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功率场效应晶体管: 185,027 个筛选结果
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配置 (50)
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最小漏源击穿电压 (50)
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最大漏极电流 (Abs) (ID) (50)
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最大漏极电流 (ID) (50)
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最大漏源导通电阻 (50)
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制造商 (50)
元件数量 (9)
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端子数量 (38)
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极性/信道类型 (4)
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Most Relevant Technical Compliance Operating Conditions Physical Other
制造商型号 Composite Price
风险等级 是否无铅 生命周期 极性/信道类型 表面贴装
配置 端子数量 最小漏源击穿电压 元件数量 最大漏极电流 (Abs) (ID) 最大漏极电流 (ID) 最大漏源导通电阻 其他特性 雪崩能效等级(Eas) 最大反馈电容 (Crss) FET 技术 工作模式 最大功率耗散 (Abs) 最大脉冲漏极电流 (IDM) 晶体管应用
晶体管元件材料
JEDEC-95代码 JESD-30 代码 JESD-609代码 认证状态 参考标准
湿度敏感等级 最高工作温度 最低工作温度 峰值回流温度(摄氏度) 处于峰值回流温度下的最长时间
外壳连接 封装主体材料 封装形状 封装形式 端子面层
端子形式
端子位置
Source Content uid
包装说明
制造商包装代码
是否符合REACH标准
ECCN代码
交付时间
Date Of Intro
零件包装代码
针数
Samacsys Manufacturer
HTS代码
NVMFS5C404NLWFAFT1G
onsemi
查询价格
Yes Active N-CHANNEL YES SINGLE WITH BUILT-IN DIODE 5 40 V 1 370 A 370 A 1 mΩ 907 mJ 79.8 pF METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 200 W 900 A SILICON R-PDSO-F5 e3 AEC-Q101 1 175 °C -55 °C 260 10 DRAIN PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE Tin (Sn) FLAT DUAL NVMFS5C404NLWFAFT1G SMALL OUTLINE, R-PDSO-F5 507BE not_compliant EAR99 5 weeks 2017-02-24
IRLR120TRPBF
Vishay Siliconix
查询价格
Yes Active N-CHANNEL YES SINGLE WITH BUILT-IN DIODE 2 100 V 1 7.7 A 7.7 A 270 mΩ AVALANCHE RATED 210 mJ METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 42 W 31 A SWITCHING SILICON TO-252 R-PSSO-G2 Not Qualified 150 °C 260 40 DRAIN PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE GULL WING SINGLE SMALL OUTLINE, R-PSSO-G2 unknown EAR99 TO-252 3
HUF75339P3
onsemi
查询价格
Yes Active N-CHANNEL NO SINGLE WITH BUILT-IN DIODE 3 55 V 1 75 A 75 A 12 mΩ METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 200 W SWITCHING SILICON TO-220AB R-PSFM-T3 e3 Not Qualified 175 °C NOT SPECIFIED NOT SPECIFIED DRAIN PLASTIC/EPOXY RECTANGULAR FLANGE MOUNT Tin (Sn) THROUGH-HOLE SINGLE HUF75339P3 FLANGE MOUNT, R-PSFM-T3 340AT compliant EAR99 9 weeks
NVMFS5C404NLAFT1G
onsemi
查询价格
Yes Active N-CHANNEL YES SINGLE WITH BUILT-IN DIODE 5 40 V 1 370 A 370 A 1 mΩ 907 mJ 79.8 pF METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 200 W 900 A SILICON R-PDSO-F5 e3 AEC-Q101 1 175 °C -55 °C 260 10 DRAIN PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE Tin (Sn) FLAT DUAL NVMFS5C404NLAFT1G SMALL OUTLINE, R-PDSO-F5 488AA not_compliant EAR99 5 weeks 2017-02-24
IRLR120TRLPBF
Vishay Siliconix
查询价格
Yes Active N-CHANNEL YES SINGLE WITH BUILT-IN DIODE 2 100 V 1 7.7 A 7.7 A 270 mΩ AVALANCHE RATED 210 mJ METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 42 W 31 A SWITCHING SILICON TO-252 R-PSSO-G2 Not Qualified 150 °C 260 40 DRAIN PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE GULL WING SINGLE SMALL OUTLINE, R-PSSO-G2 unknown EAR99 TO-252 3
