型号 | Most Relevant | Technical | Compliance | Operating Conditions | Physical | Other | |||||||||||||||||||||||||||||||||||||||||||||||||||||
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数据手册 |
单价/库存
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风险等级 | 是否无铅 |
是否Rohs认证
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生命周期 | 集电极-发射极最大电压 | 最大集电极电流 (IC) | 极性/信道类型 |
表面贴装
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配置 | 端子数量 | 最小漏源击穿电压 | 最高频带 | 元件数量 | 最小直流电流增益 (hFE) | 最大漏极电流 (ID) | 最大漏源导通电阻 |
标称过渡频率 (fT)
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其他特性 | 基于收集器的最大容量 | 最大反馈电容 (Crss) | FET 技术 | 工作模式 | 最大功率耗散 (Abs) |
晶体管应用
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晶体管元件材料
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最大关闭时间(toff)
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最大开启时间(吨)
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VCEsat-Max
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JEDEC-95代码 | JESD-30 代码 | JESD-609代码 | 认证状态 |
参考标准
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湿度敏感等级 | 最高工作温度 | 最低工作温度 | 峰值回流温度(摄氏度) |
处于峰值回流温度下的最长时间
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外壳连接 | 封装主体材料 | 封装形状 | 封装形式 |
端子面层
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端子形式
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端子位置
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Source Content uid
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mfrid
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零件包装代码
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包装说明
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针数
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制造商包装代码
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是否符合REACH标准
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Country Of Origin
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ECCN代码
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YTEOL
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HTS代码
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BCP53-16T1G
onsemi
|
查询价格和库存 |
|
Yes | Active | 80 V | 1.5 A | PNP | YES | SINGLE | 4 | 1 | 100 | 50 MHz | 1.5 W | AMPLIFIER | SILICON | 500 mV | TO-261AA | R-PDSO-G4 | e3 | Not Qualified | 1 | 150 °C | -65 °C | 260 | 30 | COLLECTOR | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | Matte Tin (Sn) - annealed | GULL WING | DUAL | BCP53-16T1G | 2260 | SOT-223 (TO-261) 4 LEAD | TO-261, 4 PIN | 4 | 0.0318 | compliant | Malaysia | EAR99 | 4 | ||||||||||||||||
BSS123LT1G
onsemi
|
查询价格和库存 |
|
Yes | Active | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 3 | 100 V | 1 | 170 mA | 6 Ω | 4 pF | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 225 mW | SILICON | TO-236 | R-PDSO-G3 | e3 | Not Qualified | 1 | 150 °C | -55 °C | 260 | 30 | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | Matte Tin (Sn) - annealed | GULL WING | DUAL | BSS123LT1G | 2260 | SOT-23 (TO-236) 3 LEAD | ROHS COMPLIANT, CASE 318-08, 3 PIN | 3 | 318-08 | compliant | Mainland China | EAR99 | 6.5 | 8541.29.00.95 | ||||||||||||||||
BCW66GLT1G
onsemi
|
查询价格和库存 |
|
Yes | Active | 45 V | 800 mA | NPN | YES | SINGLE | 3 | 1 | 60 | 100 MHz | 225 mW | SILICON | 400 ns | 100 ns | TO-236AB | R-PDSO-G3 | e3 | Not Qualified | 1 | 150 °C | 260 | 40 | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | Matte Tin (Sn) - annealed | GULL WING | DUAL | BCW66GLT1G | 2260 | SOT-23 (TO-236) 3 LEAD | CASE 318-08, TO-236, 3 PIN | 3 | 318-08 | compliant | Mainland China | EAR99 | 7 | ||||||||||||||||||
MJD32CRLG
onsemi
|
查询价格和库存 |
|
