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Power Field-Effect Transistor, 27A I(D), 100V, 0.07ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, CASE 221A-09, 3 PIN

Technical Details

Price & Stock

Parametrics

Rohs Code

不符合

Part Life Cycle Code

Transferred

Package Description

CASE 221A-09, 3 PIN

Reach Compliance Code

Unknown

ECCN Code

EAR99

HTS Code

8541.29.00.95

Popularity

12564

Risk Rank

8.3

Additional Feature

Avalanche Energy Rating (Eas)

365 mJ

Case Connection

DRAIN

Configuration

DS Breakdown Voltage-Min

100 V

Drain Current-Max (ID)

27 A

Drain-source On Resistance-Max

0.07 Ω

FET Technology

Feedback Cap-Max (Crss)

300 pF

JEDEC-95 Code

TO-220AB

JESD-30 Code

R-PSFM-T3

JESD-609 Code

Number of Elements

Number of Terminals

Operating Mode

ENHANCEMENT MODE

Operating Temperature-Max

150 °C

Package Body Material

PLASTIC/EPOXY

Package Shape

RECTANGULAR

Package Style

FLANGE MOUNT

Polarity/Channel Type

N-CHANNEL

Power Dissipation Ambient-Max

125 W

Power Dissipation-Max (Abs)

150 W

Pulsed Drain Current-Max (IDM)

95 A

Qualification Status

Not Qualified

Surface Mount

Terminal Finish

Tin/Lead (Sn/Pb)

Terminal Form

THROUGH-HOLE

Terminal Position

SINGLE

Transistor Application

SWITCHING

Transistor Element Material

SILICON

Turn-off Time-Max (toff)

110 ns

Turn-on Time-Max (ton)

90 ns

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Documents

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