功率双极晶体管:

所有筛选条件 其他特性 雪崩能效等级（Eas） 外壳连接 最大集电极电流 (IC) 基于收集器的最大容量 集电极-发射极最大电压 配置 最小直流电流增益 (hFE) 最小漏源击穿电压 最大漏极电流 (Abs) (ID) 最大漏极电流 (ID) 最大漏源导通电阻 FET 技术 最大降落时间（tf） 门极发射器阈值电压最大值 门极-发射极最大电压 JEDEC-95代码 JESD-30 代码 JESD-609代码 制造商 湿度敏感等级 元件数量 端子数量 工作模式 最高工作温度 最低工作温度 封装主体材料 封装形状 封装形式 生命周期 是否无铅 峰值回流温度（摄氏度） 极性/信道类型 功耗环境最大值 最大功率耗散 (Abs) 最大脉冲漏极电流 (IDM) 认证状态

BUILT IN BIAS RESISTANCE RATIO IS 0.015 39 BUILT IN BIAS RESISTANCE RATIO IS 0.02 6 BUILT IN BIAS RESISTANCE RATIO IS 0.033 14 BUILT IN BIAS RESISTANCE RATIO IS 0.037 5 BUILT IN BIAS RESISTANCE RATIO IS 0.04 4 BUILT IN BIAS RESISTANCE RATIO IS 0.05 8 BUILT IN BIAS RESISTANCE RATIO IS 0.057 4 BUILT IN BIAS RESISTANCE RATIO IS 0.06 55 BUILT IN BIAS RESISTANCE RATIO IS 0.067 8 BUILT IN BIAS RESISTANCE RATIO IS 0.075 9 BUILT IN BIAS RESISTANCE RATIO IS 0.08 8 BUILT IN BIAS RESISTANCE RATIO IS 0.11 6 BUILT IN BIAS RESISTANCE RATIO IS 0.167 4 BUILT IN BIAS RESISTANCE RATIO IS 50 12 BUILT IN BIAS RESISTOR 117 BUILT IN BIAS RESISTOR RATIO IS 0.03 419 BUILT IN BIAS RESISTOR RATIO IS 0.033 29 BUILT IN BIAS RESISTOR RATIO IS 0.2 7 BUILT IN BIAS RESISTORS 31 BUILT IN RESISTOR 16 BUILT-IN ANTISATURATION NETWORK 55 BUILT-IN BALLAST RESISTANCE 22 BUILT-IN BIAS RESISTOR 136 BUILT-IN BIAS RESISTOR RATIO IS 1 31 BUILT-IN BIAS RESISTOR RATIO IS 10 32 BUILT-IN BIAS RESISTOR RATIO IS 2.12 9 BUILT-IN BIAS RESISTOR RATIO IS 2.1277 6 BUILT-IN BIAS RESISTOR RATIO IS 4.54 10 BUILT-IN BIAS RESISTOR RATIO IS 4.5455 6 BUILT-IN BIAS RESISTORS 21 BUILT-IN EFFICIENT ANTISATURATION NETWORK 55 BULK; 500; TUBE: 50 8 CMOS COMPATIBLE 5 DIFFUSED BALLAST RESISTORS 9 FORMED LEAD OPTIONS ARE AVAILABLE 93 HIGH CURRENT DRIVER 39 HIGH RELIABILITY 5,070 HIGH RELIABILITY, LOGIC LEVEL COMPATIBLE 18 HIGH RELIABLITY 135 HIGH VOLTAGE 49 HOLLOW-EMITTER 50 HORIZONTAL DEFLECTION OUTPUT 13 LEADFORM OPTIONS ARE AVAILABLE 390 LOGIC LEVEL COMPATIBLE 394 LOW LEAKAGE 74 LOW NOISE 53 MULTIEPITAXIAL PLANAR 7 RING EMITTER TRANSISTOR 106 UL RECOGNIZED 66 VERY LOW LEAKAGE 35

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80.0 mJ 1

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BASE 2 COLLECTOR 42,518 EMITTER 78 ISOLATED 10,512

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最大集电极电流 (IC) (50)

