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SRAM:

540,897 个筛选结果
静态随机存取存储器(Static Random-Access Memory,SRAM)是随机存取存储器的一种。所谓的“静态”,是指这种存储器只要保持通电,里面储存的数据就可以恒常保持。相对之下,动态随机存取存储器(DRAM)里面所储存的数据就需要周期性地更新。然而,当电力供应停止时,SRAM储存的数据还是会消失(被称为volatile memory),这与在断电后还能储存资料的ROM或闪存是不同的。
SRAM (540,897)
闪存 (312,420)
DRAM (266,974)
EEPROM (146,536)
FIFO (71,621)
OTP ROM (39,010)
EPROM (21,844)
MASK ROM (10,109)
PROM (70)
型号
最长访问时间 (50)
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最大时钟频率 (fCLK) (50)
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制造商 (50)
内存密度 (50)
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内存宽度 (36)
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组织 (50)
型号
型号 Most Relevant Technical Compliance Operating Conditions Physical Dimensions Other
数据手册 单价/库存
风险等级 是否无铅 是否Rohs认证
生命周期 内存密度 内存宽度 组织 标称供电电压 (Vsup)
最长访问时间 最大时钟频率 (fCLK) 内存集成电路类型 其他特性 I/O 类型 功能数量 端口数量 字数代码 字数 工作模式 输出特性 并行/串行 反向引出线
最大待机电流
最小待机电流
最大压摆率
最大供电电压 (Vsup)
最小供电电压 (Vsup)
技术 温度等级
JESD-30 代码 认证状态
JESD-609代码 湿度敏感等级 最高工作温度 最低工作温度 峰值回流温度(摄氏度) 处于峰值回流温度下的最长时间
端子数量 封装主体材料 封装代码 封装等效代码 封装形状 封装形式 表面贴装
端子面层
端子形式
端子节距
端子位置
座面最大高度
长度 宽度
mfrid
零件包装代码
包装说明
针数
是否符合REACH标准
Country Of Origin
ECCN代码
HTS代码
YTEOL
Source Content uid
制造商包装代码
IS61WV51216BLL-10MLI
Integrated Silicon Solution Inc
查询价格和库存
Yes Yes Active 8.3886 Mbit 16 512KX16 3 V 10 ns STANDARD SRAM COMMON 1 512000 524.288 k ASYNCHRONOUS 3-STATE PARALLEL 20 mA 1.2 V 95 µA 3.6 V 2.4 V CMOS INDUSTRIAL R-PBGA-B48 Not Qualified e1 3 85 °C -40 °C 260 30 48 PLASTIC/EPOXY TFBGA BGA48,6X8,30 RECTANGULAR GRID ARRAY, THIN PROFILE, FINE PITCH YES TIN SILVER COPPER BALL 750 µm BOTTOM 1.2 mm 11 mm 9 mm 2070 BGA 9 X 11 MM, LEAD FREE, MINI, BGA-48 48 compliant Mainland China, Taiwan 3A991.B.2.A 8542.32.00.41 5.15
AS7C4098A-15TIN
Alliance Memory Inc
查询价格和库存
Yes Yes Active 4.1943 Mbit 16 256KX16 5 V 15 ns STANDARD SRAM COMMON 1 256000 262.144 k ASYNCHRONOUS 3-STATE PARALLEL 10 mA 4.5 V 140 µA 5.5 V 4.5 V CMOS INDUSTRIAL R-PDSO-G44 Not Qualified e3/e6 3 85 °C -40 °C 44 PLASTIC/EPOXY TSOP2 TSOP44,.46,32 RECTANGULAR SMALL OUTLINE, THIN PROFILE YES GULL WING 800 µm DUAL 1.2 mm 18.415 mm 10.16 mm 1689 TSOP2 44 compliant Mainland China 3A991.B.2.A 8542.32.00.41 4
AS7C4098A-15TCN
Alliance Memory Inc
查询价格和库存
Yes Yes Active 4.1943 Mbit 16 256KX16 5 V 15 ns STANDARD SRAM COMMON 1 256000 262.144 k ASYNCHRONOUS 3-STATE PARALLEL 10 mA 4.5 V 140 µA 5.5 V 4.5 V CMOS COMMERCIAL R-PDSO-G44 Not Qualified e3/e6 3 70 °C 44 PLASTIC/EPOXY TSOP2 TSOP44,.46,32 RECTANGULAR SMALL OUTLINE, THIN PROFILE YES GULL WING 800 µm DUAL 1.2 mm 18.415 mm 10.16 mm 1689 TSOP2 44 compliant Mainland China 3A991.B.2.A 8542.32.00.41 4
