型号 | Most Relevant | Technical | Compliance | Operating Conditions | Physical | Dimensions | Other | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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数据手册 |
单价/库存
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风险等级 | 是否无铅 |
是否Rohs认证
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生命周期 | 内存密度 | 内存宽度 | 组织 |
标称供电电压 (Vsup)
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最长访问时间 | 最大时钟频率 (fCLK) | 内存集成电路类型 | 其他特性 | I/O 类型 | 功能数量 | 端口数量 | 字数代码 | 字数 | 工作模式 | 输出特性 | 并行/串行 |
反向引出线
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最大待机电流
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最小待机电流
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最大压摆率
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最大供电电压 (Vsup)
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最小供电电压 (Vsup)
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技术 |
温度等级
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JESD-30 代码 |
认证状态
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JESD-609代码 | 湿度敏感等级 | 最高工作温度 | 最低工作温度 | 峰值回流温度(摄氏度) |
处于峰值回流温度下的最长时间
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端子数量 | 封装主体材料 | 封装代码 | 封装等效代码 | 封装形状 | 封装形式 |
表面贴装
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端子面层
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端子形式
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端子节距
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端子位置
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座面最大高度
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长度 |
宽度
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mfrid
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零件包装代码
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包装说明
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针数
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是否符合REACH标准
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Country Of Origin
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ECCN代码
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HTS代码
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YTEOL
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Source Content uid
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制造商包装代码
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IS61WV51216BLL-10MLI
Integrated Silicon Solution Inc
|
查询价格和库存 |
|
Yes | Yes | Active | 8.3886 Mbit | 16 | 512KX16 | 3 V | 10 ns | STANDARD SRAM | COMMON | 1 | 512000 | 524.288 k | ASYNCHRONOUS | 3-STATE | PARALLEL | 20 mA | 1.2 V | 95 µA | 3.6 V | 2.4 V | CMOS | INDUSTRIAL | R-PBGA-B48 | Not Qualified | e1 | 3 | 85 °C | -40 °C | 260 | 30 | 48 | PLASTIC/EPOXY | TFBGA | BGA48,6X8,30 | RECTANGULAR | GRID ARRAY, THIN PROFILE, FINE PITCH | YES | TIN SILVER COPPER | BALL | 750 µm | BOTTOM | 1.2 mm | 11 mm | 9 mm | 2070 | BGA | 9 X 11 MM, LEAD FREE, MINI, BGA-48 | 48 | compliant | Mainland China, Taiwan | 3A991.B.2.A | 8542.32.00.41 | 5.15 | ||||||||
