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功率场效应晶体管:

180,338 个筛选结果
功率场效应晶体管(VF)又称VMOS场效应管。在实际应用中,它有着比晶体管和MOS场效应管更好的特性。
IGBT (26,751)
型号
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配置 (50)
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最小漏源击穿电压 (50)
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最大漏极电流 (ID) (50)
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最大漏源导通电阻 (50)
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制造商 (50)
元件数量 (9)
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端子数量 (40)
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极性/信道类型 (5)
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型号
型号 Most Relevant Technical Compliance Operating Conditions Physical Other
数据手册 单价/库存
风险等级 是否无铅 是否Rohs认证
生命周期 极性/信道类型 表面贴装
配置 端子数量 最小漏源击穿电压 元件数量 最大漏极电流 (ID) 最大漏源导通电阻 其他特性 雪崩能效等级(Eas) 最大反馈电容 (Crss) FET 技术 工作模式 功耗环境最大值 最大功率耗散 (Abs) 最大脉冲漏极电流 (IDM) 晶体管应用
晶体管元件材料
最大关闭时间(toff)
最大开启时间(吨)
JEDEC-95代码 JESD-30 代码 JESD-609代码 认证状态 参考标准
湿度敏感等级 最高工作温度 最低工作温度 峰值回流温度(摄氏度) 处于峰值回流温度下的最长时间
外壳连接 封装主体材料 封装形状 封装形式 端子面层
端子形式
端子位置
Source Content uid
mfrid
是否符合REACH标准
ECCN代码
YTEOL
零件包装代码
针数
包装说明
制造商包装代码
Country Of Origin
HTS代码
IRFR2307ZTRLPBF
Infineon Technologies AG
查询价格和库存
Yes Active N-CHANNEL YES SINGLE WITH BUILT-IN DIODE 2 75 V 1 42 A 16 mΩ AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE 100 mJ METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 110 W 210 A SWITCHING SILICON TO-252AA R-PSSO-G2 e3 Not Qualified 1 175 °C 260 30 DRAIN PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE Matte Tin (Sn) - with Nickel (Ni) barrier GULL WING SINGLE IRFR2307ZTRLPBF 2065 not_compliant EAR99 5.85
IRFR9210TRPBF
Vishay Intertechnologies
查询价格和库存
Yes Yes Active P-CHANNEL YES SINGLE WITH BUILT-IN DIODE 2 200 V 1 1.9 A 3 Ω AVALANCHE RATED 300 mJ METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 25 W 7.6 A SWITCHING SILICON TO-252AA R-PSSO-G2 e3 Not Qualified 1 150 °C 260 30 DRAIN PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE MATTE TIN GULL WING SINGLE 2516 compliant EAR99 5.95 TO-252AA 3
FDWS86368-F085
onsemi
查询价格和库存
Yes Active N-CHANNEL YES SINGLE WITH BUILT-IN DIODE 5 80 V 1 80 A 4.5 mΩ 82 mJ 20 pF METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 214 W SWITCHING SILICON 59 ns 60 ns MO-240AA R-PDSO-F5 e3 AEC-Q101 1 175 °C -55 °C 260 30 DRAIN PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE Matte Tin (Sn) - annealed FLAT DUAL FDWS86368-F085 2260 not_compliant EAR99 5.9 DFN-8 507AU Philippines
IRFR3411TRPBF
Infineon Technologies AG
查询价格和库存
Yes Active N-CHANNEL YES SINGLE WITH BUILT-IN DIODE 2 100 V 1 32 A 44 mΩ AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE 185 mJ METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 130 W 110 A SWITCHING SILICON TO-252AA R-PSSO-G2 e3 Not Qualified 1 175 °C -55 °C 260 30 DRAIN PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE Matte Tin (Sn) - with Nickel (Ni) barrier GULL WING SINGLE IRFR3411TRPBF 2065 not_compliant EAR99 5.85
IRFBC40STRLPBF
Vishay Intertechnologies
查询价格和库存
Yes Yes Active N-CHANNEL YES SINGLE WITH BUILT-IN DIODE 2 600 V 1 6.2 A 1.2 Ω AVALANCHE RATED 570 mJ METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 130 W 25 A SWITCHING SILICON R-PSSO-G2 e3 Not Qualified 1 150 °C 260 30 DRAIN PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE Matte Tin (Sn) GULL WING SINGLE 2516 compliant EAR99 6.3 3 SMALL OUTLINE, R-PSSO-G2
