175 °C | -55 °C | 260 | 30 | DRAIN | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | Matte Tin (Sn) - annealed | FLAT | DUAL | SMALL OUTLINE, R-PDSO-F5 | not_compliant | EAR99 | 5.62 | NVMFS5C404NWFAFT1G | 507BE | Malaysia | [object Object] | 2017-02-23 | ||||||||
HUF75344G3
|
onsemi
|
查询价格和库存 |
|
Yes | Active | N-CHANNEL | NO | SINGLE WITH BUILT-IN DIODE | 3 | 55 V | 1 | 75 A | 75 A | 8 mΩ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 285 W | SWITCHING | SILICON | TO-247 | R-PSFM-T3 | e3 | Not Qualified | 175 °C | NOT SPECIFIED | NOT SPECIFIED | DRAIN | PLASTIC/EPOXY | RECTANGULAR | FLANGE MOUNT | Matte Tin (Sn) - annealed | THROUGH-HOLE | SINGLE | TO-247, 3 PIN | not_compliant | EAR99 | 5.2 | HUF75344G3 | 340CK | Mainland China | [object Object] | ||||||||||||
NTHD3100CT1G
|
onsemi
|
查询价格和库存 |
|
Yes | Active | N-CHANNEL AND P-CHANNEL | YES | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | 8 | 20 V | 2 | 3.2 A | 2.9 A | 80 mΩ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 1.1 W | 12 A | SWITCHING | SILICON | R-XDSO-C8 | e3 | Not Qualified | 1 | 150 °C | 260 | 30 | UNSPECIFIED | RECTANGULAR | SMALL OUTLINE | MATTE TIN | C BEND | DUAL | ChipFET | CASE 1206A-03, CHIPFET-8 | 8 | compliant | EAR99 | 5.33 | NTHD3100CT1G | 1206A-03 | Malaysia | [object Object] | ||||||||||
NTD2955T4G
|
onsemi
|
查询价格和库存 |
|
Yes | Active | P-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 2 | 60 V | 1 | 12 A | 12 A | 180 mΩ | 216 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 55 W | 18 A | SWITCHING | SILICON | R-PSSO-G2 | e3 | Not Qualified | 1 | 175 °C | 260 | 30 | DRAIN | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | MATTE TIN | GULL WING | SINGLE | DPAK (SINGLE GAUGE) TO-252 | DPAK-3 | 3 | not_compliant | EAR99 | 5.52 | NTD2955T4G | 369C | Mainland China, Malaysia, Vietnam | [object Object] | 8541.29.00.75 |