50 mA 139 100 mA 1,181 140 mA 78 150 mA 82 200 mA 506 250 mA 58 300 mA 217 400 mA 68 500 mA 1,821 600 mA 401 700 mA 193 750 mA 139 800 mA 98 1 A 4,705 1.2 A 237 1.5 A 3,706 2 A 5,413 2.5 A 488 3 A 7,399 3.5 A 510 4 A 7,276 4.5 A 236 5 A 9,543 5.5 A 48 6 A 3,588 7 A 5,220 7.5 A 282 8 A 8,278 9 A 122 10 A 8,675 12 A 2,516 14 A 96 15 A 5,257 16 A 713 17 A 146 18 A 54 20 A 1,943 25 A 1,458 30 A 1,363 40 A 421 50 A 1,195 60 A 125 70 A 109 75 A 131 80 A 43 90 A 56 100 A 225 150 A 110 200 A 105 300 A 91

Min (A) - Max (A)

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2.5 pF 15 3 pF 84 4 pF 21 4.5 pF 32 5 pF 44 6 pF 61 7 pF 24 8 pF 72 8.5 pF 15 10 pF 107 12 pF 58 15 pF 125 18 pF 17 19 pF 16 20 pF 155 25 pF 133 30 pF 125 35 pF 19 40 pF 47 45 pF 175 50 pF 107 60 pF 161 65 pF 15 70 pF 57 75 pF 182 80 pF 50 90 pF 27 100 pF 792 110 pF 37 120 pF 76 125 pF 435 130 pF 308 150 pF 272 160 pF 20 170 pF 22 180 pF 15 200 pF 638 220 pF 135 230 pF 18 250 pF 868 270 pF 28 300 pF 524 350 pF 51 400 pF 145 450 pF 17 500 pF 135 600 pF 105 800 pF 24 1 nF 43 1.8 nF 23

Min (pF) - Max (pF)

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集电极-发射极最大电压 (50)

12 V 106 15 V 97 18 V 87 20 V 995 25 V 443 30 V 2,196 32 V 210 35 V 156 40 V 3,148 45 V 2,371 50 V 3,690 55 V 364 60 V 13,616 65 V 90 70 V 644 75 V 215 80 V 13,908 85 V 107 90 V 637 95 V 175 100 V 8,753 110 V 291 120 V 2,997 125 V 492 130 V 145 140 V 1,091 150 V 1,910 160 V 1,070 175 V 90 180 V 455 200 V 2,178 225 V 218 230 V 233 250 V 1,505 275 V 228 300 V 3,017 325 V 292 350 V 1,121 375 V 107 400 V 7,058 450 V 1,548 500 V 1,617 550 V 132 600 V 545 700 V 418 750 V 123 800 V 2,298 900 V 163 1 kV 80 1.2 kV 101

Min (V) - Max (V)

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配置 (50)

2 BANKS, COMMON COLLECTOR, 2 ELEMENTS 2 2 BANKS, COMMON COLLECTOR, 2 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR 6 2 BANKS, COMMON EMITTER, 2 ELEMENTS 60 2 BANKS, COMMON EMITTER, 2 ELEMENTS WITH BUILT-IN DIODE 2 2 BANKS, COMMON EMITTER, 2 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR 18 2 BANKS, DARLINGTON 39 2 BANKS, DARLINGTON WITH BUILT-IN DIODE AND RESISTOR 30 2 BANKS, DARLINGTON, 3 TRANSISTORS WITH BUILT-IN DIODE AND RESISTOR 6 2 BANKS, DARLINGTON, 4 TRANSISTORS WITH BUILT-IN DIODE AND RESISTOR 1 3 BANKS, DARLINGTON 3 3 BANKS, DARLINGTON WITH BUILT-IN DIODE AND RESISTOR 2 4 BANKS, DARLINGTON 1 4 BANKS, DARLINGTON WITH BUILT-IN DIODE AND RESISTOR 66 4 BANKS, DARLINGTON WITH BUILT-IN RESISTOR 24 5 BANKS, DARLINGTON WITH BUILT-IN DIODE AND RESISTOR 1 6 BANKS, DARLINGTON 1 7 BANKS, DARLINGTON WITH BUILT-IN DIODE 3 7 BANKS, DARLINGTON WITH BUILT-IN DIODE AND RESISTOR 61 8 BANKS, DARLINGTON WITH BUILT-IN DIODE AND RESISTOR 192 BRIDGE, 4 ELEMENTS 8 COMMON COLLECTOR, 2 ELEMENTS 4 COMMON COLLECTOR, 3 ELEMENTS 1 COMMON COLLECTOR, 3 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR 27 COMMON EMITTER, 2 ELEMENTS 10 COMMON EMITTER, 2 ELEMENTS WITH BUILT-IN RESISTOR 1 COMMON EMITTER, 3 ELEMENTS 35 COMMON EMITTER, 3 ELEMENTS WITH BUILT-IN DIODE 3 COMMON EMITTER, 3 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR 13 COMMON EMITTER, 4 ELEMENTS 40 COMMON EMITTER, 4 ELEMENTS WITH BUILT-IN DIODE 6 COMMON EMITTER, 4 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR 19 COMPLEX 1,334 DARLINGTON 6,355 DARLINGTON WITH BUILT-IN DIODE 194 DARLINGTON WITH BUILT-IN DIODE AND RESISTOR 5,600 DARLINGTON WITH BUILT-IN RESISTOR 866 DARLINGTON, 3 TRANSISTORS WITH BUILT-IN DIODE AND RESISTOR 78 DARLINGTON, 4 TRANSISTORS WITH BUILT-IN DIODE AND RESISTOR 8 SEPARATE, 2 ELEMENTS 354 SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE 17 SEPARATE, 4 ELEMENTS 291 SEPARATE, 4 ELEMENTS WITH BUILT-IN DIODE 2 SEPARATE, 4 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR 3 SEPARATE, 5 ELEMENTS 3 Single 2,712 SINGLE 66,405 SINGLE WITH BUILT-IN DIODE 918 SINGLE WITH BUILT-IN DIODE AND RESISTOR 411 SINGLE WITH BUILT-IN FET AND DIODE 39 SINGLE WITH BUILT-IN RESISTOR 290

