DRAM封装型号_DRAM厂家价格-bom2buy

型号

型号					Most Relevant								Technical																			Compliance			Operating Conditions						Physical											Dimensions			Other
型号	数据手册	单价/库存	风险等级	是否Rohs认证	生命周期	内存密度	内存宽度	组织	标称供电电压 (Vsup)	最长访问时间	最大时钟频率 (fCLK)	刷新周期	访问模式	内存集成电路类型	其他特性	I/O 类型	交错的突发长度	功能数量	端口数量	字数代码	字数	工作模式	输出特性	自我刷新	连续突发长度	最大待机电流	最小待机电流	最大压摆率	最大供电电压 (Vsup)	最小供电电压 (Vsup)	技术	温度等级	JESD-30 代码	认证状态	JESD-609代码	湿度敏感等级	最高工作温度	最低工作温度	峰值回流温度（摄氏度）	筛选级别	处于峰值回流温度下的最长时间	端子数量	封装主体材料	封装代码	封装等效代码	封装形状	封装形式	表面贴装	端子面层	端子形式	端子节距	端子位置	座面最大高度	长度	宽度	mfrid	是否符合REACH标准	YTEOL	包装说明	Country Of Origin	ECCN代码	HTS代码	Date Of Intro	零件包装代码	针数
S27KS0642GABHI020 Infineon Technologies AG		查询价格和库存		Yes	Active	67.1089 Mbit	8	8MX8	1.8 V		200 MHz			HYPERRAM		COMMON		1	1	8000000	8.3886 M	SYNCHRONOUS	3-STATE	YES		220 µA		25 µA	2 V	1.7 V	CMOS		R-PBGA-B24			3	85 °C	-40 °C	NOT SPECIFIED		NOT SPECIFIED	24	PLASTIC/EPOXY	VBGA	BGA24,5X5,40	RECTANGULAR	GRID ARRAY, VERY THIN PROFILE	YES		BALL	1 mm	BOTTOM	1 mm	8 mm	6 mm	2065	compliant	5.35
IS43R16160F-5BLI Integrated Silicon Solution Inc		查询价格和库存		Yes	Active	268.4355 Mbit	16	16MX16	2.5 V	700 ps	200 MHz		FOUR BANK PAGE BURST	DDR1 DRAM		COMMON	2,4,8	1	1	16000000	16.7772 M	SYNCHRONOUS	3-STATE	YES	2,4,8	30 mA		220 µA	2.7 V	2.3 V	CMOS	INDUSTRIAL	R-PBGA-B60				85 °C	-40 °C	NOT SPECIFIED		NOT SPECIFIED	60	PLASTIC/EPOXY	TBGA	BGA60,9X12,40/32	RECTANGULAR	GRID ARRAY, THIN PROFILE	YES		BALL	1 mm	BOTTOM	1.2 mm	13 mm	8 mm	2070	compliant	4.25	TBGA, BGA60,9X12,40/32	Mainland China, Taiwan	EAR99	8542.32.00.24
MT40A512M16TB-062E:J Micron Technology Inc		查询价格和库存			Active	8.5899 Gbit	16	512MX16	1.2 V		1.6 GHz	8192	MULTI BANK PAGE BURST	DDR4 DRAM		COMMON	8	1	1	512000000	536.8709 M	SYNCHRONOUS		YES	8				1.26 V	1.14 V	CMOS		R-PBGA-B96				95 °C					96	PLASTIC/EPOXY	TFBGA	BGA96,9X16,32	RECTANGULAR	GRID ARRAY, THIN PROFILE, FINE PITCH	YES		BALL	800 µm	BOTTOM	1.2 mm	13 mm	7.5 mm	2190	compliant	5.1
IS43DR16320E-25DBL Integrated Silicon Solution Inc		查询价格和库存		Yes	Active	536.8709 Mbit	16	32MX16	1.8 V	400 ps			FOUR BANK PAGE BURST	DDR2 DRAM	AUTO/SELF REFRESH			1	1	32000000	33.5544 M	SYNCHRONOUS		YES					1.9 V	1.7 V	CMOS	OTHER	R-PBGA-B84				85 °C		NOT SPECIFIED		NOT SPECIFIED	84	PLASTIC/EPOXY	TFBGA		RECTANGULAR	GRID ARRAY, THIN PROFILE, FINE PITCH	YES		BALL	800 µm	BOTTOM	1.2 mm	10.5 mm	8 mm	2070	compliant	4.75	TFBGA,	Mainland China, Taiwan	EAR99	8542.32.00.28
