service@bom2buy.com (0512) 62988549

无法从文档中提取型号,请重试

Update your browser

Your browser (Internet Explorer) is out of date.

Update your browser for more security, comfort and the best experience for this site.

由于分销商数据更新频繁,当前型号可能有部分数据和上一个页面不一致,请以最新刷新的数据为准。
首页 > 电子元器件选型 > 晶体管 > 功率场效应晶体管 > IRFBE20 详情
更多产品参数
IRFBE20

IRFBE20
已加入BOM:

IRFBE20
已加入 Default List -

Power Field-Effect Transistor, 1.8A I(D), 800V, 6.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN
制造商:
ISC 无锡固电
制造商型号:
IRFBE20
符合标准:
Rohs 不符合    含铅
文档下载
IRFBE20数据表
参考设计(2)
85VAC-265VAC Input, 24V@0.1A Non-Isolated Flyback
PMP4043: This reference design uses the UCC28600 quasi-resonant flyback controller to generate a 24V/0.1A output from a universal AC input source. This flyback converter is not isolated. Three transistors are used in place of an opto-coupler to reduce the overall BOM cost.
288-450Vdc Input, 7V/12V/15V Output at 16W, QR Flyback
PMP4794: The PMP4794 reference design uses the UCC28600 green mode flyback controller to generate three outputs (7V, 12V, and 15V). The 7V and 12V outputs are isolated, while the 15V is non-isolated. The 12V output is regulated. This supply is 84% effficient at maximum load, and consumes less than 100mW at no load.
固电半导体
分销商编号:
ISC-IRFBE20
单价:
暂无价格信息
请输入数量:
-+
库存/包装:
0
起订量:
1
递增量:
1,000
搜索更多的分销商结果
搜索
请输入完整或部分产品型号,最少 3 个字母或数字
新建BOM