DRAM封装型号_DRAM厂家价格-bom2buy

型号

型号						Most Relevant								Technical																			Compliance			Operating Conditions						Physical											Dimensions			Other
型号	数据手册	单价/库存	风险等级	是否无铅	是否Rohs认证	生命周期	内存密度	内存宽度	组织	标称供电电压 (Vsup)	最长访问时间	最大时钟频率 (fCLK)	刷新周期	访问模式	内存集成电路类型	其他特性	I/O 类型	交错的突发长度	功能数量	端口数量	字数代码	字数	工作模式	输出特性	自我刷新	连续突发长度	最大待机电流	最小待机电流	最大压摆率	最大供电电压 (Vsup)	最小供电电压 (Vsup)	技术	温度等级	JESD-30 代码	认证状态	JESD-609代码	湿度敏感等级	最高工作温度	最低工作温度	峰值回流温度（摄氏度）	筛选级别	处于峰值回流温度下的最长时间	端子数量	封装主体材料	封装代码	封装等效代码	封装形状	封装形式	表面贴装	端子面层	端子形式	端子节距	端子位置	座面最大高度	长度	宽度	mfrid	零件包装代码	针数	ECCN代码	HTS代码	YTEOL	包装说明	COO	特征	Date Of Intro
MT41K128M16JT-125:K Micron Technology Inc		查询价格和库存		Yes	Yes	Active	2.1475 Gbit	16	128MX16	1.35 V	225 ps	800 MHz	8192	MULTI BANK PAGE BURST	DDR3L DRAM	AUTO/SELF REFRESH	COMMON	8	1	1	128000000	134.2177 M	SYNCHRONOUS	3-STATE	YES	8	12 mA		195 µA	1.45 V	1.283 V	CMOS	OTHER	R-PBGA-B96	Not Qualified	e1		95 °C		260		30	96	PLASTIC/EPOXY	TFBGA	BGA96,9X16,32	RECTANGULAR	GRID ARRAY, THIN PROFILE, FINE PITCH	YES	TIN SILVER COPPER	BALL	800 µm	BOTTOM	1.2 mm	14 mm	8 mm	2190	BGA	96	EAR99	8542.32.00.36	5.1
AS4C16M16SA-7TCN Alliance Memory Inc		查询价格和库存			Yes	Active	268.4355 Mbit	16	16MX16	3.3 V	5.4 ns	143 MHz	8192	FOUR BANK PAGE BURST	SYNCHRONOUS DRAM	AUTO/SELF REFRESH	COMMON	1,2,4,8	1	1	16000000	16.7772 M	SYNCHRONOUS		YES	1,2,4,8,FP	20 mA	3 V	55 µA	3.6 V	3 V	CMOS	COMMERCIAL	R-PDSO-G54		e3	3	70 °C					54	PLASTIC/EPOXY	TSOP2	TSOP54,.46,32	RECTANGULAR	SMALL OUTLINE, THIN PROFILE	YES	TIN	GULL WING	800 µm	DUAL	1.2 mm	22.22 mm	10.16 mm	1689			EAR99	8542.32.00.24	4	TSOP2-54	Taiwan
MT41K128M16JT-107:K Micron Technology Inc		查询价格和库存			Yes	Active	2.1475 Gbit	16	128MX16	1.35 V	195 ps	933 MHz	8192	MULTI BANK PAGE BURST	DDR3L DRAM	AUTO/SELF REFRESH; ALSO OPERATES AT 1.5V NOMINAL SUPPLY	COMMON	8	1	1	128000000	134.2177 M	SYNCHRONOUS	3-STATE	YES	8	12 mA		219 µA	1.45 V	1.283 V	CMOS	OTHER	R-PBGA-B96	Not Qualified	e1		85 °C					96	PLASTIC/EPOXY	TFBGA	BGA96,9X16,32	RECTANGULAR	GRID ARRAY, THIN PROFILE, FINE PITCH	YES	Tin/Silver/Copper (Sn/Ag/Cu)	BALL	800 µm	BOTTOM	1.2 mm	14 mm	8 mm	2190			EAR99	8542.32.00.36	5.1
MT41K64M16TW-107:J Micron Technology Inc		查询价格和库存			Yes	Active	1.0737 Gbit	16	64MX16	1.35 V		933 MHz	8192	MULTI BANK PAGE BURST	DDR3L DRAM		COMMON	8	1	1	64000000	67.1089 M	SYNCHRONOUS	3-STATE	YES	8	28 mA		219 µA	1.45 V	1.283 V	CMOS		R-PBGA-B96	Not Qualified	e1		95 °C		260		30	96	PLASTIC/EPOXY	TFBGA	BGA96,6X16,32	RECTANGULAR	GRID ARRAY, THIN PROFILE, FINE PITCH	YES	Tin/Silver/Copper (Sn/Ag/Cu)	BALL	800 µm	BOTTOM	1.2 mm	14 mm	8 mm	2190			EAR99	8542.32.00.32	5.07	FBGA-96
