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EPROM: 23,326 个筛选结果
最长访问时间 (50)
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最大时钟频率 (fCLK) (4)
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制造商 (50)
内存密度 (19)
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内存宽度 (4)
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组织 (34)
Most Relevant Technical Compliance Operating Conditions Physical Dimensions Other
制造商型号 Composite Price
风险等级 是否无铅 是否Rohs认证
生命周期 内存密度 内存宽度 组织 标称供电电压 (Vsup)
电源
最长访问时间 最大时钟频率 (fCLK) 内存集成电路类型 其他特性 备用内存宽度 数据保留时间-最小值 耐久性 I/O 类型 I2C控制字节 功能数量 字数代码 字数 工作模式 输出特性 并行/串行 编程电压
串行总线类型
最大待机电流
最大压摆率
最大供电电压 (Vsup)
最小供电电压 (Vsup)
技术 温度等级
最长写入周期时间 (tWC)
写保护
JESD-30 代码 认证状态
JESD-609代码 湿度敏感等级 最高工作温度 最低工作温度 峰值回流温度(摄氏度) 筛选级别
处于峰值回流温度下的最长时间
端子数量 封装主体材料 封装代码 封装等效代码 封装形状 封装形式 表面贴装
端子面层
端子形式
端子节距
端子位置
座面最大高度
长度 宽度
零件包装代码
包装说明
针数
是否符合REACH标准
ECCN代码
HTS代码
Source Content uid
交付时间
制造商包装代码
5962-8606305YA
e2v technologies
查询价格
Active 262.144 kbit 8 32KX8 5 V 5 V 150 ns UVPROM COMMON 1 32000 32.768 k ASYNCHRONOUS 3-STATE PARALLEL 12.5 V 300 µA 50 µA 5.5 V 4.5 V CMOS MILITARY R-CQCC-N32 Qualified e0 125 °C -55 °C 38535Q/M;38534H;883B 32 CERAMIC, METAL-SEALED COFIRED QCCN LCC32,.45X.55 RECTANGULAR CHIP CARRIER YES TIN LEAD NO LEAD 1.27 mm QUAD QFJ CERAMIC, LCC-32 32 compliant EAR99 8542.32.00.61
5962-8606304XA
e2v technologies
查询价格
Active 262.144 kbit 8 32KX8 5 V 5 V 170 ns UVPROM COMMON 1 32000 32.768 k ASYNCHRONOUS 3-STATE PARALLEL 12.5 V 300 µA 50 µA 5.5 V 4.5 V CMOS MILITARY R-GDIP-T28 Qualified e0 125 °C -55 °C 38535Q/M;38534H;883B 28 CERAMIC, GLASS-SEALED DIP DIP28,.6 RECTANGULAR IN-LINE NO TIN LEAD THROUGH-HOLE 2.54 mm DUAL DIP CERAMIC, DIP-28 28 compliant EAR99 8542.32.00.61
QP7C271-45WC
e2v technologies
查询价格
Active 262.144 kbit 8 32KX8 5 V 45 ns UVPROM 1 32000 32.768 k ASYNCHRONOUS PARALLEL 5.5 V 4.5 V CMOS COMMERCIAL R-GDIP-T28 70 °C 28 CERAMIC, GLASS-SEALED DIP RECTANGULAR IN-LINE NO THROUGH-HOLE DUAL DIP 0.300 INCH, CERAMIC, WINDOWED, DIP-28 28 compliant EAR99 8542.32.00.61
AT93C46DY6-YH-E
Microchip Technology Inc
查询价格