70V28L20PFGI
Renesas Electronics Corporation
查询价格和库存
Yes Yes Active 1.0486 Mbit 16 64KX16 3.3 V 20 ns DUAL-PORT SRAM COMMON 1 2 64000 65.536 k ASYNCHRONOUS 3-STATE PARALLEL 3 mA 3 V 220 µA 3.6 V 3 V CMOS INDUSTRIAL S-PQFP-G100 Not Qualified e3 3 85 °C -40 °C 260 30 100 PLASTIC/EPOXY LFQFP QFP100,.63SQ,20 SQUARE FLATPACK, LOW PROFILE, FINE PITCH YES MATTE TIN GULL WING 500 µm QUAD 1.6 mm 14 mm 14 mm 2354 TQFP 100 compliant Philippines, Taiwan NLR 8542320041 4.8 70V28L20PFGI PNG100
IS61WV10248BLL-10TLI
Integrated Silicon Solution Inc
查询价格和库存
Yes Yes Active 8.3886 Mbit 8 1MX8 3 V 10 ns STANDARD SRAM COMMON 1 1000000 1.0486 M ASYNCHRONOUS 3-STATE PARALLEL 25 mA 1.2 V 100 µA 3.6 V 2.4 V CMOS INDUSTRIAL R-PDSO-G44 Not Qualified e3 3 85 °C -40 °C 260 10 44 PLASTIC/EPOXY TSOP2 TSOP44,.46,32 RECTANGULAR SMALL OUTLINE, THIN PROFILE YES MATTE TIN GULL WING 800 µm DUAL 1.2 mm 18.415 mm 10.16 mm 2070 TSOP2 TSOP2, TSOP44,.46,32 44 compliant Mainland China, Taiwan 3A991.B.2.A 8542.32.00.41 5.25
GS8322Z18AGB-200V
GSI Technology
查询价格和库存
Yes Active 37.7487 Mbit 18 2MX18 1.8 V 6.5 ns 200 MHz ZBT SRAM ALSO OPERATED WITH 2.5V SUPPLY; PIPELINE/FLOW THROUGH ARCHITECTURE COMMON 1 2000000 2.0972 M SYNCHRONOUS 3-STATE PARALLEL 30 mA 1.7 V 175 µA 2 V 1.7 V CMOS COMMERCIAL R-PBGA-B119 Not Qualified 70 °C NOT SPECIFIED NOT SPECIFIED 119 PLASTIC/EPOXY BGA BGA119,7X17,50 RECTANGULAR GRID ARRAY YES BALL 1.27 mm BOTTOM 1.99 mm 22 mm 14 mm 2017 BGA BGA, BGA119,7X17,50 119 compliant Taiwan 3A991.B.2.B 8542.32.00.41 6.8
GS8322Z36AGD-150IV
GSI Technology
查询价格和库存
Yes Active 37.7487 Mbit 36 1MX36 1.8 V 7.5 ns 150 MHz ZBT SRAM ALSO OPERATED WITH 2.5V SUPPLY; PIPELINE/FLOW THROUGH ARCHITECTURE COMMON 1 1000000 1.0486 M SYNCHRONOUS 3-STATE PARALLEL 40 mA 1.7 V 165 µA 2 V 1.7 V CMOS INDUSTRIAL R-PBGA-B165 Not Qualified 85 °C -40 °C NOT SPECIFIED NOT SPECIFIED 165 PLASTIC/EPOXY LBGA BGA165,11X15,40 RECTANGULAR GRID ARRAY, LOW PROFILE YES BALL 1 mm BOTTOM 1.4 mm 15 mm 13 mm 2017 BGA LBGA, BGA165,11X15,40 165 compliant Taiwan 3A991.B.2.B 8542.32.00.41 7
AS7C1026B-15JIN
Alliance Memory Inc
查询价格和库存
Yes Yes Active 1.0486 Mbit 16 64KX16 5 V 15 ns STANDARD SRAM 1 64000 65.536 k ASYNCHRONOUS PARALLEL 5.5 V 4.5 V CMOS INDUSTRIAL R-PDSO-J44 e3/e6 3 85 °C -40 °C 44 PLASTIC/EPOXY SOJ RECTANGULAR SMALL OUTLINE YES J BEND 1.27 mm DUAL 3.7592 mm 28.575 mm 10.16 mm 1689 SOJ 0.400 INCH, LEAD FREE, PLASTIC, SOJ-44 44 compliant Taiwan 3A991.B.2.B 8542.32.00.41 4
CY62147EV30LL-45ZSXIT
Infineon Technologies AG
查询价格和库存
