型号 | Most Relevant | Technical | Compliance | Operating Conditions | Physical | Other | |||||||||||||||||||||||||||||||||||||||||||||
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数据手册 |
单价/库存
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风险等级 | 是否无铅 |
是否Rohs认证
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生命周期 | 极性/信道类型 |
表面贴装
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配置 | 端子数量 | 最小漏源击穿电压 | 元件数量 | 最大漏极电流 (ID) | 最大漏源导通电阻 | 其他特性 | 雪崩能效等级(Eas) | 最大反馈电容 (Crss) | FET 技术 | 工作模式 | 最大功率耗散 (Abs) | 最大脉冲漏极电流 (IDM) |
晶体管应用
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晶体管元件材料
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JEDEC-95代码 | JESD-30 代码 | JESD-609代码 | 认证状态 |
参考标准
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湿度敏感等级 | 最高工作温度 | 最低工作温度 | 峰值回流温度(摄氏度) |
处于峰值回流温度下的最长时间
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外壳连接 | 封装主体材料 | 封装形状 | 封装形式 |
端子面层
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端子形式
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端子位置
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mfrid
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零件包装代码
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包装说明
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针数
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是否符合REACH标准
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ECCN代码
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YTEOL
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Source Content uid
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制造商包装代码
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Country Of Origin
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IRFRC20TRLPBF
Vishay Intertechnologies
|
查询价格和库存 |
|
Yes | Yes | Active | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 2 | 600 V | 1 | 2 A | 4.4 Ω | AVALANCHE RATED | 450 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 42 W | 8 A | SWITCHING | SILICON | TO-252AA | R-PSSO-G2 | e3 | Not Qualified | 1 | 150 °C | 260 | 10 | DRAIN | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | MATTE TIN | GULL WING | SINGLE | 2516 | TO-252AA | ROHS COMPLIANT, DPAK-3 | 3 | not_compliant | EAR99 | 6.3 | ||||||||
IRF9640STRRPBF
Vishay Intertechnologies
|
查询价格和库存 |
|
Yes | Yes | Active | P-CHANNEL | YES | SINGLE | 2 | 200 V | 1 | 11 A | 500 mΩ | 700 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 125 W | 44 A | SWITCHING | SILICON | TO-263AB | R-PSSO-G2 | e3 | Not Qualified | 1 | 150 °C | 260 | 10 | DRAIN | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | MATTE TIN | GULL WING | SINGLE | 2516 | D2PAK | SMALL OUTLINE, R-PSSO-G2 | 4 | not_compliant | EAR99 | 5.97 | |||||||||
BUZ11-NR4941
onsemi
|
查询价格和库存 |
|
Yes | Active | N-CHANNEL | NO | SINGLE WITH BUILT-IN DIODE | 3 | 50 V | 1 | 30 A | 40 mΩ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 75 W | 120 A | SWITCHING | SILICON | TO-220AB | R-PSFM-T3 | e3 | 150 °C | DRAIN | PLASTIC/EPOXY | RECTANGULAR | FLANGE MOUNT | MATTE TIN | THROUGH-HOLE | SINGLE | 2260 | TO-220 3L | TO-220AB, 3 PIN | not_compliant | EAR99 | 5.15 | BUZ11-NR4941 | 340AT | Mainland China | |||||||||||||
IRFR220PBF
Vishay Intertechnologies
|
查询价格和库存 |
|
Yes | Active | N-CHANNEL | YES | SINGLE | 2 | 200 V | 1 | 4.8 A | 800 mΩ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 42 W | SWITCHING | SILICON | TO-252AA | R-PSSO-G2 | e3 | Not Qualified | 1 | 150 °C | -55 °C | 260 | 30 | DRAIN | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | MATTE TIN | GULL WING | SINGLE | 2516 | not_compliant | 5.85 | |||||||||||||||
IRF820SPBF
Vishay Intertechnologies
|
查询价格和库存 |
|
Yes | Yes | Active | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 2 | 500 V | 1 | 2.5 A | 3 Ω | AVALANCHE RATED | 210 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 50 W | 8 A | SWITCHING | SILICON | TO-263AB | R-PSSO-G2 | e3 | Not Qualified | 1 | 150 °C | 260 | 30 | DRAIN | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | MATTE TIN | GULL WING | SINGLE | 2516 | D2PAK | LEAD FREE, SMD-220, D2PAK-3 | 4 | compliant | EAR99 | 6.3 | ||||||||
