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DRAM: 266,851 个筛选结果
访问模式 (18)
最长访问时间 (50)
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最大时钟频率 (fCLK) (50)
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制造商 (50)
内存密度 (50)
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内存宽度 (26)
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组织 (50)
Most Relevant Technical Compliance Operating Conditions Physical Dimensions Other
制造商型号 Composite Price
风险等级 是否无铅 是否Rohs认证
生命周期 内存密度 内存宽度 组织 标称供电电压 (Vsup)
电源
最长访问时间 最大时钟频率 (fCLK) 刷新周期
访问模式 内存集成电路类型 其他特性 I/O 类型 交错的突发长度 功能数量 端口数量 字数代码 字数 工作模式 输出特性 反向引出线
自我刷新
连续突发长度
最大待机电流
最大压摆率
最大供电电压 (Vsup)
最小供电电压 (Vsup)
技术 温度等级
JESD-30 代码 认证状态
JESD-609代码 湿度敏感等级 最高工作温度 最低工作温度 峰值回流温度(摄氏度) 处于峰值回流温度下的最长时间
端子数量 封装主体材料 封装代码 封装等效代码 封装形状 封装形式 表面贴装
端子面层
端子形式
端子节距
端子位置
座面最大高度
长度 宽度
零件包装代码
包装说明
针数
是否符合REACH标准
ECCN代码
HTS代码
交付时间
Samacsys Manufacturer
MT41K256M8DA-125:K
Micron Technology Inc
查询价格
Yes Active 2.1475 Gbit 8 256MX8 1.35 V 1.35 V 225 ps 800 MHz 8192 MULTI BANK PAGE BURST DDR DRAM AUTO/SELF REFRESH COMMON 8 1 1 256000000 268.4355 M SYNCHRONOUS 3-STATE YES 8 12 mA 156 µA 1.45 V 1.283 V CMOS OTHER R-PBGA-B78 Not Qualified e1 3 95 °C 260 30 78 PLASTIC/EPOXY TFBGA BGA78,9X13,32 RECTANGULAR GRID ARRAY, THIN PROFILE, FINE PITCH YES Tin/Silver/Copper (Sn96.5Ag3.0Cu0.5) BALL 800 µm BOTTOM 1.2 mm 10.5 mm 8 mm BGA TFBGA, BGA78,9X13,32 78 not_compliant EAR99 8542.32.00.36 16 weeks Micron
IS43DR16640C-25DBL
Integrated Silicon Solution Inc
查询价格
Yes Active 1.0737 Gbit 16 64MX16 1.8 V 1.8 V 400 ps 400 MHz 8192 MULTI BANK PAGE BURST DDR DRAM AUTO/SELF REFRESH COMMON 4,8 1 1 64000000 67.1089 M SYNCHRONOUS 3-STATE YES 4,8 25 mA 280 µA 1.9 V 1.7 V CMOS OTHER R-PBGA-B84 Not Qualified e1 3 85 °C 260 10 84 PLASTIC/EPOXY TFBGA BGA84,9X15,32 RECTANGULAR GRID ARRAY, THIN PROFILE, FINE PITCH YES Tin/Silver/Copper (Sn/Ag/Cu) BALL 800 µm BOTTOM 1.2 mm 12.5 mm 8 mm TFBGA, BGA84,9X15,32 compliant EAR99 8542.32.00.32 6 weeks
IS42S32200L-7TL
Integrated Silicon Solution Inc
查询价格
