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EPROM:

23,326 个筛选结果
EPROM由以色列工程师Dov Frohman发明,是一种断电后仍能保留数据的计算机储存芯片——即非易失性的(非挥发性)。它是一组浮栅晶体管,被一个提供比电子电路中常用电压更高电压的电子器件分别编程。一旦编程完成后,EPROM只能用强紫外线照射来擦除。通过封装顶部能看见硅片的透明窗口,很容易识别EPROM,这个窗口同时用来进行紫外线擦除。可以将EPROM的玻璃窗对准阳光直射一段时间就可以擦除。
最长访问时间 (50)
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最大时钟频率 (fCLK) (4)
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制造商 (50)
内存密度 (19)
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内存宽度 (4)
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组织 (34)
Most Relevant Technical Compliance Operating Conditions Physical Dimensions Other
制造商型号 制造商 数据手册 价格/库存
风险等级 是否无铅 是否Rohs认证
生命周期 内存密度 内存宽度 组织 标称供电电压 (Vsup)
电源
最长访问时间 最大时钟频率 (fCLK) 内存集成电路类型 其他特性 备用内存宽度 数据保留时间-最小值 耐久性 I/O 类型 I2C控制字节 功能数量 字数代码 字数 工作模式 输出特性 并行/串行 编程电压
串行总线类型
最大待机电流
最大压摆率
最大供电电压 (Vsup)
最小供电电压 (Vsup)
技术 温度等级
最长写入周期时间 (tWC)
写保护
JESD-30 代码 认证状态
JESD-609代码 湿度敏感等级 最高工作温度 最低工作温度 峰值回流温度(摄氏度) 筛选级别
处于峰值回流温度下的最长时间
端子数量 封装主体材料 封装代码 封装等效代码 封装形状 封装形式 表面贴装
端子面层
端子形式
端子节距
端子位置
座面最大高度
长度 宽度
零件包装代码
包装说明
针数
是否符合REACH标准
ECCN代码
HTS代码
Source Content uid
交付时间
制造商包装代码
5962-8606305YA
e2v technologies
查询价格和库存
Active 262.144 kbit 8 32KX8 5 V 5 V 150 ns UVPROM COMMON 1 32000 32.768 k ASYNCHRONOUS 3-STATE PARALLEL 12.5 V 300 µA 50 µA 5.5 V 4.5 V CMOS MILITARY R-CQCC-N32 Qualified e0 125 °C -55 °C 38535Q/M;38534H;883B 32 CERAMIC, METAL-SEALED COFIRED QCCN LCC32,.45X.55 RECTANGULAR CHIP CARRIER YES TIN LEAD NO LEAD 1.27 mm QUAD QFJ CERAMIC, LCC-32 32 compliant EAR99 8542.32.00.61
5962-8606304XA
e2v technologies
查询价格和库存
Active 262.144 kbit 8 32KX8 5 V 5 V 170 ns UVPROM COMMON 1 32000 32.768 k ASYNCHRONOUS 3-STATE PARALLEL 12.5 V 300 µA 50 µA 5.5 V 4.5 V CMOS MILITARY R-GDIP-T28 Qualified e0 125 °C -55 °C 38535Q/M;38534H;883B 28 CERAMIC, GLASS-SEALED DIP DIP28,.6 RECTANGULAR IN-LINE NO TIN LEAD THROUGH-HOLE 2.54 mm DUAL DIP CERAMIC, DIP-28 28 compliant EAR99 8542.32.00.61
QP7C271-45WC
e2v technologies
查询价格和库存
Active 262.144 kbit 8 32KX8 5 V 45 ns UVPROM 1 32000 32.768 k ASYNCHRONOUS PARALLEL 5.5 V 4.5 V CMOS COMMERCIAL R-GDIP-T28 70 °C 28 CERAMIC, GLASS-SEALED DIP RECTANGULAR IN-LINE NO THROUGH-HOLE DUAL DIP 0.300 INCH, CERAMIC, WINDOWED, DIP-28 28 compliant EAR99 8542.32.00.61