Yes Active 1.024 kbit 16 64X16 5 V 2 MHz EEPROM ALSO OPERATES AT 1MHZ AT 2.7MIN 8 100 1000000 Write/Erase Cycles SEPARATE 1 64 64 words SYNCHRONOUS SERIAL 5 V MICROWIRE 15 µA 2 µA 5.5 V 4.5 V CMOS INDUSTRIAL 5 ms SOFTWARE R-PDSO-G8 85 °C -40 °C 8 PLASTIC/EPOXY HVSON SOLCC8,.11,20 RECTANGULAR SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE, SHRINK PITCH YES NO LEAD 500 µm DUAL 600 µm 3 mm 2 mm UDFN-8 compliant EAR99 8542.32.00.51 AT93C46DY6-YH-E 8 weeks
AT93C46DY6-YH-T
Microchip Technology Inc
查询价格
Yes Yes Active 1.024 kbit 16 64X16 5 V 2/5 V 2 MHz EEPROM ALSO OPERATES AT 1MHZ AT 2.7MIN 8 100 1000000 Write/Erase Cycles SEPARATE 1 64 64 words SYNCHRONOUS SERIAL 5 V MICROWIRE 15 µA 2 µA 5.5 V 4.5 V CMOS INDUSTRIAL 5 ms SOFTWARE R-PDSO-G8 Not Qualified e4 1 85 °C -40 °C 260 40 8 PLASTIC/EPOXY HVSON SOLCC8,.11,20 RECTANGULAR SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE, SHRINK PITCH YES Nickel/Palladium/Gold (Ni/Pd/Au) NO LEAD 500 µm DUAL 600 µm 3 mm 2 mm UDFN-8 compliant 3A991.A.2 8542.31.00.01 AT93C46DY6-YH-T 8 weeks
CAT24C128HU4IGT3
onsemi
查询价格
Yes Active 2/5 V 100 1000000 Write/Erase Cycles 1010DDDR I2C HARDWARE Not Qualified e4 1 NOT SPECIFIED NOT SPECIFIED Nickel/Palladium/Gold (Ni/Pd/Au) , 8 compliant EAR99 8542.32.00.51 CAT24C128HU4IGT3 4 weeks 517AZ
CAT24C128WI-GT3
onsemi
查询价格
Yes Active 2/5 V 100 1000000 Write/Erase Cycles 1010DDDR I2C HARDWARE Not Qualified e4 1 260 40 Nickel/Palladium/Gold (Ni/Pd/Au) SOIC , 8 compliant EAR99 8542.32.00.51 CAT24C128WI-GT3 751BD
CAT24C128YI-GT3
onsemi
查询价格
Yes Active 2/5 V 100 1000000 Write/Erase Cycles 1010DDDR I2C HARDWARE Not Qualified e4 1 260 40 Nickel/Palladium/Gold (Ni/Pd/Au) TSSOP , 8 compliant EAR99 8542.32.00.51 CAT24C128YI-GT3 8 weeks 948AL
AT93C46D-TH-T
Microchip Technology Inc
查询价格
Yes Yes Active 1.024 kbit 16 64X16 5 V 2/5 V 2 MHz EEPROM ALSO OPERATES AT 1MHZ AT 2.7MIN 8 100 1000000 Write/Erase Cycles SEPARATE 1 64 64 words SYNCHRONOUS SERIAL 5 V MICROWIRE 15 µA 2 µA 5.5 V 4.5 V CMOS INDUSTRIAL 5 ms SOFTWARE R-PDSO-G8 Not Qualified e4 1 85 °C -40 °C 260 40 8 PLASTIC/EPOXY TSOP1 TSSOP8,.25 RECTANGULAR SMALL OUTLINE, THIN PROFILE YES Nickel/Palladium/Gold (Ni/Pd/Au) GULL WING 650 µm DUAL 1.2 mm 4.4 mm 3 mm TSSOP-8 compliant 3A991.A.2 8542.31.00.01 AT93C46D-TH-T 6 weeks
AT93C46E-TH-B
Microchip Technology Inc
查询价格