Yes Active 67.1089 Mbit 32 2MX32 3.3 V 3.3 V 5.4 ns 143 MHz 4096 FOUR BANK PAGE BURST SYNCHRONOUS DRAM AUTO/SELF REFRESH COMMON 1,2,4,8 1 1 2000000 2.0972 M SYNCHRONOUS 3-STATE YES 1,2,4,8,FP 2 mA 90 µA 3.6 V 3 V CMOS COMMERCIAL R-PDSO-G86 Not Qualified 70 °C 86 PLASTIC/EPOXY TSOP2 TSSOP86,.46,20 RECTANGULAR SMALL OUTLINE, THIN PROFILE YES GULL WING 500 µm DUAL 1.2 mm 22.22 mm 10.16 mm TSOP2 TSOP2, TSSOP86,.46,20 86 compliant EAR99 8542.32.00.02 6 weeks
MT41K64M16TW-107:J
Micron Technology Inc
查询价格
Yes Active 1.0737 Gbit 16 64MX16 1.35 V 1.35 V 195 ps 933 MHz 8192 MULTI BANK PAGE BURST DDR DRAM AUTO/SELF REFRESH COMMON 8 1 1 64000000 67.1089 M SYNCHRONOUS 3-STATE YES 8 12 mA 219 µA 1.45 V 1.283 V CMOS R-PBGA-B96 Not Qualified NOT SPECIFIED NOT SPECIFIED 96 PLASTIC/EPOXY TFBGA BGA96,9X16,32 RECTANGULAR GRID ARRAY, THIN PROFILE, FINE PITCH YES BALL 800 µm BOTTOM 1.2 mm 14 mm 8 mm TFBGA, BGA96,9X16,32 compliant EAR99 8542.32.00.32 3 weeks Micron
MT47H128M16RT-25E:C
Micron Technology Inc
查询价格
Yes Yes Active 2.1475 Gbit 16 128MX16 1.8 V 1.8 V 400 ps 400 MHz 8192 MULTI BANK PAGE BURST DDR DRAM AUTO/SELF REFRESH COMMON 4,8 1 1 128000000 134.2177 M SYNCHRONOUS 3-STATE YES 4,8 12 mA 330 µA 1.9 V 1.7 V CMOS OTHER R-PBGA-B84 Not Qualified e1 85 °C 260 30 84 PLASTIC/EPOXY TFBGA BGA84,9X15,32 RECTANGULAR GRID ARRAY, THIN PROFILE, FINE PITCH YES Tin/Silver/Copper (Sn96.5Ag3.0Cu0.5) BALL 800 µm BOTTOM 1.2 mm 12.5 mm 9 mm BGA TFBGA, BGA84,9X15,32 84 compliant EAR99 8542.32.00.36 16 weeks Micron
MT48LC8M16A2P-6A:L
Micron Technology Inc
查询价格
Yes Active 134.2177 Mbit 16 8MX16 3.3 V 3.3 V 5.4 ns 167 MHz 4096 FOUR BANK PAGE BURST SYNCHRONOUS DRAM AUTO/SELF REFRESH COMMON 1,2,4,8 1 1 8000000 8.3886 M SYNCHRONOUS 3-STATE YES 1,2,4,8,FP 2.5 mA 100 µA 3.6 V 3 V CMOS COMMERCIAL R-PDSO-G54 Not Qualified e3 70 °C 260 30 54 PLASTIC/EPOXY TSOP2 TSOP54,.46,32 RECTANGULAR SMALL OUTLINE, THIN PROFILE YES Matte Tin (Sn) GULL WING 800 µm DUAL 1.2 mm 22.22 mm 10.16 mm TSOP2 TSOP2, TSOP54,.46,32 54 compliant EAR99 8542.32.00.02 7 weeks
MT41K512M8DA-107:P
Micron Technology Inc
查询价格
Yes Active 4.295 Gbit 8 512MX8 1.35 V MULTI BANK PAGE BURST DDR DRAM AUTO/SELF REFRESH 1 1 512000000 536.8709 M SYNCHRONOUS YES 1.45 V 1.283 V CMOS OTHER R-PBGA-B78 85 °C NOT SPECIFIED NOT SPECIFIED 78 PLASTIC/EPOXY TFBGA RECTANGULAR GRID ARRAY, THIN PROFILE, FINE PITCH YES BALL 800 µm BOTTOM 1.2 mm 10.5 mm 8 mm TFBGA, compliant EAR99 8542.32.00.36 16 weeks