Yes Active 4.1943 Mbit 16 256KX16 3 V 45 ns STANDARD SRAM COMMON 1 256000 262.144 k ASYNCHRONOUS 3-STATE PARALLEL 7 µA 1.5 V 20 µA 3.6 V 2.2 V CMOS INDUSTRIAL R-PDSO-G44 Not Qualified e4 3 85 °C -40 °C 260 20 44 PLASTIC/EPOXY TSOP2 TSOP44,.46,32 RECTANGULAR SMALL OUTLINE, THIN PROFILE YES Nickel/Palladium/Gold (Ni/Pd/Au) GULL WING 800 µm DUAL 1.194 mm 18.415 mm 10.16 mm 2065 0.729 X 0.435 INCH, ROHS COMPLIANT, TSOP2-44 compliant Mainland China, Philippines, Taiwan 4
GS8322Z36AGB-200I
GSI Technology
查询价格和库存
Yes Yes Active 37.7487 Mbit 36 1MX36 2.5 V 6.5 ns 200 MHz ZBT SRAM ALSO OPERATES AT 3.3V SUPPLY, PIPELINED ARCHITECTURE, FLOW THROUGH COMMON 1 1000000 1.0486 M SYNCHRONOUS 3-STATE PARALLEL 40 mA 2.3 V 235 µA 2.7 V 2.3 V CMOS INDUSTRIAL R-PBGA-B119 Not Qualified e1 3 85 °C -40 °C 119 PLASTIC/EPOXY BGA BGA119,7X17,50 RECTANGULAR GRID ARRAY YES TIN SILVER COPPER BALL 1.27 mm BOTTOM 1.99 mm 22 mm 14 mm 2017 BGA BGA, BGA119,7X17,50 119 compliant Taiwan 3A991.B.2.B 8542.32.00.41 6.2
IS61WV5128BLL-10BLI
Integrated Silicon Solution Inc
查询价格和库存
Yes Yes Active 4.1943 Mbit 8 512KX8 3 V 10 ns STANDARD SRAM COMMON 1 512000 524.288 k ASYNCHRONOUS 3-STATE PARALLEL 8 mA 2 V 45 µA 3.6 V 2.4 V CMOS INDUSTRIAL R-PBGA-B36 Not Qualified e1 3 85 °C -40 °C 260 10 36 PLASTIC/EPOXY TFBGA BGA36,6X8,30 RECTANGULAR GRID ARRAY, THIN PROFILE, FINE PITCH YES TIN SILVER COPPER BALL 750 µm BOTTOM 1.2 mm 8 mm 6 mm 2070 BGA TFBGA, BGA36,6X8,30 36 compliant Mainland China, Taiwan 3A991.B.2.A 8542.32.00.41 4.9
AS7C1026B-15TCN
Alliance Memory Inc
查询价格和库存
Yes Yes Active 1.0486 Mbit 16 64KX16 5 V 15 ns STANDARD SRAM TTL COMPATIBLE INPUTS/OUTPUTS; LOW POWER STANDBY COMMON 1 64000 65.536 k ASYNCHRONOUS 3-STATE PARALLEL 10 mA 4.5 V 90 µA 5.5 V 4.5 V CMOS COMMERCIAL R-PDSO-G44 Not Qualified e3/e6 3 70 °C 44 PLASTIC/EPOXY TSOP2 TSOP44,.46,32 RECTANGULAR SMALL OUTLINE, THIN PROFILE YES GULL WING 800 µm DUAL 1.2 mm 18.415 mm 10.16 mm 1689 TSOP2 10.20 X 18.40 MM, LEAD FREE, TSOP2-44 44 compliant Mainland China 3A991.B.2.B 8542.32.00.41 4
CY62147EV30LL-45ZSXI
Infineon Technologies AG
查询价格和库存
Yes Active 4.1943 Mbit 16 256KX16 3 V 45 ns STANDARD SRAM COMMON 1 256000 262.144 k ASYNCHRONOUS 3-STATE PARALLEL 7 µA 1.5 V 20 µA 3.6 V 2.2 V CMOS INDUSTRIAL R-PDSO-G44 Not Qualified e4 3 85 °C -40 °C 260 20 44 PLASTIC/EPOXY TSOP2 TSOP44,.46,32 RECTANGULAR SMALL OUTLINE, THIN PROFILE YES Nickel/Palladium/Gold (Ni/Pd/Au) GULL WING 800 µm DUAL 1.194 mm 18.415 mm 10.16 mm 2065 TSOP2-44 compliant Philippines 4
IS61WV6416DBLL-10TLI
Integrated Silicon Solution Inc
查询价格和库存
