型号 | Most Relevant | Technical | Compliance | Operating Conditions | Physical | Dimensions | Other | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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数据手册 |
单价/库存
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风险等级 | 是否无铅 |
是否Rohs认证
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生命周期 | 内存密度 | 内存宽度 | 组织 |
标称供电电压 (Vsup)
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最长访问时间 | 最大时钟频率 (fCLK) | 内存集成电路类型 | 其他特性 | I/O 类型 | 功能数量 | 端口数量 | 字数代码 | 字数 | 工作模式 | 输出特性 | 可输出 | 并行/串行 |
最大待机电流
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最小待机电流
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最大压摆率
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最大供电电压 (Vsup)
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最小供电电压 (Vsup)
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技术 |
温度等级
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JESD-30 代码 |
认证状态
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JESD-609代码 | 湿度敏感等级 | 最高工作温度 | 最低工作温度 | 峰值回流温度(摄氏度) |
处于峰值回流温度下的最长时间
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端子数量 | 封装主体材料 | 封装代码 | 封装等效代码 | 封装形状 | 封装形式 |
表面贴装
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端子面层
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端子形式
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端子节距
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端子位置
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座面最大高度
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长度 |
宽度
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mfrid
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包装说明
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是否符合REACH标准
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ECCN代码
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HTS代码
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零件包装代码
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针数
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Country Of Origin
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YTEOL
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Source Content uid
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制造商包装代码
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Date Of Intro
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GS84018CGB-150I
GSI Technology
|
查询价格和库存 |
|
Yes | Active | 4.7186 Mbit | 18 | 256KX18 | 2.5 V | CACHE SRAM | IT ALSO OPERATES AT 3 V TO 3.6 V SUPPLY VOLTAGE | 1 | 256000 | 262.144 k | SYNCHRONOUS | PARALLEL | 2.7 V | 2.3 V | CMOS | INDUSTRIAL | R-PBGA-B119 | 85 °C | -40 °C | NOT SPECIFIED | NOT SPECIFIED | 119 | PLASTIC/EPOXY | BGA | RECTANGULAR | GRID ARRAY | YES | BALL | 1.27 mm | BOTTOM | 1.99 mm | 22 mm | 14 mm | 2017 | BGA, | compliant | 3A991.B.2.B | 8542.32.00.41 | ||||||||||||||||||||||||
