Most Relevant | Technical | Compliance | Operating Conditions | Physical | Dimensions | Other | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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制造商型号 | 制造商 | 数据手册 |
价格/库存
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风险等级 | 是否无铅 |
是否Rohs认证
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生命周期 | 内存密度 | 内存宽度 | 组织 |
标称供电电压 (Vsup)
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电源
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最长访问时间 | 最大时钟频率 (fCLK) | 内存集成电路类型 | 其他特性 | 备用内存宽度 | 数据保留时间-最小值 | 耐久性 | I/O 类型 | 功能数量 | 端口数量 | 字数代码 | 字数 | 工作模式 | 输出特性 | 并行/串行 |
编程电压
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反向引出线
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串行总线类型
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最大待机电流
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最大压摆率
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最大供电电压 (Vsup)
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最小供电电压 (Vsup)
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技术 |
温度等级
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类型
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最长写入周期时间 (tWC)
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写保护
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JESD-30 代码 |
认证状态
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JESD-609代码 | 湿度敏感等级 | 最高工作温度 | 最低工作温度 | 峰值回流温度(摄氏度) |
筛选级别
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处于峰值回流温度下的最长时间
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端子数量 | 封装主体材料 | 封装代码 | 封装等效代码 | 封装形状 | 封装形式 |
表面贴装
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端子面层
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端子形式
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端子节距
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端子位置
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座面最大高度
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长度 |
宽度
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Source Content uid
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零件包装代码
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包装说明
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针数
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制造商包装代码
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是否符合REACH标准
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Country Of Origin
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ECCN代码
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HTS代码
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YTEOL
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交付时间
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CAT24C128WI-GT3
|
onsemi
|
查询价格和库存 |
|