Yes Active 1.0486 Mbit 16 64KX16 3 V 10 ns STANDARD SRAM COMMON 1 64000 65.536 k ASYNCHRONOUS 3-STATE PARALLEL 55 µA 2 V 55 µA 3.6 V 2.4 V CMOS INDUSTRIAL R-PDSO-G44 Not Qualified 85 °C -40 °C 44 PLASTIC/EPOXY TSOP2 TSOP44,.46,32 RECTANGULAR SMALL OUTLINE, THIN PROFILE YES GULL WING 800 µm DUAL 1.2 mm 18.41 mm 10.16 mm 2070 TSOP2 TSOP2, TSOP44,.46,32 44 compliant Mainland China, Taiwan 3A991.B.2.B 8542.32.00.41 4
GS832132AGD-150I
GSI Technology
查询价格和库存
Yes Active 33.5544 Mbit 32 1MX32 2.5 V 7.5 ns 150 MHz CACHE SRAM PIPELINE OR FLOW THROUGH ARCHITECTUREL; ALSO OPERATES AT 3.3 V SUPPLY COMMON 1 1000000 1.0486 M SYNCHRONOUS 3-STATE PARALLEL 40 mA 2.3 V 195 µA 2.7 V 2.3 V CMOS INDUSTRIAL R-PBGA-B165 Not Qualified 85 °C -40 °C NOT SPECIFIED NOT SPECIFIED 165 PLASTIC/EPOXY LBGA BGA165,11X15,40 RECTANGULAR GRID ARRAY, LOW PROFILE YES BALL 1 mm BOTTOM 1.4 mm 15 mm 13 mm 2017 BGA LBGA, BGA165,11X15,40 165 compliant Taiwan 3A991.B.2.B 8542.32.00.41 6.15
GS8321Z36AGD-150I
GSI Technology
查询价格和库存
Yes Yes Active 37.7487 Mbit 36 1MX36 2.5 V ZBT SRAM IT ALSO OPERATES AT 3 V TO 3.6 V SUPPLY VOLTAGE 1 1000000 1.0486 M SYNCHRONOUS PARALLEL 2.7 V 2.3 V CMOS R-PBGA-B165 Not Qualified e1 3 260 165 PLASTIC/EPOXY LBGA RECTANGULAR GRID ARRAY, LOW PROFILE YES TIN SILVER COPPER BALL 1 mm BOTTOM 1.4 mm 15 mm 13 mm 2017 BGA LBGA, 165 compliant Taiwan 3A991.B.2.B 8542.32.00.41 6.4
AS6C4008-55ZIN
Alliance Memory Inc
查询价格和库存
Yes Yes Active 4.1943 Mbit 8 512KX8 3 V 55 ns STANDARD SRAM COMMON 1 512000 524.288 k ASYNCHRONOUS 3-STATE PARALLEL 30 µA 2 V 60 µA 5.5 V 2.7 V CMOS INDUSTRIAL R-PDSO-G32 Not Qualified e3 3 85 °C -40 °C 32 PLASTIC/EPOXY TSOP2 TSOP32,.46 RECTANGULAR SMALL OUTLINE, THIN PROFILE YES TIN GULL WING 1.27 mm DUAL 1.2 mm 20.95 mm 10.16 mm 1689 TSSOP2 TSOP2, TSOP32,.46 32 compliant Taiwan 3A991.B.2.A 8542.32.00.41 4
AS6C4016-55ZIN
Alliance Memory Inc
查询价格和库存
Yes Yes Active 4.1943 Mbit 16 256KX16 3 V 55 ns STANDARD SRAM COMMON 1 256000 262.144 k ASYNCHRONOUS 3-STATE PARALLEL 30 µA 2 V 60 µA 5.5 V 2.7 V CMOS INDUSTRIAL R-PDSO-G44 Not Qualified 3 85 °C -40 °C 44 PLASTIC/EPOXY TSOP2 TSOP44,.46,32 RECTANGULAR SMALL OUTLINE, THIN PROFILE YES GULL WING 800 µm DUAL 1.2 mm 18.415 mm 10.16 mm 1689 TSOP2 TSOP2, TSOP44,.46,32 44 compliant Taiwan 3A991.B.2.A 8542.32.00.41 4
GS8662QT19BGD-333I
GSI Technology
查询价格和库存
Yes Yes Active 75.4975 Mbit 18 4MX18 1.8 V 450 ps QDR SRAM PIPELINED ARCHITECTURE 1 4000000 4.1943 M SYNCHRONOUS PARALLEL 1.9 V 1.7 V CMOS INDUSTRIAL R-PBGA-B165 Not Qualified e1 3 85 °C -40 °C 260 165 PLASTIC/EPOXY LBGA RECTANGULAR GRID ARRAY, LOW PROFILE YES TIN SILVER COPPER BALL 1 mm BOTTOM 1.4 mm 15 mm 13 mm 2017 BGA LBGA, 165 compliant Taiwan 3A991.B.2.B 8542.32.00.41 6.8
AS6C62256-55PCN
Alliance Memory Inc
查询价格和库存