IRFR220NTRPBF
Infineon Technologies AG
查询价格和库存
Yes Active N-CHANNEL YES SINGLE WITH BUILT-IN DIODE 2 200 V 1 5 A 600 mΩ 46 mJ METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 43 W 20 A SWITCHING SILICON TO-252AA R-PSSO-G2 e3 Not Qualified 1 175 °C 260 30 DRAIN PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE Matte Tin (Sn) - with Nickel (Ni) barrier GULL WING SINGLE IRFR220NTRPBF 2065 not_compliant EAR99 5.85
IRF2807STRLPBF
Infineon Technologies AG
查询价格和库存
Yes Active N-CHANNEL YES SINGLE WITH BUILT-IN DIODE 2 75 V 1 75 A 13 mΩ AVALANCHE RATED, HIGH RELIABILITY, ULTRA LOW RESISTANCE 340 mJ METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 230 W 280 A SWITCHING SILICON R-PSSO-G2 e3 Not Qualified 1 175 °C 260 30 DRAIN PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE Matte Tin (Sn) - with Nickel (Ni) barrier GULL WING SINGLE IRF2807STRLPBF 2065 not_compliant EAR99 5.85
FDD8896
onsemi
查询价格和库存
Yes Active N-CHANNEL YES SINGLE WITH BUILT-IN DIODE 2 30 V 1 17 A 68 mΩ 168 mJ METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 80 W SWITCHING SILICON TO-252AA R-PSSO-G2 e3 Not Qualified 1 175 °C 260 30 DRAIN PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE Matte Tin (Sn) - annealed GULL WING SINGLE FDD8896 2260 not_compliant EAR99 5.32 DPAK-3 369AS Mainland China
IRLR3105TRPBF
Infineon Technologies AG
查询价格和库存
Yes Active N-CHANNEL YES SINGLE WITH BUILT-IN DIODE 2 55 V 1 25 A 37 mΩ AVALANCHE RATED, HIGH RELIABILITY, LOGIC LEVEL COMPATIBLE, ULTRA-LOW RESISTANCE 61 mJ METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 57 W 100 A SWITCHING SILICON TO-252AA R-PSSO-G2 e3 Not Qualified 1 175 °C 260 30 DRAIN PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE Matte Tin (Sn) - with Nickel (Ni) barrier GULL WING SINGLE IRLR3105TRPBF 2065 not_compliant EAR99 5.55 SMALL OUTLINE, R-PSSO-G2 Mainland China
IRFR120NTRPBF
Infineon Technologies AG
查询价格和库存
Yes Active N-CHANNEL YES SINGLE WITH BUILT-IN DIODE 2 100 V 1 9.4 A 210 mΩ AVALANCHE RATED 91 mJ METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 48 W 38 A SWITCHING SILICON TO-252AA R-PSSO-G2 e3 Not Qualified 1 175 °C -55 °C 260 30 DRAIN PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE Matte Tin (Sn) - with Nickel (Ni) barrier GULL WING SINGLE IRFR120NTRPBF 2065 not_compliant EAR99 5.6 Mainland China
IRF3415STRLPBF
Infineon Technologies AG
查询价格和库存
Yes Active N-CHANNEL YES SINGLE WITH BUILT-IN DIODE 2 150 V 1 43 A 42 mΩ AVALANCHE RATED, HIGH RELIABILITY 590 mJ METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 150 A SWITCHING SILICON R-PSSO-G2 e3 Not Qualified 1 260 30 DRAIN PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE Matte Tin (Sn) - with Nickel (Ni) barrier GULL WING SINGLE IRF3415STRLPBF 2065 not_compliant EAR99 6.12 Mainland China
IRL3705NSTRLPBF
Infineon Technologies AG
查询价格和库存
Yes Active N-CHANNEL YES SINGLE WITH BUILT-IN DIODE 2 55 V 1 89 A 12 mΩ AVALANCHE RATED, HIGH RELIABILITY 340 mJ METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 310 A SWITCHING SILICON R-PSSO-G2 e3 Not Qualified 1 260 30 DRAIN PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE Matte Tin (Sn) - with Nickel (Ni) barrier GULL WING SINGLE IRL3705NSTRLPBF 2065 not_compliant EAR99 5.55
