型号 | Most Relevant | Technical | Compliance | Operating Conditions | Physical | Other | |||||||||||||||||||||||||||||||||||||||||||
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数据手册 |
单价/库存
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风险等级 | 是否无铅 |
是否Rohs认证
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生命周期 | 极性/信道类型 |
表面贴装
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配置 | 端子数量 | 最小漏源击穿电压 | 元件数量 | 最大漏极电流 (ID) | 最大漏源导通电阻 | 其他特性 | 雪崩能效等级(Eas) | FET 技术 | 工作模式 | 最大功率耗散 (Abs) | 最大脉冲漏极电流 (IDM) |
晶体管应用
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晶体管元件材料
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JEDEC-95代码 | JESD-30 代码 | JESD-609代码 | 认证状态 | 湿度敏感等级 | 最高工作温度 | 峰值回流温度(摄氏度) |
处于峰值回流温度下的最长时间
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外壳连接 | 封装主体材料 | 封装形状 | 封装形式 |
端子面层
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端子形式
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端子位置
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Source Content uid
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mfrid
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包装说明
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制造商包装代码
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是否符合REACH标准
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Country Of Origin
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ECCN代码
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YTEOL
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零件包装代码
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针数
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HTS代码
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FDS8949
onsemi
|
查询价格和库存 |
|
Yes | Active | N-CHANNEL | YES | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | 8 | 40 V | 2 | 6 A | 43 mΩ | 26 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 2 W | 20 A | SILICON | R-PDSO-G8 | e3 | Not Qualified | 1 | 150 °C | 260 | 30 | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | Matte Tin (Sn) - annealed | GULL WING | DUAL | FDS8949 | 2260 | SO-8 | 751EB | compliant | Mainland China | EAR99 | 5.55 | ||||||||||
IRLL024NTRPBF
Infineon Technologies AG
|
查询价格和库存 |
|
Yes | Active | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 4 | 55 V | 1 | 3.1 A | 65 mΩ | AVALANCHE RATED, ULTRA-LOW RESISTANCE | 120 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 12 A | SWITCHING | SILICON | TO-261AA | R-PDSO-G4 | e3 | 1 | 260 | 30 | DRAIN | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | Matte Tin (Sn) | GULL WING | DUAL | IRLL024NTRPBF | 2065 | HALOGEN FREE AND ROHS COMPLIANT, PLASTIC PACKAGE-4 | not_compliant | Mainland China | EAR99 | 5.4 | ||||||||||
IRF7416TRPBF
Infineon Technologies AG
|
查询价格和库存 |
|
Yes | Active | P-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 8 | 30 V | 1 | 10 A | 20 mΩ | ULTRA LOW RESISTANCE | 370 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 45 A | SWITCHING | SILICON | MS-012AA | R-PDSO-G8 | e3 | 1 | 260 | 30 | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | Matte Tin (Sn) | GULL WING | DUAL | IRF7416TRPBF | 2065 | SOP-8 | compliant | EAR99 | 5.4 | ||||||||||||
IRF2907ZSTRLPBF
Infineon Technologies AG
|
查询价格和库存 |
|
Yes | Active | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 2 | 75 V | 1 | 160 A | 4.5 mΩ | AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE | 690 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 300 W | 680 A | SWITCHING | SILICON | TO-263AB | R-PSSO-G2 | e3 | Not Qualified | 1 | 175 °C | 260 | 30 | DRAIN | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | Matte Tin (Sn) - with Nickel (Ni) barrier | GULL WING | SINGLE | IRF2907ZSTRLPBF | 2065 | SMALL OUTLINE, R-PSSO-G2 | not_compliant | EAR99 | 5.9 | ||||||||
ZVN4306GVTA
Diodes Incorporated
|
查询价格和库存 |
|
No | Yes | Active | N-CHANNEL | YES | SINGLE | 4 | 60 V | 1 | 2.1 A | 330 mΩ | AVALANCHE RATED | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 15 A | SWITCHING | SILICON | R-PDSO-G4 | e3 | Not Qualified | 1 | 150 °C | 260 | 30 | DRAIN | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | MATTE TIN | GULL WING | DUAL | 1926 | not_compliant | EAR99 | 5.4 | ||||||||||||
