所有内容版权所有 © 2006 - 2024
ICP经营许可证 苏B2-20140176
苏ICP备14012660号-4
版权所有@苏州灵动帧格网络科技有限公司
| 型号 | Most Relevant | Technical | Compliance | Operating Conditions | Physical | Other | ||||||||||||||||||||||||||||||||||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| 数据手册 |
单价/库存
|
风险等级 |
是否无铅
|
是否Rohs认证
|
生命周期
|
标称二极管电容 |
最大反向电流
|
最大功率耗散
|
二极管元件材料 | 最小击穿电压 | 二极管类型 | 配置 |
表面贴装
|
最大重复峰值反向电压
|
元件数量 | 其他特性 | 二极管电容容差 | 最小二极管电容比 | 频带 |
最小质量因数
|
反向测试电压
|
变容二极管分类
|
认证状态
|
JESD-30 代码 | JESD-609代码 | JEDEC-95代码 | 湿度敏感等级 |
最高工作温度
|
最低工作温度
|
峰值回流温度（摄氏度）
|
处于峰值回流温度下的最长时间
|
端子数量 |
封装主体材料
|
封装形状
|
封装形式
|
端子面层
|
端子形式
|
端子位置
|
Source Content uid
|
mfrid
|
是否符合REACH标准
|
ECCN代码
|
HTS代码
|
YTEOL
|
零件包装代码
|
包装说明
|
针数
|
制造商包装代码
|
Country Of Origin
|
Date Of Intro
|
||
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1SV324(TPH3,F)
Toshiba America Electronic Components
|
查询价格和库存 |
|
Yes | Active | 46.75 pF | VARIABLE CAPACITANCE DIODE | SINGLE | YES | 10 V | 1 | 4 | ABRUPT | SMALL OUTLINE | 1SV324(TPH3,F) | 2484 | unknown | EAR99 | 8541.10.00.80 | 6 | |||||||||||||||||||||||||||||||||
|
SMV1249-079LF
Skyworks Solutions Inc
|
查询价格和库存 |
|
Yes | Yes | Active | 31 pF | 20 nA | 250 mW | SILICON | 15 V | VARIABLE CAPACITANCE DIODE | SINGLE | YES | 15 V | 1 | 11 | 600 | 12 V | HYPERABRUPT | Not Qualified | R-PDSO-F2 | e3 | 1 | 125 °C | -55 °C | 260 | 2 | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | TIN | FLAT | DUAL | 2408 | compliant | EAR99 | 8541.10.00.60 | 7.32 | SC-79 | SC-79, 2 PIN | 2 | |||||||||||
|
1SV323,H3F(T
Toshiba America Electronic Components
|
查询价格和库存 |
|
Active | VARIABLE CAPACITANCE DIODE | NOT SPECIFIED | NOT SPECIFIED | 1SV323,H3F(T | 2484 | unknown | EAR99 | ||||||||||||||||||||||||||||||||||||||||||
|
1SV305,L3F(T
Toshiba America Electronic Components
|
查询价格和库存 |
|
Active | 18.3 pF | SILICON | VARIABLE CAPACITANCE DIODE | SINGLE | YES | 1 | 5.46 % | 2.8 | VERY HIGH FREQUENCY | ABRUPT | R-PDSO-F2 | 125 °C | NOT SPECIFIED | NOT SPECIFIED | 2 | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | FLAT | DUAL | 1SV305,L3F(T | 2484 | unknown | EAR99 | 8541.10.00.80 | 7.12 | R-PDSO-F2 | ||||||||||||||||||||||
|
1SV279,H3F(T
Toshiba America Electronic Components
|
查询价格和库存 |
|
Active | 15 pF | 3 nA | SILICON | 15 V | VARIABLE CAPACITANCE DIODE | SINGLE | YES | 15 V | 1 | 6.67 % | 2 | VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY | 15 V | ABRUPT | R-PDSO-F2 | 125 °C | NOT SPECIFIED | NOT SPECIFIED | 2 | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | FLAT | DUAL | 1SV279,H3F(T | 2484 | unknown | EAR99 | 8541.10.00.80 | 7.12 | |||||||||||||||||||
|
BBY5702VH6327XTSA1
Infineon Technologies AG
|
查询价格和库存 |
|
Yes | Active | VARIABLE CAPACITANCE DIODE | e3 | 1 | NOT SPECIFIED | NOT SPECIFIED | Tin (Sn) | BBY5702VH6327XTSA1 | 2065 | compliant | EAR99 | ||||||||||||||||||||||||||||||||||||||
|
BBY5802VH6327XTSA1
Infineon Technologies AG
|
查询价格和库存 |
|