Yes Yes Active 262.144 kbit 8 32KX8 3.3 V 55 ns STANDARD SRAM COMMON 1 32000 32.768 k ASYNCHRONOUS 3-STATE PARALLEL YES 20 µA 2 V 45 µA 5.5 V 2.7 V CMOS COMMERCIAL R-PDIP-T28 Not Qualified e3/e6 70 °C NOT SPECIFIED NOT SPECIFIED 28 PLASTIC/EPOXY DIP DIP28,.6 RECTANGULAR IN-LINE NO MATTE TIN/TIN BISMUTH THROUGH-HOLE 2.54 mm DUAL 3.937 mm 15.24 mm 1689 DIP DIP, DIP28,.6 28 compliant Taiwan EAR99 8542.32.00.41 4
型号 Most Relevant Technical Compliance Operating Conditions Physical Dimensions Other
数据手册 单价/库存
风险等级 是否无铅 是否Rohs认证
生命周期 内存密度 内存宽度 组织 标称供电电压 (Vsup)
最长访问时间 最大时钟频率 (fCLK) 内存集成电路类型 其他特性 I/O 类型 功能数量 端口数量 字数代码 字数 工作模式 输出特性 并行/串行 反向引出线
最大待机电流
最小待机电流
最大压摆率
最大供电电压 (Vsup)
最小供电电压 (Vsup)
技术 温度等级
JESD-30 代码 认证状态
JESD-609代码 湿度敏感等级 最高工作温度 最低工作温度 峰值回流温度(摄氏度) 处于峰值回流温度下的最长时间
端子数量 封装主体材料 封装代码 封装等效代码 封装形状 封装形式 表面贴装
端子面层
端子形式
端子节距
端子位置
座面最大高度
长度 宽度
mfrid
零件包装代码
包装说明
针数
是否符合REACH标准
Country Of Origin
ECCN代码
HTS代码
YTEOL
Source Content uid
制造商包装代码
IS61WV51216BLL-10MLI
Integrated Silicon Solution Inc
查询价格和库存
Yes Yes Active 8.3886 Mbit 16 512KX16 3 V 10 ns STANDARD SRAM COMMON 1 512000 524.288 k ASYNCHRONOUS 3-STATE PARALLEL 20 mA 1.2 V 95 µA 3.6 V 2.4 V CMOS INDUSTRIAL R-PBGA-B48 Not Qualified e1 3 85 °C -40 °C 260 30 48 PLASTIC/EPOXY TFBGA BGA48,6X8,30 RECTANGULAR GRID ARRAY, THIN PROFILE, FINE PITCH YES TIN SILVER COPPER BALL 750 µm BOTTOM 1.2 mm 11 mm 9 mm 2070 BGA 9 X 11 MM, LEAD FREE, MINI, BGA-48 48 compliant Mainland China, Taiwan 3A991.B.2.A 8542.32.00.41 5.15
AS7C4098A-15TIN
Alliance Memory Inc
查询价格和库存
Yes Yes Active 4.1943 Mbit 16 256KX16 5 V 15 ns STANDARD SRAM COMMON 1 256000 262.144 k ASYNCHRONOUS 3-STATE PARALLEL 10 mA 4.5 V 140 µA 5.5 V 4.5 V CMOS INDUSTRIAL R-PDSO-G44 Not Qualified e3/e6 3 85 °C -40 °C 44 PLASTIC/EPOXY TSOP2 TSOP44,.46,32 RECTANGULAR SMALL OUTLINE, THIN PROFILE YES GULL WING 800 µm DUAL 1.2 mm 18.415 mm 10.16 mm 1689 TSOP2 44 compliant Mainland China 3A991.B.2.A 8542.32.00.41 4
AS7C4098A-15TCN
Alliance Memory Inc
查询价格和库存
Yes Yes Active 4.1943 Mbit 16 256KX16 5 V 15 ns STANDARD SRAM COMMON 1 256000 262.144 k ASYNCHRONOUS 3-STATE PARALLEL 10 mA 4.5 V 140 µA 5.5 V 4.5 V CMOS COMMERCIAL R-PDSO-G44 Not Qualified e3/e6 3 70 °C 44 PLASTIC/EPOXY TSOP2 TSOP44,.46,32 RECTANGULAR SMALL OUTLINE, THIN PROFILE YES GULL WING 800 µm DUAL 1.2 mm 18.415 mm 10.16 mm 1689 TSOP2 44 compliant Mainland China 3A991.B.2.A 8542.32.00.41 4
70V28L20PFGI
Renesas Electronics Corporation
查询价格和库存
Yes Yes Active 1.0486 Mbit 16 64KX16 3.3 V 20 ns DUAL-PORT SRAM COMMON 1 2 64000 65.536 k ASYNCHRONOUS 3-STATE PARALLEL 3 mA 3 V 220 µA 3.6 V 3 V CMOS INDUSTRIAL S-PQFP-G100 Not Qualified e3 3 85 °C -40 °C 260 30 100 PLASTIC/EPOXY LFQFP QFP100,.63SQ,20 SQUARE FLATPACK, LOW PROFILE, FINE PITCH YES MATTE TIN GULL WING 500 µm QUAD 1.6 mm 14 mm 14 mm 2354 TQFP 100 compliant Philippines, Taiwan NLR 8542320041 4.8 70V28L20PFGI PNG100