AS4C4M16SA-7BCN Alliance Memory Inc		查询价格和库存			Yes	Active	67.1089 Mbit	16	4MX16	3.3 V	5.4 ns			FOUR BANK PAGE BURST	SYNCHRONOUS DRAM	AUTO/SELF REFRESH			1	1	4000000	4.1943 M	SYNCHRONOUS		YES					3.6 V	3 V	CMOS	COMMERCIAL	S-PBGA-B54		e1	3	70 °C					54	PLASTIC/EPOXY	TFBGA		SQUARE	GRID ARRAY, THIN PROFILE, FINE PITCH	YES	TIN SILVER COPPER	BALL	800 µm	BOTTOM	1.2 mm	8 mm	8 mm	1689			EAR99	8542.32.00.02	4	TFBGA-54	Taiwan
MT47H32M16NF-25E:H Micron Technology Inc		查询价格和库存		Yes	Yes	Active	536.8709 Mbit	16	32MX16	1.8 V	400 ps	400 MHz	8192	FOUR BANK PAGE BURST	DDR2 DRAM	AUTO/SELF REFRESH	COMMON	4,8	1	1	32000000	33.5544 M	SYNCHRONOUS	3-STATE	YES	4,8	10 mA		215 µA	1.9 V	1.7 V	CMOS	OTHER	R-PBGA-B84	Not Qualified	e1		85 °C		260		30	84	PLASTIC/EPOXY	TFBGA	BGA84,9X15,32	RECTANGULAR	GRID ARRAY, THIN PROFILE, FINE PITCH	YES	Tin/Silver/Copper (Sn96.5Ag3.0Cu0.5)	BALL	800 µm	BOTTOM	1.2 mm	12.5 mm	8 mm	2190	BGA	84	EAR99	8542.32.00.28	4.75	FBGA-84
AS4C16M16SA-6TCN Alliance Memory Inc		查询价格和库存			Yes	Active	268.4355 Mbit	16	16MX16	3.3 V	5 ns	166 MHz	8192	FOUR BANK PAGE BURST	SYNCHRONOUS DRAM	AUTO/SELF REFRESH	COMMON	1,2,4,8	1	1	16000000	16.7772 M	SYNCHRONOUS		YES	1,2,4,8,FP	25 mA		60 µA	3.6 V	3 V	CMOS	COMMERCIAL	R-PDSO-G54		e3	3	70 °C		260		40	54	PLASTIC/EPOXY	TSOP2	TSOP54,.46,32	RECTANGULAR	SMALL OUTLINE, THIN PROFILE	YES	TIN	GULL WING	800 µm	DUAL	1.2 mm	22.22 mm	10.16 mm	1689			EAR99	8542.32.00.24	4	TSOP2-54	Taiwan	Synchronous DRAM
AS4C16M16SA-6TIN Alliance Memory Inc		查询价格和库存			Yes	Active	268.4355 Mbit	16	16MX16	3.3 V	5 ns	166 MHz	8192	FOUR BANK PAGE BURST	SYNCHRONOUS DRAM	AUTO/SELF REFRESH	COMMON	1,2,4,8	1	1	16000000	16.7772 M	SYNCHRONOUS		YES	1,2,4,8,FP	25 mA		60 µA	3.6 V	3 V	CMOS	INDUSTRIAL	R-PDSO-G54		e3	3	85 °C	-40 °C				54	PLASTIC/EPOXY	TSOP2	TSOP54,.46,32	RECTANGULAR	SMALL OUTLINE, THIN PROFILE	YES	TIN	GULL WING	800 µm	DUAL	1.2 mm	22.22 mm	10.16 mm	1689			EAR99	8542.32.00.24	4	TSOP2-54	Taiwan	Synchronous DRAM
AS4C16M16SA-6TAN Alliance Memory Inc		查询价格和库存		Yes	Yes	Active	268.4355 Mbit	16	16MX16	3.3 V	5 ns			FOUR BANK PAGE BURST	SYNCHRONOUS DRAM	AUTO/SELF REFRESH			1	1	16000000	16.7772 M	SYNCHRONOUS		YES					3.6 V	3 V	CMOS	INDUSTRIAL	R-PDSO-G54			3	105 °C	-40 °C		AEC-Q100		54	PLASTIC/EPOXY	TSOP2		RECTANGULAR	SMALL OUTLINE, THIN PROFILE	YES		GULL WING	800 µm	DUAL	1.2 mm	22.22 mm	10.16 mm	1689			EAR99	8542.32.00.24	4	TSOP2-54	Taiwan	Synchronous DRAM
