Most Relevant | Technical | Compliance | Operating Conditions | Physical | Dimensions | Other | |||||||||||||||||||||||||||||||||||||||||||||
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制造商型号 |
Composite Price
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风险等级 | 是否无铅 |
是否Rohs认证
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生命周期 | 极性/信道类型 |
表面贴装
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配置 | 端子数量 | 最小漏源击穿电压 | 元件数量 | 最大漏极电流 (Abs) (ID) | 最大漏极电流 (ID) | 最大漏源导通电阻 | 其他特性 | 雪崩能效等级(Eas) | 最大反馈电容 (Crss) | FET 技术 | 工作模式 | 最大功率耗散 (Abs) | 最大脉冲漏极电流 (IDM) |
晶体管应用
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晶体管元件材料
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JEDEC-95代码 | JESD-30 代码 | JESD-609代码 | 认证状态 |
参考标准
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湿度敏感等级 | 最高工作温度 | 最低工作温度 | 峰值回流温度(摄氏度) |
处于峰值回流温度下的最长时间
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外壳连接 | 封装主体材料 | 封装形状 | 封装形式 |
端子面层
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端子形式
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端子位置
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IHS 制造商
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包装说明
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制造商包装代码
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是否符合REACH标准
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交付时间
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零件包装代码
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针数
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ECCN代码
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HTS代码
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Samacsys Description
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NVMFS5C404NLAFT1G
ON Semiconductor
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查询价格 |
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Yes | Active | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 5 | 40 V | 1 | 370 A | 370 A | 1 mΩ | 907 mJ | 79.8 pF | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 200 W | 900 A | SILICON | R-PDSO-F5 | e3 | AEC-Q101 | 1 | 175 °C | -55 °C | 260 | 10 | DRAIN | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | Tin (Sn) | FLAT | DUAL | ON SEMICONDUCTOR | SMALL OUTLINE, R-PDSO-F5 | 488AA | not_compliant | 5 weeks | |||||||||||
NVMFS5C450NLWFAFT1G
ON Semiconductor
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查询价格 |
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Yes | Active | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 5 | 40 V | 1 | 110 A | 110 A | 4.4 mΩ | 215 mJ | 42 pF | METAL SEMICONDUCTOR | ENHANCEMENT MODE | 68 W | 740 A | SILICON | R-PDSO-F5 | e3 | AEC-Q101 | 1 | 175 °C | -55 °C | DRAIN | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | Tin (Sn) | FLAT | DUAL | ON SEMICONDUCTOR | SMALL OUTLINE, R-PDSO-F5 | 488AA | not_compliant | 6 weeks | |||||||||||||
NVMFS5C404NLWFAFT1G
ON Semiconductor
|
查询价格 |
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Yes | Active | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 5 | 40 V | 1 | 370 A | 370 A | 1 mΩ | 907 mJ | 79.8 pF | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 200 W | 900 A | SILICON | R-PDSO-F5 | e3 | AEC-Q101 | 1 | 175 °C | -55 °C | 260 | 10 | DRAIN | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | Tin (Sn) | FLAT | DUAL | ON SEMICONDUCTOR | SMALL OUTLINE, R-PDSO-F5 | 488AA | not_compliant | 5 weeks | |||||||||||
IRLR120TRPBF
Vishay Siliconix
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查询价格 |
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Yes | Active | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 2 | 100 V | 1 | 7.7 A | 7.7 A | 270 mΩ | AVALANCHE RATED | 210 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 42 W | 31 A | SWITCHING | SILICON | TO-252 | R-PSSO-G2 | Not Qualified | 150 °C | 260 | 40 | DRAIN | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | GULL WING | SINGLE | VISHAY SILICONIX | SMALL OUTLINE, R-PSSO-G2 | unknown | TO-252 | 3 | EAR99 | ||||||||||||
BSP250,115
Nexperia
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查询价格 |
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Active | P-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 4 | 30 V | 1 | 3 A | 400 mΩ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 12 A | SWITCHING | SILICON | R-PDSO-G4 | e3 | 1 | DRAIN | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | Tin (Sn) | GULL WING | DUAL | NEXPERIA | SMALL OUTLINE, R-PDSO-G4 | SOT223 | compliant | SC-73 | 4 | EAR99 | 8541.21.00.75 | BSP250,115 P-Channel MOSFET, 3 A, 30 V, 4-Pin SOT-223 (SC-73) Nexperia | ||||||||||||||||