IS61WV10248BLL-10TLI
Integrated Silicon Solution Inc
查询价格和库存
Yes Yes Active 8.3886 Mbit 8 1MX8 3 V 10 ns STANDARD SRAM COMMON 1 1000000 1.0486 M ASYNCHRONOUS 3-STATE PARALLEL 25 mA 1.2 V 100 µA 3.6 V 2.4 V CMOS INDUSTRIAL R-PDSO-G44 Not Qualified e3 3 85 °C -40 °C 260 10 44 PLASTIC/EPOXY TSOP2 TSOP44,.46,32 RECTANGULAR SMALL OUTLINE, THIN PROFILE YES MATTE TIN GULL WING 800 µm DUAL 1.2 mm 18.415 mm 10.16 mm 2070 TSOP2 TSOP2, TSOP44,.46,32 44 compliant Mainland China, Taiwan 3A991.B.2.A 8542.32.00.41 5.25
GS8322Z18AGB-200V
GSI Technology
查询价格和库存
Yes Active 37.7487 Mbit 18 2MX18 1.8 V 6.5 ns 200 MHz ZBT SRAM ALSO OPERATED WITH 2.5V SUPPLY; PIPELINE/FLOW THROUGH ARCHITECTURE COMMON 1 2000000 2.0972 M SYNCHRONOUS 3-STATE PARALLEL 30 mA 1.7 V 175 µA 2 V 1.7 V CMOS COMMERCIAL R-PBGA-B119 Not Qualified 70 °C NOT SPECIFIED NOT SPECIFIED 119 PLASTIC/EPOXY BGA BGA119,7X17,50 RECTANGULAR GRID ARRAY YES BALL 1.27 mm BOTTOM 1.99 mm 22 mm 14 mm 2017 BGA BGA, BGA119,7X17,50 119 compliant Taiwan 3A991.B.2.B 8542.32.00.41 6.8
GS8322Z36AGD-150IV
GSI Technology
查询价格和库存
Yes Active 37.7487 Mbit 36 1MX36 1.8 V 7.5 ns 150 MHz ZBT SRAM ALSO OPERATED WITH 2.5V SUPPLY; PIPELINE/FLOW THROUGH ARCHITECTURE COMMON 1 1000000 1.0486 M SYNCHRONOUS 3-STATE PARALLEL 40 mA 1.7 V 165 µA 2 V 1.7 V CMOS INDUSTRIAL R-PBGA-B165 Not Qualified 85 °C -40 °C NOT SPECIFIED NOT SPECIFIED 165 PLASTIC/EPOXY LBGA BGA165,11X15,40 RECTANGULAR GRID ARRAY, LOW PROFILE YES BALL 1 mm BOTTOM 1.4 mm 15 mm 13 mm 2017 BGA LBGA, BGA165,11X15,40 165 compliant Taiwan 3A991.B.2.B 8542.32.00.41 7
AS7C1026B-15JIN
Alliance Memory Inc
查询价格和库存
Yes Yes Active 1.0486 Mbit 16 64KX16 5 V 15 ns STANDARD SRAM 1 64000 65.536 k ASYNCHRONOUS PARALLEL 5.5 V 4.5 V CMOS INDUSTRIAL R-PDSO-J44 e3/e6 3 85 °C -40 °C 44 PLASTIC/EPOXY SOJ RECTANGULAR SMALL OUTLINE YES J BEND 1.27 mm DUAL 3.7592 mm 28.575 mm 10.16 mm 1689 SOJ 0.400 INCH, LEAD FREE, PLASTIC, SOJ-44 44 compliant Taiwan 3A991.B.2.B 8542.32.00.41 4
CY62147EV30LL-45ZSXIT
Infineon Technologies AG
查询价格和库存
Yes Active 4.1943 Mbit 16 256KX16 3 V 45 ns STANDARD SRAM COMMON 1 256000 262.144 k ASYNCHRONOUS 3-STATE PARALLEL 7 µA 1.5 V 20 µA 3.6 V 2.2 V CMOS INDUSTRIAL R-PDSO-G44 Not Qualified e4 3 85 °C -40 °C 260 20 44 PLASTIC/EPOXY TSOP2 TSOP44,.46,32 RECTANGULAR SMALL OUTLINE, THIN PROFILE YES Nickel/Palladium/Gold (Ni/Pd/Au) GULL WING 800 µm DUAL 1.194 mm 18.415 mm 10.16 mm 2065 0.729 X 0.435 INCH, ROHS COMPLIANT, TSOP2-44 compliant Mainland China, Philippines, Taiwan 4
GS8322Z36AGB-200I
GSI Technology
