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DRAM:

266,855 个筛选结果
动态随机存取存储器(Dynamic Random Access Memory,DRAM)是一种半导体存储器,主要的作用原理是利用电容内存储电荷的多寡来代表一个二进制比特(bit)是1还是0。由于在现实中晶体管会有漏电电流的现象,导致电容上所存储的电荷数量并不足以正确的判别数据,而导致数据毁损。因此对于DRAM来说,周期性地充电是一个无可避免的要件。由于这种需要定时刷新的特性,因此被称为“动态”存储器。相对来说,静态存储器(SRAM)只要存入数据后,纵使不刷新也不会丢失记忆。
SRAM (554,964)
闪存 (306,870)
DRAM (266,855)
EEPROM (150,548)
FIFO (72,737)
OTP ROM (40,083)
EPROM (23,326)
MASK ROM (10,201)
PROM (70)
访问模式 (18)
最长访问时间 (50)
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最大时钟频率 (fCLK) (50)
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制造商 (50)
内存密度 (50)
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内存宽度 (26)
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组织 (50)
Most Relevant Technical Compliance Operating Conditions Physical Dimensions Other
制造商型号 制造商 数据手册 价格/库存
风险等级 是否无铅 是否Rohs认证
生命周期 内存密度 内存宽度 组织 标称供电电压 (Vsup)
电源
最长访问时间 最大时钟频率 (fCLK) 刷新周期
访问模式 内存集成电路类型 其他特性 I/O 类型 交错的突发长度 功能数量 端口数量 字数代码 字数 工作模式 输出特性 反向引出线
自我刷新
连续突发长度
最大待机电流
最小待机电流
最大压摆率
最大供电电压 (Vsup)
最小供电电压 (Vsup)
技术 温度等级
JESD-30 代码 认证状态
JESD-609代码 湿度敏感等级 最高工作温度 最低工作温度 峰值回流温度(摄氏度) 筛选级别
处于峰值回流温度下的最长时间
端子数量 封装主体材料 封装代码 封装等效代码 封装形状 封装形式 表面贴装
端子面层
端子形式
端子节距
端子位置
座面最大高度
长度 宽度
Objectid
零件包装代码
包装说明
针数
是否符合REACH标准
ECCN代码
HTS代码
交付时间
Samacsys Manufacturer
MT41K128M16JT-125:K
Micron Technology Inc
查询价格和库存
Yes Yes Active 2.1475 Gbit 16 128MX16 1.35 V 1.35 V 225 ps 800 MHz 8192 MULTI BANK PAGE BURST DDR3L DRAM AUTO/SELF REFRESH COMMON 8 1 1 128000000 134.2177 M SYNCHRONOUS 3-STATE YES 8 12 mA 195 µA 1.45 V 1.283 V CMOS OTHER R-PBGA-B96 Not Qualified e1 95 °C 260 30 96 PLASTIC/EPOXY TFBGA BGA96,9X16,32 RECTANGULAR GRID ARRAY, THIN PROFILE, FINE PITCH YES Tin/Silver/Copper (Sn96.5Ag3.0Cu0.5) BALL 800 µm BOTTOM 1.2 mm 14 mm 8 mm 1080675828 BGA TFBGA, BGA96,9X16,32 96 compliant EAR99 8542.32.00.36 15 weeks 6 days Micron
MT41K256M16TW-107:P
Micron Technology Inc
查询价格和库存
Yes Active 4.295 Gbit 16 256MX16 1.35 V MULTI BANK PAGE BURST DDR DRAM AUTO/SELF REFRESH 1 1 256000000 268.4355 M SYNCHRONOUS YES 1.45 V 1.283 V CMOS OTHER R-PBGA-B96 e1 95 °C 260 30 96 PLASTIC/EPOXY TFBGA RECTANGULAR GRID ARRAY, THIN PROFILE, FINE PITCH YES Tin/Silver/Copper (Sn/Ag/Cu) BALL 800 µm BOTTOM 1.2 mm 14 mm 8 mm 8145480025 TFBGA, compliant EAR99 8542.32.00.36 26 weeks 1 day Micron