AS4C4M16SA-6TINTR Alliance Memory Inc		查询价格和库存			Yes	Active	67.1089 Mbit	16	4MX16	3.3 V	5.4 ns			FOUR BANK PAGE BURST	SYNCHRONOUS DRAM	AUTO/SELF REFRESH			1	1	4000000	4.1943 M	SYNCHRONOUS		YES					3.6 V	3 V	CMOS	INDUSTRIAL	S-PBGA-B54		e3	3	85 °C	-40 °C				54	PLASTIC/EPOXY	TFBGA		SQUARE	GRID ARRAY, THIN PROFILE, FINE PITCH	YES	Tin (Sn)	BALL	800 µm	BOTTOM	1.2 mm	8 mm	8 mm	1689			EAR99	8542.32.00.02	4	FBGA-54	Taiwan		2018-10-04
AS4C4M16SA-6TAN Alliance Memory Inc		查询价格和库存			Yes	Active	67.1089 Mbit	16	4MX16	3.3 V	5.4 ns	166 MHz	4096	FOUR BANK PAGE BURST	SYNCHRONOUS DRAM	AUTO/SELF REFRESH	COMMON	1,2,4,8	1	1	4000000	4.1943 M	SYNCHRONOUS	3-STATE	YES	1,2,4,8,FP	30 mA		75 µA	3.6 V	3 V	CMOS	INDUSTRIAL	R-PDSO-G54		e3	3	105 °C	-40 °C		AEC-Q100		54	PLASTIC/EPOXY	TSOP2	TSOP54,.46,32	RECTANGULAR	SMALL OUTLINE, THIN PROFILE	YES	TIN	GULL WING	800 µm	DUAL	1.2 mm	22.22 mm	10.16 mm	1689			EAR99	8542.32.00.02	4	TSOP2-54	Taiwan
AS4C4M16SA-6TIN Alliance Memory Inc		查询价格和库存			Yes	Active	67.1089 Mbit	16	4MX16	3.3 V	5.4 ns			FOUR BANK PAGE BURST	SYNCHRONOUS DRAM	AUTO/SELF REFRESH			1	1	4000000	4.1943 M	SYNCHRONOUS		YES					3.6 V	3 V	CMOS	INDUSTRIAL	R-PDSO-G54		e3	3	85 °C	-40 °C				54	PLASTIC/EPOXY	TSOP2		RECTANGULAR	SMALL OUTLINE, THIN PROFILE	YES	Tin (Sn)	GULL WING	800 µm	DUAL	1.2 mm	22.22 mm	10.16 mm	1689			EAR99	8542.32.00.02	4	TSOP2-54	Taiwan
AS4C4M16SA-6TCN Alliance Memory Inc		查询价格和库存			Yes	Active	67.1089 Mbit	16	4MX16	3.3 V	5.4 ns			FOUR BANK PAGE BURST	SYNCHRONOUS DRAM	AUTO/SELF REFRESH			1	1	4000000	4.1943 M	SYNCHRONOUS		YES					3.6 V	3 V	CMOS	COMMERCIAL	R-PDSO-G54		e3	3	70 °C					54	PLASTIC/EPOXY	TSOP2		RECTANGULAR	SMALL OUTLINE, THIN PROFILE	YES	TIN	GULL WING	800 µm	DUAL	1.2 mm	22.22 mm	10.16 mm	1689			EAR99	8542.32.00.02	4	TSOP2-54	Taiwan
AS4C4M16SA-7TCN Alliance Memory Inc		查询价格和库存			Yes	Active	67.1089 Mbit	16	4MX16	3.3 V	5.4 ns			FOUR BANK PAGE BURST	SYNCHRONOUS DRAM	AUTO/SELF REFRESH			1	1	4000000	4.1943 M	SYNCHRONOUS		YES					3.6 V	3 V	CMOS	COMMERCIAL	R-PDSO-G54		e3	3	70 °C					54	PLASTIC/EPOXY	TSOP2		RECTANGULAR	SMALL OUTLINE, THIN PROFILE	YES	TIN	GULL WING	800 µm	DUAL	1.2 mm	22.22 mm	10.16 mm	1689			EAR99	8542.32.00.02	4	TSOP2-54	Taiwan
AS4C16M16SA-7TCNTR Alliance Memory Inc		查询价格和库存			Yes	Active	268.4355 Mbit	16	16MX16	3.3 V	5.4 ns	143 MHz	8192	FOUR BANK PAGE BURST	SYNCHRONOUS DRAM	AUTO/SELF REFRESH	COMMON	1,2,4,8	1	1	16000000	16.7772 M	SYNCHRONOUS		YES	1,2,4,8,FP	20 mA		55 µA	3.6 V	3 V	CMOS		R-PDSO-G54			3	70 °C					54	PLASTIC/EPOXY	TSOP2	TSOP54,.46,32	RECTANGULAR	SMALL OUTLINE, THIN PROFILE	YES		GULL WING	800 µm	DUAL	1.2 mm	22.22 mm	10.16 mm	1689			EAR99	8542.32.00.24	4	TSOP2-54	Taiwan