Yes | Active | 131.072 kbit | 8 | 16KX8 | 3.3 V | 2/5 V | 1 MHz | EEPROM | 5MICROAMP STANDBY CURRENT AVAILABLE @ 12... more | 1 | 100 | 1000000 Write/Erase Cycles | 1 | 16000 | 16.384 k | SYNCHRONOUS | OPEN-DRAIN | SERIAL | 3.3 V | I2C | 2 µA | 3 µA | 5.5 V | 2.5 V | CMOS | INDUSTRIAL | 5 ms | HARDWARE | R-PDSO-G8 | Not Qualified | e4 | 1 | 85 °C | -40 °C | 260 | 30 | 8 | PLASTIC/EPOXY | SOP | SOP8,.25 | RECTANGULAR | SMALL OUTLINE | YES | NICKEL PALLADIUM GOLD | GULL WING | 1.27 mm | DUAL | 1.75 mm | 4.9 mm | 3.9 mm | CAT24C128WI-GT3 | SOIC | , | 8 | 751BD | compliant | Thailand | EAR99 | 8542.32.00.51 | 6.4 | |||||||||
AT93C46DN-SH-B
|
Microchip Technology Inc
|
查询价格和库存 |
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Yes | Yes | Active | 1.024 kbit | 16 | 64X16 | 5 V | 2/5 V | 2 MHz | EEPROM | ALSO OPERATES AT 1MHZ AT 2.7MIN AND AT 0.25MHZ AT 1.8MIN | 8 | 100 | 1000000 Write/Erase Cycles | SEPARATE | 1 | 1 | 64 | 64 words | SYNCHRONOUS | 3-STATE | SERIAL | 5 V | NO | 3-WIRE | 15 µA | 2 µA | 5.5 V | 4.5 V | CMOS | INDUSTRIAL | 5 ms | HARDWARE | R-PDSO-G8 | Not Qualified | e4 | 1 | 85 °C | -40 °C | 260 | 40 | 8 | PLASTIC/EPOXY | SOP | SOP8,.23 | RECTANGULAR | SMALL OUTLINE | YES | Nickel/Palladium/Gold (Ni/Pd/Au) | GULL WING | 1.27 mm | DUAL | 1.75 mm | 4.9 mm | 3.9 mm | AT93C46DN-SH-B | SOIC-8 | compliant | Thailand | 3A991.A.2 | 8542.31.00.01 | 5.8 | [object Object] | |||||||
5962-8606305YA
|
e2v technologies
|
查询价格和库存 |
|
Active | 262.144 kbit | 8 | 32KX8 | 5 V | 5 V | 150 ns | UVPROM | COMMON | 1 | 32000 | 32.768 k | ASYNCHRONOUS | 3-STATE | PARALLEL | 12.5 V | 300 µA | 50 µA | 5.5 V | 4.5 V | CMOS | MILITARY | R-CQCC-N32 | Qualified | e0 | 125 °C | -55 °C | 38535Q/M;38534H;883B | 32 | CERAMIC, METAL-SEALED COFIRED | QCCN | LCC32,.45X.55 | RECTANGULAR | CHIP CARRIER | YES | TIN LEAD | NO LEAD | 1.27 mm | QUAD | QFJ | CERAMIC, LCC-32 | 32 | compliant | USA | EAR99 | 8542.32.00.61 | 4.7 | |||||||||||||||||||||||
5962-8606304XA
|
e2v technologies
|
查询价格和库存 |
|
Active | 262.144 kbit | 8 | 32KX8 | 5 V | 5 V | 170 ns | UVPROM | COMMON | 1 | 32000 | 32.768 k | ASYNCHRONOUS | 3-STATE | PARALLEL | 12.5 V | 300 µA | 50 µA | 5.5 V | 4.5 V | CMOS | MILITARY | R-GDIP-T28 | Qualified | e0 | 125 °C | -55 °C | 38535Q/M;38534H;883B | 28 | CERAMIC, GLASS-SEALED | DIP | DIP28,.6 | RECTANGULAR | IN-LINE | NO | TIN LEAD | THROUGH-HOLE | 2.54 mm | DUAL | DIP | CERAMIC, DIP-28 | 28 | compliant | USA | EAR99 | 8542.32.00.61 | 4.25 | |||||||||||||||||||||||
AT93C46EN-SH-T
|
Microchip Technology Inc
|
查询价格和库存 |
|
Yes | Yes | Active | 1.024 kbit | 16 | 64X16 | 5 V | 2/5 V | 2 MHz | EEPROM | ALSO OPERATES AT 1MHZ AT 2.7MIN AND AT 0.25MHZ AT 1.8MIN | 100 | 1000000 Write/Erase Cycles | SEPARATE | 1 | 1 | 64 | 64 words | SYNCHRONOUS | 3-STATE | SERIAL | 5 V | NO | 3-WIRE | 15 µA | 2 µA | 5.5 V | 4.5 V | CMOS | INDUSTRIAL | 5 ms | HARDWARE | R-PDSO-G8 | Not Qualified | e4 | 3 | 85 °C | -40 °C | 260 | 40 | 8 | PLASTIC/EPOXY | SOP | SOP8,.23 | RECTANGULAR | SMALL OUTLINE | YES | Nickel/Palladium/Gold (Ni/Pd/Au) | GULL WING | 1.27 mm | DUAL | 1.75 mm | 4.9 mm | 3.9 mm | AT93C46EN-SH-T | SOIC-8 | compliant | Thailand | 3A991.A.2 | 8542.31.00.01 | 5.8 | [object Object] | ||||||||