MT47H256M8EB-25E:C
Micron Technology Inc
查询价格
Yes Yes Active 2.1475 Gbit 8 256MX8 1.8 V 1.8 V 400 ps 400 MHz 8192 MULTI BANK PAGE BURST DDR DRAM AUTO/SELF REFRESH COMMON 4,8 1 1 256000000 268.4355 M SYNCHRONOUS 3-STATE YES 4,8 12 mA 250 µA 1.9 V 1.7 V CMOS OTHER R-PBGA-B60 Not Qualified e1 85 °C 260 30 60 PLASTIC/EPOXY TFBGA BGA60,9X11,32 RECTANGULAR GRID ARRAY, THIN PROFILE, FINE PITCH YES Tin/Silver/Copper (Sn96.5Ag3.0Cu0.5) BALL 800 µm BOTTOM 1.2 mm 11.5 mm 9 mm BGA TFBGA, BGA60,9X11,32 60 compliant EAR99 8542.32.00.36 16 weeks Micron
IS42S16400J-7TLI
Integrated Silicon Solution Inc
查询价格
Yes Active 67.1089 Mbit 16 4MX16 3.3 V 5.4 ns 143 MHz 4096 FOUR BANK PAGE BURST SYNCHRONOUS DRAM AUTO/SELF REFRESH COMMON 1,2,4,8 1 1 4000000 4.1943 M SYNCHRONOUS 3-STATE NO YES 1,2,4,8,FP 70 µA 3.6 V 3 V CMOS INDUSTRIAL R-PDSO-G54 Not Qualified e3 85 °C -40 °C 54 PLASTIC/EPOXY TSOP2 TSOP54,.46,32 RECTANGULAR SMALL OUTLINE, THIN PROFILE YES Matte Tin (Sn) - annealed GULL WING 800 µm DUAL 1.2 mm 22.22 mm 10.16 mm TSOP2 TSOP2, TSOP54,.46,32 54 compliant EAR99 8542.32.00.02 6 weeks Integrated Silicon Solution Inc.
AS4C64M16D2A-25BIN
Alliance Memory Inc
查询价格
Yes Active 1.0737 Gbit 16 64MX16 1.8 V MULTI BANK PAGE BURST DDR DRAM AUTO/SELF REFRESH 1 1 64000000 67.1089 M SYNCHRONOUS YES 1.9 V 1.7 V CMOS OTHER R-PBGA-B84 e1 3 85 °C 265 20 84 PLASTIC/EPOXY TFBGA RECTANGULAR GRID ARRAY, THIN PROFILE, FINE PITCH YES Tin/Silver/Copper (Sn96.5Ag3.0Cu0.5) BALL 800 µm BOTTOM 1.2 mm 12.5 mm 8 mm TFBGA, compliant EAR99 8542.32.00.32 8 weeks
IS42S16800F-7TL
Integrated Silicon Solution Inc
查询价格
Yes Yes Active 134.2177 Mbit 16 8MX16 3.3 V 3.3 V 5.4 ns 143 MHz 4096 FOUR BANK PAGE BURST SYNCHRONOUS DRAM AUTO/SELF REFRESH COMMON 1,2,4,8 1 1 8000000 8.3886 M SYNCHRONOUS 3-STATE YES 1,2,4,8,FP 2 mA 100 µA 3.6 V 3 V CMOS COMMERCIAL R-PDSO-G54 Not Qualified e3 3 70 °C 260 10 54 PLASTIC/EPOXY TSOP2 TSOP54,.46,32 RECTANGULAR SMALL OUTLINE, THIN PROFILE YES Matte Tin (Sn) GULL WING 800 µm DUAL 1.2 mm 22.22 mm 10.16 mm TSOP2 TSOP2, TSOP54,.46,32 54 compliant EAR99 8542.32.00.02 6 weeks Integrated Silicon Solution Inc.