IRLML6402TRPBF
Infineon Technologies AG
查询价格和库存
Yes Active P-CHANNEL YES SINGLE WITH BUILT-IN DIODE 3 20 V 1 3.7 A 65 mΩ ULTRA LOW RESISTANCE 11 mJ 110 pF METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 1.3 W 1.3 W 22 A SWITCHING SILICON TO-236AB R-PDSO-G3 e3 Not Qualified 1 150 °C -55 °C 260 30 PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE Matte Tin (Sn) GULL WING DUAL IRLML6402TRPBF 2065 compliant EAR99 5.32 SOT-23, 3 PIN Mainland China 8541.29.00.95
IRF1010ESTRLPBF
Infineon Technologies AG
查询价格和库存
Yes Not Recommended N-CHANNEL YES SINGLE WITH BUILT-IN DIODE 2 60 V 1 75 A 12 mΩ AVALANCHE RATED, HIGH RELIABILITY 320 mJ METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 200 W 330 A SWITCHING SILICON R-PSSO-G2 e3 Not Qualified 1 175 °C 260 30 DRAIN PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE Matte Tin (Sn) - with Nickel (Ni) barrier GULL WING SINGLE IRF1010ESTRLPBF 2065 not_compliant EAR99 3
IRFZ44NPBF
Infineon Technologies AG
查询价格和库存
Yes Active N-CHANNEL NO SINGLE WITH BUILT-IN DIODE 3 55 V 1 49 A 17.5 mΩ AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE 150 mJ METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 94 W 160 A SWITCHING SILICON TO-220AB R-PSFM-T3 e3 Not Qualified 175 °C NOT SPECIFIED NOT SPECIFIED DRAIN PLASTIC/EPOXY RECTANGULAR FLANGE MOUNT Matte Tin (Sn) - with Nickel (Ni) barrier THROUGH-HOLE SINGLE IRFZ44NPBF 2065 compliant EAR99 5.15
IRFR3806TRPBF
Infineon Technologies AG
查询价格和库存
Yes Active N-CHANNEL YES SINGLE WITH BUILT-IN DIODE 2 60 V 1 43 A 15.8 mΩ 73 mJ METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 71 W 170 A SWITCHING SILICON TO-252AA R-PSSO-G2 e3 Not Qualified 1 175 °C 260 30 PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE Matte Tin (Sn) - with Nickel (Ni) barrier GULL WING SINGLE IRFR3806TRPBF 2065 not_compliant EAR99 5.55 SMALL OUTLINE, R-PSSO-G2
FQD8P10TM-F085
onsemi
查询价格和库存
Yes Active P-CHANNEL YES SINGLE WITH BUILT-IN DIODE 2 100 V 1 6.6 A 530 mΩ 150 mJ METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 44 W 26.4 A SWITCHING SILICON R-PSSO-G2 e3 Not Qualified 1 150 °C 260 30 DRAIN PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE Matte Tin (Sn) - annealed GULL WING SINGLE FQD8P10TM-F085 2260 not_compliant EAR99 5.4 TO-252 3L (DPAK) ROHS COMPLIANT, DPAK-3 369AS Mainland China
IRLR120TRLPBF
Vishay Intertechnologies
查询价格和库存
Yes Active N-CHANNEL YES SINGLE WITH BUILT-IN DIODE 2 100 V 1 7.7 A 270 mΩ AVALANCHE RATED 210 mJ METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 42 W 31 A SWITCHING SILICON TO-252 R-PSSO-G2 Not Qualified 150 °C 260 40 DRAIN PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE GULL WING SINGLE 2516 compliant EAR99 5.6
NVMFS4C05NWFT1G
onsemi
查询价格和库存
Yes Active N-CHANNEL YES SINGLE 1 116 A METAL-OXIDE SEMICONDUCTOR 79 W e3 1 175 °C 260 30 Matte Tin (Sn) - annealed NVMFS4C05NWFT1G 2260 not_compliant EAR99 DFN5 5X6, 1.27P (SO 8FL) 507BE
IRF7303TRPBF
Infineon Technologies AG
查询价格和库存