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最小直流电流增益 (hFE) (50)

2.0 232 2.3 349 3.0 192 4.0 710 5.0 3,385 6.0 818 7.0 676 7.5 171 8.0 2,469 9.0 177 10.0 6,650 12.0 917 14.0 375 15.0 7,339 20.0 9,425 21.0 156 25.0 3,515 26.0 196 30.0 4,965 31.0 142 35.0 605 36.0 142 40.0 5,644 45.0 151 50.0 1,975 55.0 183 60.0 2,825 63.0 433 70.0 2,634 75.0 576 80.0 566 82.0 254 90.0 505 100.0 6,294 120.0 735 130.0 169 140.0 1,000 150.0 554 160.0 909 180.0 179 200.0 1,459 250.0 334 300.0 239 500.0 1,362 750.0 3,375 1000.0 4,330 1500.0 401 2000.0 1,351 4000.0 198 5000.0 373

Min - Max

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20 V 1 30 V 1

Min (V) - Max (V)

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12 A 2 50 A 1 53 A 1

Min (A) - Max (A)

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30 mA 1 4.1 A 1 12 A 2 30 A 1

Min (A) - Max (A)

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4 mΩ 1 52 mΩ 1

Min (Ω) - Max (Ω)

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JUNCTION 4 METAL-OXIDE SEMICONDUCTOR 5

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0.3 ps 2 50 ns 12 62 ns 1 100 ns 5 150 ns 3 200 ns 39 220 ns 2 250 ns 123 280 ns 1 300 ns 112 350 ns 10 400 ns 79 440 ns 2 500 ns 292 550 ns 2 600 ns 41 700 ns 109 750 ns 7 800 ns 199 900 ns 22 1 µs 130 1.1 µs 3 1.2 µs 14 1.4 µs 2 1.5 µs 26 1.7 µs 3 1.8 µs 2 2 µs 150 2.4 µs 2 2.5 µs 14 3 µs 450 3.5 µs 3 4 µs 40 4.45 µs 1 5 µs 60 6 µs 4 7 µs 20 9 µs 1 11 µs 1 15 µs 2 18 µs 1 35 µs 1 800 ms 1

Min (ns) - Max (ns)