AT93C46DY6-YH-T
Microchip Technology Inc
查询价格和库存
Yes Yes Active 1.024 kbit 16 64X16 5 V 2/5 V 2 MHz EEPROM ALSO OPERATES AT 1MHZ AT 2.7MIN 8 100 1000000 Write/Erase Cycles SEPARATE 1 64 64 words SYNCHRONOUS SERIAL 5 V MICROWIRE 15 µA 2 µA 5.5 V 4.5 V CMOS INDUSTRIAL 5 ms SOFTWARE R-PDSO-G8 Not Qualified e4 1 85 °C -40 °C 260 40 8 PLASTIC/EPOXY HVSON SOLCC8,.11,20 RECTANGULAR SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE, SHRINK PITCH YES Nickel/Palladium/Gold (Ni/Pd/Au) NO LEAD 500 µm DUAL 600 µm 3 mm 2 mm UDFN-8 compliant 3A991.A.2 8542.31.00.01 AT93C46DY6-YH-T 8 weeks
AT93C46DY6-YH-E
Microchip Technology Inc
查询价格和库存
Yes Active 1.024 kbit 16 64X16 5 V 2 MHz EEPROM ALSO OPERATES AT 1MHZ AT 2.7MIN 8 100 1000000 Write/Erase Cycles SEPARATE 1 64 64 words SYNCHRONOUS SERIAL 5 V MICROWIRE 15 µA 2 µA 5.5 V 4.5 V CMOS INDUSTRIAL 5 ms SOFTWARE R-PDSO-G8 85 °C -40 °C 8 PLASTIC/EPOXY HVSON SOLCC8,.11,20 RECTANGULAR SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE, SHRINK PITCH YES NO LEAD 500 µm DUAL 600 µm 3 mm 2 mm UDFN-8 compliant EAR99 8542.32.00.51 AT93C46DY6-YH-E 8 weeks
5962-87515053A
e2v technologies
查询价格和库存
Active 65.536 kbit 8 8KX8 5 V 5 V 45 ns UVPROM POWER SWITCHED PROM COMMON 1 8000 8.192 k ASYNCHRONOUS 3-STATE PARALLEL 40 mA 120 µA 5.5 V 4.5 V CMOS MILITARY S-CQCC-N28 Qualified e0 125 °C -55 °C 38535Q/M;38534H;883B 28 CERAMIC, METAL-SEALED COFIRED WQCCN LCC28,.45SQ SQUARE CHIP CARRIER, WINDOW YES TIN LEAD NO LEAD 1.27 mm QUAD 2.8956 mm 11.43 mm 11.43 mm compliant EAR99 8542.32.00.61
CAT24C128HU4IGT3
onsemi
查询价格和库存
Yes Active 2/5 V 100 1000000 Write/Erase Cycles 1010DDDR I2C HARDWARE Not Qualified e4 1 NOT SPECIFIED NOT SPECIFIED Nickel/Palladium/Gold (Ni/Pd/Au) , 8 compliant EAR99 8542.32.00.51 CAT24C128HU4IGT3 4 weeks 517AZ
CAT24C128WI-GT3
onsemi
查询价格和库存
Yes Active 2/5 V 100 1000000 Write/Erase Cycles 1010DDDR I2C HARDWARE Not Qualified e4 1 260 40 Nickel/Palladium/Gold (Ni/Pd/Au) SOIC , 8 compliant EAR99 8542.32.00.51 CAT24C128WI-GT3 751BD
CAT24C128YI-GT3
onsemi
查询价格和库存
Yes Active 2/5 V 100 1000000 Write/Erase Cycles 1010DDDR I2C HARDWARE Not Qualified e4 1 260 40 Nickel/Palladium/Gold (Ni/Pd/Au) TSSOP , 8 compliant EAR99 8542.32.00.51 CAT24C128YI-GT3 8 weeks 948AL