MT41K256M8DA-125:K
Micron Technology Inc
查询价格和库存
Yes Active 2.1475 Gbit 8 256MX8 1.35 V 1.35 V 225 ps 800 MHz 8192 MULTI BANK PAGE BURST DDR3L DRAM AUTO/SELF REFRESH COMMON 8 1 1 256000000 268.4355 M SYNCHRONOUS 3-STATE YES 8 12 mA 156 µA 1.45 V 1.283 V CMOS OTHER R-PBGA-B78 Not Qualified e1 3 95 °C 260 30 78 PLASTIC/EPOXY TFBGA BGA78,9X13,32 RECTANGULAR GRID ARRAY, THIN PROFILE, FINE PITCH YES Tin/Silver/Copper (Sn96.5Ag3.0Cu0.5) BALL 800 µm BOTTOM 1.2 mm 10.5 mm 8 mm 1080675832 BGA TFBGA, BGA78,9X13,32 78 not_compliant EAR99 8542.32.00.36 15 weeks 6 days Micron
IS42S32200L-7TL
Integrated Silicon Solution Inc
查询价格和库存
Yes Active 67.1089 Mbit 32 2MX32 3.3 V 3.3 V 5.4 ns 143 MHz 4096 FOUR BANK PAGE BURST SYNCHRONOUS DRAM AUTO/SELF REFRESH COMMON 1,2,4,8 1 1 2000000 2.0972 M SYNCHRONOUS 3-STATE YES 1,2,4,8,FP 2 mA 90 µA 3.6 V 3 V CMOS COMMERCIAL R-PDSO-G86 Not Qualified 70 °C 86 PLASTIC/EPOXY TSOP2 TSSOP86,.46,20 RECTANGULAR SMALL OUTLINE, THIN PROFILE YES GULL WING 500 µm DUAL 1.2 mm 22.22 mm 10.16 mm 1078916472 TSOP2 TSOP2, TSSOP86,.46,20 86 compliant EAR99 8542.32.00.02 20 weeks
MT41K64M16TW-107:J
Micron Technology Inc
查询价格和库存
Yes Active 1.0737 Gbit 16 64MX16 1.35 V 1.35 V 195 ps 933 MHz 8192 MULTI BANK PAGE BURST DDR DRAM AUTO/SELF REFRESH COMMON 8 1 1 64000000 67.1089 M SYNCHRONOUS 3-STATE YES 8 12 mA 219 µA 1.45 V 1.283 V CMOS R-PBGA-B96 Not Qualified NOT SPECIFIED NOT SPECIFIED 96 PLASTIC/EPOXY TFBGA BGA96,9X16,32 RECTANGULAR GRID ARRAY, THIN PROFILE, FINE PITCH YES BALL 800 µm BOTTOM 1.2 mm 14 mm 8 mm 1827747630 TFBGA, BGA96,9X16,32 compliant EAR99 8542.32.00.32 30 weeks 4 days Micron
IS42S32200L-7TLI
Integrated Silicon Solution Inc
查询价格和库存
Yes Active 67.1089 Mbit 32 2MX32 3.3 V 3.3 V 5.4 ns 143 MHz 4096 FOUR BANK PAGE BURST SYNCHRONOUS DRAM AUTO/SELF REFRESH COMMON 1,2,4,8 1 1 2000000 2.0972 M SYNCHRONOUS 3-STATE YES 1,2,4,8,FP 2 mA 90 µA 3.6 V 3 V CMOS INDUSTRIAL R-PDSO-G86 Not Qualified e3 3 85 °C -40 °C 260 10 86 PLASTIC/EPOXY TSOP2 TSSOP86,.46,20 RECTANGULAR SMALL OUTLINE, THIN PROFILE YES Matte Tin (Sn) GULL WING 500 µm DUAL 1.2 mm 22.22 mm 10.16 mm 1078916471 TSOP2 TSOP2, TSSOP86,.46,20 86 compliant EAR99 8542.32.00.02 20 weeks Integrated Silicon Solution Inc.