AS4C8M16SA-6TCN Alliance Memory Inc		查询价格和库存			Yes	Active	134.2177 Mbit	16	8MX16	3.3 V	5 ns			FOUR BANK PAGE BURST	SYNCHRONOUS DRAM	AUTO/SELF REFRESH			1	1	8000000	8.3886 M	SYNCHRONOUS		YES					3.6 V	3 V	CMOS	COMMERCIAL	R-PDSO-G54		e3	3	70 °C					54	PLASTIC/EPOXY	TSOP2		RECTANGULAR	SMALL OUTLINE, THIN PROFILE	YES	TIN	GULL WING	800 µm	DUAL	1.2 mm	22.22 mm	10.16 mm	1689			EAR99	8542.32.00.02	4	0.400 INCH, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC, TSOP2-54	Taiwan
AS4C8M16SA-6TIN Alliance Memory Inc		查询价格和库存			Yes	Active	134.2177 Mbit	16	8MX16	3.3 V	5 ns			FOUR BANK PAGE BURST	SYNCHRONOUS DRAM	AUTO/SELF REFRESH			1	1	8000000	8.3886 M	SYNCHRONOUS		YES					3.6 V	3 V	CMOS	INDUSTRIAL	R-PDSO-G54		e3	3	85 °C	-40 °C	260		40	54	PLASTIC/EPOXY	TSOP2		RECTANGULAR	SMALL OUTLINE, THIN PROFILE	YES	TIN	GULL WING	800 µm	DUAL	1.2 mm	22.22 mm	10.16 mm	1689			EAR99	8542.32.00.02	4	0.400 INCH, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC, TSOP2-54	Taiwan
AS4C8M16SA-6TAN Alliance Memory Inc		查询价格和库存			Yes	Active	134.2177 Mbit	16	8MX16	3.3 V	6.5 ns			FOUR BANK PAGE BURST	SYNCHRONOUS DRAM	AUTO/SELF REFRESH			1	1	8000000	8.3886 M	SYNCHRONOUS		YES					3.6 V	3 V	CMOS	INDUSTRIAL	R-PDSO-G54		e3	3	105 °C	-40 °C				54	PLASTIC/EPOXY	TSOP2		RECTANGULAR	SMALL OUTLINE, THIN PROFILE	YES	TIN	GULL WING	800 µm	DUAL	1.2 mm	22.22 mm	10.16 mm	1689			EAR99	8542.32.00.02	4	0.400 INCH, HALOGEN AND LEAD FREE, PLASTIC, TSOP2-54	Taiwan
AS4C8M16SA-7TCN Alliance Memory Inc		查询价格和库存			Yes	Active	134.2177 Mbit	16	8MX16	3.3 V	5.4 ns			FOUR BANK PAGE BURST	SYNCHRONOUS DRAM	AUTO/SELF REFRESH			1	1	8000000	8.3886 M	SYNCHRONOUS		YES					3.6 V	3 V	CMOS	COMMERCIAL	R-PDSO-G54		e3	3	70 °C					54	PLASTIC/EPOXY	TSOP2		RECTANGULAR	SMALL OUTLINE, THIN PROFILE	YES	TIN	GULL WING	800 µm	DUAL	1.2 mm	22.22 mm	10.16 mm	1689			EAR99	8542.32.00.02	4	0.400 INCH, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC, TSOP2-54	Taiwan
MT47H64M16NF-25E:M Micron Technology Inc		查询价格和库存		Yes	Yes	Active	1.0737 Gbit	16	64MX16	1.8 V	400 ps	400 MHz	8192	MULTI BANK PAGE BURST	DDR2 DRAM		COMMON	4,8	1	1	64000000	67.1089 M	SYNCHRONOUS	3-STATE	YES	4,8	10 mA		260 µA	1.9 V	1.7 V	CMOS	OTHER	R-PBGA-B84	Not Qualified	e1		85 °C		260		30	84	PLASTIC/EPOXY	TFBGA	BGA84,9X15,32	RECTANGULAR	GRID ARRAY, THIN PROFILE, FINE PITCH	YES	TIN SILVER COPPER	BALL	800 µm	BOTTOM	1.2 mm	12.5 mm	8 mm	2190	BGA	84	EAR99	8542.32.00.32	5	FBGA-84	Mainland China, Malaysia, Taiwan