MX25L25645GZ2I-08G
Macronix International Co Ltd
查询价格和库存
Yes Active NOT SPECIFIED NOT SPECIFIED WSON-8 unknown EAR99 8542.32.00.51 16 weeks
MX25L25645GZNI-08G
Macronix International Co Ltd
查询价格和库存
Yes Active NOT SPECIFIED NOT SPECIFIED WSON-8 unknown EAR99 8542.32.00.51 16 weeks
AT93C46EN-SH-T
Microchip Technology Inc
查询价格和库存
Yes Yes Active 1.024 kbit 16 64X16 5 V 2/5 V 2 MHz EEPROM ALSO OPERATES AT 1MHZ AT 2.7MIN 100 1000000 Write/Erase Cycles SEPARATE 1 64 64 words SYNCHRONOUS SERIAL 5 V MICROWIRE 15 µA 2 µA 5.5 V 4.5 V CMOS INDUSTRIAL 5 ms SOFTWARE R-PDSO-G8 Not Qualified e4 3 85 °C -40 °C 260 40 8 PLASTIC/EPOXY SOP SOP8,.25 RECTANGULAR SMALL OUTLINE YES Nickel/Palladium/Gold (Ni/Pd/Au) GULL WING 1.27 mm DUAL 1.75 mm 4.9 mm 3.9 mm SOIC-8 compliant 3A991.A.2 8542.31.00.01 AT93C46EN-SH-T 6 weeks
AT93C46E-TH-B
Microchip Technology Inc
查询价格和库存
Yes Yes Active 1.024 kbit 16 64X16 5 V 2/5 V 2 MHz EEPROM ALSO OPERATES AT 1MHZ AT 2.7MIN 100 1000000 Write/Erase Cycles SEPARATE 1 64 64 words SYNCHRONOUS SERIAL 5 V MICROWIRE 15 µA 2 µA 5.5 V 4.5 V CMOS INDUSTRIAL 5 ms SOFTWARE R-PDSO-G8 Not Qualified e4 1 85 °C -40 °C 260 40 8 PLASTIC/EPOXY TSOP1 TSSOP8,.25 RECTANGULAR SMALL OUTLINE, THIN PROFILE YES Nickel/Palladium/Gold (Ni/Pd/Au) GULL WING 650 µm DUAL 1.2 mm 4.4 mm 3 mm TSSOP-8 compliant 3A991.A.2 8542.31.00.01 AT93C46E-TH-B 7 weeks
AT93C46D-TH-T
Microchip Technology Inc
查询价格和库存
Yes Yes Active 1.024 kbit 16 64X16 5 V 2/5 V 2 MHz EEPROM ALSO OPERATES AT 1MHZ AT 2.7MIN 8 100 1000000 Write/Erase Cycles SEPARATE 1 64 64 words SYNCHRONOUS SERIAL 5 V MICROWIRE 15 µA 2 µA 5.5 V 4.5 V CMOS INDUSTRIAL 5 ms SOFTWARE R-PDSO-G8 Not Qualified e4 1 85 °C -40 °C 260 40 8 PLASTIC/EPOXY TSOP1 TSSOP8,.25 RECTANGULAR SMALL OUTLINE, THIN PROFILE YES Nickel/Palladium/Gold (Ni/Pd/Au) GULL WING 650 µm DUAL 1.2 mm 4.4 mm 3 mm TSSOP-8 compliant 3A991.A.2 8542.31.00.01 AT93C46D-TH-T 6 weeks
AT93C46DN-SH-B
Microchip Technology Inc
查询价格和库存