FQD3P50TM
onsemi
|
查询价格和库存 |
|
Yes | Active | P-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 2 | 500 V | 1 | 2.1 A | 4.9 Ω | 250 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 50 W | 8.4 A | SWITCHING | SILICON | TO-252 | R-PSSO-G2 | e3 | Not Qualified | 1 | 150 °C | 260 | 30 | DRAIN | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | MATTE TIN | GULL WING | SINGLE | FQD3P50TM | 2260 | DPAK-3 | 369AS | not_compliant | Mainland China | EAR99 | 6.3 | |||||||
IRF530NSTRLPBF
Infineon Technologies AG
|
查询价格和库存 |
|
Yes | Active | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 2 | 100 V | 1 | 17 A | 90 mΩ | AVALANCHE RATED, HIGH RELIABILITY | 93 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 60 A | SWITCHING | SILICON | R-PSSO-G2 | e3 | Not Qualified | 1 | 260 | 30 | DRAIN | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | Matte Tin (Sn) - with Nickel (Ni) barrier | GULL WING | SINGLE | IRF530NSTRLPBF | 2065 | not_compliant | EAR99 | 5.75 | ||||||||||||
BUK9222-55A,118
Nexperia
|
查询价格和库存 |
|
Active | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 2 | 55 V | 1 | 48 A | 24 mΩ | 160 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 193 A | SWITCHING | SILICON | TO-252 | R-PSSO-G2 | e3 | Not Qualified | 1 | 175 °C | 260 | 30 | DRAIN | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | TIN | GULL WING | SINGLE | BUK9222-55A,118 | 229119436 | SMALL OUTLINE, R-PSSO-G2 | SOT428 | not_compliant | EAR99 | DPAK | 3 | |||||||||
IRFR1N60APBF
Vishay Intertechnologies
|
查询价格和库存 |
|
Yes | Yes | Active | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 2 | 600 V | 1 | 1.4 A | 7 Ω | 93 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 36 W | 5.6 A | SWITCHING | SILICON | TO-252AA | R-PSSO-G2 | e3 | Not Qualified | 1 | 150 °C | 260 | 10 | DRAIN | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | MATTE TIN | GULL WING | SINGLE | 2516 | SMALL OUTLINE, R-PSSO-G2 | not_compliant | EAR99 | 6.3 | TO-252AA | 3 | |||||||
SUM110P06-07L-E3
Vishay Intertechnologies
|
查询价格和库存 |
|
Yes | Active | P-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 2 | 60 V | 1 | 110 A | 6.9 mΩ | 281 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 375 W | 240 A | SWITCHING | SILICON | TO-263AB | R-PSSO-G2 | e3 | Not Qualified | 1 | 175 °C | 260 | 30 | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | Matte Tin (Sn) - annealed | GULL WING | SINGLE | 2516 | ROHS COMPLIANT, TO-263, 3 PIN | compliant | Mainland China | EAR99 | 5.6 | 8541.29.00.95 | |||||||||
IRFR9014TRPBF
Vishay Siliconix
|
查询价格和库存 |
|
Yes | Yes | Active | P-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 2 | 60 V | 1 | 5.1 A | 500 mΩ | AVALANCHE RATED | 140 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 25 W | 20 A | SWITCHING | SILICON | TO-252 | R-PSSO-G2 | e3 | Not Qualified | 1 | 150 °C | 260 | 30 | DRAIN | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | Matte Tin (Sn) | GULL WING | SINGLE | 2526 | SMALL OUTLINE, R-PSSO-G2 | unknown | EAR99 | 5.4 | TO-252 | 3 | ||||||
IRFR3710ZTRPBF
Infineon Technologies AG
|
查询价格和库存 |
|
Yes | Active | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 2 | 100 V | 1 | 42 A | 18 mΩ | AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE | 150 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 140 W | 220 A | SWITCHING | SILICON | TO-252AA | R-PSSO-G2 | e3 | Not Qualified | 1 | 175 °C | 260 | 30 | DRAIN | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | Matte Tin (Sn) - with Nickel (Ni) barrier | GULL WING | SINGLE | IRFR3710ZTRPBF | 2065 | LEAD FREE, PLASTIC, DPAK-3 | not_compliant | Mainland China | EAR99 | 5.85 | |||||||
IRL2910STRLPBF
Infineon Technologies AG
|
查询价格和库存 |
|
