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功率场效应晶体管:

180,342 个筛选结果
功率场效应晶体管(VF)又称VMOS场效应管。在实际应用中,它有着比晶体管和MOS场效应管更好的特性。
IGBT (26,758)
型号
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配置 (50)
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最小漏源击穿电压 (50)
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最大漏极电流 (ID) (50)
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最大漏源导通电阻 (50)
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制造商 (50)
元件数量 (9)
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端子数量 (40)
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极性/信道类型 (5)
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型号
型号 Most Relevant Technical Compliance Operating Conditions Physical Other
数据手册 单价/库存
风险等级 是否无铅 是否Rohs认证
生命周期 极性/信道类型 表面贴装
配置 端子数量 最小漏源击穿电压 元件数量 最大漏极电流 (ID) 最大漏源导通电阻 其他特性 雪崩能效等级(Eas) 最大反馈电容 (Crss) FET 技术 工作模式 最大功率耗散 (Abs) 最大脉冲漏极电流 (IDM) 晶体管应用
晶体管元件材料
JEDEC-95代码 JESD-30 代码 JESD-609代码 认证状态 参考标准
湿度敏感等级 最高工作温度 最低工作温度 峰值回流温度(摄氏度) 处于峰值回流温度下的最长时间
外壳连接 封装主体材料 封装形状 封装形式 端子面层
端子形式
端子位置
Source Content uid
mfrid
包装说明
制造商包装代码
是否符合REACH标准
Country Of Origin
ECCN代码
Date Of Intro
YTEOL
零件包装代码
针数
HTS代码
NVMFS5C442NLAFT1G
onsemi
查询价格和库存
Yes Active N-CHANNEL YES SINGLE WITH BUILT-IN DIODE 6 40 V 1 130 A 3.7 mΩ 265 mJ 37 pF METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 83 W 900 A SILICON R-PDSO-F6 e3 AEC-Q101 1 175 °C -55 °C 260 30 DRAIN PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE Matte Tin (Sn) - annealed FLAT DUAL NVMFS5C442NLAFT1G 2260 SO-8FL, DFN5, 6 PIN 488AA not_compliant Malaysia EAR99 2017-04-03 5.6
NVMFS5C430NLAFT1G
onsemi
查询价格和库存
Yes Active N-CHANNEL YES SINGLE WITH BUILT-IN DIODE 5 40 V 1 2.2 mΩ 493 mJ METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 900 A SILICON R-PDSO-F5 e3 AEC-Q101 1 175 °C -55 °C 260 30 DRAIN PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE Matte Tin (Sn) - annealed FLAT DUAL NVMFS5C430NLAFT1G 2260 SOP-8 488AA not_compliant Malaysia EAR99 2017-02-24 5.6
NVMFS5C404NLAFT1G
onsemi
查询价格和库存
Yes Active N-CHANNEL YES SINGLE WITH BUILT-IN DIODE 5 40 V 1 370 A 1 mΩ 907 mJ 79.8 pF METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 200 W 900 A SILICON R-PDSO-F5 e3 AEC-Q101 1 175 °C -55 °C 260 30 DRAIN PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE Matte Tin (Sn) - annealed FLAT DUAL NVMFS5C404NLAFT1G 2260 SO-8FL, DFN5, 6 PIN 506EZ not_compliant Malaysia EAR99 2017-02-24 5.6
NVMFS5C404NLWFAFT1G
onsemi
查询价格和库存
Yes Active N-CHANNEL YES SINGLE WITH BUILT-IN DIODE 5 40 V 1 370 A 1 mΩ 907 mJ 79.8 pF METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 200 W 900 A SILICON R-PDSO-F5 e3 AEC-Q101 1 175 °C -55 °C 260 30 DRAIN PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE Matte Tin (Sn) - annealed FLAT DUAL NVMFS5C404NLWFAFT1G 2260 SO-8FL, DFN5, 6 PIN 507BE not_compliant Malaysia EAR99 2017-02-24 5.6