Yes Yes Active 1.024 kbit 16 64X16 5 V 2/5 V 2 MHz EEPROM ALSO OPERATES AT 1MHZ AT 2.7MIN 100 1000000 Write/Erase Cycles SEPARATE 1 64 64 words SYNCHRONOUS SERIAL 5 V MICROWIRE 15 µA 2 µA 5.5 V 4.5 V CMOS INDUSTRIAL 5 ms SOFTWARE R-PDSO-G8 Not Qualified e4 1 85 °C -40 °C 260 40 8 PLASTIC/EPOXY TSOP1 TSSOP8,.25 RECTANGULAR SMALL OUTLINE, THIN PROFILE YES Nickel/Palladium/Gold (Ni/Pd/Au) GULL WING 650 µm DUAL 1.2 mm 4.4 mm 3 mm TSSOP-8 compliant 3A991.A.2 8542.31.00.01 AT93C46E-TH-B 7 weeks
AT93C46DN-SH-B
Microchip Technology Inc
查询价格
Yes Yes Active 1.024 kbit 16 64X16 5 V 2/5 V 2 MHz EEPROM ALSO OPERATES AT 1MHZ AT 2.7MIN 8 100 1000000 Write/Erase Cycles SEPARATE 1 64 64 words SYNCHRONOUS SERIAL 5 V MICROWIRE 15 µA 2 µA 5.5 V 4.5 V CMOS INDUSTRIAL 5 ms SOFTWARE R-PDSO-G8 Not Qualified e4 1 85 °C -40 °C 260 40 8 PLASTIC/EPOXY SOP SOP8,.25 RECTANGULAR SMALL OUTLINE YES Nickel/Palladium/Gold (Ni/Pd/Au) GULL WING 1.27 mm DUAL 1.75 mm 4.9 mm 3.9 mm SOIC-8 compliant 3A991.A.2 8542.31.00.01 AT93C46DN-SH-B 6 weeks
AT93C46EN-SH-T
Microchip Technology Inc
查询价格
Yes Yes Active 1.024 kbit 16 64X16 5 V 2/5 V 2 MHz EEPROM ALSO OPERATES AT 1MHZ AT 2.7MIN 100 1000000 Write/Erase Cycles SEPARATE 1 64 64 words SYNCHRONOUS SERIAL 5 V MICROWIRE 15 µA 2 µA 5.5 V 4.5 V CMOS INDUSTRIAL 5 ms SOFTWARE R-PDSO-G8 Not Qualified e4 3 85 °C -40 °C 260 40 8 PLASTIC/EPOXY SOP SOP8,.25 RECTANGULAR SMALL OUTLINE YES Nickel/Palladium/Gold (Ni/Pd/Au) GULL WING 1.27 mm DUAL 1.75 mm 4.9 mm 3.9 mm SOIC-8 compliant 3A991.A.2 8542.31.00.01 AT93C46EN-SH-T 6 weeks
NTE2716
NTE Electronics Inc
查询价格
Yes Active 16.384 kbit 8 2KX8 5 V 5 V 350 ns UVPROM COMMON 1 2000 2.048 k ASYNCHRONOUS 3-STATE PARALLEL 25 V 160 µA 5.25 V 4.75 V NMOS COMMERCIAL R-XDIP-T24 Not Qualified 70 °C NOT SPECIFIED NOT SPECIFIED 24 UNSPECIFIED DIP DIP24,.6 RECTANGULAR IN-LINE NO THROUGH-HOLE 2.54 mm DUAL DIP DIP, DIP24,.6 24 unknown EAR99 8542.32.00.61
5962-8606310UA
e2v technologies
查询价格
Active 262.144 kbit 8 32KX8 5 V 5 V 45 ns UVPROM COMMON 1 32000 32.768 k ASYNCHRONOUS 3-STATE PARALLEL 12.5 V 45 mA 130 µA 5.5 V 4.5 V CMOS MILITARY R-GDIP-T28 Qualified e0 125 °C -55 °C 38535Q/M;38534H;883B 28 CERAMIC, GLASS-SEALED DIP DIP28,.3 RECTANGULAR IN-LINE NO TIN LEAD THROUGH-HOLE 2.54 mm DUAL DIP CERAMIC, DIP-28 28 compliant EAR99 8542.32.00.61
5962-8680503QA
e2v technologies
查询价格