Yes | Active | 18.3 pF | SILICON | 10 V | VARIABLE CAPACITANCE DIODE | SINGLE | YES | 1 | 4.89 % | 1.15 | HYPERABRUPT | R-PDSO-F2 | e3 | 1 | 150 °C | -55 °C | NOT SPECIFIED | NOT SPECIFIED | 2 | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | Tin (Sn) | FLAT | DUAL | BBY5802VH6327XTSA1 | 2065 | compliant | EAR99 | 8541.10.00.80 | 7.32 | R-PDSO-F2 | |||||||||||||||||
|
1SV281(TPH3,F)
Toshiba America Electronic Components
|
查询价格和库存 |
|
Yes | Active | 16 pF | VARIABLE CAPACITANCE DIODE | SINGLE | YES | 10 V | 1 | 1.8 | ABRUPT | SMALL OUTLINE | 1SV281(TPH3,F) | 2484 | unknown | EAR99 | 8541.10.00.80 | 6 | |||||||||||||||||||||||||||||||||
|
BB914E6327HTSA1
Infineon Technologies AG
|
查询价格和库存 |
|
Yes | Yes | Active | 43.75 pF | SILICON | 18 V | VARIABLE CAPACITANCE DIODE | COMMON CATHODE, 2 ELEMENTS | YES | 2 | 1.5% MATCHED SETS AVAILABLE | 2.86 % | 2.28 | ABRUPT | Not Qualified | R-PDSO-G3 | e3 | 1 | NOT SPECIFIED | NOT SPECIFIED | 3 | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | Tin (Sn) | GULL WING | DUAL | BB914E6327HTSA1 | 2065 | compliant | EAR99 | 8541.10.00.80 | 7.12 | SOT-23 | R-PDSO-G3 | 3 | ||||||||||||||
|
BB844E6327HTSA1
Infineon Technologies AG
|
查询价格和库存 |
|
Yes | Active | 43.75 pF | SILICON | 18 V | VARIABLE CAPACITANCE DIODE | COMMON CATHODE, 2 ELEMENTS | YES | 2 | CAPACITANCE MATCHED TO 1.5% | 2.86 % | 3.2 | VERY HIGH FREQUENCY | ABRUPT | R-PDSO-G3 | e3 | 1 | 150 °C | -55 °C | NOT SPECIFIED | NOT SPECIFIED | 3 | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | Tin (Sn) | GULL WING | DUAL | BB844E6327HTSA1 | 2065 | compliant | EAR99 | 8541.10.00.80 | 7.12 | ROHS COMPLIANT, SOT23, 3 PIN | |||||||||||||||
|
BBY6502VH6327XTSA1
Infineon Technologies AG
|
查询价格和库存 |
|
Yes | Active | 29.5 pF | SILICON | 15 V | VARIABLE CAPACITANCE DIODE | SINGLE | YES | 1 | 4.41 % | 10 | HYPERABRUPT | R-PDSO-F2 | e3 | 1 | 150 °C | -55 °C | NOT SPECIFIED | NOT SPECIFIED | 2 | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | Tin (Sn) | FLAT | DUAL | BBY6502VH6327XTSA1 | 2065 | compliant | EAR99 | 8541.10.00.80 | 7.32 | R-PDSO-F2 | |||||||||||||||||
|
BBY6602VH6327XTSA1
Infineon Technologies AG
|
查询价格和库存 |
|
Yes | Active | VARIABLE CAPACITANCE DIODE | e3 | 1 | NOT SPECIFIED | NOT SPECIFIED | Tin (Sn) | BBY6602VH6327XTSA1 | 2065 | compliant | EAR99 | ||||||||||||||||||||||||||||||||||||||
|
BBY5302VH6327XTSA1
Infineon Technologies AG
|
查询价格和库存 |
|
Yes | Active | 5.3 pF | SILICON | 6 V | VARIABLE CAPACITANCE DIODE | SINGLE | YES | 1 | 9.43 % | 1.8 | ULTRA HIGH FREQUENCY | HYPERABRUPT | R-PDSO-F2 | e3 | 1 | 125 °C | -55 °C | NOT SPECIFIED | NOT SPECIFIED | 2 | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | Tin (Sn) | FLAT | DUAL | BBY5302VH6327XTSA1 | 2065 | compliant | EAR99 | 8541.10.00.80 | 7.32 | R-PDSO-F2 | ||||||||||||||||
|
BBY5502VH6327XTSA1
Infineon Technologies AG
|
查询价格和库存 |
|
