| 型号 | Most Relevant | Technical | Compliance | Operating Conditions | Physical | Dimensions | Other | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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| 数据手册 |
单价/库存
|
风险等级 | 是否无铅 |
是否Rohs认证
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生命周期 | 内存密度 | 内存宽度 |
部门规模
|
组织 |
标称供电电压 (Vsup)
|
最长访问时间 | 最大时钟频率 (fCLK) | 内存集成电路类型 | 其他特性 | 备用内存宽度 | 启动块 | 命令用户界面 | 通用闪存接口 | 数据轮询 | 数据保留时间-最小值 | 耐久性 | 功能数量 | 端口数量 | 部门数/规模 | 字数代码 | 字数 | 工作模式 | 输出特性 | 页面大小 | 并行/串行 |
编程电压
|
就绪/忙碌
|
串行总线类型
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最大待机电流
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最大压摆率
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最大供电电压 (Vsup)
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最小供电电压 (Vsup)
|
技术 |
温度等级
|
切换位
|
类型
|
JESD-30 代码 |
认证状态
|
JESD-609代码 | 湿度敏感等级 | 最高工作温度 | 最低工作温度 | 峰值回流温度(摄氏度) |
筛选级别
|
处于峰值回流温度下的最长时间
|
端子数量 | 封装主体材料 | 封装代码 | 封装等效代码 | 封装形状 | 封装形式 |
表面贴装
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端子面层
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端子形式
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端子节距
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端子位置
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座面最大高度
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长度 |
宽度
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Source Content uid
|
mfrid
|
包装说明
|
针数
|
制造商包装代码
|
是否符合REACH标准
|
COO
|
ECCN代码
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HTS代码
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YTEOL
|
零件包装代码
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SST39VF1601-70-4I-EKE-T
Microchip Technology Inc
|
查询价格和库存 |
|
Yes | Active | 16.7772 Mbit | 16 | 2K | 1MX16 | 3 V | 70 ns | FLASH | BOTTOM | YES | YES | YES | 100 | 100000 Write/Erase Cycles | 1 | 1 | 512 | 1000000 | 1.0486 M | ASYNCHRONOUS | 3-STATE | PARALLEL | 3 V | 20 µA | 35 µA | 3.6 V | 2.7 V | CMOS | INDUSTRIAL | YES | NOR TYPE | R-PDSO-G48 | Not Qualified | e3 | 85 °C | -40 °C | 48 | PLASTIC/EPOXY | TSSOP | TSSOP48,.8,20 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE, SHRINK PITCH | YES | Matte Tin (Sn) | GULL WING | 500 µm | DUAL | 1.2 mm | 18.4 mm | 12 mm | SST39VF1601-70-4I-EKE-T | 2188 | TSSOP, TSSOP48,.8,20 | 48 | TSOP-48 | Compliant | South Korea | 3A991.B.1.A | 8542.32.00.51 | 3 | ||||||||||||||
|
SST39VF1601C-70-4I-EKE
Microchip Technology Inc
|
查询价格和库存 |
|