NVMFS5C460NLAFT1G
ON Semiconductor
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查询价格 |
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Yes | Active | N-CHANNEL | YES | SINGLE | 5 | 40 V | 1 | 78 A | 78 A | 7.2 mΩ | 107 mJ | 22 pF | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 50 W | 396 A | SILICON | R-PDSO-F5 | e3 | AEC-Q101 | 1 | 175 °C | -55 °C | NOT SPECIFIED | NOT SPECIFIED | DRAIN | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | Tin (Sn) | FLAT | DUAL | ON SEMICONDUCTOR | SMALL OUTLINE, R-PDSO-F5 | 488AA | not_compliant | 5 weeks | |||||||||||
IRLR120TRLPBF
Vishay Siliconix
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查询价格 |
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Yes | Active | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 2 | 100 V | 1 | 7.7 A | 7.7 A | 270 mΩ | AVALANCHE RATED | 210 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 42 W | 31 A | SWITCHING | SILICON | TO-252 | R-PSSO-G2 | Not Qualified | 150 °C | 260 | 40 | DRAIN | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | GULL WING | SINGLE | VISHAY SILICONIX | SMALL OUTLINE, R-PSSO-G2 | unknown | TO-252 | 3 | EAR99 | 8541.29.00.95 | |||||||||||
NVMFS5C468NT1G
ON Semiconductor
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查询价格 |
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Yes | Active | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 5 | 40 V | 1 | 35 A | 35 A | 12 mΩ | 75 mJ | 11 pF | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 28 W | 151 A | SILICON | R-PDSO-F5 | e3 | AEC-Q101 | 175 °C | -55 °C | NOT SPECIFIED | NOT SPECIFIED | DRAIN | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | Tin (Sn) | FLAT | DUAL | ON SEMICONDUCTOR | SMALL OUTLINE, R-PDSO-F5 | 488AA | not_compliant | 1 week | ON SEMICONDUCTOR - NVMFS5C468NT1G - MOSFET, AEC-Q101, N-CH, 40V, DFN | |||||||||||
NVMFS5C460NLWFAFT1G
ON Semiconductor
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查询价格 |
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Yes | Active | N-CHANNEL | YES | SINGLE | 5 | 40 V | 1 | 78 A | 78 A | 7.2 mΩ | 107 mJ | 22 pF | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 50 W | 396 A | SILICON | R-PDSO-F5 | e3 | AEC-Q101 | 1 | 175 °C | -55 °C | NOT SPECIFIED | NOT SPECIFIED | DRAIN | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | Tin (Sn) | FLAT | DUAL | ON SEMICONDUCTOR | SMALL OUTLINE, R-PDSO-F5 | 488AA | not_compliant | 1 week | MOSFET T6 40V NCH LL IN SO8FL | ||||||||||
SIHFR1N60A-GE3
Vishay Siliconix
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查询价格 |
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Active | N-CHANNEL | YES | Single | 1.4 A | METAL-OXIDE SEMICONDUCTOR | 36 W | 150 °C | VISHAY SILICONIX | , | unknown | EAR99 | |||||||||||||||||||||||||||||||||||||
NVTFS5C673NLTAG
ON Semiconductor
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查询价格 |
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Yes | Yes | Active | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 5 | 60 V | 1 | 13 A | 15 mΩ | 88 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 290 A | SILICON | S-PDSO-F5 | e3 | AEC-Q101 | 1 | DRAIN | PLASTIC/EPOXY | SQUARE | SMALL OUTLINE | Tin (Sn) | FLAT | DUAL | ON SEMICONDUCTOR | SMALL OUTLINE, S-PDSO-F5 | 511AB | not_compliant | 5 weeks | |||||||||||||||||
NVMFS5C426NLT1G
ON Semiconductor
|
查询价格 |
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Yes | Active | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 5 | 40 V | 1 | 237 A | 237 A | 1.8 mΩ | 453 mJ | 70 pF | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 128 W | 1.48 kA | SILICON | R-PDSO-F5 | e3 | AEC-Q101 | 175 °C | -55 °C | NOT SPECIFIED | NOT SPECIFIED | DRAIN | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | Tin (Sn) | FLAT | DUAL | ON SEMICONDUCTOR | SMALL OUTLINE, R-PDSO-F5 | 488AA | not_compliant | 5 weeks | 40V 1.2 MOHM T6 S08FL SIN | |||||||||||
NVMFS5C604NLAFT1G
ON Semiconductor
|
查询价格 |
|
Yes | Active | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 5 | 60 V | 1 | 287 A | 287 A | 1.7 mΩ | 776 mJ | 40 pF | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 200 W | 900 A | SILICON | R-PDSO-F5 | e3 | AEC-Q101 | 1 | 175 °C | -55 °C | DRAIN | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | Tin (Sn) | FLAT | DUAL | ON SEMICONDUCTOR | SMALL OUTLINE, R-PDSO-F5 | 488AA | not_compliant | 7 weeks | ON SEMICONDUCTOR - NVMFS5C604NLAFT1G - MOSFET, AEC-Q101, N-CH, 60V, DFN | ||||||||||||
