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首页 > 电子元器件选型 > 晶体管 > IGBT

HGT1S10N120BNST

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HGT1S10N120BNST
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Insulated Gate Bipolar Transistor, 35A I(C), 1200V V(BR)CES, N-Channel, TO-263AB, TO-263AB, 3 PIN

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¥20.7101
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-
生命周期状态: Transferred
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HGT1S10N120BNST Fairchild Semiconductor Corporation 也适用于 HGT1S10N120BNST ,HGT1S10N120BNS HGT1S10N120BNST ON Semiconductor 也适用于 HGTP10N120BN ,HGT1S10N120BNST ,HGT1S10N120BNS
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