型号 | Most Relevant | Technical | Compliance | Operating Conditions | Physical | Other | |||||||||||||||||||||||||||||||||||||||||||||||||
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数据手册 |
单价/库存
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风险等级 | 是否无铅 |
是否Rohs认证
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生命周期 | 极性/信道类型 |
表面贴装
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配置 | 端子数量 | 最小漏源击穿电压 | 元件数量 | 最大漏极电流 (ID) | 最大漏源导通电阻 | 其他特性 | 雪崩能效等级(Eas) | 最大反馈电容 (Crss) | FET 技术 | 工作模式 | 功耗环境最大值 | 最大功率耗散 (Abs) | 最大脉冲漏极电流 (IDM) |
晶体管应用
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晶体管元件材料
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最大关闭时间(toff)
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最大开启时间(吨)
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JEDEC-95代码 | JESD-30 代码 | JESD-609代码 | 认证状态 |
参考标准
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湿度敏感等级 | 最高工作温度 | 最低工作温度 | 峰值回流温度(摄氏度) |
处于峰值回流温度下的最长时间
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外壳连接 | 封装主体材料 | 封装形状 | 封装形式 |
端子面层
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端子形式
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端子位置
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Source Content uid
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mfrid
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是否符合REACH标准
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ECCN代码
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YTEOL
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零件包装代码
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针数
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包装说明
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制造商包装代码
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Country Of Origin
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HTS代码
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IRFR2307ZTRLPBF
Infineon Technologies AG
|
查询价格和库存 |
|
Yes | Active | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 2 | 75 V | 1 | 42 A | 16 mΩ | AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE | 100 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 110 W | 210 A | SWITCHING | SILICON | TO-252AA | R-PSSO-G2 | e3 | Not Qualified | 1 | 175 °C | 260 | 30 | DRAIN | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | Matte Tin (Sn) - with Nickel (Ni) barrier | GULL WING | SINGLE | IRFR2307ZTRLPBF | 2065 | not_compliant | EAR99 | 5.85 | |||||||||||||||
IRFR9210TRPBF
Vishay Intertechnologies
|
查询价格和库存 |
|
Yes | Yes | Active | P-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 2 | 200 V | 1 | 1.9 A | 3 Ω | AVALANCHE RATED | 300 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 25 W | 7.6 A | SWITCHING | SILICON | TO-252AA | R-PSSO-G2 | e3 | Not Qualified | 1 | 150 °C | 260 | 30 | DRAIN | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | MATTE TIN | GULL WING | SINGLE | 2516 | compliant | EAR99 | 5.95 | TO-252AA | 3 | |||||||||||||
FDWS86368-F085
onsemi
|
查询价格和库存 |
|
Yes | Active | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 5 | 80 V | 1 | 80 A | 4.5 mΩ | 82 mJ | 20 pF | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 214 W | SWITCHING | SILICON | 59 ns | 60 ns | MO-240AA | R-PDSO-F5 | e3 | AEC-Q101 | 1 | 175 °C | -55 °C | 260 | 30 | DRAIN | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | Matte Tin (Sn) - annealed | FLAT | DUAL | FDWS86368-F085 | 2260 | not_compliant | EAR99 | 5.9 | DFN-8 | 507AU | Philippines | ||||||||||
IRFR3411TRPBF
Infineon Technologies AG
|
查询价格和库存 |
|
Yes | Active | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 2 | 100 V | 1 | 32 A | 44 mΩ | AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE | 185 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 130 W | 110 A | SWITCHING | SILICON | TO-252AA | R-PSSO-G2 | e3 | Not Qualified | 1 | 175 °C | -55 °C | 260 | 30 | DRAIN | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | Matte Tin (Sn) - with Nickel (Ni) barrier | GULL WING | SINGLE | IRFR3411TRPBF | 2065 | not_compliant | EAR99 | 5.85 | ||||||||||||||
IRFBC40STRLPBF
Vishay Intertechnologies
|
查询价格和库存 |
|