NVMFS5C460NLAFT1G
onsemi
查询价格和库存
Yes Active N-CHANNEL YES SINGLE WITH BUILT-IN DIODE 6 40 V 1 78 A 7.2 mΩ 107 mJ 25 pF METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 50 W 396 A SILICON R-PDSO-F6 e3 AEC-Q101 1 175 °C -55 °C 260 30 DRAIN PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE Matte Tin (Sn) - annealed FLAT DUAL NVMFS5C460NLAFT1G 2260 SO-8FL, DFN5, 6 PIN 488AA not_compliant Malaysia EAR99 2017-02-24 5.6
NVMFS5C670NLWFAFT1G
onsemi
查询价格和库存
Yes Active N-CHANNEL YES SINGLE WITH BUILT-IN DIODE 6 60 V 1 71 A 8.8 mΩ 166 mJ 15 pF METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 61 W 440 A SILICON R-PDSO-F6 e3 AEC-Q101 1 175 °C -55 °C 260 30 DRAIN PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE Matte Tin (Sn) - annealed FLAT DUAL NVMFS5C670NLWFAFT1G 2260 SO-8FL, DFN5, 6 PIN 507BE not_compliant Malaysia EAR99 2017-02-24 5.6
NVMFS5C426NLT1G
onsemi
查询价格和库存
Yes Active N-CHANNEL YES SINGLE WITH BUILT-IN DIODE 5 40 V 1 237 A 1.8 mΩ 453 mJ 70 pF METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 128 W 1.48 kA SILICON R-PDSO-F5 e3 AEC-Q101 1 175 °C -55 °C 260 30 DRAIN PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE Matte Tin (Sn) - annealed FLAT DUAL NVMFS5C426NLT1G 2260 SO-8FL, DFN5, 6 PIN 488AA not_compliant Malaysia EAR99 5.6
NVMFS5C604NLWFAFT1G
onsemi
查询价格和库存
Yes Active N-CHANNEL YES SINGLE WITH BUILT-IN DIODE 5 60 V 1 287 A 1.7 mΩ 776 mJ 40 pF METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 200 W 900 A SILICON R-PDSO-F5 e3 AEC-Q101 1 175 °C -55 °C 260 30 DRAIN PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE Matte Tin (Sn) - annealed FLAT DUAL NVMFS5C604NLWFAFT1G 2260 SO-8FL, DFN5, 6 PIN 507BE not_compliant Malaysia EAR99 2017-02-24 5.6
NVMFS5C612NLAFT1G
onsemi
查询价格和库存
Yes Active N-CHANNEL YES SINGLE WITH BUILT-IN DIODE 5 60 V 1 250 A 2.3 mΩ 451 mJ 45 pF METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 167 W 900 A SILICON R-PDSO-F5 e3 AEC-Q101 1 175 °C -55 °C 260 30 DRAIN PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE Matte Tin (Sn) - annealed FLAT DUAL NVMFS5C612NLAFT1G 2260 SO-8FL, DFN5, 6 PIN 488AA not_compliant Malaysia EAR99 2017-02-24 5.6
NTD6416ANT4G
onsemi
查询价格和库存
Yes Active N-CHANNEL YES SINGLE WITH BUILT-IN DIODE 2 100 V 1 17 A 81 mΩ 43 mJ METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 71 W 62 A SILICON R-PSSO-G2 e3 Not Qualified 1 175 °C 260 30 DRAIN PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE Matte Tin (Sn) - annealed GULL WING SINGLE NTD6416ANT4G 2260 DPAK-3 369AA not_compliant Mainland China, Malaysia EAR99 5.75 DPAK 4 LEAD Single Gauge Surface Mount 4
NTD2955T4G
onsemi
查询价格和库存