Yes | Active | 100 V | 3 A | PNP | YES | SINGLE | 2 | 1 | 10 | 3 MHz | 15 W | AMPLIFIER | SILICON | R-PSSO-G2 | e3 | Not Qualified | 1 | 150 °C | 260 | 30 | COLLECTOR | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | Matte Tin (Sn) - annealed | GULL WING | SINGLE | MJD32CRLG | 2260 | DPAK (SINGLE GAUGE) TO-252 | DPAK-3 | 3 | 369C | not_compliant | Mainland China | EAR99 | 4 | 8541.29.00.95 | ||||||||||||||||||
2N7002Q-7-F
Diodes Incorporated
|
查询价格和库存 |
|
Yes | Yes | Active | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 3 | 60 V | 1 | 170 mA | 5 Ω | HIGH RELIABILITY | 5 pF | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 540 mW | SWITCHING | SILICON | R-PDSO-G3 | e3 | AEC-Q101 | 1 | 150 °C | 260 | 30 | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | MATTE TIN | GULL WING | DUAL | 1926 | compliant | EAR99 | 6.5 | ||||||||||||||||||||||
BCW66GLT3G
onsemi
|
查询价格和库存 |
|
Yes | Active | 45 V | 800 mA | NPN | YES | SINGLE | 3 | 1 | 60 | 100 MHz | 225 mW | SILICON | 400 ns | 100 ns | TO-236AB | R-PDSO-G3 | e3 | Not Qualified | 1 | 150 °C | 260 | 40 | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | Matte Tin (Sn) - annealed | GULL WING | DUAL | BCW66GLT3G | 2260 | SOT-23 | CASE 318-08, TO-236, 3 PIN | 3 | 318-08 | compliant | Mainland China | EAR99 | 7 | ||||||||||||||||||
2N7002TQ-7-F
Diodes Incorporated
|
查询价格和库存 |
|
Yes | Yes | Active | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 3 | 60 V | 1 | 115 mA | 7.5 mΩ | 5 pF | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 150 mW | SWITCHING | SILICON | R-PDSO-G3 | e3 | AEC-Q101; IATF 16949 | 1 | 150 °C | -55 °C | 260 | 30 | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | MATTE TIN | GULL WING | DUAL | 1926 | SOT-523, 3 PIN | compliant | EAR99 | 7.2 | |||||||||||||||||||||
SSM3K7002KFU,LF(T
Toshiba America Electronic Components
|
查询价格和库存 |
|
Active | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE AND RESISTOR | 3 | 60 V | 1 | 400 mA | 1.75 Ω | 1.3 pF | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 700 mW | SWITCHING | SILICON | R-PDSO-G3 | 150 °C | NOT SPECIFIED | NOT SPECIFIED | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | GULL WING | DUAL | 2484 | , | unknown | EAR99 | 6.5 | ||||||||||||||||||||||||||||
BFU530A
NXP Semiconductors
|
查询价格和库存 |
|
Active | 12 V | 40 mA | NPN | YES | SINGLE | 3 | L BAND | 1 | 60 | 11 GHz | LOW NOISE | 0.67 pF | 450 mW | AMPLIFIER | SILICON | TO-236AB | R-PDSO-G3 | AEC-Q101; IEC-60134 | 150 °C | -40 °C | NOT SPECIFIED | NOT SPECIFIED | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | GULL WING | DUAL | BFU530A | 2245 | , | unknown | Mainland China | EAR99 | 4 | ||||||||||||||||||||||
MMBFJ310LT1G
onsemi
|
查询价格和库存 |
|
Yes | Active | N-CHANNEL | YES | SINGLE | 3 | 25 V | ULTRA HIGH FREQUENCY BAND | 1 | 2.5 pF | JUNCTION | DEPLETION MODE | 225 mW | AMPLIFIER | SILICON | TO-236 | R-PDSO-G3 | e3 | Not Qualified | 1 | 150 °C | 260 | 30 | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | Matte Tin (Sn) - annealed | GULL WING | DUAL | MMBFJ310LT1G | 2260 | SOT-23 (TO-236) 3 LEAD | HALOGEN FREE AND ROHS COMPLIANT, CASE 318-08, 3 PIN | 3 | 318-08 | compliant | Mainland China | EAR99 | 6.82 | ||||||||||||||||||
2N7002K-7
Diodes Incorporated
|
查询价格和库存 |
|
Yes | Yes | Active | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 3 | 60 V | 1 | 300 mA | 2 Ω | HIGH RELIABILITY | 5 pF | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 350 mW | SWITCHING | SILICON | R-PDSO-G3 | e3 | Not Qualified | 1 | 150 °C | 260 | 30 | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | MATTE TIN | GULL WING | DUAL | 1926 | 3 | compliant | Mainland China | EAR99 | 6.5 | ||||||||||||||||||||
MMBTA06LT1G
onsemi
|
查询价格和库存 |
|
Yes | Active | 80 V | 500 mA | NPN | YES | SINGLE | 3 | 1 | 100 | 100 MHz | 225 mW | AMPLIFIER | SILICON | TO-236 | R-PDSO-G3 | e3 | Not Qualified | 1 | 150 °C | -55 °C | 260 | 30 | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | Matte Tin (Sn) - annealed | GULL WING | DUAL | MMBTA06LT1G | 2260 | SOT-23 (TO-236) 3 LEAD | HALOGEN FREE AND ROHS COMPLIANT, CASE 318-08, 3 PIN | 3 | 318-08 | compliant | Mainland China | EAR99 | 7 | ||||||||||||||||||