型号						Most Relevant								Technical																			Compliance			Operating Conditions						Physical											Dimensions			Other
型号	数据手册	单价/库存	风险等级	是否无铅	是否Rohs认证	生命周期	内存密度	内存宽度	组织	标称供电电压 (Vsup)	最长访问时间	最大时钟频率 (fCLK)	刷新周期	访问模式	内存集成电路类型	其他特性	I/O 类型	交错的突发长度	功能数量	端口数量	字数代码	字数	工作模式	输出特性	自我刷新	连续突发长度	最大待机电流	最小待机电流	最大压摆率	最大供电电压 (Vsup)	最小供电电压 (Vsup)	技术	温度等级	JESD-30 代码	认证状态	JESD-609代码	湿度敏感等级	最高工作温度	最低工作温度	峰值回流温度（摄氏度）	筛选级别	处于峰值回流温度下的最长时间	端子数量	封装主体材料	封装代码	封装等效代码	封装形状	封装形式	表面贴装	端子面层	端子形式	端子节距	端子位置	座面最大高度	长度	宽度	mfrid	零件包装代码	针数	ECCN代码	HTS代码	YTEOL	包装说明	COO	特征	Date Of Intro
MT41K128M16JT-125:K Micron Technology Inc		查询价格和库存		Yes	Yes	Active	2.1475 Gbit	16	128MX16	1.35 V	225 ps	800 MHz	8192	MULTI BANK PAGE BURST	DDR3L DRAM	AUTO/SELF REFRESH	COMMON	8	1	1	128000000	134.2177 M	SYNCHRONOUS	3-STATE	YES	8	12 mA		195 µA	1.45 V	1.283 V	CMOS	OTHER	R-PBGA-B96	Not Qualified	e1		95 °C		260		30	96	PLASTIC/EPOXY	TFBGA	BGA96,9X16,32	RECTANGULAR	GRID ARRAY, THIN PROFILE, FINE PITCH	YES	TIN SILVER COPPER	BALL	800 µm	BOTTOM	1.2 mm	14 mm	8 mm	2190	BGA	96	EAR99	8542.32.00.36	5.1
AS4C16M16SA-7TCN Alliance Memory Inc		查询价格和库存			Yes	Active	268.4355 Mbit	16	16MX16	3.3 V	5.4 ns	143 MHz	8192	FOUR BANK PAGE BURST	SYNCHRONOUS DRAM	AUTO/SELF REFRESH	COMMON	1,2,4,8	1	1	16000000	16.7772 M	SYNCHRONOUS		YES	1,2,4,8,FP	20 mA	3 V	55 µA	3.6 V	3 V	CMOS	COMMERCIAL	R-PDSO-G54		e3	3	70 °C					54	PLASTIC/EPOXY	TSOP2	TSOP54,.46,32	RECTANGULAR	SMALL OUTLINE, THIN PROFILE	YES	TIN	GULL WING	800 µm	DUAL	1.2 mm	22.22 mm	10.16 mm	1689			EAR99	8542.32.00.24	4	TSOP2-54	Taiwan
MT41K128M16JT-107:K Micron Technology Inc		查询价格和库存			Yes	Active	2.1475 Gbit	16	128MX16	1.35 V	195 ps	933 MHz	8192	MULTI BANK PAGE BURST	DDR3L DRAM	AUTO/SELF REFRESH; ALSO OPERATES AT 1.5V NOMINAL SUPPLY	COMMON	8	1	1	128000000	134.2177 M	SYNCHRONOUS	3-STATE	YES	8	12 mA		219 µA	1.45 V	1.283 V	CMOS	OTHER	R-PBGA-B96	Not Qualified	e1		85 °C					96	PLASTIC/EPOXY	TFBGA	BGA96,9X16,32	RECTANGULAR	GRID ARRAY, THIN PROFILE, FINE PITCH	YES	Tin/Silver/Copper (Sn/Ag/Cu)	BALL	800 µm	BOTTOM	1.2 mm	14 mm	8 mm	2190			EAR99	8542.32.00.36	5.1
MT41K64M16TW-107:J Micron Technology Inc		查询价格和库存			Yes	Active	1.0737 Gbit	16	64MX16	1.35 V		933 MHz	8192	MULTI BANK PAGE BURST	DDR3L DRAM		COMMON	8	1	1	64000000	67.1089 M	SYNCHRONOUS	3-STATE	YES	8	28 mA		219 µA	1.45 V	1.283 V	CMOS		R-PBGA-B96	Not Qualified	e1		95 °C		260		30	96	PLASTIC/EPOXY	TFBGA	BGA96,6X16,32	RECTANGULAR	GRID ARRAY, THIN PROFILE, FINE PITCH	YES	Tin/Silver/Copper (Sn/Ag/Cu)	BALL	800 µm	BOTTOM	1.2 mm	14 mm	8 mm	2190			EAR99	8542.32.00.32	5.07	FBGA-96
