型号 | Most Relevant | Technical | Compliance | Operating Conditions | Physical | Other | ||||||||||||||||||||||||||||||||||||||||||||||||
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数据手册 |
单价/库存
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风险等级 | 是否无铅 |
是否Rohs认证
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生命周期 | 极性/信道类型 |
表面贴装
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配置 | 端子数量 | 最小漏源击穿电压 | 元件数量 | 最大漏极电流 (ID) | 最大漏源导通电阻 | 其他特性 | 雪崩能效等级(Eas) | 最大反馈电容 (Crss) | FET 技术 | 工作模式 | 功耗环境最大值 | 最大功率耗散 (Abs) | 最大脉冲漏极电流 (IDM) |
晶体管应用
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晶体管元件材料
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最大关闭时间(toff)
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最大开启时间(吨)
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JEDEC-95代码 | JESD-30 代码 | JESD-609代码 | 认证状态 |
参考标准
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湿度敏感等级 | 最高工作温度 | 最低工作温度 | 峰值回流温度(摄氏度) |
处于峰值回流温度下的最长时间
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外壳连接 | 封装主体材料 | 封装形状 | 封装形式 |
端子面层
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端子形式
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端子位置
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Source Content uid
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mfrid
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零件包装代码
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包装说明
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针数
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制造商包装代码
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是否符合REACH标准
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Country Of Origin
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ECCN代码
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YTEOL
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PSMN1R7-60BS,118
Nexperia
|
查询价格和库存 |
|
Active | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 2 | 60 V | 1 | 120 A | 2 mΩ | 913 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 1.076 kA | SWITCHING | SILICON | R-PSSO-G2 | e3 | 1 | 245 | 30 | DRAIN | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | TIN | GULL WING | SINGLE | PSMN1R7-60BS,118 | 229119436 | D2PAK | SMALL OUTLINE, R-PSSO-G2 | 3 | SOT404 | not_compliant | Philippines | EAR99 | 5.6 | |||||||||||||||
IRFR9024NTRPBF
Infineon Technologies AG
|
查询价格和库存 |
|
Yes | Active | P-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 2 | 55 V | 1 | 11 A | 175 mΩ | AVALANCHE RATED, HIGH RELIABILITY | 62 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 38 W | 44 A | SWITCHING | SILICON | TO-252AA | R-PSSO-G2 | e3 | Not Qualified | 1 | 150 °C | -55 °C | 260 | 30 | DRAIN | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | Matte Tin (Sn) - with Nickel (Ni) barrier | GULL WING | SINGLE | IRFR9024NTRPBF | 2065 | not_compliant | Mainland China, USA | EAR99 | 5.4 | ||||||||||||
BUK9608-55B,118
Nexperia
|
查询价格和库存 |
|
Active | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 2 | 55 V | 1 | 75 A | 9.3 mΩ | LOGIC LEVEL COMPATIBLE | 352 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 439 A | SWITCHING | SILICON | R-PSSO-G2 | e3 | Not Qualified | AEC-Q101 | 1 | 175 °C | 245 | 30 | DRAIN | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | TIN | GULL WING | SINGLE | BUK9608-55B,118 | 229119436 | D2PAK | SMALL OUTLINE, R-PSSO-G2 | 3 | SOT404 | not_compliant | Philippines | EAR99 | 0 | |||||||||||
BUK9Y43-60E,115
Nexperia
|
查询价格和库存 |
|
Active | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 4 | 60 V | 1 | 22 A | 43 mΩ | AVALANCHE RATED | 12.4 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 86 A | SWITCHING | SILICON | MO-235 | R-PSSO-G4 | e3 | AEC-Q101; IEC-60134 | 1 | 260 | 30 | DRAIN | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | TIN | GULL WING | SINGLE | BUK9Y43-60E,115 | 229119436 | SOIC | SMALL OUTLINE, R-PSSO-G4 | 4 | SOT669 | not_compliant | Philippines | EAR99 | 5.55 | ||||||||||||
FDD4141
onsemi
|
查询价格和库存 |
|
Yes | Active | P-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 2 | 40 V | 1 | 50 A | 12.3 mΩ | 337 mJ | 310 pF | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 69 W | 100 A | SWITCHING | SILICON | 87 ns | 32 ns | TO-252AA | R-PSSO-G2 | e3 | Not Qualified | 1 | 150 °C | -55 °C | 260 | 30 | DRAIN | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | Matte Tin (Sn) - annealed | GULL WING | SINGLE | FDD4141 | 2260 | TO-252, DPAK-3/2 | 369AS | not_compliant | Mainland China | EAR99 | 5.55 | ||||||||