AS7C4096A-12JIN
Alliance Memory Inc
|
查询价格和库存 |
|
Yes | Yes | Active | 4.1943 Mbit | 8 | 512KX8 | 5 V | 12 ns | STANDARD SRAM | COMMON | 1 | 512000 | 524.288 k | ASYNCHRONOUS | 3-STATE | PARALLEL | 10 mA | 4.5 V | 140 µA | 5.5 V | 4.5 V | CMOS | INDUSTRIAL | R-PDSO-J36 | Not Qualified | e3 | 3 | 85 °C | -40 °C | 245 | 40 | 36 | PLASTIC/EPOXY | SOJ | SOJ36,.44 | RECTANGULAR | SMALL OUTLINE | YES | TIN | J BEND | 1.27 mm | DUAL | 3.7592 mm | 23.495 mm | 10.16 mm | 1689 | compliant | 3A991.B.2.A | 8542.32.00.41 | SOJ | 36 | Taiwan | 4 | ||||||||||
AS7C1026B-20TCN
Alliance Memory Inc
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查询价格和库存 |
|
Yes | Yes | Active | 1.0486 Mbit | 16 | 64KX16 | 5 V | 20 ns | STANDARD SRAM | TTL COMPATIBLE INPUTS/OUTPUTS; LOW POWER STANDBY | COMMON | 1 | 64000 | 65.536 k | ASYNCHRONOUS | 3-STATE | PARALLEL | 10 mA | 4.5 V | 80 µA | 5.5 V | 4.5 V | CMOS | COMMERCIAL | R-PDSO-G44 | Not Qualified | e3/e6 | 3 | 70 °C | 44 | PLASTIC/EPOXY | TSOP2 | TSOP44,.46,32 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE | YES | GULL WING | 800 µm | DUAL | 1.2 mm | 18.415 mm | 10.16 mm | 1689 | TSOP2, TSOP44,.46,32 | compliant | 3A991.B.2.B | 8542.32.00.41 | TSOP2 | 44 | Mainland China | 4 | ||||||||||||
CY62146EV30LL-45ZSXIT
Infineon Technologies AG
|
查询价格和库存 |
|
Yes | Active | 4.1943 Mbit | 16 | 256KX16 | 3 V | 45 ns | STANDARD SRAM | COMMON | 1 | 256000 | 262.144 k | ASYNCHRONOUS | 3-STATE | PARALLEL | 7 µA | 1.5 V | 20 µA | 3.6 V | 2.2 V | CMOS | INDUSTRIAL | R-PDSO-G44 | Not Qualified | e4 | 3 | 85 °C | -40 °C | 260 | 20 | 44 | PLASTIC/EPOXY | TSOP2 | TSOP44,.46,32 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE | YES | Nickel/Palladium/Gold (Ni/Pd/Au) | GULL WING | 800 µm | DUAL | 1.194 mm | 18.415 mm | 10.16 mm | 2065 | LEAD FREE, TSOP2-44 | compliant | Mainland China, Philippines, Taiwan | 4 | ||||||||||||||
IS61LPS51236B-200B3LI
Integrated Silicon Solution Inc
|
查询价格和库存 |
|
Yes | Active | 18.8744 Mbit | 36 | 512KX36 | 3.3 V | 3 ns | CACHE SRAM | 1 | 512000 | 524.288 k | SYNCHRONOUS | PARALLEL | 3.465 V | 3.135 V | CMOS | INDUSTRIAL | R-PBGA-B165 | 85 °C | -40 °C | NOT SPECIFIED | NOT SPECIFIED | 165 | PLASTIC/EPOXY | TBGA | RECTANGULAR | GRID ARRAY, THIN PROFILE | YES | BALL | 1 mm | BOTTOM | 1.2 mm | 15 mm | 13 mm | 2070 | TBGA, | compliant | 3A991.B.2.A | 8542.32.00.41 | Mainland China, Taiwan | 5.87 | ||||||||||||||||||||||
GS864272GC-250I
GSI Technology
|
查询价格和库存 |
|