Yes | Yes | Active | 16.7772 Mbit | 16 | 8K,4K,16K,32K | 1MX16 | 3 V | 70 ns | FLASH | BOTTOM BOOT BLOCK | BOTTOM | YES | YES | YES | 100 | 100000 Write/Erase Cycles | 1 | 1 | 1,2,1,31 | 1000000 | 1.0486 M | ASYNCHRONOUS | 3-STATE | PARALLEL | 3 V | YES | 20 µA | 35 µA | 3.6 V | 2.7 V | CMOS | INDUSTRIAL | YES | NOR TYPE | R-PDSO-G48 | Not Qualified | e3 | 3 | 85 °C | -40 °C | 260 | TS 16949 | 40 | 48 | PLASTIC/EPOXY | TSSOP | TSSOP48,.8,20 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE, SHRINK PITCH | YES | Matte Tin (Sn) | GULL WING | 500 µm | DUAL | 1.2 mm | 18.4 mm | 12 mm | SST39VF1601C-70-4I-EKE | 2188 | TSSOP, TSSOP48,.8,20 | 48 | TSOP-48 | Compliant | South Korea, Taiwan | EAR99 | 8542.32.00.51 | 8 | TSOP1 | ||||||
|
S25FL128SAGMFI003
Infineon Technologies AG
|
查询价格和库存 |
|
Yes | Active | FLASH | Not Qualified | 2065 | , | Compliant | Mainland China, Taiwan, Thailand | EAR99 | 8542.32.00.51 | 10 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
|
S25FL128SAGMFI000
Infineon Technologies AG
|
查询价格和库存 |
|
Yes | Active | FLASH | Not Qualified | 2065 | , | Compliant | Mainland China, Taiwan, Thailand | EAR99 | 8542.32.00.51 | 10 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
|
S25FL128SAGMFMG00
Infineon Technologies AG
|
查询价格和库存 |
|
Yes | Active | FLASH | 2065 | , | Compliant | EAR99 | 8542.32.00.51 | 10 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
|
S29GL01GS11FHIV10
Infineon Technologies AG
|
查询价格和库存 |
|
Yes | Active | 1.0737 Gbit | 16 | 64K | 64MX16 | 3 V | 110 ns | FLASH | YES | YES | YES | 20 | 100000 Write/Erase Cycles | 1 | 1024 | 64000000 | 67.1089 M | ASYNCHRONOUS | 3-STATE | 16 words | PARALLEL | 3 V | YES | 100 µA | 100 µA | 3.6 V | 2.7 V | CMOS | YES | NOR TYPE | R-PBGA-B64 | e1 | 3 | 85 °C | -40 °C | 260 | 30 | 64 | PLASTIC/EPOXY | LBGA | BGA64,8X8,40 | RECTANGULAR | GRID ARRAY, LOW PROFILE | YES | Tin/Silver/Copper (Sn/Ag/Cu) | BALL | 1 mm | BOTTOM | 1.4 mm | 13 mm | 11 mm | 2065 | LBGA, BGA64,8X8,40 | Compliant | EAR99 | 8542.32.00.51 | 10 | |||||||||||||||||
|
S29GL512S11DHIV23
Infineon Technologies AG
|
查询价格和库存 |
|
Yes | Active | 536.8709 Mbit | 16 | 64K | 32MX16 | 3 V | 110 ns | FLASH | YES | YES | YES | 20 | 100000 Write/Erase Cycles | 1 | 512 | 32000000 | 33.5544 M | ASYNCHRONOUS | 3-STATE | 16 words | PARALLEL | 3 V | YES | 100 µA | 100 µA | 3.6 V | 2.7 V | CMOS | YES | NOR TYPE | S-PBGA-B64 | e1 | 3 | 85 °C | -40 °C | 260 | 30 | 64 | PLASTIC/EPOXY | LBGA | BGA64,8X8,40 | SQUARE | GRID ARRAY, LOW PROFILE | YES | Tin/Silver/Copper (Sn/Ag/Cu) | BALL | 1 mm | BOTTOM | 1.4 mm | 9 mm | 9 mm | 2065 | LBGA, BGA64,8X8,40 | Compliant | EAR99 | 8542.32.00.51 | 10 | |||||||||||||||||
|
S25FL512SAGMFI011
Infineon Technologies AG
|
查询价格和库存 |