AS4C1G8D3LA-10BCN Alliance Memory Inc		查询价格和库存		Yes	Active	8.5899 Gbit	8	1GX8	1.35 V				MULTI BANK PAGE BURST	DDR DRAM MODULE	AUTO/SELF REFRESH			1	1	1000000000	1.0737 G	SYNCHRONOUS		YES					1.45 V	1.283 V	CMOS	OTHER	R-PBGA-B78			3	95 °C					78	PLASTIC/EPOXY	TFBGA		RECTANGULAR	GRID ARRAY, THIN PROFILE, FINE PITCH	YES		BALL	800 µm	BOTTOM	1.2 mm	10.6 mm	9 mm	1689	compliant	5.15	FBGA-78	Taiwan	EAR99	8542.32.00.36	2019-03-07
IS43DR16320E-25DBLI Integrated Silicon Solution Inc		查询价格和库存		Yes	Active	536.8709 Mbit	16	32MX16	1.8 V	400 ps			FOUR BANK PAGE BURST	DDR2 DRAM	AUTO/SELF REFRESH			1	1	32000000	33.5544 M	SYNCHRONOUS		YES					1.9 V	1.7 V	CMOS	INDUSTRIAL	R-PBGA-B84				85 °C	-40 °C				84	PLASTIC/EPOXY	TFBGA		RECTANGULAR	GRID ARRAY, THIN PROFILE, FINE PITCH	YES		BALL	800 µm	BOTTOM	1.2 mm	10.5 mm	8 mm	2070	compliant	4.75	TFBGA,	Mainland China, Taiwan	EAR99	8542.32.00.28
IS43DR16320E-3DBLI Integrated Silicon Solution Inc		查询价格和库存		Yes	Active	536.8709 Mbit	16	32MX16	1.8 V	450 ps			FOUR BANK PAGE BURST	DDR2 DRAM	AUTO/SELF REFRESH			1	1	32000000	33.5544 M	SYNCHRONOUS		YES					1.9 V	1.7 V	CMOS	INDUSTRIAL	R-PBGA-B84				85 °C	-40 °C	NOT SPECIFIED		NOT SPECIFIED	84	PLASTIC/EPOXY	TFBGA		RECTANGULAR	GRID ARRAY, THIN PROFILE, FINE PITCH	YES		BALL	800 µm	BOTTOM	1.2 mm	10.5 mm	8 mm	2070	compliant	4.75	TFBGA,	Mainland China, Taiwan	EAR99	8542.32.00.28
IS43DR16320E-3DBL Integrated Silicon Solution Inc		查询价格和库存		Yes	Active	536.8709 Mbit	16	32MX16	1.8 V	450 ps			FOUR BANK PAGE BURST	DDR2 DRAM	AUTO/SELF REFRESH			1	1	32000000	33.5544 M	SYNCHRONOUS		YES					1.9 V	1.7 V	CMOS	OTHER	R-PBGA-B84				85 °C		NOT SPECIFIED		NOT SPECIFIED	84	PLASTIC/EPOXY	TFBGA		RECTANGULAR	GRID ARRAY, THIN PROFILE, FINE PITCH	YES		BALL	800 µm	BOTTOM	1.2 mm	10.5 mm	8 mm	2070	compliant	4.75	TFBGA,	Mainland China, Taiwan	EAR99	8542.32.00.28
IS42S32800J-7BL Integrated Silicon Solution Inc		查询价格和库存		Yes	Active	268.4355 Mbit	32	8MX32	3.3 V	5.4 ns	143 MHz	4096	FOUR BANK PAGE BURST	SYNCHRONOUS DRAM	AUTO/SELF REFRESH	COMMON	1,2,4,8	1	1	8000000	8.3886 M	SYNCHRONOUS	3-STATE	YES	1,2,4,8,FP	4 mA		170 µA	3.6 V	3 V	CMOS	COMMERCIAL	R-PBGA-B90		e1	3	70 °C		260		10	90	PLASTIC/EPOXY	TFBGA	BGA90,9X15,32	RECTANGULAR	GRID ARRAY, THIN PROFILE, FINE PITCH	YES	Tin/Silver/Copper (Sn/Ag/Cu)	BALL	800 µm	BOTTOM	1.2 mm	13 mm	8 mm	2070	compliant	4	TFBGA,	Mainland China, Taiwan	EAR99	8542.32.00.24
AS4C4M16SA-6BIN Alliance Memory Inc		查询价格和库存		Yes	Active	67.1089 Mbit	16	4MX16	3.3 V	5.4 ns			FOUR BANK PAGE BURST	SYNCHRONOUS DRAM	AUTO/SELF REFRESH			1	1	4000000	4.1943 M	SYNCHRONOUS		YES					3.6 V	3 V	CMOS	INDUSTRIAL	S-PBGA-B54		e1	3	85 °C	-40 °C				54	PLASTIC/EPOXY	TFBGA		SQUARE	GRID ARRAY, THIN PROFILE, FINE PITCH	YES	TIN SILVER COPPER	BALL	800 µm	BOTTOM	1.2 mm	8 mm	8 mm	1689	compliant	4	TFBGA-54	Taiwan	EAR99	8542.32.00.02
