型号 | Most Relevant | Technical | Compliance | Operating Conditions | Physical | Other | |||||||||||||||||||||||||||||||||||||||||||||||
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数据手册 |
单价/库存
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风险等级 | 是否无铅 |
是否Rohs认证
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生命周期 | 极性/信道类型 |
表面贴装
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配置 | 端子数量 | 最小漏源击穿电压 | 元件数量 | 最大漏极电流 (ID) | 最大漏源导通电阻 | 其他特性 | 最大反馈电容 (Crss) | FET 技术 | 工作模式 | 功耗环境最大值 | 最大功率耗散 (Abs) | 最大脉冲漏极电流 (IDM) |
晶体管应用
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晶体管元件材料
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最大关闭时间(toff)
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最大开启时间(吨)
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JEDEC-95代码 | JESD-30 代码 | JESD-609代码 | 认证状态 |
参考标准
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湿度敏感等级 | 最高工作温度 | 最低工作温度 | 峰值回流温度(摄氏度) |
处于峰值回流温度下的最长时间
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封装主体材料 | 封装形状 | 封装形式 |
端子面层
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端子形式
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端子位置
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Source Content uid
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mfrid
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包装说明
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制造商包装代码
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是否符合REACH标准
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Country Of Origin
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ECCN代码
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YTEOL
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HTS代码
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零件包装代码
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针数
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2N7002T
onsemi
|
查询价格和库存 |
|
Yes | Active | N-CHANNEL | YES | SINGLE | 3 | 60 V | 1 | 115 mA | 2 Ω | 7 pF | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 200 mW | SWITCHING | SILICON | R-PDSO-F3 | e3 | 1 | 150 °C | 260 | 30 | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | Matte Tin (Sn) - annealed | FLAT | DUAL | 2N7002T | 2260 | SC-89, SOT-523F, 3 PIN | 419BG | compliant | South Korea | EAR99 | 6.5 | |||||||||||||||
DN2540N3-G
Microchip Technology Inc
|
查询价格和库存 |
|
Yes | Active | N-CHANNEL | NO | SINGLE WITH BUILT-IN DIODE | 3 | 400 V | 1 | 120 mA | 25 Ω | HIGH INPUT IMPEDANCE | 5 pF | METAL-OXIDE SEMICONDUCTOR | DEPLETION MODE | 1 W | SWITCHING | SILICON | TO-92 | O-PBCY-T3 | e3 | Not Qualified | 150 °C | -55 °C | PLASTIC/EPOXY | ROUND | CYLINDRICAL | MATTE TIN | THROUGH-HOLE | BOTTOM | DN2540N3-G | 2188 | compliant | Thailand | EAR99 | 24.48 | 8541.29.00.95 | |||||||||||||||
TN0104N3-G
Microchip Technology Inc
|
查询价格和库存 |
|
Yes | Active | N-CHANNEL | NO | SINGLE WITH BUILT-IN DIODE | 3 | 40 V | 1 | 450 mA | 1.8 Ω | LOW THRESHOLD | 15 pF | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 1 W | 1 W | SWITCHING | SILICON | TO-92 | O-PBCY-T3 | e3 | Not Qualified | 150 °C | -55 °C | PLASTIC/EPOXY | ROUND | CYLINDRICAL | MATTE TIN | THROUGH-HOLE | BOTTOM | TN0104N3-G | 2188 | GREEN PACKAGE-3 | compliant | Thailand | EAR99 | 24.48 | 8541.29.00.95 | |||||||||||||
T2N7002BK,LM
Toshiba America Electronic Components
|
查询价格和库存 |
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Yes | Active | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE AND RESISTOR | 3 | 60 V | 1 | 400 mA | 1.75 Ω | 1.3 pF | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 1 W | SWITCHING | SILICON | R-PDSO-G3 | NOT SPECIFIED | NOT SPECIFIED | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | GULL WING | DUAL | T2N7002BK,LM | 2484 | SOT-23, 3 PIN | unknown | EAR99 | 6.5 | |||||||||||||||||||||