IS45S32200L-7TLA1
Integrated Silicon Solution Inc
查询价格和库存
Yes Active 67.1089 Mbit 32 2MX32 3.3 V 3.3 V 5.4 ns 143 MHz 4096 FOUR BANK PAGE BURST SYNCHRONOUS DRAM AUTO/SELF REFRESH COMMON 1,2,4,8 1 1 2000000 2.0972 M SYNCHRONOUS 3-STATE YES 1,2,4,8,FP 2 mA 90 µA 3.6 V 3 V CMOS INDUSTRIAL R-PDSO-G86 Not Qualified 85 °C -40 °C AEC-Q100 86 PLASTIC/EPOXY TSOP2 TSSOP86,.46,20 RECTANGULAR SMALL OUTLINE, THIN PROFILE YES GULL WING 500 µm DUAL 1.2 mm 22.22 mm 10.16 mm 1078916480 TSOP2 TSOP2, TSSOP86,.46,20 86 compliant EAR99 8542.32.00.02 24 weeks
MT47H64M16NF-25E:M
Micron Technology Inc
查询价格和库存
Yes Yes Active 1.0737 Gbit 16 64MX16 1.8 V 1.8 V 400 ps 400 MHz 8192 MULTI BANK PAGE BURST DDR DRAM SELF REFRESH COMMON 4,8 1 1 64000000 67.1089 M SYNCHRONOUS 3-STATE YES 4,8 1.9 V 1.7 V CMOS OTHER R-PBGA-B84 Not Qualified e1 85 °C 260 30 84 PLASTIC/EPOXY TFBGA BGA84,9X15,32 RECTANGULAR GRID ARRAY, THIN PROFILE, FINE PITCH YES Tin/Silver/Copper (Sn96.5Ag3.0Cu0.5) BALL 800 µm BOTTOM 1.2 mm 12.5 mm 8 mm 1786116122 BGA TFBGA, BGA84,9X15,32 84 not_compliant EAR99 8542.32.00.32 53 weeks 1 day Micron
IS43DR16640C-25DBL
Integrated Silicon Solution Inc
查询价格和库存
Yes Active 1.0737 Gbit 16 64MX16 1.8 V 1.8 V 400 ps 400 MHz 8192 MULTI BANK PAGE BURST DDR DRAM AUTO/SELF REFRESH COMMON 4,8 1 1 64000000 67.1089 M SYNCHRONOUS 3-STATE YES 4,8 25 mA 280 µA 1.9 V 1.7 V CMOS OTHER R-PBGA-B84 Not Qualified e1 3 85 °C 260 10 84 PLASTIC/EPOXY TFBGA BGA84,9X15,32 RECTANGULAR GRID ARRAY, THIN PROFILE, FINE PITCH YES Tin/Silver/Copper (Sn/Ag/Cu) BALL 800 µm BOTTOM 1.2 mm 12.5 mm 8 mm 8065715544 TFBGA, BGA84,9X15,32 compliant EAR99 8542.32.00.32 9 weeks 3 days
MT47H128M16RT-25E:C
Micron Technology Inc
查询价格和库存
Yes Yes Active 2.1475 Gbit 16 128MX16 1.8 V 1.8 V 400 ps 400 MHz 8192 MULTI BANK PAGE BURST DDR DRAM AUTO/SELF REFRESH COMMON 4,8 1 1 128000000 134.2177 M SYNCHRONOUS 3-STATE YES 4,8 12 mA 330 µA 1.9 V 1.7 V CMOS OTHER R-PBGA-B84 Not Qualified e1 85 °C 260 30 84 PLASTIC/EPOXY TFBGA BGA84,9X15,32 RECTANGULAR GRID ARRAY, THIN PROFILE, FINE PITCH YES Tin/Silver/Copper (Sn96.5Ag3.0Cu0.5) BALL 800 µm BOTTOM 1.2 mm 12.5 mm 9 mm 1471392145 BGA TFBGA, BGA84,9X15,32 84 compliant EAR99 8542.32.00.36 53 weeks 1 day Micron
MT41K128M16JT-107:K
Micron Technology Inc
查询价格和库存