AS4C4M16SA-7BCN Alliance Memory Inc		查询价格和库存			Yes	Active	67.1089 Mbit	16	4MX16	3.3 V	5.4 ns			FOUR BANK PAGE BURST	SYNCHRONOUS DRAM	AUTO/SELF REFRESH			1	1	4000000	4.1943 M	SYNCHRONOUS		YES					3.6 V	3 V	CMOS	COMMERCIAL	S-PBGA-B54		e1	3	70 °C					54	PLASTIC/EPOXY	TFBGA		SQUARE	GRID ARRAY, THIN PROFILE, FINE PITCH	YES	TIN SILVER COPPER	BALL	800 µm	BOTTOM	1.2 mm	8 mm	8 mm	1689			EAR99	8542.32.00.02	4	TFBGA-54	Taiwan
MT47H32M16NF-25E:H Micron Technology Inc		查询价格和库存		Yes	Yes	Active	536.8709 Mbit	16	32MX16	1.8 V	400 ps	400 MHz	8192	FOUR BANK PAGE BURST	DDR2 DRAM	AUTO/SELF REFRESH	COMMON	4,8	1	1	32000000	33.5544 M	SYNCHRONOUS	3-STATE	YES	4,8	10 mA		215 µA	1.9 V	1.7 V	CMOS	OTHER	R-PBGA-B84	Not Qualified	e1		85 °C		260		30	84	PLASTIC/EPOXY	TFBGA	BGA84,9X15,32	RECTANGULAR	GRID ARRAY, THIN PROFILE, FINE PITCH	YES	Tin/Silver/Copper (Sn96.5Ag3.0Cu0.5)	BALL	800 µm	BOTTOM	1.2 mm	12.5 mm	8 mm	2190	BGA	84	EAR99	8542.32.00.28	4.75	FBGA-84
AS4C16M16SA-6TCN Alliance Memory Inc		查询价格和库存			Yes	Active	268.4355 Mbit	16	16MX16	3.3 V	5 ns	166 MHz	8192	FOUR BANK PAGE BURST	SYNCHRONOUS DRAM	AUTO/SELF REFRESH	COMMON	1,2,4,8	1	1	16000000	16.7772 M	SYNCHRONOUS		YES	1,2,4,8,FP	25 mA		60 µA	3.6 V	3 V	CMOS	COMMERCIAL	R-PDSO-G54		e3	3	70 °C		260		40	54	PLASTIC/EPOXY	TSOP2	TSOP54,.46,32	RECTANGULAR	SMALL OUTLINE, THIN PROFILE	YES	TIN	GULL WING	800 µm	DUAL	1.2 mm	22.22 mm	10.16 mm	1689			EAR99	8542.32.00.24	4	TSOP2-54	Taiwan	Synchronous DRAM
AS4C16M16SA-6TIN Alliance Memory Inc		查询价格和库存			Yes	Active	268.4355 Mbit	16	16MX16	3.3 V	5 ns	166 MHz	8192	FOUR BANK PAGE BURST	SYNCHRONOUS DRAM	AUTO/SELF REFRESH	COMMON	1,2,4,8	1	1	16000000	16.7772 M	SYNCHRONOUS		YES	1,2,4,8,FP	25 mA		60 µA	3.6 V	3 V	CMOS	INDUSTRIAL	R-PDSO-G54		e3	3	85 °C	-40 °C				54	PLASTIC/EPOXY	TSOP2	TSOP54,.46,32	RECTANGULAR	SMALL OUTLINE, THIN PROFILE	YES	TIN	GULL WING	800 µm	DUAL	1.2 mm	22.22 mm	10.16 mm	1689			EAR99	8542.32.00.24	4	TSOP2-54	Taiwan	Synchronous DRAM
AS4C16M16SA-6TAN Alliance Memory Inc		查询价格和库存		Yes	Yes	Active	268.4355 Mbit	16	16MX16	3.3 V	5 ns			FOUR BANK PAGE BURST	SYNCHRONOUS DRAM	AUTO/SELF REFRESH			1	1	16000000	16.7772 M	SYNCHRONOUS		YES					3.6 V	3 V	CMOS	INDUSTRIAL	R-PDSO-G54			3	105 °C	-40 °C		AEC-Q100		54	PLASTIC/EPOXY	TSOP2		RECTANGULAR	SMALL OUTLINE, THIN PROFILE	YES		GULL WING	800 µm	DUAL	1.2 mm	22.22 mm	10.16 mm	1689			EAR99	8542.32.00.24	4	TSOP2-54	Taiwan	Synchronous DRAM