Yes Active N-CHANNEL YES SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE 8 30 V 2 4.9 A 50 mΩ ULTRA LOW RESISTANCE METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 20 A SWITCHING SILICON MS-012AA R-PDSO-G8 e3 1 260 30 PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE Matte Tin (Sn) GULL WING DUAL IRF7303TRPBF 2065 compliant EAR99 5.4 SMALL OUTLINE, R-PDSO-G8
型号 Most Relevant Technical Compliance Operating Conditions Physical Other
数据手册 单价/库存
风险等级 是否无铅 是否Rohs认证
生命周期 极性/信道类型 表面贴装
配置 端子数量 最小漏源击穿电压 元件数量 最大漏极电流 (ID) 最大漏源导通电阻 其他特性 雪崩能效等级(Eas) 最大反馈电容 (Crss) FET 技术 工作模式 功耗环境最大值 最大功率耗散 (Abs) 最大脉冲漏极电流 (IDM) 晶体管应用
晶体管元件材料
最大关闭时间(toff)
最大开启时间(吨)
JEDEC-95代码 JESD-30 代码 JESD-609代码 认证状态 参考标准
湿度敏感等级 最高工作温度 最低工作温度 峰值回流温度(摄氏度) 处于峰值回流温度下的最长时间
外壳连接 封装主体材料 封装形状 封装形式 端子面层
端子形式
端子位置
Source Content uid
mfrid
是否符合REACH标准
ECCN代码
YTEOL
零件包装代码
针数
包装说明
制造商包装代码
Country Of Origin
HTS代码
IRFR2307ZTRLPBF
Infineon Technologies AG
查询价格和库存
Yes Active N-CHANNEL YES SINGLE WITH BUILT-IN DIODE 2 75 V 1 42 A 16 mΩ AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE 100 mJ METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 110 W 210 A SWITCHING SILICON TO-252AA R-PSSO-G2 e3 Not Qualified 1 175 °C 260 30 DRAIN PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE Matte Tin (Sn) - with Nickel (Ni) barrier GULL WING SINGLE IRFR2307ZTRLPBF 2065 not_compliant EAR99 5.85
IRFR9210TRPBF
Vishay Intertechnologies
查询价格和库存
Yes Yes Active P-CHANNEL YES SINGLE WITH BUILT-IN DIODE 2 200 V 1 1.9 A 3 Ω AVALANCHE RATED 300 mJ METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 25 W 7.6 A SWITCHING SILICON TO-252AA R-PSSO-G2 e3 Not Qualified 1 150 °C 260 30 DRAIN PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE MATTE TIN GULL WING SINGLE 2516 compliant EAR99 5.95 TO-252AA 3
FDWS86368-F085
onsemi
查询价格和库存
Yes Active N-CHANNEL YES SINGLE WITH BUILT-IN DIODE 5 80 V 1 80 A 4.5 mΩ 82 mJ 20 pF METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 214 W SWITCHING SILICON 59 ns 60 ns MO-240AA R-PDSO-F5 e3 AEC-Q101 1 175 °C -55 °C 260 30 DRAIN PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE Matte Tin (Sn) - annealed FLAT DUAL FDWS86368-F085 2260 not_compliant EAR99 5.9 DFN-8 507AU Philippines
IRFR3411TRPBF
Infineon Technologies AG
查询价格和库存
Yes Active N-CHANNEL YES SINGLE WITH BUILT-IN DIODE 2 100 V 1 32 A 44 mΩ AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE 185 mJ METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 130 W 110 A SWITCHING SILICON TO-252AA R-PSSO-G2 e3 Not Qualified 1 175 °C -55 °C 260 30 DRAIN PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE Matte Tin (Sn) - with Nickel (Ni) barrier GULL WING SINGLE IRFR3411TRPBF 2065 not_compliant EAR99 5.85
IRFBC40STRLPBF
Vishay Intertechnologies
查询价格和库存
Yes Yes Active N-CHANNEL YES SINGLE WITH BUILT-IN DIODE 2 600 V 1 6.2 A 1.2 Ω AVALANCHE RATED 570 mJ METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 130 W 25 A SWITCHING SILICON R-PSSO-G2 e3 Not Qualified 1 150 °C 260 30 DRAIN PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE Matte Tin (Sn) GULL WING SINGLE 2516 compliant EAR99 6.3 3 SMALL OUTLINE, R-PSSO-G2
IRFR220NTRPBF
Infineon Technologies AG
查询价格和库存