Yes Active 2.1475 Gbit 16 128MX16 1.35 V 1.35 V 195 ps 933 MHz 8192 MULTI BANK PAGE BURST DDR3L DRAM AUTO/SELF REFRESH; ALSO OPERATES AT 1.5V NOMINAL SUPPLY COMMON 8 1 1 128000000 134.2177 M SYNCHRONOUS 3-STATE YES 8 12 mA 219 µA 1.45 V 1.283 V CMOS OTHER R-PBGA-B96 Not Qualified e1 85 °C 260 30 96 PLASTIC/EPOXY TFBGA BGA96,9X16,32 RECTANGULAR GRID ARRAY, THIN PROFILE, FINE PITCH YES Tin/Silver/Copper (Sn/Ag/Cu) BALL 800 µm BOTTOM 1.2 mm 14 mm 8 mm 1250477717 TFBGA, BGA96,9X16,32 compliant EAR99 8542.32.00.36 30 weeks 4 days Micron
MT41K512M8DA-107:P
Micron Technology Inc
查询价格和库存
Yes Active 4.295 Gbit 8 512MX8 1.35 V MULTI BANK PAGE BURST DDR DRAM AUTO/SELF REFRESH 1 1 512000000 536.8709 M SYNCHRONOUS YES 1.45 V 1.283 V CMOS OTHER R-PBGA-B78 85 °C NOT SPECIFIED NOT SPECIFIED 78 PLASTIC/EPOXY TFBGA RECTANGULAR GRID ARRAY, THIN PROFILE, FINE PITCH YES BALL 800 µm BOTTOM 1.2 mm 10.5 mm 8 mm 8152433285 TFBGA, compliant EAR99 8542.32.00.36 53 weeks 1 day
MT47H128M8SH-25E:M
Micron Technology Inc
查询价格和库存
Yes Yes Active 1.0737 Gbit 8 128MX8 1.8 V 1.8 V 400 ps 400 MHz 8192 MULTI BANK PAGE BURST DDR DRAM AUTO/SELF REFRESH COMMON 4,8 1 1 128000000 134.2177 M SYNCHRONOUS 3-STATE YES 4,8 1.9 V 1.7 V CMOS OTHER R-PBGA-B60 Not Qualified e1 85 °C 260 30 60 PLASTIC/EPOXY TFBGA BGA60,9X11,32 RECTANGULAR GRID ARRAY, THIN PROFILE, FINE PITCH YES Tin/Silver/Copper (Sn/Ag/Cu) BALL 800 µm BOTTOM 1.2 mm 10 mm 8 mm 1422571567 BGA TFBGA, BGA60,9X11,32 60 compliant EAR99 8542.32.00.32
MT47H256M8EB-25E:C
Micron Technology Inc
查询价格和库存
Yes Yes Active 2.1475 Gbit 8 256MX8 1.8 V 1.8 V 400 ps 400 MHz 8192 MULTI BANK PAGE BURST DDR DRAM AUTO/SELF REFRESH COMMON 4,8 1 1 256000000 268.4355 M SYNCHRONOUS 3-STATE YES 4,8 12 mA 250 µA 1.9 V 1.7 V CMOS OTHER R-PBGA-B60 Not Qualified e1 85 °C 260 30 60 PLASTIC/EPOXY TFBGA BGA60,9X11,32 RECTANGULAR GRID ARRAY, THIN PROFILE, FINE PITCH YES Tin/Silver/Copper (Sn96.5Ag3.0Cu0.5) BALL 800 µm BOTTOM 1.2 mm 11.5 mm 9 mm 1793344415 BGA TFBGA, BGA60,9X11,32 60 compliant EAR99 8542.32.00.36 53 weeks 1 day Micron
IS42S16800F-7TL
Integrated Silicon Solution Inc
查询价格和库存
Yes Yes Active 134.2177 Mbit 16 8MX16 3.3 V 3.3 V 5.4 ns 143 MHz 4096 FOUR BANK PAGE BURST SYNCHRONOUS DRAM AUTO/SELF REFRESH COMMON 1,2,4,8 1 1 8000000 8.3886 M SYNCHRONOUS 3-STATE YES 1,2,4,8,FP 2 mA 100 µA 3.6 V 3 V CMOS COMMERCIAL R-PDSO-G54 Not Qualified e3 3 70 °C 260 10 54 PLASTIC/EPOXY TSOP2 TSOP54,.46,32 RECTANGULAR SMALL OUTLINE, THIN PROFILE YES Matte Tin (Sn) GULL WING 800 µm DUAL 1.2 mm 22.22 mm 10.16 mm 1165897390 TSOP2 TSOP2, TSOP54,.46,32 54 compliant EAR99 8542.32.00.02 20 weeks Integrated Silicon Solution Inc.