Yes Yes Active 1.024 kbit 16 64X16 5 V 2/5 V 2 MHz EEPROM ALSO OPERATES AT 1MHZ AT 2.7MIN 8 100 1000000 Write/Erase Cycles SEPARATE 1 64 64 words SYNCHRONOUS SERIAL 5 V MICROWIRE 15 µA 2 µA 5.5 V 4.5 V CMOS INDUSTRIAL 5 ms SOFTWARE R-PDSO-G8 Not Qualified e4 1 85 °C -40 °C 260 40 8 PLASTIC/EPOXY SOP SOP8,.25 RECTANGULAR SMALL OUTLINE YES Nickel/Palladium/Gold (Ni/Pd/Au) GULL WING 1.27 mm DUAL 1.75 mm 4.9 mm 3.9 mm SOIC-8 compliant 3A991.A.2 8542.31.00.01 AT93C46DN-SH-B 6 weeks
NTE2716
NTE Electronics Inc
查询价格和库存
Yes Active 16.384 kbit 8 2KX8 5 V 5 V 350 ns UVPROM COMMON 1 2000 2.048 k ASYNCHRONOUS 3-STATE PARALLEL 25 V 160 µA 5.25 V 4.75 V NMOS COMMERCIAL R-XDIP-T24 Not Qualified 70 °C NOT SPECIFIED NOT SPECIFIED 24 UNSPECIFIED DIP DIP24,.6 RECTANGULAR IN-LINE NO THROUGH-HOLE 2.54 mm DUAL DIP DIP, DIP24,.6 24 unknown EAR99 8542.32.00.61
5962-8606310UA
e2v technologies
查询价格和库存
Active 262.144 kbit 8 32KX8 5 V 5 V 45 ns UVPROM COMMON 1 32000 32.768 k ASYNCHRONOUS 3-STATE PARALLEL 12.5 V 45 mA 130 µA 5.5 V 4.5 V CMOS MILITARY R-GDIP-T28 Qualified e0 125 °C -55 °C 38535Q/M;38534H;883B 28 CERAMIC, GLASS-SEALED DIP DIP28,.3 RECTANGULAR IN-LINE NO TIN LEAD THROUGH-HOLE 2.54 mm DUAL DIP CERAMIC, DIP-28 28 compliant EAR99 8542.32.00.61
TMM27128AD-20
Toshiba America Electronic Components
查询价格和库存
No Active 131.072 kbit 8 16KX8 5 V 5 V 200 ns COMMON 16000 16.384 k 3-STATE 12.5 V MOS COMMERCIAL R-XDIP-T28 Not Qualified e0 70 °C 28 CERAMIC DIP DIP28,.6 RECTANGULAR IN-LINE NO Tin/Lead (Sn/Pb) THROUGH-HOLE 2.54 mm DUAL DIP, DIP28,.6 unknown EAR99 8542.32.00.61 TMM27128AD-20
5962-8751508LA
e2v technologies
查询价格和库存
Active 65.536 kbit 8 8KX8 5 V 5 V 35 ns UVPROM COMMON 1 8000 8.192 k ASYNCHRONOUS 3-STATE PARALLEL 30 mA 120 µA 5.5 V 4.5 V CMOS MILITARY R-GDIP-T24 Qualified e0 125 °C -55 °C 38535Q/M;38534H;883B 24 CERAMIC, GLASS-SEALED WDIP DIP24,.3 RECTANGULAR IN-LINE, WINDOW NO TIN LEAD THROUGH-HOLE 2.54 mm DUAL 5.08 mm 32.005 mm 7.62 mm WDIP, DIP24,.3 compliant EAR99 8542.32.00.61
5962-8680503QA
e2v technologies
查询价格和库存
Active 1.0486 Mbit 16 64KX16 5 V 5 V 90 ns UVPROM COMMON 1 64000 65.536 k ASYNCHRONOUS 3-STATE PARALLEL 120 µA 60 µA 5.5 V 4.5 V CMOS MILITARY R-GDIP-T40 Qualified e0 125 °C -55 °C 38535Q/M;38534H;883B 40 CERAMIC, GLASS-SEALED DIP DIP40,.6 RECTANGULAR IN-LINE NO TIN LEAD THROUGH-HOLE 2.54 mm DUAL DIP DIP, DIP40,.6 40 compliant EAR99 8542.32.00.61
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