查询价格和库存
Yes Yes Active 37.7487 Mbit 36 1MX36 2.5 V 6.5 ns 200 MHz ZBT SRAM ALSO OPERATES AT 3.3V SUPPLY, PIPELINED ARCHITECTURE, FLOW THROUGH COMMON 1 1000000 1.0486 M SYNCHRONOUS 3-STATE PARALLEL 40 mA 2.3 V 235 µA 2.7 V 2.3 V CMOS INDUSTRIAL R-PBGA-B119 Not Qualified e1 3 85 °C -40 °C 119 PLASTIC/EPOXY BGA BGA119,7X17,50 RECTANGULAR GRID ARRAY YES TIN SILVER COPPER BALL 1.27 mm BOTTOM 1.99 mm 22 mm 14 mm 2017 BGA BGA, BGA119,7X17,50 119 compliant Taiwan 3A991.B.2.B 8542.32.00.41 6.2
IS61WV5128BLL-10BLI
Integrated Silicon Solution Inc
查询价格和库存
Yes Yes Active 4.1943 Mbit 8 512KX8 3 V 10 ns STANDARD SRAM COMMON 1 512000 524.288 k ASYNCHRONOUS 3-STATE PARALLEL 8 mA 2 V 45 µA 3.6 V 2.4 V CMOS INDUSTRIAL R-PBGA-B36 Not Qualified e1 3 85 °C -40 °C 260 10 36 PLASTIC/EPOXY TFBGA BGA36,6X8,30 RECTANGULAR GRID ARRAY, THIN PROFILE, FINE PITCH YES TIN SILVER COPPER BALL 750 µm BOTTOM 1.2 mm 8 mm 6 mm 2070 BGA TFBGA, BGA36,6X8,30 36 compliant Mainland China, Taiwan 3A991.B.2.A 8542.32.00.41 4.9
AS7C1026B-15TCN
Alliance Memory Inc
查询价格和库存
Yes Yes Active 1.0486 Mbit 16 64KX16 5 V 15 ns STANDARD SRAM TTL COMPATIBLE INPUTS/OUTPUTS; LOW POWER STANDBY COMMON 1 64000 65.536 k ASYNCHRONOUS 3-STATE PARALLEL 10 mA 4.5 V 90 µA 5.5 V 4.5 V CMOS COMMERCIAL R-PDSO-G44 Not Qualified e3/e6 3 70 °C 44 PLASTIC/EPOXY TSOP2 TSOP44,.46,32 RECTANGULAR SMALL OUTLINE, THIN PROFILE YES GULL WING 800 µm DUAL 1.2 mm 18.415 mm 10.16 mm 1689 TSOP2 10.20 X 18.40 MM, LEAD FREE, TSOP2-44 44 compliant Mainland China 3A991.B.2.B 8542.32.00.41 4
CY62147EV30LL-45ZSXI
Infineon Technologies AG
查询价格和库存
Yes Active 4.1943 Mbit 16 256KX16 3 V 45 ns STANDARD SRAM COMMON 1 256000 262.144 k ASYNCHRONOUS 3-STATE PARALLEL 7 µA 1.5 V 20 µA 3.6 V 2.2 V CMOS INDUSTRIAL R-PDSO-G44 Not Qualified e4 3 85 °C -40 °C 260 20 44 PLASTIC/EPOXY TSOP2 TSOP44,.46,32 RECTANGULAR SMALL OUTLINE, THIN PROFILE YES Nickel/Palladium/Gold (Ni/Pd/Au) GULL WING 800 µm DUAL 1.194 mm 18.415 mm 10.16 mm 2065 TSOP2-44 compliant Philippines 4
IS61WV6416DBLL-10TLI
Integrated Silicon Solution Inc
查询价格和库存
Yes Active 1.0486 Mbit 16 64KX16 3 V 10 ns STANDARD SRAM COMMON 1 64000 65.536 k ASYNCHRONOUS 3-STATE PARALLEL 55 µA 2 V 55 µA 3.6 V 2.4 V CMOS INDUSTRIAL R-PDSO-G44 Not Qualified 85 °C -40 °C 44 PLASTIC/EPOXY TSOP2 TSOP44,.46,32 RECTANGULAR SMALL OUTLINE, THIN PROFILE YES GULL WING 800 µm DUAL 1.2 mm 18.41 mm 10.16 mm 2070 TSOP2 TSOP2, TSOP44,.46,32 44 compliant Mainland China, Taiwan 3A991.B.2.B 8542.32.00.41 4
GS832132AGD-150I
GSI Technology
查询价格和库存