2N2907A
SPC Multicomp
|
查询价格和库存 |
|
Active | 60 V | 600 mA | PNP | NO | SINGLE | 3 | 1 | 40 | 200 MHz | SWITCHING | SILICON | 100 ns | 45 ns | TO-18 | O-MBCY-W3 | METAL | ROUND | CYLINDRICAL | WIRE | BOTTOM | 4165152 | METAL CAN-3 | unknown | EAR99 | 6.5 | |||||||||||||||||||||||||||||||
SMMBTA92LT1G
onsemi
|
查询价格和库存 |
|
Yes | Active | 300 V | 500 mA | PNP | YES | SINGLE | 3 | 1 | 25 | 50 MHz | 300 mW | SILICON | TO-236AF | R-PDSO-G3 | e3 | AEC-Q101 | 1 | 150 °C | 260 | 30 | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | MATTE TIN | GULL WING | DUAL | SMMBTA92LT1G | 2260 | SOT-23 (TO-236) 3 LEAD | HALOGEN FREE AND ROHS COMPLIANT, CASE 318-08, 3 PIN | 3 | 318-08 | compliant | Mainland China | EAR99 | 7 | ||||||||||||||||||||
MMBTA06LT3G
onsemi
|
查询价格和库存 |
|
Yes | Active | 80 V | 500 mA | NPN | YES | SINGLE | 3 | 1 | 100 | 100 MHz | 225 mW | AMPLIFIER | SILICON | TO-236 | R-PDSO-G3 | e3 | Not Qualified | 1 | 150 °C | 260 | 30 | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | Matte Tin (Sn) - annealed | GULL WING | DUAL | MMBTA06LT3G | 2260 | SOT-23 (TO-236) 3 LEAD | HALOGEN FREE AND ROHS COMPLIANT, CASE 318-08, 3 PIN | 3 | 318-08 | compliant | Mainland China | EAR99 | 7 | |||||||||||||||||||
BSS138Q-7-F
Diodes Incorporated
|
查询价格和库存 |
|
Yes | Yes | Active | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 3 | 50 V | 1 | 200 mA | 3.5 Ω | 8 pF | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 300 mW | SWITCHING | SILICON | R-PDSO-G3 | e3 | AEC-Q101; IATF 16949 | 1 | 150 °C | -55 °C | 260 | 30 | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | MATTE TIN | GULL WING | DUAL | 1926 | GREEN, PLASTIC PACKAGE-3 | compliant | EAR99 | 6.5 | |||||||||||||||||||||
BSS138TA
Diodes Incorporated
|
查询价格和库存 |
|
Yes | Yes | Active | N-CHANNEL | YES | SINGLE | 3 | 50 V | 1 | 200 mA | 3.5 Ω | 8 pF | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 360 mW | SWITCHING | SILICON | R-PDSO-G3 | e3 | Not Qualified | 1 | 150 °C | 260 | 30 | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | MATTE TIN | GULL WING | DUAL | 1926 | SOT-23 | SOT-23, 3 PIN | 3 | compliant | Mainland China | EAR99 | 6.5 | |||||||||||||||||||
MJD122T4G
onsemi
|
查询价格和库存 |
|
Yes | Active | 100 V | 8 A | NPN | YES | DARLINGTON WITH BUILT-IN DIODE AND RESISTOR | 2 | 1 | 100 | 4 MHz | 20 W | SWITCHING | SILICON | R-PSSO-G2 | e3 | Not Qualified | 1 | 150 °C | 260 | 30 | COLLECTOR | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | Matte Tin (Sn) - annealed | GULL WING | SINGLE | MJD122T4G | 2260 | DPAK (SINGLE GAUGE) TO-252 | LEAD FREE, PLASTIC, CASE 369C-01, DPAK-3 | 3 | 369C | not_compliant | Mainland China | EAR99 | 4 | 8541.29.00.95 | ||||||||||||||||||
MMBT2222ATT1G
onsemi
|
查询价格和库存 |
|
Yes | Active | 40 V | 600 mA | NPN | YES | SINGLE | 3 | 1 | 40 | 300 MHz | 150 mW | AMPLIFIER | SILICON | 285 ns | 35 ns | R-PDSO-G3 | e3 | Not Qualified | 1 | 150 °C | 260 | 30 | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | Matte Tin (Sn) - annealed | GULL WING | DUAL | MMBT2222ATT1G | 2260 | SC-75 (SOT-416) 3 LEAD | SC-75, 3 PIN | 3 | 463-01 | compliant | Mainland China | EAR99 | 7 | ||||||||||||||||||
SMMBTA06LT1G
onsemi
|
查询价格和库存 |
|
Yes | Active | 80 V | 500 mA | NPN | YES | SINGLE | 3 | 1 | 100 | 100 MHz | 300 mW | AMPLIFIER | SILICON | TO-236 | R-PDSO-G3 | e3 | AEC-Q101 | 1 | 150 °C | 260 | 30 | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | Matte Tin (Sn) - annealed | GULL WING | DUAL | SMMBTA06LT1G | 2260 | SOT-23 (TO-236) 3 LEAD | HALOGEN FREE AND ROHS COMPLIANT, CASE 318-08, 3 PIN | 3 | 318-08 | compliant | Mainland China | EAR99 | 7 |