IS43R16320F-6TLI Integrated Silicon Solution Inc		查询价格和库存		Yes	Active	536.8709 Mbit	16	32MX16	2.5 V	700 ps			FOUR BANK PAGE BURST	DDR1 DRAM	PROGRAMMABLE CAS LATENCY; AUTO/SELF REFRESH			1	1	32000000	33.5544 M	SYNCHRONOUS		YES					2.7 V	2.3 V	CMOS	INDUSTRIAL	R-PDSO-G66				85 °C	-40 °C	NOT SPECIFIED		NOT SPECIFIED	66	PLASTIC/EPOXY	TSOP2		RECTANGULAR	SMALL OUTLINE, THIN PROFILE	YES		GULL WING	650 µm	DUAL	1.2 mm	22.22 mm	10.16 mm	2070	compliant	4.25	TSOP2,	Mainland China, Taiwan	EAR99	8542.32.00.28
AS4C32M16D2A-25BIN Alliance Memory Inc		查询价格和库存		Yes	Active	536.8709 Mbit	16	32MX16	1.8 V	400 ps	400 MHz	8192	FOUR BANK PAGE BURST	DDR2 DRAM	AUTO/SELF REFRESH	COMMON	4,8	1	1	32000000	33.5544 M	SYNCHRONOUS	3-STATE	YES	4,8	8 mA		180 µA	1.9 V	1.7 V	CMOS	INDUSTRIAL	R-PBGA-B84	Not Qualified		3	85 °C	-40 °C				84	PLASTIC/EPOXY	TFBGA	BGA84,9X15,32	RECTANGULAR	GRID ARRAY, THIN PROFILE, FINE PITCH	YES		BALL	800 µm	BOTTOM	1.2 mm	12.5 mm	8 mm	1689	compliant	4.75	8 X 12.50 MM, 1.20 MM HEIGHT, HALOGEN FREE AND ROHS COMPLIANT, FBGA-84	Taiwan	EAR99	8542.32.00.28
AS4C4M16SA-6BAN Alliance Memory Inc		查询价格和库存		Yes	Active	67.1089 Mbit	16	4MX16	3.3 V	5.4 ns	166 MHz	4096	FOUR BANK PAGE BURST	SYNCHRONOUS DRAM	AUTO REFRESH/SELF REFRESH	COMMON	1,2,4,8	1	1	4000000	4.1943 M	SYNCHRONOUS	3-STATE	YES	1,2,4,8,FP	30 mA		75 µA	3.6 V	3 V	CMOS	INDUSTRIAL	S-PBGA-B54		e1	3	105 °C	-40 °C		AEC-Q100		54	PLASTIC/EPOXY	TFBGA	BGA54,9X9,32	SQUARE	GRID ARRAY, THIN PROFILE, FINE PITCH	YES	TIN SILVER COPPER	BALL	800 µm	BOTTOM	1.2 mm	8 mm	8 mm	1689	compliant	4	FBGA-54	Taiwan	EAR99	8542.32.00.02
IS42S32400F-7TL Integrated Silicon Solution Inc		查询价格和库存		Yes	End Of Life	134.2177 Mbit	32	4MX32	3.3 V	5.4 ns	143 MHz	4096	FOUR BANK PAGE BURST	SYNCHRONOUS DRAM	AUTO/SELF REFRESH	COMMON	1,2,4,8	1	1	4000000	4.1943 M	SYNCHRONOUS	3-STATE	YES	1,2,4,8,FP	2 mA		160 µA	3.6 V	3 V	CMOS	COMMERCIAL	R-PDSO-G86	Not Qualified	e3	3	70 °C		260		30	86	PLASTIC/EPOXY	TSOP2	TSSOP86,.46,20	RECTANGULAR	SMALL OUTLINE, THIN PROFILE	YES	MATTE TIN	GULL WING	500 µm	DUAL	1.2 mm	22.22 mm	10.16 mm	2070	compliant	0.89	TSOP2, TSSOP86,.46,20	Mainland China, Taiwan	EAR99	8542.32.00.02		TSOP2	86
IS43R16320F-6TL Integrated Silicon Solution Inc		查询价格和库存		Yes	Active	536.8709 Mbit	16	32MX16	2.5 V	700 ps			FOUR BANK PAGE BURST	DDR1 DRAM	PROGRAMMABLE CAS LATENCY; AUTO/SELF REFRESH			1	1	32000000	33.5544 M	SYNCHRONOUS		YES					2.7 V	2.3 V	CMOS	COMMERCIAL	R-PDSO-G66				70 °C		NOT SPECIFIED		NOT SPECIFIED	66	PLASTIC/EPOXY	TSOP2		RECTANGULAR	SMALL OUTLINE, THIN PROFILE	YES		GULL WING	650 µm	DUAL	1.2 mm	22.22 mm	10.16 mm	2070	compliant	4.25	TSOP2,	Mainland China, Taiwan	EAR99	8542.32.00.28