|
Yes | Active | FLASH | Not Qualified | 2065 | , | Compliant | Mainland China, Taiwan | EAR99 | 8542.32.00.51 | 10 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
|
S29GL01GS11DHIV13
Infineon Technologies AG
|
查询价格和库存 |
|
Yes | Active | 1.0737 Gbit | 16 | 64K | 64MX16 | 3 V | 110 ns | FLASH | YES | YES | YES | 20 | 100000 Write/Erase Cycles | 1 | 1024 | 64000000 | 67.1089 M | ASYNCHRONOUS | 3-STATE | 16 words | PARALLEL | 3 V | YES | 100 µA | 100 µA | 3.6 V | 2.7 V | CMOS | YES | NOR TYPE | S-PBGA-B64 | e1 | 3 | 85 °C | -40 °C | 260 | 30 | 64 | PLASTIC/EPOXY | LBGA | BGA64,8X8,40 | SQUARE | GRID ARRAY, LOW PROFILE | YES | Tin/Silver/Copper (Sn/Ag/Cu) | BALL | 1 mm | BOTTOM | 1.4 mm | 9 mm | 9 mm | 2065 | LBGA, BGA64,8X8,40 | Compliant | EAR99 | 8542.32.00.51 | 10 | |||||||||||||||||
|
S25FL128SAGNFM000
Infineon Technologies AG
|
查询价格和库存 |
|
Yes | Active | FLASH | 2065 | , | Compliant | EAR99 | 8542.32.00.51 | 10 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
|
S25FL064LABMFI013
Infineon Technologies AG
|
查询价格和库存 |
|
Yes | Active | 67.1089 Mbit | 8 | 8MX8 | 3 V | 108 MHz | FLASH | 2 | 100000 Write/Erase Cycles | 1 | 8000000 | 8.3886 M | SYNCHRONOUS | 3-STATE | SERIAL | 3 V | SPI | 20 µA | 30 µA | 3.6 V | 2.7 V | CMOS | INDUSTRIAL | NOR TYPE | R-PDSO-G8 | e3 | 3 | 85 °C | -40 °C | 260 | 8 | PLASTIC/EPOXY | SOP | SOP8,.3 | SQUARE | SMALL OUTLINE | YES | Matte Tin (Sn) | GULL WING | 1.27 mm | DUAL | 2.16 mm | 5.28 mm | 5.28 mm | 2065 | SOP, SOP8,.3 | Compliant | Mainland China, Taiwan | EAR99 | 8542.32.00.51 | 7 | |||||||||||||||||||||||
|
S25FL128SAGNFI001
Infineon Technologies AG
|
查询价格和库存 |
|
Yes | Active | FLASH | Not Qualified | 2065 | , | Compliant | Taiwan, Thailand | EAR99 | 8542.32.00.51 | 10 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
|
S25FL128SAGNFI003
Infineon Technologies AG
|
查询价格和库存 |
|
Yes | Active | FLASH | Not Qualified | 2065 | , | Compliant | EAR99 | 8542.32.00.51 | 10 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
|
S25FL064LABMFM013
Infineon Technologies AG
|
查询价格和库存 |
|
Yes | Active | 67.1089 Mbit | 8 | 8MX8 | 3 V | 108 MHz | FLASH | IT ALSO HAVE X1 MEMORY WIDTH | 2 | 1 | 8000000 | 8.3886 M | SYNCHRONOUS | 3-STATE | SERIAL | 3 V | 3.6 V | 2.7 V | CMOS | AUTOMOTIVE | S-PDSO-G8 | e3 | 3 | 125 °C | -40 °C | AEC-Q100 | 8 | PLASTIC/EPOXY | SOP | SQUARE | SMALL OUTLINE | YES | Matte Tin (Sn) | GULL WING | 1.27 mm | DUAL | 2.16 mm | 5.28 mm | 5.28 mm | 2065 | SOP, | Compliant | EAR99 | 8542.32.00.51 | 7 | |||||||||||||||||||||||||||||
|
S25FL064LABMFV013
Infineon Technologies AG