IRLR8726TRPBF
Infineon Technologies AG
|
查询价格和库存 |
|
Yes | Active | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 2 | 30 V | 1 | 86 A | 58 mΩ | 120 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 75 W | 340 A | SWITCHING | SILICON | TO-252AA | R-PSSO-G2 | e3 | Not Qualified | 1 | 175 °C | NOT SPECIFIED | NOT SPECIFIED | DRAIN | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | Matte Tin (Sn) - with Nickel (Ni) barrier | GULL WING | SINGLE | 2065 | compliant | EAR99 | 5.32 | IRLR8726TRPBF | ||||||||||||
IRFR2405TRPBF
Infineon Technologies AG
|
查询价格和库存 |
|
Yes | Active | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 2 | 55 V | 1 | 30 A | 16 mΩ | AVALANCHE RATED, HIGH RELIABILITY | 130 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 110 W | 220 A | SWITCHING | SILICON | TO-252AA | R-PSSO-G2 | e3 | Not Qualified | 1 | 175 °C | 260 | 30 | DRAIN | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | Matte Tin (Sn) - with Nickel (Ni) barrier | GULL WING | SINGLE | 2065 | not_compliant | EAR99 | 5.55 | IRFR2405TRPBF | |||||||||||
IRFR4104TRPBF
Infineon Technologies AG
|
查询价格和库存 |
|
Yes | Active | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 2 | 40 V | 1 | 42 A | 5.5 mΩ | AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE | 145 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 140 W | 480 A | SWITCHING | SILICON | TO-252AA | R-PSSO-G2 | e3 | Not Qualified | 1 | 175 °C | 260 | 30 | DRAIN | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | Matte Tin (Sn) - with Nickel (Ni) barrier | GULL WING | SINGLE | 2065 | LEAD FREE, PLASTIC, DPAK-3 | not_compliant | EAR99 | 5.6 | IRFR4104TRPBF | ||||||||||
IRF510SPBF
Vishay Intertechnologies
|
查询价格和库存 |
|
Yes | Yes | Active | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 2 | 100 V | 1 | 5.6 A | 540 mΩ | AVALANCHE RATED | 100 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 43 W | 20 A | SWITCHING | SILICON | TO-263AB | R-PSSO-G2 | e3 | Not Qualified | 1 | 175 °C | DRAIN | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | MATTE TIN | GULL WING | SINGLE | 2516 | D2PAK | SMALL OUTLINE, R-PSSO-G2 | 4 | not_compliant | EAR99 | 5.4 | ||||||||||
BSC014N04LSATMA1
Infineon Technologies AG
|
查询价格和库存 |
|
No | Yes | Active | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 8 | 40 V | 1 | 32 A | 1.9 mΩ | ULTRA LOW RESISTANCE, LOGIC LEVEL COMPATIBLE | 170 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 400 A | SWITCHING | SILICON | R-PDSO-F8 | e3 | 1 | NOT SPECIFIED | NOT SPECIFIED | DRAIN | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | Tin (Sn) | FLAT | DUAL | 2065 | SMALL OUTLINE, R-PDSO-F3 | 8 | not_compliant | EAR99 | 5.6 | BSC014N04LSATMA1 | ||||||||||||
IRLR3410TRLPBF
Infineon Technologies AG
|
查询价格和库存 |
|
Yes | Active | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 2 | 100 V | 1 | 17 A | 125 mΩ | AVALANCHE RATED, ULTRA-LOW RESISTANCE | 150 mJ | 90 pF | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 79 W | 60 A | SWITCHING | SILICON | TO-252AA | R-PSSO-G2 | e3 | Not Qualified | 1 | 175 °C | -55 °C | 260 | 30 | DRAIN | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | Matte Tin (Sn) - with Nickel (Ni) barrier | GULL WING | SINGLE | 2065 | SMALL OUTLINE, R-PSSO-G2 | not_compliant | EAR99 | 5.6 | IRLR3410TRLPBF | ||||||||
IRL540SPBF
Vishay Intertechnologies
|
查询价格和库存 |
|
Yes | Yes | Active | N-CHANNEL | YES | SINGLE | 2 | 100 V | 1 | 28 A | 77 mΩ | LOGIC LEVEL COMPATIBLE | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 150 W | SWITCHING | SILICON | TO-263AB | R-PSSO-G2 | Not Qualified | 3 | 175 °C | 260 | 30 | DRAIN | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | GULL WING | SINGLE | 2516 | D2PAK | SMALL OUTLINE, R-PSSO-G2 | 3 | compliant | EAR99 | 5.75 | ||||||||||||
IRLR2905ZTRPBF
Infineon Technologies AG
|
查询价格和库存 |
|