AS7C4098A-15TIN
Alliance Memory Inc
|
查询价格和库存 |
|
Yes | Yes | Active | 4.1943 Mbit | 16 | 256KX16 | 5 V | 15 ns | STANDARD SRAM | COMMON | 1 | 256000 | 262.144 k | ASYNCHRONOUS | 3-STATE | PARALLEL | 10 mA | 4.5 V | 140 µA | 5.5 V | 4.5 V | CMOS | INDUSTRIAL | R-PDSO-G44 | Not Qualified | e3/e6 | 3 | 85 °C | -40 °C | 44 | PLASTIC/EPOXY | TSOP2 | TSOP44,.46,32 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE | YES | GULL WING | 800 µm | DUAL | 1.2 mm | 18.415 mm | 10.16 mm | 1689 | TSOP2 | 44 | compliant | Mainland China | 3A991.B.2.A | 8542.32.00.41 | 4 | ||||||||||||
AS7C4098A-15TCN
Alliance Memory Inc
|
查询价格和库存 |
|
Yes | Yes | Active | 4.1943 Mbit | 16 | 256KX16 | 5 V | 15 ns | STANDARD SRAM | COMMON | 1 | 256000 | 262.144 k | ASYNCHRONOUS | 3-STATE | PARALLEL | 10 mA | 4.5 V | 140 µA | 5.5 V | 4.5 V | CMOS | COMMERCIAL | R-PDSO-G44 | Not Qualified | e3/e6 | 3 | 70 °C | 44 | PLASTIC/EPOXY | TSOP2 | TSOP44,.46,32 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE | YES | GULL WING | 800 µm | DUAL | 1.2 mm | 18.415 mm | 10.16 mm | 1689 | TSOP2 | 44 | compliant | Mainland China | 3A991.B.2.A | 8542.32.00.41 | 4 | |||||||||||||
70V28L20PFGI
Renesas Electronics Corporation
|
查询价格和库存 |
|
Yes | Yes | Active | 1.0486 Mbit | 16 | 64KX16 | 3.3 V | 20 ns | DUAL-PORT SRAM | COMMON | 1 | 2 | 64000 | 65.536 k | ASYNCHRONOUS | 3-STATE | PARALLEL | 3 mA | 3 V | 220 µA | 3.6 V | 3 V | CMOS | INDUSTRIAL | S-PQFP-G100 | Not Qualified | e3 | 3 | 85 °C | -40 °C | 260 | 30 | 100 | PLASTIC/EPOXY | LFQFP | QFP100,.63SQ,20 | SQUARE | FLATPACK, LOW PROFILE, FINE PITCH | YES | MATTE TIN | GULL WING | 500 µm | QUAD | 1.6 mm | 14 mm | 14 mm | 2354 | TQFP | 100 | compliant | Philippines, Taiwan | NLR | 8542320041 | 4.8 | 70V28L20PFGI | PNG100 | ||||||
IS61WV10248BLL-10TLI
Integrated Silicon Solution Inc
|
查询价格和库存 |
|
Yes | Yes | Active | 8.3886 Mbit | 8 | 1MX8 | 3 V | 10 ns | STANDARD SRAM | COMMON | 1 | 1000000 | 1.0486 M | ASYNCHRONOUS | 3-STATE | PARALLEL | 25 mA | 1.2 V | 100 µA | 3.6 V | 2.4 V | CMOS | INDUSTRIAL | R-PDSO-G44 | Not Qualified | e3 | 3 | 85 °C | -40 °C | 260 | 10 | 44 | PLASTIC/EPOXY | TSOP2 | TSOP44,.46,32 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE | YES | MATTE TIN | GULL WING | 800 µm | DUAL | 1.2 mm | 18.415 mm | 10.16 mm | 2070 | TSOP2 | TSOP2, TSOP44,.46,32 | 44 | compliant | Mainland China, Taiwan | 3A991.B.2.A | 8542.32.00.41 | 5.25 | ||||||||
GS8322Z18AGB-200V
GSI Technology
|
查询价格和库存 |
|
Yes | Active | 37.7487 Mbit | 18 | 2MX18 | 1.8 V | 6.5 ns | 200 MHz | ZBT SRAM | ALSO OPERATED WITH 2.5V SUPPLY; PIPELINE/FLOW THROUGH ARCHITECTURE | COMMON | 1 | 2000000 | 2.0972 M | SYNCHRONOUS | 3-STATE | PARALLEL | 30 mA | 1.7 V | 175 µA | 2 V | 1.7 V | CMOS | COMMERCIAL | R-PBGA-B119 | Not Qualified | 70 °C | NOT SPECIFIED | NOT SPECIFIED | 119 | PLASTIC/EPOXY | BGA | BGA119,7X17,50 | RECTANGULAR | GRID ARRAY | YES | BALL | 1.27 mm | BOTTOM | 1.99 mm | 22 mm | 14 mm | 2017 | BGA | BGA, BGA119,7X17,50 | 119 | compliant | Taiwan | 3A991.B.2.B | 8542.32.00.41 | 6.8 | |||||||||||