BUK7608-55A,118
Nexperia
查询价格
Active N-CHANNEL YES SINGLE WITH BUILT-IN DIODE 2 55 V 1 75 A 8 mΩ 670 mJ METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 504 A SWITCHING SILICON R-PSSO-G2 e3 Not Qualified 1 175 °C 260 40 DRAIN PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE Tin (Sn) GULL WING SINGLE BUK7608-55A,118 SMALL OUTLINE, R-PSSO-G2 SOT404 not_compliant EAR99 D2PAK 3
BSP250,115
Nexperia
查询价格
Active P-CHANNEL YES SINGLE WITH BUILT-IN DIODE 4 30 V 1 3 A 400 mΩ METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 12 A SWITCHING SILICON R-PDSO-G4 e3 1 DRAIN PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE Tin (Sn) GULL WING DUAL BSP250,115 SMALL OUTLINE, R-PDSO-G4 SOT223 compliant EAR99 2017-02-01 SC-73 4 Nexperia
NVMFS5C426NLT1G
onsemi
查询价格
Yes Active N-CHANNEL YES SINGLE WITH BUILT-IN DIODE 5 40 V 1 237 A 237 A 1.8 mΩ 453 mJ 70 pF METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 128 W 1.48 kA SILICON R-PDSO-F5 e3 AEC-Q101 175 °C -55 °C NOT SPECIFIED NOT SPECIFIED DRAIN PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE Tin (Sn) FLAT DUAL NVMFS5C426NLT1G SMALL OUTLINE, R-PDSO-F5 488AA not_compliant EAR99 5 weeks
RFD14N05L
onsemi
查询价格
Yes Active N-CHANNEL NO SINGLE WITH BUILT-IN DIODE 3 50 V 1 14 A 14 A 100 mΩ METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 48 W SWITCHING SILICON TO-251AA R-PSIP-T3 e3 Not Qualified 175 °C NOT SPECIFIED NOT SPECIFIED DRAIN PLASTIC/EPOXY RECTANGULAR IN-LINE Tin (Sn) THROUGH-HOLE SINGLE RFD14N05L IN-LINE, R-PSIP-T3 369AR not_compliant EAR99 1 week
FDB52N20TM
onsemi
查询价格
Yes Active N-CHANNEL YES SINGLE WITH BUILT-IN DIODE 2 200 V 1 52 A 52 A 49 mΩ 2520 mJ METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 357 W 208 A SWITCHING SILICON TO-263 R-PSSO-G2 e3 Not Qualified 1 150 °C -55 °C NOT SPECIFIED NOT SPECIFIED DRAIN PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE Tin (Sn) GULL WING SINGLE FDB52N20TM SMALL OUTLINE, R-PSSO-G2 418AJ not_compliant EAR99 8 weeks
SIHFR1N60A-GE3
Vishay Siliconix
查询价格
Active N-CHANNEL YES Single 1.4 A METAL-OXIDE SEMICONDUCTOR 36 W 150 °C , unknown EAR99
BUK9608-55A,118
Nexperia
查询价格
Active N-CHANNEL YES SINGLE WITH BUILT-IN DIODE 2 55 V 1 75 A 8.5 mΩ 670 mJ METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 503 A SWITCHING SILICON R-PSSO-G2 e3 Not Qualified 1 175 °C 260 40 DRAIN PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE Tin (Sn) GULL WING SINGLE BUK9608-55A,118 SMALL OUTLINE, R-PSSO-G2 SOT404 not_compliant EAR99 D2PAK 3 Nexperia
BUK9608-55B,118
Nexperia
查询价格
Active N-CHANNEL YES SINGLE WITH BUILT-IN DIODE 2 55 V 1 75 A 9.3 mΩ LOGIC LEVEL COMPATIBLE 352 mJ METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 439 A SWITCHING SILICON R-PSSO-G2 e3 Not Qualified 1 175 °C NOT SPECIFIED NOT SPECIFIED DRAIN PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE Tin (Sn) GULL WING SINGLE BUK9608-55B,118 SMALL OUTLINE, R-PSSO-G2 SOT404 not_compliant EAR99 D2PAK 3