2N7002BK,215
Nexperia
|
查询价格和库存 |
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Yes | Active | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 3 | 60 V | 1 | 350 mA | 1.6 Ω | LOGIC LEVEL COMPATIBLE | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | SWITCHING | SILICON | TO-236AB | R-PDSO-G3 | e3 | AEC-Q101 | 1 | 150 °C | -55 °C | 260 | 30 | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | TIN | GULL WING | DUAL | 2N7002BK,215 | 229119436 | ROHS COMPLIANT, PLASTIC PACKAGE-3 | SOT23 | compliant | Mainland China | EAR99 | 6.5 | TO-236 | 3 | |||||||||||
VN1206L-G
Microchip Technology Inc
|
查询价格和库存 |
|
Yes | Active | N-CHANNEL | NO | SINGLE WITH BUILT-IN DIODE | 3 | 120 V | 1 | 230 mA | 6 Ω | 20 pF | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 1 W | SWITCHING | SILICON | TO-92 | O-PBCY-T3 | e3 | Not Qualified | 150 °C | -55 °C | PLASTIC/EPOXY | ROUND | CYLINDRICAL | MATTE TIN | THROUGH-HOLE | BOTTOM | VN1206L-G | 2188 | CYLINDRICAL, O-PBCY-T3 | compliant | Thailand | EAR99 | 24.48 | 8541.29.00.95 | |||||||||||||||
2N7000_D74Z
onsemi
|
查询价格和库存 |
|
Yes | Active | N-CHANNEL | NO | SINGLE WITH BUILT-IN DIODE | 3 | 60 V | 1 | 200 mA | 5 Ω | 5 pF | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 400 mW | SWITCHING | SILICON | TO-92 | O-PBCY-T3 | e3 | Not Qualified | 150 °C | -55 °C | PLASTIC/EPOXY | ROUND | CYLINDRICAL | MATTE TIN | THROUGH-HOLE | BOTTOM | 2N7000_D74Z | 2260 | CYLINDRICAL, O-PBCY-T3 | compliant | Mainland China | EAR99 | 6.05 | ||||||||||||||||
TN2640N3-G
Microchip Technology Inc
|
查询价格和库存 |
|
Yes | Active | N-CHANNEL | NO | SINGLE WITH BUILT-IN DIODE | 3 | 400 V | 1 | 220 mA | 5 Ω | 15 pF | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 740 mW | 740 mW | 2 A | SWITCHING | SILICON | 52 ns | 35 ns | TO-92 | O-PBCY-W3 | e3 | Not Qualified | 150 °C | -55 °C | PLASTIC/EPOXY | ROUND | CYLINDRICAL | MATTE TIN | WIRE | BOTTOM | TN2640N3-G | 2188 | GREEN PACKAGE-3 | compliant | Thailand | EAR99 | 24.48 | 8541.29.00.95 | |||||||||||
SSM3J168F,LF
Toshiba America Electronic Components
|
查询价格和库存 |
|
Active | NOT SPECIFIED | NOT SPECIFIED | 2484 | unknown | EAR99 | |||||||||||||||||||||||||||||||||||||||||||||
VN2460N3-G
Microchip Technology Inc
|
查询价格和库存 |
|
Yes | Active | N-CHANNEL | NO | SINGLE WITH BUILT-IN DIODE | 3 | 600 V | 1 | 160 mA | 25 Ω | LOW THRESHOLD | 25 pF | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 1 W | 1 W | SWITCHING | SILICON | TO-92 | O-PBCY-T3 | e3 | Not Qualified | 150 °C | -55 °C | PLASTIC/EPOXY | ROUND | CYLINDRICAL | MATTE TIN | THROUGH-HOLE | BOTTOM | VN2460N3-G | 2188 | TO-92, 3 PIN | compliant | Thailand | EAR99 | 24.48 | 8541.29.00.95 | |||||||||||||
VP0550N3-G
Microchip Technology Inc
|
查询价格和库存 |
|
Yes | Active | P-CHANNEL | NO | SINGLE WITH BUILT-IN DIODE | 3 | 500 V | 1 | 54 mA | 125 Ω | 10 pF | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 1 W | SWITCHING | SILICON | TO-92 | O-PBCY-T3 | e3 | Not Qualified | 150 °C | -55 °C | PLASTIC/EPOXY | ROUND | CYLINDRICAL | MATTE TIN | THROUGH-HOLE | BOTTOM | VP0550N3-G | 2188 | GREEN PACKAGE-3 | compliant | Thailand | EAR99 | 24.48 | 8541.29.00.95 | |||||||||||||||
VN0550N3-G
Microchip Technology Inc
|
查询价格和库存 |
|
Yes | Active | N-CHANNEL | NO | SINGLE WITH BUILT-IN DIODE | 3 | 500 V | 1 | 50 mA | 60 Ω | LOW THRESHOLD | 5 pF | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 1 W | 1 W | SWITCHING | SILICON | TO-92 | O-PBCY-T3 | e3 | Not Qualified | 150 °C | -55 °C | PLASTIC/EPOXY | ROUND | CYLINDRICAL | MATTE TIN | THROUGH-HOLE | BOTTOM | VN0550N3-G | 2188 | GREEN PACKAGE-3 | compliant | Thailand | EAR99 | 24.48 | 8541.29.00.95 | |||||||||||||
BSS84PH6327XTSA2
Infineon Technologies AG
|
查询价格和库存 |
|
