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首页 > 电子元器件选型 > 二极管 > 齐纳二极管 > MM3Z12VB 详情
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MM3Z12VB

MM3Z12VB
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MM3Z12VB
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200mW 2% Zener, SOD323F 12 V, SOD-323FL, 3000-REEL
制造商:
ON Semiconductor
制造商型号:
MM3Z12VB
符合标准:
Rohs 符合    不含铅
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MM3Z12VB数据表
参考设计(1)
Isolated IGBT Gate Driver Evaluation Platform for 3-Phase Inverter System Reference Design
TIDA-00195: The TIDA-00195 reference design consists of a 22kW power stage with TI’s new reinforced isolated IGBT gate driver ISO5852S intended for motor control in various applications. This design allows performance evaluation of the ISO5852S in 3-phase inverter incorporating 1200V rated IGBT modules of current ratings ranging from 50A-200A. Some of the important functionality and performance evaluated are short circuit protection using DESAT detection, Soft-shutdown, effectiveness of the Active Miller Clamp at different inverter dv/dt, and ESD/EFT performance of IGBT gate driver at system level derived from adjustable speed electrical power drive systems (IEC61800-3). Piccolo launch pad LAUNCHXL-F28027 is used to generate the PWM signals required for controlling the inverter.
Avnet Asia
分销商编号:
MM3Z12VB
单价:
暂无价格信息
请输入数量:
-+
库存/包装:
0
起订量:
27,000
递增量:
3,000
备货时间:
11 Weeks, 0 Days
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