AT93C46E-TH-B
|
Microchip Technology Inc
|
查询价格和库存 |
|
Yes | Yes | Active | 1.024 kbit | 16 | 64X16 | 5 V | 2/5 V | 2 MHz | EEPROM | ALSO OPERATES AT 1MHZ AT 2.7MIN AND AT 0.25MHZ AT 1.8MIN | 100 | 1000000 Write/Erase Cycles | SEPARATE | 1 | 1 | 64 | 64 words | SYNCHRONOUS | 3-STATE | SERIAL | 5 V | NO | 3-WIRE | 15 µA | 2 µA | 5.5 V | 4.5 V | CMOS | INDUSTRIAL | 5 ms | HARDWARE | R-PDSO-G8 | Not Qualified | e4 | 1 | 85 °C | -40 °C | 260 | 40 | 8 | PLASTIC/EPOXY | TSSOP | TSSOP8,.25 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE, SHRINK PITCH | YES | Nickel/Palladium/Gold (Ni/Pd/Au) | GULL WING | 650 µm | DUAL | 1.2 mm | 4.4 mm | 3 mm | AT93C46E-TH-B | TSSOP-8 | compliant | Thailand | 3A991.A.2 | 8542.31.00.01 | 5.8 | [object Object] | ||||||||
5962-8606302XA
|
e2v technologies
|
查询价格和库存 |
|
No | No | Active | 262.144 kbit | 8 | 32KX8 | 5 V | 5 V | 250 ns | UVPROM | COMMON | 1 | 32000 | 32.768 k | ASYNCHRONOUS | 3-STATE | PARALLEL | 12.5 V | 300 µA | 50 µA | 5.5 V | 4.5 V | CMOS | MILITARY | R-GDIP-T28 | Qualified | e0 | 125 °C | -55 °C | 38535Q/M;38534H;883B | 28 | CERAMIC, GLASS-SEALED | DIP | DIP28,.6 | RECTANGULAR | IN-LINE | NO | TIN LEAD | THROUGH-HOLE | 2.54 mm | DUAL | DIP | DIP, DIP28,.6 | 28 | compliant | USA | EAR99 | 8542.32.00.61 | 4.25 | |||||||||||||||||||||
CAT24C128HU4IGT3
|
onsemi
|
查询价格和库存 |
|
Yes | Active | 131.072 kbit | 8 | 16KX8 | 3.3 V | 2/5 V | 1 MHz | EEPROM | 5MICROAMP STANDBY CURRENT AVAILABLE @ 12... more | 1 | 100 | 1000000 Write/Erase Cycles | 1 | 16000 | 16.384 k | SYNCHRONOUS | OPEN-DRAIN | SERIAL | 3.3 V | I2C | 2 µA | 3 µA | 5.5 V | 2.5 V | CMOS | INDUSTRIAL | 5 ms | HARDWARE | R-PDSO-N8 | Not Qualified | e4 | 1 | 85 °C | -40 °C | 260 | 30 | 8 | PLASTIC/EPOXY | HVSON | SOLCC8,.12,20 | RECTANGULAR | SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE | YES | NICKEL PALLADIUM GOLD | NO LEAD | 500 µm | DUAL | 550 µm | 3 mm | 2 mm | CAT24C128HU4IGT3 | , | 8 | 517AZ | compliant | Thailand | EAR99 | 8542.32.00.51 | 6.2 | [object Object] | |||||||||
CAT24C128YI-GT3
|
onsemi
|
查询价格和库存 |
|
Yes | Active | 131.072 kbit | 8 | 16KX8 | 3.3 V | 2/5 V | 1 MHz | EEPROM | 5MICROAMP STANDBY CURRENT AVAILABLE @ 12... more | 1 | 100 | 1000000 Write/Erase Cycles | 1 | 16000 | 16.384 k | SYNCHRONOUS | OPEN-DRAIN | SERIAL | 3.3 V | I2C | 2 µA | 3 µA | 5.5 V | 2.5 V | CMOS | INDUSTRIAL | 5 ms | HARDWARE | R-PDSO-G8 | Not Qualified | e4 | 1 | 85 °C | -40 °C | 260 | 30 | 8 | PLASTIC/EPOXY | TSSOP | TSSOP8,.25 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE, SHRINK PITCH | YES | NICKEL PALLADIUM GOLD | GULL WING | 650 µm | DUAL | 1.2 mm | 4.4 mm | 3 mm | CAT24C128YI-GT3 | TSSOP | , | 8 | 948AL | compliant | Thailand | EAR99 | 8542.32.00.51 | 6.4 | [object Object] | ||||||||
MX35LF1GE4AB-Z4I
|
Macronix International Co Ltd
|
查询价格和库存 |
|