Yes | Active | 18.6 pF | SILICON | 16 V | VARIABLE CAPACITANCE DIODE | SINGLE | YES | 1 | 5.66 % | 2 | HYPERABRUPT | R-PDSO-F2 | e3 | 1 | 150 °C | -55 °C | NOT SPECIFIED | NOT SPECIFIED | 2 | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | Matte Tin (Sn) | FLAT | DUAL | BBY5502VH6327XTSA1 | 2065 | compliant | EAR99 | 8541.10.00.80 | 7.32 | SC-79, 2 PIN | |||||||||||||||||
|
1SV280(TPH3,F)
Toshiba America Electronic Components
|
查询价格和库存 |
|
Yes | Active | 4.25 pF | VARIABLE CAPACITANCE DIODE | SINGLE | YES | 15 V | 1 | 2 | ABRUPT | SMALL OUTLINE | 1SV280(TPH3,F) | 2484 | unknown | EAR99 | 8541.10.00.80 | 6 | |||||||||||||||||||||||||||||||||
|
BBY5303WE6327HTSA1
Infineon Technologies AG
|
查询价格和库存 |
|
Yes | Active | 5.3 pF | SILICON | 6 V | VARIABLE CAPACITANCE DIODE | SINGLE | YES | 1 | 9.43 % | 1.8 | ULTRA HIGH FREQUENCY | HYPERABRUPT | R-PDSO-G2 | e3 | 1 | 125 °C | -55 °C | NOT SPECIFIED | NOT SPECIFIED | 2 | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | Tin (Sn) | GULL WING | DUAL | BBY5303WE6327HTSA1 | 2065 | compliant | EAR99 | 8541.10.00.80 | 7.32 | R-PDSO-G2 | ||||||||||||||||
|
BB535E7904HTSA1
Infineon Technologies AG
|
查询价格和库存 |
|
Yes | Not Recommended | 18.7 pF | SILICON | VARIABLE CAPACITANCE DIODE | SINGLE | YES | 1 | LOW INDUCTANCE | 6.67 % | 8.2 | ULTRA HIGH FREQUENCY | ABRUPT | R-PDSO-G2 | e3 | 1 | 150 °C | -55 °C | NOT SPECIFIED | NOT SPECIFIED | 2 | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | Tin (Sn) | GULL WING | DUAL | BB535E7904HTSA1 | 2065 | compliant | EAR99 | 8541.10.00.80 | 3 | R-PDSO-G2 | ||||||||||||||||
|
BB135,115
NXP Semiconductors
|
查询价格和库存 |
|
Yes | Not Recommended | 19.25 pF | 10 nA | SILICON | VARIABLE CAPACITANCE DIODE | SINGLE | YES | 30 V | 1 | 8.9 | ULTRA HIGH FREQUENCY | 30 V | ABRUPT | Not Qualified | R-PDSO-G2 | e3 | 1 | 125 °C | -55 °C | 260 | 30 | 2 | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | Tin (Sn) | GULL WING | DUAL | BB135,115 | 2245 | compliant | EAR99 | 8541.10.00 | 3 | SOD | PLASTIC, SMD, 2 PIN | 2 | SOD323 | Mainland China | ||||||||||
|
BB640E6327HTSA1
Infineon Technologies AG
|
查询价格和库存 |
|
Yes | Yes | Not Recommended | 69 pF | SILICON | VARIABLE CAPACITANCE DIODE | SINGLE | YES | 1 | 19.5 | ABRUPT | Not Qualified | R-PDSO-G2 | e3 | 1 | NOT SPECIFIED | NOT SPECIFIED | 2 | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | Tin (Sn) | GULL WING | DUAL | BB640E6327HTSA1 | 2065 | compliant | EAR99 | 8541.10.00.80 | 3 | SOD | R-PDSO-G2 | 2 | SOD-323 | 1997-02-01 | |||||||||||||||
|
BBY40,235
NXP Semiconductors
|
查询价格和库存 |
|
Yes | Not Recommended | 29 pF | SILICON | 30 V | VARIABLE CAPACITANCE DIODE | SINGLE | YES | 30 V | 1 | 10.34 % | 5 | VERY HIGH FREQUENCY | ABRUPT | R-PDSO-G3 | e3 | TO-236AB | 1 | 125 °C | -55 °C | 260 | 30 | 3 | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | Tin (Sn) | GULL WING | DUAL | BBY40,235 | 2245 | compliant | EAR99 | 8541.10.00 | 3 | TO-236 | 3 | SOT23 | Mainland China | |||||||||||
所有内容版权所有 © 2006 - 2024
ICP经营许可证 苏B2-20140176
苏ICP备14012660号-4
版权所有@苏州灵动帧格网络科技有限公司