|
查询价格和库存 |
|
Yes | Active | 67.1089 Mbit | 8 | 8MX8 | 3 V | 108 MHz | FLASH | IT ALSO HAVE X1 MEMORY WIDTH | 2 | 1 | 8000000 | 8.3886 M | SYNCHRONOUS | 3-STATE | SERIAL | 3 V | 3.6 V | 2.7 V | CMOS | INDUSTRIAL | S-PDSO-G8 | e3 | 3 | 105 °C | -40 °C | 8 | PLASTIC/EPOXY | SOP | SQUARE | SMALL OUTLINE | YES | Matte Tin (Sn) | GULL WING | 1.27 mm | DUAL | 2.16 mm | 5.28 mm | 5.28 mm | 2065 | SOP, | Compliant | EAR99 | 8542.32.00.51 | 7 | ||||||||||||||||||||||||||||||
|
S25FL064LABMFI010
Infineon Technologies AG
|
查询价格和库存 |
|
Yes | Active | 67.1089 Mbit | 8 | 8MX8 | 3 V | 108 MHz | FLASH | IT ALSO HAVE X1 MEMORY WIDTH | 2 | 1 | 8000000 | 8.3886 M | SYNCHRONOUS | 3-STATE | SERIAL | 3 V | 3.6 V | 2.7 V | CMOS | INDUSTRIAL | S-PDSO-G8 | e3 | 3 | 85 °C | -40 °C | 260 | 8 | PLASTIC/EPOXY | SOP | SQUARE | SMALL OUTLINE | YES | Matte Tin (Sn) | GULL WING | 1.27 mm | DUAL | 2.16 mm | 5.28 mm | 5.28 mm | 2065 | SOP, | Compliant | Mainland China, Taiwan | EAR99 | 8542.32.00.51 | 7 | ||||||||||||||||||||||||||||
|
S25FL128SAGBHVB00
Infineon Technologies AG
|
查询价格和库存 |
|
Yes | Active | FLASH | Not Qualified | 2065 | , | Compliant | EAR99 | 8542.32.00.51 | 10 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
|
S25FL064LABMFM010
Infineon Technologies AG
|
查询价格和库存 |
|
Yes | Active | 67.1089 Mbit | 8 | 8MX8 | 3 V | 108 MHz | FLASH | IT ALSO HAVE X1 MEMORY WIDTH | 2 | 1 | 8000000 | 8.3886 M | SYNCHRONOUS | 3-STATE | SERIAL | 3 V | 3.6 V | 2.7 V | CMOS | AUTOMOTIVE | S-PDSO-G8 | e3 | 3 | 125 °C | -40 °C | AEC-Q100 | 8 | PLASTIC/EPOXY | SOP | SQUARE | SMALL OUTLINE | YES | Matte Tin (Sn) | GULL WING | 1.27 mm | DUAL | 2.16 mm | 5.28 mm | 5.28 mm | 2065 | SOP, | Compliant | EAR99 | 8542.32.00.51 | 7 | |||||||||||||||||||||||||||||
|
S25FL128SAGNFV001
Infineon Technologies AG
|
查询价格和库存 |
|
Yes | Active | FLASH | Not Qualified | 2065 | , | Compliant | EAR99 | 8542.32.00.51 | 10 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
|
S29GL128S10DHIV10
Infineon Technologies AG
|
查询价格和库存 |
|
Yes | Active | 134.2177 Mbit | 16 | 64K | 8MX16 | 3 V | 100 ns | FLASH | YES | YES | YES | 20 | 100000 Write/Erase Cycles | 1 | 128 | 8000000 | 8.3886 M | ASYNCHRONOUS | 3-STATE | 16 words | PARALLEL | 3 V | YES | 100 µA | 100 µA | 3.6 V | 2.7 V | CMOS | YES | NOR TYPE | S-PBGA-B64 | e1 | 3 | 85 °C | -40 °C | 260 | 30 | 64 | PLASTIC/EPOXY | LBGA | BGA64,8X8,40 | SQUARE | GRID ARRAY, LOW PROFILE | YES | Tin/Silver/Copper (Sn/Ag/Cu) | BALL | 1 mm | BOTTOM | 1.4 mm | 9 mm | 9 mm | 2065 | LBGA, BGA64,8X8,40 | Compliant | EAR99 | 8542.32.00.51 | 10 | |||||||||||||||||