Yes | Active | 1.0737 Gbit | 8 | 128MX8 | 3 V | 104 MHz | FLASH | 10 | 100000 Write/Erase Cycles | 1 | 128000000 | 134.2177 M | SYNCHRONOUS | 3-STATE | SERIAL | 3 V | SPI | 50 µA | 30 µA | 3.6 V | 2.7 V | CMOS | INDUSTRIAL | SLC NAND TYPE | HARDWARE | R-PDSO-N8 | 85 °C | -40 °C | NOT SPECIFIED | NOT SPECIFIED | 8 | PLASTIC/EPOXY | HVSON | SOLCC8,.3 | RECTANGULAR | SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE | YES | NO LEAD | 1.27 mm | DUAL | 800 µm | 8 mm | 6 mm | WSON-8 | unknown | Taiwan | EAR99 | 8542.32.00.51 | 4.4 | [object Object] | |||||||||||||||||||
MX25L25645GZ2I-08G
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Macronix International Co Ltd
|
查询价格和库存 |
|
Yes | Active | 268.4355 Mbit | 4 | 64MX4 | 3 V | 120 MHz | FLASH | ALSO IT CAN BE CONFIGURED AS 256M X 1 BIT | 2 | 1 | 64000000 | 67.1089 M | SYNCHRONOUS | SERIAL | 3 V | 3.6 V | 2.7 V | CMOS | INDUSTRIAL | R-PDSO-N8 | e3 | 85 °C | -40 °C | 8 | PLASTIC/EPOXY | HVSON | RECTANGULAR | SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE | YES | TIN | NO LEAD | 1.27 mm | DUAL | 800 µm | 8 mm | 6 mm | WSON-8 | unknown | Taiwan | EAR99 | 8542.32.00.51 | 7.41 | [object Object] | ||||||||||||||||||||||||||
MX25L25645GZNI-08G
|
Macronix International Co Ltd
|
查询价格和库存 |
|
Yes | Active | 268.4355 Mbit | 8 | 32MX8 | 3 V | 120 MHz | FLASH | ALSO IT CAN BE CONFIGURED AS 128K X 2 BIT | 4 | 20 | 1 | 32000000 | 33.5544 M | SYNCHRONOUS | 3-STATE | SERIAL | SPI | 100 µA | 30 µA | 3.6 V | 2.7 V | CMOS | INDUSTRIAL | NOR TYPE | HARDWARE/SOFTWARE | R-PDSO-N8 | 85 °C | -40 °C | NOT SPECIFIED | NOT SPECIFIED | 8 | PLASTIC/EPOXY | HVSON | SOLCC8,.19 | RECTANGULAR | SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE | YES | NO LEAD | 1.27 mm | DUAL | 800 µm | 6 mm | 5 mm | WSON-8 | unknown | Taiwan | EAR99 | 8542.32.00.51 | 6.2 | [object Object] | |||||||||||||||||||
MX25L25645GXDI-08G
|
Macronix International Co Ltd
|
查询价格和库存 |
|
Yes | Active | 268.4355 Mbit | 4 | 64MX4 | 3 V | 120 MHz | FLASH | ALSO IT CAN BE CONFIGURED AS 256M X 1 BIT | 2 | 1 | 64000000 | 67.1089 M | SYNCHRONOUS | SERIAL | 3 V | 3.6 V | 2.7 V | CMOS | INDUSTRIAL | R-PBGA-B24 | e1 | 85 °C | -40 °C | 24 | PLASTIC/EPOXY | TBGA | RECTANGULAR | GRID ARRAY, THIN PROFILE | YES | TIN SILVER COPPER | BALL | 1 mm | BOTTOM | 1.2 mm | 8 mm | 6 mm | BGA-24 | unknown | Taiwan | EAR99 | 8542.32.00.51 | 5.4 | [object Object] | ||||||||||||||||||||||||||
NTE2716
|
NTE Electronics Inc
|
查询价格和库存 |
|
Yes | Active | 16.384 kbit | 8 | 2KX8 | 5 V | 5 V | 350 ns | UVPROM | COMMON | 1 | 2000 | 2.048 k | ASYNCHRONOUS | 3-STATE | PARALLEL | 25 V | 160 µA | 5.25 V | 4.75 V | NMOS | COMMERCIAL | R-XDIP-T24 | Not Qualified | 70 °C | NOT SPECIFIED | NOT SPECIFIED | 24 | UNSPECIFIED | DIP | DIP24,.6 | RECTANGULAR | IN-LINE | NO | THROUGH-HOLE | 2.54 mm | DUAL | DIP | DIP, DIP24,.6 | 24 | unknown | EAR99 | 8542.32.00.61 | 3.8 | ||||||||||||||||||||||||||
NTE27C4001-12D
|
NTE Electronics Inc
|
查询价格和库存 |
|
