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P-Channel Enhancement Mode MOSFET with -55V drain-source voltage, -15A continuous drain current, and 60mΩ typical RDS(ON) at VGS=-10V, designed using trench technology for low gate charge and high efficiency in power switching applications.
制造商:
Wuxi NCE Power Co Ltd
制造商型号:
NCE55P15K
符合标准:
未知
数据手册:
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NCE55P15K数据表