IRFZ34NPBF
Infineon Technologies AG
|
查询价格和库存 |
|
Yes | Active | N-CHANNEL | NO | SINGLE WITH BUILT-IN DIODE | 3 | 55 V | 1 | 29 A | 40 mΩ | 65 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 68 W | 100 A | SWITCHING | SILICON | TO-220AB | R-PSFM-T3 | Not Qualified | 175 °C | NOT SPECIFIED | NOT SPECIFIED | DRAIN | PLASTIC/EPOXY | RECTANGULAR | FLANGE MOUNT | THROUGH-HOLE | SINGLE | IRFZ34NPBF | 2065 | compliant | EAR99 | 5.15 | ||||||||||||||||||
IRFZ44NSTRLPBF
Infineon Technologies AG
|
查询价格和库存 |
|
Yes | Active | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 2 | 55 V | 1 | 49 A | 17.5 mΩ | AVALANCHE RATED, HIGH RELIABILITY | 150 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 94 W | 160 A | SWITCHING | SILICON | R-PSSO-G2 | e3 | Not Qualified | 1 | 175 °C | 260 | 30 | DRAIN | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | Matte Tin (Sn) - with Nickel (Ni) barrier | GULL WING | SINGLE | IRFZ44NSTRLPBF | 2065 | not_compliant | EAR99 | 5.55 | |||||||||||||||
IRF9540NSTRLPBF
Infineon Technologies AG
|
查询价格和库存 |
|
Yes | Active | P-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 2 | 100 V | 1 | 23 A | 117 mΩ | AVALANCHE RATED, HIGH RELIABILITY | 84 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 140 W | 92 A | SWITCHING | SILICON | TO-263AB | R-PSSO-G2 | e3 | Not Qualified | 1 | 175 °C | -55 °C | 260 | 30 | DRAIN | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | Matte Tin (Sn) - with Nickel (Ni) barrier | GULL WING | SINGLE | IRF9540NSTRLPBF | 2065 | SMALL OUTLINE, R-PSSO-G2 | not_compliant | EAR99 | 5.6 | ||||||||||||
IRFR024NTRPBF
Infineon Technologies AG
|
查询价格和库存 |
|
Yes | Active | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 2 | 55 V | 1 | 17 A | 75 mΩ | AVALANCHE RATED, ULTRA-LOW RESISTANCE | 71 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 45 W | 68 A | SWITCHING | SILICON | TO-252AA | R-PSSO-G2 | e3 | Not Qualified | 1 | 175 °C | 260 | 30 | DRAIN | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | Matte Tin (Sn) - with Nickel (Ni) barrier | GULL WING | SINGLE | IRFR024NTRPBF | 2065 | not_compliant | EAR99 | 5.4 | ||||||||||||||
IRLR3410TRPBF
Infineon Technologies AG
|
查询价格和库存 |
|
Yes | Active | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 2 | 100 V | 1 | 17 A | 125 mΩ | AVALANCHE RATED, ULTRA-LOW RESISTANCE | 150 mJ | 90 pF | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 79 W | 60 A | SWITCHING | SILICON | TO-252AA | R-PSSO-G2 | e3 | Not Qualified | 1 | 175 °C | -55 °C | 260 | 30 | DRAIN | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | Matte Tin (Sn) - with Nickel (Ni) barrier | GULL WING | SINGLE | IRLR3410TRPBF | 2065 | not_compliant | EAR99 | 5.6 | ||||||||||||
IRFR5505TRPBF
Infineon Technologies AG
|
查询价格和库存 |
|
Yes | Active | P-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 2 | 55 V | 1 | 18 A | 110 mΩ | AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE | 150 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 57 W | 64 A | SWITCHING | SILICON | TO-252AA | R-PSSO-G2 | e3 | Not Qualified | 1 | 150 °C | -55 °C | 260 | 30 | DRAIN | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | Matte Tin (Sn) - with Nickel (Ni) barrier | GULL WING | SINGLE | IRFR5505TRPBF | 2065 | not_compliant | EAR99 | 5.4 | |||||||||||||
IRF530NSTRLPBF
Infineon Technologies AG
|
查询价格和库存 |
|
Yes | Active | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 2 | 100 V | 1 | 17 A | 90 mΩ | AVALANCHE RATED, HIGH RELIABILITY | 93 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 3.8 W | 60 A | SWITCHING | SILICON | R-PSSO-G2 | e3 | Not Qualified | 1 | 260 | 30 | DRAIN | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | Matte Tin (Sn) - with Nickel (Ni) barrier | GULL WING | SINGLE | IRF530NSTRLPBF | 2065 | not_compliant | Mainland China | EAR99 | 6 | |||||||||||||||
IRF4905STRLPBF
Infineon Technologies AG
|
查询价格和库存 |
|