IS42S16400J-7TLI
Integrated Silicon Solution Inc
查询价格和库存
Yes Active 67.1089 Mbit 16 4MX16 3.3 V 5.4 ns 143 MHz 4096 FOUR BANK PAGE BURST SYNCHRONOUS DRAM AUTO/SELF REFRESH COMMON 1,2,4,8 1 1 4000000 4.1943 M SYNCHRONOUS 3-STATE NO YES 1,2,4,8,FP 70 µA 3.6 V 3 V CMOS INDUSTRIAL R-PDSO-G54 Not Qualified e3 85 °C -40 °C 54 PLASTIC/EPOXY TSOP2 TSOP54,.46,32 RECTANGULAR SMALL OUTLINE, THIN PROFILE YES Matte Tin (Sn) - annealed GULL WING 800 µm DUAL 1.2 mm 22.22 mm 10.16 mm 1027650884 TSOP2 TSOP2, TSOP54,.46,32 54 compliant EAR99 8542.32.00.02 20 weeks Integrated Silicon Solution Inc.
AS4C32M16D2A-25BCN
Alliance Memory Inc
查询价格和库存
Yes Active 536.8709 Mbit 16 32MX16 1.8 V 400 ps FOUR BANK PAGE BURST SYNCHRONOUS DRAM AUTO/SELF REFRESH 1 1 32000000 33.5544 M SYNCHRONOUS YES 1.9 V 1.7 V CMOS OTHER R-PBGA-B84 85 °C NOT SPECIFIED NOT SPECIFIED 84 PLASTIC/EPOXY TFBGA RECTANGULAR GRID ARRAY, THIN PROFILE, FINE PITCH YES BALL 800 µm BOTTOM 1.2 mm 12.5 mm 8 mm 8088787754 TFBGA, compliant EAR99 8542.32.00.28 Alliance Memory
IS42S16800F-7TLI
Integrated Silicon Solution Inc
查询价格和库存
Yes Active 134.2177 Mbit 16 8MX16 3.3 V 3.3 V 5.4 ns 143 MHz 4096 FOUR BANK PAGE BURST SYNCHRONOUS DRAM AUTO/SELF REFRESH COMMON 1,2,4,8 1 1 8000000 8.3886 M SYNCHRONOUS 3-STATE YES 1,2,4,8,FP 2 mA 100 µA 3.6 V 3 V CMOS INDUSTRIAL R-PDSO-G54 Not Qualified e3 3 85 °C -40 °C 260 10 54 PLASTIC/EPOXY TSOP2 TSOP54,.46,32 RECTANGULAR SMALL OUTLINE, THIN PROFILE YES Matte Tin (Sn) - annealed GULL WING 800 µm DUAL 1.2 mm 22.22 mm 10.16 mm 1171552762 TSOP2 TSOP2, TSOP54,.46,32 54 compliant EAR99 8542.32.00.02 20 weeks Integrated Silicon Solution Inc.
AS4C32M16D2A-25BAN
Alliance Memory Inc
查询价格和库存
Yes Active 536.8709 Mbit 16 32MX16 1.8 V 400 ps FOUR BANK PAGE BURST SYNCHRONOUS DRAM AUTO/SELF REFRESH 1 1 32000000 33.5544 M SYNCHRONOUS YES 1.9 V 1.7 V CMOS OTHER R-PBGA-B84 3 85 °C NOT SPECIFIED NOT SPECIFIED 84 PLASTIC/EPOXY TFBGA RECTANGULAR GRID ARRAY, THIN PROFILE, FINE PITCH YES BALL 800 µm BOTTOM 1.2 mm 12.5 mm 8 mm 8088787753 TFBGA, compliant EAR99 8542.32.00.28 16 weeks
AS4C64M16D2B-25BCN
Alliance Memory Inc
查询价格和库存
Yes Active 1.0737 Gbit 16 64MX16 1.8 V 400 ps 400 MHz 8192 MULTI BANK PAGE BURST DDR2 DRAM AUTO/SELF REFRESH COMMON 4,8 1 1 64000000 67.1089 M SYNCHRONOUS 3-STATE YES 4,8 30 mA 1.7 V 250 µA 1.9 V 1.7 V CMOS OTHER R-PBGA-B84 e1 3 95 °C NOT SPECIFIED NOT SPECIFIED 84 PLASTIC/EPOXY TFBGA BGA84,9X15,32 RECTANGULAR GRID ARRAY, THIN PROFILE, FINE PITCH YES Tin/Silver/Copper (Sn/Ag/Cu) BALL 800 µm BOTTOM 1.2 mm 12.5 mm 8 mm