AS4C32M16D2A-25BAN
Alliance Memory Inc
查询价格
Yes Active 536.8709 Mbit 16 32MX16 1.8 V 400 ps FOUR BANK PAGE BURST SYNCHRONOUS DRAM AUTO/SELF REFRESH 1 1 32000000 33.5544 M SYNCHRONOUS YES 1.9 V 1.7 V CMOS OTHER R-PBGA-B84 3 85 °C NOT SPECIFIED NOT SPECIFIED 84 PLASTIC/EPOXY TFBGA RECTANGULAR GRID ARRAY, THIN PROFILE, FINE PITCH YES BALL 800 µm BOTTOM 1.2 mm 12.5 mm 8 mm TFBGA, compliant EAR99 8542.32.00.28 8 weeks
IS42S16800F-7TLI
Integrated Silicon Solution Inc
查询价格
Yes Active 134.2177 Mbit 16 8MX16 3.3 V 3.3 V 5.4 ns 143 MHz 4096 FOUR BANK PAGE BURST SYNCHRONOUS DRAM AUTO/SELF REFRESH COMMON 1,2,4,8 1 1 8000000 8.3886 M SYNCHRONOUS 3-STATE YES 1,2,4,8,FP 2 mA 100 µA 3.6 V 3 V CMOS INDUSTRIAL R-PDSO-G54 Not Qualified e3 3 85 °C -40 °C 260 10 54 PLASTIC/EPOXY TSOP2 TSOP54,.46,32 RECTANGULAR SMALL OUTLINE, THIN PROFILE YES Matte Tin (Sn) - annealed GULL WING 800 µm DUAL 1.2 mm 22.22 mm 10.16 mm TSOP2 TSOP2, TSOP54,.46,32 54 compliant EAR99 8542.32.00.02 6 weeks
AS4C32M16D2A-25BCN
Alliance Memory Inc
查询价格
Yes Active 536.8709 Mbit 16 32MX16 1.8 V 400 ps FOUR BANK PAGE BURST SYNCHRONOUS DRAM AUTO/SELF REFRESH 1 1 32000000 33.5544 M SYNCHRONOUS YES 1.9 V 1.7 V CMOS OTHER R-PBGA-B84 85 °C NOT SPECIFIED NOT SPECIFIED 84 PLASTIC/EPOXY TFBGA RECTANGULAR GRID ARRAY, THIN PROFILE, FINE PITCH YES BALL 800 µm BOTTOM 1.2 mm 12.5 mm 8 mm TFBGA, compliant EAR99 8542.32.00.28 8 weeks
AS4C64M16D2A-25BCN
Alliance Memory Inc
查询价格
Yes Active 1.0737 Gbit 16 64MX16 1.8 V MULTI BANK PAGE BURST DDR DRAM AUTO/SELF REFRESH 1 1 64000000 67.1089 M SYNCHRONOUS YES 1.9 V 1.7 V CMOS INDUSTRIAL R-PBGA-B84 e1 3 85 °C -40 °C NOT SPECIFIED NOT SPECIFIED 84 PLASTIC/EPOXY TFBGA RECTANGULAR GRID ARRAY, THIN PROFILE, FINE PITCH YES Tin/Silver/Copper (Sn96.5Ag3.0Cu0.5) BALL 800 µm BOTTOM 1.2 mm 12.5 mm 8 mm TFBGA, compliant EAR99 8542.32.00.32 8 weeks
W9725G6KB-25
Winbond Electronics Corp
查询价格
Yes Active 268.4355 Mbit 16 16MX16 1.8 V 1.8 V 400 ps 400 MHz 8192 FOUR BANK PAGE BURST DDR DRAM AUTO/SELF REFRESH COMMON 4,8 1 1 16000000 16.7772 M SYNCHRONOUS 3-STATE YES 4,8 6 mA 135 µA 1.9 V 1.7 V CMOS OTHER R-PBGA-B84 Not Qualified 85 °C NOT SPECIFIED NOT SPECIFIED 84 PLASTIC/EPOXY TFBGA BGA84,9X15,32 RECTANGULAR GRID ARRAY, THIN PROFILE, FINE PITCH YES BALL 800 µm BOTTOM 1.2 mm 12.5 mm 8 mm BGA TFBGA, BGA84,9X15,32 84 compliant EAR99 8542.32.00.24