Yes Active N-CHANNEL YES SINGLE WITH BUILT-IN DIODE 2 200 V 1 5 A 600 mΩ 46 mJ METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 43 W 20 A SWITCHING SILICON TO-252AA R-PSSO-G2 e3 Not Qualified 1 175 °C 260 30 DRAIN PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE Matte Tin (Sn) - with Nickel (Ni) barrier GULL WING SINGLE IRFR220NTRPBF 2065 not_compliant EAR99 5.85
IRF2807STRLPBF
Infineon Technologies AG
查询价格和库存
Yes Active N-CHANNEL YES SINGLE WITH BUILT-IN DIODE 2 75 V 1 75 A 13 mΩ AVALANCHE RATED, HIGH RELIABILITY, ULTRA LOW RESISTANCE 340 mJ METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 230 W 280 A SWITCHING SILICON R-PSSO-G2 e3 Not Qualified 1 175 °C 260 30 DRAIN PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE Matte Tin (Sn) - with Nickel (Ni) barrier GULL WING SINGLE IRF2807STRLPBF 2065 not_compliant EAR99 5.85
FDD8896
onsemi
查询价格和库存
Yes Active N-CHANNEL YES SINGLE WITH BUILT-IN DIODE 2 30 V 1 17 A 68 mΩ 168 mJ METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 80 W SWITCHING SILICON TO-252AA R-PSSO-G2 e3 Not Qualified 1 175 °C 260 30 DRAIN PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE Matte Tin (Sn) - annealed GULL WING SINGLE FDD8896 2260 not_compliant EAR99 5.32 DPAK-3 369AS Mainland China
IRLR3105TRPBF
Infineon Technologies AG
查询价格和库存
Yes Active N-CHANNEL YES SINGLE WITH BUILT-IN DIODE 2 55 V 1 25 A 37 mΩ AVALANCHE RATED, HIGH RELIABILITY, LOGIC LEVEL COMPATIBLE, ULTRA-LOW RESISTANCE 61 mJ METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 57 W 100 A SWITCHING SILICON TO-252AA R-PSSO-G2 e3 Not Qualified 1 175 °C 260 30 DRAIN PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE Matte Tin (Sn) - with Nickel (Ni) barrier GULL WING SINGLE IRLR3105TRPBF 2065 not_compliant EAR99 5.55 SMALL OUTLINE, R-PSSO-G2 Mainland China
IRFR120NTRPBF
Infineon Technologies AG
查询价格和库存
Yes Active N-CHANNEL YES SINGLE WITH BUILT-IN DIODE 2 100 V 1 9.4 A 210 mΩ AVALANCHE RATED 91 mJ METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 48 W 38 A SWITCHING SILICON TO-252AA R-PSSO-G2 e3 Not Qualified 1 175 °C -55 °C 260 30 DRAIN PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE Matte Tin (Sn) - with Nickel (Ni) barrier GULL WING SINGLE IRFR120NTRPBF 2065 not_compliant EAR99 5.6 Mainland China
IRF3415STRLPBF
Infineon Technologies AG
查询价格和库存
Yes Active N-CHANNEL YES SINGLE WITH BUILT-IN DIODE 2 150 V 1 43 A 42 mΩ AVALANCHE RATED, HIGH RELIABILITY 590 mJ METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 150 A SWITCHING SILICON R-PSSO-G2 e3 Not Qualified 1 260 30 DRAIN PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE Matte Tin (Sn) - with Nickel (Ni) barrier GULL WING SINGLE IRF3415STRLPBF 2065 not_compliant EAR99 6.12 Mainland China
IRL3705NSTRLPBF
Infineon Technologies AG
查询价格和库存
Yes Active N-CHANNEL YES SINGLE WITH BUILT-IN DIODE 2 55 V 1 89 A 12 mΩ AVALANCHE RATED, HIGH RELIABILITY 340 mJ METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 310 A SWITCHING SILICON R-PSSO-G2 e3 Not Qualified 1 260 30 DRAIN PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE Matte Tin (Sn) - with Nickel (Ni) barrier GULL WING SINGLE IRL3705NSTRLPBF 2065 not_compliant EAR99 5.55
IRLML6402TRPBF
Infineon Technologies AG
查询价格和库存