GS8322Z36AGD-150IV
GSI Technology
|
查询价格和库存 |
|
Yes | Active | 37.7487 Mbit | 36 | 1MX36 | 1.8 V | 7.5 ns | 150 MHz | ZBT SRAM | ALSO OPERATED WITH 2.5V SUPPLY; PIPELINE/FLOW THROUGH ARCHITECTURE | COMMON | 1 | 1000000 | 1.0486 M | SYNCHRONOUS | 3-STATE | PARALLEL | 40 mA | 1.7 V | 165 µA | 2 V | 1.7 V | CMOS | INDUSTRIAL | R-PBGA-B165 | Not Qualified | 85 °C | -40 °C | NOT SPECIFIED | NOT SPECIFIED | 165 | PLASTIC/EPOXY | LBGA | BGA165,11X15,40 | RECTANGULAR | GRID ARRAY, LOW PROFILE | YES | BALL | 1 mm | BOTTOM | 1.4 mm | 15 mm | 13 mm | 2017 | BGA | LBGA, BGA165,11X15,40 | 165 | compliant | Taiwan | 3A991.B.2.B | 8542.32.00.41 | 7 | ||||||||||
AS7C1026B-15JIN
Alliance Memory Inc
|
查询价格和库存 |
|
Yes | Yes | Active | 1.0486 Mbit | 16 | 64KX16 | 5 V | 15 ns | STANDARD SRAM | 1 | 64000 | 65.536 k | ASYNCHRONOUS | PARALLEL | 5.5 V | 4.5 V | CMOS | INDUSTRIAL | R-PDSO-J44 | e3/e6 | 3 | 85 °C | -40 °C | 44 | PLASTIC/EPOXY | SOJ | RECTANGULAR | SMALL OUTLINE | YES | J BEND | 1.27 mm | DUAL | 3.7592 mm | 28.575 mm | 10.16 mm | 1689 | SOJ | 0.400 INCH, LEAD FREE, PLASTIC, SOJ-44 | 44 | compliant | Taiwan | 3A991.B.2.B | 8542.32.00.41 | 4 | ||||||||||||||||||
CY62147EV30LL-45ZSXIT
Infineon Technologies AG
|
查询价格和库存 |
|
Yes | Active | 4.1943 Mbit | 16 | 256KX16 | 3 V | 45 ns | STANDARD SRAM | COMMON | 1 | 256000 | 262.144 k | ASYNCHRONOUS | 3-STATE | PARALLEL | 7 µA | 1.5 V | 20 µA | 3.6 V | 2.2 V | CMOS | INDUSTRIAL | R-PDSO-G44 | Not Qualified | e4 | 3 | 85 °C | -40 °C | 260 | 20 | 44 | PLASTIC/EPOXY | TSOP2 | TSOP44,.46,32 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE | YES | Nickel/Palladium/Gold (Ni/Pd/Au) | GULL WING | 800 µm | DUAL | 1.194 mm | 18.415 mm | 10.16 mm | 2065 | 0.729 X 0.435 INCH, ROHS COMPLIANT, TSOP2-44 | compliant | Mainland China, Philippines, Taiwan | 4 | |||||||||||||
GS8322Z36AGB-200I
GSI Technology
|
查询价格和库存 |
|
Yes | Yes | Active | 37.7487 Mbit | 36 | 1MX36 | 2.5 V | 6.5 ns | 200 MHz | ZBT SRAM | ALSO OPERATES AT 3.3V SUPPLY, PIPELINED ARCHITECTURE, FLOW THROUGH | COMMON | 1 | 1000000 | 1.0486 M | SYNCHRONOUS | 3-STATE | PARALLEL | 40 mA | 2.3 V | 235 µA | 2.7 V | 2.3 V | CMOS | INDUSTRIAL | R-PBGA-B119 | Not Qualified | e1 | 3 | 85 °C | -40 °C | 119 | PLASTIC/EPOXY | BGA | BGA119,7X17,50 | RECTANGULAR | GRID ARRAY | YES | TIN SILVER COPPER | BALL | 1.27 mm | BOTTOM | 1.99 mm | 22 mm | 14 mm | 2017 | BGA | BGA, BGA119,7X17,50 | 119 | compliant | Taiwan | 3A991.B.2.B | 8542.32.00.41 | 6.2 | ||||||||
IS61WV5128BLL-10BLI
Integrated Silicon Solution Inc
|
查询价格和库存 |
|