Yes | Yes | Active | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 2 | 600 V | 1 | 6.2 A | 1.2 Ω | AVALANCHE RATED | 570 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 130 W | 25 A | SWITCHING | SILICON | R-PSSO-G2 | e3 | Not Qualified | 1 | 150 °C | 260 | 30 | DRAIN | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | Matte Tin (Sn) | GULL WING | SINGLE | 2516 | compliant | EAR99 | 6.3 | 3 | SMALL OUTLINE, R-PSSO-G2 | ||||||||||||||
IRFR220NTRPBF
Infineon Technologies AG
|
查询价格和库存 |
|
Yes | Active | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 2 | 200 V | 1 | 5 A | 600 mΩ | 46 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 43 W | 20 A | SWITCHING | SILICON | TO-252AA | R-PSSO-G2 | e3 | Not Qualified | 1 | 175 °C | 260 | 30 | DRAIN | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | Matte Tin (Sn) - with Nickel (Ni) barrier | GULL WING | SINGLE | IRFR220NTRPBF | 2065 | not_compliant | EAR99 | 5.85 | ||||||||||||||||
IRF2807STRLPBF
Infineon Technologies AG
|
查询价格和库存 |
|
Yes | Active | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 2 | 75 V | 1 | 75 A | 13 mΩ | AVALANCHE RATED, HIGH RELIABILITY, ULTRA LOW RESISTANCE | 340 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 230 W | 280 A | SWITCHING | SILICON | R-PSSO-G2 | e3 | Not Qualified | 1 | 175 °C | 260 | 30 | DRAIN | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | Matte Tin (Sn) - with Nickel (Ni) barrier | GULL WING | SINGLE | IRF2807STRLPBF | 2065 | not_compliant | EAR99 | 5.85 | ||||||||||||||||
FDD8896
onsemi
|
查询价格和库存 |
|
Yes | Active | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 2 | 30 V | 1 | 17 A | 68 mΩ | 168 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 80 W | SWITCHING | SILICON | TO-252AA | R-PSSO-G2 | e3 | Not Qualified | 1 | 175 °C | 260 | 30 | DRAIN | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | Matte Tin (Sn) - annealed | GULL WING | SINGLE | FDD8896 | 2260 | not_compliant | EAR99 | 5.32 | DPAK-3 | 369AS | Mainland China | ||||||||||||||
IRLR3105TRPBF
Infineon Technologies AG
|
查询价格和库存 |
|
Yes | Active | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 2 | 55 V | 1 | 25 A | 37 mΩ | AVALANCHE RATED, HIGH RELIABILITY, LOGIC LEVEL COMPATIBLE, ULTRA-LOW RESISTANCE | 61 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 57 W | 100 A | SWITCHING | SILICON | TO-252AA | R-PSSO-G2 | e3 | Not Qualified | 1 | 175 °C | 260 | 30 | DRAIN | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | Matte Tin (Sn) - with Nickel (Ni) barrier | GULL WING | SINGLE | IRLR3105TRPBF | 2065 | not_compliant | EAR99 | 5.55 | SMALL OUTLINE, R-PSSO-G2 | Mainland China | |||||||||||||
IRFR120NTRPBF
Infineon Technologies AG
|
查询价格和库存 |
|
Yes | Active | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 2 | 100 V | 1 | 9.4 A | 210 mΩ | AVALANCHE RATED | 91 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 48 W | 38 A | SWITCHING | SILICON | TO-252AA | R-PSSO-G2 | e3 | Not Qualified | 1 | 175 °C | -55 °C | 260 | 30 | DRAIN | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | Matte Tin (Sn) - with Nickel (Ni) barrier | GULL WING | SINGLE | IRFR120NTRPBF | 2065 | not_compliant | EAR99 | 5.6 | Mainland China | |||||||||||||
IRF3415STRLPBF
Infineon Technologies AG
|
查询价格和库存 |
|
Yes | Active | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 2 | 150 V | 1 | 43 A | 42 mΩ | AVALANCHE RATED, HIGH RELIABILITY | 590 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 150 A | SWITCHING | SILICON | R-PSSO-G2 | e3 | Not Qualified | 1 | 260 | 30 | DRAIN | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | Matte Tin (Sn) - with Nickel (Ni) barrier | GULL WING | SINGLE | IRF3415STRLPBF | 2065 | not_compliant | EAR99 | 6.12 | Mainland China | |||||||||||||||||
IRL3705NSTRLPBF
Infineon Technologies AG
|
查询价格和库存 |
|
Yes | Active | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 2 | 55 V | 1 | 89 A | 12 mΩ | AVALANCHE RATED, HIGH RELIABILITY | 340 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 310 A | SWITCHING | SILICON | R-PSSO-G2 | e3 | Not Qualified | 1 | 260 | 30 | DRAIN | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | Matte Tin (Sn) - with Nickel (Ni) barrier | GULL WING | SINGLE | IRL3705NSTRLPBF | 2065 | not_compliant | EAR99 | 5.55 | ||||||||||||||||||