MT48LC16M16A2P-6A:G
Micron Technology Inc
查询价格
Yes Yes Active 268.4355 Mbit 16 16MX16 3.3 V 3.3 V 5.4 ns 167 MHz 8192 FOUR BANK PAGE BURST SYNCHRONOUS DRAM AUTO/SELF REFRESH COMMON 1,2,4,8 1 1 16000000 16.7772 M SYNCHRONOUS 3-STATE YES 1,2,4,8,FP 2.5 mA 150 µA 3.6 V 3 V CMOS COMMERCIAL R-PDSO-G54 Not Qualified e3 70 °C 260 30 54 PLASTIC/EPOXY TSOP2 TSOP54,.46,32 RECTANGULAR SMALL OUTLINE, THIN PROFILE YES Matte Tin (Sn) GULL WING 800 µm DUAL 1.2 mm 22.22 mm 10.16 mm TSOP2 TSOP2, TSOP54,.46,32 54 compliant EAR99 8542.32.00.24 6 weeks Micron
IS42S16400J-7TL
Integrated Silicon Solution Inc
查询价格
Yes Active 67.1089 Mbit 16 4MX16 3.3 V 5.4 ns 143 MHz 4096 FOUR BANK PAGE BURST SYNCHRONOUS DRAM AUTO/SELF REFRESH COMMON 1,2,4,8 1 1 4000000 4.1943 M SYNCHRONOUS 3-STATE NO YES 1,2,4,8,FP 70 µA 3.6 V 3 V CMOS COMMERCIAL R-PDSO-G54 Not Qualified e3 70 °C 54 PLASTIC/EPOXY TSOP2 TSOP54,.46,32 RECTANGULAR SMALL OUTLINE, THIN PROFILE YES Matte Tin (Sn) - annealed GULL WING 800 µm DUAL 1.2 mm 22.22 mm 10.16 mm TSOP2 TSOP2, TSOP54,.46,32 54 compliant EAR99 8542.32.00.02 6 weeks Integrated Silicon Solution Inc.
IS42S16400J-6TL
Integrated Silicon Solution Inc
查询价格
Yes Active 67.1089 Mbit 16 4MX16 3.3 V 5.4 ns 166 MHz 4096 FOUR BANK PAGE BURST SYNCHRONOUS DRAM AUTO/SELF REFRESH COMMON 1,2,4,8 1 1 4000000 4.1943 M SYNCHRONOUS 3-STATE NO YES 1,2,4,8,FP 80 µA 3.6 V 3 V CMOS COMMERCIAL R-PDSO-G54 Not Qualified 70 °C 54 PLASTIC/EPOXY TSOP2 TSOP54,.46,32 RECTANGULAR SMALL OUTLINE, THIN PROFILE YES GULL WING 800 µm DUAL 1.2 mm 22.22 mm 10.16 mm TSOP2 TSOP2, TSOP54,.46,32 54 compliant EAR99 8542.32.00.02 6 weeks
IS43DR16640C-3DBLI
Integrated Silicon Solution Inc
查询价格
Yes Active 1.0737 Gbit 16 64MX16 1.8 V 1.8 V 450 ps 333 MHz 8192 MULTI BANK PAGE BURST DDR DRAM AUTO/SELF REFRESH COMMON 4,8 1 1 64000000 67.1089 M SYNCHRONOUS 3-STATE YES 4,8 25 mA 270 µA 1.9 V 1.7 V CMOS INDUSTRIAL R-PBGA-B84 Not Qualified e1 3 85 °C -40 °C 260 10 84 PLASTIC/EPOXY TFBGA BGA84,9X15,32 RECTANGULAR GRID ARRAY, THIN PROFILE, FINE PITCH YES Tin/Silver/Copper (Sn/Ag/Cu) BALL 800 µm BOTTOM 1.2 mm 12.5 mm 8 mm TFBGA, BGA84,9X15,32 compliant EAR99 8542.32.00.32 6 weeks
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