Yes | Yes | Active | 4.1943 Mbit | 8 | 512KX8 | 3 V | 10 ns | STANDARD SRAM | COMMON | 1 | 512000 | 524.288 k | ASYNCHRONOUS | 3-STATE | PARALLEL | 8 mA | 2 V | 45 µA | 3.6 V | 2.4 V | CMOS | INDUSTRIAL | R-PBGA-B36 | Not Qualified | e1 | 3 | 85 °C | -40 °C | 260 | 10 | 36 | PLASTIC/EPOXY | TFBGA | BGA36,6X8,30 | RECTANGULAR | GRID ARRAY, THIN PROFILE, FINE PITCH | YES | TIN SILVER COPPER | BALL | 750 µm | BOTTOM | 1.2 mm | 8 mm | 6 mm | 2070 | BGA | TFBGA, BGA36,6X8,30 | 36 | compliant | Mainland China, Taiwan | 3A991.B.2.A | 8542.32.00.41 | 4.9 | ||||||||
AS7C1026B-15TCN
Alliance Memory Inc
|
查询价格和库存 |
|
Yes | Yes | Active | 1.0486 Mbit | 16 | 64KX16 | 5 V | 15 ns | STANDARD SRAM | TTL COMPATIBLE INPUTS/OUTPUTS; LOW POWER STANDBY | COMMON | 1 | 64000 | 65.536 k | ASYNCHRONOUS | 3-STATE | PARALLEL | 10 mA | 4.5 V | 90 µA | 5.5 V | 4.5 V | CMOS | COMMERCIAL | R-PDSO-G44 | Not Qualified | e3/e6 | 3 | 70 °C | 44 | PLASTIC/EPOXY | TSOP2 | TSOP44,.46,32 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE | YES | GULL WING | 800 µm | DUAL | 1.2 mm | 18.415 mm | 10.16 mm | 1689 | TSOP2 | 10.20 X 18.40 MM, LEAD FREE, TSOP2-44 | 44 | compliant | Mainland China | 3A991.B.2.B | 8542.32.00.41 | 4 | |||||||||||
CY62147EV30LL-45ZSXI
Infineon Technologies AG
|
查询价格和库存 |
|
Yes | Active | 4.1943 Mbit | 16 | 256KX16 | 3 V | 45 ns | STANDARD SRAM | COMMON | 1 | 256000 | 262.144 k | ASYNCHRONOUS | 3-STATE | PARALLEL | 7 µA | 1.5 V | 20 µA | 3.6 V | 2.2 V | CMOS | INDUSTRIAL | R-PDSO-G44 | Not Qualified | e4 | 3 | 85 °C | -40 °C | 260 | 20 | 44 | PLASTIC/EPOXY | TSOP2 | TSOP44,.46,32 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE | YES | Nickel/Palladium/Gold (Ni/Pd/Au) | GULL WING | 800 µm | DUAL | 1.194 mm | 18.415 mm | 10.16 mm | 2065 | TSOP2-44 | compliant | Philippines | 4 | |||||||||||||
IS61WV6416DBLL-10TLI
Integrated Silicon Solution Inc
|
查询价格和库存 |
|
Yes | Active | 1.0486 Mbit | 16 | 64KX16 | 3 V | 10 ns | STANDARD SRAM | COMMON | 1 | 64000 | 65.536 k | ASYNCHRONOUS | 3-STATE | PARALLEL | 55 µA | 2 V | 55 µA | 3.6 V | 2.4 V | CMOS | INDUSTRIAL | R-PDSO-G44 | Not Qualified | 85 °C | -40 °C | 44 | PLASTIC/EPOXY | TSOP2 | TSOP44,.46,32 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE | YES | GULL WING | 800 µm | DUAL | 1.2 mm | 18.41 mm | 10.16 mm | 2070 | TSOP2 | TSOP2, TSOP44,.46,32 | 44 | compliant | Mainland China, Taiwan | 3A991.B.2.B | 8542.32.00.41 | 4 | ||||||||||||||
GS832132AGD-150I
GSI Technology
|
查询价格和库存 |
|
Yes | Active | 33.5544 Mbit | 32 | 1MX32 | 2.5 V | 7.5 ns | 150 MHz | CACHE SRAM | PIPELINE OR FLOW THROUGH ARCHITECTUREL; ALSO OPERATES AT 3.3 V SUPPLY | COMMON | 1 | 1000000 | 1.0486 M | SYNCHRONOUS | 3-STATE | PARALLEL | 40 mA | 2.3 V | 195 µA | 2.7 V | 2.3 V | CMOS | INDUSTRIAL | R-PBGA-B165 | Not Qualified | 85 °C | -40 °C | NOT SPECIFIED | NOT SPECIFIED | 165 | PLASTIC/EPOXY | LBGA | BGA165,11X15,40 | RECTANGULAR | GRID ARRAY, LOW PROFILE | YES | BALL | 1 mm | BOTTOM | 1.4 mm | 15 mm | 13 mm | 2017 | BGA | LBGA, BGA165,11X15,40 | 165 | compliant | Taiwan | 3A991.B.2.B | 8542.32.00.41 | 6.15 | ||||||||||