Yes Active 33.5544 Mbit 32 1MX32 2.5 V 7.5 ns 150 MHz CACHE SRAM PIPELINE OR FLOW THROUGH ARCHITECTUREL; ALSO OPERATES AT 3.3 V SUPPLY COMMON 1 1000000 1.0486 M SYNCHRONOUS 3-STATE PARALLEL 40 mA 2.3 V 195 µA 2.7 V 2.3 V CMOS INDUSTRIAL R-PBGA-B165 Not Qualified 85 °C -40 °C NOT SPECIFIED NOT SPECIFIED 165 PLASTIC/EPOXY LBGA BGA165,11X15,40 RECTANGULAR GRID ARRAY, LOW PROFILE YES BALL 1 mm BOTTOM 1.4 mm 15 mm 13 mm 2017 BGA LBGA, BGA165,11X15,40 165 compliant Taiwan 3A991.B.2.B 8542.32.00.41 6.15
GS8321Z36AGD-150I
GSI Technology
查询价格和库存
Yes Yes Active 37.7487 Mbit 36 1MX36 2.5 V ZBT SRAM IT ALSO OPERATES AT 3 V TO 3.6 V SUPPLY VOLTAGE 1 1000000 1.0486 M SYNCHRONOUS PARALLEL 2.7 V 2.3 V CMOS R-PBGA-B165 Not Qualified e1 3 260 165 PLASTIC/EPOXY LBGA RECTANGULAR GRID ARRAY, LOW PROFILE YES TIN SILVER COPPER BALL 1 mm BOTTOM 1.4 mm 15 mm 13 mm 2017 BGA LBGA, 165 compliant Taiwan 3A991.B.2.B 8542.32.00.41 6.4
AS6C4008-55ZIN
Alliance Memory Inc
查询价格和库存
Yes Yes Active 4.1943 Mbit 8 512KX8 3 V 55 ns STANDARD SRAM COMMON 1 512000 524.288 k ASYNCHRONOUS 3-STATE PARALLEL 30 µA 2 V 60 µA 5.5 V 2.7 V CMOS INDUSTRIAL R-PDSO-G32 Not Qualified e3 3 85 °C -40 °C 32 PLASTIC/EPOXY TSOP2 TSOP32,.46 RECTANGULAR SMALL OUTLINE, THIN PROFILE YES TIN GULL WING 1.27 mm DUAL 1.2 mm 20.95 mm 10.16 mm 1689 TSSOP2 TSOP2, TSOP32,.46 32 compliant Taiwan 3A991.B.2.A 8542.32.00.41 4
AS6C4016-55ZIN
Alliance Memory Inc
查询价格和库存
Yes Yes Active 4.1943 Mbit 16 256KX16 3 V 55 ns STANDARD SRAM COMMON 1 256000 262.144 k ASYNCHRONOUS 3-STATE PARALLEL 30 µA 2 V 60 µA 5.5 V 2.7 V CMOS INDUSTRIAL R-PDSO-G44 Not Qualified 3 85 °C -40 °C 44 PLASTIC/EPOXY TSOP2 TSOP44,.46,32 RECTANGULAR SMALL OUTLINE, THIN PROFILE YES GULL WING 800 µm DUAL 1.2 mm 18.415 mm 10.16 mm 1689 TSOP2 TSOP2, TSOP44,.46,32 44 compliant Taiwan 3A991.B.2.A 8542.32.00.41 4
GS8662QT19BGD-333I
GSI Technology
查询价格和库存
Yes Yes Active 75.4975 Mbit 18 4MX18 1.8 V 450 ps QDR SRAM PIPELINED ARCHITECTURE 1 4000000 4.1943 M SYNCHRONOUS PARALLEL 1.9 V 1.7 V CMOS INDUSTRIAL R-PBGA-B165 Not Qualified e1 3 85 °C -40 °C 260 165 PLASTIC/EPOXY LBGA RECTANGULAR GRID ARRAY, LOW PROFILE YES TIN SILVER COPPER BALL 1 mm BOTTOM 1.4 mm 15 mm 13 mm 2017 BGA LBGA, 165 compliant Taiwan 3A991.B.2.B 8542.32.00.41 6.8
AS6C62256-55PCN
Alliance Memory Inc
查询价格和库存
Yes Yes Active 262.144 kbit 8 32KX8 3.3 V 55 ns STANDARD SRAM COMMON 1 32000 32.768 k ASYNCHRONOUS 3-STATE PARALLEL YES 20 µA 2 V 45 µA 5.5 V 2.7 V CMOS COMMERCIAL R-PDIP-T28 Not Qualified e3/e6 70 °C NOT SPECIFIED NOT SPECIFIED 28 PLASTIC/EPOXY DIP DIP28,.6 RECTANGULAR IN-LINE NO MATTE TIN/TIN BISMUTH THROUGH-HOLE 2.54 mm DUAL 3.937 mm 15.24 mm 1689 DIP DIP, DIP28,.6 28 compliant Taiwan EAR99 8542.32.00.41 4
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