AS4C128M16D3LC-12BIN Alliance Memory Inc		查询价格和库存		Yes	Active	2.1475 Gbit	16	128MX16	1.35 V		800 MHz	8192	MULTI BANK PAGE BURST	DDR3L DRAM	AUTO REFRESH, SELF REFRESH	COMMON	4,8	1	1	128000000	134.2177 M	SYNCHRONOUS	3-STATE	YES	4,8	15 mA	1.283 V	240 µA	1.45 V	1.283 V	CMOS	INDUSTRIAL	R-PBGA-B96				95 °C	-40 °C				96	PLASTIC/EPOXY	VFBGA	BGA96,9X16,32	RECTANGULAR	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	YES		BALL	800 µm	BOTTOM	1 mm	13 mm	7.5 mm	1689	compliant	5.1	FBGA-96		EAR99	8542.32.00.36
IS42S16160J-7BLI Integrated Silicon Solution Inc		查询价格和库存		Yes	Active	268.4355 Mbit	16	16MX16	3.3 V	7 ns			FOUR BANK PAGE BURST	SYNCHRONOUS DRAM	AUTO/SELF REFRESH			1	1	16000000	16.7772 M	SYNCHRONOUS		YES					3.6 V	3 V	CMOS	INDUSTRIAL	S-PBGA-B54		e1		85 °C	-40 °C	260			54	PLASTIC/EPOXY	TFBGA		SQUARE	GRID ARRAY, THIN PROFILE, FINE PITCH	YES	TIN SILVER COPPER	BALL	800 µm	BOTTOM	1.2 mm	8 mm	8 mm	2070	compliant	4	TFBGA,	Mainland China, Taiwan	EAR99	8542.32.00.24
AS4C128M16D3LC-12BCN Alliance Memory Inc		查询价格和库存		Yes	Active	2.1475 Gbit	16	128MX16	1.35 V		800 MHz	8192	MULTI BANK PAGE BURST	DDR3L DRAM	AUTO REFRESH, SELF REFRESH	COMMON	4,8	1	1	128000000	134.2177 M	SYNCHRONOUS	3-STATE	YES	4,8	15 mA	1.283 V	240 µA	1.45 V	1.283 V	CMOS	OTHER	R-PBGA-B96				95 °C					96	PLASTIC/EPOXY	VFBGA	BGA96,9X16,32	RECTANGULAR	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	YES		BALL	800 µm	BOTTOM	1 mm	13 mm	7.5 mm	1689	compliant	5.1	FBGA-96		EAR99	8542.32.00.36
MT60B2G8HB-48B:A Micron Technology Inc		查询价格和库存			End Of Life	17.1799 Gbit	8	2GX8	1.1 V		2.4038 GHz	8192	MULTI BANK PAGE BURST	DDR5 DRAM	SELF REFRESH	COMMON		1	1	2000000000	2.1475 G	SYNCHRONOUS	3-STATE	YES							CMOS		R-PBGA-B82				95 °C					82	PLASTIC/EPOXY	VFBGA	BGA82,11X13,32	RECTANGULAR	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	YES		BALL	800 µm	BOTTOM	1 mm	11 mm	9 mm	2190	compliant	0.48
AS4C16M16SA-7BCN Alliance Memory Inc		查询价格和库存		Yes	Active	268.4355 Mbit	16	16MX16	3.3 V	5.4 ns	143 MHz	8192	FOUR BANK PAGE BURST	SYNCHRONOUS DRAM	AUTO/SELF REFRESH	COMMON	1,2,4,8	1	1	16000000	16.7772 M	SYNCHRONOUS		YES	1,2,4,8,FP	20 mA		55 µA	3.6 V	3 V	CMOS	COMMERCIAL	S-PBGA-B54			3	70 °C					54	PLASTIC/EPOXY	TFBGA	BGA54,9X9,32	SQUARE	GRID ARRAY, THIN PROFILE, FINE PITCH	YES		BALL	800 µm	BOTTOM	1.2 mm	8 mm	8 mm	1689	compliant	4	TFBGA-54	Taiwan	EAR99	8542.32.00.24