STB60NF06LT4
STMicroelectronics
查询价格
Active N-CHANNEL YES SINGLE WITH BUILT-IN DIODE 2 60 V 1 60 A 60 A 16 mΩ LOW THRESHOLD, AVALANCHE RATED 320 mJ METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 150 W 240 A SWITCHING SILICON TO-263AB R-PSSO-G2 e3 Not Qualified 1 175 °C 245 30 DRAIN PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE Matte Tin (Sn) - annealed GULL WING SINGLE STB60NF06LT4 SMALL OUTLINE, R-PSSO-G2 not_compliant EAR99 12 weeks D2PAK 3 STMicroelectronics
BSP250,135
Nexperia
查询价格
Active P-CHANNEL YES SINGLE WITH BUILT-IN DIODE 4 30 V 1 3 A 400 mΩ METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 12 A SWITCHING SILICON R-PDSO-G4 e3 1 260 30 DRAIN PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE Tin (Sn) GULL WING DUAL BSP250,135 SMALL OUTLINE, R-PDSO-G4 SOT223 compliant EAR99 2017-02-01 SC-73 4
FQD5N20LTM
onsemi
查询价格
Yes Active N-CHANNEL YES SINGLE WITH BUILT-IN DIODE 2 200 V 1 3.8 A 3.8 A 1.25 Ω 60 mJ METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 37 W 15.2 A SWITCHING SILICON TO-252 R-PSSO-G2 e3 Not Qualified 1 150 °C NOT SPECIFIED NOT SPECIFIED DRAIN PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE Tin (Sn) GULL WING SINGLE FQD5N20LTM SMALL OUTLINE, R-PSSO-G2 369AS not_compliant EAR99 1 week
NVMFS5C468NT1G
onsemi
查询价格
Yes Active N-CHANNEL YES SINGLE WITH BUILT-IN DIODE 5 40 V 1 35 A 35 A 12 mΩ 75 mJ 11 pF METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 28 W 151 A SILICON R-PDSO-F5 e3 AEC-Q101 175 °C -55 °C NOT SPECIFIED NOT SPECIFIED DRAIN PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE Tin (Sn) FLAT DUAL NVMFS5C468NT1G SMALL OUTLINE, R-PDSO-F5 488AA not_compliant EAR99 1 week
PHB21N06LT,118
Nexperia
查询价格
Active N-CHANNEL YES SINGLE WITH BUILT-IN DIODE 2 55 V 1 19 A 75 mΩ LOGIC LEVEL COMPATIBLE 34 mJ METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 76 A SWITCHING SILICON R-PSSO-G2 e3 1 DRAIN PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE Tin (Sn) GULL WING SINGLE PHB21N06LT,118 SMALL OUTLINE, R-PSSO-G2 SOT404 not_compliant EAR99 1997-09-01 D2PAK 3 Nexperia 8541.29.00.75
STB57N65M5
STMicroelectronics
查询价格
Active N-CHANNEL NO SINGLE WITH BUILT-IN DIODE 3 650 V 1 42 A 63 mΩ 960 mJ METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 168 A SWITCHING SILICON TO-220AB R-PSFM-T3 e3 1 150 °C 245 30 DRAIN PLASTIC/EPOXY RECTANGULAR FLANGE MOUNT Matte Tin (Sn) - annealed THROUGH-HOLE SINGLE STB57N65M5 ROHS COMPLIANT, TO-220, 3 PIN not_compliant EAR99 17 weeks STMicroelectronics
FQD13N06LTM
onsemi
查询价格
Yes Active N-CHANNEL YES SINGLE WITH BUILT-IN DIODE 2 60 V 1 11 A 11 A 145 mΩ 90 mJ METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 28 W 44 A SWITCHING SILICON TO-252 R-PSSO-G2 e3 Not Qualified 1 150 °C NOT SPECIFIED NOT SPECIFIED DRAIN PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE Tin (Sn) GULL WING SINGLE FQD13N06LTM SMALL OUTLINE, R-PSSO-G2 369AS not_compliant EAR99 1 week
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