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3.9 V 3

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20 V 3

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MO-235 56 TO-111 340 TO-114 124 TO-116 116 TO-126 4,578 TO-202 299 TO-202AB 494 TO-204 87 TO-204AA 4,849 TO-204AE 942 TO-205AA 48 TO-205AD 639 TO-213 84 TO-213AA 1,559 TO-218 2,270 TO-220 124 TO-220AA 84 TO-220AB 26,882 TO-225 51 TO-225AA 401 TO-237AA 44 TO-243 58 TO-243AA 92 TO-247 507 TO-247AE 34 TO-251 474 TO-252 738 TO-252AA 116 TO-254AA 477 TO-257 191 TO-257AA 124 TO-257AB 136 TO-261 37 TO-261AA 176 TO-263AB 121 TO-264AA 101 TO-276AA 636 TO-276AB 1,078 TO-3 5,330 TO-36 61 TO-39 604 TO-46 51 TO-5 938 TO-53 38 TO-59 412 TO-61 613 TO-63 524 TO-66 1,581 TO-8 237 TO-92 872

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O-MBCY-W3 2,688 O-MBFM-P2 15,407 O-MBFM-X3 110 O-MBPM-D2 151 O-MUPM-D3 1,398 O-MUPM-D4 144 O-MUPM-X3 592 O-MUPM-X4 56 O-PBCY-T3 727 O-PBCY-W3 190 R-CBCC-N3 2,114 R-CDIP-T16 64 R-CDIP-T18 112 R-CSSO-G2 74 R-GDIP-T16 55 R-GDIP-T18 55 R-MSFM-P3 157 R-MSFM-T3 142 R-PDIP-T14 212 R-PDIP-T16 199 R-PDIP-T18 115 R-PDSO-F8 58 R-PDSO-G16 110 R-PDSO-G2 79 R-PDSO-G3 287 R-PDSO-G4 2,520 R-PDSO-G6 109 R-PDSO-G8 281 R-PSFM-T12 82 R-PSFM-T2 146 R-PSFM-T3 46,679 R-PSFM-T4 53 R-PSFM-T5 55 R-PSIP-T10 383 R-PSIP-T12 66 R-PSIP-T3 2,540 R-PSIP-T8 164 R-PSIP-W3 210 R-PSSO-F3 1,529 R-PSSO-G2 2,878 R-PSSO-G3 166 R-PSSO-G4 56 R-PUFM-X5 100 R-PUFM-X7 95 R-XBCC-N3 100 R-XSFM-P3 178 S-CQCC-N20 79 S-MSFM-P3 287 S-XSFM-P3 338 S-XUUC-N2 182

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e0 14,898 e1 3,480 e2 331 e3 6,786 e3/e1 3 e3/e2 11 e3/e6 3 e4 1,039 e6 144

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制造商 (50)

Advanced Semiconductor Inc 306 Allegro MicroSystems LLC 807 API Technologies Corp 771 Baneasa SA 450 Bourns Inc 464 Central Semiconductor Corp 3,349 Continental Device India Ltd 1,227 Crimson Semiconductor Inc 567 Defense Logistics Agency 705 Defense Supply Center Columbus 668 Diodes Incorporated 1,189 Fairchild Semiconductor Corporation 2,543 Harris Semiconductor 4,116 Hitachi Ltd 381 Inchange Semiconductor Company Ltd 1,813 Intersil Corporation 3,990 JW Miller 323 KEC 500 Micro Commercial Components 569 Microsemi Corporation 1,999 Motorola Mobility LLC 4,078 Motorola Semiconductor Products 4,102 NEC Electronics America Inc 528 NEC Electronics Group 977 New Jersey Semiconductor Products Inc 2,402 NTE Electronics Inc 518 NXP Semiconductors 1,059 onsemi 4,399 Panasonic Electronic Components 2,497 Power Innovations International, Inc. 323 Powerex Power Semiconductors 341 Renesas Electronics Corporation 1,320 Rochester Electronics LLC 781 ROHM Semiconductor 2,780 Samsung Semiconductor 762 Sanken Electric Co Ltd 666 SANYO Electric Co Ltd 5,777 SANYO Semiconductor Co Ltd 3,410 Shindengen Electronic Manufacturing Co Ltd 448 Silicon Transistor Corporation 710 Solid State Devices Inc (SSDI) 1,443 Solitron Devices Inc 1,302 STMicroelectronics 1,573 Texas Instruments 625 Toshiba America Electronic Components 1,307 TT Electronics Power and Hybrid / Semelab Limited 5,798 TT Electronics Resistors 5,811 Unisonic Technologies Co Ltd 4,094 VPT Components 339 Zetex / Diodes Inc 1,049

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1 3,768 2 127 3 9 NOT APPLICABLE 234 NOT SPECIFIED 338

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元件数量 (8)