型号					Most Relevant								Technical																			Compliance			Operating Conditions						Physical											Dimensions			Other
型号	数据手册	单价/库存	风险等级	是否Rohs认证	生命周期	内存密度	内存宽度	组织	标称供电电压 (Vsup)	最长访问时间	最大时钟频率 (fCLK)	刷新周期	访问模式	内存集成电路类型	其他特性	I/O 类型	交错的突发长度	功能数量	端口数量	字数代码	字数	工作模式	输出特性	自我刷新	连续突发长度	最大待机电流	最小待机电流	最大压摆率	最大供电电压 (Vsup)	最小供电电压 (Vsup)	技术	温度等级	JESD-30 代码	认证状态	JESD-609代码	湿度敏感等级	最高工作温度	最低工作温度	峰值回流温度（摄氏度）	筛选级别	处于峰值回流温度下的最长时间	端子数量	封装主体材料	封装代码	封装等效代码	封装形状	封装形式	表面贴装	端子面层	端子形式	端子节距	端子位置	座面最大高度	长度	宽度	mfrid	是否符合REACH标准	YTEOL	包装说明	Country Of Origin	ECCN代码	HTS代码	Date Of Intro	零件包装代码	针数
S27KS0642GABHI020 Infineon Technologies AG		查询价格和库存		Yes	Active	67.1089 Mbit	8	8MX8	1.8 V		200 MHz			HYPERRAM		COMMON		1	1	8000000	8.3886 M	SYNCHRONOUS	3-STATE	YES		220 µA		25 µA	2 V	1.7 V	CMOS		R-PBGA-B24			3	85 °C	-40 °C	NOT SPECIFIED		NOT SPECIFIED	24	PLASTIC/EPOXY	VBGA	BGA24,5X5,40	RECTANGULAR	GRID ARRAY, VERY THIN PROFILE	YES		BALL	1 mm	BOTTOM	1 mm	8 mm	6 mm	2065	compliant	5.35
IS43R16160F-5BLI Integrated Silicon Solution Inc		查询价格和库存		Yes	Active	268.4355 Mbit	16	16MX16	2.5 V	700 ps	200 MHz		FOUR BANK PAGE BURST	DDR1 DRAM		COMMON	2,4,8	1	1	16000000	16.7772 M	SYNCHRONOUS	3-STATE	YES	2,4,8	30 mA		220 µA	2.7 V	2.3 V	CMOS	INDUSTRIAL	R-PBGA-B60				85 °C	-40 °C	NOT SPECIFIED		NOT SPECIFIED	60	PLASTIC/EPOXY	TBGA	BGA60,9X12,40/32	RECTANGULAR	GRID ARRAY, THIN PROFILE	YES		BALL	1 mm	BOTTOM	1.2 mm	13 mm	8 mm	2070	compliant	4.25	TBGA, BGA60,9X12,40/32	Mainland China, Taiwan	EAR99	8542.32.00.24
MT40A512M16TB-062E:J Micron Technology Inc		查询价格和库存			Active	8.5899 Gbit	16	512MX16	1.2 V		1.6 GHz	8192	MULTI BANK PAGE BURST	DDR4 DRAM		COMMON	8	1	1	512000000	536.8709 M	SYNCHRONOUS		YES	8				1.26 V	1.14 V	CMOS		R-PBGA-B96				95 °C					96	PLASTIC/EPOXY	TFBGA	BGA96,9X16,32	RECTANGULAR	GRID ARRAY, THIN PROFILE, FINE PITCH	YES		BALL	800 µm	BOTTOM	1.2 mm	13 mm	7.5 mm	2190	compliant	5.1
IS43DR16320E-25DBL Integrated Silicon Solution Inc		查询价格和库存		Yes	Active	536.8709 Mbit	16	32MX16	1.8 V	400 ps			FOUR BANK PAGE BURST	DDR2 DRAM	AUTO/SELF REFRESH			1	1	32000000	33.5544 M	SYNCHRONOUS		YES					1.9 V	1.7 V	CMOS	OTHER	R-PBGA-B84				85 °C		NOT SPECIFIED		NOT SPECIFIED	84	PLASTIC/EPOXY	TFBGA		RECTANGULAR	GRID ARRAY, THIN PROFILE, FINE PITCH	YES		BALL	800 µm	BOTTOM	1.2 mm	10.5 mm	8 mm	2070	compliant	4.75	TFBGA,	Mainland China, Taiwan	EAR99	8542.32.00.28