Yes Active P-CHANNEL YES SINGLE WITH BUILT-IN DIODE 3 20 V 1 3.7 A 65 mΩ ULTRA LOW RESISTANCE 11 mJ 110 pF METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 1.3 W 1.3 W 22 A SWITCHING SILICON TO-236AB R-PDSO-G3 e3 Not Qualified 1 150 °C -55 °C 260 30 PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE Matte Tin (Sn) GULL WING DUAL IRLML6402TRPBF 2065 compliant EAR99 5.32 SOT-23, 3 PIN Mainland China 8541.29.00.95
IRF1010ESTRLPBF
Infineon Technologies AG
查询价格和库存
Yes Not Recommended N-CHANNEL YES SINGLE WITH BUILT-IN DIODE 2 60 V 1 75 A 12 mΩ AVALANCHE RATED, HIGH RELIABILITY 320 mJ METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 200 W 330 A SWITCHING SILICON R-PSSO-G2 e3 Not Qualified 1 175 °C 260 30 DRAIN PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE Matte Tin (Sn) - with Nickel (Ni) barrier GULL WING SINGLE IRF1010ESTRLPBF 2065 not_compliant EAR99 3
IRFZ44NPBF
Infineon Technologies AG
查询价格和库存
Yes Active N-CHANNEL NO SINGLE WITH BUILT-IN DIODE 3 55 V 1 49 A 17.5 mΩ AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE 150 mJ METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 94 W 160 A SWITCHING SILICON TO-220AB R-PSFM-T3 e3 Not Qualified 175 °C NOT SPECIFIED NOT SPECIFIED DRAIN PLASTIC/EPOXY RECTANGULAR FLANGE MOUNT Matte Tin (Sn) - with Nickel (Ni) barrier THROUGH-HOLE SINGLE IRFZ44NPBF 2065 compliant EAR99 5.15
IRFR3806TRPBF
Infineon Technologies AG
查询价格和库存
Yes Active N-CHANNEL YES SINGLE WITH BUILT-IN DIODE 2 60 V 1 43 A 15.8 mΩ 73 mJ METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 71 W 170 A SWITCHING SILICON TO-252AA R-PSSO-G2 e3 Not Qualified 1 175 °C 260 30 PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE Matte Tin (Sn) - with Nickel (Ni) barrier GULL WING SINGLE IRFR3806TRPBF 2065 not_compliant EAR99 5.55 SMALL OUTLINE, R-PSSO-G2
FQD8P10TM-F085
onsemi
查询价格和库存
Yes Active P-CHANNEL YES SINGLE WITH BUILT-IN DIODE 2 100 V 1 6.6 A 530 mΩ 150 mJ METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 44 W 26.4 A SWITCHING SILICON R-PSSO-G2 e3 Not Qualified 1 150 °C 260 30 DRAIN PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE Matte Tin (Sn) - annealed GULL WING SINGLE FQD8P10TM-F085 2260 not_compliant EAR99 5.4 TO-252 3L (DPAK) ROHS COMPLIANT, DPAK-3 369AS Mainland China
IRLR120TRLPBF
Vishay Intertechnologies
查询价格和库存
Yes Active N-CHANNEL YES SINGLE WITH BUILT-IN DIODE 2 100 V 1 7.7 A 270 mΩ AVALANCHE RATED 210 mJ METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 42 W 31 A SWITCHING SILICON TO-252 R-PSSO-G2 Not Qualified 150 °C 260 40 DRAIN PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE GULL WING SINGLE 2516 compliant EAR99 5.6
NVMFS4C05NWFT1G
onsemi
查询价格和库存
Yes Active N-CHANNEL YES SINGLE 1 116 A METAL-OXIDE SEMICONDUCTOR 79 W e3 1 175 °C 260 30 Matte Tin (Sn) - annealed NVMFS4C05NWFT1G 2260 not_compliant EAR99 DFN5 5X6, 1.27P (SO 8FL) 507BE
IRF7303TRPBF
Infineon Technologies AG
查询价格和库存
Yes Active N-CHANNEL YES SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE 8 30 V 2 4.9 A 50 mΩ ULTRA LOW RESISTANCE METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 20 A SWITCHING SILICON MS-012AA R-PDSO-G8 e3 1 260 30 PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE Matte Tin (Sn) GULL WING DUAL IRF7303TRPBF 2065 compliant EAR99 5.4 SMALL OUTLINE, R-PDSO-G8
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