AS4C4M16SA-6TINTR Alliance Memory Inc		查询价格和库存			Yes	Active	67.1089 Mbit	16	4MX16	3.3 V	5.4 ns			FOUR BANK PAGE BURST	SYNCHRONOUS DRAM	AUTO/SELF REFRESH			1	1	4000000	4.1943 M	SYNCHRONOUS		YES					3.6 V	3 V	CMOS	INDUSTRIAL	S-PBGA-B54		e3	3	85 °C	-40 °C				54	PLASTIC/EPOXY	TFBGA		SQUARE	GRID ARRAY, THIN PROFILE, FINE PITCH	YES	Tin (Sn)	BALL	800 µm	BOTTOM	1.2 mm	8 mm	8 mm	1689			EAR99	8542.32.00.02	4	FBGA-54	Taiwan		2018-10-04
AS4C4M16SA-6TAN Alliance Memory Inc		查询价格和库存			Yes	Active	67.1089 Mbit	16	4MX16	3.3 V	5.4 ns	166 MHz	4096	FOUR BANK PAGE BURST	SYNCHRONOUS DRAM	AUTO/SELF REFRESH	COMMON	1,2,4,8	1	1	4000000	4.1943 M	SYNCHRONOUS	3-STATE	YES	1,2,4,8,FP	30 mA		75 µA	3.6 V	3 V	CMOS	INDUSTRIAL	R-PDSO-G54		e3	3	105 °C	-40 °C		AEC-Q100		54	PLASTIC/EPOXY	TSOP2	TSOP54,.46,32	RECTANGULAR	SMALL OUTLINE, THIN PROFILE	YES	TIN	GULL WING	800 µm	DUAL	1.2 mm	22.22 mm	10.16 mm	1689			EAR99	8542.32.00.02	4	TSOP2-54	Taiwan
AS4C4M16SA-6TIN Alliance Memory Inc		查询价格和库存			Yes	Active	67.1089 Mbit	16	4MX16	3.3 V	5.4 ns			FOUR BANK PAGE BURST	SYNCHRONOUS DRAM	AUTO/SELF REFRESH			1	1	4000000	4.1943 M	SYNCHRONOUS		YES					3.6 V	3 V	CMOS	INDUSTRIAL	R-PDSO-G54		e3	3	85 °C	-40 °C				54	PLASTIC/EPOXY	TSOP2		RECTANGULAR	SMALL OUTLINE, THIN PROFILE	YES	Tin (Sn)	GULL WING	800 µm	DUAL	1.2 mm	22.22 mm	10.16 mm	1689			EAR99	8542.32.00.02	4	TSOP2-54	Taiwan
AS4C4M16SA-6TCN Alliance Memory Inc		查询价格和库存			Yes	Active	67.1089 Mbit	16	4MX16	3.3 V	5.4 ns			FOUR BANK PAGE BURST	SYNCHRONOUS DRAM	AUTO/SELF REFRESH			1	1	4000000	4.1943 M	SYNCHRONOUS		YES					3.6 V	3 V	CMOS	COMMERCIAL	R-PDSO-G54		e3	3	70 °C					54	PLASTIC/EPOXY	TSOP2		RECTANGULAR	SMALL OUTLINE, THIN PROFILE	YES	TIN	GULL WING	800 µm	DUAL	1.2 mm	22.22 mm	10.16 mm	1689			EAR99	8542.32.00.02	4	TSOP2-54	Taiwan
AS4C4M16SA-7TCN Alliance Memory Inc		查询价格和库存			Yes	Active	67.1089 Mbit	16	4MX16	3.3 V	5.4 ns			FOUR BANK PAGE BURST	SYNCHRONOUS DRAM	AUTO/SELF REFRESH			1	1	4000000	4.1943 M	SYNCHRONOUS		YES					3.6 V	3 V	CMOS	COMMERCIAL	R-PDSO-G54		e3	3	70 °C					54	PLASTIC/EPOXY	TSOP2		RECTANGULAR	SMALL OUTLINE, THIN PROFILE	YES	TIN	GULL WING	800 µm	DUAL	1.2 mm	22.22 mm	10.16 mm	1689			EAR99	8542.32.00.02	4	TSOP2-54	Taiwan
AS4C16M16SA-7TCNTR Alliance Memory Inc		查询价格和库存			Yes	Active	268.4355 Mbit	16	16MX16	3.3 V	5.4 ns	143 MHz	8192	FOUR BANK PAGE BURST	SYNCHRONOUS DRAM	AUTO/SELF REFRESH	COMMON	1,2,4,8	1	1	16000000	16.7772 M	SYNCHRONOUS		YES	1,2,4,8,FP	20 mA		55 µA	3.6 V	3 V	CMOS		R-PDSO-G54			3	70 °C					54	PLASTIC/EPOXY	TSOP2	TSOP54,.46,32	RECTANGULAR	SMALL OUTLINE, THIN PROFILE	YES		GULL WING	800 µm	DUAL	1.2 mm	22.22 mm	10.16 mm	1689			EAR99	8542.32.00.24	4	TSOP2-54	Taiwan