RFD14N05L
ON Semiconductor
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查询价格 |
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Yes | Active | N-CHANNEL | NO | SINGLE WITH BUILT-IN DIODE | 3 | 50 V | 1 | 14 A | 14 A | 100 mΩ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 48 W | SWITCHING | SILICON | TO-251AA | R-PSIP-T3 | e3 | Not Qualified | 175 °C | NOT SPECIFIED | NOT SPECIFIED | DRAIN | PLASTIC/EPOXY | RECTANGULAR | IN-LINE | Tin (Sn) | THROUGH-HOLE | SINGLE | ON SEMICONDUCTOR | IN-LINE, R-PSIP-T3 | 369AR | not_compliant | 1 week | EAR99 | 8541.29.00.95 | Transistor,MOSFET,N Channel,RFD14N05L | |||||||||||
NVMFS5C612NLAFT1G
ON Semiconductor
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查询价格 |
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Yes | Active | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 5 | 60 V | 1 | 250 A | 250 A | 2.3 mΩ | 451 mJ | 45 pF | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 167 W | 900 A | SILICON | R-PDSO-F5 | e3 | AEC-Q101 | 1 | 175 °C | -55 °C | DRAIN | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | Tin (Sn) | FLAT | DUAL | ON SEMICONDUCTOR | SMALL OUTLINE, R-PDSO-F5 | 488AA | not_compliant | 8 weeks | MOSFET – Power, Single | ||||||||||||
HUF75339P3
ON Semiconductor
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查询价格 |
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Yes | Active | N-CHANNEL | NO | SINGLE WITH BUILT-IN DIODE | 3 | 55 V | 1 | 75 A | 75 A | 12 mΩ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 200 W | SWITCHING | SILICON | TO-220AB | R-PSFM-T3 | e3 | Not Qualified | 175 °C | NOT SPECIFIED | NOT SPECIFIED | DRAIN | PLASTIC/EPOXY | RECTANGULAR | FLANGE MOUNT | Tin (Sn) | THROUGH-HOLE | SINGLE | ON SEMICONDUCTOR | FLANGE MOUNT, R-PSFM-T3 | 340AT | compliant | 9 weeks | EAR99 | 8541.29.00.95 | N-Channel UltraFET Power MOSFET 55V, 75A, 12mΩ | |||||||||||
NVMFS5C604NLWFAFT1G
ON Semiconductor
|
查询价格 |
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Yes | Active | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 5 | 60 V | 1 | 287 A | 287 A | 1.7 mΩ | 776 mJ | 40 pF | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 200 W | 900 A | SILICON | R-PDSO-F5 | e3 | AEC-Q101 | 1 | 175 °C | -55 °C | DRAIN | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | Tin (Sn) | FLAT | DUAL | ON SEMICONDUCTOR | SMALL OUTLINE, R-PDSO-F5 | 488AA | not_compliant | 7 weeks | |||||||||||||
HUF75344G3
ON Semiconductor
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查询价格 |
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Yes | Active | N-CHANNEL | NO | SINGLE WITH BUILT-IN DIODE | 3 | 55 V | 1 | 75 A | 75 A | 8 mΩ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 285 W | SWITCHING | SILICON | TO-247 | R-PSFM-T3 | e3 | Not Qualified | 175 °C | NOT SPECIFIED | NOT SPECIFIED | DRAIN | PLASTIC/EPOXY | RECTANGULAR | FLANGE MOUNT | Tin (Sn) | THROUGH-HOLE | SINGLE | ON SEMICONDUCTOR | TO-247, 3 PIN | 340CK | not_compliant | 1 week | EAR99 | 8541.29.00.95 | ||||||||||||
FQD5N20LTM
ON Semiconductor
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查询价格 |
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Yes | Active | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 2 | 200 V | 1 | 3.8 A | 3.8 A | 1.25 Ω | 60 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 37 W | 15.2 A | SWITCHING | SILICON | TO-252 | R-PSSO-G2 | e3 | Not Qualified | 1 | 150 °C | NOT SPECIFIED | NOT SPECIFIED | DRAIN | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | Tin (Sn) | GULL WING | SINGLE | ON SEMICONDUCTOR | SMALL OUTLINE, R-PSSO-G2 | 369AS | not_compliant | 1 week | EAR99 | 8541.29.00.95 | |||||||||
BUK9608-55B,118
Nexperia
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查询价格 |
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Active | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 2 | 55 V | 1 | 75 A | 9.3 mΩ | LOGIC LEVEL COMPATIBLE | 352 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 439 A | SWITCHING | SILICON | R-PSSO-G2 | e3 | Not Qualified | 1 | 175 °C | NOT SPECIFIED | NOT SPECIFIED | DRAIN | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | Tin (Sn) | GULL WING | SINGLE | NEXPERIA | SMALL OUTLINE, R-PSSO-G2 | SOT404 | not_compliant | D2PAK | 3 | EAR99 | 8541.29.00.75 |