Yes | Active | 4.1943 Mbit | 8 | 512KX8 | 5 V | 100 ns | UVPROM | LG-MAX; IT ALSO OPERATES FROM 4.75 TO 5.25 V SUPPLY VOLTAGE | 1 | 512000 | 524.288 k | ASYNCHRONOUS | PARALLEL | 5.5 V | 4.5 V | CMOS | COMMERCIAL | R-PDIP-T32 | 70 °C | NOT SPECIFIED | NOT SPECIFIED | 32 | PLASTIC/EPOXY | DIP | RECTANGULAR | IN-LINE | NO | THROUGH-HOLE | 2.54 mm | DUAL | 5.72 mm | 42.04 mm | 15.24 mm | DIP, | unknown | EAR99 | 8542.32.00.61 | 3.75 | |||||||||||||||||||||||||||||||
5962-8764801XA
|
e2v technologies
|
查询价格和库存 |
|
Active | 524.288 kbit | 8 | 64KX8 | 5 V | 5 V | 150 ns | UVPROM | COMMON | 1 | 64000 | 65.536 k | ASYNCHRONOUS | 3-STATE | PARALLEL | 325 µA | 60 µA | 5.5 V | 4.5 V | CMOS | MILITARY | R-GDIP-T28 | Not Qualified | e0 | 125 °C | -55 °C | 38535Q/M;38534H;883B | 28 | CERAMIC, GLASS-SEALED | DIP | DIP28,.6 | RECTANGULAR | IN-LINE | NO | TIN LEAD | THROUGH-HOLE | 2.54 mm | DUAL | DIP | DIP, DIP28,.6 | 28 | compliant | EAR99 | 8542.32.00.61 | 4.8 | |||||||||||||||||||||||||
5962-8680503QA
|
e2v technologies
|
查询价格和库存 |
|
Active | 1.0486 Mbit | 16 | 64KX16 | 5 V | 5 V | 90 ns | UVPROM | COMMON | 1 | 64000 | 65.536 k | ASYNCHRONOUS | 3-STATE | PARALLEL | 120 µA | 60 µA | 5.5 V | 4.5 V | CMOS | MILITARY | R-GDIP-T40 | Qualified | e0 | 125 °C | -55 °C | 38535Q/M;38534H;883B | 40 | CERAMIC, GLASS-SEALED | DIP | DIP40,.6 | RECTANGULAR | IN-LINE | NO | TIN LEAD | THROUGH-HOLE | 2.54 mm | DUAL | DIP | DIP, DIP40,.6 | 40 | compliant | USA | EAR99 | 8542.32.00.61 | 4.8 | ||||||||||||||||||||||||
5962-87515073A
|
e2v technologies
|
查询价格和库存 |
|
Active | 65.536 kbit | 8 | 8KX8 | 5 V | 5 V | 35 ns | UVPROM | COMMON | 1 | 8000 | 8.192 k | ASYNCHRONOUS | 3-STATE | PARALLEL | 30 mA | 120 µA | 5.5 V | 4.5 V | CMOS | MILITARY | S-CQCC-N28 | Qualified | e0 | 125 °C | -55 °C | 38535Q/M;38534H;883B | 28 | CERAMIC, METAL-SEALED COFIRED | QCCN | LCC28,.45SQ | SQUARE | CHIP CARRIER | YES | TIN LEAD | NO LEAD | 1.27 mm | QUAD | QLCC | CERAMIC, LCC-28 | 28 | compliant | USA | EAR99 | 8542.32.00.61 | 4.35 | ||||||||||||||||||||||||
5962-8751508LA
|
e2v technologies
|
查询价格和库存 |
|
Active | 65.536 kbit | 8 | 8KX8 | 5 V | 5 V | 35 ns | UVPROM | COMMON | 1 | 8000 | 8.192 k | ASYNCHRONOUS | 3-STATE | PARALLEL | 30 mA | 120 µA | 5.5 V | 4.5 V | CMOS | MILITARY | R-GDIP-T24 | Qualified | e0 | 125 °C | -55 °C | 38535Q/M;38534H;883B | 24 | CERAMIC, GLASS-SEALED | WDIP | DIP24,.3 | RECTANGULAR | IN-LINE, WINDOW | NO | TIN LEAD | THROUGH-HOLE | 2.54 mm | DUAL | 5.08 mm | 32.005 mm | 7.62 mm | WDIP, DIP24,.3 | compliant | USA | EAR99 | 8542.32.00.61 | 4.35 | |||||||||||||||||||||||
NTE2732A
|
NTE Electronics Inc
|
查询价格和库存 |
|
No | No | Active | 32.768 kbit | 8 | 4KX8 | 5 V | 5 V | 200 ns | UVPROM | COMMON | 1 | 4000 | 4.096 k | ASYNCHRONOUS | 3-STATE | PARALLEL | 21 V | 125 µA | 5.25 V | 4.75 V | NMOS | COMMERCIAL | R-XDIP-T24 | Not Qualified | e0 | 70 °C | 24 | UNSPECIFIED | DIP | DIP24,.6 | RECTANGULAR | IN-LINE | NO | TIN LEAD | THROUGH-HOLE | 2.54 mm | DUAL | compliant | EAR99 | 8542.32.00.61 | 3.65 |