AS4C1G8D3LA-10BCN Alliance Memory Inc		查询价格和库存		Yes	Active	8.5899 Gbit	8	1GX8	1.35 V				MULTI BANK PAGE BURST	DDR DRAM MODULE	AUTO/SELF REFRESH			1	1	1000000000	1.0737 G	SYNCHRONOUS		YES					1.45 V	1.283 V	CMOS	OTHER	R-PBGA-B78			3	95 °C					78	PLASTIC/EPOXY	TFBGA		RECTANGULAR	GRID ARRAY, THIN PROFILE, FINE PITCH	YES		BALL	800 µm	BOTTOM	1.2 mm	10.6 mm	9 mm	1689	compliant	5.15	FBGA-78	Taiwan	EAR99	8542.32.00.36	2019-03-07
IS43DR16320E-25DBLI Integrated Silicon Solution Inc		查询价格和库存		Yes	Active	536.8709 Mbit	16	32MX16	1.8 V	400 ps			FOUR BANK PAGE BURST	DDR2 DRAM	AUTO/SELF REFRESH			1	1	32000000	33.5544 M	SYNCHRONOUS		YES					1.9 V	1.7 V	CMOS	INDUSTRIAL	R-PBGA-B84				85 °C	-40 °C				84	PLASTIC/EPOXY	TFBGA		RECTANGULAR	GRID ARRAY, THIN PROFILE, FINE PITCH	YES		BALL	800 µm	BOTTOM	1.2 mm	10.5 mm	8 mm	2070	compliant	4.75	TFBGA,	Mainland China, Taiwan	EAR99	8542.32.00.28
IS43DR16320E-3DBLI Integrated Silicon Solution Inc		查询价格和库存		Yes	Active	536.8709 Mbit	16	32MX16	1.8 V	450 ps			FOUR BANK PAGE BURST	DDR2 DRAM	AUTO/SELF REFRESH			1	1	32000000	33.5544 M	SYNCHRONOUS		YES					1.9 V	1.7 V	CMOS	INDUSTRIAL	R-PBGA-B84				85 °C	-40 °C	NOT SPECIFIED		NOT SPECIFIED	84	PLASTIC/EPOXY	TFBGA		RECTANGULAR	GRID ARRAY, THIN PROFILE, FINE PITCH	YES		BALL	800 µm	BOTTOM	1.2 mm	10.5 mm	8 mm	2070	compliant	4.75	TFBGA,	Mainland China, Taiwan	EAR99	8542.32.00.28
IS43DR16320E-3DBL Integrated Silicon Solution Inc		查询价格和库存		Yes	Active	536.8709 Mbit	16	32MX16	1.8 V	450 ps			FOUR BANK PAGE BURST	DDR2 DRAM	AUTO/SELF REFRESH			1	1	32000000	33.5544 M	SYNCHRONOUS		YES					1.9 V	1.7 V	CMOS	OTHER	R-PBGA-B84				85 °C		NOT SPECIFIED		NOT SPECIFIED	84	PLASTIC/EPOXY	TFBGA		RECTANGULAR	GRID ARRAY, THIN PROFILE, FINE PITCH	YES		BALL	800 µm	BOTTOM	1.2 mm	10.5 mm	8 mm	2070	compliant	4.75	TFBGA,	Mainland China, Taiwan	EAR99	8542.32.00.28
IS42S32800J-7BL Integrated Silicon Solution Inc		查询价格和库存		Yes	Active	268.4355 Mbit	32	8MX32	3.3 V	5.4 ns	143 MHz	4096	FOUR BANK PAGE BURST	SYNCHRONOUS DRAM	AUTO/SELF REFRESH	COMMON	1,2,4,8	1	1	8000000	8.3886 M	SYNCHRONOUS	3-STATE	YES	1,2,4,8,FP	4 mA		170 µA	3.6 V	3 V	CMOS	COMMERCIAL	R-PBGA-B90		e1	3	70 °C		260		10	90	PLASTIC/EPOXY	TFBGA	BGA90,9X15,32	RECTANGULAR	GRID ARRAY, THIN PROFILE, FINE PITCH	YES	Tin/Silver/Copper (Sn/Ag/Cu)	BALL	800 µm	BOTTOM	1.2 mm	13 mm	8 mm	2070	compliant	4	TFBGA,	Mainland China, Taiwan	EAR99	8542.32.00.24
AS4C4M16SA-6BIN Alliance Memory Inc		查询价格和库存		Yes	Active	67.1089 Mbit	16	4MX16	3.3 V	5.4 ns			FOUR BANK PAGE BURST	SYNCHRONOUS DRAM	AUTO/SELF REFRESH			1	1	4000000	4.1943 M	SYNCHRONOUS		YES					3.6 V	3 V	CMOS	INDUSTRIAL	S-PBGA-B54		e1	3	85 °C	-40 °C				54	PLASTIC/EPOXY	TFBGA		SQUARE	GRID ARRAY, THIN PROFILE, FINE PITCH	YES	TIN SILVER COPPER	BALL	800 µm	BOTTOM	1.2 mm	8 mm	8 mm	1689	compliant	4	TFBGA-54	Taiwan	EAR99	8542.32.00.02