Yes | Yes | Active | 75.4975 Mbit | 72 | 1MX72 | 2.5 V | 6.5 ns | CACHE SRAM | FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES AT 3.3V SUPPLY | 1 | 1000000 | 1.0486 M | SYNCHRONOUS | PARALLEL | 2.7 V | 2.3 V | CMOS | INDUSTRIAL | R-PBGA-B209 | Not Qualified | e1 | 3 | 85 °C | -40 °C | 260 | 209 | PLASTIC/EPOXY | LBGA | RECTANGULAR | GRID ARRAY, LOW PROFILE | YES | TIN SILVER COPPER | BALL | 1 mm | BOTTOM | 1.7 mm | 22 mm | 14 mm | 2017 | LBGA, | compliant | 3A991.B.2.B | 8542.32.00.41 | BGA | 209 | Taiwan | 6.5 | |||||||||||||||
IS61LV12816L-10TLI
Integrated Silicon Solution Inc
|
查询价格和库存 |
|
Yes | Yes | Active | 2.0972 Mbit | 16 | 128KX16 | 3.3 V | 10 ns | STANDARD SRAM | COMMON | 1 | 128000 | 131.072 k | ASYNCHRONOUS | 3-STATE | PARALLEL | 4 mA | 3.14 V | 65 µA | 3.63 V | 2.97 V | CMOS | INDUSTRIAL | R-PDSO-G44 | Not Qualified | e3 | 85 °C | -40 °C | 260 | 10 | 44 | PLASTIC/EPOXY | TSOP2 | TSOP44,.46,32 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE | YES | MATTE TIN | GULL WING | 800 µm | DUAL | 1.2 mm | 18.415 mm | 10.16 mm | 2070 | TSOP2, TSOP44,.46,32 | compliant | 3A991.B.2.A | 8542.32.00.41 | TSOP2 | 44 | Mainland China, Taiwan | 4.9 | ||||||||||
GS8342D18BGD-333
GSI Technology
|
查询价格和库存 |
|
Yes | Active | 37.7487 Mbit | 18 | 2MX18 | 1.8 V | 450 ps | 333 MHz | QDR SRAM | PIPELINED ARCHITECTURE | SEPARATE | 1 | 2000000 | 2.0972 M | SYNCHRONOUS | 3-STATE | PARALLEL | 205 mA | 1.7 V | 605 µA | 1.9 V | 1.7 V | CMOS | COMMERCIAL | R-PBGA-B165 | Not Qualified | e1 | 3 | 70 °C | 260 | 165 | PLASTIC/EPOXY | LBGA | BGA165,11X15,40 | RECTANGULAR | GRID ARRAY, LOW PROFILE | YES | TIN SILVER COPPER | BALL | 1 mm | BOTTOM | 1.4 mm | 15 mm | 13 mm | 2017 | LBGA, BGA165,11X15,40 | compliant | 3A991.B.2.B | 8542.32.00.41 | BGA | 165 | Taiwan | 6.7 | ||||||||||
IS62LV256AL-45TLI
Integrated Silicon Solution Inc
|
查询价格和库存 |
|
Yes | Yes | Active | 262.144 kbit | 8 | 32KX8 | 3.3 V | 45 ns | STANDARD SRAM | COMMON | 1 | 32000 | 32.768 k | ASYNCHRONOUS | 3-STATE | PARALLEL | 20 µA | 2 V | 12 µA | 3.63 V | 2.97 V | CMOS | INDUSTRIAL | R-PDSO-G28 | Not Qualified | e3 | 3 | 85 °C | -40 °C | 260 | 30 | 28 | PLASTIC/EPOXY | TSOP1 | TSSOP28,.53,22 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE | YES | MATTE TIN | GULL WING | 550 µm | DUAL | 1.2 mm | 11.8 mm | 8 mm | 2070 | TSOP1, TSSOP28,.53,22 | compliant | EAR99 | 8542.32.00.41 | TSOP | 28 | Mainland China, Taiwan | 4 | |||||||||
AS7C4096A-12JCN
Alliance Memory Inc
|
查询价格和库存 |
|
Yes | Yes | Active | 4.1943 Mbit | 8 | 512KX8 | 5 V | 12 ns | STANDARD SRAM | COMMON | 1 | 512000 | 524.288 k | ASYNCHRONOUS | 3-STATE | PARALLEL | 10 mA | 4.5 V | 140 µA | 5.5 V | 4.5 V | CMOS | COMMERCIAL | R-PDSO-J36 | Not Qualified | 3 | 70 °C | 36 | PLASTIC/EPOXY | SOJ | SOJ36,.44 | RECTANGULAR | SMALL OUTLINE | YES | J BEND | 1.27 mm | DUAL | 3.7592 mm | 23.495 mm | 10.16 mm | 1689 | compliant | 3A991.B.2.A | 8542.32.00.41 | SOJ | 36 | Taiwan | 4 | |||||||||||||||
IS62LV256AL-45ULI
Integrated Silicon Solution Inc
|