IRLML6402TRPBF
Infineon Technologies AG
|
查询价格和库存 |
|
Yes | Active | P-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 3 | 20 V | 1 | 3.7 A | 65 mΩ | ULTRA LOW RESISTANCE | 11 mJ | 110 pF | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 1.3 W | 1.3 W | 22 A | SWITCHING | SILICON | TO-236AB | R-PDSO-G3 | e3 | Not Qualified | 1 | 150 °C | -55 °C | 260 | 30 | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | Matte Tin (Sn) | GULL WING | DUAL | IRLML6402TRPBF | 2065 | compliant | EAR99 | 5.32 | SOT-23, 3 PIN | Mainland China | 8541.29.00.95 | ||||||||||
IRF1010ESTRLPBF
Infineon Technologies AG
|
查询价格和库存 |
|
Yes | Not Recommended | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 2 | 60 V | 1 | 75 A | 12 mΩ | AVALANCHE RATED, HIGH RELIABILITY | 320 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 200 W | 330 A | SWITCHING | SILICON | R-PSSO-G2 | e3 | Not Qualified | 1 | 175 °C | 260 | 30 | DRAIN | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | Matte Tin (Sn) - with Nickel (Ni) barrier | GULL WING | SINGLE | IRF1010ESTRLPBF | 2065 | not_compliant | EAR99 | 3 | ||||||||||||||||
IRFZ44NPBF
Infineon Technologies AG
|
查询价格和库存 |
|
Yes | Active | N-CHANNEL | NO | SINGLE WITH BUILT-IN DIODE | 3 | 55 V | 1 | 49 A | 17.5 mΩ | AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE | 150 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 94 W | 160 A | SWITCHING | SILICON | TO-220AB | R-PSFM-T3 | e3 | Not Qualified | 175 °C | NOT SPECIFIED | NOT SPECIFIED | DRAIN | PLASTIC/EPOXY | RECTANGULAR | FLANGE MOUNT | Matte Tin (Sn) - with Nickel (Ni) barrier | THROUGH-HOLE | SINGLE | IRFZ44NPBF | 2065 | compliant | EAR99 | 5.15 | ||||||||||||||||
IRFR3806TRPBF
Infineon Technologies AG
|
查询价格和库存 |
|
Yes | Active | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 2 | 60 V | 1 | 43 A | 15.8 mΩ | 73 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 71 W | 170 A | SWITCHING | SILICON | TO-252AA | R-PSSO-G2 | e3 | Not Qualified | 1 | 175 °C | 260 | 30 | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | Matte Tin (Sn) - with Nickel (Ni) barrier | GULL WING | SINGLE | IRFR3806TRPBF | 2065 | not_compliant | EAR99 | 5.55 | SMALL OUTLINE, R-PSSO-G2 | ||||||||||||||||
FQD8P10TM-F085
onsemi
|
查询价格和库存 |
|
Yes | Active | P-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 2 | 100 V | 1 | 6.6 A | 530 mΩ | 150 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 44 W | 26.4 A | SWITCHING | SILICON | R-PSSO-G2 | e3 | Not Qualified | 1 | 150 °C | 260 | 30 | DRAIN | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | Matte Tin (Sn) - annealed | GULL WING | SINGLE | FQD8P10TM-F085 | 2260 | not_compliant | EAR99 | 5.4 | TO-252 3L (DPAK) | ROHS COMPLIANT, DPAK-3 | 369AS | Mainland China | |||||||||||||
IRLR120TRLPBF
Vishay Intertechnologies
|
查询价格和库存 |
|
Yes | Active | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 2 | 100 V | 1 | 7.7 A | 270 mΩ | AVALANCHE RATED | 210 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 42 W | 31 A | SWITCHING | SILICON | TO-252 | R-PSSO-G2 | Not Qualified | 150 °C | 260 | 40 | DRAIN | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | GULL WING | SINGLE | 2516 | compliant | EAR99 | 5.6 | |||||||||||||||||||
NVMFS4C05NWFT1G
onsemi
|
查询价格和库存 |
|
Yes | Active | N-CHANNEL | YES | SINGLE | 1 | 116 A | METAL-OXIDE SEMICONDUCTOR | 79 W | e3 | 1 | 175 °C | 260 | 30 | Matte Tin (Sn) - annealed | NVMFS4C05NWFT1G | 2260 | not_compliant | EAR99 | DFN5 5X6, 1.27P (SO 8FL) | 507BE | ||||||||||||||||||||||||||||||||
IRF7303TRPBF
Infineon Technologies AG
|
查询价格和库存 |
|
Yes | Active | N-CHANNEL | YES | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | 8 | 30 V | 2 | 4.9 A | 50 mΩ | ULTRA LOW RESISTANCE | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 20 A | SWITCHING | SILICON | MS-012AA | R-PDSO-G8 | e3 | 1 | 260 | 30 | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | Matte Tin (Sn) | GULL WING | DUAL | IRF7303TRPBF | 2065 | compliant | EAR99 | 5.4 | SMALL OUTLINE, R-PDSO-G8 |