1 82,823 2 712 3 244 4 892 5 23 6 159 7 347 8 371

Min - Max

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端子数量 (21)

1 1 10 399 11 62 12 150 13 1 14 318 15 87 16 430 17 47 18 324 19 18 2 19,032 20 86 28 12 3 61,051 4 3,022 5 222 6 215 7 113 8 576 9 28

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DEPLETION MODE 1 ENHANCEMENT MODE 5

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-888.0 °C 7 50.0 °C 4 70.0 °C 9 75.0 °C 8 85.0 °C 104 90.0 °C 4 95.0 °C 101 100.0 °C 269 105.0 °C 16 110.0 °C 74 115.0 °C 21 120.0 °C 1 125.0 °C 122 130.0 °C 5 135.0 °C 13 140.0 °C 1,028 150.0 °C 35,442 165.0 °C 1 175.0 °C 3,239 180.0 °C 2 200.0 °C 6,967

Min (°C) - Max (°C)

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-65.0 °C 2,493 -55.0 °C 383 -50.0 °C 6 -40.0 °C 10 -20.0 °C 13 0.0 °C 11

Min (°C) - Max (°C)

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CERAMIC, GLASS-SEALED 206 CERAMIC, METAL-SEALED COFIRED 2,644 GLASS 1 METAL 21,394 PLASTIC/EPOXY 60,726 UNSPECIFIED 1,267

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RECTANGULAR 63,279 ROUND 21,900 SQUARE 1,019 UNSPECIFIED 30

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CHIP CARRIER 2,349 CYLINDRICAL 3,675 DISK BUTTON 36 FLANGE MOUNT 64,602 FLATPACK 17 GRID ARRAY 2 IN-LINE 4,293 POST/STUD MOUNT 2,537 SMALL OUTLINE 8,409 SPECIAL SHAPE 1 UNCASED CHIP 308

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Active 27,621 Contact Manufacturer 6,184 End Of Life 321 Lifetime Buy 144 Not Recommended 650 Obsolete 49,882 Transferred 10,181 Unknown 40

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No 8,774 Yes 6,148

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225 173 235 118 240 705 245 58 250 2 260 3,571 265 60 NOT APPLICABLE 403 NOT SPECIFIED 30,693

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极性/信道类型 (6)

N-CHANNEL 6 NPN 58,555 NPN AND PNP 358 NPN/PNP 1 P-CHANNEL 3 PNP 28,454

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1.1 W 136 1.2 W 60 1.25 W 131 1.3 W 103 1.5 W 396 1.75 W 74 2 W 605 2.75 W 78 3 W 202 3.5 W 65 5 W 131 6.25 W 131 7 W 130 8 W 141 9 W 85 10 W 540 12.5 W 281 15 W 329 20 W 558 25 W 552 30 W 3,042 31.2 W 116 31.25 W 87 35 W 372 40 W 3,465 45 W 213 50 W 3,207 52 W 96 55 W 107 60 W 977 62.5 W 114 65 W 2,152 70 W 1,149 75 W 1,027 80 W 1,468 83 W 294 85 W 260 90 W 343 100 W 1,105 115 W 63 117 W 64 120 W 189 125 W 343 140 W 96 150 W 581 160 W 73 175 W 231 200 W 324 250 W 174 350 W 92

Min (W) - Max (W)

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1 W 121 1.1 W 87 1.2 W 388 1.3 W 504 1.5 W 776 1.8 W 119 2 W 1,434 2.5 W 118 3 W 251 3.5 W 117 4 W 88 5 W 333 7 W 219 8 W 161 10 W 854 12.5 W 148 13 W 122 15 W 905 20 W 1,414 25 W 1,350 30 W 2,072 35 W 456 36 W 155 40 W 2,148 45 W 187 50 W 1,234 52 W 97 60 W 580 65 W 474 70 W 395 75 W 521 80 W 904 85 W 105 87 W 130 90 W 265 100 W 1,008 115 W 94 117 W 138 120 W 230 125 W 578 130 W 84 140 W 108 150 W 1,249 160 W 214 175 W 340 180 W 90 200 W 777 250 W 358 300 W 206 350 W 143

Min (W) - Max (W)

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20 A 1 70 A 1

Min (A) - Max (A)

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COMMERCIAL 747 MILITARY 2 Not Qualified 74,537 Qualified 1,591

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