AS4C8M16SA-6TCN Alliance Memory Inc		查询价格和库存			Yes	Active	134.2177 Mbit	16	8MX16	3.3 V	5 ns			FOUR BANK PAGE BURST	SYNCHRONOUS DRAM	AUTO/SELF REFRESH			1	1	8000000	8.3886 M	SYNCHRONOUS		YES					3.6 V	3 V	CMOS	COMMERCIAL	R-PDSO-G54		e3	3	70 °C					54	PLASTIC/EPOXY	TSOP2		RECTANGULAR	SMALL OUTLINE, THIN PROFILE	YES	TIN	GULL WING	800 µm	DUAL	1.2 mm	22.22 mm	10.16 mm	1689			EAR99	8542.32.00.02	4	0.400 INCH, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC, TSOP2-54	Taiwan
AS4C8M16SA-6TIN Alliance Memory Inc		查询价格和库存			Yes	Active	134.2177 Mbit	16	8MX16	3.3 V	5 ns			FOUR BANK PAGE BURST	SYNCHRONOUS DRAM	AUTO/SELF REFRESH			1	1	8000000	8.3886 M	SYNCHRONOUS		YES					3.6 V	3 V	CMOS	INDUSTRIAL	R-PDSO-G54		e3	3	85 °C	-40 °C	260		40	54	PLASTIC/EPOXY	TSOP2		RECTANGULAR	SMALL OUTLINE, THIN PROFILE	YES	TIN	GULL WING	800 µm	DUAL	1.2 mm	22.22 mm	10.16 mm	1689			EAR99	8542.32.00.02	4	0.400 INCH, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC, TSOP2-54	Taiwan
AS4C8M16SA-6TAN Alliance Memory Inc		查询价格和库存			Yes	Active	134.2177 Mbit	16	8MX16	3.3 V	6.5 ns			FOUR BANK PAGE BURST	SYNCHRONOUS DRAM	AUTO/SELF REFRESH			1	1	8000000	8.3886 M	SYNCHRONOUS		YES					3.6 V	3 V	CMOS	INDUSTRIAL	R-PDSO-G54		e3	3	105 °C	-40 °C				54	PLASTIC/EPOXY	TSOP2		RECTANGULAR	SMALL OUTLINE, THIN PROFILE	YES	TIN	GULL WING	800 µm	DUAL	1.2 mm	22.22 mm	10.16 mm	1689			EAR99	8542.32.00.02	4	0.400 INCH, HALOGEN AND LEAD FREE, PLASTIC, TSOP2-54	Taiwan
AS4C8M16SA-7TCN Alliance Memory Inc		查询价格和库存			Yes	Active	134.2177 Mbit	16	8MX16	3.3 V	5.4 ns			FOUR BANK PAGE BURST	SYNCHRONOUS DRAM	AUTO/SELF REFRESH			1	1	8000000	8.3886 M	SYNCHRONOUS		YES					3.6 V	3 V	CMOS	COMMERCIAL	R-PDSO-G54		e3	3	70 °C					54	PLASTIC/EPOXY	TSOP2		RECTANGULAR	SMALL OUTLINE, THIN PROFILE	YES	TIN	GULL WING	800 µm	DUAL	1.2 mm	22.22 mm	10.16 mm	1689			EAR99	8542.32.00.02	4	0.400 INCH, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC, TSOP2-54	Taiwan
MT47H64M16NF-25E:M Micron Technology Inc		查询价格和库存		Yes	Yes	Active	1.0737 Gbit	16	64MX16	1.8 V	400 ps	400 MHz	8192	MULTI BANK PAGE BURST	DDR2 DRAM		COMMON	4,8	1	1	64000000	67.1089 M	SYNCHRONOUS	3-STATE	YES	4,8	10 mA		260 µA	1.9 V	1.7 V	CMOS	OTHER	R-PBGA-B84	Not Qualified	e1		85 °C		260		30	84	PLASTIC/EPOXY	TFBGA	BGA84,9X15,32	RECTANGULAR	GRID ARRAY, THIN PROFILE, FINE PITCH	YES	TIN SILVER COPPER	BALL	800 µm	BOTTOM	1.2 mm	12.5 mm	8 mm	2190	BGA	84	EAR99	8542.32.00.32	5	FBGA-84	Mainland China, Malaysia, Taiwan

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