Yes | Active | P-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 2 | 55 V | 1 | 42 A | 20 mΩ | HIGH RELIABILITY, AVALANCHE RATED | 140 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 170 W | 280 A | SWITCHING | SILICON | TO-263AB | R-PSSO-G2 | e3 | Not Qualified | 1 | 150 °C | -55 °C | 260 | 30 | DRAIN | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | Matte Tin (Sn) - with Nickel (Ni) barrier | GULL WING | SINGLE | IRF4905STRLPBF | 2065 | not_compliant | Mainland China | EAR99 | 5.55 | ||||||||||||
IRLR120NTRPBF
Infineon Technologies AG
|
查询价格和库存 |
|
Yes | Active | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 2 | 100 V | 1 | 10 A | 225 mΩ | AVALANCHE RATED | 85 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 48 W | 35 A | SWITCHING | SILICON | TO-252AA | R-PSSO-G2 | e3 | Not Qualified | 1 | 175 °C | 260 | 30 | DRAIN | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | Matte Tin (Sn) - with Nickel (Ni) barrier | GULL WING | SINGLE | IRLR120NTRPBF | 2065 | SMALL OUTLINE, R-PSSO-G2 | not_compliant | Mainland China | EAR99 | 5.6 | ||||||||||||
IRLR3705ZTRPBF
Infineon Technologies AG
|
查询价格和库存 |
|
Yes | Active | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 2 | 55 V | 1 | 42 A | 8 mΩ | HIGH RELIABILITY | 110 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 130 W | 360 A | SWITCHING | SILICON | TO-252AA | R-PSSO-G2 | e3 | Not Qualified | 1 | 175 °C | 260 | 30 | DRAIN | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | Matte Tin (Sn) - with Nickel (Ni) barrier | GULL WING | SINGLE | IRLR3705ZTRPBF | 2065 | SMALL OUTLINE, R-PSSO-G2 | not_compliant | Mainland China | EAR99 | 5.6 | ||||||||||||
IRF9530NPBF
Infineon Technologies AG
|
查询价格和库存 |
|
Yes | Active | P-CHANNEL | NO | SINGLE WITH BUILT-IN DIODE | 3 | 100 V | 1 | 14 A | 200 mΩ | AVALANCHE RATED, HIGH RELIABILITY | 250 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 79 W | 56 A | SWITCHING | SILICON | TO-220AB | R-PSFM-T3 | e3 | Not Qualified | 175 °C | -55 °C | 260 | 10 | DRAIN | PLASTIC/EPOXY | RECTANGULAR | FLANGE MOUNT | Matte Tin (Sn) - with Nickel (Ni) barrier | THROUGH-HOLE | SINGLE | IRF9530NPBF | 2065 | compliant | EAR99 | 5.05 | ||||||||||||||
IRFZ24NPBF
Infineon Technologies AG
|
查询价格和库存 |
|
Yes | Active | N-CHANNEL | NO | SINGLE WITH BUILT-IN DIODE | 3 | 55 V | 1 | 17 A | 70 mΩ | AVALANCHE RATED | 71 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 45 W | 68 A | SWITCHING | SILICON | TO-220AB | R-PSFM-T3 | Not Qualified | 175 °C | NOT SPECIFIED | NOT SPECIFIED | DRAIN | PLASTIC/EPOXY | RECTANGULAR | FLANGE MOUNT | THROUGH-HOLE | SINGLE | IRFZ24NPBF | 2065 | compliant | EAR99 | 5 | |||||||||||||||||
IRF540NSTRLPBF
Infineon Technologies AG
|
查询价格和库存 |
|
Yes | Active | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 2 | 100 V | 1 | 33 A | 44 mΩ | AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE | 185 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 130 W | 110 A | SWITCHING | SILICON | TO-263 | R-PSSO-G2 | e3 | Not Qualified | 1 | 175 °C | 260 | 30 | DRAIN | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | Matte Tin (Sn) - with Nickel (Ni) barrier | GULL WING | SINGLE | IRF540NSTRLPBF | 2065 | SMALL OUTLINE, R-PSSO-G2 | not_compliant | Mainland China | EAR99 | 5.85 | ||||||||||||
IRF3205PBF
Infineon Technologies AG
|
查询价格和库存 |
|
Yes | Active | N-CHANNEL | NO | SINGLE WITH BUILT-IN DIODE | 3 | 55 V | 1 | 75 A | 8 mΩ | AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE | 264 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 200 W | 390 A | SWITCHING | SILICON | TO-220AB | R-PSFM-T3 | e3 | Not Qualified | 175 °C | -55 °C | NOT SPECIFIED | NOT SPECIFIED | DRAIN | PLASTIC/EPOXY | RECTANGULAR | FLANGE MOUNT | Matte Tin (Sn) - with Nickel (Ni) barrier | THROUGH-HOLE | SINGLE | IRF3205PBF | 2065 | compliant | Mainland China | EAR99 | 5.1 | |||||||||||||
IRF640NSTRLPBF
Infineon Technologies AG
|
查询价格和库存 |
|
Yes | Active | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 2 | 200 V | 1 | 18 A | 150 mΩ | AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE | 247 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 150 W | 72 A | SWITCHING | SILICON | TO-263AB | R-PSSO-G2 | e3 | Not Qualified | 1 | 175 °C | -55 °C | 260 | 30 | DRAIN | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | Matte Tin (Sn) - with Nickel (Ni) barrier | GULL WING | SINGLE | IRF640NSTRLPBF | 2065 | not_compliant | Mainland China | EAR99 | 5.97 |