Yes | Active | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 2 | 100 V | 1 | 55 A | 30 mΩ | LOGIC LEVEL COMPATIBLE, HIGH RELIABILITY, AVALANCHE RATED | 520 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 190 A | SWITCHING | SILICON | R-PSSO-G2 | e3 | Not Qualified | 1 | 260 | 30 | DRAIN | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | Matte Tin (Sn) - with Nickel (Ni) barrier | GULL WING | SINGLE | IRL2910STRLPBF | 2065 | SMALL OUTLINE, R-PSSO-G2 | not_compliant | EAR99 | 5.85 | |||||||||||
IRLR3110ZTRPBF
Infineon Technologies AG
|
查询价格和库存 |
|
Yes | Active | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 2 | 100 V | 1 | 42 A | 14 mΩ | AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE | 110 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 140 W | 250 A | SWITCHING | SILICON | TO-252AA | R-PSSO-G2 | e3 | 1 | 175 °C | 260 | 30 | DRAIN | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | Matte Tin (Sn) - with Nickel (Ni) barrier | GULL WING | SINGLE | IRLR3110ZTRPBF | 2065 | not_compliant | EAR99 | 5.85 | ||||||||||
FQB34P10TM
onsemi
|
查询价格和库存 |
|
Yes | Active | P-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 2 | 100 V | 1 | 33.5 A | 60 mΩ | 2200 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 155 W | 134 A | SWITCHING | SILICON | R-PSSO-G2 | e3 | Not Qualified | 1 | 175 °C | 245 | 30 | DRAIN | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | Matte Tin (Sn) - annealed | GULL WING | SINGLE | FQB34P10TM | 2260 | D2PAK-3 | 418AJ | not_compliant | Mainland China | EAR99 | 5.75 | ||||||||
IRF7103TRPBF
Infineon Technologies AG
|
查询价格和库存 |
|
Yes | Active | N-CHANNEL | YES | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | 8 | 50 V | 2 | 3 A | 130 mΩ | LOGIC LEVEL COMPATIBLE | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 2 W | SWITCHING | SILICON | R-PDSO-G8 | e3 | Not Qualified | 1 | 150 °C | 260 | 30 | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | Matte Tin (Sn) | GULL WING | DUAL | IRF7103TRPBF | 2065 | compliant | EAR99 | 5.4 | |||||||||||||
IRF1407STRLPBF
Infineon Technologies AG
|
查询价格和库存 |
|
Yes | Active | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 2 | 75 V | 1 | 75 A | 7.8 mΩ | HIGH RELIABILITY, ULTRA LOW RESISTANCE | 390 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 3.8 W | 520 A | SWITCHING | SILICON | R-PSSO-G2 | e3 | Not Qualified | 1 | 175 °C | 260 | 30 | DRAIN | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | Matte Tin (Sn) - with Nickel (Ni) barrier | GULL WING | SINGLE | IRF1407STRLPBF | 2065 | LEAD FREE, PLASTIC, D2PAK-3 | not_compliant | EAR99 | 5.9 | |||||||||
IRFR320TRLPBF
Vishay Intertechnologies
|
查询价格和库存 |
|
Yes | Yes | Active | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 2 | 400 V | 1 | 3.1 A | 1.8 Ω | AVALANCHE RATED | 160 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 42 W | 12 A | SWITCHING | SILICON | TO-252AA | R-PSSO-G2 | e3 | Not Qualified | 1 | 150 °C | 260 | 30 | DRAIN | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | Matte Tin (Sn) | GULL WING | SINGLE | 2516 | SMALL OUTLINE, R-PSSO-G2 | compliant | EAR99 | 6.3 | TO-252AA | 3 | ||||||
IRFZ34NSTRLPBF
Infineon Technologies AG
|
查询价格和库存 |
|
Yes | Active | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 2 | 55 V | 1 | 29 A | 40 mΩ | AVALANCHE RATED, HIGH RELIABILITY | 130 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 68 W | 100 A | SWITCHING | SILICON | TO-263AB | R-PSSO-G2 | e3 | Not Qualified | 1 | 175 °C | 260 | 30 | DRAIN | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | Matte Tin (Sn) - with Nickel (Ni) barrier | GULL WING | SINGLE | IRFZ34NSTRLPBF | 2065 | SMALL OUTLINE, R-PSSO-G2 | not_compliant | EAR99 | 5.55 | ||||||||
RFD14N05SM9A
onsemi
|
查询价格和库存 |
|
Yes | Active | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 2 | 50 V | 1 | 14 A | 100 mΩ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 48 W | SWITCHING | SILICON | TO-252AA | R-PSSO-G2 | e3 | Not Qualified | 1 | 175 °C | 260 | 30 | DRAIN | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | MATTE TIN | GULL WING | SINGLE | RFD14N05SM9A | 2260 | TO-252AA, 3 PIN | 369AS | not_compliant | Mainland China | EAR99 | 5.4 |