GS8321Z36AGD-150I
GSI Technology
|
查询价格和库存 |
|
Yes | Yes | Active | 37.7487 Mbit | 36 | 1MX36 | 2.5 V | ZBT SRAM | IT ALSO OPERATES AT 3 V TO 3.6 V SUPPLY VOLTAGE | 1 | 1000000 | 1.0486 M | SYNCHRONOUS | PARALLEL | 2.7 V | 2.3 V | CMOS | R-PBGA-B165 | Not Qualified | e1 | 3 | 260 | 165 | PLASTIC/EPOXY | LBGA | RECTANGULAR | GRID ARRAY, LOW PROFILE | YES | TIN SILVER COPPER | BALL | 1 mm | BOTTOM | 1.4 mm | 15 mm | 13 mm | 2017 | BGA | LBGA, | 165 | compliant | Taiwan | 3A991.B.2.B | 8542.32.00.41 | 6.4 | ||||||||||||||||||
AS6C4008-55ZIN
Alliance Memory Inc
|
查询价格和库存 |
|
Yes | Yes | Active | 4.1943 Mbit | 8 | 512KX8 | 3 V | 55 ns | STANDARD SRAM | COMMON | 1 | 512000 | 524.288 k | ASYNCHRONOUS | 3-STATE | PARALLEL | 30 µA | 2 V | 60 µA | 5.5 V | 2.7 V | CMOS | INDUSTRIAL | R-PDSO-G32 | Not Qualified | e3 | 3 | 85 °C | -40 °C | 32 | PLASTIC/EPOXY | TSOP2 | TSOP32,.46 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE | YES | TIN | GULL WING | 1.27 mm | DUAL | 1.2 mm | 20.95 mm | 10.16 mm | 1689 | TSSOP2 | TSOP2, TSOP32,.46 | 32 | compliant | Taiwan | 3A991.B.2.A | 8542.32.00.41 | 4 | ||||||||||
AS6C4016-55ZIN
Alliance Memory Inc
|
查询价格和库存 |
|
Yes | Yes | Active | 4.1943 Mbit | 16 | 256KX16 | 3 V | 55 ns | STANDARD SRAM | COMMON | 1 | 256000 | 262.144 k | ASYNCHRONOUS | 3-STATE | PARALLEL | 30 µA | 2 V | 60 µA | 5.5 V | 2.7 V | CMOS | INDUSTRIAL | R-PDSO-G44 | Not Qualified | 3 | 85 °C | -40 °C | 44 | PLASTIC/EPOXY | TSOP2 | TSOP44,.46,32 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE | YES | GULL WING | 800 µm | DUAL | 1.2 mm | 18.415 mm | 10.16 mm | 1689 | TSOP2 | TSOP2, TSOP44,.46,32 | 44 | compliant | Taiwan | 3A991.B.2.A | 8542.32.00.41 | 4 | ||||||||||||
GS8662QT19BGD-333I
GSI Technology
|
查询价格和库存 |
|
Yes | Yes | Active | 75.4975 Mbit | 18 | 4MX18 | 1.8 V | 450 ps | QDR SRAM | PIPELINED ARCHITECTURE | 1 | 4000000 | 4.1943 M | SYNCHRONOUS | PARALLEL | 1.9 V | 1.7 V | CMOS | INDUSTRIAL | R-PBGA-B165 | Not Qualified | e1 | 3 | 85 °C | -40 °C | 260 | 165 | PLASTIC/EPOXY | LBGA | RECTANGULAR | GRID ARRAY, LOW PROFILE | YES | TIN SILVER COPPER | BALL | 1 mm | BOTTOM | 1.4 mm | 15 mm | 13 mm | 2017 | BGA | LBGA, | 165 | compliant | Taiwan | 3A991.B.2.B | 8542.32.00.41 | 6.8 | ||||||||||||||
AS6C62256-55PCN
Alliance Memory Inc
|
查询价格和库存 |
|
Yes | Yes | Active | 262.144 kbit | 8 | 32KX8 | 3.3 V | 55 ns | STANDARD SRAM | COMMON | 1 | 32000 | 32.768 k | ASYNCHRONOUS | 3-STATE | PARALLEL | YES | 20 µA | 2 V | 45 µA | 5.5 V | 2.7 V | CMOS | COMMERCIAL | R-PDIP-T28 | Not Qualified | e3/e6 | 70 °C | NOT SPECIFIED | NOT SPECIFIED | 28 | PLASTIC/EPOXY | DIP | DIP28,.6 | RECTANGULAR | IN-LINE | NO | MATTE TIN/TIN BISMUTH | THROUGH-HOLE | 2.54 mm | DUAL | 3.937 mm | 15.24 mm | 1689 | DIP | DIP, DIP28,.6 | 28 | compliant | Taiwan | EAR99 | 8542.32.00.41 | 4 |