Active 1.0486 Mbit 16 64KX16 5 V 5 V 90 ns UVPROM COMMON 1 64000 65.536 k ASYNCHRONOUS 3-STATE PARALLEL 120 µA 60 µA 5.5 V 4.5 V CMOS MILITARY R-GDIP-T40 Qualified e0 125 °C -55 °C 38535Q/M;38534H;883B 40 CERAMIC, GLASS-SEALED DIP DIP40,.6 RECTANGULAR IN-LINE NO TIN LEAD THROUGH-HOLE 2.54 mm DUAL DIP DIP, DIP40,.6 40 compliant EAR99 8542.32.00.61
5962-87515073A
e2v technologies
查询价格
Active 65.536 kbit 8 8KX8 5 V 5 V 35 ns UVPROM COMMON 1 8000 8.192 k ASYNCHRONOUS 3-STATE PARALLEL 30 mA 120 µA 5.5 V 4.5 V CMOS MILITARY S-CQCC-N28 Qualified e0 125 °C -55 °C 38535Q/M;38534H;883B 28 CERAMIC, METAL-SEALED COFIRED QCCN LCC28,.45SQ SQUARE CHIP CARRIER YES TIN LEAD NO LEAD 1.27 mm QUAD QLCC CERAMIC, LCC-28 28 compliant EAR99 8542.32.00.61
5962-8751508LA
e2v technologies
查询价格
Active 65.536 kbit 8 8KX8 5 V 5 V 35 ns UVPROM COMMON 1 8000 8.192 k ASYNCHRONOUS 3-STATE PARALLEL 30 mA 120 µA 5.5 V 4.5 V CMOS MILITARY R-GDIP-T24 Qualified e0 125 °C -55 °C 38535Q/M;38534H;883B 24 CERAMIC, GLASS-SEALED WDIP DIP24,.3 RECTANGULAR IN-LINE, WINDOW NO TIN LEAD THROUGH-HOLE 2.54 mm DUAL 5.08 mm 32.005 mm 7.62 mm WDIP, DIP24,.3 compliant EAR99 8542.32.00.61
NTE2732A
NTE Electronics Inc
查询价格
No No Active 32.768 kbit 8 4KX8 5 V 5 V 200 ns UVPROM COMMON 1 4000 4.096 k ASYNCHRONOUS 3-STATE PARALLEL 21 V 125 µA 5.25 V 4.75 V NMOS COMMERCIAL R-XDIP-T24 Not Qualified e0 70 °C NOT SPECIFIED NOT SPECIFIED 24 UNSPECIFIED DIP DIP24,.6 RECTANGULAR IN-LINE NO Tin/Lead (Sn/Pb) THROUGH-HOLE 2.54 mm DUAL compliant EAR99 8542.32.00.61
AT93C46E-PU
Microchip Technology Inc
查询价格
Yes Yes Active 1.024 kbit 16 64X16 5 V 2/5 V 2 MHz EEPROM ALSO OPERATES AT 1MHZ AT 2.7MIN 100 1000000 Write/Erase Cycles SEPARATE 1 64 64 words SYNCHRONOUS SERIAL 5 V 3-WIRE 15 µA 2 µA 5.5 V 4.5 V CMOS INDUSTRIAL 5 ms SOFTWARE R-PDIP-T8 Not Qualified e3 85 °C -40 °C NOT APPLICABLE NOT APPLICABLE 8 PLASTIC/EPOXY DIP DIP8,.3 RECTANGULAR IN-LINE NO Matte Tin (Sn) - annealed THROUGH-HOLE 2.54 mm DUAL 5.334 mm 9.271 mm 7.62 mm DIP-8 compliant 3A991.A.2 8542.31.00.01 AT93C46E-PU 5 weeks
MD27C256-25/B
Rochester Electronics LLC
查询价格
Active 262.144 kbit 8 32KX8 5 V 250 ns UVPROM 1 32000 32.768 k ASYNCHRONOUS PARALLEL 5.5 V 4.5 V CMOS MILITARY R-CQCC-J32 125 °C -55 °C 32 CERAMIC, METAL-SEALED COFIRED QCCJ RECTANGULAR CHIP CARRIER YES J BEND 1.27 mm QUAD 4.2418 mm 15.04 mm 11.557 mm CERAMIC, JLCC-32 unknown EAR99 8542.32.00.61
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