Yes | Active | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 2 | 55 V | 1 | 42 A | 13.5 mΩ | AVALANCHE RATED, HIGH RELIABILITY, LOGIC LEVEL COMPATIBLE, ULTRA-LOW RESISTANCE | 85 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 110 W | 240 A | SWITCHING | SILICON | TO-252AA | R-PSSO-G2 | e3 | Not Qualified | 1 | 175 °C | NOT SPECIFIED | NOT SPECIFIED | DRAIN | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | Matte Tin (Sn) - with Nickel (Ni) barrier | GULL WING | SINGLE | 2065 | compliant | EAR99 | 5.55 | IRLR2905ZTRPBF | Mainland China | ||||||||||
IRFR2407TRPBF
Infineon Technologies AG
|
查询价格和库存 |
|
Yes | Active | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 2 | 75 V | 1 | 30 A | 26 mΩ | AVALANCHE RATED, HIGH RELIABILITY | 130 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 110 W | 170 A | SWITCHING | SILICON | TO-252AA | R-PSSO-G2 | e3 | Not Qualified | 1 | 175 °C | 260 | 30 | DRAIN | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | Tin (Sn) | GULL WING | SINGLE | 2065 | not_compliant | EAR99 | 5.85 | IRFR2407TRPBF | |||||||||||
ECH8655R-TL-H
onsemi
|
查询价格和库存 |
|
Yes | Active | e6 | 1 | 260 | 30 | Tin/Bismuth (Sn/Bi) | 2260 | SOT-28FL / ECH8 | 8 | not_compliant | EAR99 | ECH8655R-TL-H | 318BF | |||||||||||||||||||||||||||||||||||
IRL1404ZSTRLPBF
Infineon Technologies AG
|
查询价格和库存 |
|
Yes | Active | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 2 | 40 V | 1 | 75 A | 3.1 mΩ | AVALANCHE RATED, HIGH RELIABILITY, LOGIC LEVEL COMPATIBLE, ULTRA-LOW RESISTANCE | 220 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 230 W | 790 A | SWITCHING | SILICON | TO-263AB | R-PSSO-G2 | e3 | Not Qualified | 1 | 175 °C | 260 | 30 | DRAIN | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | Matte Tin (Sn) - with Nickel (Ni) barrier | GULL WING | SINGLE | 2065 | SMALL OUTLINE, R-PSSO-G2 | not_compliant | EAR99 | 5.6 | IRL1404ZSTRLPBF | ||||||||||
IRFR24N15DTRPBF
Infineon Technologies AG
|
查询价格和库存 |
|
Yes | Active | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 2 | 150 V | 1 | 24 A | 95 mΩ | 170 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 140 W | 96 A | SWITCHING | SILICON | TO-252AA | R-PSSO-G2 | e3 | Not Qualified | 1 | 175 °C | 260 | 30 | DRAIN | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | Matte Tin (Sn) - with Nickel (Ni) barrier | GULL WING | SINGLE | 2065 | not_compliant | EAR99 | 6 | IRFR24N15DTRPBF | Mainland China | |||||||||||
FDB120N10
onsemi
|
查询价格和库存 |
|
Yes | Active | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 2 | 100 V | 1 | 74 A | 12 mΩ | 198 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 170 W | 296 A | SWITCHING | SILICON | TO-263AB | R-PSSO-G2 | e3 | Not Qualified | 1 | 175 °C | 245 | 30 | DRAIN | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | Matte Tin (Sn) - annealed | GULL WING | SINGLE | 2260 | D2PAK-3 | not_compliant | EAR99 | 5.85 | FDB120N10 | 418AJ | Mainland China, Malaysia | |||||||||
IRFR024NTRPBF
Infineon Technologies AG
|
查询价格和库存 |
|
Yes | Active | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 2 | 55 V | 1 | 17 A | 75 mΩ | AVALANCHE RATED, ULTRA-LOW RESISTANCE | 71 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 45 W | 68 A | SWITCHING | SILICON | TO-252AA | R-PSSO-G2 | e3 | Not Qualified | 1 | 175 °C | 260 | 30 | DRAIN | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | Matte Tin (Sn) - with Nickel (Ni) barrier | GULL WING | SINGLE | 2065 | not_compliant | EAR99 | 5.4 | IRFR024NTRPBF | |||||||||||
BSC014N04LS
Infineon Technologies AG
|
查询价格和库存 |
|
No | Yes | Active | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 8 | 40 V | 1 | 170 A | 1.9 mΩ | 170 mJ | 200 pF | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 96 W | 792 A | SWITCHING | SILICON | R-PDSO-F8 | e3 | IEC-61249-2-21 | 1 | 150 °C | -55 °C | NOT SPECIFIED | NOT SPECIFIED | DRAIN | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | Tin (Sn) | FLAT | DUAL | 2065 | TDSON-8FL, 8 PIN | 8 | not_compliant | EAR99 | 5.6 | BSC014N04LS |