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首页 > 电子元器件选型 > 二极管 > 整流二极管 > MBR0520LT3G 详情
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MBR0520LT3G

MBR0520LT3G
已加入BOM:

MBR0520LT3G
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Rectifier Diode, Schottky, 1 Phase, 1 Element, 0.5A, 20V V(RRM), Silicon
制造商:
ON Semiconductor
制造商型号:
MBR0520LT3G
符合标准:
Rohs 符合    不含铅
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MBR0520LT3G数据表
参考设计(1)
Isolated IGBT Gate Driver Evaluation Platform for 3-Phase Inverter System Reference Design
TIDA-00195: The TIDA-00195 reference design consists of a 22kW power stage with TI’s new reinforced isolated IGBT gate driver ISO5852S intended for motor control in various applications. This design allows performance evaluation of the ISO5852S in 3-phase inverter incorporating 1200V rated IGBT modules of current ratings ranging from 50A-200A. Some of the important functionality and performance evaluated are short circuit protection using DESAT detection, Soft-shutdown, effectiveness of the Active Miller Clamp at different inverter dv/dt, and ESD/EFT performance of IGBT gate driver at system level derived from adjustable speed electrical power drive systems (IEC61800-3). Piccolo launch pad LAUNCHXL-F28027 is used to generate the PWM signals required for controlling the inverter.
Master Electronics
分销商编号:
未知
交货地:
中国大陆
港台地区
单价:
  • 阶梯 人民币价格(含税) 美元价格
  • 10000+ ¥0.3296 $0.0417
  • 30000+ ¥0.3240 $0.0410
  • 50000+ ¥0.3224 $0.0408
  • 100000+ ¥0.3209 $0.0406
  • 150000+ ¥0.3193 $0.0404
  • 250000+ ¥0.3177 $0.0402
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请输入数量:
-+
总计:
库存/包装:
30,000
起订量:
10,000
递增量:
10,000
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