Yes Active P-CHANNEL YES SINGLE WITH BUILT-IN DIODE 2 60 V 1 12 A 180 mΩ 216 mJ METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 55 W 18 A SWITCHING SILICON R-PSSO-G2 e3 Not Qualified 1 175 °C 260 30 DRAIN PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE Matte Tin (Sn) - annealed GULL WING SINGLE NTD2955T4G 2260 369C not_compliant Mainland China, Malaysia, Vietnam EAR99 5.4 DPAK (SINGLE GAUGE) TO-252 3 8541.29.00.75
NTB25P06T4G
onsemi
查询价格和库存
Yes Active N-CHANNEL YES SINGLE WITH BUILT-IN DIODE 2 60 V 1 27.5 A 82 mΩ 600 mJ METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 100 W 80 A SWITCHING SILICON R-PSSO-G2 e3 Not Qualified 1 175 °C -55 °C 260 30 DRAIN PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE Matte Tin (Sn) - annealed GULL WING SINGLE NTB25P06T4G 2260 D2PAK-3 418B-04 not_compliant Mainland China EAR99 5.4 D2PAK 2 LEAD 3 8541.29.00.95
SIHFR1N60A-GE3
Vishay Siliconix
查询价格和库存
Active N-CHANNEL YES SINGLE 1 1.4 A METAL-OXIDE SEMICONDUCTOR 36 W 150 °C 2526 , unknown EAR99
HUF75339P3
onsemi
查询价格和库存
Yes Active N-CHANNEL NO SINGLE WITH BUILT-IN DIODE 3 55 V 1 75 A 12 mΩ METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 200 W SWITCHING SILICON TO-220AB R-PSFM-T3 e3 Not Qualified 175 °C DRAIN PLASTIC/EPOXY RECTANGULAR FLANGE MOUNT MATTE TIN THROUGH-HOLE SINGLE HUF75339P3 2260 340AT not_compliant Mainland China EAR99 5.15
NVMFS5C468NT1G
onsemi
查询价格和库存
Yes Active N-CHANNEL YES SINGLE WITH BUILT-IN DIODE 6 40 V 1 35 A 12 mΩ 75 mJ 11 pF METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 28 W 151 A SILICON R-PDSO-F6 e3 AEC-Q101 1 175 °C -55 °C 260 30 DRAIN PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE Matte Tin (Sn) - annealed FLAT DUAL NVMFS5C468NT1G 2260 SO-8FL, DFN5, 6 PIN 488AA not_compliant Malaysia EAR99 5.55
NVHL040N120SC1
onsemi
查询价格和库存
Yes Active N-CHANNEL NO SINGLE WITH BUILT-IN DIODE 3 1.2 kV 1 60 A 56 mΩ 613 mJ 12 pF METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 348 W 240 A SWITCHING SILICON CARBIDE TO-247 R-PSFM-T3 e3 AEC-Q101 175 °C -55 °C NOT SPECIFIED NOT SPECIFIED PLASTIC/EPOXY RECTANGULAR FLANGE MOUNT Matte Tin (Sn) - annealed THROUGH-HOLE SINGLE NVHL040N120SC1 2260 340CX not_compliant Mainland China EAR99 2020-01-15 6.52
FDB52N20TM
onsemi
查询价格和库存
Yes Active N-CHANNEL YES SINGLE WITH BUILT-IN DIODE 2 200 V 1 52 A 49 mΩ 2520 mJ METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 357 W 208 A SWITCHING SILICON TO-263 R-PSSO-G2 e3 Not Qualified 1 150 °C -55 °C 245 30 DRAIN PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE Matte Tin (Sn) - annealed GULL WING SINGLE FDB52N20TM 2260 D2PAK-3/2 418AJ not_compliant Mainland China EAR99 6.12
NVTFS5116PLTAG
onsemi
查询价格和库存
Yes Active P-CHANNEL YES SINGLE WITH BUILT-IN DIODE 5 60 V 1 6 A 72 mΩ 45 mJ METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 3.2 W 126 A SILICON S-PDSO-F5 e3 Not Qualified 1 175 °C 260 30 DRAIN PLASTIC/EPOXY SQUARE SMALL OUTLINE Matte Tin (Sn) - annealed FLAT DUAL NVTFS5116PLTAG 2260 WDFN-8 511AB not_compliant Malaysia EAR99 5.4 WDFN8 3.3x3.3, 0.65P 8