查询价格和库存 |
|
Yes | Yes | Active | 262.144 kbit | 8 | 32KX8 | 3.3 V | 45 ns | STANDARD SRAM | COMMON | 1 | 32000 | 32.768 k | ASYNCHRONOUS | 3-STATE | PARALLEL | 20 µA | 2 V | 12 µA | 3.63 V | 2.97 V | CMOS | INDUSTRIAL | R-PDSO-G28 | Not Qualified | e3 | 85 °C | -40 °C | 260 | 10 | 28 | PLASTIC/EPOXY | SOP | SOP28,.45 | RECTANGULAR | SMALL OUTLINE | YES | MATTE TIN | GULL WING | 1.27 mm | DUAL | 2.84 mm | 18.11 mm | 8.405 mm | 2070 | SOP, SOP28,.45 | compliant | EAR99 | 8542.32.00.41 | SOIC | 28 | Mainland China, Taiwan | 4 | ||||||||||
AS8C803625-QC75N
Alliance Memory Inc
|
查询价格和库存 |
|
Yes | Yes | Active | 9.4372 Mbit | 36 | 256KX36 | 3.3 V | 7.5 ns | ZBT SRAM | 1 | 256000 | 262.144 k | SYNCHRONOUS | PARALLEL | 3.465 V | 3.135 V | CMOS | COMMERCIAL | R-PQFP-G100 | 3 | 70 °C | 100 | PLASTIC/EPOXY | LQFP | RECTANGULAR | FLATPACK, LOW PROFILE | YES | GULL WING | 650 µm | QUAD | 1.6 mm | 20 mm | 14 mm | 1689 | LQFP, | compliant | 3A991.B.2.A | 8542.32.00.41 | QFP | 100 | Taiwan | 5.15 | |||||||||||||||||||||
AS6C4008-55TIN
Alliance Memory Inc
|
查询价格和库存 |
|
Yes | Yes | Active | 4.1943 Mbit | 8 | 512KX8 | 3 V | 55 ns | STANDARD SRAM | COMMON | 1 | 512000 | 524.288 k | ASYNCHRONOUS | 3-STATE | PARALLEL | 30 µA | 2 V | 60 µA | 5.5 V | 2.7 V | CMOS | INDUSTRIAL | R-PDSO-G32 | Not Qualified | 3 | 85 °C | -40 °C | 32 | PLASTIC/EPOXY | TSOP1 | TSSOP32,.8,20 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE | YES | GULL WING | 1.27 mm | DUAL | 1.2 mm | 18.4 mm | 8 mm | 1689 | TSOP1, TSSOP32,.8,20 | compliant | 3A991.B.2.A | 8542.32.00.41 | TSOP1 | 32 | Taiwan | 4 | |||||||||||||
GS8128436GB-167
GSI Technology
|
查询价格和库存 |
|
Yes | Yes | Active | 150.9949 Mbit | 36 | 4MX36 | 2.5 V | 8 ns | CACHE SRAM | PIPELINE AND FLOW THROUGH ARCHITECTURE, IT ALSO OPERATES WITH 3V TO 3.6V SUPPLY | 1 | 4000000 | 4.1943 M | SYNCHRONOUS | PARALLEL | 2.7 V | 2.3 V | CMOS | COMMERCIAL | R-PBGA-B119 | Not Qualified | e1 | 3 | 70 °C | 260 | 119 | PLASTIC/EPOXY | BGA | RECTANGULAR | GRID ARRAY | YES | TIN SILVER COPPER | BALL | 1.27 mm | BOTTOM | 1.99 mm | 22 mm | 14 mm | 2017 | BGA, | compliant | 3A991.B.2.B | 8542.32.00.41 | BGA | 119 | Taiwan | 6.8 | ||||||||||||||||
IS61C5128AS-25TLI
Integrated Silicon Solution Inc
|
查询价格和库存 |
|
Yes | Yes | Active | 4.1943 Mbit | 8 | 512KX8 | 5 V | 25 ns | STANDARD SRAM | COMMON | 1 | 512000 | 524.288 k | ASYNCHRONOUS | 3-STATE | PARALLEL | 900 µA | 2.9 V | 30 µA | 5.5 V | 4.5 V | CMOS | INDUSTRIAL | R-PDSO-G44 | Not Qualified | e3 | 85 °C | -40 °C | 260 | 10 | 44 | PLASTIC/EPOXY | TSOP2 | TSOP32,.46 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE | YES | MATTE TIN | GULL WING | 800 µm | DUAL | 1.2 mm | 18.415 mm | 10.16 mm | 2070 | TSOP2, TSOP32,.46 | compliant | 3A991.B.2.A | 8542.32.00.41 | TSOP2 | 44 | Mainland China, Taiwan | 4 | ||||||||||