IS43R16320F-6TLI Integrated Silicon Solution Inc		查询价格和库存		Yes	Active	536.8709 Mbit	16	32MX16	2.5 V	700 ps			FOUR BANK PAGE BURST	DDR1 DRAM	PROGRAMMABLE CAS LATENCY; AUTO/SELF REFRESH			1	1	32000000	33.5544 M	SYNCHRONOUS		YES					2.7 V	2.3 V	CMOS	INDUSTRIAL	R-PDSO-G66				85 °C	-40 °C	NOT SPECIFIED		NOT SPECIFIED	66	PLASTIC/EPOXY	TSOP2		RECTANGULAR	SMALL OUTLINE, THIN PROFILE	YES		GULL WING	650 µm	DUAL	1.2 mm	22.22 mm	10.16 mm	2070	compliant	4.25	TSOP2,	Mainland China, Taiwan	EAR99	8542.32.00.28
AS4C32M16D2A-25BIN Alliance Memory Inc		查询价格和库存		Yes	Active	536.8709 Mbit	16	32MX16	1.8 V	400 ps	400 MHz	8192	FOUR BANK PAGE BURST	DDR2 DRAM	AUTO/SELF REFRESH	COMMON	4,8	1	1	32000000	33.5544 M	SYNCHRONOUS	3-STATE	YES	4,8	8 mA		180 µA	1.9 V	1.7 V	CMOS	INDUSTRIAL	R-PBGA-B84	Not Qualified		3	85 °C	-40 °C				84	PLASTIC/EPOXY	TFBGA	BGA84,9X15,32	RECTANGULAR	GRID ARRAY, THIN PROFILE, FINE PITCH	YES		BALL	800 µm	BOTTOM	1.2 mm	12.5 mm	8 mm	1689	compliant	4.75	8 X 12.50 MM, 1.20 MM HEIGHT, HALOGEN FREE AND ROHS COMPLIANT, FBGA-84	Taiwan	EAR99	8542.32.00.28
AS4C4M16SA-6BAN Alliance Memory Inc		查询价格和库存		Yes	Active	67.1089 Mbit	16	4MX16	3.3 V	5.4 ns	166 MHz	4096	FOUR BANK PAGE BURST	SYNCHRONOUS DRAM	AUTO REFRESH/SELF REFRESH	COMMON	1,2,4,8	1	1	4000000	4.1943 M	SYNCHRONOUS	3-STATE	YES	1,2,4,8,FP	30 mA		75 µA	3.6 V	3 V	CMOS	INDUSTRIAL	S-PBGA-B54		e1	3	105 °C	-40 °C		AEC-Q100		54	PLASTIC/EPOXY	TFBGA	BGA54,9X9,32	SQUARE	GRID ARRAY, THIN PROFILE, FINE PITCH	YES	TIN SILVER COPPER	BALL	800 µm	BOTTOM	1.2 mm	8 mm	8 mm	1689	compliant	4	FBGA-54	Taiwan	EAR99	8542.32.00.02
IS42S32400F-7TL Integrated Silicon Solution Inc		查询价格和库存		Yes	End Of Life	134.2177 Mbit	32	4MX32	3.3 V	5.4 ns	143 MHz	4096	FOUR BANK PAGE BURST	SYNCHRONOUS DRAM	AUTO/SELF REFRESH	COMMON	1,2,4,8	1	1	4000000	4.1943 M	SYNCHRONOUS	3-STATE	YES	1,2,4,8,FP	2 mA		160 µA	3.6 V	3 V	CMOS	COMMERCIAL	R-PDSO-G86	Not Qualified	e3	3	70 °C		260		30	86	PLASTIC/EPOXY	TSOP2	TSSOP86,.46,20	RECTANGULAR	SMALL OUTLINE, THIN PROFILE	YES	MATTE TIN	GULL WING	500 µm	DUAL	1.2 mm	22.22 mm	10.16 mm	2070	compliant	0.89	TSOP2, TSSOP86,.46,20	Mainland China, Taiwan	EAR99	8542.32.00.02		TSOP2	86
IS43R16320F-6TL Integrated Silicon Solution Inc		查询价格和库存		Yes	Active	536.8709 Mbit	16	32MX16	2.5 V	700 ps			FOUR BANK PAGE BURST	DDR1 DRAM	PROGRAMMABLE CAS LATENCY; AUTO/SELF REFRESH			1	1	32000000	33.5544 M	SYNCHRONOUS		YES					2.7 V	2.3 V	CMOS	COMMERCIAL	R-PDSO-G66				70 °C		NOT SPECIFIED		NOT SPECIFIED	66	PLASTIC/EPOXY	TSOP2		RECTANGULAR	SMALL OUTLINE, THIN PROFILE	YES		GULL WING	650 µm	DUAL	1.2 mm	22.22 mm	10.16 mm	2070	compliant	4.25	TSOP2,	Mainland China, Taiwan	EAR99	8542.32.00.28
