更多产品参数
Rectifier Diode, Schottky, 1 Phase, 1 Element, 0.5A, 20V V(RRM), Silicon
制造商:
ON Semiconductor
制造商型号:
MBR0520LT3G
符合标准:
Rohs 符合
不含铅
数据手册:
文档下载
MBR0520LT3G数据表
参考设计(1)
Isolated IGBT Gate Driver Evaluation Platform for 3-Phase Inverter System Reference Design
TIDA-00195: The TIDA-00195 reference design consists of a 22kW power stage with TI’s new reinforced isolated IGBT gate driver ISO5852S intended for motor control in various applications. This design allows performance evaluation of the ISO5852S in 3-phase inverter incorporating 1200V rated IGBT modules of current ratings ranging from 50A-200A. Some of the important functionality and performance evaluated are short circuit protection using DESAT detection, Soft-shutdown, effectiveness of the Active Miller Clamp at different inverter dv/dt, and ESD/EFT performance of IGBT gate driver at system level derived from adjustable speed electrical power drive systems (IEC61800-3). Piccolo launch pad LAUNCHXL-F28027 is used to generate the PWM signals required for controlling the inverter.