IS61C6416AL-12TLI
Integrated Silicon Solution Inc
|
查询价格和库存 |
|
Yes | Yes | Active | 1.0486 Mbit | 16 | 64KX16 | 5 V | 12 ns | STANDARD SRAM | COMMON | 1 | 64000 | 65.536 k | ASYNCHRONOUS | 3-STATE | PARALLEL | 100 µA | 2 V | 55 µA | 5.5 V | 4.5 V | CMOS | INDUSTRIAL | R-PDSO-G44 | Not Qualified | e3 | 3 | 85 °C | -40 °C | 260 | 30 | 44 | PLASTIC/EPOXY | TSOP2 | TSOP44,.46,32 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE | YES | MATTE TIN | GULL WING | 800 µm | DUAL | 1.2 mm | 18.415 mm | 10.16 mm | 2070 | TSOP2, TSOP44,.46,32 | compliant | 3A991.B.2.B | 8542.32.00.41 | TSOP2 | 44 | Mainland China, Taiwan | 4 | |||||||||
AS7C31026B-10JCN
Alliance Memory Inc
|
查询价格和库存 |
|
Yes | Yes | Active | 1.0486 Mbit | 16 | 64KX16 | 3.3 V | 10 ns | STANDARD SRAM | 1 | 64000 | 65.536 k | ASYNCHRONOUS | PARALLEL | 3.6 V | 3 V | CMOS | COMMERCIAL | R-PDSO-J44 | e3/e6 | 3 | 70 °C | 44 | PLASTIC/EPOXY | SOJ | RECTANGULAR | SMALL OUTLINE | YES | J BEND | 1.27 mm | DUAL | 3.7592 mm | 28.575 mm | 10.16 mm | 1689 | compliant | 3A991.B.2.B | 8542.32.00.41 | SOJ | 44 | Taiwan | 4 | |||||||||||||||||||||
GS8182Q18BGD-200I
GSI Technology
|
查询价格和库存 |
|
Yes | Yes | Active | 18.8744 Mbit | 18 | 1MX18 | 1.8 V | 450 ps | DDR SRAM | PIPELINED ARCHITECTURE | 1 | 1000000 | 1.0486 M | SYNCHRONOUS | PARALLEL | 1.9 V | 1.7 V | CMOS | INDUSTRIAL | R-PBGA-B165 | Not Qualified | e1 | 3 | 85 °C | -40 °C | 260 | 165 | PLASTIC/EPOXY | LBGA | RECTANGULAR | GRID ARRAY, LOW PROFILE | YES | TIN SILVER COPPER | BALL | 1 mm | BOTTOM | 1.4 mm | 15 mm | 13 mm | 2017 | LBGA, | compliant | 3A991.B.2.B | 8542.32.00.41 | BGA | 165 | Taiwan | 6.7 | |||||||||||||||
CY7C1049GN30-10ZSXI
Cypress Semiconductor
|
查询价格和库存 |
|
Yes | Transferred | 4.1943 Mbit | 8 | 512KX8 | 3 V | 10 ns | STANDARD SRAM | COMMON | 1 | 1 | 512000 | 524.288 k | ASYNCHRONOUS | 3-STATE | YES | PARALLEL | 8 mA | 1 V | 45 µA | 3.6 V | 2.2 V | CMOS | INDUSTRIAL | R-PDSO-G44 | e4 | 3 | 85 °C | -40 °C | 260 | 30 | 44 | PLASTIC/EPOXY | TSOP2 | TSOP44,.46,32 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE | YES | Nickel/Palladium/Gold (Ni/Pd/Au) | GULL WING | 800 µm | DUAL | 1.194 mm | 18.415 mm | 10.16 mm | 1903 | TSOP2-44 | compliant | 3A991.B.2.A | 8542.32.00.41 | |||||||||||||
DS1995L-F5+
Analog Devices Inc
|
查询价格和库存 |
|
Yes | Active | 16.384 kbit | 1 | 16KX1 | 5 V | NON-VOLATILE SRAM | 1 | 16000 | 16.384 k | ASYNCHRONOUS | SERIAL | 6 V | 2.8 V | CMOS | OTHER | O-MEDB-N2 | Not Qualified | e3 | 70 °C | -40 °C | NOT SPECIFIED | NOT SPECIFIED | 2 | METAL | ROUND | DISK BUTTON | YES | Matte Tin (Sn) | NO LEAD | END | 1742 | MICROCAN-2 | compliant | N/A | 2 | Japan, Mainland China, Malaysia, Philipp... more | 8.5 | DS1995L-F5+ | N/A | 1999-07-19 |