AS4C128M16D3LC-12BIN Alliance Memory Inc		查询价格和库存		Yes	Active	2.1475 Gbit	16	128MX16	1.35 V		800 MHz	8192	MULTI BANK PAGE BURST	DDR3L DRAM	AUTO REFRESH, SELF REFRESH	COMMON	4,8	1	1	128000000	134.2177 M	SYNCHRONOUS	3-STATE	YES	4,8	15 mA	1.283 V	240 µA	1.45 V	1.283 V	CMOS	INDUSTRIAL	R-PBGA-B96				95 °C	-40 °C				96	PLASTIC/EPOXY	VFBGA	BGA96,9X16,32	RECTANGULAR	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	YES		BALL	800 µm	BOTTOM	1 mm	13 mm	7.5 mm	1689	compliant	5.1	FBGA-96		EAR99	8542.32.00.36
IS42S16160J-7BLI Integrated Silicon Solution Inc		查询价格和库存		Yes	Active	268.4355 Mbit	16	16MX16	3.3 V	7 ns			FOUR BANK PAGE BURST	SYNCHRONOUS DRAM	AUTO/SELF REFRESH			1	1	16000000	16.7772 M	SYNCHRONOUS		YES					3.6 V	3 V	CMOS	INDUSTRIAL	S-PBGA-B54		e1		85 °C	-40 °C	260			54	PLASTIC/EPOXY	TFBGA		SQUARE	GRID ARRAY, THIN PROFILE, FINE PITCH	YES	TIN SILVER COPPER	BALL	800 µm	BOTTOM	1.2 mm	8 mm	8 mm	2070	compliant	4	TFBGA,	Mainland China, Taiwan	EAR99	8542.32.00.24
AS4C128M16D3LC-12BCN Alliance Memory Inc		查询价格和库存		Yes	Active	2.1475 Gbit	16	128MX16	1.35 V		800 MHz	8192	MULTI BANK PAGE BURST	DDR3L DRAM	AUTO REFRESH, SELF REFRESH	COMMON	4,8	1	1	128000000	134.2177 M	SYNCHRONOUS	3-STATE	YES	4,8	15 mA	1.283 V	240 µA	1.45 V	1.283 V	CMOS	OTHER	R-PBGA-B96				95 °C					96	PLASTIC/EPOXY	VFBGA	BGA96,9X16,32	RECTANGULAR	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	YES		BALL	800 µm	BOTTOM	1 mm	13 mm	7.5 mm	1689	compliant	5.1	FBGA-96		EAR99	8542.32.00.36
MT60B2G8HB-48B:A Micron Technology Inc		查询价格和库存			End Of Life	17.1799 Gbit	8	2GX8	1.1 V		2.4038 GHz	8192	MULTI BANK PAGE BURST	DDR5 DRAM	SELF REFRESH	COMMON		1	1	2000000000	2.1475 G	SYNCHRONOUS	3-STATE	YES							CMOS		R-PBGA-B82				95 °C					82	PLASTIC/EPOXY	VFBGA	BGA82,11X13,32	RECTANGULAR	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	YES		BALL	800 µm	BOTTOM	1 mm	11 mm	9 mm	2190	compliant	0.48
AS4C16M16SA-7BCN Alliance Memory Inc		查询价格和库存		Yes	Active	268.4355 Mbit	16	16MX16	3.3 V	5.4 ns	143 MHz	8192	FOUR BANK PAGE BURST	SYNCHRONOUS DRAM	AUTO/SELF REFRESH	COMMON	1,2,4,8	1	1	16000000	16.7772 M	SYNCHRONOUS		YES	1,2,4,8,FP	20 mA		55 µA	3.6 V	3 V	CMOS	COMMERCIAL	S-PBGA-B54			3	70 °C					54	PLASTIC/EPOXY	TFBGA	BGA54,9X9,32	SQUARE	GRID ARRAY, THIN PROFILE, FINE PITCH	YES		BALL	800 µm	BOTTOM	1.2 mm	8 mm	8 mm	1689	compliant	4	TFBGA-54	Taiwan	EAR99	8542.32.00.24

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