Yes | Active | P-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 3 | 60 V | 1 | 170 mA | 8 Ω | LOGIC LEVEL COMPATIBLE, AVALANCHE RATED | 3 pF | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 360 mW | SWITCHING | SILICON | R-PDSO-G3 | e3 | AEC-Q101 | 1 | 150 °C | -55 °C | NOT SPECIFIED | NOT SPECIFIED | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | Tin (Sn) | GULL WING | DUAL | BSS84PH6327XTSA2 | 2065 | SMALL OUTLINE, R-PDSO-G3 | compliant | Mainland China | EAR99 | 6.5 | |||||||||||||
VP2206N3-G
Microchip Technology Inc
|
查询价格和库存 |
|
Yes | Active | P-CHANNEL | NO | SINGLE WITH BUILT-IN DIODE | 3 | 60 V | 1 | 640 mA | 900 mΩ | 40 pF | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 740 mW | 740 mW | SWITCHING | SILICON | TO-92 | O-PBCY-T3 | e3 | Not Qualified | 150 °C | -55 °C | PLASTIC/EPOXY | ROUND | CYLINDRICAL | MATTE TIN | THROUGH-HOLE | BOTTOM | VP2206N3-G | 2188 | compliant | Thailand | EAR99 | 24.48 | 8541.29.00.95 | |||||||||||||||
NTZD3154NT1G
onsemi
|
查询价格和库存 |
|
Yes | Active | N-CHANNEL | YES | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | 6 | 20 V | 2 | 540 mA | 550 mΩ | 20 pF | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 250 mW | SWITCHING | SILICON | R-PDSO-F6 | e3 | Not Qualified | 1 | 150 °C | 260 | 30 | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | Matte Tin (Sn) - annealed | FLAT | DUAL | NTZD3154NT1G | 2260 | 1.60 X 1.60 MM, LEAD FREE, CASE 463A-01, 6 PIN | 463A-01 | compliant | Mainland China | EAR99 | 6.8 | SOT-563, 6 LEAD | 6 | ||||||||||||
BSS84Q-7-F
Diodes Incorporated
|
查询价格和库存 |
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Yes | Yes | Active | P-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 3 | 50 V | 1 | 130 mA | 10 Ω | HIGH RELIABILITY, LOW THRESHOLD | 12 pF | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 300 mW | SWITCHING | SILICON | R-PDSO-G3 | e3 | 1 | 150 °C | 260 | 30 | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | MATTE TIN | GULL WING | DUAL | 1926 | compliant | EAR99 | 6.5 | 3 | ||||||||||||||||
FDV303N
onsemi
|
查询价格和库存 |
|
Yes | Active | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 3 | 25 V | 1 | 680 mA | 450 mΩ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 350 mW | SWITCHING | SILICON | R-PDSO-G3 | e3 | Not Qualified | 1 | 150 °C | -55 °C | 260 | 30 | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | MATTE TIN | GULL WING | DUAL | FDV303N | 2260 | 318-08 | compliant | Mainland China | EAR99 | 6.9 | |||||||||||||||
J109
onsemi
|
查询价格和库存 |
|
Yes | Active | N-CHANNEL | NO | SINGLE | 3 | 1 | 12 Ω | 15 pF | JUNCTION | DEPLETION MODE | 400 mW | SWITCHING | SILICON | TO-92 | O-PBCY-T3 | e3 | Not Qualified | 150 °C | PLASTIC/EPOXY | ROUND | CYLINDRICAL | MATTE TIN | THROUGH-HOLE | BOTTOM | J109 | 2260 | TO-92, 3 PIN | 135AN | compliant | Mainland China | EAR99 | 6.05 | ||||||||||||||||||
FDC604P
onsemi
|
查询价格和库存 |
|
Yes | Active | P-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 6 | 20 V | 1 | 5.5 A | 31 mΩ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 1.6 W | SWITCHING | SILICON | R-PDSO-G6 | e3 | Not Qualified | 1 | 150 °C | -55 °C | 260 | 30 | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | MATTE TIN | GULL WING | DUAL | FDC604P | 2260 | SUPERSOT-6 | 419BL | compliant | Philippines | EAR99 | 7.07 | ||||||||||||||
FDN360P
onsemi
|
查询价格和库存 |
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Yes | Active | P-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 3 | 30 V | 1 | 2 A | 80 mΩ | LOGIC LEVEL COMPATIBLE | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 500 mW | SWITCHING | SILICON | R-PDSO-G3 | e3 | Not Qualified | 1 | 150 °C | 260 | 30 | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | MATTE TIN | GULL WING | DUAL | FDN360P | 2260 | SUPERSOT-3 | 527AG | compliant | Philippines | EAR99 | 6.95 |