IRF840ASPBF
Vishay Intertechnologies
查询价格和库存
Yes Yes Active N-CHANNEL YES SINGLE WITH BUILT-IN DIODE 2 500 V 1 8 A 850 mΩ 510 mJ METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 3.1 W 32 A SWITCHING SILICON R-PSSO-G2 e3 Not Qualified 150 °C DRAIN PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE MATTE TIN GULL WING SINGLE 2516 SMALL OUTLINE, R-PSSO-G2 not_compliant EAR99 6.25 3
IRFR9024NTRPBF
Infineon Technologies AG
查询价格和库存
Yes Active P-CHANNEL YES SINGLE WITH BUILT-IN DIODE 2 55 V 1 11 A 175 mΩ AVALANCHE RATED, HIGH RELIABILITY 62 mJ METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 38 W 44 A SWITCHING SILICON TO-252AA R-PSSO-G2 e3 Not Qualified 1 150 °C -55 °C 260 30 DRAIN PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE Matte Tin (Sn) - with Nickel (Ni) barrier GULL WING SINGLE IRFR9024NTRPBF 2065 not_compliant Mainland China, USA EAR99 5.4
型号 Most Relevant Technical Compliance Operating Conditions Physical Other
数据手册 单价/库存
风险等级 是否无铅 是否Rohs认证
生命周期 极性/信道类型 表面贴装
配置 端子数量 最小漏源击穿电压 元件数量 最大漏极电流 (ID) 最大漏源导通电阻 其他特性 雪崩能效等级(Eas) 最大反馈电容 (Crss) FET 技术 工作模式 最大功率耗散 (Abs) 最大脉冲漏极电流 (IDM) 晶体管应用
晶体管元件材料
JEDEC-95代码 JESD-30 代码 JESD-609代码 认证状态 参考标准
湿度敏感等级 最高工作温度 最低工作温度 峰值回流温度(摄氏度) 处于峰值回流温度下的最长时间
外壳连接 封装主体材料 封装形状 封装形式 端子面层
端子形式
端子位置
Source Content uid
mfrid
包装说明
制造商包装代码
是否符合REACH标准
Country Of Origin
ECCN代码
Date Of Intro
YTEOL
零件包装代码
针数
HTS代码
NVMFS5C442NLAFT1G
onsemi
查询价格和库存
Yes Active N-CHANNEL YES SINGLE WITH BUILT-IN DIODE 6 40 V 1 130 A 3.7 mΩ 265 mJ 37 pF METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 83 W 900 A SILICON R-PDSO-F6 e3 AEC-Q101 1 175 °C -55 °C 260 30 DRAIN PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE Matte Tin (Sn) - annealed FLAT DUAL NVMFS5C442NLAFT1G 2260 SO-8FL, DFN5, 6 PIN 488AA not_compliant Malaysia EAR99 2017-04-03 5.6
NVMFS5C430NLAFT1G
onsemi
查询价格和库存
Yes Active N-CHANNEL YES SINGLE WITH BUILT-IN DIODE 5 40 V 1 2.2 mΩ 493 mJ METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 900 A SILICON R-PDSO-F5 e3 AEC-Q101 1 175 °C -55 °C 260 30 DRAIN PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE Matte Tin (Sn) - annealed FLAT DUAL NVMFS5C430NLAFT1G 2260 SOP-8 488AA not_compliant Malaysia EAR99 2017-02-24 5.6
NVMFS5C404NLAFT1G
onsemi
查询价格和库存
Yes Active N-CHANNEL YES SINGLE WITH BUILT-IN DIODE 5 40 V 1 370 A 1 mΩ 907 mJ 79.8 pF METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 200 W 900 A SILICON R-PDSO-F5 e3 AEC-Q101 1 175 °C -55 °C 260 30 DRAIN PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE Matte Tin (Sn) - annealed FLAT DUAL NVMFS5C404NLAFT1G 2260 SO-8FL, DFN5, 6 PIN 506EZ not_compliant Malaysia EAR99 2017-02-24 5.6
NVMFS5C404NLWFAFT1G
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