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Transistors > Power Field-Effect Transistors

IPD60R380C6

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IPD60R380C6
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ISC 无锡固电

Power Field-Effect Transistor, 10.6A I(D), 600V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252

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Lifecycle Status: Not Recommended
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IPD60R380C6 Infineon Technologies AG Also applies to IPD60R380 ,IPD60R380C6
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